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Journal articles on the topic 'Schottky Junction'

Author: Grafiati

Published: 4 June 2021

Last updated: 10 February 2022

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1

Kaneko, Masao, Hirohito Ueno, and Junichi Nemoto. "Schottky junction/ohmic contact behavior of a nanoporous TiO2 thin film photoanode in contact with redox electrolyte solutions." Beilstein Journal of Nanotechnology 2 (February 28, 2011): 127–34. http://dx.doi.org/10.3762/bjnano.2.15.

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The nature and photoelectrochemical reactivity of nanoporous semiconductor electrodes have attracted a great deal of attention. Nanostructured materials have promising capabilities applicable for the construction of various photonic and electronic devices. In this paper, a mesoporous TiO2 thin film photoanode was soaked in an aqueous methanol solution using an O2-reducing Pt-based cathode in contact with atmospheric air on the back side. It was shown from distinct photocurrents in the cyclic voltammogram (CV) that the nanosurface of the mesoporous n-TiO2 film forms a Schottky junction with water containing a strong electron donor such as methanol. Formation of a Schottky junction (liquid junction) was also proved by Mott–Schottky plots at the mesoporous TiO2 thin film photoanode, and the thickness of the space charge layer was estimated to be very thin, i.e., only 3.1 nm at −0.1 V vs Ag/AgCl. On the other hand, the presence of [Fe(CN)6]4− and the absence of methanol brought about ohmic contact behavior on the TiO2 film and exhibited reversible redox waves in the dark due to the [Fe(CN)6]4−/3− couple. Further studies showed that multiple Schottky junctions/ohmic contact behavior inducing simultaneously both photocurrent and overlapped reversible redox waves was found in the CV of a nanoporous TiO2 photoanode soaked in an aqueous redox electrolyte solution containing methanol and [Fe(CN)6]4−. That is, the TiO2 nanosurface responds to [Fe(CN)6]4− to give ohmic redox waves overlapped simultaneously with photocurrents due to the Schottky junction. Additionally, a second step photocurrent generation was observed in the presence of both MeOH and [Fe(CN)6]4− around the redox potential of the iron complex. It was suggested that the iron complex forms a second Schottky junction for which the flat band potential (E fb) lies near the redox potential of the iron complex.

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2

Atiwongsangthong, Narin, and Surasak Niemcharoen. "Photocurrent Enhancement between Two Coplanar Schottky-Barriers on Silicon MSM Photodetector." Advanced Materials Research 684 (April 2013): 265–68. http://dx.doi.org/10.4028/www.scientific.net/amr.684.265.

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Gain properties of dc and ac photocurrent generated between two Schottky barriers coplanarly placed on silicon metal-semiconductor-metal photodetector have been investigated experimentally. The test structure has two square Mo/n-Si Schottky barrier junctions on an n-type silicon substrate with a resistivity of 9-12 Ω-cm and the junction internal separation is 20 m. The current-voltage (I-V) characteristics under illumination in visible range showed a rapid increase in the photocurrent at higher bias region. From the I-V characteristics and noise measurements, increase in photocurrent was ascribed to avalanche multiplication of carriers photogenerated in the reverse-biased Schottky junction. From observation of optical signal demodulation at low frequencies (10 kHz and 50 kHz), it was found that multiplication factor larger than 100 at 10 kHz and 30 at 50 kHz was achieved respectively.

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3

Li, Xinming, and Hongwei Zhu. "The graphene–semiconductor Schottky junction." Physics Today 69, no. 9 (September 2016): 46–51. http://dx.doi.org/10.1063/pt.3.3298.

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4

Seo, Cheolwon, Seung-Hyouk Hong, Ju-Hyung Yun, and Joondong Kim. "N-type Si Schottky Junction Photoelectric Device Using Nickel and Silver." Journal of the Korean Institute of Electrical and Electronic Material Engineers 27, no. 6 (June 1, 2014): 389–93. http://dx.doi.org/10.4313/jkem.2014.27.6.389.

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5

Neetika, Ramesh Chandra, and V. K. Malik. "Temperature Dependent Current-Voltage Characteristics of Pt/MoS2 Schottky Junction." MRS Advances 4, no. 38-39 (2019): 2127–34. http://dx.doi.org/10.1557/adv.2019.283.

