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Journal articles on the topic "Semiconductor crystal defects":
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Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.
Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.
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Brinkman, W. F. "Electron Microscopy and the Electronics Industry: Partners in Development." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 12–13. http://dx.doi.org/10.1017/s0424820100178811.
Since the invention of the transistor and the birth of the solid-state electronics industry, electron microscopy has been an integral part of the boom in the science and technology of semiconductors. The relationship has been symbiotic: the technique of microscopy has probably gained almost as much as the electronics industry from innovations. Historically, semiconductor research has always come down to a question of the growth of perfect materials with perfect interfaces, and microscopic analysis below the optical level has been essential to improvements. When applications for the semiconductors germanium and silicon were discovered in solid-state devices, its became necessary to grow high-quality single crystals free of defects. A lot of work at Bell Labs and other institutions was directed at understanding the behavior of dislocations in crystals. Bill Schockley, a co-inventor of the transistor, is well-known for his contributions to dislocation theory, particularly dislocation dissociation in semiconductors. Bob Heidenreich, from Bell Labs, contributed much to the early stages of microscopy of defects and dislocations. The need for dislocation-free material generated extensive efforts around the world which led to the growth of high-purity single-crystal silicon in the 1960’s. Silicon is now the highest quality and purest material available, and also the cheapest in single-crystal form.
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McKenan, Stuart, M. Grant Norton, and C. Barry Carter. "Low-energy surfaces and interfaces in aluminum nitride." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 350–51. http://dx.doi.org/10.1017/s0424820100174886.
As a potential semiconductor substrate material, aluminum nitride (AIN) has recently become the subject of much research. In particular, the nature of the defects which occur in this material is yet to be fully understood. The mechanical strength, high thermal conductivity and large electrical resistivity and a relatively small thermal expansion coefficient, of the defect-free, single crystal material make it extremely well suited for use as a semiconductor substrate material. The polycrystalline AIN contains grain- boundaries, second phases, and many internal defects, all of which may produce a degradation in the physical properties of the substrate. The characterization of these microstructural defects in this material is obviously necessary in the understanding of the properties of the polycrystalline material.AIN has the hexagonal, wurtzite structure rather than the cubic structure of the more common semiconductors. It is also a polar material, and many of the polar surfaces are low-index planes. Grain boundaries (and other interfaces) composed of different crystallographic planes may be expected to have different physical and electrical properties. This effect of the crystallography has been investigated by TEM in two ways; firstly, grain boundaries in polycrystalline AIN have been characterized.
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Poklonski, Nikolai A., Aliaksandr N. Dzeraviaha, Sergey A. Vyrko, and Aliaksandr I. Kavaleu. "Migration of electrons via triple-charged defects of crystal matrix." Journal of the Belarusian State University. Physics, no. 1 (January 31, 2020): 41–53. http://dx.doi.org/10.33581/2520-2243-2020-1-41-53.
The study of semiconductor materials with point radiation defects of the crystal structure in three charge states (–1), (0), (+1) is important for determining the conditions of their radiation resistance under the influence of gamma rays, fast electrons, etc. Such defects are self-sufficient to ensure electrical neutrality of the material under conditions of ionization equilibrium, that issue determines the radiation resistance of materials. In silicon and diamond crystals, such irradiation-induced defects during their accumulation stabilize the Fermi level in the vicinity of one third of the band gap from the top of the valence band. The purpose of the work is an analytical description of the stationary hopping electron transfer in a semiconductor, taking into account the joint migration of both the single electrons and the pairs of electrons over these triple-charged defects. A crystalline semiconductor is considered as a matrix containing immobile point defects of one sort in the prevailing concentration. For the first time in the drift-diffusion approximation, a phenomenological theory is constructed of coexisting migration of both the single electrons (transitions from the charge state (–1) to state (0) and from the state (0) to state (+1)), and the electron pairs (transitions from the state (–1) to state (+1)) by means of their hopping between such defects when an external stationary electric field is applied to the semiconductor. In the linear approximation, analytical expressions are obtained for the screening length of a static electric field and the length of the hopping diffusion of electrons migrating via such defects. It is shown that the additional contribution of the hopping transport of electron pairs leads to a decrease in the screening length and also changes the diffusion length.
