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Journal articles on the topic 'Schottky-barrier'

Author: Grafiati

Published: 4 June 2021

Last updated: 21 September 2024

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1

Zhao, Jian H., Kuang Sheng, and Ramon C. Lebron-Velilla. "SILICON CARBIDE SCHOTTKY BARRIER DIODE." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 821–66. http://dx.doi.org/10.1142/s0129156405003430.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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2

Okino, Hiroyuki, Norifumi Kameshiro, Kumiko Konishi, Naomi Inada, Kazuhiro Mochizuki, Akio Shima, Natsuki Yokoyama, and Renichi Yamada. "Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes." Materials Science Forum 740-742 (January 2013): 881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.881.

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The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

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3

Onishchuk, D. A., P. S. Parfenov, A. Dubavik, and A. P. Litvin. "The Influence of the Schottky Barrier at the Metal/PbS NCs Junction on the Charge Transport Properties-=SUP=-*-=/SUP=-." Журнал технической физики 128, no. 8 (2020): 1194. http://dx.doi.org/10.21883/os.2020.08.49725.1002-20.

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The effect of the Schottky barrier height changes on the metal/EDT-treated (1,2-ethanedithiol) PbS nanocrystals film interface is considered. Also, the influence of shunts on the J-V characteristic and the Schottky barrier height is demonstrated, as well, the effect of silver oxide layer on the charge accumulation and tunneling. It is shown that the gold electrodes provide more stable results even when the Schottky barrier is formed, while the silver electrode provides more current. Keywords: semiconductor nanocrystals, Schottky barrier, charge carriers transport, thin films.

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4

Wu, Shuo-En, and Ya-Ping Hsieh. "Increasing The Efficiency Of Graphene-Based Schottky-Barrier Devices." Advanced Materials Letters 10, no. 2 (December 19, 2018): 132–35. http://dx.doi.org/10.5185/amlett.2019.2183.

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5

Horng-Chih Lin, Kuan-Lin Yeh, Tiao-Yuan Huang, Ruo-Gu Huang, and S. M. Sze. "Ambipolar Schottky-barrier TFTs." IEEE Transactions on Electron Devices 49, no. 2 (2002): 264–70. http://dx.doi.org/10.1109/16.981216.

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6

Penney, T., and W. A. Thompson. "Schottky barrier probe tunneling." Journal of Magnetism and Magnetic Materials 52, no. 1-4 (October 1985): 152–56. http://dx.doi.org/10.1016/0304-8853(85)90242-2.

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7

Chang, S. J., S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen, S. L. Wu, and B. R. Huang. "GaN Schottky Barrier Photodetectors." IEEE Sensors Journal 10, no. 10 (October 2010): 1609–14. http://dx.doi.org/10.1109/jsen.2010.2045889.

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8

Patel, S. S. "Al–SnSe2 Schottky Barrier." Crystal Research and Technology 26, no. 7 (1991): 911–16. http://dx.doi.org/10.1002/crat.2170260719.

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9

Sen, Sudipta, and Nabin Baran Manik. "Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles." Advanced Materials Research 1167 (November 9, 2021): 35–42. http://dx.doi.org/10.4028/www.scientific.net/amr.1167.35.

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Characterization of electrical parameters of Copper Phthalocyanine dye has been done in the present work. In the context of electrical parameters, the Schottky barrier and ideality factor of the organic device has been measured and the effects of fullerene nanoparticles on these parameters have been studied. Analysis of electrical parameters has been done by the current-voltage characteristics of the device. The influence of fullerene nanoparticles lessens the Schottky barrier to 0.71 eV from 0.75 eV. The current flow is assumed to be injection limited as the Schottky barrier is greater than 0.3 eV - 0.4 eV. The Schottky barrier is also estimated by the Norde method. Norde's method shows lessening of barrier height from 0.70 eV to 0.65 eV under the influence of fullerene nanoparticles. The measured ideality factor value reduces from 3.787 to 1.495 in presence of fullerene nanoparticles. The charge injection mechanism at metal-organic contact gets influenced by the interfacial Schottky barrier height. Decrease in both Schottky barrier and ideality factor attribute to the increase in charge flow and it allows a reduction in the device’s transition voltage from 2.5 V to 1.0 V.

