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Relevant bibliographies by topics / Semiconductor current stress

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Academic literature on the topic 'Semiconductor current stress'

Author: Grafiati

Published: 5 June 2025

Last updated: 15 July 2025

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Journal articles on the topic "Semiconductor current stress"

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Qin, Guoshuai, Chunsheng Lu, Xin Zhang, and Minghao Zhao. "Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics." Materials 11, no. 10 (2018): 2000. http://dx.doi.org/10.3390/ma11102000.

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In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture c

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Morgan, Adam, Ankan De, Haotao Ke, et al. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode." International Symposium on Microelectronics 2015, no. 1 (2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.

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The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencie

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Zhou, Dao, Yingzhou Peng, Francesco Iannuzzo, Michael Hartmann, and Frede Blaabjerg. "Thermal Mapping of Power Semiconductors in H-Bridge Circuit." Applied Sciences 10, no. 12 (2020): 4340. http://dx.doi.org/10.3390/app10124340.

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In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading

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Chen, Jun, Takashi Sekiguchi, Masami Takase, et al. "Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs." Solid State Phenomena 156-158 (October 2009): 461–66. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.461.

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We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model

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Harimon, M. A., A. Ponniran, A. N. Kasiran, and H. H. Hamzah. "A Study on 3-phase Interleaved DC-DC Boost Converter Structure and Operation for Input Current Stress Reduction." International Journal of Power Electronics and Drive Systems (IJPEDS) 8, no. 4 (2017): 1948. http://dx.doi.org/10.11591/ijpeds.v8.i4.pp1948-1953.

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This paper analyses a 3-phase interleaved DC-DC boost converter for the conversion of low input voltage with high input current to higher DC output voltage. The operation of the 3-phase interleaved DC-DC boost converter with multi-parallel of boost converters is controlled by interleaved of switching signals with 120 degrees phase-shifted. Therefore, with this circuit configuraion, high input current is evenly shared among the parallel units and consequently the current stress is reduced on the circuit and semiconductor devices and contributes reduction of overall losses. The simulation and ha

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Kaiser, Daniel, Swapnadip Ghosh, Sang M. Han, and Talid Sinno. "Modeling and simulation of compositional engineering in SiGe films using patterned stress fields." Molecular Systems Design & Engineering 1, no. 1 (2016): 74–85. http://dx.doi.org/10.1039/c6me00017g.

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Semiconductor alloys such as silicon–germanium (SiGe) offer attractive environments for stress-driven compositional engineering of quantum-confined structures that are the basis for a host of current and future optoelectronic devices.

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Meraj, Sheikh Tanzim, Nor Zaihar Yahaya, Molla Shahadat Hossain Lipu, et al. "A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga2O3 Semiconductors: Modelling and Performance Analysis." Micromachines 12, no. 12 (2021): 1466. http://dx.doi.org/10.3390/mi12121466.

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In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga2O3) devices. The hybridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide bandgap (UWBG) semiconductors are still in the early-stage, and they are highly expensive. In the proposed ANPC topology, the Si devices are operated at a low switching frequency, while the Ga2O3 switches are operated at a higher switching frequency. The proposed ANPC mitigates the fault current in the s

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Daus, Alwin, Songyi Han, Stefan Knobelspies, Giuseppe Cantarella, and Gerhard Tröster. "Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil." Materials 11, no. 9 (2018): 1672. http://dx.doi.org/10.3390/ma11091672.

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In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge 2 Sb 2 Te 5 (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works on GST TFTs have typically shown poor current modulation capabilities with ON/OFF ratios ≤20 and non-saturating output characteristics. By reducing the GST thickness to 5 nm, we achieve ON/OFF ratios up to ≈300 and a channel pinch-off leading to drain current saturation. We compare the GST TFTs in their amorphous (as deposited) state and in their crystalline (annealed a

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Yum, J. H., J. Oh, Todd W. Hudnall, C. W. Bielawski, G. Bersuker, and S. K. Banerjee. "Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices." Active and Passive Electronic Components 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/359580.

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In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance a

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Marrakh, R., and A. Bouhdada. "Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics." Active and Passive Electronic Components 24, no. 3 (2001): 187–99. http://dx.doi.org/10.1155/2001/18731.

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In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects generated during stress time are simulated by a spatio-temporal gaussian distribution. The parasitic source and drain resistances are included. We also investigate the impact of the interface charge density, generated during stress, on the transconductance. Simulation results show a significant degradation of the drain current versus stress time.