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Cochrane, J., and P. Carpenter. "Characterization of Semiconductors Grown in a Rotating Magnetic Field." Microscopy and Microanalysis 7, S2 (August 2001): 568–69. http://dx.doi.org/10.1017/s1431927600028919.
Many different techniques have been used in attempts to minimize defects in single crystal semiconductors. This study examines semiconductors grown in the presence of a rotating magnetic field (RMF). The RMF method is commonly used in metallurgy to stir an electrically conducting liquid during the casting process which can reduce the effects of buoyancy driven convection and enhance the mass transfer process. The variation of heat and mass transfer processes by RMF can be controlled by selecting a specific frequency and strength of the magnetic field. Both numerical modeling and space-based crystal growth experiments using RMF indicate that the application of RMF to solidification of semiconductors will dramatically minimize defects and inclusions.A ground based program in the Microgravity Research Division at NASA's Marshall Space Flight Center has been studying the effects of RMF on various semiconductor compounds grown by the traveling heater method (THM).
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Hatada, Hiroki, Masao Nakamura, Masato Sotome, Yoshio Kaneko, Naoki Ogawa, Takahiro Morimoto, Yoshinori Tokura, and Masashi Kawasaki. "Defect tolerant zero-bias topological photocurrent in a ferroelectric semiconductor." Proceedings of the National Academy of Sciences 117, no. 34 (August 10, 2020): 20411–15. http://dx.doi.org/10.1073/pnas.2007002117.
Lattice defect is a major cause of energy dissipation in conventional electric current due to the drift and diffusion motions of electrons. Different nature of current emerges when noncentrosymmetric materials are excited by light. This current, called the shift current, originates from the change in the Berry connection of electrons’ wave functions during the interband optical transition. Here, we demonstrate the defect tolerance of shift current using single crystals of ferroelectric semiconductor antimony sulfoiodide (SbSI). Although the dark conductance spreads over several orders of magnitude in each crystal due to the difference in the density of defect levels, the observed shift current converges to an identical value. We also reveal that the shift current is scarcely disturbed by the surface defects while they drastically suppress the conventional photocurrent. The defect tolerance is a manifestation of the topological nature of shift current, which will be a crucial advantage in optoelectronic applications.
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Segovia-Chaves, Francis, Herbert Vinck-Posada, and Edgar A. Gómez. "Superconducting one-dimensional photonic crystal with coupled semiconductor defects." Optik 209 (May 2020): 164572. http://dx.doi.org/10.1016/j.ijleo.2020.164572.
Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using heterostructural compound semiconductors. Although the compound crystal growth techniques had reached at a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current from the metals to the semiconductors) was still on a trial-and-error basis. Our research efforts have been focused to develop, low resistance, refractory ohmic contact materials using the deposition and annealing techniques for n-GaAs, p-ZnSe, InP, p-SiC p-CdTe etc. It was found the growth of homo- or hetero–epitaxial intermediate semiconductor layers (ISL) was essential for low resistance contact formation. The importance of hetero-structural ISL was given taking an example of n-type ohmic contact for GaAs.
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TESSEMA, GENENE. "STRESS AND TEMPERATURE DEPENDENCE OF THE HYPERFINE INTERACTIONS AT POINT DEFECTS IN SEMICONDUCTORS." International Journal of Modern Physics B 24, no. 09 (April 10, 2010): 1111–27. http://dx.doi.org/10.1142/s0217979210055202.
The resultant electric field gradient (EFG) produced at the nucleus of an atom in a solid can be measured using the perturbed γ – γ angular correlation (PAC) method that employs radioactive probe atoms. Several EFGs, associated with different types of defects trapped by the probe, are reported from the crystal silicon and germanium semiconductors. However, the nature of the field gradients is not fully understood because of the many factors contributing for its properties. The proximity of an impurity atom to the probe in the host matrix particularly played a significant role in the determination of the magnitude of the EFG. We discuss here the temperature and stress dependence of the crystal EFGs caused by impurity trapping as well as by the actions of uniaxial stress on semiconductor substrates.
