Relevant bibliographies by topics / Schottky-barrier

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Schottky-barrier'

Author: Grafiati
Published: 4 June 2021
Last updated: 21 September 2024

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Journal articles on the topic "Schottky-barrier"

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Zhao, Jian H., Kuang Sheng, and Ramon C. Lebron-Velilla. "SILICON CARBIDE SCHOTTKY BARRIER DIODE." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 821–66. http://dx.doi.org/10.1142/s0129156405003430.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.
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Okino, Hiroyuki, Norifumi Kameshiro, Kumiko Konishi, Naomi Inada, Kazuhiro Mochizuki, Akio Shima, Natsuki Yokoyama, and Renichi Yamada. "Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes." Materials Science Forum 740-742 (January 2013): 881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.881.

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The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.
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Onishchuk, D. A., P. S. Parfenov, A. Dubavik, and A. P. Litvin. "The Influence of the Schottky Barrier at the Metal/PbS NCs Junction on the Charge Transport Properties-=SUP=-*-=/SUP=-." Журнал технической физики 128, no. 8 (2020): 1194. http://dx.doi.org/10.21883/os.2020.08.49725.1002-20.

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The effect of the Schottky barrier height changes on the metal/EDT-treated (1,2-ethanedithiol) PbS nanocrystals film interface is considered. Also, the influence of shunts on the J-V characteristic and the Schottky barrier height is demonstrated, as well, the effect of silver oxide layer on the charge accumulation and tunneling. It is shown that the gold electrodes provide more stable results even when the Schottky barrier is formed, while the silver electrode provides more current. Keywords: semiconductor nanocrystals, Schottky barrier, charge carriers transport, thin films.
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Wu, Shuo-En, and Ya-Ping Hsieh. "Increasing The Efficiency Of Graphene-Based Schottky-Barrier Devices." Advanced Materials Letters 10, no. 2 (December 19, 2018): 132–35. http://dx.doi.org/10.5185/amlett.2019.2183.

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Horng-Chih Lin, Kuan-Lin Yeh, Tiao-Yuan Huang, Ruo-Gu Huang, and S. M. Sze. "Ambipolar Schottky-barrier TFTs." IEEE Transactions on Electron Devices 49, no. 2 (2002): 264–70. http://dx.doi.org/10.1109/16.981216.

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Penney, T., and W. A. Thompson. "Schottky barrier probe tunneling." Journal of Magnetism and Magnetic Materials 52, no. 1-4 (October 1985): 152–56. http://dx.doi.org/10.1016/0304-8853(85)90242-2.

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Chang, S. J., S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen, S. L. Wu, and B. R. Huang. "GaN Schottky Barrier Photodetectors." IEEE Sensors Journal 10, no. 10 (October 2010): 1609–14. http://dx.doi.org/10.1109/jsen.2010.2045889.

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Patel, S. S. "Al–SnSe2 Schottky Barrier." Crystal Research and Technology 26, no. 7 (1991): 911–16. http://dx.doi.org/10.1002/crat.2170260719.

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Sen, Sudipta, and Nabin Baran Manik. "Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles." Advanced Materials Research 1167 (November 9, 2021): 35–42. http://dx.doi.org/10.4028/www.scientific.net/amr.1167.35.

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Characterization of electrical parameters of Copper Phthalocyanine dye has been done in the present work. In the context of electrical parameters, the Schottky barrier and ideality factor of the organic device has been measured and the effects of fullerene nanoparticles on these parameters have been studied. Analysis of electrical parameters has been done by the current-voltage characteristics of the device. The influence of fullerene nanoparticles lessens the Schottky barrier to 0.71 eV from 0.75 eV. The current flow is assumed to be injection limited as the Schottky barrier is greater than 0.3 eV - 0.4 eV. The Schottky barrier is also estimated by the Norde method. Norde's method shows lessening of barrier height from 0.70 eV to 0.65 eV under the influence of fullerene nanoparticles. The measured ideality factor value reduces from 3.787 to 1.495 in presence of fullerene nanoparticles. The charge injection mechanism at metal-organic contact gets influenced by the interfacial Schottky barrier height. Decrease in both Schottky barrier and ideality factor attribute to the increase in charge flow and it allows a reduction in the device’s transition voltage from 2.5 V to 1.0 V.
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Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.
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Dissertations / Theses on the topic "Schottky-barrier"

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Brezeanu, Mihai. "Diamond Schottky barrier diodes." Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/226757.

