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Journal articles on the topic 'Semiconducting ferromagnets'

Author: Grafiati

Published: 5 June 2025

Last updated: 2 August 2025

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1

Sheng, Kang, Hong-Kuan Yuan, and Zhi-Yong Wang. "Intrinsic ferromagnetism in 2D h-CrC semiconductors with strong magnetic anisotropy and high Curie temperatures." Journal of Materials Chemistry C 9, no. 46 (2021): 16495–505. http://dx.doi.org/10.1039/d1tc04389g.

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2

Xiao, Ming-wen, and Zheng-zhong Li. "Tunneling theory for exchange coupling between two ferromagnets separated by an amorphous-semiconducting barrier." Physical Review B 54, no. 5 (1996): 3322–27. http://dx.doi.org/10.1103/physrevb.54.3322.

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3

Ming-Wen, Xiao, Li Zheng-Zhong, and Xu Wang. "Heat-Activated Effect of Exchange Coupling Between Two Ferromagnets Separated by an Amorphous Semiconducting Barrier." Chinese Physics Letters 19, no. 11 (2002): 1691–94. http://dx.doi.org/10.1088/0256-307x/19/11/336.

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4

Khanvilkar, M. B., A. K. Nikumbh, S. M. Patange, et al. "Structural, electrical and magnetic properties of substituted pyrochlore oxide nanoparticles synthesized by the co-precipitation method." Physics and Chemistry of Solid State 22, no. 2 (2021): 353–71. http://dx.doi.org/10.15330/pcss.22.2.353-371.

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Five substituted pyrochlore nanooxides such as Nd1.9Ho0.1Zr1.8Ce0.2O7, La1.95Ce0.05Zr0.29Ce1.71O7, Y1.79Pr0.21Ru1.99Pr0.01O7, Dy1.9Yb0.1Mn1.93Cu0.07O7 and Dy1.99Sr0.01Sn2O7 were synthesized by coprecipitation method. These precursors were monitored by thermal studies (TGA-DTA). The prepared nanosized substituted pyrochlore oxides were characterized by EDS, XRD, SEM, TEM, d. c. electrical conductivity, Thermoelectric power, Hall effect measurement, dielectric properties and magnetization measurements. XRD confirmed the formation of a single phase crystalline substituted pyrochlores with a cubic

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5

Barth, Joachim, Gerhard H. Fecher, Benjamin Balke, et al. "Anomalous transport properties of the half-metallic ferromagnets Co 2 TiSi, Co 2 TiGe and Co 2 TiSn." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1951 (2011): 3588–601. http://dx.doi.org/10.1098/rsta.2011.0183.

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In this work, the theoretical and experimental investigations of Co 2 Ti Z ( Z =Si, Ge or Sn) compounds are reported. Half-metallic ferromagnetism is predicted for all three compounds with only two bands crossing the Fermi energy in the majority channel. The magnetic moments fulfil the Slater–Pauling rule and the Curie temperatures are well above room temperature. All compounds show a metallic-like resistivity for low temperatures up to their Curie temperature, above the resistivity changes to semiconducting-like behaviour. A large negative magnetoresistance (MR) of 55 per cent is observed for

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6

HAN, Y. P., X. J. WANG, Q. R. HOU, Q. W. WANG, and J. X. WANG. "MAGNETIC PROPERTIES OF Fe0.95Co0.05Si2 SEMICONDUCTING FILM." Modern Physics Letters B 26, no. 15 (2012): 1250097. http://dx.doi.org/10.1142/s0217984912500972.

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The Fe 0.95 Co 0.05 Si 2 semiconducting film has been successfully grown on glass substrate by magnetron sputtering at substrate temperature of 637 K and then thermal annealing at 823 K for one hour in high vacuum. The Raman data and high Seebeck coefficient suggested that the β- Fe 0.95 Co 0.05 Si 2 semiconducting film was achieved. Room temperature ferromagnetism was observed, and the ferromagnetic phase transition was at about 380 K. The possible reason for the ferromagnetism of the β- Fe 0.95 Co 0.05 Si 2 semiconducting film was discussed.