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AbstractMolybdenum disulphide (MoS2) is one of the transition metal dichalcogenide (TMD) materials which has attracted attention due to its various interesting properties. MoS2 is very promising for electronic and optoelectronic devices due to its indirect band gap (∼1.2 eV) for few layer and direct band gap (∼1.8 eV) for monolayer MoS2. In MoS2 based Schottky devices, Schottky barrier height depends on the thickness of MoS2 because of its tunable electronic properties. Here, we have used DC sputtering technique to fabricate metal-semiconductor junction of MoS2 with platinum (Pt) metal contacts. In this work, MoS2 thin film (∼10 nm) was deposited on p-Silicon (111) using DC sputtering technique at optimized parameters. Schottky metallization of Pt metal (contact area ∼ 0.785x10-2 cm2) was also done using DC sputtering. Current-voltage (I-V) characteristics of the Pt/MoS2 Schottky junction have been investigated in the temperature range 80-350K. Forward I-V characteristics of Pt/MoS2 junction are analysed to calculate different Schottky parameters. Schottky barrier height increases and ideality factor decreases on increasing the temperature from 80-350K. The I-V-T measurements suggest the presence of local inhomogeneities at the Pt/MoS2 junction. Schottky barrier inhomogeneities occur in case of rough interface. In such cases, the Schottky barrier height does not remain constant and vary locally. Current transport through the Schottky junction is a thermally activated process. As temperature increases, more and more electrons overcome the spatially inhomogeneous barrier height. As a result, the ideality factor becomes close to unity and apparent barrier height increases due to increase in temperature.

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6

Li, Jing Ling, Xiao Xia Cao, Hua Liang Yu, and Yong Jiang Gan. "“Double Junction” of Ag-Doping TiO₂ Nanotubes." Key Engineering Materials 609-610 (April 2014): 175–79. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.175.

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Ag-doping TiO2 nanotubes (Ag-TNTs) were synthesized. A double junction is proposed, involving a Schottky junction and p-n junction (denoted as Ag-p-n junction) occurring between the Ag particles and the nanotube surface, as well as forming inside TiO2 nanotubes, respectively. The strongly built-in electric field of the junctions promotes the separation of photo-holes and photoelectrons, enhancing the photocatalytic efficiency. Ag-TNTs were characterized by XRD and TEM. XRD results indicated that a mixture of anatase and rutile phases. The presence of a new peak at 271 cm1 was revealed by Raman spectral analysis of Ag-TNTs.

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7

Koehler, Andrew D., Travis J. Anderson, Marko J. Tadjer, Anindya Nath, Boris N. Feigelson, David I. Shahin, Karl D. Hobart, and Francis J. Kub. "Vertical GaN Junction Barrier Schottky Diodes." ECS Journal of Solid State Science and Technology 6, no. 1 (December 14, 2016): Q10—Q12. http://dx.doi.org/10.1149/2.0041701jss.

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8

LEE, J. "Pentacene-based photodiode with Schottky junction." Thin Solid Films 451-452 (March 2004): 12–15. http://dx.doi.org/10.1016/j.tsf.2003.10.086.

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9

Ye, Yu, and Lun Dai. "Graphene-based Schottky junction solar cells." Journal of Materials Chemistry 22, no. 46 (2012): 24224. http://dx.doi.org/10.1039/c2jm33809b.

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10

Liao, Tianjun, Jianying Du, Juncheng Guo, Xiaohang Chen, and Jincan Chen. "Schottky junction-based thermophotovoltaic-thermionic devices." Journal of Physics D: Applied Physics 53, no. 5 (November 25, 2019): 055503. http://dx.doi.org/10.1088/1361-6463/ab539e.

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11

Sinha, Dhiraj, and Ji Ung Lee. "Ideal Graphene/Silicon Schottky Junction Diodes." Nano Letters 14, no. 8 (July 16, 2014): 4660–64. http://dx.doi.org/10.1021/nl501735k.