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Romaka, L. P., P. F. Rogl, A. M. Нoryn, V. Ya Krayovskyy, Yu V. Stadnyk, and V. V. Romaka. "Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution." Фізика і хімія твердого тіла 17, no. 2 (June 15, 2016): 212–21. http://dx.doi.org/10.15330/pcss.17.2.212-221.
The features of structural, energy state and electrokinetic characteristics were investigated for Hf1‑xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a crystallographic site of Hf (5d26s2) atoms by Ni (3d84s2) ones up to ~ 1 % that generates in the crystal structural defects of donor nature. It was shown that introduction of Tm atoms ordered crystal structure (“healing” of structural defects). It was established mechanisms of simultaneous generation of structural defects as acceptors by substitution of Hf (5d26s2) by Tm (4f135d06s2) atoms, and the donor nature defects as a result of the appearance of vacancies in the Sn (4b) atoms sites, which determines the mechanisms of conductivity for Hf1-xTmxNiSn.
DLTS, ODLTS and DLOS have been used to characterise the main deep level trapping centres in some II-VI semiconductors; these were single crystal CdS, (ZnCd)S, CdSe, CdTe and ZnS, and polycrystalline CdS films. Undoped, single crystal CdS contained four electron traps as detected by DLTS, at 0.29eV, 0.41eV, 0.61eV and 0.74eV below the conduction band (CB). The first two were observed in all samples and were due to native defects. The two states of highest energy were found only in material that had been annealed in S or Cd vapours. The 0.61ev level could be photoinduced by illumination at photon energies greater than about 1eV. It decayed in the dark with an activation energy of 0.25eV. The 0.61eV and 0.74eV centres were associated with electrically active extended defects (subgrain boundaries Such samples had dislocation densities of about 10(^10) cm(^-2). Copper was found to be a residual impurity in CdS. It produced two deep hole traps resulting from a crystal field splitting of the Cu d(^9) state. They were detected by ODLTS and DLOS and were found at 0.35eV and 1.lev above the valence band (VB).Introduction of the isoelectronic impurity tellurium into CdS induced a hole repulsive centre at 0.21eV above the VB. This is thought to be an inportant radiative recombination centre. The main electron trap in CdS at 0.41eV was found to shift to higher energy with incorporation of Zn. Replacement of 20% of the Cd with Zn shifted the energy to 0.63eV. The level appeared fixed to the VB and had a similar functional dependence on composition as the band gap. The activation energies of the copper centres observed in CdS remained unchanged with incorporation of Zn up to the composition (^Zn)0.45 (^cd)0.55(^s) showed that the crystal field splitting was constant and that these levels were also pinned to the VB. During the fabrication process of the (ZnCd)S/Cu(_2)S solar cell, a deep level was induced at about 1.2eV below the CB. This is thought to be a recombination centre and one of the contributory factors to the reduction observed in the current collection efficiency of these devices. Polycrystalline CdS films were prepared by silk screen printing (SP) and evaporation. The SP films were annealed at various times and temperatures to improve the crystallinity of the layers. At 640C for 1hr, deep states at 0.16eV and 0.48eV were detected. The levels disappeared when annealed at 670C-700C and a new level was observed at 0.13eV. CdS/Cu(_2)S heterojunctions were prepared on the material sintered at 670C; this induced a further trapping level at 1.1eV and one that was poorly resolved. Copper diffused into the CdS during the fabrication of the device so the states associated with copper were detected at 0.35eV and 1.1eV, The evaporated CdS layers showed that the defect signature was sensitive to the type of substrate. Using Ag instead of the usual SnO(_x), deep states were induced at 0.48eV and 0.98eV below the CB. These Ag-associated impurity centres prevent the indiffusion of Cu during the optimising heat treatment of the CdS/Cu(_2)S heterojunction. This maintains the stoichicmetry of the Cu(_2)S layer, thereby, preventing degradation of the devices. CdSe and copper doped CdSe were found to contain several important defect centres: a native sensitising centre (0.64eV from the VB), a class I recombination centre (0.9eV from the CB), a copper impurity centre (0.2eV from the CB) and two native defects (0.16eVand 0.45eV from the CB). n-type CdTe grown by the Piper-Polich technique contained6 electron traps at 0.15eV, 0.21eV, 0.40eV, 0.47eV, 0.53eV and 0.63eV. Their presence was shown to be dependent upon the method of growth of the crystal by comparing with material grown by other techniques. One or more of these states were thought to be due to extended defects or Te precipitates. Low resistivity ZnS contained two deep electron traps at 0.25eV and O.50eV as detected by DLTS. In addition DLOS showed the presence of four further states at 1.25eV, 1.37eV, 1.89eV and 2.19eV below the CB. The first two are thought to be the strong luminescence centres observed by other workers.
