Academic literature on the topic 'Scalable circuit model'

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Journal articles on the topic "Scalable circuit model"

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Yuan, J. S., Y. Dai, and C. S. Yeh. "A Scalable Bipolar Transistor Model for Circuit Simulation." physica status solidi (a) 168, no. 1 (1998): 209–22. http://dx.doi.org/10.1002/(sici)1521-396x(199807)168:1<209::aid-pssa209>3.0.co;2-p.

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Leibinger, Á., and Á. Hajdu. "Proposal for scalable models in EMC simulation." Advances in Radio Science 9 (August 1, 2011): 329–34. http://dx.doi.org/10.5194/ars-9-329-2011.

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Abstract. In this paper a method "Component Series Modeling" (CoSeMod) is presented. This allows fast and easy implementation of scalable model generations for passive component series based on measurement data or specification provided by manufacturer. These can be used in circuit models for fast EMC analysis and optimization, especially in frequency ranges where conducted emission and susceptibility dominate. EMC tasks require high precision equivalent circuit models of components. Models generated with CoSeMod provide in many cases as high a quality as original (static) models do. One featu
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Van Nechel, Evi, Francesco Ferranti, Yves Rolain, and John Lataire. "Model-Driven Design of Microwave Filters Based on Scalable Circuit Models." IEEE Transactions on Microwave Theory and Techniques 66, no. 10 (2018): 4390–96. http://dx.doi.org/10.1109/tmtt.2018.2842197.

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Di Sarro, James P., and Elyse Rosenbaum. "A Scalable SCR Compact Model for ESD Circuit Simulation." IEEE Transactions on Electron Devices 57, no. 12 (2010): 3275–86. http://dx.doi.org/10.1109/ted.2010.2081674.

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Wei Gao and Zhiping Yu. "Scalable compact circuit model and synthesis for RF CMOS spiral inductors." IEEE Transactions on Microwave Theory and Techniques 54, no. 3 (2006): 1055–64. http://dx.doi.org/10.1109/tmtt.2005.864134.

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Gao, W., C. Jiao, T. Liu, and Z. Yu. "Scalable Compact Circuit Model for Differential Spiral Transformers in CMOS RFICs." IEEE Transactions on Electron Devices 53, no. 9 (2006): 2187–94. http://dx.doi.org/10.1109/ted.2006.880230.

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Wang, Hansheng, Weiliang He, Minghui Zhang, and Lu Tanh. "Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines." Journal of Semiconductors 38, no. 6 (2017): 065004. http://dx.doi.org/10.1088/1674-4926/38/6/065004.

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Upadhyay, Abhishek Kumar, Ajay Kumar Kushwaha, and Santosh Kumar Vishvakarma. "A Unified Scalable Quasi-Ballistic Transport Model of GFET for Circuit Simulations." IEEE Transactions on Electron Devices 65, no. 2 (2018): 739–46. http://dx.doi.org/10.1109/ted.2017.2782658.

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Waqas, Maria, Muhammad Khurram, and S. M. Razaul Hasan. "Analog Electronic Circuits to Model Cooperativity in Hill Process." Mehran University Research Journal of Engineering and Technology 39, no. 4 (2020): 678–85. http://dx.doi.org/10.22581/muet1982.2004.01.

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In the field of computational biology, electronic modeling of bio-cellular processes is in vogue for about a couple of decades. Fast, efficient and scalable electronic mimetics of recurrently found bio-chemical reactions are expected to provide better electronic circuit simulators that can also be used as bio-sensors or implantable biodevices at cellular levels. This paper presents some possible electronic circuit equivalents to model dynamics of one such bio-chemical reaction commonly involved in many bio-cellular processes, specifically pathways in living cells, known as the Hill process. Th
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LIU, WEIDONG, and CHENMING HU. "BSIM3V3 MOSFET MODEL." International Journal of High Speed Electronics and Systems 09, no. 03 (1998): 671–701. http://dx.doi.org/10.1142/s0129156498000294.

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The BSIM3v3 compact MOSFET model is reviewed. It is a physics-based model that is accurate, smooth, continuous, scalable, predictive and computationally robust over different regions of operation and a wide geometry range. BSIM3v3 considers all major physical effects in deep submicron MOSFETs, making it a good base for future sub-0.1m device models and for statistical circuit designs. A key feature of the model lies in its thorough, accurate and functional mathematical representation of MOS device physics, which has made BSIM3v3 selected by an international consortium of semiconductor companie
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Dissertations / Theses on the topic "Scalable circuit model"

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Kim, Jae Hong. "Wide-Band and Scalable Equivalent Circuit Model for Multiple Quantum Well Laser Diodes." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7129.

