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1
Brezeanu, Mihai. "Diamond Schottky barrier diodes." Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/226757.
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Research on wide band gap semiconductors suitable for power electronicdevices has spread rapidly in the last decade. The remarkable results exhibited bysilicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since2001, showed the potential of wide band gap semiconductors for replacing silicon (Si)in the range of medium to high voltage applications, where high frequency operationis required. With superior physical and electrical properties, diamond became apotential competitor to SiC soon after Element Six reported in 2002 the successfulsynthesis of single crystal plasma deposited diamond with high catTier mobility. This thesis discusses the remarkable properties of diamond and introducesseveral device structures suitable for power electronics. The calculation of severalfigures of merit emphasize the advantages of diamond with respect to silicon andother wide band gap semiconductors and clearly identifies the areas where its impactwould be most significant. Information regarding the first synthesis of diamond,which took place back in 1954, together with data regarding the modern technologicalprocess which leads nowadays to high-quality diamond crystals suitable for electronicdevices, are reviewed. Models regarding the incomplete ionization of atomic dopantsand the variation of catTier mobility with doping level and temperature have beenelaborated and included in numerical simulators. The study introduces the novel diamond M-i-P Schottky diode, a version ofpower Schottky diode which takes advantage of the extremely high intrinsic holemobility. The structure overcomes the drawback induced by the high activationenergies of acceptor dopants in diamond which yield poor hole concentration at roomtemperature. The complex shape of the on-state characteristic exhibited by diamondM-i-P Schottky structures is thoroughly investigated by means of experimentalresults, numerical simulations and theoretical considerations. The fabrication of a ramp oxide termination on a diamond device is for thefirst time reported in this thesis. Both experimental and simulated results show thepotential of this termination structure, previously built on Si and SiC power devices. A comprehensive comparison between the ramp oxide and two other versions of thefield plate termination concept, the single step and the three-step structures, has beenperformed, considering aspects such as electrical performance, occupied area,complexity of technological process and cost. Based on experimental results presented in this study, together withpredictions made via simulations and theoretical models, it is concluded that diamondM-i-P Schottky diodes have the ability to deliver significantly higher performancecompared to that of SiC SBDs if issues such as material defects, Schottky contactformation and measurement of reliable ionization coefficients are carefully addressedin the near future.
2
Chern, Kevin Tsun-Jen. "GaInN/GaN Schottky Barrier Solar Cells." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/52899.
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GaInN has the potential to revolutionize the solar cell industry, enabling higher efficiency solar cells with its wide bandgap range spanning the entire solar spectrum. However, material quality issues stemming from the large lattice mismatch between its binary endpoints and questionable range of p-type doping has thus far prevented realization of high efficiency solar cells. Nonetheless, amorphous and multi-crystalline forms of GaInN have been theorized to exhibit a defect-free bandgap, enabling GaInN alloys at any indium composition to be realized. But the range of possible p-type doping has not yet been determined and no device quality material has been demonstrated thus far. Nonetheless, a Schottky barrier design (to bypass the p-type doping issue) on single-crystal GaInN can be used to provide some insight into the future of amorphous and micro-crystalline GaInN Schottky barrier solar cells. Through demonstration of a functional single crystalline GaInN Schottky barrier solar cell and comparison of the results to the best published reports for more conventional p-i-n GaInN solar cells, this work aims to establish the feasibility of amorphous and multi-crystalline GaInN solar cells.Ph. D.
3
Fröjdh, Christer. "Schottky barriers and Schottky barrier based device on Si and SiC /." Sundsvall, 1998. http://www.lib.kth.se/abs98/froj0302.pdf.
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Dahlquist, Fanny. "Junction Barrier Schottky Rectifiers in Silicon Carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3367.
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Thambirasa, Grace Padmini. "Study of Cu2O/Cu Schottky barrier junction." Thesis, Thambirasa, Grace Padmini (1985) Study of Cu2O/Cu Schottky barrier junction. PhD thesis, Murdoch University, 1985. https://researchrepository.murdoch.edu.au/id/eprint/52368/.
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The research described in this thesis was carried out in the context of an attempt to develop a new inexpensive material based on simple technology to produce a low cost solar cell.
CU2O semiconductor was chosen for this purpose and Schottky barrier CuaO/Cu cells were prepared. The procedures to produce the cells were optimized to get the best performance.
The cell was treated chemically to reduce the series resistance and to increase the shunt resistance, which were the main limiting factors found by electrical characterization of the cells.
A low barrier height was obtained for the cells which may be due to poor interfaces and mechanical stress at the junction.
The optical characterization showed that the spectral photoresponse for these cells had a much narrower band width than for Si solar cells and it also demonstrated the importance of thinner Cu2O films. Minority carrier lifetimes from voltage decay measurements were found to lie between 2 - 4µs. The minority carrier diffusion length was found to be less than 1µm, by comparing experimental and theoretical predictions of the dependence of the spectral photoresponse on the thickness of Cu2O films.
