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Journal articles on the topic 'Scanning capacitance Microscopy - SCM'

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Published: 4 June 2021

Last updated: 11 February 2022

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1

Erickson, A., D. Adderton, T. Day, and R. Alvis. "Imaging free Carriers in Electronic Material using a Scanning Probe Microscope: Scanning Capacitance Microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 956–57. http://dx.doi.org/10.1017/s042482010016724x.

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The development of methods to measure electrical properties, which are suitable to directly yield the desired carrier distributions on a nanometer scale has greatly benefited from the development of scanning probe technology over the last decade. Scanning Probe Microscopes (SPMs) offer inherent two-dimensionality and have been shown to have applications ranging from Magnet force to electro-chemistry. We have used an SPM in contact mode to simultaneously measure topography (and therefore physical structure) and capacitance variations (due to an applied bias) of various electronic materials such asdoped silicon, poly silicon, SiC, and III-V materials.The technique aptly named Scanning Capacitance Microscopy (SCM) takes advantage of the fact that electrical carrier response to an applied electric field is largely dependent upon the local carrier concentration. Using a high 'Q' GHz resonant circuit, SCM measures capacitance variations due to an applied bias between the metalized nano-probe tip and semiconductor sample during scanning. Since thesevariations are directly related to dopant (carrier) concentration, the SCM generates a two-dimensional image with contrast corresponding to near-surface variations in carrier density. Because the measurement is done with an extremely sharp probe, we have been able to resolve features as small as lOnm, corresponding to attofarad (le-18 farad) capacitance changes.

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2

Konkar, Atul A., Wei Chen, and Kari Noehring. "Effect of surface oxide characteristics on Scanning Capacitance Microscopy Imaging." Microscopy and Microanalysis 5, S2 (August 1999): 978–79. http://dx.doi.org/10.1017/s1431927600018213.

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Scanning capacitance microscopy (SCM) is currently one of the most promising tools for twodimensional carrier profiling. This technique, based upon atomic force microscope (AFM) operated in the contact mode, uses a conductive probe which is scanned over the semiconductor surface. The conductive probe, oxide on the surface of the semiconductor, and the semiconductor substrate form a metal-oxide-semiconductor (MOS) structure. An a.c. bias is applied to the tip and the capacitance of the MOS structure is monitored. The a.c. bias changes the depletion of carriers in the semiconductor and thus the total capacitance of the structure. The maximum capacitance of the MOS structure is obtained when the semiconductor is in accumulation and the total capacitance of the structure is the capacitance of the semiconductor surface oxide. The minimum capacitance is obtained when the semiconductor region under the tip is in inversion. Since SCM the output signal is proportional to the differential capacitance, to get a high signal we need to maximize the difference between the maximum and minimum in the total MOS capacitance.

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3

Lang, David V. "Scanning Capacitance Microscopy of Dopants in III-V Semiconductors." Microscopy and Microanalysis 4, S2 (July 1998): 640–41. http://dx.doi.org/10.1017/s1431927600023321.

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Scanning Capacitance Microscopy (SCM) was first developed in 1985 as a method for sensing tip-to-sample spacing for surface topography profiling in connection with the RCA VideoDisc. Williams and coworkers were the first to use an SCM for obtaining dC/dV doping profiles in semiconductors, albeit with a rather modest resolution of 200 nm. More recently, it has been developed as a 50-nmresolution tool for microscopic doping analysis of semiconductors by measuring the tip-to-sample rf capacitance in an AFM controlled by other means, e.g. by laser beam deflection of a cantilever tip. In this paper we report on the application of SCM to study the 2D doping profiles of InP-based devices, such as multi-quantum well lasers.It is particularly convenient to prepare cross sections of III-V devices, since the material readily cleaves on [110] planes, as compared to silicon where cross sections must be obtained by painstaking polishing.

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4

Szyszka, Adam, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski, and Regina Paszkiewicz. "Scanning capacitance microscopy characterization of AIIIBV epitaxial layers." Materials Science-Poland 34, no. 4 (December 1, 2016): 845–50. http://dx.doi.org/10.1515/msp-2016-0104.

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AbstractThe applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

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5

Kline, R. J., J. F. Richards, and P. E. Russell. "Scanning Kelvin Force and Capacitance Microscopy Applications." Microscopy and Microanalysis 4, S2 (July 1998): 330–31. http://dx.doi.org/10.1017/s1431927600021772.