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This dissertation presents a wide-band lumped element equivalent circuit model and a building block-based scalable circuit model for multiple quantum well laser diodes. The wide-band multiple-resonance model expresses two important laser diode characteristics such as input reflection and electrical-to-optical transmission together. Additionally, it demonstrates good agreements with the measurement results of the selected commercial discrete laser diodes. The proposed building block-based modeling approach proves its validity using a numerically derived scalable rate equation. Since success
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Cha, Cheolung. "Broad-band and scalable circuit-level model of MSM PD for co-design with preamplifier in front-end receiver applications." Diss., Available online, Georgia Institute of Technology, 2004:, 2004. http://etd.gatech.edu/theses/available/etd-04122004-115331/unrestricted/cha%5Fcheolung%5F200405%5Fphd.pdf.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004.<br>Rhodes, William, Committee Member ; Brooke, Martin, Committee Chair ; Chang, G.K., Committee Member ; Hasler, Paul, Committee Member ; Kohl, Paul, Committee Member. Includes bibliographical references (leaves 133-139).
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Srirattana, Nuttapong. "High-Efficiency Linear RF Power Amplifiers Development." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/6899.

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Next generation mobile communication systems require the use of linear RF power amplifier for higher data transmission rates. However, linear RF power amplifiers are inherently inefficient and usually require additional circuits or further system adjustments for better efficiency. This dissertation focuses on the development of new efficiency enhancement schemes for linear RF power amplifiers. The multistage Doherty amplifier technique is proposed to improve the performance of linear RF power amplifiers operated in a low power level. This technique advances the original Doherty amplifier sche
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Kurniawan, Budiyoso. "ASIC design and implementation of a parallel exponentiation algorithm using optimized scalable Montgomery multipliers." Thesis, 2002. http://hdl.handle.net/1957/32189.

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Modular exponentiation and modular multiplication are the most used operations in current cryptographic systems. Some well-known cryptographic algorithms, such as RSA, Diffie-Hellman key exchange, and DSA, require modular exponentiation operations. This is performed with a series of modular multiplications to the extent of its exponent in a certain fashion depending on the exponentiation algorithm used. Cryptographic functions are very likely to be applied in current applications that perform information exchange to secure, verify, or authenticate data. Most notable is the use of such applicat
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Conference papers on the topic "Scalable circuit model"

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Di Sarro, James, and Elyse Rosenbaum. "A scalable SCR compact model for ESD circuit simulation." In 2008 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2008. http://dx.doi.org/10.1109/relphy.2008.4558895.

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Lim, G. H., X. Zhou, K. Khu, et al. "Physics based scalable MOSFET mismatch model for statistical circuit simulation." In 2007 IEEE Conference on Electron Devices and Solid-State Circuits. IEEE, 2007. http://dx.doi.org/10.1109/edssc.2007.4450311.

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Tudor, Bogdan, Joddy Wang, Zhaoping Chen, Robin Tan, Weidong Liu, and Frank Lee. "An accurate and scalable MOSFET aging model for circuit simulation." In 2011 International Symposium on Quality Electronic Design (ISQED). IEEE, 2011. http://dx.doi.org/10.1109/isqed.2011.5770765.

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ZHANG, Ming-hui, Wei-liang HE, Han-sheng WANG, and Lu TANG. "A Scalable Equivalent Circuit Model for Gan On-Chip Transmission Lines." In International Conference on Computer Networks and Communication Technology (CNCT 2016). Atlantis Press, 2017. http://dx.doi.org/10.2991/cnct-16.2017.60.

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Dimitropoulos, P. D., S. Reymond, P. M. Drljaca, R. S. Popovic, and N. Nastos. "A Completely Scalable Lumped-Circuit Model for Horizontal and Vertical HALL Devices." In 2007 IEEE Sensors. IEEE, 2007. http://dx.doi.org/10.1109/icsens.2007.4388404.

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Shiramizu, Nobuhiro, Toru Masuda, Takahiro Nakamura, and Katsuyoshi Washio. "Scalable transformer model based on ladder topological equivalent circuit for Si RFICs." In 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). IEEE, 2010. http://dx.doi.org/10.1109/smic.2010.5422954.

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Asahara, Masa, Charles Campbell, and William Frensley. "A Generic, Scalable Model Applicable to MIM Capacitors of Arbitrary Electrical Length." In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319916.

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Zhu, Yu, Cejun Wei, Oleksiy Klimashov, Binghui Li, Cindy Zhang, and Yevgeniy Tkachenko. "Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs." In 2008 European Microwave Integrated Circuit Conference (EuMIC). IEEE, 2008. http://dx.doi.org/10.1109/emicc.2008.4772288.

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Lu, Kuan-Chung, and Tzyy-Sheng Horng. "Wideband and scalable equivalent-circuit model for differential through silicon vias with measurement verification." In 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC). IEEE, 2013. http://dx.doi.org/10.1109/ectc.2013.6575725.

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Zheng, Lei, Steven G. Gaskill, and Andreas Weisshaar. "A scalable wideband equivalent circuit model for on-chip microstrips up to 110 GHz." In 2014 IEEE 23rd Electrical Performance of Electronic Packaging and Systems (EPEPS). IEEE, 2014. http://dx.doi.org/10.1109/epeps.2014.7103617.

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