Relevant bibliographies by topics / Schrödinger Poisson Solver

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Schrödinger Poisson Solver'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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Journal articles on the topic "Schrödinger Poisson Solver"

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Kosina, H., and C. Troger. "SPIN – A Schrödinger-Poisson Solver Including Nonparabolic Bands." VLSI Design 8, no. 1-4 (1998): 489–93. http://dx.doi.org/10.1155/1998/39231.

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Nonparabolicity effects in two-dimensional electron systems are quantitatively analyzed. A formalism has been developed which allows to incorporate a nonparabolic bulk dispersion relation into the Schrödinger equation. As a consequence of nonparabolicity the wave functions depend on the in-plane momentum. Each subband is parametrized by its energy, effective mass and a subband nonparabolicity coefficient. The formalism is implemented in a one-dimensional Schrödinger-Poisson solver which is applicable both to silicon inversion layers and heterostructures.
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Mina, Mattia, David F. Mota, and Hans A. Winther. "SCALAR: an AMR code to simulate axion-like dark matter models." Astronomy & Astrophysics 641 (September 2020): A107. http://dx.doi.org/10.1051/0004-6361/201936272.

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We present a new code, SCALAR, based on the high-resolution hydrodynamics and N-body code RAMSES, to solve the Schrödinger equation on adaptive refined meshes. The code is intended to be used to simulate axion or fuzzy dark matter models where the evolution of the dark matter component is determined by a coupled Schrödinger-Poisson equation, but it can also be used as a stand-alone solver for both linear and non-linear Schrödinger equations with any given external potential. This paper describes the numerical implementation of our solver and presents tests to demonstrate how accurately it oper
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Karner, Markus, Andreas Gehring, Stefan Holzer, et al. "A multi-purpose Schrödinger-Poisson Solver for TCAD applications." Journal of Computational Electronics 6, no. 1-3 (2007): 179–82. http://dx.doi.org/10.1007/s10825-006-0077-7.

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Khoie, R. "A Study of Transconductance Degradation in HEMT Using a Self-consistent Boltzmann-Poisson-Schrödinger Solver." VLSI Design 6, no. 1-4 (1998): 73–77. http://dx.doi.org/10.1155/1998/27462.

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A self-consistent Boltzmann-Poisson-Schrödinger Solver is used to study the transconductance degradation in high electron mobility transistor (HEMT), which has extensively been reported by both experimental [1]-[8] and computational [9]-[ 13] researchers. As the gate voltage of a HEMT device is increased, its transconductance increases until it reaches a peak value, beyond which, the transconductance is degraded rather sharply with further increase in applied gate bias. We previously reported a two-subband self-consistent Boltzmann-Poisson- Schrödinger Solver for HEMT. [14] We further incorpor
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Ramey, S., and R. Khoie. "Formulation of a Self-Consistent Model for Quantum Well pin Solar Cells: Dark Behavior." VLSI Design 8, no. 1-4 (1998): 419–22. http://dx.doi.org/10.1155/1998/61791.

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A self-consistent numerical simulation model for a pin single-cell solar cell is formulated. The solar cell device consists of a p–AlGaAs region, an intrinsic i–AlGaAs/GaAs region with several quantum wells, and a n–AlGaAs region. Our simulator solves a field-dependent Schrödinger equation self-consistently with Poisson and drift-diffusion equations. The field-dependent Schrödinger equation is solved using the transfer matrix method. The eigenfunctions and eigenenergies obtained are used to calculate the escape rate of carriers from the quantum wells, the capture rates of carriers by the wells
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Mauser, Norbert J., and Yong Zhang. "Exact Artificial Boundary Condition for the Poisson Equation in the Simulation of the 2D Schrödinger-Poisson System." Communications in Computational Physics 16, no. 3 (2014): 764–80. http://dx.doi.org/10.4208/cicp.110813.140314a.