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10

Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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11

Neetika, Ramesh Chandra, and V. K. Malik. "Temperature Dependent Current-Voltage Characteristics of Pt/MoS2 Schottky Junction." MRS Advances 4, no. 38-39 (2019): 2127–34. http://dx.doi.org/10.1557/adv.2019.283.

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AbstractMolybdenum disulphide (MoS2) is one of the transition metal dichalcogenide (TMD) materials which has attracted attention due to its various interesting properties. MoS2 is very promising for electronic and optoelectronic devices due to its indirect band gap (∼1.2 eV) for few layer and direct band gap (∼1.8 eV) for monolayer MoS2. In MoS2 based Schottky devices, Schottky barrier height depends on the thickness of MoS2 because of its tunable electronic properties. Here, we have used DC sputtering technique to fabricate metal-semiconductor junction of MoS2 with platinum (Pt) metal contacts. In this work, MoS2 thin film (∼10 nm) was deposited on p-Silicon (111) using DC sputtering technique at optimized parameters. Schottky metallization of Pt metal (contact area ∼ 0.785x10-2 cm2) was also done using DC sputtering. Current-voltage (I-V) characteristics of the Pt/MoS2 Schottky junction have been investigated in the temperature range 80-350K. Forward I-V characteristics of Pt/MoS2 junction are analysed to calculate different Schottky parameters. Schottky barrier height increases and ideality factor decreases on increasing the temperature from 80-350K. The I-V-T measurements suggest the presence of local inhomogeneities at the Pt/MoS2 junction. Schottky barrier inhomogeneities occur in case of rough interface. In such cases, the Schottky barrier height does not remain constant and vary locally. Current transport through the Schottky junction is a thermally activated process. As temperature increases, more and more electrons overcome the spatially inhomogeneous barrier height. As a result, the ideality factor becomes close to unity and apparent barrier height increases due to increase in temperature.

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12

Zaman, Muhammad Yousuf, Denis Perrone, Sergio Ferrero, Luciano Scaltrito, and Marco Naretto. "Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode." Materials Science Forum 711 (January 2012): 188–92. http://dx.doi.org/10.4028/www.scientific.net/msf.711.188.

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Forward current-voltage characteristics of a medium sized (3.05mm2)Mo/4H-SiC (molyb-denum on silicon carbide) Schottky diode|fabricated for high power applications | are analysedwithin a temperature range of 125-450 K. Accurate theoretical modeling is carried out using Tung'smodel in which it is considered that numerous low barrier nanometer size patches, present in uniformhigh barrier, are responsible for the inhomogeneities in the Schottky barrier of SiC-based electronicdevices. A significant difference is observed between the effective area involved in the current trans-port and the geometric area of the Schottky contact along with a dependence of the ideality factor andhe barrier height on temperature. The obtained values of uniform Schottky barrier and Richardson'sconstant are seen to be in accordance with previous works. It is concluded that the above mentionedmodel can be used to describe the electrical behaviour of Mo/4H-SiC Schottky diodes.

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13

Labed, Madani, Nouredine Sengouga, and You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer." Nanomaterials 12, no. 5 (March 1, 2022): 827. http://dx.doi.org/10.3390/nano12050827.

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Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, and in the series resistance (RS), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (JS) increased from 1.26×10−11 to 8.3×10−7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky–Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

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14

Naretto, Marco, Denis Perrone, Sergio Ferrero, and Luciano Scaltrito. "Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC." Materials Science Forum 645-648 (April 2010): 227–30. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.227.

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In this work we present the results of electrical characterization of 4H-SiC power Schottky diodes with a Mo metal barrier for high power applications. A comparison between different Schottky Barrier Height (SBH) evaluation methods (capacitance-voltage and current-voltage measurements), together with the comparison with other authors’ works, indicates that thermionic current theory is the dominant transport mechanism across the barrier from room temperature (RT) to 450K, while at T < 300K some anomalies in J-V curves appear and SBH and ideality factor significantly change their values. These deviations from ideality are attributed to Schottky barrier inhomogeneities. In particular, a model based on two SBHs seems appropriate to properly describe the electrical behavior of our devices.