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7

Zhou, Xiaocheng, Xu Sun, Zhuhua Zhang, and Wanlin Guo. "Ferromagnetism in a semiconducting Janus NbSe hydride monolayer." Journal of Materials Chemistry C 6, no. 36 (2018): 9675–81. http://dx.doi.org/10.1039/c8tc03016b.

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8

Lomas, L., A. Leaustic, J. P. Audière, and R. Clément. "Molecular Semiconducting Ferromagnets with High Curie Temperature and New Molecular Metals Obtained upon Intercalation of the Layered MPS₃ Materials." Materials Science Forum 91-93 (January 1992): 641–46. http://dx.doi.org/10.4028/www.scientific.net/msf.91-93.641.

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9

Liyanage, Laalitha S. I., Jagoda Sławińska, Priya Gopal, Stefano Curtarolo, Marco Fornari, and Marco Buongiorno Nardelli. "High-Throughput Computational Search for Half-Metallic Oxides." Molecules 25, no. 9 (2020): 2010. http://dx.doi.org/10.3390/molecules25092010.

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Half metals are a peculiar class of ferromagnets that have a metallic density of states at the Fermi level in one spin channel and simultaneous semiconducting or insulating properties in the opposite one. Even though they are very desirable for spintronics applications, identification of robust half-metallic materials is by no means an easy task. Because their unusual electronic structures emerge from subtleties in the hybridization of the orbitals, there is no simple rule which permits to select a priori suitable candidate materials. Here, we have conducted a high-throughput computational sea

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10

Chambers, Scott A., and Robin F. C. Farrow. "New Possibilities for Ferromagnetic Semiconductors." MRS Bulletin 28, no. 10 (2003): 729–33. http://dx.doi.org/10.1557/mrs2003.214.

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AbstractNew candidate ferromagnetic semiconductors have recently been grown by doping semiconducting transition-metal oxides with magnetic impurities. Some of these exhibit ferromagnetism at and above room temperature. The critical question is why? In many cases, complex solid-state chemistry is involved in the synthesis and drives the resulting properties. The observation of room-temperature ferromagnetism in these materials must be accompanied by a careful identification of the phases and structures present in order to accurately identify the origin of the magnetism.

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11

KAR, MANORANJAN, and S. RAVI. "STUDY OF ELECTRICAL TRANSPORT AND AC SUSCEPTIBILITY IN LaMn1-xCuxO3." Modern Physics Letters B 19, no. 06 (2005): 317–30. http://dx.doi.org/10.1142/s0217984905008323.

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LaMn 1-x Cu x O 3 compounds have been prepared in single phase form for x = 0 to 0.30. X-ray diffraction patterns recorded at room temperature could be mostly refined using Pbnm space group. Paramagnetic-to-ferromagnetic transitions have been observed up to x = 0.30, from ac susceptibility measurements. Metal–insulator transition in the vicinity of ferromagnetic transition temperature has been observed for x = 0.05 and the resistivity data in the metallic region could be explained in terms of electron–electron and electron–magnon scattering mechanisms. Further increase in Cu-doping beyond x =

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12

Gupta, Sanju, Hanna Świątek, Mirosław Sawczak, Tomasz Klimczuk, and Robert Bogdanowicz. "Investigating Layered Topological Magnetic Materials as Efficient Electrocatalysts for the Hydrogen Evolution Reaction under High Current Densities." Catalysts 14, no. 10 (2024): 676. http://dx.doi.org/10.3390/catal14100676.

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Despite considerable progress, high-performing durable catalysts operating under large current densities (i.e., >1000 mA/cm2) are still lacking. To discover platinum group metal-free (PGM-free) electrocatalysts for sustainable energy, our research involves investigating layered topological magnetic materials (semiconducting ferromagnets) as highly efficient electrocatalysts for the hydrogen evolution reaction under high current densities and establishes the novel relations between structure and electrochemical property mechanisms. The materials of interest include transition metal trihalide

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13

Tsogbadrakh, Namsrai. "First-Principles Study of Carrier-Mediated and Vacancy-Induced Ferromagnetism in Molybdenum Disulfide Monolayer." Solid State Phenomena 323 (August 30, 2021): 166–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.323.166.