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12

Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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13

Okino, Hiroyuki, Norifumi Kameshiro, Kumiko Konishi, Naomi Inada, Kazuhiro Mochizuki, Akio Shima, Natsuki Yokoyama, and Renichi Yamada. "Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes." Materials Science Forum 740-742 (January 2013): 881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.881.

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The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

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14

Shao, Rui Qiang. "Graphene-Silicon Schottky Junction Fabricating by Laser Reduced Graphene Oxides." Advanced Materials Research 709 (June 2013): 139–42. http://dx.doi.org/10.4028/www.scientific.net/amr.709.139.

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Reported here is a new method of fabricating the graphene/silicon schottky junction. Using a femtosecond laser, graphene oxides are reduced to graphene and behave a metal. The junction of reduced GO and Si shows rectifying behavior indicating that the junction is schottky junction. Take advantage of the laser fabricating method, one can get reduced GO at any position on the substrate. Xps spectra shows that the reduced GO has only 12% oxygen content, and it is truly have a good conductivity similar to metal. This method opens a new effective way to graphene-based micro nano electronics.

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15

Ohashi, Naoki, Junzo Tanaka, Takeshi Ohgaki, Hajime Haneda, Mio Ozawa, and Takaaki Tsurumi. "Isothermal Capacitance Transient Spectroscopy for Deep Levels in Co- and Mn-doped ZnO Single Crystals." Journal of Materials Research 17, no. 6 (June 2002): 1529–35. http://dx.doi.org/10.1557/jmr.2002.0227.

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Deep donor levels in ZnO single crystals doped with transition metal (TM; Co or Mn) were characterized by isothermal capacitance transient spectroscopy (ICTS) applied to ZnO-based Schottky junctions, Au/ZnO (0001) or Ag/ZnO (0001). The barrier height at the junction and donor concentration was not influenced by TM. A deep donor level at 0.28 eV was detected by ICTS; however, its energy dispersion and concentration was composition independent. The effect of doping with TM was found in the magnitude of leakage current; in other words, the leakage current at the Au/ZnO:Mn junction was lower than the other junctions on undoped or Co-doped crystals.

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16

Wang, Xi, Hong Bin Pu, Ji Chao Hu, and Bing Liu. "SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window." Materials Science Forum 1014 (November 2020): 62–67. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.62.

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A novel silicon carbide (SiC) trenched schottky diode with step-shaped junction barrier is proposed for superior static performance and large design window. In the proposed diode, to improve tradeoff between specific on-resistance and surface peak electric field, the shape of the trenched-junction is modified to stair-step, without extra fabrication process. To investigate the performances of the SiC step-shaped trenched junction barrier schottky (SSTJBS) diode, numerical simulations are carried out through Silvaco TCAD. The results indicate that the proposed diode can accommodate highly doped drift region with no degradation of its reverse blocking characteristic. In comparison with the conventional SiC trenched junction barrier schottky (TJBS) diode, the proposed SiC SSTJBS diode shows a larger design window of drift region doping concentration from 7.9×1015cm-3 to 9.5×1015cm-3. In the design window, the specific on-resistance and surface peak electric field can be reduced by 12.9% and 11%, respectively.

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17

Tanimoto, Satoshi, Kenichi Ueoka, Takaya Fujita, Sawa Araki, Kazu Kojima, Toshiharu Makino, and Satoshi Yamasaki. "A New Type of Single Carrier Conduction Rectifier on SiC." Materials Science Forum 858 (May 2016): 769–72. http://dx.doi.org/10.4028/www.scientific.net/msf.858.769.

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A new rectifier, called SPND or SNPD (Schottky-PN or -NP junction diode) and inherently showing low on-resistance and unipolar operation, was experimentally demonstrated for the first time on 4H-SiC. It is structured with an n– or a p– region of very low doping that is sandwiched and completely depleted between a Schottky junction and a one-sided PN junction. Either electrons or holes, but not both, contribute to the current conduction process. Clear and sharp rectifying properties are observed over the entire range of applied voltage.

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18

Pan, Xujie, Jing He, Lei Gao, and Handong Li. "Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions." Nanomaterials 9, no. 12 (December 12, 2019): 1771. http://dx.doi.org/10.3390/nano9121771.