The theoretical analysis of efficiency showed that to improve the cell's performance the series resistance should be < 1Ω, with shunt resistance greater than 2kΩ and the saturation current density as low as possible.
X-ray diffraction analysis indicated a uniform distribution of copper and oxygen in the Cu2O film. X-ray diffraction using powder methods on the cell showed that the film was preferentially-oriented with the majority of the crystal planes of Cu2O being (110) and (111). This analysis also showed that there were no traces of copper metal inclusions in the Cu2O film.
From SIMS analysis it was found that the Cu2O film had some impurities which may or may not affect the cell's performance. The copper - to - oxygen ratio was uniform throughout the film, for the cell, before any chemical treatment. The cells which are treated with Na2S had a sulphur-rich surface which improved the light absorption at the surface of the CU2O and thus improved the current output. The sulphide treatment also reduced the sheet resistance of the films.
This analysis shows that Cu2O/Cu solar cells have intrinsic difficulties which limit their potential for low-cost applications. The high resistivity and low barrier heights are fundamental properties of the material and will not be easily overcome with simple technology.
6
Yates, Kenneth Lee 1959. "Avalanche characteristics of silicide Schottky barrier diodes." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276634.
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This thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3 to 1.5 mum spectral region. The avalanche process is used to amplify the signal prior to electrical interfacing in order to enhance the signal-to-noise ratio. The amount of multiplication is predicted by the impact ionization coefficients for electrons and holes, alpha and beta, respectively. By using PtSi Schottky diodes, where alpha > beta, pure electron injection can be accomplished by irradiating with photons of energy psi hnu Eg (where psi is the Schottky Barrier height and Eg is the bandgap of silicon), thus maximizing multiplication and minimizing noise. An alternative means for avalanching involves the quantum effects of impurity-band ionization. By using a heavily doped semiconductor and operating at low temperatures, one can achieve noise-free gain at lower electric field strengths. (Abstract shortened with permission of author.)
7
Blasciuc-Dimitriu, Cezar. "Theoretical modelling of Schottky barrier diodes in SiC." Thesis, University of Newcastle Upon Tyne, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405314.
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Ngoepe, P. N. M. (Phuti Ngako Mahloka). "Optoelectronic characterisation of AlGaN based Schottky barrier diodes." Diss., University of Pretoria, 2013. http://hdl.handle.net/2263/24890.
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Recent advances in growth techniques have lead to the production of high quality GaN and this has played a vital role in the improvement of GaN based devices. A number of device types can be produced from GaN. Spectrally selective devices can be produced by creating ternary or quaternary material systems by partially substituting either Al or In for Ga in GaN. This allows a wide spectral range that can be achieved ranging from the visible to the ultraviolet. The applications of detectors based on these material systems are vast and include areas such as biological, military, environmental, industrial and scientific spheres. In front illuminated Schottky barrier photodetectors, two major factors influencing the sensitivity of the device are the reverse leakage current and the transparency of the Schottky contact. In order to reduce the reverse current of semiconductor based devices, increase the barrier height, and enhance the adhesion of a metal on a semiconductor it is important to subject the contact to annealing. Annealing studies have been performed on AlGaN based photodiodes to investigate the evolution of the optical and electrical properties. In this study, the electrical and optical characteristics of AlGaN based Ni/Au and Ni/Ir/Au Schottky photodiodes were investigated. The electrical properties of the photodiodes were optimised by annealing in an Ar ambient. An increase in the Schottky barrier height and a decrease in the reverse leakage current were observed with increasing annealing temperature up to 500 oC. This effect was observed for both the Ni/Au and Ni/Ir/Au photodiodes. The optical characteristics of the photodiodes, which include the responsivity and the quantum efficiency, were also investigated. UV/visible rejection ratios of as high as 103 were obtained. The transmittance of Ni/Au and Ni/Ir/Au metal layers deposited on a quartz substrate were optimised by annealing. This was under the same ambient conditions as the Schottky photodiode. The transmittance increased with annealing temperature for the Ni/Au metal layer whereas it decreased at higher temperatures for the Ni/Ir/Au layer. The transmittance of the Ni/Au metal layer reached as high as 85 % after 500 oC annealing. The transmittance of the Ni/Ir/Au only reached a high of 41 % after 400 oC annealing.Dissertation (MSc)--University of Pretoria, 2013.
Physics
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Zhang, Min. "Modelling and fabrication of high performance Schottky barrier SOI-MOSFETs with low effective Schottky barriers." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=982694466.
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Korkmaz, Sibel. "Characterization Of Cds Thin Films And Schottky Barrier Diodes." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606623/index.pdf.