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We have investigated the magnetic properties of semiconducting molybdenum disulfide (MoS2) monolayer (ML) using the plane wave self-consistent field (PWscf) method within the framework of density functional theory (DFT). The pristine semiconducting bulk MoS2 is nonmagnetic (NM), due to the spin pairing of two electrons. We have indicated that the carrier-mediated ferromagnetism is available on the MoS2 ML as both the hole and electron carriers. The ordinary neutral S (VS0) vacancy creates the localized vacancy defect level and this level does not create the ferromagnetic (FM) state due to the

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14

Li, Zhi, Dan-Dan Xu, Shu-Yu Ning, et al. "Predicted Weyl fermions in magnetic GdBi and GdSb." International Journal of Modern Physics B 31, no. 29 (2017): 1750217. http://dx.doi.org/10.1142/s0217979217502174.

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Motivated by the chiral anomaly steering negative longitudinal magnetoresistance in GdBiPt under external magnetic field, we studied the electronic structures of GdBi with paramagnetism, antiferromagnetism and ferromagnetism by first-principles calculations with modified Becke and Johnson local density approximation plus Hubbard [Formula: see text]. Our calculated results reveal that paramagnetic GdBi is semiconducting, while the antiferromagnetic GdBi is a topological nontrivial compensation metal. We also predict the presence of a pair of Weyl fermions in ferromagnetic GdBi and GdSb. The ban

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15

Fukawa, Akihiro, Takuto Nakazawa, Josuke Tamura, et al. "Room-temperature ferromagnetism in metal–insulator transition nanoparticles of VO₂." Applied Physics Letters 122, no. 5 (2023): 052403. http://dx.doi.org/10.1063/5.0132027.

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There have been many reports on room-temperature ferromagnetism (RTFM), which is often observed in pure semiconductor nanoparticles without transition metal elements. Because RTFM tends to be found in semiconducting thin films or nanoparticles, the origin of ferromagnetism is believed to result from the specific surface structure or defects on the surface. However, there is no direct evidence for such surface phenomena, and the relationship between RTFM and physical properties reported in the bulk state must be investigated. If RTFM is independent of the bulk properties, then it is concluded t

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16

Zhou, Yong, Roman Ovcharenko, Beate Paulus, Yuriy Dedkov, and Elena Voloshina. "Modification of the magnetic and electronic properties of the graphene-Ni(111) interface via halogens intercalation." Advanced Theory and Simulations 5 (November 23, 2021): 2100319. https://doi.org/10.1002/adts.202100319.

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   Electronic decoupling of graphene from metallic and semiconducting substrates via intercalation of different species is one of the widely used approaches in studies of graphene. In the present work, the modification of the electronic and magnetic properties of graphene on ferromagnetic Ni(111) layer via intercalation of halogen atoms (X = F, Cl, Br) is studied using the state-of-the-art density-functional theory approach. It is found that in all gr/X/Ni(111) intercalation systems, a graphene layer is fully electronically decoupled from the ferromagnetic substrate; howeve

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17

Bierman, M. J., K. M. Van Heuvelen, D. Schmeißer, T. C. Brunold, and S. Jin. "Ferromagnetic Semiconducting EuO Nanorods." Advanced Materials 19, no. 18 (2007): 2677–81. http://dx.doi.org/10.1002/adma.200602612.

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18

Pan, Diangang, Lu Li, Junyu Yang, and Hong Chang. "Magnetic Properties and Carrier Transport of Ir0.9Mn1−xSn1.1+x." Materials 12, no. 2 (2019): 283. http://dx.doi.org/10.3390/ma12020283.