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This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi2Se3 and Sb2Te3). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi2Se3 or Sb2Te3. When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi2Se3/Si and Sb2Te3/Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response time of 2 ms for Bi2Se3/Si junction, and of 15.5% with a 0.8 ms response time for the Sb2Te3/Si junction, were achieved. Therefore, utilizing Si constituents as high-pass filters, the Bi2Se3 (Sb2Te3)/Si heterojunctions can serve as monochromatic NIR photodetectors.

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19

Raynaud, Christophe, Duy Minh Nguyen, Pierre Brosselard, Amador Pérez-Tomás, Dominique Planson, and José Millan. "Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses." Materials Science Forum 615-617 (March 2009): 671–74. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.671.

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Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are protected with surrounding junction termination extension and p+ ring. Temperature dependence of the doping level is first calculated. Then admittance spectra allow detecting defects and extracting their activation energies and capture cross sections. Results seem to indicate the presence of interfacial defects and defects due to the implantation process.

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20

Singh, Ranbir, and Siddarth Sundaresan. "1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000298–301. http://dx.doi.org/10.4071/hiten-wp15.

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Electrical Characteristics of Industry's first commercially available 1200 V rated SiC Schottky rectifiers, specially designed for operation at ≥ 250 °C are presented. These high-temperature SiC rectifiers fabricated in 1, 5, and 20 A current ratings feature reverse leakage currents of < 3 mA/cm2 at 1200 V up to temperatures as high as 300 °C. GeneSiC's 1200 V/20A High Temperature Schottky (designated SHT) rectifier offers a 10x reduction in leakage current and a 23% reduction in junction capacitance when compared to its nearest SiC Schottky rectifier competitor. In addition, these SHT rectifiers demonstrate superior surge-current ratings, and temperature-independent switching capability up to their rated junction temperatures.

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21

Zhao, Jian H., Kuang Sheng, and Ramon C. Lebron-Velilla. "SILICON CARBIDE SCHOTTKY BARRIER DIODE." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 821–66. http://dx.doi.org/10.1142/s0129156405003430.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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22

Cao, Jun, Yuexin Zou, Xue Gong, Ruijie Qian, and Zhenghua An. "Scalable Production of Graphene/Semiconducting Single-Wall Carbon Nanotube Film Schottky Broadband Photodiode Array with Enhanced Photoresponse." Applied Sciences 8, no. 12 (November 23, 2018): 2369. http://dx.doi.org/10.3390/app8122369.

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A general approach was developed to fabricate graphene/semiconducting single-wall carbon nanotube (graphene/s-SWCNT) film Schottky junctions on a large scale. The graphene/s-SWCNT film photodiodes array based on the vertically stacked Schottky junction were fabricated. The all-carbon cross-shaped structure consisted of multielement graphene/s-SWCNT Schottky photodiodes and presented a rich collection of electronics and photonics. The as-fabricated carbon-based photodiode presented an ultra-broadband photodetection characteristic with a high responsivity of 1.75 A/W at near-infrared wavelengths and a fast response rise time of 15 μs. The as-fabricated device clearly showed gate-tunable and wavelength-dependent photoelectric characteristic. Moreover, the corresponding photocurrent excitation spectrum was also demonstrated. In particular, the Si compatible and high throughput fabrication process for the devices made it conducive for large-area multielement optoelectronics devices.

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23

Wadhwa, Pooja, Bo Liu, Mitchell A. McCarthy, Zhuangchun Wu, and Andrew G. Rinzler. "Electronic Junction Control in a Nanotube-Semiconductor Schottky Junction Solar Cell." Nano Letters 10, no. 12 (December 8, 2010): 5001–5. http://dx.doi.org/10.1021/nl103128a.

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24

Khurelbaatar, Zagarzusem, and Chel Jong Choi. "Graphene/Ge Schottky Junction Based IR Photodetectors." Solid State Phenomena 271 (January 2018): 133–37. http://dx.doi.org/10.4028/www.scientific.net/ssp.271.133.