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CdS thin films were deposited by thermal evaporation method onto glass substrates without any doping. As a result of the structural and electrical investigation it was found that CdS thin films were of the polycrystalline structure and n-typeand of the transmission analysis optical band gap was found to be around 2.4 eV. Temperature dependent conductivity measurements were carried out in the range of 180 K &ndash
400 K. The dominant conduction mechanism is identified as tunnelling between 180 K &ndash
230 K and thermionic emission between 270 K and 400 K. To produce Schottky devices, CdS thin films were deposited onto the tin-oxide and indium-tin-oxide coated glasses, by the same method. Gold, platinum, carbon and gold paste were used as metal front contact in these devices. The area of these contacts were about...... Temperature dependent current-voltage measurements between 200 K and 350 K, room temperature current-voltage measurements, capacitance-voltage measurement in the frequency range 1 kHz &ndash
1 MHz and photoresponse measurements were carried out for the characterization of these diodes. Ideality factor of the produced Schottky devices were found to be at least 1.5, at room temperature. Dominant current transport mechanism in the diodes with gold contacts was determined to be tunnelling from the temperature dependent current voltage analysis. Donor concentration was calculated to be about ........ from the voltage dependent capacitance measurement.
11
Magill, Stephen Hugh Samuel. "The application of Schottky barrier diodes to infrared imaging." Thesis, Queen's University Belfast, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283889.
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Naredla, Sai Bhargav. "Electrical Properties of Molybdenum Silicon Carbide Schottky Barrier Diodes." Youngstown State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ysu155901806279725.
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Kummari, Rani S. "Improved SiC Schottky Barrier Diodes Using Refractory Metal Borides." Connect to resource online, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1266422079.
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Xu, Hui Park Minseo. "Fabrication and electrical/optical characterization of bulk GaN-based Schottky diodes." Auburn, Ala, 2009. http://hdl.handle.net/10415/1871.
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Diale, Mmantsae Moche. "Schottky barrier diode fabrication on n-GaN for ultraviolet detection /." Access to E-Thesis, 2009. http://upetd.up.ac.za/thesis/available/etd-02112010-211125/.
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Burnett, George Evan. "STATISTICAL YIELD AND PRELIMINARY CHARACTERIZATION OF SiC SCHOTTKY BARRIER DIODES." MSSTATE, 2001. http://sun.library.msstate.edu/ETD-db/theses/available/etd-04102001-093048/.
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High-voltage SiC Schottky barrier diodes have been fabricated with 1mm square contacts. The SBD?s were fabricated using both an argon implant and a field plate overlap for edge termination. The current-voltage characterization of the diodes is presented with statistical yield information on the first set of diodes produced from the Mississippi Center for Advanced Semiconductor Prototyping. After packaging, reverse bias breakdown voltages over 500V at 0.1 A/cm2 and an on-state forward voltage drop of less than 2.5V at 100 A/cm2 were demonstrated. A 0.65-0.85 eV barrier height was extracted from the SBD?s using I-V measurements. Field plate terminated devices demonstrated consistent, low standard deviation breakdown voltages and low leakage currents. The argon implanted devices demonstrated a higher breakdown voltage with higher leakage currents and a higher standard deviation. It was proven that the diodes followed the thermionic field emission model for up to one third of the breakdown voltage. Over 15,000 diodes have been tested and results analyzed in this work.
17
Kashefi-Naini, A. "A study of some transition metal-silicon Schottky barrier diodes." Thesis, University of Kent, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375200.
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Morrison, Dominique Johanne. "The fabrication and characterisation of 4H-SiC Schottky barrier diodes." Thesis, University of Newcastle Upon Tyne, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.324784.
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Dong, Longtao. "Development of an electrodeposited PdNi-Si Schottky barrier hydrogen sensor." Thesis, University of Southampton, 2015. https://eprints.soton.ac.uk/376508/.
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Diale, M. (Mmantsae Moche). "Schottky barrier diode fabrication on n-GaN for altraviolet detection." Thesis, University of Pretoria, 2010. http://hdl.handle.net/2263/28143.
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There are many potential areas for the utilization of GaN-based nitride materials, including ultraviolet photodetectors. Ultraviolet photodetectors are used in the military for missile plume detection and space communications. Medically, ultraviolet photodiodes are used in monitoring skin cancer. Schottky barrier metal-semiconductor contacts are choice devices for the manufacture of ultraviolet photodiodes due to higher short wavelength sensitivity and fast response. They also require simple fabrication technology; suffer lower breakdown voltages, and record larger leakage currents at lower voltages as compared to p-n structures of the same semiconductor material. Thus the formation of a Schottky contact with high barrier height, low leakage current, and good thermal stability in order to withstand high temperature processing and operation are some of the most important factors in improving the performance of Schottky barrier photodiodes to be used for ultraviolet detection. The first stage of this study was to establish a chemical cleaning and etching technique. It was found that KOH was suitable in reducing C from the surface and that (NH4)2S further reduced the surface oxides. The next phase of the work was to select a metal that will allow UV light to pass through at a high transmission percentage: a combination of annealed Ni/Au was found to be ideal. The transmission percentage of this alloy was found to be above 80%. The next phase was the fabrication of Ni/Au Schottky barrier diodes on GaN to study the electrical characteristics of the diodes. Electrical characterization of the diodes showed that the dominant current transport mechanism was thermionic emission, masked by the effects of series resistance, which resulted from the condition of the GaN surface. Finally, we fabricated GaN UV photodiodes and characterized them in the optoelectronic station designed and produced during this research. Device responsivity as high as 31.8 mA/W for GaN and 3.8 mA/W for AlGaN were recorded. The calculated quantum efficiencies of the photodiodes were 11 % for GaN and 1.7 % for AlGaN respectively.Thesis (PhD)--University of Pretoria, 2010.