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Scanning Probe Microscopy (SPM) is being developed as a possible solution to the problems inherent with analyzing the nanometer scale electronic properties of ULSI integrated circuits. Scanning Kelvin Probe Microscopy (SKPM) and Scanning Capacitance Microscopy (SCM) are both being developed to provide two dimensional dopant profiles of semiconductor devices. SKPM can also determine surface potentials, work functions, dielectric properties, and capacitance.SKPM is based on the concept of Kelvin probe oscillating capacitor work function measurements. The small capacitance area of the SKPM tip and the high resistance of the system produce difficulties in monitoring and minimizing the current in the system. SKPM solves this problem by utilizing the force monitoring capability of the SPM to minimize the Kelvin force instead of the current. An AC voltage applied to the cantilever produces a DC force and AC forces at the AC frequency and the first harmonic of the AC frequency.

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6

Konkar, Atul A., Wei Chen, and Kari Noehring. "Two-dimensional carrier profiling of advanced sub-micron silicon devices using Scanning Capacitance Microscopy." Microscopy and Microanalysis 5, S2 (August 1999): 960–61. http://dx.doi.org/10.1017/s1431927600018122.

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With the continuing push for reduction in the device dimensions into the deep sub-u,m dimensions, the critical need for physical and electrical characterization on this sub-μ,m scale is evident. The National Technology Roadmap has identified need for two-dimensional (2D) dopant/carrier profiling with a spatial resolution of 10 nm. Though current techniques used for dopant profiling such as secondary ion mass spectroscopy (SIMS) and spreading resistance profiling (SRP) have a high sensitivity, these offer good resolution only in the depth direction. The spatial resolution in the lateral direction in these techniques is limited to several tens or hundreds of microns. To acheieve the required lateral spatial resolution different scanning probe based techniques have been explored. One of the most promising of these class of techniques is scanning capacitance microscopy (SCM). In SCM a conductive atomic force microscope (AFM) probe tip is scanned across the surface and simultaneously an a.c. bias is applied between the tip and the sample.

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7

Heo, Jinhee, Deoksu Kim, Chung woo Kim, and Ilsub Chung. "Qualitative doping area characterization of SONOS transistor utilizing scanning capacitance microscopy (SCM) and scanning spread resistance microscopy (SSRM)." Materials Science and Engineering: B 124-125 (December 2005): 301–4. http://dx.doi.org/10.1016/j.mseb.2005.08.097.

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8

CHANG, M. N., C. Y. CHEN, F. M. PAN, T. Y. CHANG, and T. F. LEI. "SCANNING PROBE ANALYSIS OF DEFECTS INDUCED BY SLIGHT IRON CONTAMINATION ON THERMALLY OXIDIZED p-TYPE SILICON WAFERS." International Journal of Nanoscience 02, no. 04n05 (August 2003): 349–55. http://dx.doi.org/10.1142/s0219581x03001383.

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In this article, we have demonstrated the investigation of scanning probe microscopy on the defects induced by slight iron contamination on p-type Si wafers with ultrathin thermal oxide layer. Using scanning capacitance microscopy (SCM) associated with atomic force microscopy, it is revealed that iron contamination induces interface traps, which significantly perturb the depletion behavior of the silicon surface. Moreover, experimental results also indicate that iron contamination leads to the lifetime decrease and the density increase of minority carriers in the defect region. From the dC/dV–V profiles, the defect region with the highest density of the interface traps also has the highest density of the deep-level traps. At a proper dc bias, the defect region clearly exhibits an obvious contrast in the SCM images.

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9

Eriksson, Jens, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Jean Lorenzzi, Gabriel Ferro, and Vito Raineri. "Reliability of Thin Thermally Grown SiO₂ on 3C-SiC Studied by Scanning Probe Microscopy." Materials Science Forum 645-648 (April 2010): 833–36. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.833.

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This paper reports on the electrical characteristics of thermally grown SiO2 on cubic silicon carbide (3C-SiC). The 3C-SiC (111) was grown on Si-face 6H-SiC (0001) on-axis substrates by a non-conventional Vapor-Liquid-Solid (VLS) technique. Scanning probe microscopy techniques, including Atomic Force Microscopy (AFM), Scanning Capacitance Microscopy (SCM) and tunneling AFM (TUNA) were employed to study the morphology, local capacitance and local current variations across the sample surface. This nanoscale investigation allowed monitoring the homogeneity, as well as reliability in terms of dielectric breakdown (BD), of the thermally grown SiO2. In this way it was possible to gain insights into the breakdown related to pre-existing defects (extrinsic breakdown) as well as the actual intrinsic breakdown of the dielectric.