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Research on wide band gap semiconductors suitable for power electronicdevices has spread rapidly in the last decade. The remarkable results exhibited bysilicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since2001, showed the potential of wide band gap semiconductors for replacing silicon (Si)in the range of medium to high voltage applications, where high frequency operationis required. With superior physical and electrical properties, diamond became apotential competitor to SiC soon after Element Six reported in 2002 the successfulsynthesis of single crystal plasma deposited diamond with high catTier mobility. This thesis discusses the remarkable properties of diamond and introducesseveral device structures suitable for power electronics. The calculation of severalfigures of merit emphasize the advantages of diamond with respect to silicon andother wide band gap semiconductors and clearly identifies the areas where its impactwould be most significant. Information regarding the first synthesis of diamond,which took place back in 1954, together with data regarding the modern technologicalprocess which leads nowadays to high-quality diamond crystals suitable for electronicdevices, are reviewed. Models regarding the incomplete ionization of atomic dopantsand the variation of catTier mobility with doping level and temperature have beenelaborated and included in numerical simulators. The study introduces the novel diamond M-i-P Schottky diode, a version ofpower Schottky diode which takes advantage of the extremely high intrinsic holemobility. The structure overcomes the drawback induced by the high activationenergies of acceptor dopants in diamond which yield poor hole concentration at roomtemperature. The complex shape of the on-state characteristic exhibited by diamondM-i-P Schottky structures is thoroughly investigated by means of experimentalresults, numerical simulations and theoretical considerations. The fabrication of a ramp oxide termination on a diamond device is for thefirst time reported in this thesis. Both experimental and simulated results show thepotential of this termination structure, previously built on Si and SiC power devices. A comprehensive comparison between the ramp oxide and two other versions of thefield plate termination concept, the single step and the three-step structures, has beenperformed, considering aspects such as electrical performance, occupied area,complexity of technological process and cost. Based on experimental results presented in this study, together withpredictions made via simulations and theoretical models, it is concluded that diamondM-i-P Schottky diodes have the ability to deliver significantly higher performancecompared to that of SiC SBDs if issues such as material defects, Schottky contactformation and measurement of reliable ionization coefficients are carefully addressedin the near future.
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Chern, Kevin Tsun-Jen. "GaInN/GaN Schottky Barrier Solar Cells." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/52899.

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GaInN has the potential to revolutionize the solar cell industry, enabling higher efficiency solar cells with its wide bandgap range spanning the entire solar spectrum. However, material quality issues stemming from the large lattice mismatch between its binary endpoints and questionable range of p-type doping has thus far prevented realization of high efficiency solar cells. Nonetheless, amorphous and multi-crystalline forms of GaInN have been theorized to exhibit a defect-free bandgap, enabling GaInN alloys at any indium composition to be realized. But the range of possible p-type doping has not yet been determined and no device quality material has been demonstrated thus far. Nonetheless, a Schottky barrier design (to bypass the p-type doping issue) on single-crystal GaInN can be used to provide some insight into the future of amorphous and micro-crystalline GaInN Schottky barrier solar cells. Through demonstration of a functional single crystalline GaInN Schottky barrier solar cell and comparison of the results to the best published reports for more conventional p-i-n GaInN solar cells, this work aims to establish the feasibility of amorphous and multi-crystalline GaInN solar cells.
Ph. D.
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Fröjdh, Christer. "Schottky barriers and Schottky barrier based device on Si and SiC /." Sundsvall, 1998. http://www.lib.kth.se/abs98/froj0302.pdf.

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Dahlquist, Fanny. "Junction Barrier Schottky Rectifiers in Silicon Carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3367.

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Thambirasa, Grace Padmini. "Study of Cu2O/Cu Schottky barrier junction." Thesis, Thambirasa, Grace Padmini (1985) Study of Cu2O/Cu Schottky barrier junction. PhD thesis, Murdoch University, 1985. https://researchrepository.murdoch.edu.au/id/eprint/52368/.