Physics
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21
Maguire, Paul. "The characteristics of field effect transistors with Schottky barrier source and drain electrodes." Thesis, Queen's University Belfast, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329351.
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MOONEY, JONATHAN MARTIN. "INVESTIGATION OF THE PROCESS OF INTERNAL PHOTOEMISSION IN PLATINUM SILICIDE SCHOTTKY BARRIER DIODES (DETECTOR, INFRARED)." Diss., The University of Arizona, 1986. http://hdl.handle.net/10150/188156.
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In this work, the theory of internal photoemission is reviewed and extended for the special case of platinum silicide Schottky barrier infrared photodiodes. Vickers' model of hot-electron-mode photodetection is recast in terms of hot-holes, and the effects of carrier energy loss due to phonon collisions, as well as the depletion of the occupation of the emitting states due to emission are included. The optical absorption of the Schottky diodes is measured and used to relate the quantum efficiency of the diodes to the internal yield as calculated from the model. By including the effects of the carrier energy loss due to phonon collisions and the depletion of the occupation of the emitting states in the model, one can resolve previously unexplained anomalies in the photoresponse data (the shape of the Fowler plots, the absolute magnitude of the yield, and the difference between the optical and thermal barriers). Independent estimates are obtained for the mean-free-path between hot-hole/phonon, hot-hole/cold-electron, and hot-hole/imperfection collisions as well as the mean phonon energy, mean transmission coefficient across the Schottky barrier, and the Fermi energy. The model is found to be in excellent agreement with the experimental data for parameter values consistent with those reported in the literature. Some degree of correlation is found to exist between the one free variable for each diode and the processing used for that diode. Namely, the temperature of the substrate during deposition is correlated with the value of the mean-free-path between imperfection scattering events.
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Che, Yulu. "Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1282070943.
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Arnold, John Christopher 1964. "Modification of Schottky diode performance due to ion bombardment." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277047.
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An experimental and theoretical analysis of the effects of ion bombardment on Schottky diodes is presented. The experimentally observed shifts in diode performance are compared to the conditions of ion exposure. These experiments show that Schottky diodes exposed to ion beams show decreases in effective barrier heights and ideality factors, as well as increased incidence of premature reverse breakdown. The change in barrier height is found to be proportional to the energy of the individual ions and the total number of ions delivered to the surface. A numerical simulation of the damage process and device performance is developed. The model considers only the effect of ion exposure on the potential distribution within the metal-semiconductor junction. Comparison of experimental and modelled barrier shifts shows fair agreement, suggesting that enhancement of tunnelling currents is the dominant mechanism for barrier lowering.
25
Zhang, Zhen. "Integration of silicide nanowires as Schottky barrier source/drain in FinFETs." Doctoral thesis, Stockholm : Informations- och kommunikationsteknik, Kungliga Tekniska högskolan, 2008. http://www.diva-portal.org/kth/theses/abstract.xsql?dbid=4628.
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Evans, D. A. "The metal-indium phosphide (110) interface : Interactions and Schottky barrier formation." Thesis, Bucks New University, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234721.
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Kundeti, Krishna Chaitanya. "The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts." Youngstown State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1495150103584503.
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Hardy, Philippa Kate. "Fabrication and characterisation of a nanocrystal activated Schottky barrier solar cell." Thesis, University of Leeds, 2014. http://etheses.whiterose.ac.uk/7517/.
