Academic literature on the topic 'Second-order Raman spectroscopy'

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Journal articles on the topic "Second-order Raman spectroscopy"

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Lee, Young-Jae. "The second order Raman spectroscopy in carbon crystallinity." Journal of Nuclear Materials 325, no. 2-3 (February 2004): 174–79. http://dx.doi.org/10.1016/j.jnucmat.2003.12.005.

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Wang, Shuai, Tingting Li, Liping Wu, Lei Zhang, Li Dong, Xun Hu, and Chun-Zhu Li. "Second-order Raman spectroscopy of char during gasification." Fuel Processing Technology 135 (July 2015): 105–11. http://dx.doi.org/10.1016/j.fuproc.2014.11.002.

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Solozhenko, Vladimir L., Oleksandr O. Kurakevych, and Pierre Bouvier. "First and second-order Raman scattering of B6O." Journal of Raman Spectroscopy 40, no. 8 (August 2009): 1078–81. http://dx.doi.org/10.1002/jrs.2243.

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Murugkar, S., R. Merlin, A. Botchkarev, A. Salvador, and H. Morkoç. "Second order Raman spectroscopy of the wurtzite form of GaN." Journal of Applied Physics 77, no. 11 (June 1995): 6042–43. http://dx.doi.org/10.1063/1.359190.

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Myers Kelley, Anne. "Resonance Raman and hyper-Raman spectroscopy of organic chromophores for second-order nonlinear optics." International Journal of Quantum Chemistry 104, no. 5 (2005): 602–15. http://dx.doi.org/10.1002/qua.20520.

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Jiang, Yi-Jian, Ling-Zhi Zeng, Rong-Ping Wang, Yong Zhu, and Yu-Long Liu. "Fundamental and Second-Order Raman Spectra of BaT iO3." Journal of Raman Spectroscopy 27, no. 1 (January 1996): 31–34. http://dx.doi.org/10.1002/(sici)1097-4555(199601)27:1<31::aid-jrs920>3.0.co;2-k.

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Iwafuchi, N., S. Mizuno, Yasuhiko Benino, Takumi Fujiwara, Takayuki Komatsu, M. Koide, and K. Matsushita. "Nano-Crystallized Glass Fibers with Second-Order Optical Nonlinearity." Advanced Materials Research 11-12 (February 2006): 209–12. http://dx.doi.org/10.4028/www.scientific.net/amr.11-12.209.

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Transparent nano-crystallized glass fibers with 300μm diameter were successfully fabricated in tellurite (TeO2) based glass systems. Structure of crystallized glass fibers and orientation of nano-size crystals were quantitatively investigated by microscopic Raman spectroscopy and X-ray diffraction. Second harmonic generation was measured in the nano-crystallized optical fibers.
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Shoute, Lian C. T., Mireille Blanchard-Desce, and Anne Myers Kelley. "Tunable resonance hyper-Raman spectroscopy of second-order nonlinear optical chromophores." Journal of Chemical Physics 121, no. 15 (October 15, 2004): 7045–48. http://dx.doi.org/10.1063/1.1806131.

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Spencer, G. S., J. Grant, R. Gray, J. Zolman, J. Menéndez, R. Droopad, and G. N. Maracas. "Second-order Raman spectroscopy of AlAs: A test of lattice-dynamical models." Physical Review B 49, no. 8 (February 15, 1994): 5761–64. http://dx.doi.org/10.1103/physrevb.49.5761.

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Gao, Haiyong, Fawang Yan, Huixiao Zhang, Jinmin Li, Junxi Wang, and Jianchang Yan. "First and second order Raman scattering spectroscopy of nonpolar a-plane GaN." Journal of Applied Physics 101, no. 10 (May 15, 2007): 103533. http://dx.doi.org/10.1063/1.2735402.

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Dissertations / Theses on the topic "Second-order Raman spectroscopy"

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Goudreault, Félix Antoine. "Calculs numériques du spectre Raman double-résonant du phosphorène." Thèse, 2018. http://hdl.handle.net/1866/22208.

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Favron, Alexandre. "Photo-oxydation et spectroscopie Raman de couches minces de phosphore noir." Thèse, 2018. http://hdl.handle.net/1866/21756.

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Tshabalala, Oupa Samuel. "The development of FT-Raman techniques to quantify the hydrolysis of Cobalt (III) nitrophenylphosphate complexes using multivariate data analysis." Diss., 2007. http://hdl.handle.net/10500/23202.

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The FT-Raman techniques were developed to quantify reactions that follow on mixing aqueous solutions of bis-(1,3-diaminopropane)diaquacobalt( III) ion ([Co(tn)2(0H)(H20)]2+) and p-nitrophenylphosphate (PNPP). For the development and validation of the kinetic modelling technique, the well-studied inversion of sucrose was utilized. Rate constants and concentrations could be estimated using calibration solutions and modelling methods. It was found that the results obtained are comparable to literature values. Hence this technique could be further used for the [Co(tn)2(0H)(H20)]2+ assisted hydrolysis of PNPP. It was found that rate constants where the pH is maintained at 7.30 give results which differ from those where the pH is started at 7.30 and allowed to change during the reaction. The average rate constant for 2:1 ([Co(tn)2(0H)(H20)]2+:PNPP reactions was found to be approximately 3 x 104 times the unassisted PNPP hydrolysis rate.
Chemistry
M. Sc. (Chemistry)
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Books on the topic "Second-order Raman spectroscopy"

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Saito, R., A. Jorio, J. Jiang, K. Sasaki, G. Dresselhaus, and M. S. Dresselhaus. Optical properties of carbon nanotubes and nanographene. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.1.