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15

Oh, Sung Kwen, Meng Li, Hong Sik Shin, and Hi Deok Lee. "ErGermanide Schottky Junctionfor n-Type Schottky Barrier Ge MOSFET." Advanced Materials Research 699 (May 2013): 590–95. http://dx.doi.org/10.4028/www.scientific.net/amr.699.590.

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In this paper, the electricalcharacteristics of Ergermanideschottkyjunction werestudied for source / drain of n-typeschottky barrier Ge MOSFET.Ergermanideshowed the lowest ideality factor at RTP temperature of 600°C among the applied temperature range. When RTP temperature was increased, barrier height and work function of Ergermanidebecame similar to those of Er2Ge3. From the analysis of the leakage current, it is shown that the Poole-Frenkel barrier lowering was dominant at RTP 600°C and the influence of the Schottky barrier lowering was decreased as RTP temperature increased. The electrical characteristics of Ergermanideare very sensitive to the RTP temperature andclosely related tothe trapsites which are generated by germanidation.

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16

Eglash, S. J., N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, and D. M. Collins. "Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights." Journal of Applied Physics 61, no. 11 (June 1987): 5159–69. http://dx.doi.org/10.1063/1.338290.

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17

Zhang, Xiaohui, Kang Liu, Benjian Liu, Bing Dai, Yumin Zhang, and Jiaqi Zhu. "Phenomenon of photo-regulation on gold/diamond Schottky barriers and its detector applications." Applied Physics Letters 122, no. 6 (February 6, 2023): 062106. http://dx.doi.org/10.1063/5.0131898.

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A thickness asymmetric electrode structure on an oxygen-terminated type IIa diamond was designed and prepared (one electrode was semitransparent to ultraviolet light and the other blocked the transmission of ultraviolet light). This structure exhibited an apparent photo-induced rectification property under irradiation by a deuterium lamp. This is attributed to the mechanism by which the light penetrating the electrode reduces the metal–diamond contact barrier. Furthermore, we developed a light-modulated Schottky barrier diamond photodetector based on this mechanism. Solar-blind light can lower the Schottky barrier height in situ in the presence of light, which significantly enhances the photocurrent. However, the Schottky barrier is not reduced by light regulation when there is no light; therefore, the low dark current of the detector is still guaranteed. Compared with the non-photo-regulated Schottky barrier detector, the photo-regulated Schottky barrier detector exhibits a 128% increase in responsivity at 220 nm under a 1.6 V/ μm bias. For such an obvious difference in detection performance, this mechanism has rarely been a focus of studies on diamond detectors. In addition to diamond detectors, light-modulated barrier technology can also be applied to other fields related to the diamond surface potential, such as color center control and Schottky diodes; it can also be used to control or evaluate device performance.

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18

Aoyama, Kohei, Kohei Ueno, Atsushi Kobayashi, and Hiroshi Fujioka. "Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K." Applied Physics Letters 121, no. 23 (December 5, 2022): 232103. http://dx.doi.org/10.1063/5.0123299.

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We have fabricated vertical p-type gallium nitride (GaN) Schottky barrier diodes (SBDs) using various Schottky metals such as Pt, Pd, Ni, Mo, Ti, and Al. Current–voltage characteristics revealed that Schottky barrier heights determined using a thermionic emission (TE) model (ϕBTE) were ranged between 1.90 eV for Pt and 2.56 eV for Mo depending on the work function ( ϕm) of the Schottky metals. Despite their low ϕm, Ti and Al gave unusually small ϕBTE probably due to the interfacial reaction between metal and p-type GaN. We also found that Mo/p-GaN SBDs exhibited a clear rectifying property even at 800 K, and the thermionic emission diffusion (TED) model explained well their high-temperature I–V characteristics. Furthermore, the temperature variation of Schottky barrier heights determined using a TED model (ϕBTED) almost agrees with half of the temperature variation of the bandgap energy. These findings will be helpful for the application of p-type GaN Schottky interfaces to high-power and high-temperature electronics.

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19

Pascu, Razvan, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Marian Badila, Ion Rusu, and Florea Craciunoiu. "Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor." Materials Science Forum 821-823 (June 2015): 436–39. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.436.

