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Dissertations / Theses on the topic 'Semiconductor equations'

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Published: 4 June 2021
Last updated: 1 February 2022

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1

Murdoch, Thomas. "Galerkin methods for nonlinear elliptic equations." Thesis, University of Oxford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329932.

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2

Ferguson, R. C. "Numerical techniques for the drift-diffusion semiconductor equations." Thesis, University of Bath, 1996. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362239.

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3

Law, Clement K. "Semiconductor Laser Device-Level Characteristics." DigitalCommons@CalPoly, 2011. https://digitalcommons.calpoly.edu/theses/493.

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High-speed modulations of the semiconductor lasers are highly desirable in cost-effective optical communication systems. Developing the experimental setups to extract the characteristics of the semiconductor lasers is vital to the future of the optical research projects. In this thesis, integrated experimental setup designs have been developed to measure the characteristics of the Vertical Cavity Surface Emitting Laser (VCSEL), Distributed Feedback (DFB), and Fabry-Pérot (FP) lasers. The measurements of the DC characteristics are optical power versus drive current (L-I) curves (DFB, VCSEL)
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4

Besse, Pierre-André. "Modal reflectivities and new derivation of the basic equations for semiconductor optical amplifiers /." Zürich : ETH, 1992. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=9608.

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5

Hader, J., I. Kilen, S. W. Koch, and J. V. Moloney. "Non-equilibrium effects in VECSELs." SPIE-INT SOC OPTICAL ENGINEERING, 2017. http://hdl.handle.net/10150/625513.

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A systematic study of microscopic many-body dynamics is used to analyze a strategy for how to generate ultrashort mode locked pulses in the vertical external-cavity surface-emitting lasers with a saturable absorber mirror. The field propagation is simulated using Maxwell's equations and is coupled to the polarization from the quantum wells using the semiconductor Bloch equations. Simulations on the level of second Born-Markov are used to fit coefficients for microscopic higher order correlation effects such as dephasing of the polarization, carrier-carrier scattering and carrier relaxation. We
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6

Dalton, Karen Sonya Helen. "Pulsed field studies of magnetotransport in semiconductor heterostructures." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.325936.

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7

Kilen, Isak Ragnvald, and Isak Ragnvald Kilen. "Non-Equilibrium Many-Body Influence on Mode-Locked Vertical External-Cavity Surface-Emitting Lasers." Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/626375.

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Vertical external-cavity surface-emitting lasers are ideal testbeds for studying the influence of the non-equilibrium many-body dynamics on mode locking. As we will show in this thesis, ultra short pulse generation involves a marked departure from Fermi carrier distributions assumed in prior theoretical studies. A quantitative model of the mode locking dynamics is presented, where the semiconductor Bloch equations with Maxwell’s equation are coupled, in order to study the influences of quantum well carrier scattering on mode locking dynamics. This is the first work where the full model is solv
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8

Podzimski, Reinold Ephraim [Verfasser]. "Shift currents in bulk GaAs and GaAs quantum wells analyzed by a combined approach of k.p perturbation theory and the semiconductor Bloch equations / Reinold Ephraim Podzimski." Paderborn : Universitätsbibliothek, 2016. http://d-nb.info/1123126739/34.

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9

Moussa, Jonathan Edward. "The Schroedinger-Poisson selfconsistency in layered quantum semiconductor structures." Link to electronic thesis, 2003. http://www.wpi.edu/Pubs/ETD/Available/etd-1124103-230904/.

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10

Penny, Melissa. "Mathematical modelling of dye-sensitised solar cells." Queensland University of Technology, 2006. http://eprints.qut.edu.au/16270/.

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This thesis presents a mathematical model of the nanoporous anode within a dyesensitised solar cell (DSC). The main purpose of this work is to investigate interfacial charge transfer and charge transport within the porous anode of the DSC under both illuminated and non-illuminated conditions. Within the porous anode we consider many of the charge transfer reactions associated with the electrolyte species, adsorbed dye molecules and semiconductor electrons at the semiconductor-dye- electrolyte interface. Each reaction at this interface is modelled explicitly via an electrochemical equation, res
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11

McBride, Patrick M. "The Effect of Polarization and InGaN Quantum Well Shape in Multiple Quantum Well Light Emitting Diode Heterostructures." DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/822.

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Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple qu
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12

Knies, Susanne. "Schwache Lösungen von Halbleitergleichungen im Falle von Ladungstransport mit Streueffekten." Bonn : [s.n.], 1998. http://catalog.hathitrust.org/api/volumes/oclc/41464657.html.

