Relevant bibliographies by topics / Semiconductor device modeling

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Semiconductor device modeling'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Semiconductor device modeling.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Semiconductor device modeling"

1

Vasileska, D., D. Mamaluy, H. R. Khan, K. Raleva, and S. M. Goodnick. "Semiconductor Device Modeling." Journal of Computational and Theoretical Nanoscience 5, no. 6 (2008): 999–1030. http://dx.doi.org/10.1166/jctn.2008.2538.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Schöll, Eckehard. "Modeling Nonlinear and Chaotic Dynamics in Semiconductor Device Structures." VLSI Design 6, no. 1-4 (1998): 321–29. http://dx.doi.org/10.1155/1998/84685.

Full text
Abstract:
We review the modeling and simulation of electrical transport instabilities in semiconductors with a special emphasis on recent progress in the application to semiconductor microstructures. The following models are treated in detail: (i) The dynamics of current filaments in the regime of low-temperature impurity breakdown is studied. In particular we perform 2D simulations of the nascence of a filament upon application of a bias voltage. (ii) Vertical electrical transport in layered semiconductor structures like the heterostructure hot electron diode is considered. Periodic as well as chaotic
APA, Harvard, Vancouver, ISO, and other styles
3

IÑIGUEZ, BENJAMIN, TOR A. FJELDLY, MICHAEL S. SHUR, and TROND YTTERDAL. "SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES." International Journal of High Speed Electronics and Systems 09, no. 03 (1998): 725–81. http://dx.doi.org/10.1142/s0129156498000312.

Full text
Abstract:
We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. We emphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including deep sub-micrometer devices. Such an approach is needed in order to accurately describe and predict both stationary and dynamic device behavior and to make the models suitable for implementation in advanced computer aided design tool including cir
APA, Harvard, Vancouver, ISO, and other styles
4

Górecki, Paweł. "Compact Thermal Modeling of Power Semiconductor Devices with the Influence of Atmospheric Pressure." Energies 15, no. 10 (2022): 3565. http://dx.doi.org/10.3390/en15103565.

Full text
Abstract:
The efficiency of the heat dissipation process generated in semiconductor devices depends on many factors, related both to the parameters of the cooling system and environmental factors. Regarding the latter factors, ambient temperature and volume in which the device operates are typically indicated as the most important. However, in the case of the operation of semiconductor devices in non-standard conditions, e.g., in stratospheric airships, the thermal parameters of the device are significantly affected by a low value of atmospheric pressure. This paper presents a compact thermal model of a
APA, Harvard, Vancouver, ISO, and other styles
5

Mantooth, H. A., S. Ahmed, and S. S. Ang. "Power Semiconductor Device Modeling and Simulation." ECS Transactions 58, no. 4 (2013): 391–98. http://dx.doi.org/10.1149/05804.0391ecst.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Geistlinger, Helmut. "Device modeling of semiconductor gas sensors." Sensors and Actuators B: Chemical 14, no. 1-3 (1993): 685–86. http://dx.doi.org/10.1016/0925-4005(93)85144-y.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Hurst, S. L. "Introduction to semiconductor device yield modeling." Microelectronics Journal 24, no. 5 (1993): 589. http://dx.doi.org/10.1016/0026-2692(93)90136-3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Dimitrijev, S., and N. Stojadinović. "Introduction to semiconductor device yield modeling." Microelectronics Journal 25, no. 3 (1994): 249. http://dx.doi.org/10.1016/0026-2692(94)90016-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Prijić, Z. D., and S. Z. Mijalković. "Advanced semiconductor device physics and modeling." Microelectronics Journal 25, no. 8 (1994): 768. http://dx.doi.org/10.1016/0026-2692(94)90142-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Dimitrijev, S., and N. Stojadinović. "Introduction to semiconductor device yield modeling." Microelectronics Reliability 34, no. 10 (1994): 1696. http://dx.doi.org/10.1016/0026-2714(94)90056-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "Semiconductor device modeling"

1

Shea, Patrick. "DESIGN AND MODELING OF RADIATION HARDENED LDMOSFET FOR SPACE CRAFT POWER SYSTEMS." Master's thesis, University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2822.