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Dissertations / Theses on the topic "Semiconductor current stress"

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Hartnett, Kathleen A. "Streak camera analysis of dynamic characteristics of current modulated diode laser arrays /." Full text open access at:, 1988. http://content.ohsu.edu/u?/etd,160.

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Choi, Youn Sung. "Impact of mechanical stress on silicon and germanium metal-oxide-semiconductor devices channel mobility, gate tunneling currents, threshold voltage, and gate stack /." [Gainesville, Fla.] : University of Florida, 2008. http://purl.fcla.edu/fcla/etd/UFE0022864.

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Goguenheim, Didier. "CONTRIBUTION A L'ETUDE DE LA FIABILITE DES OXYDES MINCES DANS LES STRUCTURES MOS." Habilitation à diriger des recherches, Université de Provence - Aix-Marseille I, 2006. http://tel.archives-ouvertes.fr/tel-00421746.

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Ce manuscrit expose des travaux effectués entre 1994 et 2004 sur la fiabilité des composants à base de structures MOS et la fiabilité des oxydes ultra-minces de SiO2 (<10nm) utilisés comme isolant de grille dans ces composants. Nous avons établi un lien entre courants de fuite dans l'oxyde (SILC) et injection de porteurs chauds, principalement les trous chauds, dans les oxydes de 3.8 et 4.7nm. La dépendance en champ et en température du SILC soutient un modèle d'effet tunnel assisté par des défauts neutres barycentriques dans l'oxyde, même si une composante partielle de type Schottky est ident

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Zabihi, Sasan. "Flexible high voltage pulsed power supply for plasma applications." Thesis, Queensland University of Technology, 2011. https://eprints.qut.edu.au/48137/1/Sasan_Zabihi_Sheykhrajeh_Thesis.pdf.

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Demands for delivering high instantaneous power in a compressed form (pulse shape) have widely increased during recent decades. The flexible shapes with variable pulse specifications offered by pulsed power have made it a practical and effective supply method for an extensive range of applications. In particular, the release of basic subatomic particles (i.e. electron, proton and neutron) in an atom (ionization process) and the synthesizing of molecules to form ions or other molecules are among those reactions that necessitate large amount of instantaneous power. In addition to the decompositi

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近藤, 博基, 幸夫安田, 鎭明財満, 朗. 酒井 та 浩也池田. "単一電子トラップ直視技術の開発とそれを用いた極薄ゲート絶縁膜の劣化機構の解明". 2005. http://hdl.handle.net/2237/13129.

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Books on the topic "Semiconductor current stress"

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Bader, Samuel D., Robert Hull, Eric H. Chason, and Eric A. Stach. Current Issues in Heteropitaxial Growth Vol. 696: Stress Relaxation and Self Assembly. University of Cambridge ESOL Examinations, 2014.

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Book chapters on the topic "Semiconductor current stress"

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Groos, G., N. Jensen, M. Denison, and M. Stecher. "Simulation of the Cross-Coupling among Snap Back Devices under Transient High Current Stress." In Simulation of Semiconductor Processes and Devices 2004. Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_48.

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Stanislaus Okeke, Izunna, Priscilla Yahemba Aondona, Amoge Chidinma Ogu, Eugene Echeweozo, and Fabian Ifeanyichukwu Ezema. "Role of Surface Defects and Optical Band-gap Energy on Photocatalytic Activities of Titanate-based Perovskite Nanomaterial." In Recent Advances in Perovskite Materials [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.106253.

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In recent years, water pollution has become one of the major challenges faced by humans because of consistent rise in population and industrial activities. Water pollution due to discharge from cosmetics and pharmaceutical wastes, organic dyes, and heavy metal seen as carcinogens has the potential to disrupt hormonal processes in the body. Different approaches such as chlorination, aerobic treatment, aeration, and filtration have been deployed to treat wastewaters before being discharged into the streams, lakes, and rivers. However, more attention has been accorded to treatment approaches that involve use of nanomaterial due to non-secondary pollution, energy efficiency, and ease of operation. Titanate-based perovskite (TBP) is one of the most frequently studied nanomaterials for photocatalytic applications because of its stability and flexibility in optical band-gap modification. This chapter provided an overview of basic principles and mechanisms of a semiconductor photocatalyst, and current synthesis techniques that have been used in formulating TBP nanomaterial. The effect of reaction conditions and approaches such as doping, codoping, composites, temperature, pH, precursor type, surface area, and morphology on surface defects and optical band-gap energy of TBP nanomaterial was highlighted. Importantly, the impact of surface defects and optical band-gap energy of TBP on its photocatalytic activities was discussed. Finally, how to enhance the degradation efficiency of TBP was proposed.