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Climate change is a reality and a move away from fossil fuels to renewable energy technologies is an essential part of mitigation efforts. Photovoltaics (PV) provide a way to generate clean and renewable energy from a ubiquitous source. Despite this,fossil fuels are still deeply entrenched in the global energy system, in part due to their low cost. Silicon solar cells currently dominate the PV market,however, their levelised cost is relatively high compared to other energy technologies. Therefore, if PV is to achieve its full potential, there is a need to develop low cost solar cells to enable global uptake of this promising technology. The aim of this research was to demonstrate a nanocrystal (NC) activated Schottky barrier solar cell fabricated using relatively ambient processes. Ti film was anodised or thermally oxidised and the Schottky barrier was subsequently formed at the interface between TiO2 and the noble metal, Au, Ag, or Pt, which were sputtered, evaporated or dropcast in nanowire (NW) form. In the absence of activating nanocrystals, the Schottky barrier functions as an efficient cell but only for UV light due to the wide band gap of TiO2. Nanocrystals with a narrower band gap were deposited on the Schottky barrier to extend the response into the visible region. The cells fabricated with Ag NWs and Pt provided the largest Schottky barrier heights of 1.02 eV and 1 eV respectively. The Pt device obtained the largest UV photoresponse of 390 μAcm-2 and 721 mV at 330 nm, and external quantum efficiency (EQE) of 18% at 330 nm. The Pt and AgNW cells were subsequently activated with CdS, CdSe, CuO, CuInS2 and CdTe NCs. The CdS-NC/Pt, CdS-NC/Ag-NW, and CuInS2-NC/Ag-NW devices, in particular, provided proof-of-concept, generating a UV photoresponse from the TiO2 and a visible photoresponse from the NCs consistent with the respective band gaps. The optimum EQE measured for the CdS-NC/Pt device was 0.04% at 470 nm. Hence, this work demonstrates the NC activated Schottky barrier solar cell and provides a possible low cost fabrication route for future development.
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Zhou, Yi Park Minseo. "Bulk gallium nitride based electronic devices Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors /." Auburn, Ala., 2007. http://hdl.handle.net/10415/1401.
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Honda, S., H. Itoh, J. Inoue, H. Kurebayashi, T. Trypiniotis, C. H. W. Barnes, A. Hirohata, and J. A. C. Bland. "Spin polarization control through resonant states in an Fe/GaAs Schottky barrier." American Physical Society, 2008. http://hdl.handle.net/2237/11246.
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Penate, Quesada L. "Exploiting resistive macro to nano scale metal electrodes in Schottky barrier structures." Thesis, Queen's University Belfast, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.492515.
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This thesis investigates the use of thin resistive metal electrodes in the formation of Schottky barrier structures where the resistance measured along the electrode exhibits a characteristic change as a function of temperature dictated by the Schottky barrier properties. A combination of optical and resistance measurements (15-300K) on thin Al films were undertaken. Deviations of the real and imaginary parts of the . dielectric function from bulk valuek were significant for films thinner than ~15nm. The observed trend was confirmed by evaluating the resistivity data. The estimated thickness threshold for which the resistivity ratio (pjilm/pbulk) -- -I} became significantly greater than unity is ~8 nm for Al films. Thinner Al film showed poor inter-grain connectivity and a deteriorating interface quality. Resistance measurements on macro-scale Al and Pt electrodes and micro-scale Pt electrodes on p-type Si revealed a marked resistance increase by a factor of up to six over a temperature interval of 40-60K when decreasing temperature. The characteristic change of resistance is due to thermal confinement of charge carriers in the metal electrode, preventing any conduction channel through the substrate. This behaviour was modelled by considering the electrode and the substrate as two resistors in parallel with the Schottky barrier (barrier height determined by applying theory of thermionic emission) acting as the connecting component. The electrical and structural properties of Focused Ion Beam deposited Pt nanowires were analysed. EDX analysis revealed metal rich grains (atomic composition 31%Pt) in a large non-metallic matrix. Resistivity measurements (15-300K) indicated insulating behaviour with the room-temperature resistivity varying from 80 to 300 times higher than that of bulk Pt. Temperature dependent current-voltage measurements exhibited non-linear behaviour with the non-linearity increasing with decreasing temperature. The conduction mechanism can be explained in terms of a disordered solid with inter-grain tunnelling.
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Postoyalko, V. "The influence of interband states on the characteristics of Schottky barrier diodes." Thesis, University of Leeds, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.354437.
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Pang, Zhengda. "Schottky contacts to indium phosphide and their applications." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/NQ30109.pdf.
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Schwarz, Mike. "Two-dimensional analytical predictive modeling of schottky barrier soi and multi-gate mosfets." Doctoral thesis, Universitat Rovira i Virgili, 2012. http://hdl.handle.net/10803/108995.
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En esta tesis se analiza el comportamiento físico de los principales mecanismos de transporte en dispositivos Schottky barrier (Double-Gate) MOSFET nanométricos, y se presentan nuevos modelos compactos apropiads. Se desarrollaron soluciones analíticas completamente bidimensionales de la electrostàtica de estos dispositivos con ayuda de la técnica de mapeado conforme Schwarz-Christoffel. Basándose en estas soluciones electrostáticas analíticas, se desarrolló un método analítico de cálculo de las corrientes. El modelo se comparó y validó con simulaciones numéricas obtenidas mediante TCAD Sentaurus para longitudes de canal de hasta 22 nm, y con medidas experimentales de dispositivos SB-UTB-MOSFET con segregación de dopantes y longitud de canal de 80 nm. Se obtuvo una muy buena concordancia entre las predicciones del modelo compacto por un lado, y las simulaciones TCAD y medidas experimentales por otro.
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王銘材. "PtSi Schottky barrier IR diode." Thesis, 1988. http://ndltd.ncl.edu.tw/handle/94072522588390831233.