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AbstractWe study the computation of ground states and time dependent solutions of the Schrödinger-Poisson system (SPS) on a bounded domain in 2D (i.e. in two space dimensions). On a disc-shaped domain, we derive exact artificial boundary conditions for the Poisson potential based on truncated Fourier series expansion in θ, and propose a second order finite difference scheme to solve ther-variable ODEs of the Fourier coefficients. The Poisson potential can be solved within(MNlogN) arithmetic operations whereM,Nare the number of grid points inr-direction and the Fourier bases. Combined with the
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Mantas, José M., and Francesco Vecil. "Hybrid OpenMP-CUDA parallel implementation of a deterministic solver for ultrashort DG-MOSFETs." International Journal of High Performance Computing Applications 34, no. 1 (2019): 81–102. http://dx.doi.org/10.1177/1094342019879985.

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The simulation of ultrashort two-dimensional double gate metal-oxide semiconductor field-effect transistors and similar semiconductor devices through a deterministic mesoscopic, hence accurate, model can be very useful for the industry: It can provide reference results for macroscopic solvers and properly describe weakly charged zones of the device. For the scope of this work, we use a Boltzmann–Schrödinger–Poisson model. Its drawback is being particularly costly from the computational point of view, and a purely sequential code may take weeks to simulate high voltages. In this article, we dev
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Cheng, Candong, Joon-Ho Lee, Hisham Z. Massoud, and Qing Huo Liu. "3-D self-consistent Schrödinger-Poisson solver: the spectral element method." Journal of Computational Electronics 7, no. 3 (2008): 337–41. http://dx.doi.org/10.1007/s10825-008-0204-8.

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Wang, Lingquan, Deli Wang, and Peter M. Asbeck. "A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures." Solid-State Electronics 50, no. 11-12 (2006): 1732–39. http://dx.doi.org/10.1016/j.sse.2006.09.013.

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Ramayya, E. B., and I. Knezevic. "Self-consistent Poisson-Schrödinger-Monte Carlo solver: electron mobility in silicon nanowires." Journal of Computational Electronics 9, no. 3-4 (2010): 206–10. http://dx.doi.org/10.1007/s10825-010-0341-8.

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Dissertations / Theses on the topic "Schrödinger Poisson Solver"

1

"Full-band Schrödinger Poisson Solver for DG UTB SOI MOSFET." Master's thesis, 2016. http://hdl.handle.net/2286/R.I.40796.

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abstract: Moore's law has been the most important driving force for the tremendous progress of semiconductor industry. With time the transistors which form the fundamental building block of any integrated circuit have been shrinking in size leading to smaller and faster electronic devices.As the devices scale down thermal effects and the short channel effects become the important deciding factors in determining transistor architecture.SOI (Silicon on Insulator) devices have been excellent alternative to planar MOSFET for ultimate CMOS scaling since they mitigate short channel effects. Hence a
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"Efficient Schrödinger-Poisson Solvers for Quasi 1D Systems That Utilize PETSc and SLEPc." Master's thesis, 2020. http://hdl.handle.net/2286/R.I.63056.

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abstract: The quest to find efficient algorithms to numerically solve differential equations isubiquitous in all branches of computational science. A natural approach to address this problem is to try all possible algorithms to solve the differential equation and choose the one that is satisfactory to one's needs. However, the vast variety of algorithms in place makes this an extremely time consuming task. Additionally, even after choosing the algorithm to be used, the style of programming is not guaranteed to result in the most efficient algorithm. This thesis attempts to address the same pro
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Book chapters on the topic "Schrödinger Poisson Solver"

1

Pourfath, Mahdi, and Hans Kosina. "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors." In Large-Scale Scientific Computing. Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/11666806_66.

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Conference papers on the topic "Schrödinger Poisson Solver"

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Noei, Maziar, Dino Ruic, and Christoph Jungemann. "Small-signal analysis of silicon nanowire transistors based on a Poisson/Schrödinger/Boltzmann solver." In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2017. http://dx.doi.org/10.23919/sispad.2017.8085265.

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Noei, Maziar, and Christoph Jungemann. "Numerical investigation of junctionless nanowire transistors using a Boltzmann/Schrödinger/Poisson full Newton-Raphson solver." In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2016. http://dx.doi.org/10.1109/sispad.2016.7605137.

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You might also be interested in the extended bibliographies on the topic 'Schrödinger Poisson Solver' for particular source types:
Journal articles
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