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The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

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20

Aketa, Masatoshi, Yuta Yokotsuji, Mineo Miura, and Takashi Nakamura. "4H-SiC Trench Structure Schottky Diodes." Materials Science Forum 717-720 (May 2012): 933–36. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.933.

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This paper presents three different structures of Schottky diodes that were fabricated with low Schottky barrier heights. To reduce the forward voltage drop, the introduction of a lower Schttoky barrier is necessary. One of key issues associated with diodes having a low Schottky barrier height and a planar structure is an excessively high leakage current. By introducing the novel trench structure, the leakage current was reduced to a reasonable level. Furthermore it was confirmed that they have minimal switching time during turn-off and high avalanche capability. Thus trench structure Schottky diodes are able to reduce not only switching losses but also conductive losses and demonstrate sufficient robustness.

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21

Ivon, A. I. "Volt-ampere characteristic of the double Schottky barrier." Journal of Physics and Electronics 29, no. 1 (September 7, 2021): 91–98. http://dx.doi.org/10.15421/332115.

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The volt-ampere characteristic (I-V characteristic) of the double Schottky barrier located in the contact region of ZnO grains of zinc oxide based varistor ceramics is calculated using the mechanism of the above-barrier electron emission. I-V characteristic is symmetric to the polarity of the voltage U. At U > 2kBT/e (kB is the Boltzmann constant, T is the absolute temperature, e is electron charge) the electric current is saturated. The contact of ZnO grains with a double Schottky barrier behaves like an electrical circuit consisting of two oppositely connected Schottky diodes. A small maximum possible decrease in the height of the double Schottky barrier in an electric field ~ 0.7kBT ≈ 0.018 eV does not allow explaining the high nonlinearity of I – V characteristic of varistor materials by the above-barrier electron emission. The most probable cause of nonlinearity is the tunnel emission of electrons and impact ionization.

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22

Liang, Fangzhou, Wen Chen, Meixin Feng, Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Qibao Wu, and Hui Yang. "Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate." Photonics 8, no. 2 (January 23, 2021): 28. http://dx.doi.org/10.3390/photonics8020028.

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GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the GaN-on-Si Schottky barrier ultraviolet photodetector was studied. It was found that light Si doping in the absorption layer can significantly increase the responsivity under reverse bias, which might be attributed to the persistent photoconductivity that originates from the lowering of the Schottky barrier height. In addition, the devices with unintentionally doped GaN demonstrated a relatively high-speed photo response. We briefly studied the mechanism of changes in Schottky barrier, dark current and the characteristic of response time.

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23

Li, Qingling, Tao Zhu, Jialing Li, and Hailiang Yan. "Optimization of Schottky-contact process on 4H-SiC Junction Barrier Schottky (JBS) Diodes." Journal of Physics: Conference Series 2083, no. 2 (November 1, 2021): 022090. http://dx.doi.org/10.1088/1742-6596/2083/2/022090.

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Abstract SiC Junction Barrier Schottky (JBS) Rectifier is a kind of unipolar power diode with low threshold voltage and high reverse blocking voltage. And the Schottky barrier Φ BN is a main technology parameter, which could greatly affect the forward conduction power and reverse leakage current in the JBS rectifiers. Therefore, it is necessary to balance the influence of Φ BN on the electrical characteristics of JBS rectifiers. In this paper, physical properties at the metal-semiconductor at the Schottky-contact could be optimized by the improvement of Schottky-contact process. And this optimization could significantly decrease Φ BN to reduce the on-state voltage drop V F and minimize negative impact on its reverse characteristics. After the completion of Silicon carbide JBS diodes, the static parameter electrical test was carried out on the wafer by using Keysight B1505A Power Device Analyzer/Curve Tracer. The test results show that the Schottky barrier height Φ BN of JBS Schottky rectifier manufactured by the modified Schottky foundation technology decreased from 1.19eV to 0.99eV and I R increased from 1.08μA to 3.73μA (reverse blocking voltage V R=1200V). It indicated that the power consumption of Schottky barrier junction in JBS rectifiers could be significantly reduced by about 25%, and I R could effectively be limited to less than 10μA.

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24

Sciuto, Antonella, Fabrizio Roccaforte, Salvatore di Franco, and Vito Raineri. "Schottky Barrier Lowering in 4H-SiC Schottky UV Detector." Materials Science Forum 600-603 (September 2008): 1215–18. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1215.