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The nonstoichiometric Ir0.9Mn1−xSn1.1+x (x = 0.1, 0.05, and −0.05) are crystallized in half-Heusler alloys. The magnetic transition is observed at 77 K for x = 1.05, and it decreases with the decreasing Mn content. It is proven to be a ferromagnetic transition with a nonlinear magnetic moment alignment, as the magnetization is not saturated at 70 kOe. The different magnetic behavior than a typical ferromagnet (FM is due to the Ir ions with strong spin orbital coupling (SOC). The different hysteresis loops reflect that the ionic distribution is not completely homogeneous. The high coercivity ob

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19

Mohan, Rajneesh, Nupinderjeet Kaur, and N. K. Gaur. "Synthesis and Characterization of RuSr2R1.6Ce0.4Cu2O10 (R = Gd, Eu, and Sm) Magnetosuperconductors." International Journal of Superconductivity 2013 (July 29, 2013): 1–6. http://dx.doi.org/10.1155/2013/469280.

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The discovery of the coexistence of superconductivity and weak ferromagnetism in ruthenocuprates like (Ru, R-1222; R = Eu, Gd) and RuSr2GdCu2O8 (Ru-1212) has created a tremendous interest both experimentally as well as theoretically. Here, we have prepared polycrystalline samples of RuSr2R1.4Ce0.6Cu2O10 (R = Gd, Eu, and Sm) by the standard solid state reaction method. These samples were characterized by XRD, SEM, dc resistivity, and squid measurements. All the prepared samples were single phase without any trace of impurity. From the low-temperature resistivity measurement, the samples of (R =

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20

LI, KAI, ANNA SHIN HWA LEE, YONG-WEI ZHANG, and HUI PAN. "ELECTRONIC AND MAGNETIC PROPERTIES OF SILICENE AND SILICANE NANORIBBONS." International Journal of Computational Materials Science and Engineering 02, no. 02 (2013): 1350011. http://dx.doi.org/10.1142/s2047684113500115.

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In this paper, first-principles calculations are carried out to study the electronic and magnetic properties of silicene and silicane nanoribbons, with and without H -passivation at the edges. We predict that the armchair nanoribbons are nonmagnetic and semiconducting. Interestingly, the band gaps of armchair silicene nanoribbons show oscillating behavior as the ribbon width increases. When their edges are passivated with H atoms, However, the oscillating phase is reversed. The zigzag nanoribbons are anti-ferromagnetic and semiconducting in their ground states, except that the zigzag silicane

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21

Hu, Y., Y. L. Song, Y. H. Huang, S. Y. Cao, and Y. Yang. "First-principles predictions of two-dimensional Ce-based ferromagnetic semiconductors: CeF₂ and CeFCl monolayers." RSC Advances 15, no. 3 (2025): 2163–74. https://doi.org/10.1039/d4ra06728b.

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22

Huang, Chengxi, Fang Wu, Shunli Yu, Puru Jena, and Erjun Kan. "Discovery of twin orbital-order phases in ferromagnetic semiconducting VI3 monolayer." Physical Chemistry Chemical Physics 22, no. 2 (2020): 512–17. http://dx.doi.org/10.1039/c9cp05643b.

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23

Yu, Maolin, Xiaofei Liu, and Wanlin Guo. "Novel two-dimensional ferromagnetic semiconductors: Ga-based transition-metal trichalcogenide monolayers." Physical Chemistry Chemical Physics 20, no. 9 (2018): 6374–82. http://dx.doi.org/10.1039/c7cp07912e.

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24

Du, Juan, Congxin Xia, Wenqi Xiong, Tianxing Wang, Yu Jia, and Jingbo Li. "Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures." Nanoscale 9, no. 44 (2017): 17585–92. http://dx.doi.org/10.1039/c7nr06473j.

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25

CAO, WEI, VLADIMIR PANKRATOV, MARKO HUTTULA, LIANA SHIRMANE, YU RAN NIU, and FENG WANG. "X-RAY PHOTOEMISSION ELECTRON MICROSCOPE DETERMINATION OF ORIGINS OF ROOM TEMPERATURE FERROMAGNETISM AND PHOTOLUMINESCENCE IN HIGH Co-CONTENT CoxZn1-xO FILMS." Surface Review and Letters 21, no. 04 (2014): 1450058. http://dx.doi.org/10.1142/s0218625x14500589.