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10

Richards, J. F., and R. J. Kline. "Applications of Scanned Probe Microscopy in the Integrated Circuit Fabrication Industry." Microscopy and Microanalysis 5, S2 (August 1999): 956–57. http://dx.doi.org/10.1017/s1431927600018109.

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Scanning Probe Microscopy (SPM), in particular Atomic Force Microscopy (AFM), has become well establish member of the IC metrology tool arsenal which few IC manufacturers are without. Although Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) remain the “workhorse” metrology techniques, SPM (standard AFM, as well as Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM), Scanning Kelvin probe, Nanoindentaion and others) are being increasingly called upon to help solve IC production problems and to aid in research and development for next generation devices.Topographical metrology with standard AFM is by far the most common application of SPM in the semiconductor industry. It is typically used to gain surface roughness and grain size information about thin films that can be used as feedback to modify deposition conditions until the desired film properties are obtained.

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11

Fiorenza, Patrick, Mario S. Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, and Filippo Giannazzo. "High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy." Nanomaterials 11, no. 6 (June 21, 2021): 1626. http://dx.doi.org/10.3390/nano11061626.

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In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations of the channel geometry occurring under different processing conditions. Moreover, the impact of the ion implantation parameters on the channel could be elucidated.

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12

Wang, Y. Y., J. Nxumalo, W. Zhao, K. Bandy, and K. Nummy. "Dual Lens Electron Holography, Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM) Comparison for Semiconductor 2-D Junction Characterization." Microscopy Today 29, no. 3 (May 2021): 36–44. http://dx.doi.org/10.1017/s1551929521000675.

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13

Biberger, Roland, Guenther Benstetter, Thomas Schweinboeck, Peter Breitschopf, and Holger Goebel. "Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling." Microelectronics Reliability 48, no. 8-9 (August 2008): 1339–42. http://dx.doi.org/10.1016/j.microrel.2008.06.013.

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14

Kitamura, S., K. Suzuki, and C. B. Mooney. "Observation of Contact Potential Difference (CPD) on Semiconducter Surface using Ultrahigh Vacuum Scanning Kelvin Probe Force Microscope (UHV SKPM)." Microscopy and Microanalysis 7, S2 (August 2001): 864–65. http://dx.doi.org/10.1017/s1431927600030397.

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The scanning Kelvin probe force microscope (SKPM) is a member of the scanning probe microscope (SPM) family, and was derived from the non-contact atomic force microscope (NCAFM) technique. The contact potential difference (CPD) originating from the work function difference between the tip and sample surfaces can be measured using SKPM with simultaneous observation of the topography image. Using SKPM the surface of semiconductor device has been observed to measure the dopant concentration as the CPD difference in two dimensions. Most of the SKPM measurements are acquired in the atmosphere. The lateral resolution is achieved less than 100 nm.On the other hand, Scanning capacitance microscope (SCM) of contact mode is now most popular method to measure the dopant concentration in semiconductor device. However, the lateral resolution of SCM is limited, because of the fact that the contact mode cannot achieve a true atomic resolution, the fact that the capacitance is measured through the insulating layer on surface, and the fact that the tip and sample is damaged by the high electric field to be applied between the tip and sample. So SCM never achieves the atomic level resolution.

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15

Coq Germanicus, Rosine, Florent Lallemand, Daniel Chateigner, Wadia Jouha, Niemat Moultif, Olivier Latry, Arnaud Fouchet, Hugues Murray, Catherine Bunel, and Ulrike Lüders. "Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)." Nano Express 2, no. 1 (March 1, 2021): 010037. http://dx.doi.org/10.1088/2632-959x/abed3e.

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16

Krtschil, Andre, Armin Dadgar, Annette Diez, and Alois Krost. "Electrical characterization of defect states in local conductivity domains in ZnO:N,As layers." Journal of Materials Research 22, no. 7 (July 2007): 1775–78. http://dx.doi.org/10.1557/jmr.2007.0238.