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Armitage, Adam. "The optical study of semiconductor quantum microcavities." Thesis, University of Sheffield, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298971.
MARTINS, JOAO F. T. "Influência de defeitos e da qualidade superficial no desempenho do cristal de iodeto de mercúrio aplicado como detector de radiação." reponame:Repositório Institucional do IPEN, 2015. http://repositorio.ipen.br:8080/xmlui/handle/123456789/25669.
Submitted by Claudinei Pracidelli (cpracide@ipen.br) on 2016-02-03T12:00:17Z
No. of bitstreams: 0 Made available in DSpace on 2016-02-03T12:00:17Z (GMT). No. of bitstreams: 0 Tese (Doutorado em Tecnologia Nuclear) IPEN/T Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
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Islam, Md Minhazul. "Study of defects and doping in β-Ga2O3." Bowling Green State University / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1626237318060463.
Zollondz, Jens-Hendrik. "Electronic characterisation and computer modelling of thin film materials and devices for optoelectronic applications." Thesis, University of Abertay Dundee, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369510.
Idrisi, Hanan [Verfasser], and Bernd O. [Akademischer Betreuer] Kolbesen. "Development of decoration and preferential-etching methods for delineation of crystal defects in semiconductor materials / Hanan Idrisi. Gutachter: Bernd O. Kolbesen. Betreuer: Bernd O. Kolbesen." Frankfurt am Main : Univ.-Bibliothek Frankfurt am Main, 2013. http://d-nb.info/1044094435/34.
King, Philip J. C. "Crystal defect imaging using transmission ion channelling." Thesis, University of Oxford, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358679.
Zhu, Congyong. "Deep level defects study of arsenic implanted ZnO single crystal." Click to view the E-thesis via HKUTO, 2008. http://sunzi.lib.hku.hk/hkuto/record/B40987759.
Zhu, Congyong, and 朱從佣. "Deep level defects study of arsenic implanted ZnO single crystal." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B40987759.
Kearns, Joel K. "Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon." Digital WPI, 2019. https://digitalcommons.wpi.edu/etd-dissertations/514.
