Journal articles on the topic 'Schottky-barrier'
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Zhao, Jian H., Kuang Sheng, and Ramon C. Lebron-Velilla. "SILICON CARBIDE SCHOTTKY BARRIER DIODE." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 821–66. http://dx.doi.org/10.1142/s0129156405003430.
Full textOkino, Hiroyuki, Norifumi Kameshiro, Kumiko Konishi, Naomi Inada, Kazuhiro Mochizuki, Akio Shima, Natsuki Yokoyama, and Renichi Yamada. "Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes." Materials Science Forum 740-742 (January 2013): 881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.881.
Full textOnishchuk, D. A., P. S. Parfenov, A. Dubavik, and A. P. Litvin. "The Influence of the Schottky Barrier at the Metal/PbS NCs Junction on the Charge Transport Properties-=SUP=-*-=/SUP=-." Журнал технической физики 128, no. 8 (2020): 1194. http://dx.doi.org/10.21883/os.2020.08.49725.1002-20.
Full textWu, Shuo-En, and Ya-Ping Hsieh. "Increasing The Efficiency Of Graphene-Based Schottky-Barrier Devices." Advanced Materials Letters 10, no. 2 (December 19, 2018): 132–35. http://dx.doi.org/10.5185/amlett.2019.2183.
Full textHorng-Chih Lin, Kuan-Lin Yeh, Tiao-Yuan Huang, Ruo-Gu Huang, and S. M. Sze. "Ambipolar Schottky-barrier TFTs." IEEE Transactions on Electron Devices 49, no. 2 (2002): 264–70. http://dx.doi.org/10.1109/16.981216.
Full textPenney, T., and W. A. Thompson. "Schottky barrier probe tunneling." Journal of Magnetism and Magnetic Materials 52, no. 1-4 (October 1985): 152–56. http://dx.doi.org/10.1016/0304-8853(85)90242-2.
Full textChang, S. J., S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen, S. L. Wu, and B. R. Huang. "GaN Schottky Barrier Photodetectors." IEEE Sensors Journal 10, no. 10 (October 2010): 1609–14. http://dx.doi.org/10.1109/jsen.2010.2045889.
Full textPatel, S. S. "Al–SnSe2 Schottky Barrier." Crystal Research and Technology 26, no. 7 (1991): 911–16. http://dx.doi.org/10.1002/crat.2170260719.
Full textSen, Sudipta, and Nabin Baran Manik. "Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles." Advanced Materials Research 1167 (November 9, 2021): 35–42. http://dx.doi.org/10.4028/www.scientific.net/amr.1167.35.
Full textMin, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.
Full textNeetika, Ramesh Chandra, and V. K. Malik. "Temperature Dependent Current-Voltage Characteristics of Pt/MoS2 Schottky Junction." MRS Advances 4, no. 38-39 (2019): 2127–34. http://dx.doi.org/10.1557/adv.2019.283.
Full textZaman, Muhammad Yousuf, Denis Perrone, Sergio Ferrero, Luciano Scaltrito, and Marco Naretto. "Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode." Materials Science Forum 711 (January 2012): 188–92. http://dx.doi.org/10.4028/www.scientific.net/msf.711.188.
Full textLabed, Madani, Nouredine Sengouga, and You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer." Nanomaterials 12, no. 5 (March 1, 2022): 827. http://dx.doi.org/10.3390/nano12050827.
Full textNaretto, Marco, Denis Perrone, Sergio Ferrero, and Luciano Scaltrito. "Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC." Materials Science Forum 645-648 (April 2010): 227–30. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.227.
Full textOh, Sung Kwen, Meng Li, Hong Sik Shin, and Hi Deok Lee. "ErGermanide Schottky Junctionfor n-Type Schottky Barrier Ge MOSFET." Advanced Materials Research 699 (May 2013): 590–95. http://dx.doi.org/10.4028/www.scientific.net/amr.699.590.
Full textEglash, S. J., N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, and D. M. Collins. "Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights." Journal of Applied Physics 61, no. 11 (June 1987): 5159–69. http://dx.doi.org/10.1063/1.338290.
Full textZhang, Xiaohui, Kang Liu, Benjian Liu, Bing Dai, Yumin Zhang, and Jiaqi Zhu. "Phenomenon of photo-regulation on gold/diamond Schottky barriers and its detector applications." Applied Physics Letters 122, no. 6 (February 6, 2023): 062106. http://dx.doi.org/10.1063/5.0131898.
