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Relevant bibliographies by topics / Semiconductor Device Physics / Dissertations / Theses

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Dissertations / Theses on the topic 'Semiconductor Device Physics'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Gilman, J. M. A. "Device applications of low-dimensional semiconductor structures." Thesis, University of Newcastle Upon Tyne, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315599.

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2

Ying-jian, Wu. "Fully coupled electrothermal modelling of semiconductor device." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308189.

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3

Chang, Ruey-dar. "Physics and modeling of dopant diffusion for advanced device applications /." Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.

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4

Wanger, Darcy Deborah. "Translating semiconductor device physics into nanoparticle films for electronic applications." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91117.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemistry, 2014.<br>Cataloged from PDF version of thesis. Vita.<br>Includes bibliographical references (pages 175-187).<br>This thesis explores and quantifies some of the important device physics, parameters, and mechanisms of semiconductor nanocrystal quantum dot (QD) electronic devices, and photovoltaic devices in particular. This involves a variety of characterization techniques and their adaptations, as well as careful evaluation of their results to assure the validity of assumptions. Chapter 1 provides an introduction of

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5

Hontz, Michael Robert. "Next Generation Integrated Behavioral and Physics-based Modeling of Wide Bandgap Semiconductor Devices for Power Electronics." University of Toledo / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1556718365514067.

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6

Boyd, Darren Ray. "A Multi-Physics Computational Approach to Simulating THz Photoconductive Antennas with Comparison to Measured Data and Fabrication of Samples." UKnowledge, 2014. http://uknowledge.uky.edu/ece_etds/39.

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The frequency demands of radiating systems are moving into the terahertz band with potential applications that include sensing, imaging, and extremely broadband communication. One commonly used method for generating and detecting terahertz waves is to excite a voltage-biased photoconductive antenna with an extremely short laser pulse. The pulsed laser generates charge carriers in a photoconductive substrate which are swept onto the metallic antenna traces to produce an electric current that radiates or detects a terahertz band signal. Therefore, analysis of a photoconductive antenna requires s

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7

Yü, Chi. "Nonlinear Dynamics of Semiconductor Device Circuits and Characterization of Deep Energy Levels in HgCdTe by Using Magneto-Optical Spectroscopy." Thesis, University of North Texas, 1994. https://digital.library.unt.edu/ark:/67531/metadc278165/.

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The nonlinear dynamics of three physical systems has been investigated. Diode resonator systems are experimentally shown to display a period doubling route to chaos, quasiperiodic states, periodic locking states, and Hopf bifurcation to chaos. Particularly, the transition from quasiperiodic states to chaos in line-coupled systems agrees well with the Curry-Yorke model. The SPICE program has been modified to give realistic models for the diode resonator systems.

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8

Hudson, Andrew Ian. "Output limitations to single stage and cascaded 2-2.5μm light emitting diodes". Thesis, University of Iowa, 2014. https://ir.uiowa.edu/etd/1468.

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Since the advent of precise semiconductor engineering techniques in the 1960s, considerable effort has been devoted both in academia and private industry to the fabrication and testing of complex structures. In addition to other techniques, molecular beam epitaxy (MBE) has made it possible to create devices with single mono-layer accuracy. This facilitates the design of precise band structures and the selection of specific spectroscopic properties for light source materials. The applications of such engineered structures have made solid state devices common commercial quantities. These applica

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9

Kantha, Deependra. "Hydrodynamic Pumping of a Quantum Fermi Liquid in a Semiconductor Heterostructure." Ohio University / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1040067813.

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10

Pulya, Ravishankar Sandheep. "Device Modelling of Perovskite Solar Cells using Small Perturbation Methods." Doctoral thesis, Universitat Jaume I, 2019. http://hdl.handle.net/10803/667627.

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Perovskite solar cells (PSC) have emerged as an important player in the search for producing c1ean and renewable energy at high efficiencies. However, there exist several bottlenecks to maximise their efficiency and stability. This thesis explores the physical mechanisms related to these limitations in operation and provides a deeper understanding as to how to overcome them. Through systematic experiments based on the small perturbation methods of Impedance Spectroscopy (IS) and Intensity Modulated Photocurrent Spectroscopy (IMPS), the perovskite/selective contact interfaces are identified

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11

Huang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.