Low voltage power electronics are made from dislocation free silicon heavily doped with arsenic or antimony to provide low electrical resistivity. Attempts to grow crystals with decreased resistivity have led to a higher probability of twinning during growth, so that the crystal no longer possesses the required crystallographic orientation for device fabrication. The source of the twins must be identified so that crystal growth process conditions can be designed to eliminate this defect mechanism, allowing lower resistivity crystals to be grown reliably. In lightly doped crystals, twinning was ascribed to presence of carbon impurity or a low probability atomic stacking accident, neither of which should be affected by increased concentration of arsenic or antimony. Crystals that twinned during growth were characterized by resistivity, Laue back-reflection x-ray diffraction, optical and scanning electron microscopy, energy dispersive x-ray spectroscopy, spreading resistance, x-ray computed tomography and electron backscatter diffraction. The twin nucleation site of silicon crystals that were grown heavily doped with arsenic or antimony were compared to lightly doped crystals which twinned, and crystals that exhibited other defects. The initial twinning in the <100> orientation heavily doped crystals occurred from small gas bubbles bursting at a {111} facet at the three phase boundary, and forming a twin orientation domain on that facet. The gas bubbles likely consist of argon, the process gas used during solidification to remove silicon monoxide gas from the growth system. The higher levels of arsenic or antimony dopant may have changed the silicon surface tension, or provided additional impurities into the liquid silicon. Either effect may have changed the number or size of argon bubbles in the liquid silicon, leading to a higher incidence of gas bubbles near the {111} facet during solidification. Similar but smaller crater features were observed on two lightly boron-doped silicon crystals that twinned. Two other lightly doped crystals formed twins from carbon inclusions, consistent with carbon as a cause. Some heavily-doped twinned samples also show high concentrations of metals at the twin nucleation site, which could affect surface energy. Measurement of the geometry of crystal surface-to-facet radius eliminated a recently-proposed twin nucleation theory from consideration. Constitutional supercooling was demonstrated to not be a major contributing factor to twin nucleation. It was shown that deliberately introducing additional arsenic dopant during solidification would nucleate twins, but twins did not occur if only elemental carbon was introduced.
Books on the topic "Semiconductor crystal defects":
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International Symposium on High Purity Silicon (9th 2006 Cancún, Mexico). High purity silicon 9. Edited by Claeys Cor L, Electrochemical Society. Electronics and Photonics Division., and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2006.
International Symposium on High Purity Silicon (8th 2004 Honolulu, Hawaii). High purity silicon VIII: Proceedings of the international symposium. Edited by Claeys Cor L, Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2004.
International Symposium on Silicon Molecular Beam Epitaxy (6th 1995 Strasbourg, France). Selected topics in group IV and II-VI semiconductors: Proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995. Amsterdam: Elsevier, 1996.
Book chapters on the topic "Semiconductor crystal defects":
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Böer, Karl W., and Udo W. Pohl. "Crystal Defects." In Semiconductor Physics, 529–79. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69150-3_15.
Böer, Karl W., and Udo W. Pohl. "Crystal Defects." In Semiconductor Physics, 1–51. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-06540-3_15-1.
Böer, Karl W., and Udo W. Pohl. "Crystal Defects." In Semiconductor Physics, 1–51. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-06540-3_15-2.
Böer, Karl W., and Udo W. Pohl. "Crystal Defects." In Semiconductor Physics, 1–52. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-319-06540-3_15-3.
Böer, Karl W. "Crystal Defects and Interfaces." In Survey of Semiconductor Physics, 431–59. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4615-9744-5_18.
Tedeschi, Davide, Marta De Luca, and Antonio Polimeni. "Photoluminescence Spectroscopy Applied to Semiconducting Nanowires: A Valuable Probe for Assessing Lattice Defects, Crystal Structures, and Carriers’ Temperature." In Fundamental Properties of Semiconductor Nanowires, 289–306. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-9050-4_6.
Buzynin, A. N., N. I. Bletskan, Yu N. Kuznetsov, and N. N. Sheftal’. "Growth Defects in Semiconductor Crystals." In Growth of Crystals, 291–300. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7119-3_29.
Sumino, Koji. "Dislocations in GaAs Crystals." In Defects and Properties of Semiconductors, 3–24. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_1.
Weyher, Jan L., and John J. Kelly. "Defect-Selective Etching of Semiconductors." In Springer Handbook of Crystal Growth, 1453–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_43.
Abe, T., T. Masui, H. Harada, and J. Chikawa. "The Characteristics of Nitrogen in Silicon Crystals." In Defects and Properties of Semiconductors, 185–96. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_12.
Conference papers on the topic "Semiconductor crystal defects":
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Nutsch, Andreas, Tomohiro Funakoshi, Lothar Pfitzner, Robert Steffen, Frank Supplieth, and Heiner Ryssel. "Detection and review of crystal originated surface and sub surface defects on bare silicon." In 2007 International Symposium on Semiconductor Manufacturing. IEEE, 2007. http://dx.doi.org/10.1109/issm.2007.4446898.