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Chang, Shih Sheng, and 張士陞. "Electronic transport and Schottky barrier." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/44636559529126505225.
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碩士國立彰化師範大學
光電科技研究所
97
Carrier transport mechanisms and a barrier height of Ni contact to p-type GaN (p-GaN) with the structure of a transmission line model (TLM) were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. Excellent agreement between simulated and measured data was obtained when the tunneling component in the transport current was taken into account. In addition, the result of the barrier-height calculation based on the reverse-bias thermionic field emission model for Ni/p-GaN samples with the TLM structures is similar to the result for conventional Ni/p-GaN Schottky diodes. That provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.
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Clifford, Jason Paul. "Colloidal Quantum Dot Schottky Barrier Photodetectors." Thesis, 2008. http://hdl.handle.net/1807/16746.
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Herein, we report the first solution-processed broadband photodetectors to break the past compromise between sensitivity and speed of response. Specifically, we report photodiodes having normalized detectivity (D*) > 1012 Jones and a 3dB bandwidth of > 2.9 MHz. This finding represents a 170,000 fold improvement in response speed over the most sensitive colloidal quantum dot (CQD) photodetector reported1 and a 100,000 fold improvement in sensitivity over the fastest CQD photodetector reported2.
At the outset of this study, sensitive, solution-processed IR photodetectors were severely limited by low response speeds1. Much faster response speeds had been demonstrated by solution-processed photodetectors operating in the visible3, but these devices offered no benefits for extending the spectral sensitivity of silicon. No available solution-processed photodetector combined high sensitivity, high operating speed, and response to illumination across the UV, visible and IR.
We developed a fast, sensitive, solution-processed photodetector based on a photodiode formed by a Schottky barrier to a CQD film. Previous attempts to form sensitive photodetectors based on CQD photodiodes had demonstrated low quantum efficiencies that limited sensitivity4,5.
Efficient, sensitive semiconductor photodiodes are based on two fundamental characteristics: a large built-in potential that separates photogenerated charge carriers and minimizes internal noise generation, and high semiconductor conductivity for efficient collection of photogenerated charge. Schottky barriers to CQD films were developed to provide high, uniform built-in potentials. A multi-step CQD ligand exchange procedure was developed to allow deposition of tightly packed films of CQDs with high mobility and sufficiently well-passivated surfaces to form high-quality metallurgical junctions.
The temporal response of the CQD photodiodes showed separate drift and diffusion components. Combined with detailed measurements of the Schottky barrier, these characteristics provided the physical basis for a numerical model of device operation. Based on this understanding, devices that excluded the slow diffusive component were fabricated, exploiting only the sub-microsecond field-driven transient to achieve MHz response bandwidth.
These devices are the first to combine megahertz-bandwidth, high sensitivity, and spectral-tunability in photodetectors based on semiconducting CQDs. Record performance is achieved through advances in materials and device architecture based on a detailed understanding the physical mechanisms underlying the operation of CQD photodiodes.
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Chen, Yied-Fu, and 陳彥甫. "Study of Schottky Junctions and Schottky Barrier MOSFETs with Nickel Silicide." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/54643610127137716620.
Full textAbstract:
碩士元智大學
電機工程學系
96
By eliminating the implanted Source/Drain junctions, the metallic Schottky barrier MOSFETs become attracting candidates in deep sub-50 nm regime. The objectives of this thesis are to simulate and analyze the Schottky barrier MOSFETs through two-dimensional device simulations, and to develop the dopant segregated Schottky Source/Drain junction with Nickle silicidation. Through this work, it is found that the insertion of the heavily doped segregation layers can effectively modify the Schottky bar-rier to significantly increase the driving on current and to suppress the ambipolar conduction behavior. Furthermore, the key dopant segregated techniques of Ni silicide technology are fabricated, and the effects of the dopant segregation layer on silicide metal-semiconductor contact are ob-served by measurements.
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Yeh, Sheng-Pin, and 葉昇平. "Design and Application of Schottky Barrier MOSFETs." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/87228739301641072419.
Full textAbstract:
博士國立清華大學
電子工程研究所
97
As MOSFETs scale into nanoscale regime, extensively minimizing source/drain depth limits the improvement of driving drain current due to the increased series resistance. By eliminating implanted ultra-shallow junctions, the metallic Schottky Barrier MOSFET (SBMOS) becomes a most attracting candidate in deep sub-50 nm regime. The objective of this dissertation is to explore in depth the design and application of SBMOS devices using two-dimensional numerical simulations for the use of SBMOS in future CMOS technologies. The current-voltage characteristics of SBMOS are highly dependent on Schottky barrier height, source/drain to gate misalignment, and gate-oxide thickness. Ambipolar conduction of SBMOS can be optimized by an appropriate choice of these primary parameters. A dopant segregated layer can efficiently modify the Schottky barriers to suppress the off-state ambipolar conduction and simultaneously to enhance the on-state driving current. However, apparent degradations of ambipolar conduction in SBMOS are observed when a thin gate-insulator or a heavy halo profile is used for scaled short-channel devices. A novel Dual Workfunction Gate architecture is innovated to optimize SBMOS by tailoring Schottky barrier distributions through vertical gate engineering. An optimal SBMOS can be achieved with enhanced driving current, minimized ambipolar conduction and suitable short-channel effect. This study also elucidates the latent noise mechanisms in SBMOS devices. The complex noise problems in SBMOS arise from the particular ambipolar conduction and the additional interface states at metallic source/drain junctions. In addition to the excess noise of conventional MOSFETs, the interface traps at the metallic source/drain are keys to the overall noise characteristics of SBMOS. Most possible noise sources under various operating conditions are summarized herein to provide a comprehensive understanding of how noise potentially limits the practical applications of SBMOS devices.
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Liang, Ji-Ting, and 梁紀庭. "Schottky Barrier Multibit Charge-Trapping Flash Memory." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/26348063641353357830.
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Yu, Hsin-Lung, and 于鑫龍. "Study of Trench MOS Barrier Schottky Rectifier." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/83730016523016465709.
Full textAbstract:
碩士國立臺灣科技大學
電子工程系
98
Improved barrier controlled power Schottky rectifiers are of interest for application in low-voltage switching mode power supplies for integrated circuits. For these applications, it is desirable to have rectifiers with very low forward drop and high switching speed. The forward voltage drop of a Schottky rectifier can be reduced by decreasing the Schottky barrier height. Unfortunately, a low barrier height results in a severe increase in leakage current and reduction in maximum operating temperature. Further, Schottky power rectifiers fabricated with barrier heights of less than 0.7 eV have been found to exhibit extremely soft breakdown characteristics which make them prone to failure. So there’re several Schottky structures to improve the conventional Schottky disadvantages such as JBS (Junction Barrier Schottky) rectifier and TMBS (Trench MOS Barrier Schottky) rectifier. However, JBS structure is difficult to scale down the device feature size to achieve forward drops below 250mV due to the dead-zone presented by P+ junction regions and the breakdown susceptibility of very shallow (<0.3�慆) junctions. Although TMBS structure has improved JBS dead-zone issue by using trench MOS technology, the conventional TMBS rectifier has MOS structure built into whole trench regions but there’s still trench bottom corner electric field crowding effect to restrict the reverse blocking capability. In this paper, a novel trench MOS barrier Schottky (TMBS) rectifier has been proposed by carrying out trench-bottom counter-doping implantation. By additionally implementing a counter-doped region enclosing the trench bottom, the reverse blocking voltage of the conventional TMBS rectifier can be significantly enhanced without considerable degradation of on-state characteristics. The large peak electric field in the corner of trench bottom, which limits the blocking voltage of the conventional TMBS rectifier, can be largely alleviated due to charge compensation. Though the counter-doped region enclosing the trench bottom may partly encroach into the mesa region, no considerable deterioration of on-state characteristics is caused. In this study, a too low-dose trench-bottom implantation cannot provide sufficient charge compensation, and a too high-dose trench-bottom implantation would create a large peak electric field below the trench bottom. As a result, a proper trench-bottom implantation may be employed to significantly enhance the blocking voltage without considerable degradation of on-state characteristics.
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Chang, Wei, and 章緯. "Schottky Barrier Silicon Nanowire SONOS Flash Memory." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/02018208850287818702.
Full textAbstract:
博士國立清華大學
電子工程研究所
100
Silicon nanowire has attracted a growing interest from semiconductor industry to replace the bulk Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory in future cell scaling, system-on-chip, system-on-panel, and 3D integration applications. However, a relatively high gate voltage is still required for the conventional nanowire SONOS cell during programming or erasing. Aggressive scaling of operation voltage is much preferred to improve cell speed, energy dissipation, periphery circuitry, and cell reliability for the use in practical embedded or mobile applications. This dissertation presents an innovative Schottky barrier Silicon nanowire charge-trapping SONOS Flash memory cell, and performs a thorough study of its operations for use in future nonvolatile memory cell. Real silicon cell fabrications and in-depth measurements are performed to examine the programming, erasing and reading operations of this new memory cell incorporated with thermal retention and cycling reliability characterizations. By applying Schottky barrier source/drain to enhance electrical field in silicon gate-all-around nanowire, the nonvolatile Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory can operate at a gate voltage of 5 to 7V for programming, and -7 to -9V for erasing through Fowler-Nordheim tunneling. The larger gate voltage is, the faster programming/erasing speed and wider threshold-voltage shift are attained. Importantly, the Schottky barrier nanowire SONOS cells exhibit superior 100K cycling endurance and high-temperature retention without any damages from metallic silicidation process or field-enhanced tunneling. In addition, a localized programing and erasing scheme can be utilized to enhance the threshold voltage shift window in this Schottky barrier nanowire SONOS cell. The breakthrough in low-voltage programming and erasing operations with simple silicidation process make the Schottky barrier silicon nanowire SONOS cell very promising in future 3D integration, system-on-chip, and system-on-panel applications.