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P- and n-type conductivity domains in dual-doped ZnO:As+N layers grown by metal organic vapor phase epitaxy on GaN–sapphire templates were electrically microcharacterized by scanning capacitance microscopy (SCM) and scanning surface potential microscopy (SSPM) techniques with respect to their defect states. The p-type domains were found to be dominated by two acceptors with thermal activation energies of about 80 and 270 meV, as observed by transient SCM scans at different temperatures. Optically excited SSPM scans revealed defect-to-band transitions at 400, 459, and 505 nm omnipresent in both domain types as well as a shallower transition at 377 nm exclusively in the p-type regions. According to the similar energy levels, the optical transitions at 377 and 400 nm are assigned to acceptor states, whereby the 80-meV acceptor is probably responsible for the conversion from n- to p-type regions in the domains.

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17

Fiorenza, P., Marilena Vivona, L. K. Swanson, Filippo Giannazzo, C. Bongiorno, S. Di Franco, S. Lorenti, A. Frazzetto, Thierry Chassagne, and Fabrizio Roccaforte. "Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N₂O and POCl₃." Materials Science Forum 806 (October 2014): 143–47. http://dx.doi.org/10.4028/www.scientific.net/msf.806.143.

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In this paper a comparative study of the impact of N2O and POCl3 annealing on the SiO2/SiC system is presented, combining nanoscale electrical characterization of SiC surface doping by scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) to the conventional capacitance-voltage (C-V) and current-voltage (I-V) measurements on MOS-based devices. A significant reduction of the interface states density (from 1.8×1012 to 5.7×1011 cm-2eV-1) and, correspondingly, an increase in the carrier mobility (from 19 to 108 cm2V-1s-1) was found moving from N2O to POCl3 annealing. Furthermore, SSRM measurements on bare p+-type SiC regions selectively exposed to N2O and POCl3 at high temperature provided the direct demonstration of the incorporation of N or P-related donors in the SiC surface, leading to a partial compensation of substrate acceptors during N2O treatment and to an overcompensation during POCl3 annealing. Finally, cross-sectional SCM profiles performed on epitaxial n-doped 4H-SiC with 45 nm SiO2 (subjected to post deposition annealing in the two ambients) allowed to quantify the active donors concentrations associated to P or N incorporation under the gate oxide, showing almost a factor of ten higher doping (4.5×1018cm-3 vs 5×1017cm-3) in the case of P related donors.

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18

Giannazzo, Filippo, Fabrizio Roccaforte, Dario Salinas, and Vito Raineri. "Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC." Materials Science Forum 600-603 (September 2008): 603–6. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.603.

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In the present work, we systematically studied the effect of the annealing temperature (from 1400 °C to 1650 °C) on the electrical activation of 4H-SiC implanted with multiple energy (from 40 to 550 keV) and medium dose (1×1013 cm-2) Al ions. The evolution of the acceptor (NA) and compensating donor (ND) depth profiles was monitored by the combined use of scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). We demonstrated that the electrical activation of the implanted layer with increasing annealing temperature is the result of the increase in the acceptor concentration and of the decrease in the ND/NA ratio. Atomic force microscopy (AFM) morphological analyses indicated that the surface quality is preserved even after the 1650 °C annealing process.

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19

Fiorenza, Patrick, Salvatore di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, and Fabrizio Roccaforte. "Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O." Materials Science Forum 858 (May 2016): 701–4. http://dx.doi.org/10.4028/www.scientific.net/msf.858.701.

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In this work, the combined effect of a shallow phosphorus (P) pre-implantation and of a nitridation annealing in N2O on the properties of the SiO2/4H-SiC interface has been investigated. The peak carrier concentration and depth extension of the electrically active dopants introduced by the nitridation and by the combination of P pre-implantation and nitridation were determined by high resolution scanning capacitance microscopy (SCM). Macroscopic capacitance-voltage (C-V) measurements on metal oxide semiconductor (MOS) capacitors and nanoscale C-V analyses by SCM allowed to quantify the electrical effect of the donors introduced underneath the SiO2/4H-SiC interface. Phosphorous pre-implantation and subsequent high temperature electrical activation has been shown not only to produce an increased doping in the 4H-SiC surface region but also a better homogeneity of surface potential with respect to the use of N2O annealing only.

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20

Giannazzo, Filippo, Martin Rambach, Dario Salinas, Fabrizio Roccaforte, and Vito Raineri. "Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy." Materials Science Forum 615-617 (March 2009): 457–60. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.457.