Full textAoyama, Kohei, Kohei Ueno, Atsushi Kobayashi, and Hiroshi Fujioka. "Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K." Applied Physics Letters 121, no. 23 (December 5, 2022): 232103. http://dx.doi.org/10.1063/5.0123299.
Full textPascu, Razvan, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Marian Badila, Ion Rusu, and Florea Craciunoiu. "Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor." Materials Science Forum 821-823 (June 2015): 436–39. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.436.
Full textAketa, Masatoshi, Yuta Yokotsuji, Mineo Miura, and Takashi Nakamura. "4H-SiC Trench Structure Schottky Diodes." Materials Science Forum 717-720 (May 2012): 933–36. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.933.
Full textIvon, A. I. "Volt-ampere characteristic of the double Schottky barrier." Journal of Physics and Electronics 29, no. 1 (September 7, 2021): 91–98. http://dx.doi.org/10.15421/332115.
Full textLiang, Fangzhou, Wen Chen, Meixin Feng, Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Qibao Wu, and Hui Yang. "Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate." Photonics 8, no. 2 (January 23, 2021): 28. http://dx.doi.org/10.3390/photonics8020028.
Full textLi, Qingling, Tao Zhu, Jialing Li, and Hailiang Yan. "Optimization of Schottky-contact process on 4H-SiC Junction Barrier Schottky (JBS) Diodes." Journal of Physics: Conference Series 2083, no. 2 (November 1, 2021): 022090. http://dx.doi.org/10.1088/1742-6596/2083/2/022090.
Full textSciuto, Antonella, Fabrizio Roccaforte, Salvatore di Franco, and Vito Raineri. "Schottky Barrier Lowering in 4H-SiC Schottky UV Detector." Materials Science Forum 600-603 (September 2008): 1215–18. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1215.
Full textChang, Y., Y. Hwu, J. Hansen, F. Zanini, and G. Margaritondo. "Nature of the Schottky term in the Schottky barrier." Physical Review Letters 63, no. 17 (October 23, 1989): 1845–48. http://dx.doi.org/10.1103/physrevlett.63.1845.
Full textKikuchi, Akira. "Barrier Height of Titanium Silicide Schottky Barrier Diodes." Japanese Journal of Applied Physics 25, Part 2, No. 11 (November 20, 1986): L894—L895. http://dx.doi.org/10.1143/jjap.25.l894.
Full textHafez, Alaa El-Din Sayed, and Mohamed Abd El-Latif. "Optimum Barrier Height for SiC Schottky Barrier Diode." ISRN Electronics 2013 (July 31, 2013): 1–5. http://dx.doi.org/10.1155/2013/528094.
Full textKIMATA, Masafumi. "Schottky-Barrier Infrared Image Sensor." Journal of the Spectroscopical Society of Japan 40, no. 6 (1991): 367–68. http://dx.doi.org/10.5111/bunkou.40.367.
Full textLutzer, B., M. Hummer, S. Simsek, C. Zimmermann, A. Amsuess, H. Hutter, H. Detz, M. Stoeger-Pollach, O. Bethge, and E. Bertagnolli. "Rhodium Germanide Schottky Barrier Contacts." ECS Journal of Solid State Science and Technology 4, no. 9 (2015): P387—P392. http://dx.doi.org/10.1149/2.0181509jss.
Full textChu, P., C. L. Lin, and H. H. Wieder. "Schottky-barrier height of In0.43Al0.57As." Electronics Letters 22, no. 17 (1986): 890. http://dx.doi.org/10.1049/el:19860607.
Full textHigashiwaki, Masataka, Kohei Sasaki, Hisashi Murakami, Yoshinao Kumagai, and Akito Kuramata. "Gallium Oxide Schottky Barrier Diodes." IEEJ Transactions on Electronics, Information and Systems 136, no. 4 (2016): 479–83. http://dx.doi.org/10.1541/ieejeiss.136.479.
Full textSabui, Gourab, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, and Z. John Shen. "GaN Nanowire Schottky Barrier Diodes." IEEE Transactions on Electron Devices 64, no. 5 (May 2017): 2283–90. http://dx.doi.org/10.1109/ted.2017.2679727.
Full textXu, Yong, Huabin Sun, and Yong-Young Noh. "Schottky Barrier in Organic Transistors." IEEE Transactions on Electron Devices 64, no. 5 (May 2017): 1932–43. http://dx.doi.org/10.1109/ted.2017.2650216.
Full textSpicer, William E., and Renyu Cao. "Schottky-Barrier Formation and Metallicity." Physical Review Letters 62, no. 5 (January 30, 1989): 605. http://dx.doi.org/10.1103/physrevlett.62.605.