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The research described in this thesis was carried out in the context of an attempt to develop a new inexpensive material based on simple technology to produce a low cost solar cell. CU2O semiconductor was chosen for this purpose and Schottky barrier CuaO/Cu cells were prepared. The procedures to produce the cells were optimized to get the best performance. The cell was treated chemically to reduce the series resistance and to increase the shunt resistance, which were the main limiting factors found by electrical characterization of the cells. A low barrier height was obtained for the cells which may be due to poor interfaces and mechanical stress at the junction. The optical characterization showed that the spectral photoresponse for these cells had a much narrower band width than for Si solar cells and it also demonstrated the importance of thinner Cu2O films. Minority carrier lifetimes from voltage decay measurements were found to lie between 2 - 4µs. The minority carrier diffusion length was found to be less than 1µm, by comparing experimental and theoretical predictions of the dependence of the spectral photoresponse on the thickness of Cu2O films. The theoretical analysis of efficiency showed that to improve the cell's performance the series resistance should be < 1Ω, with shunt resistance greater than 2kΩ and the saturation current density as low as possible. X-ray diffraction analysis indicated a uniform distribution of copper and oxygen in the Cu2O film. X-ray diffraction using powder methods on the cell showed that the film was preferentially-oriented with the majority of the crystal planes of Cu2O being (110) and (111). This analysis also showed that there were no traces of copper metal inclusions in the Cu2O film. From SIMS analysis it was found that the Cu2O film had some impurities which may or may not affect the cell's performance. The copper - to - oxygen ratio was uniform throughout the film, for the cell, before any chemical treatment. The cells which are treated with Na2S had a sulphur-rich surface which improved the light absorption at the surface of the CU2O and thus improved the current output. The sulphide treatment also reduced the sheet resistance of the films. This analysis shows that Cu2O/Cu solar cells have intrinsic difficulties which limit their potential for low-cost applications. The high resistivity and low barrier heights are fundamental properties of the material and will not be easily overcome with simple technology.
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Yates, Kenneth Lee 1959. "Avalanche characteristics of silicide Schottky barrier diodes." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276634.

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This thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3 to 1.5 mum spectral region. The avalanche process is used to amplify the signal prior to electrical interfacing in order to enhance the signal-to-noise ratio. The amount of multiplication is predicted by the impact ionization coefficients for electrons and holes, alpha and beta, respectively. By using PtSi Schottky diodes, where alpha > beta, pure electron injection can be accomplished by irradiating with photons of energy psi hnu Eg (where psi is the Schottky Barrier height and Eg is the bandgap of silicon), thus maximizing multiplication and minimizing noise. An alternative means for avalanching involves the quantum effects of impurity-band ionization. By using a heavily doped semiconductor and operating at low temperatures, one can achieve noise-free gain at lower electric field strengths. (Abstract shortened with permission of author.)
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Blasciuc-Dimitriu, Cezar. "Theoretical modelling of Schottky barrier diodes in SiC." Thesis, University of Newcastle Upon Tyne, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405314.

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Ngoepe, P. N. M. (Phuti Ngako Mahloka). "Optoelectronic characterisation of AlGaN based Schottky barrier diodes." Diss., University of Pretoria, 2013. http://hdl.handle.net/2263/24890.

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Recent advances in growth techniques have lead to the production of high quality GaN and this has played a vital role in the improvement of GaN based devices. A number of device types can be produced from GaN. Spectrally selective devices can be produced by creating ternary or quaternary material systems by partially substituting either Al or In for Ga in GaN. This allows a wide spectral range that can be achieved ranging from the visible to the ultraviolet. The applications of detectors based on these material systems are vast and include areas such as biological, military, environmental, industrial and scientific spheres. In front illuminated Schottky barrier photodetectors, two major factors influencing the sensitivity of the device are the reverse leakage current and the transparency of the Schottky contact. In order to reduce the reverse current of semiconductor based devices, increase the barrier height, and enhance the adhesion of a metal on a semiconductor it is important to subject the contact to annealing. Annealing studies have been performed on AlGaN based photodiodes to investigate the evolution of the optical and electrical properties. In this study, the electrical and optical characteristics of AlGaN based Ni/Au and Ni/Ir/Au Schottky photodiodes were investigated. The electrical properties of the photodiodes were optimised by annealing in an Ar ambient. An increase in the Schottky barrier height and a decrease in the reverse leakage current were observed with increasing annealing temperature up to 500 oC. This effect was observed for both the Ni/Au and Ni/Ir/Au photodiodes. The optical characteristics of the photodiodes, which include the responsivity and the quantum efficiency, were also investigated. UV/visible rejection ratios of as high as 103 were obtained. The transmittance of Ni/Au and Ni/Ir/Au metal layers deposited on a quartz substrate were optimised by annealing. This was under the same ambient conditions as the Schottky photodiode. The transmittance increased with annealing temperature for the Ni/Au metal layer whereas it decreased at higher temperatures for the Ni/Ir/Au layer. The transmittance of the Ni/Au metal layer reached as high as 85 % after 500 oC annealing. The transmittance of the Ni/Ir/Au only reached a high of 41 % after 400 oC annealing.
Dissertation (MSc)--University of Pretoria, 2013.
Physics
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Zhang, Min. "Modelling and fabrication of high performance Schottky barrier SOI-MOSFETs with low effective Schottky barriers." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=982694466.