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We studied the evolution of the electrical activation with annealing temperature and time in 4H-SiC implanted with Al ions at room temperature (RT). An accurate comparison between the electrical activation data obtained by FPP and SCM was carried out. The dependence of the electrically active profiles on annealing time was studied during isothermal (Tann=1600 °C) annealings for times ranging from 0 (spike anneal) to 30 min. By performing isochronal (t=30 min) processes at temperatures from 1550 to 1650 °C, the effect of the annealing temperature on the net doping concentration profiles was studied. Moreover, the activation energy (6.30.3 eV) associated to the process was extracted from the Arrhenius plot of the net active dose. Finally, the effect of the different thermal budgets on the roughening of the Al implanted 4H-SiC surface was also investigated in details by atomic force microscopy.

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21

Fiorenza, Patrick, Filippo Giannazzo, Lukas K. Swanson, Alessia Frazzetto, Simona Lorenti, Mario S. Alessandrino, and Fabrizio Roccaforte. "A look underneath the SiO2/4H-SiC interface after N2O thermal treatments." Beilstein Journal of Nanotechnology 4 (April 8, 2013): 249–54. http://dx.doi.org/10.3762/bjnano.4.26.

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The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexposed ones; this indicates the incorporation of electrically active nitrogen-related donors, which compensate the p-type doping in the SiC surface region. Cross-sectional SCM measurements on SiO2/4H-SiC metal/oxide/semiconductor (MOS) devices highlighted different active carrier concentration profiles in the first 10 nm underneath the insulator–substrate interface depending on the SiO2/4H-SiC roughness. The electrically active incorporated nitrogen produces both a compensation of the acceptors in the substrate and a reduction of the interface state density (D it). This result can be correlated with the 4H-SiC surface configuration. In particular, lower D it values were obtained for a SiO2/SiC interface on faceted SiC than on planar SiC. These effects were explained in terms of the different surface configuration in faceted SiC that enables the simultaneous exposition at the interface of atomic planes with different orientations.

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22

Giannazzo, Filippo, E. Bruno, S. Mirabella, G. Impellizzeri, E. Napolitani, Vito Raineri, F. Priolo, and Daniel Alquier. "Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si." Solid State Phenomena 108-109 (December 2005): 395–400. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.395.

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In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 °C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer.

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23

Giannazzo, Filippo, Patrick Fiorenza, Mario Saggio, and Fabrizio Roccaforte. "Nanoscale Characterization of SiC Interfaces and Devices." Materials Science Forum 778-780 (February 2014): 407–13. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.407.

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This paper reviews some recent advances in the application of scanning probe microscopy (SPM) electrical characterization techniques to several critical surface and interface issues in SiC technology. High resolution carrier profiling capabilities in SiC of scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were employed for several applications. These included two-dimensional (2D) imaging of doped regions in SiC devices (to be used as input for device simulations or as a feedback for device processing) and the quantitative evaluation of the electrically active profiles of P (or N) and Al implanted 4H-SiC after high temperature treatments. Furthermore, the electrical modification of the SiO2/4H-SiC interface in MOS devices subjected to post-oxide-deposition treatments in NO or N2O and POCl3have been investigated, providing quantitative information on the electrical activation of incorporated N or P in the few-nm-thick SiC interfacial region. The lateral homogeneity of metal/SiC interfaces was probed at nanoscale by conductive atomic force microscopy (CAFM), with a special emphasis given to the case of Schottky contacts on 3C-SiC, where the diode behaviour is strongly affected by the high density of electrically active defects in the substrate. Finally, CAFM has been employed to study the current transport in epitaxial graphene (EG) grown on 4H-SiC (0001), revealing the impact of the substrate morphology (terraces and steps or facets) on the local conductivity.

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Гайнутдинов, Р. В., А. Л. Толстихина, А. К. Лашкова, Н. В. Белугина, В. Н. Шут, С. Е. Мозжаров, and И. Ф. Кашевич. "Применение сканирующей емкостной силовой микроскопии для выявления примесных фаз в сегнетоэлектрике триглицинсульфат." Журнал технической физики 89, no. 11 (2019): 1692. http://dx.doi.org/10.21883/jtf.2019.11.48330.119-19.

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The results of the study of inhomogeneous ferroelectric triglycine sulfate single crystal with a growth periodic impurity structure TGS - TGS + Cr are presented. The impurity distribution was investigated with scanning capacitance force microscopy (SCFM). The peculiarities of the capacitance variations imaging on a doubled and tripled resonant frequency of electrostatic force are considered. The piezoelectric response, surface potential and surface topography were studied. It is shown that capacitive contrast is formed both at the domain boundaries and in the TGS and TGS + Cr bands. It was shown that SCFM allowed one to observe the impurity spatial distribution in the ferroelectric structure at the difference in the chromium concentration about 0.02-0.08 wt%.

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Canino, Mariaconcetta, Filippo Giannazzo, Fabrizio Roccaforte, Antonella Poggi, Sandro Solmi, Vito Raineri, and Roberta Nipoti. "Analysis of the Electrical Activation of P⁺ Implanted Layers as a Function of the Heating Rate of the Annealing Process." Materials Science Forum 556-557 (September 2007): 571–74. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.571.

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The surface morphology and the electrical activation of P+ implanted 4H-SiC were investigated with respect to annealing treatments that differ only for the heating rate. P+ implantation was carried out in lightly doped n-type epitaxial layers. The implantation temperature was 300 °C. The computed P profile was 250 nm thick with a concentration of 1×1020 cm-3. Two samples underwent annealing at 1400 °C in argon with different constant ramp up rates equal to 0.05° C/s and 40 °C/s. A third sample underwent an incoherent light Rapid Thermal Annealing (RTA) at 1100 °C in argon before the annealing at 1400 °C with the lower ramp rate. The ramp up of the RTA process is a few hundred degrees per second. Atomic Force Microscopy (AFM) micrographs pointed out that the surface roughness of the samples annealed at 1400 °C increases with increasing heating rate and that the critical temperature for surface roughening is above 1100 °C. Independently on the annealing cycle, Scanning Capacitance Microscopy (SCM) measurements showed that the P profiles are uniform over the implantation thickness and have plateau concentration around 9×1018 cm-3 in all the implanted samples. The fraction of P atoms activated as donors is 13% of the total implanted fluence.

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26

Weng, Ming Hung, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, and Vito Raineri. "Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC." Solid State Phenomena 156-158 (October 2009): 493–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.493.

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This paper reports a detailed study of the electrical activation and the surface morphology of 4H-SiC implanted with different doping ions (P for n-type doping and Al for p-type doping) and annealed at high temperature (1650–1700 °C) under different surface conditions (with or without a graphite capping layer). The combined use of atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning capacitance microscopy (SCM) allowed to clarify the crucial role played by the implant damage both in evolution of 4H-SiC surface roughness and in the electrical activation of dopants after annealing. The high density of broken bonds by the implant makes surface atoms highly mobile and a peculiar step bunching on the surface is formed during high temperature annealing. This roughness can be minimized by using a capping layer. Furthermore, residual lattice defects or precipitates were found in high dose implanted layers even after high temperature annealing. Those defects adversely affect the electrical activation, especially in the case of Al implantation. Finally, the electrical properties of Ni and Ti/Al alloy contacts on n-type and p-type implanted regions of 4H-SiC were studied. Ohmic behavior was observed for contacts on the P implanted area, whilst high resistivity was obtained in the Al implanted layer. Results showed a correlation of the electrical behavior of contacts with surface morphology, electrical activation and structural defects in ion-implanted, particularly, Al doped layer of 4H-SiC.

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Zhang, Hai Rui, Han Lu Li, and Ji Xiao Wang. "Capacitance Fading Induced by Degradation of Polyaniline: Cyclic Voltammetry and SEM Study." Advanced Materials Research 535-537 (June 2012): 1205–9. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.1205.

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Polyaniline (PANI), one of the most studied conducting polymers (CPs), shows great promising application in supercapacitor in advanced power system. In present work, the capacitance fading of PANI nanofibers modified stainless steel (PANI/SS) electrode was investigated by combination of cyclic voltammetry (CV) and scanning electron microscopy (SEM). The kinetics of capacitance fading can be fitted to a second-order exponential decay. The fading rate constant of the capacitors increases by two orders magnitude when the upper-limit potential in CV increases from 0.55 to 0.80 V vs. SCE. We proposed that there are three factors leading to the capacitance fading, the first one is the hydrolysis of quinoid units in PANI produced during electrodeposition process or/and high potential applied, the second one is chemical degradation of PANI induced by the attack of solvated anions on nitrogen radical cation, and the third one is the electrochemical degradation of PANI which is due to the benzene radical cation. Additionally, the SEM images show that the morphology of newly formed PANI nanofibers are in gel structure, and become clear with the gel structure disappeared after 1000 cycles. Moreover, some regular particles appear at the electrode surface, which are supposed to be produced from the accumulation of the degradation product.

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Shan, Qiu Ju, Hai Rui Zhang, Ji Xiao Wang, Zhi Wang, and Shi Chang Wang. "Preparation and Capacitive Properties of Polyaniline/Au Film." Advanced Materials Research 668 (March 2013): 231–35. http://dx.doi.org/10.4028/www.scientific.net/amr.668.231.

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Polyaniline (PANI) doped with dodecylbenzene sulfonic acid (DBSA) was synthesized by chemical polymerization method, which was dissolved in toluene to prepare the casting solution (PANI, 0.20% w/w). Before casting the prepared solution on the surface of PET to form PANI films, Au was sprayed onto the PET film. The morphology of the obtained PANI/Au films was characterized by field-emission scanning electron microscopy (FE-SEM). The capacitive performance was characterized by cyclic voltammetry and galvanostatic charge-discharge technique in H2SO4 electrolyte under various conditions. The experimental results show that the specific capacitance of the prepared PANI/Au film can reach 280 Fg-1 in 0.50 M H2SO4 electrolyte within the potential range from 0.000 to 0.650 V vs. SCE. The obtained PANI/Au film has extremely high stability which has no obvious decrease for 30000 cycles.

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29

Luo, Gang, Shi Chao Zhang, and Hua Fang. "Facile Synthesis of New Nanocomposite Based on Cobalt Oxide and Carbon Nanotubes with Excellent Electrochemical Capacitive Behavior." Advanced Materials Research 399-401 (November 2011): 1451–56. http://dx.doi.org/10.4028/www.scientific.net/amr.399-401.1451.

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A new two-step synthesis of composite electrode based on carbon nanotubes (CNTs) and cobalt oxide (Co3O4) by electrophoretic deposition of CNTs on Ni foam followed by electrodeposition of cobalt hydroxide on CNTs electrode and heat treatment to form Co3O4/CNTs composite electrode was developed. The structure and morphology of the electrodes were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Their electrochemical performances were evaluated by cyclic voltammetry (CV), galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS). Experimental results indicated that the nanocomposite electrodes exhibitd excellent pseudocapacitive behavior. In the potential range of 0.1- 0.45 V(vs SCE), the nanocomposite electrode showed a high specific capacitance of 867 F•g-1 in 6 M KOH electrolyte and a capacity retention of 90% after 1000 cycles at a current density of 1 A•g-1.

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30

Matey, J. R., and J. Blanc. "Scanning capacitance microscopy." Journal of Applied Physics 57, no. 5 (March 1985): 1437–44. http://dx.doi.org/10.1063/1.334506.

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31

Bugg, C. D., and P. J. King. "Scanning capacitance microscopy." Journal of Physics E: Scientific Instruments 21, no. 2 (February 1988): 147–51. http://dx.doi.org/10.1088/0022-3735/21/2/003.

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32

Jaensch, S., H. Schmidt, and M. Grundmann. "Quantitative scanning capacitance microscopy." Physica B: Condensed Matter 376-377 (April 2006): 913–15. http://dx.doi.org/10.1016/j.physb.2005.12.227.

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33

Balagurov, D. B., A. V. Klyuchnik, and Yu E. Lozovik. "Theory of scanning capacitance microscopy." Physics of the Solid State 42, no. 2 (February 2000): 371–76. http://dx.doi.org/10.1134/1.1131215.

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34

Humer, I., O. Bethge, M. Bodnarchuk, M. Kovalenko, M. Yarema, W. Heiss, H. P. Huber, et al. "Scanning microwave microscopy and scanning capacitance microscopy on colloidal nanocrystals." Journal of Applied Physics 109, no. 6 (March 15, 2011): 064313. http://dx.doi.org/10.1063/1.3553867.

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35

Raineri, Vito, and Filippo Giannazzo. "Scanning Capacitance Microscopy on Semiconductor Materials." Solid State Phenomena 78-79 (April 2001): 425–0. http://dx.doi.org/10.4028/www.scientific.net/ssp.78-79.425.

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36

Shik, Alexander, and Harry E. Ruda. "Theoretical problems of scanning capacitance microscopy." Surface Science 532-535 (June 2003): 1132–35. http://dx.doi.org/10.1016/s0039-6028(03)00087-6.