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Light emitting transistors (LETs) and transistor lasers (TLs) are newly-emerging optoelectronic devices capable of emitting spontaneous or stimulated light while performing transistor actions. This dissertation describes the design, growth, and performances of long wavelength LETs and TLs based on InAlGaAs/InP material system. First, the doping behaviors of zinc (Zn) and carbon (C) in InAlGaAs layers for p-type doping were investigated. Using both dopants, the N-InP/p-In0.52(AlxGa1-x)0.48As/N-In0.52Al0.48As LETs with InGaAs quantum wells (QWs) in the base demonstrate both light emission and

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12

Walker, Alexandre W. "Bandgap Engineering of Multi-Junction Solar Cells for Enhanced Performance Under Concentration." Thèse, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/26240.

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This doctorate thesis focuses on investigating the parameter space involved in numerically modeling the bandgap engineering of a GaInP/InGaAs/Ge lattice matched multi-junction solar cell (MJSC) using InAs/InGaAs quantum dots (QDs) in the middle sub-cell. The simulation environment – TCAD Sentaurus – solves the semiconductor equations using finite element and finite difference methods throughout well-defined meshes in the device to simulate the optoelectronic behavior first for single junction solar cells and subsequently for MJSCs with and without quantum dots under concentrated illumination o

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13

Growden, Tyler A. "III-V Tunneling Based Quantum Devices for High Frequency Applications." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469199253.

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14

Xia, Zhanbo. "Materials and Device Engineering for High Performance β-Ga2O3-based Electronics". The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1587688595358557.

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15

Trivedi, Vishal P. "Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.

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16

Elf, Patric. "Radiation effects on wide bandgap semiconductor devices." Thesis, KTH, Tillämpad fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-283320.

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Gallium nitride (GaN) based high-electron-mobility transistors (HEMTs) are used in a wide variety of areas, such as 5G, automotive, aeronautics/astronautics and sensing elds ranging from chemical, mechanical, biological to optical applications. Owing superior material properties, the GaN based HEMTs are especially useful in harsh operation environments e.g. in the combustion engine, exhaust, space, and medical instruments where the reliability and resilience are highly demanded. In this thesis the e ect of proton irradiation on the GaN HEMTs as well as the possible incorporation of them in bio

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17

Asimakis, Aristidis. "Organic semiconductors : material characterisation and device physics." Thesis, Imperial College London, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.423285.

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18

Rakheja, Shaloo. "Interconnects for post-CMOS devices: physical limits and device and circuit implications." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45866.

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The objective of this dissertation is to classify the opportunities, advantages, and limits of novel interconnects for post-CMOS logic that can augment or eventually replace the CMOS logic. Post-CMOS devices are envisaged on the idea of using state variables other than the electron charge to store and manipulate information. In the first component of the thesis, a comprehensive analysis of the performance and the energy dissipation of novel logic based on various state variables is conducted, and it is demonstrated that the interconnects will continue to be a major challenge even for post-CMOS

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19

Balkan, Naci. "Hot Electrons in Semiconductors : Physics and Devices." Thesis, University of Essex, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.504827.

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20

McFadden, C. "Electron transport in GaAs semiconductor devices." Thesis, University of Cambridge, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.332168.

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21

Kardynal, Beata Ewa. "Fabrication and physics of equilibrium electron tunnelling devices." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.243018.

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22

Barton, T. M. "Characterisation of the physical behaviour of GaAs MESFETs." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383294.

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23

Frost, Jonathan Edward Francis. "The physics and fabrication of GaAs/AlGaAs ballistic electron devices." Thesis, Anglia Ruskin University, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.261519.

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24

Hu, Jun. "Semiconductor nanowire based optoelectronic devices: physics, simulation and design /." Diss., Digital Dissertations Database. Restricted to UC campuses, 2009. http://uclibs.org/PID/11984.

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25

Scannell, William Christian 1970. "Chaotic electron transport in semiconductor devices." Thesis, University of Oregon, 2010. http://hdl.handle.net/1794/10933.