Full text
Abstract:
NASA missions require innovative power electronics system and component solutions with long life capability, high radiation tolerance, low mass and volume, and high reliability in space environments. Presently vertical double-diffused MOSFETs (VDMOS) are the most widely used power switching device for space power systems. It is proposed that a new lateral double-diffused MOSFET (LDMOS) designed at UCF can offer improvements in total dose and single event radiation hardness, switching performance, development and manufacturing costs, and total mass of power electronics systems. Availability of
APA, Harvard, Vancouver, ISO, and other styles
2

Bürgler, Josef Franz. "Discretization and grid adaptation in semiconductor device modeling /." [S.l.] : [s.n.], 1990. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=9146.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Zhang, Minya. "Optoelectronic device modeling using field simulation techniques." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0005/NQ42892.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Chang, Ruey-dar. "Physics and modeling of dopant diffusion for advanced device applications /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Lee, Brian 1975. "Exploring semiconductor device parameter space using rapid analytical modeling." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/47431.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Litsios, James. "A modeling language for mixed circuit and semiconductor device simulation /." [S.l.] : [s.n.], 1996. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=11412.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Benhsaien, Abdessamad. "Self-assembled quantum dot semiconductor nanostructures modeling: Photonic device applications." Thesis, University of Ottawa (Canada), 2006. http://hdl.handle.net/10393/27225.

Full text
Abstract:
A microscopic analysis of a vertical stack of self-assembled InAs/GaAs lens-shaped quantum dot nanostructures is presented. The analysis revolves around a rigorous Hamiltonian formulation of an eight-band k.p. perturbation to account for the lattice-mismatch strain endured by the islands. The numerical implementation yields the effective bandgap energy and electronic structure of an InAs/GaAs quantum dot. Within the framework of a resonant two-level energy system, material gain and absorption spectra are calculated up to a third-order susceptibility to include nonlinearity. The material gain
APA, Harvard, Vancouver, ISO, and other styles
8

Weber, Michael Thomas. "Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7500.

Full text
Abstract:
The objective of this research has been the study of device properties for emerging wide-bandgap cubic-phase semiconductors. Though the wide-bandgap semiconductors have great potential as high-power microwave devices, many gaps remain in the knowledge about their properties. The simulations in this work are designed to give insight into the performance of microwave high-power devices constructed from the materials in question. The simulation are performed using a Monte Carlo simulator which was designed from the ground up to include accurate, numerical band structures derived from an empirical
APA, Harvard, Vancouver, ISO, and other styles
9

Fu, Yue. "Modeling,Design,and Characterization of Monolithic Bi-directional Power Semiconductor Switch." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3778.

Full text
Abstract:
Bidirectional power switching devices are needed in many power management applications, particularly in lithium-ion battery protection circuitry. A monolithic bidirectional power switch fabricated with a simplified CMOS technology is introduced in this dissertation. Throughout the design process, ISE TCAD tool plays an important role. Design variables are carefully analyzed to improve the device performance or yield the best trade off. Optimization is done with the help of TCAD simulation and theoretical calculations. The device has been successfully fabricated using simplified 0.5 micron CMOS
APA, Harvard, Vancouver, ISO, and other styles
10

Fan, Qian. "GaN heterojunction FET device Fabrication, Characterization and Modeling." VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/35.

Full text
Abstract:
This dissertation is focused on the research efforts to develop the growth, processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation velocity, which make it very promising for the high power and microwave applications. Although enormous progress has been made on GaN transistors in the past decades, the technologies for nitride transistors are still not mature, esp
APA, Harvard, Vancouver, ISO, and other styles

Books on the topic "Semiconductor device modeling"

1

Ferris-Prabhu, Albert V. Introduction to semiconductor device yield modeling. Artech House, 1992.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Kwyro, Lee, ed. Semiconductor device modeling for VLSI. Prentice Hall, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Paolo, Antognetti, and Massobrio Giuseppe, eds. Semiconductor device modeling with SPICE. McGraw-Hill, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Paolo, Antognetti, ed. Semiconductor device modeling with SPICE. 2nd ed. McGraw-Hill, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Advanced semiconductor device physics and modeling. Artech House, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Bürgler, Josef F. Discretization and grid adaptation in semiconductor device modeling. Hartung-Gorre, 1990.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Litsios, James. A modeling language for mixed circuit and semiconductor device simulation. Hartung-Gorre, 1996.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Meinecke, Stefan. Spatio-Temporal Modeling and Device Optimization of Passively Mode-Locked Semiconductor Lasers. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-96248-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

T, Dunham S., and Nelson Jeffrey S, eds. Semiconductor process and device performance modeling: Symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A. Materials Research Society, 1998.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Snowden, Christopher M., ed. Semiconductor Device Modelling. Springer London, 1989. http://dx.doi.org/10.1007/978-1-4471-1033-0.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Semiconductor device modeling"

