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Journal articles on the topic 'Semiconductor Device Physics'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

MOLENKAMP, LAURENS W. "DEVICE CONCEPTS IN SEMICONDUCTOR SPINTRONICS." International Journal of Modern Physics B 22, no. 01n02 (2008): 119. http://dx.doi.org/10.1142/s0217979208046207.

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Semiconductor spintronics has now reached a stage where the basic physical mechanisms controlling spin injection and detection are understood. Moreover, some critical technological issues involved in the growth and lithography of the magnetic semiconductors have been solved. This has allowed us to explore the physics of meanwhile quite complex spintronic devices. The lectures will start with an introduction to spin transport in metals and semiconductors. Building upon this, I will discuss various simple devices that demonstrate this basic physics in action. Subsequently, more advanced devices

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2

Friend, R. H. "Semiconductor device physics with conjugated polymers." Physica Scripta T66 (January 1, 1996): 9–15. http://dx.doi.org/10.1088/0031-8949/1996/t66/001.

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3

Prijić, Z. D., and S. Z. Mijalković. "Advanced semiconductor device physics and modeling." Microelectronics Journal 25, no. 8 (1994): 768. http://dx.doi.org/10.1016/0026-2692(94)90142-2.

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4

Snowden, C. M. "Semiconductor device modelling." Reports on Progress in Physics 48, no. 2 (1985): 223–75. http://dx.doi.org/10.1088/0034-4885/48/2/002.

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5

Xuan Yang and D. K. Schroder. "Some Semiconductor Device Physics Considerations and Clarifications." IEEE Transactions on Electron Devices 59, no. 7 (2012): 1993–96. http://dx.doi.org/10.1109/ted.2012.2195011.

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6

Tada, Tetsuo, and Keiichi Sawada. "4720671 Semiconductor device testing device." Microelectronics Reliability 28, no. 4 (1988): 669. http://dx.doi.org/10.1016/0026-2714(88)90273-9.

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7

Sagara, Kazuhiko, Tohru Nakamura, Kazuo Nakazato, Tokuo Kure, Kiyoji Ikeda, and Noriyuki Homma. "4829361 Semiconductor device." Microelectronics Reliability 30, no. 1 (1990): i. http://dx.doi.org/10.1016/0026-2714(90)90159-k.

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8

Nishioka, Yasushiro, Hiroshi Shinriki, Noriyuki Sakuma, and Kiichiro Mukai. "4891684 Semiconductor device." Microelectronics Reliability 31, no. 1 (1991): iii. http://dx.doi.org/10.1016/0026-2714(91)90474-l.

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9

Teixeira, Dyanna G. D., Jane M. G. Laranjeira, Elder A. de Vasconcelos, Eronides F. da Silva, Walter M. de Azevedo, and Helen J. Khoury. "Reliability physics study for semiconductor-polymer device development." Microelectronics Journal 34, no. 5-8 (2003): 713–15. http://dx.doi.org/10.1016/s0026-2692(03)00109-5.

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10

Oh, Hongseok, and Shadi A. Dayeh. "Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices." Sensors 20, no. 14 (2020): 3872. http://dx.doi.org/10.3390/s20143872.

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Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classify these piezoelectric devices according to the material dimensionality and present physics-based dev

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11

Bsiesy, Ahmad. "Spin injection into semiconductors: towards a semiconductor-based spintronic device." Comptes Rendus Physique 6, no. 9 (2005): 1022–26. http://dx.doi.org/10.1016/j.crhy.2005.11.003.

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12

Sano, Nobuyuki, Katsuhisa Yoshida, Chih-Wei Yao, and Hiroshi Watanabe. "Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devices." Materials 11, no. 12 (2018): 2559. http://dx.doi.org/10.3390/ma11122559.

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Localized impurities doped in the semiconductor substrate of nanostructure devices play anessential role in understanding and resolving transport and variability issues in device characteristics.Modeling discrete impurities under the framework of device simulations is, therefore, an urgent needfor reliable prediction of device performance via device simulations. In the present paper, we discussthe details of the physics associated with localized impurities in nanostructure devices, which areinherent, yet nontrivial, to any device simulation schemes: The physical interpretation and the roleof e

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13

Thalken, Jason, Stephan Haas, and A. F. J. Levi. "Synthesis for semiconductor device design." Journal of Applied Physics 98, no. 4 (2005): 044508. http://dx.doi.org/10.1063/1.2014942.

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14

Tatematsu, Take. "4464750 Semiconductor memory device." Microelectronics Reliability 25, no. 2 (1985): 401. http://dx.doi.org/10.1016/0026-2714(85)90179-9.

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15

Maeno, Hidesh, and Tetsuo Tada. "4813043 Semiconductor test device." Microelectronics Reliability 29, no. 5 (1989): iii. http://dx.doi.org/10.1016/0026-2714(89)90324-7.

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16

IÑIGUEZ, BENJAMIN, TOR A. FJELDLY, MICHAEL S. SHUR, and TROND YTTERDAL. "SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES." International Journal of High Speed Electronics and Systems 09, no. 03 (1998): 725–81. http://dx.doi.org/10.1142/s0129156498000312.

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We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. We emphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including deep sub-micrometer devices. Such an approach is needed in order to accurately describe and predict both stationary and dynamic device behavior and to make the models suitable for implementation in advanced computer aided design tool including cir

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17

Tang, Henry H. K., and Kenneth P. Rodbell. "Single-Event Upsets in Microelectronics: Fundamental Physics and Issues." MRS Bulletin 28, no. 2 (2003): 111–16. http://dx.doi.org/10.1557/mrs2003.37.

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AbstractWe review the current understanding of single-event upsets (SEUs) in microelectronic devices. In recent years, SEUs have been recognized as one of the key reliability concerns for both current and future technologies. We identify the major sources of SEUs that impact many commercial products: (1) alpha particles in packaging materials, (2) background radiation due to cosmic rays, and (3) thermal neutrons in certain device materials. The origins of SEUs are examined from the standpoint of the fundamental atomic and nuclear interactions between the intruding particles (alpha particles, c

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18

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible

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19

Yeow, Y. T., and C. H. Ling. "Teaching semiconductor device physics with two-dimensional numerical solver." IEEE Transactions on Education 42, no. 1 (1999): 50–58. http://dx.doi.org/10.1109/13.746335.

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20

Burroughes, J. H., C. A. Jones, and R. H. Friend. "New semiconductor device physics in polymer diodes and transistors." Nature 335, no. 6186 (1988): 137–41. http://dx.doi.org/10.1038/335137a0.

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21

ATIWONGSANGTHONG, N., S. NIEMCHAROEN, and W. TITIROONGRUANG. "NANOPOROUS SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTOR." Journal of Nonlinear Optical Physics & Materials 19, no. 04 (2010): 713–21. http://dx.doi.org/10.1142/s0218863510005637.

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In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al /nanoporous silicon Schottky-barrier jun

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22

Huang, Yu, and C. M. Lieber. "Integrated nanoscale electronics and optoelectronics: Exploring nanoscale science and technology through semiconductor nanowires." Pure and Applied Chemistry 76, no. 12 (2004): 2051–68. http://dx.doi.org/10.1351/pac200476122051.

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Semiconductor nanowires (NWs)represent an ideal system for investigating low-dimensional physics and are expected to play an important role as both interconnects and functional device elements in nanoscale electronic and optoelectronic devices. Here we review a series of key advances defining a new paradigm of bottom-up assembling integrated nanosystems using semiconductor NW building blocks. We first introduce a general approach for the synthesis of a broad range of semiconductor NWs with precisely controlled chemical composition, physical dimension, and electronic, optical properties using a

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23

Forrest, Stephen R. "Excitons and the lifetime of organic semiconductor devices." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 373, no. 2044 (2015): 20140320. http://dx.doi.org/10.1098/rsta.2014.0320.

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While excitons are responsible for the many beneficial optical properties of organic semiconductors, their non-radiative recombination within the material can result in material degradation due to the dumping of energy onto localized molecular bonds. This presents a challenge in developing strategies to exploit the benefits of excitons without negatively impacting the device operational stability. Here, we will briefly review the fundamental mechanisms leading to excitonic energy-driven device ageing in two example devices: blue emitting electrophosphorescent organic light emitting devices (PH

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24

Wang, Chengliang, Huanli Dong, Lang Jiang, and Wenping Hu. "Organic semiconductor crystals." Chemical Society Reviews 47, no. 2 (2018): 422–500. http://dx.doi.org/10.1039/c7cs00490g.

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25

PEARTON, S. J. "ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY." International Journal of Modern Physics B 07, no. 28 (1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.

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A review is given of the applications of ion implantation in III–V compound semiconductor device technology, beginning with the fundamentals of ion stopping in these materials and describing the use of implantation for both doping and isolation. There is increasing interest in the use of MeV implantation to create unique doping profiles or for the isolation of thick device structures such as heterojunction bipolar transistors or multi quantum well lasers, and we give details of these areas and the metal masking layers necessary for selective area processing. Finally, examples are given of the

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26

Garside, B. K., and P. E. Jessop. "New semiconductor materials and structures for electro-optical devices." Canadian Journal of Physics 63, no. 6 (1985): 801–10. http://dx.doi.org/10.1139/p85-129.