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37

Zavyalov, V. V., J. S. McMurray, and C. C. Williams. "Noise in scanning capacitance microscopy measurements." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 3 (2000): 1125. http://dx.doi.org/10.1116/1.591476.

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38

Murray, Hugues, Rosine Germanicus, Aziz Doukkali, Patrick Martin, Bernadette Domenges, and Philippe Descamps. "Analytic description of scanning capacitance microscopy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 25, no. 4 (2007): 1340. http://dx.doi.org/10.1116/1.2759218.

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39

Bowallius, O., S. Anand, N. Nordell, G. Landgren, and S. Karlsson. "Scanning capacitance microscopy investigations of SiC structures." Materials Science in Semiconductor Processing 4, no. 1-3 (February 2001): 209–11. http://dx.doi.org/10.1016/s1369-8001(00)00132-3.

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40

Pahlmeyer, M., A. Hankins, S. Tuppan, and W. J. Kim. "Scanning capacitance microscopy using a relaxation oscillator." American Journal of Physics 83, no. 2 (February 2015): 104–9. http://dx.doi.org/10.1119/1.4899045.

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41

Lee, D. T., J. P. Pelz, and Bharat Bhushan. "Scanning capacitance microscopy for thin film measurements." Nanotechnology 17, no. 5 (February 16, 2006): 1484–91. http://dx.doi.org/10.1088/0957-4484/17/5/054.

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42

Yamamoto, Takuma, Yoshihiko Suzuki, Hiroyuki Sugimura, and Nobuyuki Nakagiri. "SiO2/SiSystem Studied by Scanning Capacitance Microscopy." Japanese Journal of Applied Physics 35, Part 1, No. 6B (June 30, 1996): 3793–97. http://dx.doi.org/10.1143/jjap.35.3793.

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43

Stephenson, Robert, Anne Verhulst, Peter De Wolf, Matty Caymax, and Wilfried Vandervorst. "Contrast reversal in scanning capacitance microscopy imaging." Applied Physics Letters 73, no. 18 (November 2, 1998): 2597–99. http://dx.doi.org/10.1063/1.122517.

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44

Tarun, A. B., J. N. Laniog, J. M. Tan, and P. N. Cana. "Junction Leakage Analysis Using Scanning Capacitance Microscopy." IEEE Transactions on Device and Materials Reliability 4, no. 1 (March 2004): 46–49. http://dx.doi.org/10.1109/tdmr.2004.824361.

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45

Chang, Mao-Nan, Yung-Kuang Chen, Hung-Yi Kao, Jhih-Yang Chen, Chun-Hsien Liu, and Yao-Jen Lee. "Voltage modulation efficiency in scanning capacitance microscopy." Ultramicroscopy 224 (May 2021): 113266. http://dx.doi.org/10.1016/j.ultramic.2021.113266.

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46

Eyben, P., N. Duhayon, T. Clarysse, and W. Vandervorst. "Bias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 2 (2003): 737. http://dx.doi.org/10.1116/1.1547724.

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47

Kwon, Joonhyung, Joonhui Kim, Jong-Hwa Jeong, Euy-Kyu Lee, Yong Seok Kim, Chi Jung Kang, and Sang-il Park. "Improved capacitance sensor with variable operating frequency for scanning capacitance microscopy." Ultramicroscopy 105, no. 1-4 (November 2005): 305–11. http://dx.doi.org/10.1016/j.ultramic.2005.06.055.

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48

Tran, T., D. R. Oliver, D. J. Thomson, and G. E. Bridges. "“Zeptofarad” (10−21 F) resolution capacitance sensor for scanning capacitance microscopy." Review of Scientific Instruments 72, no. 6 (June 2001): 2618–23. http://dx.doi.org/10.1063/1.1369637.

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49

AGHAEI, S., P. ANDREI, and M. HAGMANN. "Extracting Impurity Locations using Scanning Capacitance Microscopy Measurements." Advances in Electrical and Computer Engineering 16, no. 3 (2016): 3–8. http://dx.doi.org/10.4316/aece.2016.03001.

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50

Giannazzo, Filippo, Vito Raineri, Vittorio Privitera, and Francesco Priolo. "High-resolution scanning capacitance microscopy by angle bevelling." Materials Science in Semiconductor Processing 4, no. 1-3 (February 2001): 77–80. http://dx.doi.org/10.1016/s1369-8001(00)00171-2.

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