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Crane, Hewitt, Edwin Kinderman, and Ripudaman Malhotra. "Energy Needs to 2050." In A Cubic Mile of Oil. Oxford University Press, 2010. http://dx.doi.org/10.1093/oso/9780195325546.003.0012.

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Having looked at the evolution of energy use and the current state of the energy industry in the previous chapters, we are now ready to make some projections for the future. As the famous Danish physicist Niels Bohr once said, “Prediction is very difficult, especially about the future.” Forecasts of human activity are fraught with uncertainty. This is clearly true of energy forecasts, given that regional and national economic, political, and social trends can change world energy use, as can scientific discoveries and engineering developments unanticipated when the forecast was made. Among the technological changes that have had the largest impact on our pattern of energy consumption, perhaps foremost is the development of the internal combustion engine in transportation, and the accompanying enormous increase in the use of petroleum. The mobility afforded to individuals by automobiles, trains, and later by airplanes greatly shrunk the world, bringing people and economies closer together but also in many cases, unfortunately, helping precipitate international conflicts. Perhaps equally important has been the rise in the use of electricity. The development of the electric power system and its extension beyond urban areas profoundly influenced the daily lives of everyone touched by it. Likewise, the discovery of semiconductors and their application in information technologies, including computers, the Internet, wireless personal communication, and space-based global communication, have altered the way we interact with one another and our surroundings. While the use of these technologies has increased the demand for energy—particularly electricity—it has also contributed immensely to our productivity and thus at the same time helped mitigate the increase. The discovery of atomic fission and its uses in peace and in war have had ramifications in the technological and geopolitical realm. Following the Second World War, great optimism prevailed as exemplified by the statement in 1954 attributed to Lewis Strauss, then chairman of the U.S. Atomic Energy Commission, that nuclear power will be “too cheap to meter.” The ability of nuclear power to deliver electricity abundantly and cheaply helped it become a significant contributor to global primary energy within 20 years.

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Conference papers on the topic "Semiconductor current stress"

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Yue, Junlan, Feijie Huang, Jiahe Wang, Qiulei Hu, Zhijie Ruan, and Yonghu Ma. "Multi-Variable Analysis of Current Carrying Characteristics and Solder Joint Thermal Stress in TSV Structures of Integrated Circuits." In 2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET). IEEE, 2024. https://doi.org/10.1109/isset62871.2024.10779708.

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Liu, Ziyuan, Hao Xu, Jiajie Li, and Weiling Guo. "Research on Lifetime and Reliability of Deep Ultraviolet LEDs under Current Stress with Different Sizes and Packaging Methods." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835306.

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Gholizadeh, Hossein, Mohammad Hamed Samimi, and Jose Rodriguez. "A Non-isolated Ultra High-Step-Up DC-DC converter with Low Semiconductors’ Voltage and Current Stresses Suitable for High-Voltage Applications." In IECON 2024 - 50th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2024. https://doi.org/10.1109/iecon55916.2024.10984004.

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Atanassova, E., A. Paskaleva, and D. Spassov. "Constant Voltage Stress Induced Current in Ta2O5 Stacks." In 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM). IEEE, 2008. http://dx.doi.org/10.1109/asdam.2008.4743358.

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Uchida, T., H. Takashino, M. Tanizawa, et al. "Simulation of Drain Current Reduction Caused by Process-Induced Stress." In 2005 International Conference On Simulation of Semiconductor Processes and Devices. IEEE, 2005. http://dx.doi.org/10.1109/sispad.2005.201507.

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Chen, Chung-hsu, Dave Wang, Daniel Hou, et al. "The Impact of AlN Spacer on Forward Gate Current and Stress-Induced Leakage Current (SILC) of GaN HEMT." In 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2016. http://dx.doi.org/10.1109/csics.2016.7751071.

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Lelis, A., R. Green, D. Habersat, and N. Goldsman. "On-state current stress-induced subthreshold I–V instability in SiC DMOSFETs." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378036.

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Zhu, Zhengyun, Na Ren, Hongyi Xu, et al. "Degradation of 4H-SiC MOSFET body diode under repetitive surge current stress." In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2020. http://dx.doi.org/10.1109/ispsd46842.2020.9170166.

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Qian, Qinsong, Weifeng Sun, Siyang Liu, et al. "Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions." In 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2012. http://dx.doi.org/10.1109/ispsd.2012.6229083.

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Yandong He, Lin Han, Ganggang Zhang, and Xing Zhang. "Correlation between MR-DCIV current and high-voltage-stress-induced degradation in LDMOSFETs." In 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2013. http://dx.doi.org/10.1109/ispsd.2013.6694426.

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