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Journal articles on the topic 'Semiconductor diode laser'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

SHIM, Jong-In. "Semiconductor Laser Diode." Physics and High Technology 19, no. 4 (2010): 14. http://dx.doi.org/10.3938/phit.19.016.

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2

Li, Zai Jin, Yi Qu, Te Li, et al. "The Characteristics of Facet Coatings on Diode Lasers." Advanced Materials Research 1089 (January 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.

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The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.

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3

Duker, Jay S., Jay L. Federman, Hermann Schubert, and Christopher Talbot. "Semiconductor Diode Laser Endophotocoagulation." Ophthalmic Surgery, Lasers and Imaging Retina 20, no. 10 (1989): 717–19. http://dx.doi.org/10.3928/1542-8877-19891001-10.

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4

Lenstra, Daan. "Special Issue “Semiconductor Laser Dynamics: Fundamentals and Applications”." Photonics 7, no. 2 (2020): 40. http://dx.doi.org/10.3390/photonics7020040.

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With the advent of integrated photonics, a crucial role is played by semiconductor diode lasers (SDLs) as coherent light sources. Old paradigms of semiconductor laser dynamics, like optical injection, external feedback and the coupling of lasers, regained relevance when SDLs were integrated on photonic chips. This Special Issue presents a collection of seven invited feature papers and 11 contributed papers reporting on recent advances in semiconductor laser dynamics.

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5

Schuman, Joel S. "Semiconductor Diode Laser Peripheral Iridotomy." Archives of Ophthalmology 108, no. 9 (1990): 1207. http://dx.doi.org/10.1001/archopht.1990.01070110023004.

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6

Akasaki, I., S. Sota, H. Sakai, T. Tanaka, M. Koike, and H. Amano. "Shortest wavelength semiconductor laser diode." Electronics Letters 32, no. 12 (1996): 1105. http://dx.doi.org/10.1049/el:19960743.

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7

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible spectrum.During the past thirty years or so, development of the narrower gap III-V compound semiconductors, such as gallium arsenide and related III-V alloys, has progressed quite rapidly. A striking example of the current maturity reached by the III-V semiconductor materials is the infrared semiconductor laser that provides the optical source for fiber communication links and compact-disk players. Despite the fact that the direct bandgap II-VI semiconductors offered the most promise for realizing diode lasers and efficient light-emitting-diode (LED) displays over the green and blue portions of the visible spectrum, major obstacles soon emerged with these materials, broadly defined in terms of the structural and electronic quality of the material. As a result of these persistent problems, by the late 1970s the II-VI semiconductors were largely relegated to academic research among a small community of workers, primarily in university research laboratories.

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8

Gu, Yuan Yuan, Guo Xing Wu, Hui Lu, and Yan Cui. "GaAs-Based High Power Diode Laser." Advanced Materials Research 538-541 (June 2012): 1852–56. http://dx.doi.org/10.4028/www.scientific.net/amr.538-541.1852.

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High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. The device structure and stack technology of edge-emitting diode laser were presented briefly as well as the development of electro-optical conversion efficiency ,lifetime , power .The technology of ten-thousand –watt level high power diode laser was introduced as a new generation of laser processing equipment. In order to output high power, we utilized polarization coupling technology to couple two 808nm and 880nm laser diode stack together, and designed the optical system to expand and focus the beam, through the experiment; we realize the overall efficiency more than 90%, power output 1000W.

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9

Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.

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The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and plasma etching. Ion implantation is a technology whereby impurity atoms are introduced into the semiconductor with precise control of concentration and profile. It is widely used in mature semiconductor materials systems such as silicon or gallium arsenide for selective area doping or isolation. Plasma etching is employed to define device features in the semiconductor material with controlled profiles and etch depths. Plasma etching is particularly necessary in the III-nitride materials systems due to the lack of suitable wet-etch chemistries, as will be discussed later.Figure 1 shows a laser-diode structure (after Nakamura) where plasma etching is required to form the laser facets that ideally should be vertical with smooth surfaces. The first III-nitride-based laser diode was fabricated using reactive ion etching (RIE) to form the laser facets but suffered from rough mirror facet surfaces that contributed to scattering loss and a high lasing threshold. This is a prime example of how improved material quality alone will not yield optimum device performance.

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10

Le, H. Q., W. D. Goodhue, and S. Di Cecca. "High‐brightness diode‐laser‐pumped semiconductor heterostructure lasers." Applied Physics Letters 60, no. 11 (1992): 1280–82. http://dx.doi.org/10.1063/1.107316.

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11

Hergenröder, R., and K. Niemax. "Laser atomic absorption spectroscopy applying semiconductor diode lasers." Spectrochimica Acta Part B: Atomic Spectroscopy 43, no. 12 (1988): 1443–49. http://dx.doi.org/10.1016/0584-8547(88)80183-6.

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12

Cassidy, Daniel T. "Spectral Output of Homogeneously Broadened Semiconductor Lasers." Photonics 8, no. 8 (2021): 340. http://dx.doi.org/10.3390/photonics8080340.

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Gain, spontaneous emission, and reflectance play important roles in setting the spectral output of homogeneously broadened lasers, such as semiconductor diode lasers. This paper provides a restricted-in-scope review of the steady-state spectral properties of semiconductor diode lasers. Analytic but transcendental solutions for a simplified set of equations for propagation of modes through a homogeneously broadened gain section are used to create a Fabry–Pérot model of a diode laser. This homogeneously broadened Fabry–Pérot model is used to explain the spectral output of diode lasers without the need for guiding-enhanced capture of spontaneous emission, population beating, or non-linear interactions. It is shown that the amount of spontaneous emission and resonant enhancement of the reflectance-gain (RG) product as embodied in the presented model explains the observed spectral output. The resonant enhancement is caused by intentional and unintentional internal scattering and external feedback.

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13

Zeni, Luigi, Stefania Campopiano, Antonello Cutolo, and Giuseppe D’Angelo. "Power semiconductor laser diode arrays characterization." Optics and Lasers in Engineering 39, no. 2 (2003): 203–17. http://dx.doi.org/10.1016/s0143-8166(01)00111-7.

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14

Klinkhammer, Sönke, Tobias Grossmann, Karl Lull, et al. "Diode-Pumped Organic Semiconductor Microcone Laser." IEEE Photonics Technology Letters 23, no. 8 (2011): 489–91. http://dx.doi.org/10.1109/lpt.2011.2111417.

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15

CROSS, P. S., G. L. HARNAGEL, W. STREIFER, D. R. SCIFRES, and D. F. WELCH. "Ultrahigh-Power Semiconductor Diode Laser Arrays." Science 237, no. 4820 (1987): 1305–9. http://dx.doi.org/10.1126/science.237.4820.1305.

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16

Bour, David, Christopher Chua, Zhihong Yang, Mark Teepe, and Noble Johnson. "Silver-clad nitride semiconductor laser diode." Applied Physics Letters 94, no. 4 (2009): 041124. http://dx.doi.org/10.1063/1.3077012.

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17

Boller, Klaus-J., Albert van Rees, Youwen Fan, et al. "Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits." Photonics 7, no. 1 (2019): 4. http://dx.doi.org/10.3390/photonics7010004.

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Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si 3 N 4 in SiO 2 ) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 μ m wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.

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18

Lawrenz, J., and K. Niemax. "A semiconductor diode laser spectrometer for laser spectrochemistry." Spectrochimica Acta Part B: Atomic Spectroscopy 44, no. 2 (1989): 155–64. http://dx.doi.org/10.1016/0584-8547(89)80017-5.

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19

Alander, Tapani M., Pekka A. Heino, and Eero O. Ristolainen. "Analysis of Substrates for Single Emitter Laser Diodes." Journal of Electronic Packaging 125, no. 3 (2003): 313–18. http://dx.doi.org/10.1115/1.1527657.

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Electrically conductive substrates (i.e., metals) are often used in the mounting of semiconductor laser diodes. While metals offer a good electrical and thermal performance, they restrict the system integration due to lack of signal routing capability. Since the implementations utilizing laser diodes have become more common, the integration level has also become an important factor in these products. Mounting of lasers on insulative substrates is the key to large-scale integration. Organic boards form the de facto standard of insulative substrates; however, their use with lasers is impossible due to low thermal conductivity. Ceramics, however, offer nearly the same thermal performance as metals but as electrically insulative materials also provide the foundation for high integration levels. In this study the effects of three different ceramic substrates on the stresses within diode lasers was evaluated. Finite element method was used to calculate the mounting induced straining and the thermal performance of the substrate. The same procedure was employed to examine the optimum metallization thickness for the ceramic substrates. The results present how greatly the substrate material can affect the very delicate laser diode. The ceramic substrates, though having nearly the same properties, exhibited clearly distinctive behavior and a great difference in thermal and mechanical performance.

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20

Chu, S. N. G. "Long Wavelength Laser Diode Reliability and Lattice Imperfections." MRS Bulletin 18, no. 12 (1993): 43–48. http://dx.doi.org/10.1557/s0883769400039075.

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Reliable long wavelength laser diodes emitting in the 1.30−1.55 μm regime with an expected operating life greater than 25 years for optical fiber communication applications are now fabricated using a combined heavy screening and accelerated aging process. For a given laser structure, the reliability of the devices depends intricately on both the crystalline perfection of the complex buried-heteroepitaxial semiconductor structures as well as the qualities of structures external to the semiconductor, such as electrical contact, dielectric coating, bonding, and packaging structures external to the semiconductor. The former (crystalline perfection) determines the intrinsic property of the laser, while the latter qualities (electrical contact, etc.) determine the contact resistance, parasitic capacitance, heating, and mechanical and thermal stresses to which a packaged laser device is subjected during operation. Since device heating and external stresses both degrade laser performance and accelerate permanent damage—through processes such as crystalline defect formation, current leakage path development, and doping profile redistribution—a reliable laser device, therefore, requires both a perfect semiconductor structure and also a high-quality external structure. Realistically, however, this may not be easily achievable, especially when a development program is limited in resource and time. Proper choice of the critical material issues in a development process becomes crucial to the success of the program.

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21

Abbasi, S. P., and A. Alimorady. "Wavelength Width Dependence of Cavity Temperature Distribution in Semiconductor Diode Laser." ISRN Thermodynamics 2013 (October 27, 2013): 1–6. http://dx.doi.org/10.1155/2013/424705.

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The study of heat distribution in laser diode shows that there is nonuniform temperature distribution in cavity length of laser diode. In this paper, we investigate the temperature difference in laser diode cavity length and its effect on laser bar output wavelength width that mounted on usual CS model. In this survey at the first, laser was simulated then the simulations result was compared with experimental test result. The result shows that for each emitter there is difference, about 2.5 degree between the beginning and end of cavity.

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22

Bouchene, Mohammed Mehdi, Rachid Hamdi, and Qin Zou. "Theorical analysis of a monolithic all-active three-section semiconductor laser." Photonics Letters of Poland 9, no. 4 (2017): 131. http://dx.doi.org/10.4302/plp.v9i4.785.

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We propose a novel semiconductor laser structure. It is composed of three cascaded active sections: a Fabry-Pérot laser section sandwiched between two gain-coupled distributed feedback (DFB) laser sections. We have modeled this multi-section structure. The simulation results show that compared with index- and gain-coupled DFB lasers, a significant reduction in the longitudinal spatial-hole burning can be obtained with the proposed device, and that this leads to a stable single longitudinal mode operation at relatively high optical power with a SMSR exceeding 56dB. Full Text: PDF ReferencesL.A. Coldren, "Monolithic tunable diode lasers", IEEE J. Select. Topics Quant. Electron. 6, 988 (2000) CrossRef O. Kjebon, R. Schatz, S. Lourdudoss, S. Nilsson, B. Stalnacke, L. Backbom, "30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 [micro sign]m wavelength", Electron. Lett. 33(6), 488 (1997). CrossRef N. Kim, J. Shin, E. Sim, C.W. Lee, D.-S. Yee, M.Y. Jeon, Y. Jang, K.H. Park, "Monolithic dual-mode distributed feedback semiconductor laser for tunable continuous-wave terahertz generation", Opt. Expr. 17(16), 13851 (2009). CrossRef M.J. Wallace, R. ORreilly Meehan, R.R Enright, F. Bello, D. Mccloskey, B. Barabadi, E.N. Wang, J.F. Donegan, "Athermal operation of multi-section slotted tunable lasers", Opt. Expr. 25(13), 14426 (2017). CrossRef J.E. Carroll, J.E.A. Whiteaway, R.G.S. Plumb, "Distributed Feedback Semiconductor Lasers", Distributed feedback semiconductor lasers (IEE and SPIE, 1998). CrossRef H. Ghafour-Shiraz, Distributed Feedback Laser Diodes and Optical Tunable Filters (Wiley, 2003). CrossRef D.D. Marcenac, Ph.D dissertation (University of Cambridge, 1993). DirectLink L.M. Zhang, J.E. Carroll, C. Tsang, "Dynamic response of the gain-coupled DFB laser", IEEE J. Quant. Electr. 29, 1722 (1993). CrossRef W. Li, W.-P. Huang, X. Li, J. Hong, "Multiwavelength gain-coupled DFB laser cascade: design modeling and simulation", IEEE J. Quant. Electro. 36(10), 1110 (2000). CrossRef B.M. Mehdi, H. Rachid, in Proc. 3rd Intern. Conf. on Embedded Systems in Telecomm. and Instrument., Annaba, Algeria (2016). DirectLinkC. Henry, "Theory of the linewidth of semiconductor lasers", IEEE J.Quant. Electr. QE-18, 259 (1982). CrossRef K. Takaki, T. Kise, K. Maruyama, N. Yamanaka, M. Funabashi, A. Kasukawa, "Reduced linewidth re-broadening by suppressing longitudinal spatial hole burning in high-power 1.55-/spl mu/m continuous-wave distributed-feedback (CW-DFB) laser diodes", IEEE J. Quant. Electr. 39, 1060 (2003) CrossRef

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23

BRUNK, MARKUS, and ANSGAR JÜNGEL. "SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS." Mathematical Models and Methods in Applied Sciences 18, no. 12 (2008): 2125–50. http://dx.doi.org/10.1142/s0218202508003315.

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A coupled model with optoelectronic semiconductor devices in electric circuits is proposed. The circuit is modeled by differential-algebraic equations derived from modified nodal analysis. The transport of charge carriers in the semiconductor devices (laser diode and photo diode) is described by the energy-transport equations for the electron density and temperature, the drift-diffusion equations for the hole density, and the Poisson equation for the electric potential. The generation of photons in the laser diode is modeled by spontaneous and stimulated recombination terms appearing in the transport equations. The devices are coupled to the circuit by the semiconductor current entering the circuit and by the applied voltage at the device contacts, coming from the circuit. The resulting time-dependent model is a system of nonlinear partial differential-algebraic equations. The one-dimensional transient transport equations are numerically discretized in time by the backward Euler method and in space by a hybridized mixed finite-element method. Numerical results for a circuit consisting of a single-mode heterostructure laser diode, a silicon photo diode, and a high-pass filter are presented.

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24

Hasan, Syed M. N., Weicheng You, Md Saiful Islam Sumon, and Shamsul Arafin. "Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands." Photonics 8, no. 7 (2021): 267. http://dx.doi.org/10.3390/photonics8070267.

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The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and -C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitride materials and their alloys, in particular AlGaN, are the material of choice for the development of this ultrashort-wavelength laser technology. Despite significant progress in AlGaN-based light-emitting diodes (LEDs), the technological advancement and innovation in diode lasers at these spectral bands is lagging due to several technical challenges. Here, the authors review the progress of AlGaN electrically-pumped lasers with respect to very recent achievements made by the scientific community. The devices based on both thin films and nanowires demonstrated to date will be discussed in this review. The state-of-the-art growth technologies, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates used for the laser demonstrations will be highlighted. We will also outline technical challenges associated with the laser development, which must be overcome in order to achieve a critical technological breakthrough and fully realize the potential of these lasers.

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25

FUJITA, Hideki, Kentarou AKAHANE, Hideshi YOKOTA, and Teiji UCHIDA. "Holographic surface contouring using semiconductor laser diode." Journal of Advanced Science 7, no. 2 (1995): 95. http://dx.doi.org/10.2978/jsas.7.95.

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26

Kimizuka, Yoshifumi, John J. Callahan, Zilong Huang, et al. "Semiconductor diode laser device adjuvanting intradermal vaccine." Vaccine 35, no. 18 (2017): 2404–12. http://dx.doi.org/10.1016/j.vaccine.2017.03.036.

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27

Boiko, D. L., and P. P. Vasil’ev. "Superradiance dynamics in semiconductor laser diode structures." Optics Express 20, no. 9 (2012): 9501. http://dx.doi.org/10.1364/oe.20.009501.

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28

Biswas, T. K., and W. F. McGee. "Volterra series analysis of semiconductor laser diode." IEEE Photonics Technology Letters 3, no. 8 (1991): 706–8. http://dx.doi.org/10.1109/68.84459.

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29

Vasil'ev, P. P., R. V. Penty, and I. H. White. "Superradiant Emission in Semiconductor Diode Laser Structures." IEEE Journal of Selected Topics in Quantum Electronics 19, no. 4 (2013): 1500210. http://dx.doi.org/10.1109/jstqe.2012.2234085.

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30

Pipe, K. P., R. J. Ram, and A. Shakouri. "Internal cooling in a semiconductor laser diode." IEEE Photonics Technology Letters 14, no. 4 (2002): 453–55. http://dx.doi.org/10.1109/68.992575.

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31

Alping, A., R. Tell, and S. Eng. "Photodetection properties of semiconductor laser diode detectors." Journal of Lightwave Technology 4, no. 11 (1986): 1662–68. http://dx.doi.org/10.1109/jlt.1986.1074669.

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32

Peyman, Gholam A., Khaled S. Naguib, and Douglas Gaasterland. "Transscleral application of a semiconductor diode laser." Lasers in Surgery and Medicine 10, no. 6 (1990): 569–75. http://dx.doi.org/10.1002/lsm.1900100609.

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33

Huang, He, Jingxue Ni, Huifeng Wang, et al. "A novel power stability drive system of semiconductor Laser Diode for high-precision measurement." Measurement and Control 52, no. 5-6 (2019): 462–72. http://dx.doi.org/10.1177/0020294019840760.

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In view of the strict requirements of the current high-precision measurement system for stable output power of the semiconductor LD (Laser Diode), a semiconductor LD stable power drive and multi-closed-loop control system are proposed after analyzing the semiconductor laser’s P–I (Power–Current) characteristics and temperature characteristics. The system uses a microcontroller as the core control unit and realizes the stable power output control of the semiconductor laser by controlling the current, power and temperature parameters. In this system, first, the control structure model of the controlled object has been designed. Second, a controllable closed-loop constant current feedback drive circuit has been designed and a high-precision controllable constant current drive circuit of the semiconductor laser has been obtained. Furthermore, the control circuit has been designed based on the neural PI (Proportional-Integral) control model and realizes the short-term stable power output of the semiconductor LD. Finally, a closed-loop temperature control system is designed to ensure that the operating temperature of the semiconductor laser is relatively stable and a long-term stable power output is obtained. By designing the hardware and software of the control system and conducting long-term experiments in the laboratory, we found that the system can guarantee the output power within 1 W of PD (Proportional-Differential) LD, and its long-term power stability can reach 1%. This system has a certain reference significance in using semiconductor lasers for high-quality detection when there are stringent requirements for power.

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34

Li, Juan Juan, Dong Ping Gi Yang, Gang Guo, and Zheng Yan Li. "Design of High-Power Diode Laser Power Source by Single Chip." Applied Mechanics and Materials 496-500 (January 2014): 1381–84. http://dx.doi.org/10.4028/www.scientific.net/amm.496-500.1381.

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The digital Semiconductor Laser’s Driving Source is designed in this paper, in order to gain a constant current source, which the maximize output electric current is 40A; voltage is from 2V to 10V. Based on the requirement of very task, the part of driving and the part of constant temperature control, which is auxiliary designed, are made of the controller of semiconductor laser diode. As the result, the whole of designs ensure the diode laser to work stably.

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35

MacCORMACK, STUART, and ROBERT W. EASON. "PHOTOREFRACTIVE TECHNIQUES FOR DIODE LASER BEAM COMBINATION." Journal of Nonlinear Optical Physics & Materials 01, no. 02 (1992): 431–45. http://dx.doi.org/10.1142/s0218199192000212.

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Techniques for high-power laser array beam combination processes involving photo-refractive materials are reviewed. Details of an all semiconductor laser scheme for the amplification and subsequent photorefractive beam clean-up of a diffraction limited single-mode laser output is presented. Powers in excess of 100 mW (>220 mW accounting for Fresnel losses) are obtained in a diffraction limited signal beam, corresponding to an array to diffraction limited beam transfer efficiency of 33%. Details of a reflection geometry phase conjugate master oscillator-power amplifier scheme which offers the possibility of power scaling between a number of high-power semiconductor laser amplifiers are presented. Using this technique, a 13-dB amplification of a diffraction limited signal beam is obtained using a commercially available, 10-stripe gain-guided device with no special coatings.

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36

Ray, A. "Study of the frequency fluctuations of a semiconductor diode laser." Canadian Journal of Physics 86, no. 2 (2008): 351–58. http://dx.doi.org/10.1139/p07-155.

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Frequency fluctuations of an inexpensive single-mode semiconductor diode laser, which operates in the 822 nm region, are investigated by direct measurement of the error signal. The linear slope of first derivative signal of a transition in the (2,1,1) vibration-rotation band of water vapour is used as a frequency discriminator. A balanced photodetector is used to reduce the intensity noise and to improve the S/N ratio. Frequency stability of the diode laser is investigated when the laser is under a free-running condition and is locked to the line center of the reference transition. An integrator is used to provide feedback voltage to the laser current driver. After frequency stabilization, a more than 60-fold improvement in long-term laser-frequency stability is attained over the performance provided by the free-running semiconductor diode laser. The frequency-noise power spectrum of the diode laser is extracted from the error signal for the Fourier-frequency range ~100 Hz. The Allan variance curve for the laser system is obtained from the frequency-noise power spectrum of the error signal by using a suitable mathematical relation under certain approximations. The extracted values of the Allan variance are compared with the theoretical τ–1 model. The experimental setup is easy to implement in graduate laboratory classes. PACS Nos.: 42.55.Px, 42.62.Fi, 33.70.Jg

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37

Balles, Mark W., and Carmen A. Puliafito. "SEMICONDUCTOR DIODE LASERS: A NEW LASER LIGHT SOURCE IN OPHTHALMOLOGY." International Ophthalmology Clinics 30, no. 2 (1990): 77–83. http://dx.doi.org/10.1097/00004397-199030020-00003.

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38

DePriest, Christopher M., Tolga Yilmaz, Peter J. Delfyett, Jr, Joseph H. Abeles, and Alan Braun. "Laser Optics: Low Timing Jitter Mode-Locked Semiconductor Diode Lasers." Optics and Photonics News 13, no. 12 (2002): 24. http://dx.doi.org/10.1364/opn.13.12.000024.

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39

Jianjun Li, Jianjun Li, Shengjie Lin Shengjie Lin, Tao Liu Tao Liu, et al. "13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity." Chinese Optics Letters 12, s2 (2014): S22502–322504. http://dx.doi.org/10.3788/col201412.s22502.

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40

Tauber, Daniel, and John E. Bowers. "Dynamics of Wide Bandwidth Semiconductor Lasers." International Journal of High Speed Electronics and Systems 08, no. 03 (1997): 377–416. http://dx.doi.org/10.1142/s0129156497000147.

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In this paper we summarize the most important recent advances and results in high speed diode lasers. These advances have primarily come about as a result of physical understanding of the properties that affect the dynamic performance of these lasers. A great deal of progress has been made in understanding the active region properties of such devices, including the electron and hole transport dynamics as well as the effect of active region doping and strain. At the very high frequencies characteristic of the highest speed lasers reported to date the microwave signal propagation becomes an important issue that can limit the laser bandwidth. The distribution of signals along the laser length due to these effects are discussed, analyzed, and measured, and conclusions about bandwidth and device operation are drawn from the analysis. All of these different issues are summarized in this paper from both a theoretical and experimental perspective. The laser structures that address and overcome the problems caused by such factors are presented along with the best results obtained to date.

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41

Leavitt, Bernard. "The Impact of AuSn Preforms Thickness on Solder Joint Reliability." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, HiTen (2019): 000056–60. http://dx.doi.org/10.4071/2380-4491.2019.hiten.000056.

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Abstract A hurdle that prevents widespread use of semiconductor lasers is that their performance is negatively impacted by thermal management. New products like stack layer diodes have a large number of lasers that work all at once in the condense area. When semiconductor laser dies' operational heat increases, the power of the laser decreases. A technique that is helping users overcome this hurdle is the application of a thinner 80Au20Sn solder joint for the die-attach to aid in thermal transfer to copper heat sinks. The paper looks at a variety of different preform thicknesses, ranging from 0.0002″ to 0.0015″, and it also reviews voiding percentages. Our study tested shear strength and looked at how preform thickness impacts joint integrity. Further, we took a more in-depth look at the intermetallic thickness on ultra-thin preforms and observed how it affected the solder joint strength. Finally, we looked at other factors like surface tension and at what thickness preform this starts to impact voiding and performance. The paper will help engineers gain insight into what preform thickness will be the optimal choice for laser diode applications as well as other die-attach applications.

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Kurokawa, Yoshimochi, Yosio Taguchi, Itaru Ohara, Humio Inaba, Masahisa Maeda, and Yosio Kawai. "Development of Medical Equipments Using Semiconductor Laser Diode." JOURNAL OF JAPAN SOCIETY FOR LASER SURGERY AND MEDICINE 9, no. 3 (1988): 147–50. http://dx.doi.org/10.2530/jslsm1980.9.3_147.

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Gupta, Geeti. "Management of gingival hyperpigmentation by semiconductor diode laser." Journal of Cutaneous and Aesthetic Surgery 4, no. 3 (2011): 208. http://dx.doi.org/10.4103/0974-2077.91256.

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Alexander, S. B., D. Welford, and D. V. L. Marquis. "Passive equalization of semiconductor diode laser frequency modulation." Journal of Lightwave Technology 7, no. 1 (1989): 11–23. http://dx.doi.org/10.1109/50.17728.

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Balles, Mark W., Carmen A. Puliafito, Donald J. D'Amico, John J. Jacobson, and Reginald Birngruber. "Semiconductor Diode Laser Photocoagulation in Retinal Vascular Disease." Ophthalmology 97, no. 11 (1990): 1553–61. http://dx.doi.org/10.1016/s0161-6420(90)32377-1.

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Hohimer, J. P., G. A. Vawter, and D. C. Craft. "Unidirectional operation in a semiconductor ring diode laser." Applied Physics Letters 62, no. 11 (1993): 1185–87. http://dx.doi.org/10.1063/1.108728.

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47

Smith, A., J. E. Hastie, H. D. Foreman, T. Leinonen, M. Guina, and M. D. Dawson. "GaN diode-pumping of red semiconductor disk laser." Electronics Letters 44, no. 20 (2008): 1195. http://dx.doi.org/10.1049/el:20081435.

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48

Brancato, Rosario, Riccardo Pratesi, Giovanni Leoni, Giuseppe Trabucchi, and Umberto Vanni. "Semiconductor Diode Laser Photocoagulation of Human Malignant Melanoma." American Journal of Ophthalmology 107, no. 3 (1989): 295–96. http://dx.doi.org/10.1016/0002-9394(89)90317-6.

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Gnatyuk, Volodymyr A., Sergiy N. Levytskyi, Oleksandr I. Vlasenko, and Toru Aoki. "Laser-Induced Doping of CdTe Crystals in Different Environments." Advanced Materials Research 222 (April 2011): 32–35. http://dx.doi.org/10.4028/www.scientific.net/amr.222.32.

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Different procedures of laser-induced doping of the surface region of semi-insulating CdTe semiconductor are discussed. CdTe crystals pre-coated with an In dopant film were subjected to irradiation with nanosecond laser pulses in different environments (vacuum, gas or water). The dopant self-compensation phenomenon was overcome under laser action and In impurity with high concentration was introduced in a thin surface layer of CdTe. In the case of a thick (300-400 nm) In dopant film, laser-induced shock wave action has been considered as the mechanism of solid-phase doping. Formed In/CdTe/Au diode structures showed high rectification depending on the fabrication procedure. Diodes with low leakage current were sensitive to high energy radiation.

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Kim, Dae Sin, Seok Lee, Jae Hun Kim, Deok Ha Woo, Sun Ho Kim, and Sang Kook Han. "Wavelength Tunability of Laterally Coupled Semiconductor Optical Amplifier and Semiconductor Laser Diode." Japanese Journal of Applied Physics 41, Part 2, No. 5B (2002): L574—L576. http://dx.doi.org/10.1143/jjap.41.l574.

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