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In this paper, we reported on the X-ray photoemission electron microscope (XPEEM) determination of magnetic and luminescence origins for two Co x Zn 1-x O films. The cobalt fraction x of radio frequency co-sputtered samples were 0.86(2) and 0.92(2), respectively. Films were ferromagnetic and semiconductive. Unique narrow green color lines beside the ZnO intrinsic emissions were found with a decay time in microsecond range at room temperature. Origins of magnetic and luminescence properties were determined with XPEEM. The X-ray absorption near edge structure at the Co L3-edge denoted that Co wa

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26

Mahmood, Asif, Shahid M. Ramay, Waheed Al-Masry, and Ateyah A. Al-Zahrani. "Predicting ferromagnetism and thermoelectric characteristics in bulk spinels ZnCr₂X₄ (X = S, Se) using density functional theory." Physica Scripta 96, no. 12 (2021): 125724. http://dx.doi.org/10.1088/1402-4896/ac39bb.

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Abstract To have control over the properties of electronic devices with the help of the spin of electrons is considered an amalgamation field of innovative technology. The thermoelectric and ferro-magnetic characteristics of bulk ZnCr2X4 (X = S, Se) spinels have been investigated by the BoltzTraP and WIEN2k codes. The optimization of the fully relaxed structures has been performed by PBE generalized gradient approximation (GGA) for the exposure of ground state parameters and our calculated results of lattice constant represent a reasonable agreement with experimental values. The comparative an

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27

Zhang, Jiahui, Xingxing Li, and Jinlong Yang. "Electrical control of carriers' spin orientation in the FeVTiSi Heusler alloy." Journal of Materials Chemistry C 3, no. 11 (2015): 2563–67. http://dx.doi.org/10.1039/c4tc02587c.

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28

Li, Jun, Yuhong Huang, Hongkuan Yuan, and Hong Chen. "Predicted hexagonal titanium nitride monolayer as an intrinsic ferromagnetic semiconductor." European Physical Journal Applied Physics 95, no. 1 (2021): 10601. http://dx.doi.org/10.1051/epjap/2021210025.

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Two-dimensional (2D) magnetic semiconductors have great promising for energy-efficient ultracompact spintronics due to the low-dimensional ferromagnetic and semiconducting behavior. Here, we predict hexagonal titanium nitride monolayer (h-TiN) to be a ferromagnetic semiconductor by investigating stability, magnetism, and carrier transport of h-TiN using the first-principles calculations. The thermodynamical stability of h-TiN is revealed by phonon dispersion, molecular dynamics simulation and formation energy. The energy band structure shows that h-TiN is a ferromagnetic semiconductor with med

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29

Li, Jiling L., Tao He, and Guowei Yang. "Ferromagnetism and semiconducting of boron nanowires." Nanoscale Research Letters 7, no. 1 (2012): 678. http://dx.doi.org/10.1186/1556-276x-7-678.

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30

Guo, Zhaopeng, Qun Chen, Jianan Yuan, Kang Xia, Xiaomeng Wang, and Jian Sun. "Ferromagnetic Semiconducting VI3 Single-Chain Nanowire." Journal of Physical Chemistry C 124, no. 3 (2019): 2096–103. http://dx.doi.org/10.1021/acs.jpcc.9b09757.

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31

Hong, Nguyen Hoa, Alessandro Barla, Joe Sakai, and Nguyen Que Huong. "Can undoped semiconducting oxides be ferromagnetic?" physica status solidi (c) 4, no. 12 (2007): 4461–66. http://dx.doi.org/10.1002/pssc.200777342.

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32

Patil, Sujata, Z. Hossain, P. L. Paulose, R. Nagarajan, L. C. Gupta, and C. Godart. "Ce3Cu3Sb4: The first Ce-based semiconducting ferromagnet." Solid State Communications 99, no. 6 (1996): 419–22. http://dx.doi.org/10.1016/0038-1098(96)00263-3.

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33

dos Santos, Mário Rocha, Paloma Vieira Silva, Vincent Meunier, and Eduardo Costa Girão. "Electronic properties of 2D and 1D carbon allotropes based on a triphenylene structural unit." Physical Chemistry Chemical Physics 23, no. 44 (2021): 25114–25. http://dx.doi.org/10.1039/d1cp00816a.