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xix, 171 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.<br>The field of quantum chaos investigates the quantum mechanical behavior of classically chaotic systems. This dissertation begins by describing an experiment conducted on an apparatus constructed to represent a three dimensional analog of a classically chaotic system. Patterns of reflected light are shown to produce fractals, and the behavior of the fractal dimension D F is shown to depend on the light's ability to escape the apparatu

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26

Yang, Li Ph D. Massachusetts Institute of Technology. "Lattice mismatched compound semiconductors and devices on silicon." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/77491.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 121-125).<br>III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and the degradation of IIIV MOSFET channel mobility remain two major challenges for III-V MOSFETs. The purpose of this thesis is to solve or partially solve these challenges. To create large diameter III-V m

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27

Martin, Theodore Peyton. "Low-dimensional electron transport in mesoscopic semiconductor devices /." view abstract or download file of text, 2006. http://proquest.umi.com/pqdweb?did=1280149921&sid=2&Fmt=2&clientId=11238&RQT=309&VName=PQD.

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Thesis (Ph. D.)--University of Oregon, 2006.<br>Typescript. Includes vita and abstract. Includes bibliographical references (leaves 187-196). Also available for download via the World Wide Web; free to University of Oregon users.

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28

Bestwick, Timothy David. "Low energy ion beam processing for semiconductor devices." Thesis, University of Cambridge, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292942.

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29

Peralta, Michael Olivas. "Statistical simulation of complex correlated semiconductor devices." Diss., The University of Arizona, 1999. http://hdl.handle.net/10150/284048.

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The various devices (transistors, resistors, etc.) in an integrated semiconductor circuit have very highly coupled or correlated parametric inter-relationships. Adding to the complexity, are changes in the parametric values as the sizes and spacings between the devices change. This coupling is not in the form of interaction fields or forces but rather takes place through the correlation of parameters between different devices. These parametric correlations occur because of the processing of the semiconductor wafers through its manufacturing stages. The devices on each wafer have many n-type or

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30

Gug, Randeep Kumar. "Computer simulations of doping, device structures and fabrication processes in semiconductors." Thesis, University of Hull, 1999. http://hydra.hull.ac.uk/resources/hull:11499.

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31

Almeida, Nuno Sucena. "Development of a multi-physics simulation framework for semiconductor materials and devices." Thesis, Boston University, 2012. https://hdl.handle.net/2144/32877.

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Thesis (Ph.D.)--Boston University<br>PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis or dissertation. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.<br>Modern day semiconductor technology devices face the ever increasing issue of accounting for quantum mechanics effects on their modeling and performance assessment. The objective of this work is to create a

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32

Maldonado, Miguel. "Fabrication of mesoscopic semiconductor devices and their transport characteristics." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/15006.

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33

Hoban, Peter Thomas. "The transient electrical performance of high power semiconductor devices." Thesis, Staffordshire University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242620.

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34

Payling, C. A. "Electrical and optical studies of semiconductor devices and materials." Thesis, University of Nottingham, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383738.

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35

Williams, Erica Jane. "Applications of epitaxial growth to semiconductor and superconductor devices." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239737.

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36

Mace, Daniel. "Low temperature electron transport in III-V semiconductor devices." Thesis, University of Cambridge, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259629.

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37

Rousseau, Ian Michael. "Physics and simulation of transport processes in hybrid organic semiconductor devices." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/61264.

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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2010.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 48-51).<br>Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' amorphous nature allow utilization of cheap, high-throughput manufacturing techniques, it poses a unique challenge: the physics of carrier and excitation transport in amorphous semiconductors is fundam

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38

Czajkowski, Igor Kajetan. "Impact ionisation in bulk semiconductors and superlattice devices." Thesis, University of Surrey, 1990. http://epubs.surrey.ac.uk/842982/.

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This thesis reports results of experimental and theoretical investigations of impact ionisation in semiconductors. The impact ionisation rates for electrons and holes (alpha and beta respectively) are important parameters which determine the performance of several high-field semiconductor devices, including avalanche photodiodes (APDs). These ionisation rates depend on the threshold energies for ionisation, which are determined by the details of the band-structure for a semiconductor material. However, little is known about the band-structure features responsible for the favourable noise-perfo

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39

Peterson, Charles A. "Characterization of semiconductor devices through scanned probe microscopies." Diss., The University of Arizona, 2001. http://hdl.handle.net/10150/279833.