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Korkmaz, Sibel. "Characterization Of Cds Thin Films And Schottky Barrier Diodes." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606623/index.pdf.

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CdS thin films were deposited by thermal evaporation method onto glass substrates without any doping. As a result of the structural and electrical investigation it was found that CdS thin films were of the polycrystalline structure and n-type
and of the transmission analysis optical band gap was found to be around 2.4 eV. Temperature dependent conductivity measurements were carried out in the range of 180 K &ndash
400 K. The dominant conduction mechanism is identified as tunnelling between 180 K &ndash
230 K and thermionic emission between 270 K and 400 K. To produce Schottky devices, CdS thin films were deposited onto the tin-oxide and indium-tin-oxide coated glasses, by the same method. Gold, platinum, carbon and gold paste were used as metal front contact in these devices. The area of these contacts were about...... Temperature dependent current-voltage measurements between 200 K and 350 K, room temperature current-voltage measurements, capacitance-voltage measurement in the frequency range 1 kHz &ndash
1 MHz and photoresponse measurements were carried out for the characterization of these diodes. Ideality factor of the produced Schottky devices were found to be at least 1.5, at room temperature. Dominant current transport mechanism in the diodes with gold contacts was determined to be tunnelling from the temperature dependent current voltage analysis. Donor concentration was calculated to be about ........ from the voltage dependent capacitance measurement.
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Books on the topic "Schottky-barrier"

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Bakush, Moftah Mohamed. Minority carrier injection in high barrier Schottky diodes: An analytical model. Manchester: University of Manchester, 1993.

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P, Chen N., ed. Handbook of light emitting and Schottky diode research. Hauppauge, NY: Nova Science Publishers, 2009.

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United States. National Aeronautics and Space Administration., ed. On the relationship between Schottky barrier capacitance and mixer performance at cryogenic temperatures. [Washington, DC: National Aeronautics and Space Administration, 1996.

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Incorporated, Texas Instruments, ed. ALS/AS logic data book. [Dallas, Tex.]: Texas Instruments, 1986.

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Meier, Johann Emil. Herstellung und Untersuchung passivierender Grenzschichten in amorphen Silizium Schottky-Solarzellen. Konstanz: Hartung-Gorre, 1992.

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Incorporated, Texas Instruments, ed. The TTL logic data book. [Dallas, Tex.]: Texas Instruments, 1988.

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W, Bishop, Mattauch R. J, and Goddard Space Flight Center. Instrument Division., eds. Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications: Final progress report April 15, 1989 - December 31, 1989. Charlottesville, VA: School of Engineering & Applied Science, University of Virginia, 1990.

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Evans, Howard Lee. Measurement of Schottky barrier interface states. 1986.

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L, Sharma B. Metal-Semiconductor Schottky Barrier Junctions and Their Applications. Springer London, Limited, 2013.

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Metal--Semiconductor Schottky Barrier Junctions and Their Applications. Springer, 2012.

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Book chapters on the topic "Schottky-barrier"

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Böer, Karl W. "The Schottky Barrier." In Springer Series in Solid-State Sciences, 41–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02236-4_3.

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Singh, Ranbir, and B. Jayant Baliga. "Schottky Barrier Diodes." In Cryogenic Operation of Silicon Power Devices, 25–35. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5751-7_3.

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Böer, Karl W. "The Schottky Barrier." In Survey of Semiconductor Physics, 472–525. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2912-1_14.

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Böer, Karl W. "The Schottky Barrier." In Handbook of the Physics of Thin-Film Solar Cells, 447–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_26.

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Baliga, B. Jayant. "Trench Schottky Barrier Controlled Schottky Rectifiers." In Advanced Power Rectifier Concepts, 75–115. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-75589-2_4.

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Böer, Karl W. "The Schottky Barrier Photodiode." In Springer Series in Solid-State Sciences, 219–26. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02236-4_9.

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Meyer, B. K. "ZnO: Schottky barrier height." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 616–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_340.

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Böer, Karl W. "The Schottky Barrier Photodiode." In Survey of Semiconductor Physics, 720–38. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2912-1_22.

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Perfetti, P. "The Problem of Schottky Barrier." In Electrified Interfaces in Physics, Chemistry and Biology, 153–77. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2566-6_5.

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Baliga, B. Jayant. "Junction Barrier Controlled Schottky Rectifiers." In Advanced Power Rectifier Concepts, 29–74. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-75589-2_3.