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13

Arkhipov, Rostislav. "Modeling of mode-locking regimes in lasers." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2015. http://dx.doi.org/10.18452/17190.

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In dieser Arbeit werden einige Probleme im Zusammenhang mit der Erzeugung ultrakurzer Pulse in modengekoppelten Lasern unter Verwendung analytischer und numerischer Methoden theoretisch untersucht. Weiterhin werden einige Resultate über die Strahlung resonanter Medien, welche durch einen ultrakurzen Überlichtgeschwindigkeits-Lichtpuls angeregt werden, dargestellt.<br>In this thesis current problems related to the generation of short optical pulses in mode-locked lasers are considered in a theoretical context. We use numerical and analytical methods to study these problems. Additionally, the pr
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14

Le, Coz Yannick L. "Semiconductor device simulation : a spectral method for solution of the Boltzmann transport equation." Thesis, Massachusetts Institute of Technology, 1988. http://hdl.handle.net/1721.1/14482.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.<br>Title as it appeared in M.I.T. Graduate List, February 1988: Simulation of semiconductor devices : a spectral method for solution of the Boltzmann transport equation.<br>Includes bibliographical references (leaves 193-195).<br>by Yannick L. Le Coz.<br>Ph.D.
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15

McGarvey, Brian Scott. "Coupling of Solid-State and Electromagnetic Equations for the Computationally Efficient Time-Domain Modeling and Design of Wireless Packaged Geometries with NonlinearActive Devices." Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14551.

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This document contains a proposal for the creation of a simulator that can accurately model the interaction of electromagnetic (EM) and semiconductor effects for modern wireless devices including nonlinear and/or active devices. The proposed simulator couples the balanced semiconductor equations (charge, momentum, kinetic energy) with a FDTD full-wave Yee-based electromagnetic (EM) simulator. The resultant CAD tool is able to model the response of one semiconductor device to both small signal and DC bias based on the process parameters (material, charge distribution and doping) without any
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16

McGarvey, Brian Scott. "Coupling of solid-state and electromagnetic equations for the computationally efficient time-domain modeling and design of wireless packaged geometries with nonlinear/active devices." Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-04092007-055514/.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007.<br>Tentzeris, Manos, Committee Chair ; Laskar, Joy, Committee Member ; Papapolymerou, John, Committee Member.
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17

Scheidt, Torsten. "Non-linear optical diagnostics of non-centrosymmetric opto-electronic semiconductor materials." Thesis, Stellenbosch : University of Stellenbosch, 2006. http://hdl.handle.net/10019.1/17332.

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18

Imhof, Sebastian. "Mikroskopische Theorie der optischen Eigenschaften indirekter Halbleiter-Quantenfilme." Doctoral thesis, Universitätsbibliothek Chemnitz, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-81928.

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Indirekte Halbleiter, wie beispielsweise Silizium, zählen bei technischen Anwendungen zu den wichtigsten halbleitenden Materialien. Die indirekte Bandstruktur führt jedoch dazu, dass diese Materialien schlechte Lichtemitter sind. Die theoretische Beschreibung der optischen Eigenschaften dieser Materialien wurde in früheren Betrachtungen über phänomenologische Ansätze verfolgt. In dieser Arbeit wird eine mikroskopische Theorie, basierend auf den Heisenberg-Bewegungsgleichungen, entwickelt, um die Prozesse im Bereich der indirekten Energielücke zu beschreiben. Nach Herleitung der relevanten Glei
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19

Niclot, Bernard. "Etude numerique de l'equation de boltzmann des semiconducteurs par methode particulaire." Palaiseau, École polytechnique, 1988. http://www.theses.fr/1988EPXXX002.

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Resolution de cette equation dans une geometrie simplifiee et demonstration de la validite de cette methode tant pour les modeles de collision lineaires (anteraction optique ou intervallee) que non-lineaires (prise en compte du principe de pauli, ou interaction interelectroniques). Une echelle numerique detaillee et une etude theorique de convergence et de stabilite viennent completer ces resultats
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20

Ali, Syed Ashraf. "Phonon Boltzmann Transport Equation (BTE) Based Modeling of Heat Conduction in Semiconductor Materials at Sub-Micron Scales." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1482776207590992.

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21

Ostatnicky, Tomas. "Model calculation of four-wave mixing polarization and dynamics in bulk and confined semiconductors." Université Louis Pasteur (Strasbourg) (1971-2008), 2005. https://publication-theses.unistra.fr/public/theses_doctorat/2005/OSTATNICKY_Tomas_2005.pdf.

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22

Mihaylov, Deyan. "Aspects of Photoexcited Dynamics in Semiconductor Nanostructures from Many-Body Perturbation Theory Utilizing Density Functional Theory Simulation Results." Diss., North Dakota State University, 2019. https://hdl.handle.net/10365/29401.

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Semiconductor nanostructures are currently an active area of research, especially in the field of photovoltaics as they will play a major role in next generation solar devices that break the current theoretical limit for light-to-current conversion. For instance, the efficiency of the nanostructure-based solar cells can be increased due to carrier multiplication, or multiple exciton generation (MEG) process, where absorption of a single energetic photon results in the generation of several charge carriers. In order to design nanostructures with the desired properties, a detailed theoretical ap
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23

Kulkarni, Aditya. "Simulation of three dimensional current spreading in photonic crystal VCSEL structures." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/28254.

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24

Bajracharya, Pradeep. "Relaxation Dynamics and Decoherence of Excitons in II-VI Semiconductor Nanostructures." University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1186757546.

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25

Uschanoff, Nicolas. "Dynamique spectro-temporelle d'une diode laser en cavité externe : application à la spectroscopie d'absorption haute sensibilité par intracavité laser." Université Joseph Fourier (Grenoble), 1995. http://www.theses.fr/1995GRE10243.

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Nous avons etudie le comportement d'un spectrometre d'absorption intracavite laser (i. C. L. A. S. ) utilisant un milieu amplificateur a semi-conducteur. Une etude theorique, basee sur les equations de bilan du laser en cavite externe, permet de mettre en evidence, d'une part, que l'important taux d'emission spontanee present dans les semi-conducteurs est une limitation pour la methode de mesure, d'autre part, que le coefficient de reflexion residuel non nul des faces de la diode conduit inevitablement a un spectre constitue d'amas, et enfin, que la presence d'une raie d'absorption spectrallem
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26

Massol, Jean-Luc. "Représentation des phénomenes de diffusion dans la modélisation des composants bipolaires de puissance : Application à la simulation du recouvrement inverse de la diode." Toulouse, INSA, 1993. http://www.theses.fr/1993ISAT0017.

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Ce memoire est consacre a la representation des phenomenes de diffusion dans les composants bipolaires de puissance en vue de la simulation realiste de leur comportement dans les circuits. Pour le cas de la diode de puissance, l'auteur propose a cet effet differentes methodes d'obtention de la solution de l'equation de diffusion des porteurs en zone centrale, exactes ou approchees, mais toujours reliees aux parametres physiques et technologiques du composant. Parmi ces outils, le plus complet consiste en une ligne r-c dont les parametres varient avec l'epaisseur de la zone de stockage. Cette l
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27

Bessemoulin-Chatard, Marianne. "Développement et analyse de schémas volumes finis motivés par la présentation de comportements asymptotiques. Application à des modèles issus de la physique et de la biologie." Phd thesis, Université Blaise Pascal - Clermont-Ferrand II, 2012. http://tel.archives-ouvertes.fr/tel-00836514.

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Cette thèse est dédiée au développement et à l'analyse de schémas numériques de type volumes finis pour des équations de convection-diffusion, qui apparaissent notamment dans des modèles issus de la physique ou de la biologie. Nous nous intéressons plus particulièrement à la préservation de comportements asymptotiques au niveau discret. Ce travail s'articule en trois parties, composées chacune de deux chapitres. Dans la première partie, nous considérons la discrétisation du système de dérive diffusion linéaire pour les semi-conducteurs par le schéma de Scharfetter-Gummel implicite en temps. No
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28

Ding, Hao. "Spectres optiques de diodes laser : methodes d'analyse des spectres, modelisation physique." Paris 11, 1988. http://www.theses.fr/1988PA112259.

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Etude de deux appareils de mesure de spectres optiques. Realisation d'un appareil a reseau grave et a dtc. Le cycle de mesure et la resolution obtenue sont 10 ms et 0,2 nm. Developpement d'un ensemble de programmes. Proposition de l'appareil a compensateur de babinet en vue de realiser des analyseurs compacts. - lasers a semiconducteurs : etude de leurs caracteristiques en relation avec les equations de continuite. Simulation des forces de langevin. Amelioration des equations classiques de continuite. Etude du fonctionnement continu, comportement transitoire, problemes de commution de gain, de
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29

Quirion, David. "Transport cohérent et spectroscopie tunnel dans les hétérostructures supraconductrices." Phd thesis, Université Joseph Fourier (Grenoble), 2001. http://tel.archives-ouvertes.fr/tel-00003439.

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Au cours de cette thèse, nous avons étudié l'influence d'une barrière tunnel en transport cohérent. Les structures présentées dans ce manuscrit ont toutes en commun une barrière tunnel et une interface Supraconducteur/métal Normal (S/N). L'interface S/N est le siège de la réflexion d'Andreev qui régit la transformation d'un courant normal (à une particule) en un courant supraconducteur (à deux particules). Ce processus conduit à l'effet de proximité classique. Nous avons tout d'abord étudié des contacts nitrure de titane/silicium fortement dopé. La barrière Schottky présente à l'interface frus
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30

Rouxel, Yann. "Coévaporation avec masquage mécanique de ZnSe et de LaF3, pour la réalisation de couches minces à profils d'indice continus périodiques." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10096.

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Dans une etude theorique des structures a profil d'indice continu, il est montre que l'essentiel des proprietes spectrales des filtres a profil d'indice sinusoidal peut etre etudie de maniere analytique a partir de certaines proprietes de l'equation de mathieu. L'etude experimentale de ces structures a ete realisee a l'aide d'une technique de coevaporation par masquage mecanique. L'equipement de depot realisant la coevaporation a ete developpe pour permettre la realisation de couches sur substrat chaud pour des profils d'indice quelconques. Un systeme de mesure optique multispectral in-situ en
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31

Hamzeh, Hani. "Résolution de l’équation de transport de Boltzmann pour les phonons et applications." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112371/document.

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Cette thèse est consacrée à l’étude de la dynamique et du transport des phonons via la résolution de l’équation de transport de Boltzmann (ETB) pour les Phonons. Un ‘solveur’ Monte Carlo dédié à la résolution de l’ETB des phonons dans l’espace réciproque, prenant en compte tous les processus d’interactions Normaux et Umklapp à trois-phonons, est proposé. Une prise en compte rigoureuse des lois de conservation de l’énergie et de la quantité de mouvement est entreprise. Des relations de dispersion réalistes, intégrant tous les modes de polarisations, sont considérées. Le calcul des taux d’intera
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32

Bleuse, Joël. "Effets electro-optiques dans les superreseaux semiconducteurs." Paris 6, 1988. http://www.theses.fr/1988PA066088.

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33

Rosenbaum, Tommy. "Performance prediction of a future silicon-germanium heterojunction bipolar transistor technology using a heterogeneous set of simulation tools and approaches." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0550/document.

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Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évalu
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34

Brum, José Antonio. "Etude theorique des proprietes electroniques des heterostructures de semiconducteurs." Paris 7, 1987. http://www.theses.fr/1987PA077006.

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Relations de dispersion des porteurs dans le plan des couches, avec attention particuliere aux sous-bandes de valence issues des extrema gamma ::(8) des materiaux hotes; etude des problemes coulombiens avec resolution du probleme de l'exciton et etude de la raie d'emission associee aux recombinaisons electron-trou piege dans les puits quantiques gaas/algaas. Effets d'un champ electrique longitudinal sur les niveaux d'energie a une et deux particules; interpretations de la stabilite de l'exciton et etude des niveaux d'energie d'impurete et des super reseaux "dents de scie". Etude de la capture
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35

Camescasse, François-Xavier. "Etude femtoseconde de la relaxation des electrons dans les semiconducteurs en regime non-markovien." Palaiseau, Ecole polytechnique, 1998. http://www.theses.fr/1998EPXX0076.

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Cette these porte sur la relaxation des electrons dans les semiconducteurs et plus particulierement dans l'arseniure de gallium. Elle nous renseigne sur les processus fondamentaux, notamment les collisions, qui permettent aux electrons de changer d'energie et determinent la rapidite des dispositifs electroniques ou optoelectroniques. L'etude repose sur l'utilisation de lasers a impulsions femtosecondes et sur une methode pompe-sonde originale car non-degeneree: l'impulsion pompe injecte des electrons et des trous en un temps tres bref, tandis que l'impulsion sonde est accordee sur une autre tr
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36

Kéfélian, Fabien. "Corrélation du bruit de phase de lasers à réseau de Bragg par injection optique : Application à la génération et au transport sur fibre de signaux radiofréquence." Phd thesis, Télécom ParisTech, 2005. http://tel.archives-ouvertes.fr/tel-00011613.