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The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in the presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent is observed and correlated with the presence of the oxide and with the charge traps at the semiconductor/oxide interface. Photo-thermally stimulated current measurements evidenced that interface charge accumulation is optically promoted. Rise and fall photo-current measurements provided the time parameter of the trapping phenomenon.

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25

Chang, Y., Y. Hwu, J. Hansen, F. Zanini, and G. Margaritondo. "Nature of the Schottky term in the Schottky barrier." Physical Review Letters 63, no. 17 (October 23, 1989): 1845–48. http://dx.doi.org/10.1103/physrevlett.63.1845.

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26

Kikuchi, Akira. "Barrier Height of Titanium Silicide Schottky Barrier Diodes." Japanese Journal of Applied Physics 25, Part 2, No. 11 (November 20, 1986): L894—L895. http://dx.doi.org/10.1143/jjap.25.l894.

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27

Hafez, Alaa El-Din Sayed, and Mohamed Abd El-Latif. "Optimum Barrier Height for SiC Schottky Barrier Diode." ISRN Electronics 2013 (July 31, 2013): 1–5. http://dx.doi.org/10.1155/2013/528094.

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The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been introduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across the metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation of any semiconductor device. 4H-SiC is used as a semiconductor material for its good electrical characteristics with high-power semiconductor devices applications. Six physical parameters are considered during the optimization process, that is, device metal, mobile charge density, fixed oxide charge density, interface trapped charge density, oxide thickness, and voltage drop across the metal-semiconductor contact. The optimization process was performed using a MATLAB program. The results show that the SBD barrier height has been optimized to achieve a maximum or minimum barrier height across the contact, in addition to the ability of controlling the physical parameters to adjust the device barrier height.

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28

KIMATA, Masafumi. "Schottky-Barrier Infrared Image Sensor." Journal of the Spectroscopical Society of Japan 40, no. 6 (1991): 367–68. http://dx.doi.org/10.5111/bunkou.40.367.

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29

Lutzer, B., M. Hummer, S. Simsek, C. Zimmermann, A. Amsuess, H. Hutter, H. Detz, M. Stoeger-Pollach, O. Bethge, and E. Bertagnolli. "Rhodium Germanide Schottky Barrier Contacts." ECS Journal of Solid State Science and Technology 4, no. 9 (2015): P387—P392. http://dx.doi.org/10.1149/2.0181509jss.

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30

Chu, P., C. L. Lin, and H. H. Wieder. "Schottky-barrier height of In0.43Al0.57As." Electronics Letters 22, no. 17 (1986): 890. http://dx.doi.org/10.1049/el:19860607.

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31

Higashiwaki, Masataka, Kohei Sasaki, Hisashi Murakami, Yoshinao Kumagai, and Akito Kuramata. "Gallium Oxide Schottky Barrier Diodes." IEEJ Transactions on Electronics, Information and Systems 136, no. 4 (2016): 479–83. http://dx.doi.org/10.1541/ieejeiss.136.479.

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32

Sabui, Gourab, Vitaly Z. Zubialevich, Mary White, Pietro Pampili, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, and Z. John Shen. "GaN Nanowire Schottky Barrier Diodes." IEEE Transactions on Electron Devices 64, no. 5 (May 2017): 2283–90. http://dx.doi.org/10.1109/ted.2017.2679727.

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33

Xu, Yong, Huabin Sun, and Yong-Young Noh. "Schottky Barrier in Organic Transistors." IEEE Transactions on Electron Devices 64, no. 5 (May 2017): 1932–43. http://dx.doi.org/10.1109/ted.2017.2650216.

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34

Spicer, William E., and Renyu Cao. "Schottky-Barrier Formation and Metallicity." Physical Review Letters 62, no. 5 (January 30, 1989): 605. http://dx.doi.org/10.1103/physrevlett.62.605.

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35

Werner, Jürgen H., and Herbert H. Güttler. "Barrier inhomogeneities at Schottky contacts." Journal of Applied Physics 69, no. 3 (February 1991): 1522–33. http://dx.doi.org/10.1063/1.347243.

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Paosawatyanyong, Boonchoat, K. Honglertsakul, and D. K. Reinhard. "DLC-Film Schottky Barrier Diodes." Solid State Phenomena 107 (October 2005): 75–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.107.75.

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A microwave plasma reactor (MPR) is constructed as a facility for the plasma assisted chemical vapor deposition (PACVD) process. The reactor is a mode-adjustable resonance cavity of cylindrical shape. A 2.45 GHz microwave generator is used to ignite the plasma inside the lengthadjustable cavity. The diamond-like carbon (DLC) thin film depositions onto the silicon substrates are carried out using H2–CH4 discharge. The Schottky barrier diodes (SBD) are then formed on to the DLC films. The responses of DLC-SBD to DC and time varying signals have been studied as a function of frequency. The frequency dependent response results are compared to the computer models, which includes as input parameters the bulk series resistance, the capacitance associated with the bulk material between the space-charge layer and the ohmic contact, the space-charge layer capacitance, and the diode dynamic resistance.

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37

Vigué, F., E. Tournié, and J. P. Faurie. "ZnSe-based Schottky barrier photodetectors." Electronics Letters 36, no. 4 (2000): 352. http://dx.doi.org/10.1049/el:20000282.

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38

Batra, Inder P., and S. Ciraci. "Metallization and Schottky-barrier formation." Physical Review B 33, no. 6 (March 15, 1986): 4312–14. http://dx.doi.org/10.1103/physrevb.33.4312.

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39

Hernandez, L., and C. Pelosi. "InGaAs/InP schottky barrier diode." Physica Status Solidi (a) 113, no. 2 (June 16, 1989): 677–84. http://dx.doi.org/10.1002/pssa.2211130250.

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40

Yim, Chanyoung, Niall McEvoy, Ehsan Rezvani, Shishir Kumar, and Georg S. Duesberg. "Carbon-Silicon Schottky Barrier Diodes." Small 8, no. 9 (March 5, 2012): 1360–64. http://dx.doi.org/10.1002/smll.201101996.

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41

Ye, Fan, Rui-Tuo Hong, Cang-Shuang He, Zi-Cheng Zhao, Yi-Zhu Xie, Dong-Ping Zhang, Fan Wang, Jian-Wei Li, and Xing-Min Cai. "ZnSnN2 Schottky barrier solar cells." Materials Science and Engineering: B 300 (February 2024): 117097. http://dx.doi.org/10.1016/j.mseb.2023.117097.

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42

Nakahara, Shota, Takahiro Morita, Haruka Omachi, Masafumi Inaba, Michihiko Nakano, and Junya Suehiro. "Comparison between modulations of contact and channel potential in nitrogen dioxide gas response of ambipolar carbon nanotube field-effect transistors." AIP Advances 12, no. 12 (December 1, 2022): 125302. http://dx.doi.org/10.1063/5.0124891.

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Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation. In CNT-based field-effect transistors (FETs) for gas sensing, both CNT potential modulation in the channels and Schottky barrier height modulation at the CNT/metal electrode contact influence the current properties. However, researchers have not used Schottky barrier height modulation for gas detection. To investigate and compare the effects of Schottky barrier height modulation and CNT channel potential modulation on NO2 gas exposure, we fabricated ambipolar CNT FETs by the dielectrophoretic assembly. We exposed CNT FET gas sensors to N2 gas containing 100-ppb NO2 and observed two different responses in the electric properties: a steady current shift in the positive direction in the hole-conduction region because of the channel potential modulation, and an abrupt decrease in transconductance in the electron-conduction region because of the Schottky barrier modulation. The CNT channels and CNT/metal contact both contributed to the sensor response, and the modulation rate of the Schottky barrier was higher than that of the CNT potential shift in the channel.

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43

Khurelbaatar, Zagarzusem, Yeon-Ho Kil, Kyu-Hwan Shim, Hyunjin Cho, Myung-Jong Kim, Sung-Nam Lee, Jae-chan Jeong, Hyobong Hong, and Chel-Jong Choi. "Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode." Superlattices and Microstructures 91 (March 2016): 306–12. http://dx.doi.org/10.1016/j.spmi.2016.01.029.