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Concatenation of triphenylene-like building blocks to construct a triphenylene 2D network, together with a representation of its (I) metallic spin-compensated and (II) anti-ferromagnetic spin-polarized semiconducting configurations.

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34

Alburaih, Huda A., Sadia Nazir, N. A. Noor, A. Laref, and M. Musa Saad H.-E. "Physical properties of vacancy-ordered double perovskites K₂TcZ₆ (Z = Cl, Br) for spintronics applications: DFT calculations." RSC Advances 14, no. 3 (2024): 1822–32. http://dx.doi.org/10.1039/d3ra07603b.

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Our calculated results clearly demonstrate semiconducting ferromagnetic nature of K2TcY6 (Y = Cl, Br) and ultralow values of thermal conductivity (κe) that can prove useful for application of these materials in spintronic and thermoelectric devices.

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35

G. S. Santos, João, Marcio A. Correa, Armando Ferreira, et al. "Magnetic Response Dependence of ZnO Based Thin Films on Ag Doping and Processing Architecture." Materials 13, no. 13 (2020): 2907. http://dx.doi.org/10.3390/ma13132907.

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Multifunctional and multiresponsive thin films are playing an increasing role in modern technology. This work reports a study on the magnetic properties of ZnO and Ag-doped ZnO semiconducting films prepared with a zigzag-like columnar architecture and their correlation with the processing conditions. The films were grown through Glancing Angle Deposition (GLAD) co-sputtering technique to improve the induced ferromagnetism at room temperature. Structural and morphological characterizations have been performed and correlated with the paramagnetic resonance measurements, which demonstrate the exi

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36

Fedorych, O. M., Z. Wilamowski, Marek Potemski, M. Byszewski, and J. Sadowski. "Magnetic order in semiconducting, ferromagnetic Ga1 xMnxAs." Semiconductor Science and Technology 19, no. 4 (2004): S492—S493. http://dx.doi.org/10.1088/0268-1242/19/4/162.

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37

Ashani, Timothy M., Abdullah, Imran Khan, and Jisang Hong. "Giant spin Seebeck in semiconducting ferromagnetic Ga0.5V0.5As." Materials Science in Semiconductor Processing 190 (May 2025): 109354. https://doi.org/10.1016/j.mssp.2025.109354.

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38

Wesselinowa, J. M. "Dynamical properties of thin ferromagnetic semiconducting films." Journal of Magnetism and Magnetic Materials 262, no. 2 (2003): 264–68. http://dx.doi.org/10.1016/s0304-8853(02)01500-7.

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Wesselinowa, J. M. "Phonon damping in ferromagnetic semiconducting thin films." Journal of Magnetism and Magnetic Materials 279, no. 2-3 (2004): 276–82. http://dx.doi.org/10.1016/j.jmmm.2003.12.1425.

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40

Shpaisman, Nava, Uri Givan, Moria Kwiat, Alexander Pevzner, Roey Elnathan, and Fernando Patolsky. "Controlled Synthesis of Ferromagnetic Semiconducting Silicon Nanotubes." Journal of Physical Chemistry C 116, no. 14 (2012): 8000–8007. http://dx.doi.org/10.1021/jp2037944.

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41

Wesselinowa, J. M., L. L. Iliev, and W. Nolting. "Magnetic Properties of Thin Ferromagnetic Semiconducting Films." physica status solidi (b) 214, no. 1 (1999): 165–74. http://dx.doi.org/10.1002/(sici)1521-3951(199907)214:1<165::aid-pssb165>3.0.co;2-n.

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42

Sánchez, R. D., J. Mira, J. Rivas, M. P. Breijo, and M. A. Señarís-Rodríguez. "Magnetoresistance, temporal evolution, and relaxation of the electrical resistivity in the re-entrant semiconducting La0.80Ba0.20CoO3 perovskite." Journal of Materials Research 14, no. 6 (1999): 2533–39. http://dx.doi.org/10.1557/jmr.1999.0339.