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Conference papers on the topic "Schottky-barrier"

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Zhang, Boya, Dongqing Hu, Xintian Zhou, Yu Wu, Yunpeng Jia, and Yun Tang. "GaN Schottky diode with composed trench MIS barrier and junction barrier." In 3rd International Conference on Advanced Manufacturing Technology and Manufacturing Systems (ICAMTMS 2024), edited by Dailin Zhang and Ke Zhang, 91. SPIE, 2024. http://dx.doi.org/10.1117/12.3038402.

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Bing-Yue Tsui and Chi-Pei Lu. "Current transport mechanisms of Schottky barrier and modified Schottky barrier MOSFETs." In ESSDERC 2007 - 37th European Solid State Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/essderc.2007.4430939.

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Averin, S. V., A. Kohl, A. Mesquida Kusters, and Klaus Heime. "Enhanced barrier height GaInAs MSM Schottky barrier photodiodes." In Optical Information Processing: International Conference, edited by Yuri V. Gulyaev and Dennis R. Pape. SPIE, 1994. http://dx.doi.org/10.1117/12.165991.

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Grebel, Haim, K. J. Fang, and C. Manolis. "Patterned Schottky barrier solar cells." In Microelectronic Processing '92, edited by Dim-Lee Kwong and Heinrich G. Mueller. SPIE, 1993. http://dx.doi.org/10.1117/12.142083.

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Modi, B. P., K. D. Patel, S. K. Tripathi, Keya Dharamvir, Ranjan Kumar, and G. S. S. Saini. "Schottky Barrier with Liquid Metal." In INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011). AIP, 2011. http://dx.doi.org/10.1063/1.3653637.

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Kosonocky, Walter F. "Schottky-barrier focal plane arrays." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.mhh1.

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This paper reviews the progress in the development of infrared image sensors with Schottky-barrier detectors (SBDs). Schottky-barrier focal plane arrays (FPAs) are infrared imagers that are fabricated by a well established silicon VLSI process; therefore, at the present time they represent the most advanced technology for large-area high-density focal plane arrays for many SWIR (1 to 3 μm) and MWIR (3 to 5 μm) applications. SBD line sensing arrays with up to 4096 × 4 elements and 2048 × 16 TDI elements were developed, and SBD staring (area) arrays with up to 1040 × 1040 elements have been reported. PtSi SBDs represent the most established SBD technology for applications in the SWIR and MWIR bands. At an operating temperature of 77 K, the dark current density of PtSi SBDs is in the range of 1.0 to 4.0 nÅ/cm2. Pd2Si SBDs were developed for operation with passive cooling at 120 K in the SWIR band. IrSi SBDs have also been investigated to extend the application of Schottky-barrier FPAs into the LWIR (8 to 10 μm) spectral range. Because of very low readout noise, the IR-CCD imagers with PtSi SBDs that have quantum efficiency of 0.5% to 1% at 4.0 μm are capable of 300-K thermal imaging with a noise equivalent temperature (NEΔT) from 0.033 to 0.15 K for operation at 30 frames/s and f/1.0 to f/2.8 optics.
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Seok, O., W. Ahn, Y. Kim, M. Ha, and M. Han. "AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-6-6.

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Schwarz, Mike, John P. Snyder, Tillmann Krauss, Udo Schwalke, Laurie E. Calvet, and Alexander Kloes. "Simulation framework for barrier lowering in Schottky barrier MOSFETs." In 2017 MIXDES - 24th International Conference "Mixed Design of Integrated Circuits and Systems". IEEE, 2017. http://dx.doi.org/10.23919/mixdes.2017.8005172.

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Kiat, Wong King, Razali Ismail, and M. Taghi Ahmadi. "Schottky barrier lowering effect on graphene nanoribbon based schottky diode." In 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2013. http://dx.doi.org/10.1109/rsm.2013.6706543.

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Erofeev, Evgeny V., and Ivan V. Fedin. "Fast switching GaN Schottky barrier diodes." In 2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM). IEEE, 2016. http://dx.doi.org/10.1109/edm.2016.7538688.

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Reports on the topic "Schottky-barrier"

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Shallcross, F. V., W. F. Kosonocky, T. S. Villani, G. M. Meray, III O'Neill, and J. M. Improved 320x244 - Element PtSi Schottky - Barrier IR-CCD Image Sensor. Fort Belvoir, VA: Defense Technical Information Center, September 1991. http://dx.doi.org/10.21236/ada242026.

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Holck, D. Characterization and development report for the 375492: A Schottky barrier diode die. Office of Scientific and Technical Information (OSTI), June 1990. http://dx.doi.org/10.2172/6879807.

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