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Ge p-i-n photodetectors with and without graphene on active area fabricated and investigated the graphene effects on opto-electrical properties of photodetectors. The photodetectors were characterized with respect to their dark, photocurrents and responsivities in the wavelength range between 1530-1630 nm. For a 250 um-diameter device at room temperature, it was found that dark current of p-i-n photodetector with graphene were reduced significantly compared with photodetector without graphene. This improvement is attributed to the passivation of the graphene layers that leads to the efficient light detection. Therefore, it is noted that the uniform coverage of graphene onto the Ge surface plays a significant role in advancing their opto-electrical performance of photodetector.

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25

Yi, Sum-Gyun, Sung Hyun Kim, Sungjin Park, Donggun Oh, Hwan Young Choi, Nara Lee, Young Jai Choi, and Kyung-Hwa Yoo. "Mo1–xWxSe2-Based Schottky Junction Photovoltaic Cells." ACS Applied Materials & Interfaces 8, no. 49 (December 5, 2016): 33811–20. http://dx.doi.org/10.1021/acsami.6b11768.

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26

Zetterling, Carl-Mikael, Fanny Dahlquist, Nils Lundberg, Mikael Östling, Kurt Rottner, and Lennart Ramberg. "Junction barrier Schottky diodes in 6H SiC." Solid-State Electronics 42, no. 9 (September 1998): 1757–59. http://dx.doi.org/10.1016/s0038-1101(98)00142-7.

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27

Moongyu Jang, Yarkyeon Kim, Jaeheon Shin, and Seongjae Lee. "Characterization of erbium-silicided Schottky diode junction." IEEE Electron Device Letters 26, no. 6 (June 2005): 354–56. http://dx.doi.org/10.1109/led.2005.848074.

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28

Mohammed, Muatez, Zhongrui Li, Jingbiao Cui, and Tar-pin Chen. "Junction investigation of graphene/silicon Schottky diodes." Nanoscale Research Letters 7, no. 1 (2012): 302. http://dx.doi.org/10.1186/1556-276x-7-302.

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29

Zhang, Xintong, Lining Zhang, Zubair Ahmed, and Mansun Chan. "Origin of Nonideal Graphene-Silicon Schottky Junction." IEEE Transactions on Electron Devices 65, no. 5 (May 2018): 1995–2002. http://dx.doi.org/10.1109/ted.2018.2812200.

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30

Chang, Kyoung Eun, Tae Jin Yoo, Cihyun Kim, Yun Ji Kim, Sang Kyung Lee, So-Young Kim, Sunwoo Heo, Min Gyu Kwon, and Byoung Hun Lee. "Gate-Controlled Graphene-Silicon Schottky Junction Photodetector." Small 14, no. 28 (June 7, 2018): 1801182. http://dx.doi.org/10.1002/smll.201801182.

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31

Abthagir, P. Syed, and R. Saraswathi. "Junction properties of metal/polypyrrole Schottky barriers." Journal of Applied Polymer Science 81, no. 9 (2001): 2127–35. http://dx.doi.org/10.1002/app.1648.

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32

Farhat, Mohamed, Ahmer A. B. Baloch, Sergey N. Rashkeev, Nouar Tabet, Sabre Kais, and Fahhad H. Alharbi. "Bifacial Schottky‐Junction Plasmonic‐Based Solar Cell." Energy Technology 8, no. 5 (January 30, 2020): 1901280. http://dx.doi.org/10.1002/ente.201901280.

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33

Kaneko, Masao, Akira Yamada, Tsunao Kenmochi, and Eishun Tsuchida. "Photoresponse of a Schottky junction polythienylene film." Journal of Polymer Science: Polymer Letters Edition 23, no. 12 (December 1985): 629–31. http://dx.doi.org/10.1002/pol.1985.130231205.

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34

Li, Xinming, Hongwei Zhu, Kunlin Wang, Anyuan Cao, Jinquan Wei, Chunyan Li, Yi Jia, Zhen Li, Xiao Li, and Dehai Wu. "Graphene-On-Silicon Schottky Junction Solar Cells." Advanced Materials 22, no. 25 (April 9, 2010): 2743–48. http://dx.doi.org/10.1002/adma.200904383.