1

Titinet, G. Clerico, and P. M. Scalafiotti. "Temperature Distribution on GaAs MESFETs: Thermal Modeling and Experimental Results." In Semiconductor Device Reliability. Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_28.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Markowich, Peter A. "Mathematical Modeling of Semiconductor Devices." In The Stationary Semiconductor Device Equations. Springer Vienna, 1986. http://dx.doi.org/10.1007/978-3-7091-3678-2_2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Friedman, Avner. "Asymptotic Methods in Semiconductor Device Modeling." In The IMA Volumes in Mathematics and Its Applications. Springer New York, 1988. http://dx.doi.org/10.1007/978-1-4615-7399-9_9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Friedman, Avner. "Multiple solutions in semiconductor device modeling." In The IMA Volumes in Mathematics and Its Applications. Springer New York, 1989. http://dx.doi.org/10.1007/978-1-4615-7402-6_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Avrutin, Eugene, and Julien Javaloyes. "Mode-Locked Semiconductor Lasers." In Handbook of Optoelectronic Device Modeling and Simulation. CRC Press, 2017. http://dx.doi.org/10.4324/9781315152318-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Connelly, Michael J. "Semiconductor Optical Amplifier Fundamentals." In Handbook of Optoelectronic Device Modeling and Simulation. CRC Press, 2017. http://dx.doi.org/10.1201/9781315152301-20.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Tijero, José-Manuel G., Antonio Pérez-Serrano, Gonzalo del Pozo, and Ignacio Esquivias. "Tapered Semiconductor Optical Amplifiers." In Handbook of Optoelectronic Device Modeling and Simulation. CRC Press, 2017. http://dx.doi.org/10.1201/9781315152301-22.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Lilja, Klas. "Modeling the Limits of Stable Device Behaviour." In Power Semiconductor Devices and Circuits. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3322-1_7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Lingnau, Benjamin, and Kathy Lüdge. "Quantum-Dot Semiconductor Optical Amplifiers." In Handbook of Optoelectronic Device Modeling and Simulation. CRC Press, 2017. http://dx.doi.org/10.1201/9781315152301-23.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Gupta, Yogendra, Niketa Sharma, Ashish Sharma, and Harish Sharma. "Machine Learning Algorithms for Semiconductor Device Modeling." In VLSI and Hardware Implementations Using Modern Machine Learning Methods. CRC Press, 2021. http://dx.doi.org/10.1201/9781003201038-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Semiconductor device modeling"

1

Moloney, J. V. "Semiconductor laser device modeling." In Fundamental issues of nonlinear laser dynamics. AIP, 2000. http://dx.doi.org/10.1063/1.1337763.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Abe, Katsumi, Kazuki Ota, and Takeshi Kuwagaki. "Device Modeling of Oxide Semiconductor TFTs." In 2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2020. http://dx.doi.org/10.23919/am-fpd49417.2020.9224488.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Horn, Jason, David E. Root, and Gary Simpson. "GaN Device Modeling with X-Parameters." In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2010. http://dx.doi.org/10.1109/csics.2010.5619691.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Adler, M. S., D. N. Pattanayak, B. J. Baliga, V. A. K. Temple, and H. R. Chang. "Device physics and modeling of integrated power devices." In [1987] NASECODE V: Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits. IEEE, 1987. http://dx.doi.org/10.1109/nascod.1987.721121.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

LAKE, ROGER, DEJAN JOVANOVIC, and CRISTIAN RIVAS. "NON-EQUILIBRIUM GREEN’S FUNCTIONS IN SEMICONDUCTOR DEVICE MODELING." In Proceedings of the Conference. WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812705129_0013.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Woods, Beth O., H. Alan Mantooth, and John D. Cressler. "SiGe HBT compact modeling for extreme temperatures." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422239.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Rusak, Tal, Akin Akturk, and Neil Goldsman. "Numerical modeling of nanotube embedded chemicapacitive sensors." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422247.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Wei Zhao, Xia Li, Matt Nowak, and Yu Cao. "Predictive technology modeling for 32nm low power design." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422430.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Joong-sik Kim and Taeyoung Won. "Two-Dimensional Quantum Mechanical Modeling for Multiple-Channel FinFET." In 2005 International Semiconductor Device Research Symposium. IEEE, 2005. http://dx.doi.org/10.1109/isdrs.2005.1596127.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Dobes, Josef, and Ladislav Pospisil. "Modeling special high frequency devices using artificial neural networks." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422303.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Semiconductor device modeling"

1

Grubin, H. L. Physics and Modeling of Compound SemiConductor Devices with Semi-Insulating and Native-Oxide Layers. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada405684.

Full text
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography