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Relevant bibliographies by topics / Semiconducting Nanostructures

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Dissertations / Theses

Academic literature on the topic 'Semiconducting Nanostructures'

Author: Grafiati

Published: 7 September 2023

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Dissertations / Theses on the topic "Semiconducting Nanostructures"

1

Buccheri, Alexander. "Modelling the optical properties of semiconducting nanostructures." Thesis, University of Oxford, 2016. https://ora.ox.ac.uk/objects/uuid:67d66b15-c5b1-4bb1-806c-6cc22d0eb482.

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In this thesis we describe the development of a real-space implementation of the Bethe-Salpeter equation (BSE) and use it in conjunction with a semi-empirical tight-binding model to investigate the optoelectronic properties of colloidal quantum- confined nanostructures. This novel implementation exploits the limited radial extent and small size of the atomic orbital basis to treat finite systems containing up to &Tilde;4000 atoms in a fully many-body framework. In the first part of this thesis our tight-binding model is initially benchmarked on zincblende CdSe nanocrystals, before subsequently

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2

Balakrishnan, Kaushik. "Self-assembly of organic semiconducting molecules into one-dimensional nanostructures /." Available to subscribers only, 2008. http://proquest.umi.com/pqdweb?did=1594481341&sid=10&Fmt=2&clientId=1509&RQT=309&VName=PQD.

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3

Brewster, Megan Marie. "The interplay of structure and optical properties in individual semiconducting nanostructures." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/69662.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2011.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from PDF version of thesis. Vita.<br>Includes bibliographical references (p. 163-174).<br>Semiconductor nanostructures exhibit distinct properties by virtue of nano-scale dimensionality, allowing for investigations of fundamental physics and the improvement of optoelectronic devices. Nanoscale morphological variations can drastic

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4

Jones, Eric James Ph D. Massachusetts Institute of Technology. "Nanoscale quantification of stress and strain in III-V semiconducting nanostructures." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/98578.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2015.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 142-149).<br>III-V semiconducting nanostructures present a promising platform for the realization of advanced optoelectronic devices due to their superior intrinsic materials properties including direct band gap energies that span the

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5

Lefeuvre, Emmanuel. "Organized growth of semiconducting one-dimensional nanostructures in vertical porus templates for the fabrication of field effect transistors." Palaiseau, Ecole polytechnique, 2012. https://pastel.archives-ouvertes.fr/pastel-01063869.

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6

Amjadipour, Mojtaba. "Epitaxial graphene growth on 3C-SiC/Si(111): Towards semiconducting graphene." Thesis, Queensland University of Technology, 2018. https://eprints.qut.edu.au/122962/1/Mojtaba_Amjadi%20Pour_Thesis.pdf.

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This project is a step forward in developing advanced two dimensional carbon-based materials for future nanoelectronics applications. It explores a new pathway towards nanoscale graphene fabrication compatible with the current semiconductor industry. Ribbons of graphene have been fabricated on silicon carbide wafers by nanoscale patterning as a first step towards developing graphene circuitry. A technology to decrease the interaction between the substrate and graphene has been developed to improve graphene flatness. The attenuation of electrons from the graphene layer have been also investigat

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7

Bartoš, Dušan. "Nanostrukturované vrstvy polovodivých oxidů kovů v plynových senzorech." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2014. http://www.nusl.cz/ntk/nusl-220925.

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This diploma thesis discusses the gas sensor preparation via anodic oxidation. It names sensor types, deals with the sensing principle of electrochemical sensors in detail and submits sensor parameters. It describes preparation technology and characterization technology methods. In the experimental part, it focuses on both the measurement methodology and the electrochemical oxygen sensor covered with titanium dioxide nanocolumns fabrication. Not the least it discusses acquired research results.

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8

Zhang, Yu. "Fabrication, structural and spectroscopic studies of wide bandgap semiconducting nanoparticles of ZnO for application as white light emitting diodes." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI046.

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La présente thèse étudie les nanoparticules de ZnO incorporées dans une matrice d'acide polyacrylique (PAA) mésosphérique synthétisée via un protocole d'hydrolyse. La structure hybride mésosphérique de ZnO / PAA a précédemment démontré son efficacité pour émettre de la lumière visible dans une large gamme, qui résulte des défauts intrinsèques de niveaux profonds dans les nanocristaux de ZnO. Pour modifier davantage le spectre de photoluminescence (PL) et améliorer le rendement quantique de PL (PL QY) du matériau, le ZnO dopé au métal et le ZnO / PAA revêtu de silice sont fabriqués indépendamme

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9

Savu, Raluca [UNESP]. "Síntese de nanofios de óxidos semicondutores para aplicações em dispositivos ópticos e eletrônicos." Universidade Estadual Paulista (UNESP), 2009. http://hdl.handle.net/11449/100917.

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Made available in DSpace on 2014-06-11T19:31:04Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-11-16Bitstream added on 2014-06-13T19:01:19Z : No. of bitstreams: 1 savu_r_dr_bauru.pdf: 10688901 bytes, checksum: 4c1846c73d88b2e598b43e7a14ea1b7c (MD5)<br>Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)<br>A presente pesquisa teve como principal objetivo a obtenção de estruturas nanométricas de óxido de índio, óxido de estanho e óxido de zinco por evaporação térmica e síntese hidrotérmica e a construção e teste de sensores de gases e de fotodetectores de ultravioleta baseado

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10

Savu, Raluca. "Síntese de nanofios de óxidos semicondutores para aplicações em dispositivos ópticos e eletrônicos /." Bauru : [s.n.], 2009. http://hdl.handle.net/11449/100917.

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Resumo: A presente pesquisa teve como principal objetivo a obtenção de estruturas nanométricas de óxido de índio, óxido de estanho e óxido de zinco por evaporação térmica e síntese hidrotérmica e a construção e teste de sensores de gases e de fotodetectores de ultravioleta baseados nessas nanoestruturas. Foram realizados estudos da influência dos parâmetros experimentais das duas rotas de síntese usadas sobre as morfologias e as propriedades das estruturas. Para a obtenção das camadas nanoestruturadas por evaporação térmica foi especialmente construído um forno tubular que permitiu o controle

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