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35

Slepko, Alexander, Jamal Ramdani, and Alexander A. Demkov. "Schottky barrier at the AlN/metal junction." Journal of Applied Physics 113, no. 1 (January 7, 2013): 013707. http://dx.doi.org/10.1063/1.4772716.

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36

Shin, Dong Hee, Ju Hwan Kim, Jung Hyun Kim, Chan Wook Jang, Sang Woo Seo, Ha Seung Lee, Sung Kim, and Suk-Ho Choi. "Graphene/porous silicon Schottky-junction solar cells." Journal of Alloys and Compounds 715 (August 2017): 291–96. http://dx.doi.org/10.1016/j.jallcom.2017.05.001.

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37

Hodes, G., E. Watkins, D. Mantell, L. J. Brillson, M. Peisach, and A. Wold. "WSe2‐based Schottky junctions: The effect of polyiodide treatment on junction behavior." Journal of Applied Physics 71, no. 10 (May 15, 1992): 5077–88. http://dx.doi.org/10.1063/1.350609.

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38

Larsen, Lachlan J., Cameron J. Shearer, Amanda V. Ellis, and Joseph G. Shapter. "Solution processed graphene–silicon Schottky junction solar cells." RSC Advances 5, no. 49 (2015): 38851–58. http://dx.doi.org/10.1039/c5ra03965g.

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Surfactant-assisted exfoliated graphene (SAEG) has been implemented in transparent conducting graphene films which, for the first time, were used to make SAEG–silicon Schottky junctions for photovoltaics.

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39

Luo, Yanbin, Xin Yan, Jinnan Zhang, Bang Li, Yao Wu, Qichao Lu, Chenxiaoshuai Jin, Xia Zhang, and Xiaomin Ren. "A graphene/single GaAs nanowire Schottky junction photovoltaic device." Nanoscale 10, no. 19 (2018): 9212–17. http://dx.doi.org/10.1039/c8nr00158h.

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40

Xu, Hongyi, Na Ren, Jiupeng Wu, Zhengyun Zhu, Qing Guo, and Kuang Sheng. "The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes." Materials 14, no. 3 (January 31, 2021): 663. http://dx.doi.org/10.3390/ma14030663.

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This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabricated with high temperature implantation had less defect density in the implant region compared with room temperature implantation, which contributed to higher hole injection in surge current mode and 20% surge capability improvement. In addition, with lower P+ ohmic contact resistance, the device had higher surge capability. When compared to device fabrication with a single Schottky metal layer in the device active area, adding additional P+ ohmic contact on top of the P+ regions in the device active area resulted in the pn junctions sharing a greater portion of surge current, and improved the devices’ surge capability by ~10%.

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Luongo, Giuseppe, Alessandro Grillo, Filippo Giubileo, Laura Iemmo, Mindaugas Lukosius, Carlos Alvarado Chavarin, Christian Wenger, and Antonio Di Bartolomeo. "Graphene Schottky Junction on Pillar Patterned Silicon Substrate." Nanomaterials 9, no. 5 (April 26, 2019): 659. http://dx.doi.org/10.3390/nano9050659.

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A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector.

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Heo, Jun-Woo, Sejun Hong, Seok-Gyu Choi, and Hyun-Seok Kim. "Analysis of Hyperabrupt and Uniform Junctions in GaAs for the Application of Varactor Diode." Journal of Nanoscience and Nanotechnology 15, no. 10 (October 1, 2015): 7457–61. http://dx.doi.org/10.1166/jnn.2015.11140.

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In this study, we present a GaAs varactor diode with a hyperabrupt junction for the enhancement of breakdown voltage and capacitance variation in a reverse bias state. The hyperabrupt doping profile in the n-type active layer is prepared in a controlled nonlinear manner, with the density of the dopants increasing towards the Schottky junction. The hyperabrupt GaAs varactor diode is fabricated and characterized for breakdown voltage and capacitance over the electric field, induced by an applied reverse bias voltage. A reduced value of the electric field is observed owing to the nonlinear behavior of the electric field at the hyperabrupt junction, although the device has a larger doping density at the Schottky junction. Furthermore, the capacitance ratio of the hyperabrupt junction diode is also improved. Variation in the device capacitance is affected by variation in the depletion region across the junction. Technology CAD is used to understand the experimental phenomena by considering the magnitude of charge density as a function of the doping profile. A higher breakdown voltage and greater capacitance modulation are shown in the hyperabrupt junction diode compared to the uniform junction diode.