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New semiconductor materials and device structures are essential to the development of new types of electro-optical devices and systems in areas such as integrated optics, optical communications, and optical computing. This paper presents a discussion of basic materials requirements, in terms of both optical properties and materials fabrication technologies, for representative electro-optical devices. In the area of optical communications, interest is shifting towards longer wavelengths, which generates the need for sources and detectors operating in the same region. The current status and futu

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27

Shin, Dong, and Suk-Ho Choi. "Graphene-Based Semiconductor Heterostructures for Photodetectors." Micromachines 9, no. 7 (2018): 350. http://dx.doi.org/10.3390/mi9070350.

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Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies a

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28

LU, MAO-WANG. "ELECTRON-SPIN FILTERING IN HYBRID FERROMAGNETIC/SEMICONDUCTOR NANOSYSTEM." Modern Physics Letters B 21, no. 05 (2007): 269–78. http://dx.doi.org/10.1142/s0217984907012645.

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The spin-dependent transport of electrons in realistic ferromagnetic/semiconductor hybrid nanosystems was investigated theoretically. This kind of nanosystem can be experimentally realized by depositing a magnetized ferromagnetic strip with arbitrary magnetization direction on the surface of a semiconductor heterostructure. It is revealed that a large spin-polarized current can be achieved in such a device. It is also shown that the spin polarity of the electron transport can be switched by adjusting the structural parameters and location of the ferromagntic strip in the system. These interest

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29

Ozawa, Masahid. "4467345 Semiconductor integrated circuit device." Microelectronics Reliability 25, no. 2 (1985): 402. http://dx.doi.org/10.1016/0026-2714(85)90183-0.

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30

Watanabe, Hisashi. "4551745 Package for semiconductor device." Microelectronics Reliability 26, no. 4 (1986): 799. http://dx.doi.org/10.1016/0026-2714(86)90205-2.

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31

Kabashima, Katsuhik, Yoshihiro Takemae, Shigeki Nozaki, et al. "4550289 Semiconductor integrated circuit device." Microelectronics Reliability 26, no. 3 (1986): 601. http://dx.doi.org/10.1016/0026-2714(86)90707-9.

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32

Nishimura, Yasumasa. "4719410 Redundancy-secured semiconductor device." Microelectronics Reliability 28, no. 4 (1988): 667. http://dx.doi.org/10.1016/0026-2714(88)90267-3.

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33

Sato, Nobuyuki, Kazuaki Ujiie, Masaaki Terasawa, and Shinji Nabetani. "4692904 Semiconductor integrated circuit device." Microelectronics Reliability 28, no. 2 (1988): 329. http://dx.doi.org/10.1016/0026-2714(88)90378-2.

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34

Tsubosaki, Kunihiro, Gen Murakami, Toshiyuki Sakuta, Masamichi Ishihara, Satoru Ito, and Yasuo Mori. "4951122 Resin-encapsulated semiconductor device." Microelectronics Reliability 31, no. 2-3 (1991): xii. http://dx.doi.org/10.1016/0026-2714(91)90284-e.

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35

Ogata, Masatsugu, Tadanori Segawa, Hidetoshi Abe, Shigeo Suzuki, and Tatsuo Kawata. "4965657 Resin encapsulated semiconductor device." Microelectronics Reliability 31, no. 6 (1991): 1295. http://dx.doi.org/10.1016/0026-2714(91)90324-z.

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36

Frey, L., S. Bogen, M. Herden, and H. Ryssel. "Deep implants for semiconductor device applications." Radiation Effects and Defects in Solids 140, no. 1 (1996): 87–101. http://dx.doi.org/10.1080/10420159608212943.

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37

Tripathi, S. K. "Inorganic/Organic Hybrid Nanocomposite and its Device Applications." Solid State Phenomena 201 (May 2013): 65–101. http://dx.doi.org/10.4028/www.scientific.net/ssp.201.65.

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VI semiconductors are promising nanomaterials for applications as window layers in low-cost and high-efficiency thin film solar cells. These nanoparticles are considered to be the model systems for investigating the unique optical and electronic properties of quantum-confined semiconductors. The electrical and optical properties of polymers are improved by doping with semiconductor materials and metal ions. In particular, nanoparticle-doped polymers are considered to be a new class of organic materials due to their considerable modification of physical properties. In this paper, I review the p

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38

Skolnick, M. S., and D. J. Mowbray. "SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications." Annual Review of Materials Research 34, no. 1 (2004): 181–218. http://dx.doi.org/10.1146/annurev.matsci.34.082103.133534.