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Modern ULSI technology is currently pushing the limits of metal-oxide-semiconductor field-effect-transistor (MOSFET) gate dielectric stability by requiring thicknesses on the order of only a few tens of angstroms. At this thickness, even small levels of contamination may lead to undesirable or fatal device characteristics. Common techniques for detecting the effects of contaminants on MOSFET devices use, for example, gate oxide integrity (GOI) and capacitance vs. voltage (C-V) curves methods. Such methods, however, lack the spatial resolution required to characterize the effects of an isolated

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40

Lee, Michael M. "Organic-inorganic hybrid photovoltaics based on organometal halide perovskites." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:9384fc54-30de-4f0d-86fc-71c22d350102.

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This thesis details the development of a novel photovoltaic device based on organometal halide perovskites. The initial focus of this thesis begins with the study of lighttrapping strategies in solid-state dye-sensitised solar cells (detailed in chapter 3). While I report enhancement in device performance through the application of near and far-ﬁeld light-trapping techniques, I ﬁnd that improvements remain step-wise due to fundamental limitations currently employed in dye-sensitised solar cell technology— notably, the available light-sensitising materials. I found a promising yet under researc

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41

Bruce, Thomas Allan. "Studies on semiconductor devices as gas and vapour sensors." Thesis, University of Greenwich, 1993. http://gala.gre.ac.uk/6119/.

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42

Cao, Guangjun. "Physics and technology of silicon RF power devices." Thesis, De Montfort University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391785.

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43

Schröder, Stefan [Verfasser]. "Circuit-Simulation Models of High-Power Devices Based on Semiconductor Physics / Stefan Schröder." Aachen : Shaker, 2003. http://d-nb.info/1179024001/34.

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44

Li, Stella. "Interface state generation induced by Fowler-Nordheim tunneling in mos devices /." Hong Kong : University of Hong Kong, 1999. http://sunzi.lib.hku.hk/hkuto/record.jsp?B20566487.

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45

Gao, Wei. "Computer modelling and experimental characterisation of amorphous semiconductor thin films and devices." Thesis, University of Abertay Dundee, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283970.

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46

Yang, Yinxiao. "Physical structural and behavioral integration of graphene devices." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47613.

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The strategic importance of microelectronics is reflected in its ubiquity in the global production network and in our daily lives. Above all, the microelectronics revolution has been enabled and driven by the scalability of the silicon transistor and the computational efficiency of its CMOS architecture. While the semiconductor industry has been incredibly adept at pushing the boundaries of scaling in the last few decades, many factors suggest that silicon technology is running into scientific and practical limitations to further scaling. Thus, the push for a beyond-silicon computing platform

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47

Khadka, Sudiksha. "Growth Techniques and Optoelectronic Study of 2D Semiconductor Based Devices." Ohio University / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1515607278534591.

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48

Barnes, Mark. "Terahertz emission from ultrafast lateral diffusion currents within semiconductor devices." Thesis, University of Southampton, 2014. https://eprints.soton.ac.uk/363127/.

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Single cycle THz emission from unbiased semiconductor devices after ultrafast carrier excitation can be attributed to surge currents on the surface of the device. These currents are due to either drift currents where carriers are accelerated by an internal electric field perpendicular to the surface (surface field effect) or diffusion currents where a separation of charge forms due to electrons and holes having different mobilities (photo-Dember effect). This surface emission is difficult to out couple from the semiconductor device as the emission is parallel to the surface of the semiconducto

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49

Stepanov, Sergei. "MOCVD growth and characterisation of III-nitride semiconductors, heterostructures and devices." Thesis, University of Bath, 2003. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.275881.

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50

Cheng, Cheng. "Semiconductor colloidal quantum dots for photovoltaic applications." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:07baccd0-2098-4306-8a9a-49160ec6a15a.

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This thesis studies lead suphide (PbS) colloidal quantum dots and their photovoltaic applications. Different sizes of PbS QDs were synthesised and characterised using absorption spectroscopy and transmission electron microscopes. PbS QD Schottky junction devices were fabricated with AM1.5 power conversion efficiency up to 1.8 %. The Schottky junction geometry limits the device performance. A semiconductor heterojunction using ZnO as an electron acceptor was built and the device efficiency increased to 3%. By studying the light absorption and charge extraction profile of the bilayer device, the

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