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This article examines the optical properties of single-wall carbon nanotubes (SWNTs) and nanographene. It begins with an overview of the shape of graphene and nanotubes, along wit the use of Raman spectroscopy to study the structure and exciton physics of SWNTs. It then considers the basic definition of a carbon nanotube and graphene, focusing on the crystal structure of graphene and the electronic structure of SWNTs, before describing the experimental setup for confocal resonance Raman spectroscopy. It also discusses the process of resonance Raman scattering, double-resonance Raman scattering, and the Raman signals of a SWNT as well as the dispersion behavior of second-order Raman modes, the doping effect on the Kohn anomaly of phonons, and the elastic scattering of electrons and photons. The article concludes with an analysis of excitons in SWNTs and outlines future directions for research.
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Book chapters on the topic "Second-order Raman spectroscopy"

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Morita, K., K. M. Itoh, M. Nakajima, H. Harima, K. Mizoguchi, Y. Shiraki, and E. E. Haller. "First- and Second-Order Raman Spectroscopy of 70Genn/76Genn Isotope Superlattices." In Springer Proceedings in Physics, 877–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_416.

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Conference papers on the topic "Second-order Raman spectroscopy"

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Knoesen, André, Israel Rocha-Mendoza, Diego R. Yankelevich, Mingshi Wang, Karen M. Reiser, and Curt W. Frank. "Optical Second Order Nonlinearity in Collagen: Molecular Origins Determined by Sum-Frequency, Infrared and Raman Spectroscopy." In Frontiers in Optics. Washington, D.C.: OSA, 2007. http://dx.doi.org/10.1364/fio.2007.ftuo2.

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Moroizumi, Hiroyuki, Shohei Chiashi, Yasuyuki Takata, and Masamichi Kohno. "Water Molecule Adsorption on Vertically Aligned Single-Walled Carbon Nanotubes." In ASME 2014 12th International Conference on Nanochannels, Microchannels, and Minichannels collocated with the ASME 2014 4th Joint US-European Fluids Engineering Division Summer Meeting. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/icnmm2014-21468.

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A single walled carbon nanotube, which adsorbed water molecule in its nano channel, was observed using Raman spectroscopy, and two samples’ spectrums were compared under the same conditions. The SWNT samples that were vertically aligned on the silicon substrate were used. One of the samples was not covered by polymer whereas the other sample was covered by polymer. In our experiment, a nano channel was made using a nanosecond pulse laser (Nd:YAG laser). In order to adjust the focus, the sample was set on the automatic stage and controlled on the PC using a USB camera to watch closely. By moving the stage for over 30 seconds, the sample was processed to make the nano channel. The cell with the laser-processed sample in it was set on the Raman spectroscopy’s platform. Then, the cell was connected to the vacuum chamber and erlenmeyer flask by the valve. Both of the valves were opened first and left for a while to make the cell vacuum. Second, the vacuum chamber’s valve was closed and left for a while to let water molecule spread in the cell. Finally, the SWNT successfully adsorbed water molecule in its nano channel. Ar-ion laser was used in the Raman spectroscopy and the laser wavelength is 488nm. With the Raman spectroscopy, Radial Breathing Mode (RBM), D-band, and G-band were mainly observed. The RBM, D-band, and G-band originated from radial vibration frequency, defective structure, and graphite structure respectively. According to the sample types, the RBM spectrums were compared in our experiment.
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Goryu, Akihiro, Mitsuaki Kato, Akira Kano, Satoshi Izumi, and Kenji Hirohata. "Evaluation Method for Mechanical Stress Dependence of the Electrical Characteristics of SiC MOSFET for Electro-Thermal-Structural Coupled Analysis." In ASME 2017 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/imece2017-72027.

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Power semiconductor devices such as MOSFET/IGBT and PiN diodes are widely used as basic components for supporting infrastructure in the field of electronics, including in power conversion, industrial equipment, railways, and automobiles. Recently, increasing attention has been paid to silicon carbide (SiC) as a wide-band-gap semiconductor suitable for use in power devices with low loss and high breakdown voltage. However, basic knowledge of the material properties and reliability of SiC devices, and particularly the influence of mechanical stress on device characteristics, is still incomplete. In this paper, we evaluated the effect of mechanical stress on the electrical characteristics of SiC devices. In order to investigate the effect of stress on the SiC device characteristic, we propose a simple evaluation method using four-point bending, which is a classical method capable of applying uniaxial stress to a device. With this method, we evaluated the stress in a SiC device using residual stress measurement by Raman spectroscopy and stress simulation based on the finite element method. Our proposed experimental method is as follows. First, the SiC device was bonded with AuGe solder to a metal plate [phosphor bronze; Young’s modulus: 105 GPa; Poisson’s ratio: 0.33; dimensions: 100 mm (W) × 12 mm (L) × 2 mm (T)], and aluminum wire (wire radius: 200 μm) was also bonded to the device. Second, the prepared device was placed on the specially designed four-point bending apparatus for mechanical stress experiments. Finally, the sample was bent in compression or tension in the in-plane direction by the four-point system. The SiC device was subjected to compression or tensile stress via the metal plate. The electrical characteristics of the SiC-MOSFET were measured with a curve tracer in our proposed system. Id−Vds characteristics changed linearly as stress was applied to the device. As a result, the on-resistance was increased by 7.6% by applying a tensile stress of 300 MPa and was decreased by 1.0% by applying a compressive stress of 100 MPa at room temperature, respectively. A power device circuit with multiple chips was also simulated by SPICE based on the experimental results to confirm the effects of stress on SiC devices in a power module. Simulated MOSFET model contains stress factors obtained from experimental results. The circuit was simulated by electro-thermal coupled analysis using a one-dimensional model of the electric circuit and thermal circuit constructed in SPICE. The results show that the proposed method is powerful simulation method for power device design.
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