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Cho, Hak Dong, Im Taek Yoon, Sh U. Yuldashev, Tae Won Kang, Deuk Young Kim, and Jong-Kwon Lee. "Electroluminescence in a rectifying graphene/InGaN junction." RSC Advances 7, no. 80 (2017): 50853–57. http://dx.doi.org/10.1039/c7ra10672f.

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Phetchakul, Toempong, Wittaya Luanatikomkul, Chana Leepattarapongpan, E. Chaowicharat, Putapon Pengpad, and Amporn Poyai. "The Study of p-n and Schottky Junction for Magnetodiode." Advanced Materials Research 378-379 (October 2011): 663–67. http://dx.doi.org/10.4028/www.scientific.net/amr.378-379.663.

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This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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Ma, Xiying, and Weixia Gu. "The photoelectric characteristics of a few-layer graphene/Si Schottky junction solar cell." International Journal of Modern Physics B 29, no. 02 (December 22, 2014): 1450248. http://dx.doi.org/10.1142/s0217979214502488.

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We present a study of the photovoltaic effects of a graphene/n- Si Schottky junction solar cell. The graphene/Si solar cell was prepared by means of rapid chemical vapor deposition, while the graphene films were grown with a CH 4/ Ar mixed gas under a constant flow at 950°C and then annealed at 1000°C. It was found that the junction between the graphene film and the n- Si structure played an important role in determining the device performance. An energy conversion efficiency of 2.1% was achieved under an optical illumination of 100 mW. The strong photovoltaic effects of the cell were due to device junction's ability to efficiently generate and separate electron–hole pairs.

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Hirokazu, Fujiwara, T. Katsuno, Tsuyoshi Ishikawa, H. Naruoka, Masaki Konishi, T. Endo, Y. Watanabe, et al. "Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes." Materials Science Forum 717-720 (May 2012): 911–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.911.

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The impact of threading dislocation density on the leakage current of reverse IV characteristics in 1.2 kV Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs), and PN junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. For example, the correlation in SBDs is strong, but weak in PNDs. The threading dislocations were found to be in the same location as the current leakage points in the SBDs, but not in the PNDs. Nano-scale inverted cone pits were observed at the Schottky junction interface in SBDs, and it was found that leakage current increases in these diodes due to the concentration of electric fields at the peaks of the pits. These nano-scale pits were also observed directly above threading dislocations. In addition, this study succeeded in reducing the leakage current variation of 200 A-class JBSDs and SBDs by eliminating the nano-scale pits above the threading dislocations. As a result, a theoretical straight-line waveform was achieved.

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Wang, Xiaolei, Xupeng Sun, Shuainan Cui, Qianqian Yang, Tianrui Zhai, Jinliang Zhao, Jinxiang Deng, and Antonio Ruotolo. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions." Sensors 21, no. 9 (April 25, 2021): 3009. http://dx.doi.org/10.3390/s21093009.

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Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.

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Kim, Han-Soo, Seong-Dong Kim, Min-Koo Han, and Yearn-Ik Choi. "Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact." Japanese Journal of Applied Physics 34, Part 1, No. 2B (February 28, 1995): 913–16. http://dx.doi.org/10.1143/jjap.34.913.

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Bhattacharjee, Mitradip, Seim Timung, Tapas Kumar Mandal, and Dipankar Bandyopadhyay. "Microfluidic Schottky-junction photovoltaics with superior efficiency stimulated by plasmonic nanoparticles and streaming potential." Nanoscale Advances 1, no. 3 (2019): 1155–64. http://dx.doi.org/10.1039/c8na00362a.

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Ayhan, Muhammed Emre, Golap Kalita, Masaharu Kondo, and Masaki Tanemura. "Photoresponsivity of silver nanoparticles decorated graphene–silicon Schottky junction." RSC Adv. 4, no. 51 (2014): 26866–71. http://dx.doi.org/10.1039/c4ra02867h.

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