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Shia, Ruei-Kai, and 夏瑞鍇. "Study of Short Recessed Channel Schottky Barrier MOSFETs." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/92204154405515488122.
Full textAbstract:
碩士元智大學
電機工程學系
99
This thesis explores the current transport and device scaling of the recessed channel dopant segregated Schottky barrier MOSFETs (RC DS SBMOS). It also discusses an asymmetric source/drain structure of the RC DS SBMOS device to demonstrate a high on-current and suppress short-channel effect. The use of the dopant segregation layer reduces the parasitic resistance, caused by the recessed channel, to have a higher on-current of the recessed channel Schottky barrier MOSFETs. The recessed channel structure has a separate source, channel and drain region. The separately isolated drain region relieves the penetration of drain-side electrical field to have a suppressed short-channel effect. A halo implant profile helps to improve the scalability of Schottky barrier MOSFETs further. The asymmetric drain recessed structure enhances the driving on-current, and simultaneously, minimizes the short-channel effect to have an optimized RC DS SBMOS device for the use in future CMOS applications.
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Luo, Yan-Xiang, and 羅彥翔. "Design and Simulation of Schottky Barrier Flash Memory." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/97333038717092396795.
Full textAbstract:
碩士元智大學
電機工程學系
97
The standard floating gate Flash cells is the mainstream nonvolatile semiconductor memory. The challenges to future scaling are imposed by the non-scalable tunneling oxide and high voltage to provide sufficient drain-side hot electron injections. This study uses two-dimensional device simulator to present a novel Schottky barrier source/drain Flash memory cell with promising source-side hot electron injection. Rather than conventional cell, the unique Schottky barrier formed at source/channel interface significantly promotes the amount of source-side hot electrons to provide high injection efficiency at considerably low voltages without compromising between gate and drain biases. An optimal design of Schottky Barrier Flash cell is achieved using the dopant segregation layer, silicon-on-insulator substrate and dual workfunction gate with enhanced gate current.
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Liu, Yuan-Heng, and 劉原亨. "Fabrication of 4H-SiC Junction Barrier Schottky Diode." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/77937083865545343484.
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Barlow, Mark D. "Metal-semiconductor contacts for schottky diode fabrication /." 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1198114671.
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Huang, Bo-Jhung, and 黃柏彰. "The Fabrication of Quasi Vertical Schottky Diode and Junction Barrier Schottky Diode GaN on Sapphire." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/84452802013149827757.
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Lin, Shin-Wei, and 林仕尉. "Conductive transparent oxide applied to GaN Schottky barrier diodes." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/04735008512118252762.
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Chien-ChunChen and 陳健群. "AlGaN-based Schottky Barrier Ultraviolet Photodetector with Micropillar Structures." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/71019778652652679160.
Full textAbstract:
碩士國立成功大學
光電科學與工程研究所
98
In this study, we demomstrated a single AlGaN layer with two different Al contents on the GaN μ-pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelength of the AlGaN layer were at 340 and 320nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodector were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar template. The three steps of response occurred at about 326, 346, and 356nm with responsivities of 1.1×10-2, 5.9×10-3, and 4.04×10-3 A/W, respectively. However, the pits formation might arise from the lattice mismatch and the higher strain of AlGaN layer on sidewall of GaN pillar, resulting in the larger leakage current. In order to restrain the leakage current and improve the performances, we treated out the surface on sample with (NH4) 2Sx .We found that after (NH4) 2Sx treatment might result in a decrease in the carrier concentration and optical bandgap of ITO film. The effects of an (NH4) 2Sx treatment could change the properties of ITO films and form sulfide passivation for the enhancement of the schottky barrier height.
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連敏宏. "The Application of Schottky-Barrier MOSFET with Ytterbium Silicide." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/83418020064988655231.
Full textAbstract:
碩士國立交通大學
光電系統研究所
100
Ytterbium silicide was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, which is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the LaAlO3 (LAO) gate dielectric, and TaN metal gate. The YbSi2-x silicided N-SSDT is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other metal silicide Schottky junctions. This thesis explores two low temperature technological developments related to future n-MOSFETs using silicon, germanium, or III-V semiconductors as channel materials. It was found that Yb/p-Si Schottky contact with rapid thermal annealing (RTA) at 600℃ for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with p-Si. These properties are suitable for source/drain (S/D) formation in n-MOSFETs. MOS capacitors were fabricated by dual E-gun deposition of LaAlO3 dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved C-V and J-V characteristics with equivalent-oxide-thickness (EOT) = 1.48nm, gate leakage currents 3.18×10-2 A/cm2 for 400℃ RTA treated samples at Vfb-1V were achieved. The Schottky barrier MOSFETs are pitifully failed with various analyses. We hope that these analyses will be useful in the future.