Full textWerner, Jürgen H., and Herbert H. Güttler. "Barrier inhomogeneities at Schottky contacts." Journal of Applied Physics 69, no. 3 (February 1991): 1522–33. http://dx.doi.org/10.1063/1.347243.
Full textPaosawatyanyong, Boonchoat, K. Honglertsakul, and D. K. Reinhard. "DLC-Film Schottky Barrier Diodes." Solid State Phenomena 107 (October 2005): 75–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.75.
Full textVigué, F., E. Tournié, and J. P. Faurie. "ZnSe-based Schottky barrier photodetectors." Electronics Letters 36, no. 4 (2000): 352. http://dx.doi.org/10.1049/el:20000282.
Full textBatra, Inder P., and S. Ciraci. "Metallization and Schottky-barrier formation." Physical Review B 33, no. 6 (March 15, 1986): 4312–14. http://dx.doi.org/10.1103/physrevb.33.4312.
Full textHernandez, L., and C. Pelosi. "InGaAs/InP schottky barrier diode." Physica Status Solidi (a) 113, no. 2 (June 16, 1989): 677–84. http://dx.doi.org/10.1002/pssa.2211130250.
Full textYim, Chanyoung, Niall McEvoy, Ehsan Rezvani, Shishir Kumar, and Georg S. Duesberg. "Carbon-Silicon Schottky Barrier Diodes." Small 8, no. 9 (March 5, 2012): 1360–64. http://dx.doi.org/10.1002/smll.201101996.
Full textYe, Fan, Rui-Tuo Hong, Cang-Shuang He, Zi-Cheng Zhao, Yi-Zhu Xie, Dong-Ping Zhang, Fan Wang, Jian-Wei Li, and Xing-Min Cai. "ZnSnN2 Schottky barrier solar cells." Materials Science and Engineering: B 300 (February 2024): 117097. http://dx.doi.org/10.1016/j.mseb.2023.117097.
Full textNakahara, Shota, Takahiro Morita, Haruka Omachi, Masafumi Inaba, Michihiko Nakano, and Junya Suehiro. "Comparison between modulations of contact and channel potential in nitrogen dioxide gas response of ambipolar carbon nanotube field-effect transistors." AIP Advances 12, no. 12 (December 1, 2022): 125302. http://dx.doi.org/10.1063/5.0124891.
Full textKhurelbaatar, Zagarzusem, Yeon-Ho Kil, Kyu-Hwan Shim, Hyunjin Cho, Myung-Jong Kim, Sung-Nam Lee, Jae-chan Jeong, Hyobong Hong, and Chel-Jong Choi. "Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode." Superlattices and Microstructures 91 (March 2016): 306–12. http://dx.doi.org/10.1016/j.spmi.2016.01.029.
Full textTeng, Hung-Jin, Yu-Hsuan Chen, Jr-Jie Tsai, Nguyen Dang Chien, Chenhsin Lien, and Chun-Hsing Shih. "Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications." Crystals 10, no. 11 (November 13, 2020): 1036. http://dx.doi.org/10.3390/cryst10111036.
Full textKhan, Maksudur R., Tan Wooi Chuan, Abu Yousuf, M. N. K. Chowdhury, and Chin Kui Cheng. "Schottky barrier and surface plasmonic resonance phenomena towards the photocatalytic reaction: study of their mechanisms to enhance photocatalytic activity." Catalysis Science & Technology 5, no. 5 (2015): 2522–31. http://dx.doi.org/10.1039/c4cy01545b.
Full textPang, Z., P. Mascher, J. G. Simmons, and D. A. Thompson. "Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs." Canadian Journal of Physics 74, S1 (December 1, 1996): 104–7. http://dx.doi.org/10.1139/p96-842.
Full textPatil, Tarkeshwar C. "Ferromagnetic Schottky Contact for GaN Based Spin Devices." WSEAS TRANSACTIONS ON ELECTRONICS 12 (August 2, 2021): 55–60. http://dx.doi.org/10.37394/232017.2021.12.8.
Full textZiko, Mehadi Hasan, Ants Koel, Toomas Rang, and Jana Toompuu. "Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes." Materials Science Forum 1004 (July 2020): 960–72. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.960.
Full textShashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (November 23, 2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.
Full textPerrone, Denis, Sergio Ferrero, Luciano Scaltrito, Marco Naretto, Edvige Celasco, and C. Fabrizio Pirri. "Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations." Materials Science Forum 679-680 (March 2011): 453–56. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.453.
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