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39

Khanna, Vinod Kumar. "Carrier lifetimes and recombination–generation mechanisms in semiconductor device physics." European Journal of Physics 25, no. 2 (2004): 221–37. http://dx.doi.org/10.1088/0143-0807/25/2/009.

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40

FERRY, D. K., R. AKIS, M. J. GILBERT, A. CUMMINGS, and S. M. RAMEY. "SEMICONDUCTOR DEVICE SCALING: PHYSICS, TRANSPORT, AND THE ROLE OF NANOWIRES." International Journal of High Speed Electronics and Systems 17, no. 03 (2007): 445–56. http://dx.doi.org/10.1142/s0129156407004631.

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Nanoelectronics (including nanomagnetics and nanophotonics) generally refers to nanometer scale devices, and to circuits and architectures which are composed of these devices. Continued scaling of the devices into the nanometer range leads to enhanced information processing systems. Generally, this scaling has arisen from three major sources, one of which is reduction of the physical gate length of individual transistors. Until recently, this has also allowed an increase in the clock speed of the chip, but power considerations have halted this to levels around 4 GHz in Si. Indeed, there are in

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41

Wang, Ke, George W. Pan, R. Techentin, and B. Gilbert. "Semiconductor nonlinear device modeling using multiwavelets." Microwave and Optical Technology Letters 37, no. 6 (2003): 436–40. http://dx.doi.org/10.1002/mop.10942.

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42

Horiuchi, Akinor, Toshio Binnaka, and Shigeyuki Maruyama. "4604572 Device for testing semiconductor devices at a high temperature." Microelectronics Reliability 27, no. 2 (1987): 395. http://dx.doi.org/10.1016/0026-2714(87)90310-6.

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43

Papp, G., and F. M. Peeters. "Magnetoresistance in a hybrid ferromagnetic/semiconductor device." Journal of Applied Physics 107, no. 6 (2010): 063718. http://dx.doi.org/10.1063/1.3359652.

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44

GILDENBLAT, G., and D. FOTY. "LOW TEMPERATURE MODELS OF METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS." International Journal of High Speed Electronics and Systems 06, no. 02 (1995): 317–73. http://dx.doi.org/10.1142/s0129156495000092.

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We review the modeling of silicon MOS devices in the 10–300 K temperature range with an emphasis on the specifics of low-temperature operation. Recently developed one-dimensional models of long-channel transistors are discussed in connection with experimental determination and verification of the effective channel mobility in a wide temperature range. We also present analytical pseudo-two-dimensional models of short-channel devices which have been proposed for potential use in circuit simulators. Several one-, two-, and three-dimensional numerical models are discussed in order to gain insight

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45

Chu, S. N. G. "Long Wavelength Laser Diode Reliability and Lattice Imperfections." MRS Bulletin 18, no. 12 (1993): 43–48. http://dx.doi.org/10.1557/s0883769400039075.

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Reliable long wavelength laser diodes emitting in the 1.30−1.55 μm regime with an expected operating life greater than 25 years for optical fiber communication applications are now fabricated using a combined heavy screening and accelerated aging process. For a given laser structure, the reliability of the devices depends intricately on both the crystalline perfection of the complex buried-heteroepitaxial semiconductor structures as well as the qualities of structures external to the semiconductor, such as electrical contact, dielectric coating, bonding, and packaging structures external to th

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46

Verma, Prinsa, and Avinash C. Pandey. "Capped semiconductor nanocrystals for device applications." Optics Communications 284, no. 3 (2011): 881–84. http://dx.doi.org/10.1016/j.optcom.2010.10.005.

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47

Lüth, H. "Interface Science, Its Impact on Modern Semiconductor Technology and Device Physics." physica status solidi (a) 173, no. 1 (1999): 5–14. http://dx.doi.org/10.1002/(sici)1521-396x(199905)173:1<5::aid-pssa5>3.0.co;2-f.

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48

Moloney, J. V., R. A. Indik, J. Hader, and S. W. Koch. "Modeling semiconductor amplifiers and lasers: from microscopic physics to device simulation." Journal of the Optical Society of America B 16, no. 11 (1999): 2023. http://dx.doi.org/10.1364/josab.16.002023.

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49

Dimitrijev, S., and N. Stojadinović. "Introduction to semiconductor device yield modeling." Microelectronics Reliability 34, no. 10 (1994): 1696. http://dx.doi.org/10.1016/0026-2714(94)90056-6.

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50

Ikeya, Hirotoshi, Shuichi Suzuki, Takayuki Oguni, Kazutaka Matsumoto, and Akiko Hatanaka. "4572853 Resin encapsulation type semiconductor device." Microelectronics Reliability 26, no. 5 (1986): 1000. http://dx.doi.org/10.1016/0026-2714(86)90259-3.

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