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44

Teng, Hung-Jin, Yu-Hsuan Chen, Jr-Jie Tsai, Nguyen Dang Chien, Chenhsin Lien, and Chun-Hsing Shih. "Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications." Crystals 10, no. 11 (November 13, 2020): 1036. http://dx.doi.org/10.3390/cryst10111036.

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This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on source-side injection are considered for properly operating Schottky barrier cells in low-power or high-efficiency applications. A gate voltage of 5 to 9 V with a drain voltage of 1 to 3 V was employed to program the Schottky barrier cells. Both the non-planar double-gate gate structure and scaled dielectric layers effectively improve the source-side programming. When the gate voltage of 5 V was operated, there were roughly two orders of magnitude greater injected gate currents observed in the ONO-scaled double-gate cells. Five successive programming-trapping iterations were employed to consider the coupling of trapped charges and Schottky barriers, examining the differences in physical mechanisms between different design options. The gate structures, dielectric layers, and gate/drain voltages are key factors in designing transverse scaled Schottky barrier charge-trapping cells for low-power and high-efficiency applications.

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Khan, Maksudur R., Tan Wooi Chuan, Abu Yousuf, M. N. K. Chowdhury, and Chin Kui Cheng. "Schottky barrier and surface plasmonic resonance phenomena towards the photocatalytic reaction: study of their mechanisms to enhance photocatalytic activity." Catalysis Science & Technology 5, no. 5 (2015): 2522–31. http://dx.doi.org/10.1039/c4cy01545b.

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The article reviews the mechanism, how Schottky barrier and the SPR phenomena help to improve a photoreaction, focusing on the paradox between the Schottky barrier and SPR in the matter of the way of electron flow in the metal/semiconductor system.

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Pang, Z., P. Mascher, J. G. Simmons, and D. A. Thompson. "Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs." Canadian Journal of Physics 74, S1 (December 1, 1996): 104–7. http://dx.doi.org/10.1139/p96-842.

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In our investigations, Au, Al, Ni, Pt, Ti, and combinations thereof were deposited on InP and InGaAs by e-beam evaporation to form Schottky contacts. The Schottky-barrier heights of these diodes determined by forward I–V and (or) reverse C–V measurements lie between 0.38–0.48 eV. To increase the Schottky-barrier height, a strained GaxIn1−xP layer was inserted between the electrode metal(s) and the semiconductor. This material, which has a band-gap larger than InP, was grown by gas-source molecular beam epitaxy. The Schottky-barrier heights, which generally depend on the gallium fraction, x, and the thickness of the strained GaxIn1−xP layer, increase and are in the range of 0.56–0.65 eV in different contact schemes.

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Patil, Tarkeshwar C. "Ferromagnetic Schottky Contact for GaN Based Spin Devices." WSEAS TRANSACTIONS ON ELECTRONICS 12 (August 2, 2021): 55–60. http://dx.doi.org/10.37394/232017.2021.12.8.

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In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices

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Ziko, Mehadi Hasan, Ants Koel, Toomas Rang, and Jana Toompuu. "Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes." Materials Science Forum 1004 (July 2020): 960–72. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.960.

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The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

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49

Shashikala, B. N., and B. S. Nagabhushana. "Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 04 (November 23, 2021): 399–406. http://dx.doi.org/10.15407/spqeo24.04.399.

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This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

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Perrone, Denis, Sergio Ferrero, Luciano Scaltrito, Marco Naretto, Edvige Celasco, and C. Fabrizio Pirri. "Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations." Materials Science Forum 679-680 (March 2011): 453–56. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.453.

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In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier Schottky diodes (JBS) able to operate at high temperatures, frequencies and power densities with low power losses. Schottky contacts were fabricated using Mo and Mo/Al layers annealed up to 600 °C using a Rapid Thermal Process (RTP). A comparison with previous results obtained with Ni, Ti and Ti/Al layers annealed up to 400 °C is also proposed. The Schottky contacts were characterized by means of standard Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. X-ray Photoelectron Spectroscopy (XPS) analyses were performed in depth profile mode in order to study the structural evolution of the interface Mo/SiC and Al/Mo during annealing treatments. Mo/Al contacts show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts, and they are very promising for Schottky contact fabrication on SBD and JBS.

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