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We report here a study on the electrical and magnetic properties of La1−xBaxCoO3 in the re-entrant semiconducting region (x = 0.20). We find that in this material: (i) the insulator-metal-insulator sequence is unstable and evolves toward a purely semiconducting behavior; the initial r versus T curve can be reinstated upon appropriate annealing treatments; (ii) there are relaxation effects that can be seen by changing the polarity of the electrodes; (iii) there is a negative magnetoresistance Δρ/ρ ∼ 2–3%, for a field as low as 9 kOe, especially at the metal-insulating transition temperatures; a

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43

Wesselinowa, J. M. "Electron–phonon interaction in ferromagnetic semiconducting thin films." Journal of Physics: Condensed Matter 17, no. 3 (2005): 507–17. http://dx.doi.org/10.1088/0953-8984/17/3/010.

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44

Granitzer, Petra, Klemens Rumpf, Roberto Gonzalez-Rodriguez, Manfred Nachtnebel, and Jeffery Coffer. "Semiconducting/Ferromagnetic Nanocomposites Investigated By High Temperature FORC." ECS Meeting Abstracts MA2024-02, no. 16 (2024): 1650. https://doi.org/10.1149/ma2024-02161650mtgabs.

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In the frame of this work magnetic interactions between magnetic nanostructures (Ni, Co, NiCo, and Fe3O4) deposited within porous silicon (PSi) and silicon nanotubes (SiNTS) are investigated by first order reversal curves (FORC). Magnetic cross-talk between metal deposits can be controlled by the morphology of the porous silicon (distance between the pores) or silicon nanotubes (wall thickness) and also by the distribution and size of the deposits within the pores. To get a clear knowledge about the magnetic interactions single hysteresis curves are not sufficient and thus first order reversal

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45

Campbell, I. H., and B. K. Crone. "Energy barriers from ferromagnetic contacts to semiconducting polymers." Applied Physics Letters 90, no. 24 (2007): 242107. http://dx.doi.org/10.1063/1.2748842.

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46

Kumar, Pushpendra, and Kedar Singh. "Ferromagnetism in Cu-doped ZnSe semiconducting quantum dots." Journal of Nanoparticle Research 13, no. 4 (2010): 1613–20. http://dx.doi.org/10.1007/s11051-010-9914-5.

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47

Biswas, S., S. Sarkar, D. De, Sk Sabyasachi, A. Bhaumik, and R. Ray. "Semiconducting properties of a ferromagnetic nanocomposite: Fe@ZnO." Indian Journal of Physics 89, no. 7 (2014): 703–8. http://dx.doi.org/10.1007/s12648-014-0642-z.

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Lin, Ming-Wei, Houlong L. Zhuang, Jiaqiang Yan, et al. "Ultrathin nanosheets of CrSiTe3: a semiconducting two-dimensional ferromagnetic material." Journal of Materials Chemistry C 4, no. 2 (2016): 315–22. http://dx.doi.org/10.1039/c5tc03463a.

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Kundu, Shovan Kumar, Dhiraj Kumar Rana, and Soumen Basu. "Observation of room temperature multiferroic and electrical properties in gadolinium ferrite nanoparticles." Modern Physics Letters B 33, no. 21 (2019): 1950243. http://dx.doi.org/10.1142/s0217984919502439.

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Abstract:

The formation and characterization of multiferroic Gadolinium Ferrite (GdFeO3) nanoparticles has been demonstrated in detail. The structural, magnetic, magnetodielectric, ferroelectric, optical and electrical properties are studied at different temperature ranges. Dielectric properties, DC and AC transport properties and dielectric relaxation behavior are analyzed in electrical characterization. XRD pattern confirms the phase formation where crystallite size, lattice strain, etc. are carried out by Rietveld refinement and Williamson–Hall plot. Average particle size is 64 nm, which is calculate

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Nolting, W., and C. Santos. "Ferromagnetic Kondo-lattice model: Application to thin ferromagnetic and semiconducting local moment films." physica status solidi (b) 236, no. 2 (2003): 272–80. http://dx.doi.org/10.1002/pssb.200301666.

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