Richter, Stefan, Stefan L. Schweizer, Reinald Hillebrand, Cecile Jamois, Ralf B. Wehrspohn, Margit Zacharias, and Ulrich Goesele. "Periodically arranged point defects in a 2D photonic crystal: the photonic analogue to a doped semiconductor." In Microelectronics, MEMS, and Nanotechnology, edited by Chennupati Jagadish, Kent D. Choquette, Benjamin J. Eggleton, Brett D. Nener, and Keith A. Nugent. SPIE, 2004. http://dx.doi.org/10.1117/12.522063.
Lo, Michael, Eoghan Dillon, Qichi Hu, Kevin Kjoller, Roshan Shetty, Craig Prater, and Sean W. King. "AFM-Based Chemical and Mechanical Property Characterization of Interconnects and Defects." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0159.
Abstract Spectroscopic characterization of interconnects and circuits in semiconductor devices has become increasingly complicated as dimensions for breakthroughs and failure analysis are continuously shrinking. To achieve high spatial resolution infrared (IR) spectroscopic information, a pulsed infrared laser can be coupled to an atomic force microscope in the atomic force microscopy IR (AFM-IR) technique. The combination of AFM-IR and Lorentz contact resonance AFM (LCR-AFM) has great potential for providing high spatial resolution chemical and mechanical analysis. To demonstrate the feasibility of the AFM-based techniques, AFM-IR spectrum and images were obtained from the interlayer dielectrics of a test structure at a length scale shorter than the IR wavelength. Using the LCR-AFM technique, the relative mechanical properties of the components could be mapped distinctively by observing the contact resonance of the AFM probe. Finally, preliminary data suggest there may be AFM-IR spectral differences between contamination and the bulk material on a liquid crystal display.
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Yu, Jing-jiang, T. Yamaoka, S. Hasumura, R. Hirose, K. Ando, and K. Mizuguchi. "Environmental Control Scanning Nonlinear Dielectric Microscopy Measurements of p-n Structures, epi-Si Wafers, and SiC Crystal Defects." In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0336.
Abstract Scanning nonlinear dielectric microscopy (SNDM) has improved significantly, achieving low-concentrated observations. Therefore, it is of great interest to observe how adsorbed water and other measurement environments influence SNDM measurements so that the material's dielectric properties can be detected. This study investigates how specific measurement environments, namely air, dry nitrogen, and vacuum environments, influence the SNDM and C-V curve measurements of semiconductor samples. The p-n structure created by ion implantation was measured by applied-DC-voltage SNDM, and in these environments, the corresponding C-V curves were obtained. As with the p-n structure sample, an abnormal result was obtained when a positive DC voltage was applied to an epi-Si sample in air. A low concentration level was clearly measured in vacuum. From these results, it can be concluded that measurement in a high vacuum is an effective way to obtain highly precise carrier distributions.
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Zheng, Guoxiong, Yifan Luo, and Hideo Miura. "Degradation of the Strength of a Grain and a Grain Boundary due to the Accumulation of the Structural Defects of Crystal." In ASME 2018 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/imece2018-87264.
Various brittle fractures have been found to occur at grain boundaries in polycrystalline materials. In thin film interconnections used for semiconductor devices, open failures caused by electro- and strain-induced migrations have been found to be dominated by porous random grain boundaries that consist of a lot of defects. Therefore, it is very important to explicate the dominant factors of the strength of a grain boundary in polycrystalline materials for assuring the safe and reliable operation of various products. In this study, both electron back-scatter diffraction (EBSD) analysis and a micro tensile test in a scanning electron microscope was applied to copper thin film which is used for interconnection of semiconductor devices in order to clarify the relationship between the strength and the crystallinity of a grain and a grain boundary quantitatively. Image quality (IQ) value obtained from the EBSD analysis, which indicates the average sharpness of the diffraction pattern (Kikuchi pattern) was applied to the crystallinity analysis. This IQ value indicates the total density of defects such as vacancies, dislocations, impurities, and local strain, in other words, the order of atom arrangement in the observed area in nano-scale. In the micro tensile test system, stress-strain curves of a single crystal specimen and a bicrystal specimen was measured quantitatively. Both transgranular and intergranular fracture modes were observed in the tested specimens with different IQ values. Based to the results of these experiments, it was found that there is the critical IQ value at which the fracture mode of the bicrystal specimen changes from brittle intergranular fracture at a grain boundary to ductile transgranular fracture in a grain. The strength of a grain boundary increases monotonically with IQ value because of the increase in the total number of rigid atomic bonding. On the other hand, the strength of a grain decreases monotonically with the increase of IQ value because the increase in the order of atom arrangement accelerates the movement of dislocations. Finally, it was clarified that the strength of a grain boundary and a grain changes drastically as a strong function of their crystallinity.
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Yin, Q. R., H. F. Yu, H. R. Zeng, G. R. Li, and A. L. Ding. "High Resolution Acoustic Microscopy with Low Frequency and Its Applications in Analysis of Ferroelectrics." In ISTFA 2005. ASM International, 2005. http://dx.doi.org/10.31399/asm.cp.istfa2005p0228.
Abstract Nondestructive observation of domain structure of ferroelectrics, dynamic behavior under external field and related phenomena is becoming significant. As a nondestructive and subsurface characterizing technique, the authors developed acoustic microscopy based on a commercial scanning probe microscope for direct observation of local ferroelectricity, elasticity and defects on several inorganic functional materials, transparent PLZT ceramics, relax-based PMN-PT crystal and lead-free bismuth titanate ceramics without any special processing (polishing or etching) to the sample. The direct observation is particularly useful and convenient for analyzing ferroelectrics/semiconductor integrated material and devices. The excitation frequency is in the range of several kHz to decades of kHz, which is much lower than that of the traditional acoustic imaging techniques. But several applications of scanning probe acoustic microscope (SPAM) involving ferroelectric samples with the resolution of 10nm were obtained. The expanding scope of application for SPAM shows exciting possibilities for non-destructive analyses in the microelectrics industry.
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Wang, Mu-Chun, Zhen-Ying Hsieh, Kuo-Shu Huang, Shuang-Yuan Chen, and Heng-Sheng Huang. "Back-Side Wafer Grinding Quality Affecting Back-End Assembly Process for LCD Driver ICs." In 2008 Second International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2008. http://dx.doi.org/10.1115/micronano2008-70014.
Die size and thickness of IC substrate typically vary as a result of the various market demands while the semiconductor process and the product applications develop fast. In order to satisfy the market concerns, the improvement of wafer grinding and dicing saw technology is necessary to provide lighter, thinner and more reliable ICs. Generally, most of previous commercial ICs almost demonstrate the square profile, but some special applications such as liquid-crystal-display (LCD) driver ICs request approximate rectangle shape. Furthermore, the ratios of length / width of these drivers are near 14:1, therefore, it is easy to be broken during IC assembly process and induce some reliability defects. However, the growth rate of digital panel displays is gradually increased. This global market is more and more impressed. In this study, how to promote the die strength and investigate the wafer grinding process for the previous LCD products is the main target. Through the analysis of data collection in die sizes, the suitable wafer grinding process is recommended in assembly line and some predictable trends for future panel IC applications are also exposed.
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Inoue, Naohisa, Hidenori Oyama, Kaori Watanabe, Hirofumi Seki, and Yuichi Kawamura. "Behavior of nitrogen in Si crystal during irradiation and post-annealing." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865596.
Giannopoulos, A. V., C. M. Long, and K. D. Choquette. "Decimated photonic crystal membrane defect cavity lasers." In 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC). IEEE, 2010. http://dx.doi.org/10.1109/islc.2010.5642647.
Kishi, Hiroki, Miki Miyazawa, Naoki Matsushima, and Jun Yamauchi. "First-principles core-level X-ray photoelectron spectroscopy calculation on arsenic defects in silicon crystal." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865641.