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Le mélange de deux faisceaux laser sur un photo-détecteur permet de générer un signal radiofréquence jusqu'au THz. Par corrélation des deux sources optiques, le signal obtenu peut acquérir la pureté spectrale requise pour les réseaux de communications radio sur fibre. Notre travail porte sur la méthode de corrélation par accrochage optique sur un peigne de fréquences. L'injection optique permet de transférer le bruit de phase d'un laser maître, pris comme référence, à un laser esclave. En utilisant deux harmoniques d'un laser modulé en fréquence comme sources distinctes d'injection, les bruits
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37

Gallego, Samy. "Modélisation Mathématique et Simulation Numérique de Systèmes Fluides Quantiques." Phd thesis, Université Paul Sabatier - Toulouse III, 2007. http://tel.archives-ouvertes.fr/tel-00218256.

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Le sujet de la thèse porte sur l'étude d'une nouvelle classe de modèles de transport quantique: les modèles fluides quantiques issus du principe de minimisation d'entropie. Ces modèles ont été dérivés dans deux articles publiés en 2003 et 2005 par Degond, Méhats et Ringhofer dans Journal of Statistical Physics en adaptant au cadre de la théorie quantique la méthode des moments développée par Levermore dans le cadre classique. Cette méthode consiste à prendre les moments de l'équation de Liouville quantique et à fermer ce système par un équilibre local (ou Maxwellienne quantique) défini comme m
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38

Li, Yi-Ming, and 李義明. "Monotone Iterative Method for the Numerical Solutions of Semiconductor Device Equations." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/92131480105701285807.

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碩士<br>國立交通大學<br>應用數學研究所<br>86<br>In this thesis, a monotone iterative method for solving two-dimensional semiconductor device equations is presented. We solve the semiconductor device equations by using decoupled approach to decouple three nonlinear PDE's, i.e., nonlinear Poisson equation, electron current continuity and hole current continuity equations. Then, finite difference approximation is applied to discretize the decoupled PDE's from which a system of nonlinear algebraic equations is obtained. Finally, monotone iterative method is applied to solve each system of nonlinear algebraic
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39

Chavez, Patrick Pablo. "A two-dimensional finite element analysis of the stationary semiconductor device equations." Thesis, 1997. http://hdl.handle.net/2429/6387.

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The ability to model the steady-state field inside active structures, such as a transistor, is an important aspect of monolithic microwave integrated circuit (MMIC) design. This paper focuses on such an active zone of semiconductor material, and presents a finite element analysis of the classical semiconductor equations. The semiconductor equations are very nonlinear and govern the potential and carrier density distributions in semiconductor materials. A previously developed finite element method (FEM) formulation of these equations, referred to as the current conservation model, is re-i
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40

Chang, Deng-Shun, and 張登舜. "Simulation of Deep Submicron N-Channel Metal-Oxide-Semiconductor Device with One-Dimensional Balance Equations." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/54214428019931820192.

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碩士<br>國立中山大學<br>電機工程學系<br>85<br>This paper presents a numerical model for deep submicron MOS devices using balance equations. For a deep submicron device, the electron temperature may be much higher than lattice temperature. We need to modify the conventional mobility model incorporating the electron temperature effects and surface scattering effects. Our model also include the DIBL (Drain Induced Barrier Lowering) effect which the threshold voltage shift is strongly effected in the short channel. Finally, comparing the balance equation model with the drift-diffusion model and experimental
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41

徐瑜霄. "An Approach for Semiconductor Equations Using a Combination of Monotone Iterative Method and Newton's Method." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/tdn6ty.

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42

Collera, JUANCHO. "Bifurcations of Periodic Solutions of Functional Differential Equations with Spatio-Temporal Symmetries." Thesis, 2012. http://hdl.handle.net/1974/7166.

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We study bifurcations of periodic solutions with spatio-temporal symmetries of functional differential equations (FDEs). The two main results are: (1) a centre manifold reduction around a periodic solution of FDEs with spatio-temporal symmetries, and (2) symmetry-breaking bifurcations for symmetric rings of delay-coupled lasers. For the case of ODEs, symmetry-breaking bifurcations from periodic solutions has already been studied. We extend this result to the case of symmetric FDEs using a Centre Manifold Theorem for symmetric FDEs which reduces FDEs into ODEs on an integral manifold around a
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43

Brunk, Markus [Verfasser]. "Numerical coupling of thermal-electric network models and energy-transport equations including optoelectronic semiconductor devices / Markus Brunk." 2008. http://d-nb.info/98826451X/34.

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44

"Study of spectral regrowth and harmonic tuning in microwave power amplifier." 2000. http://library.cuhk.edu.hk/record=b5890270.

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Kwok Pui-ho.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2000.<br>Includes bibliographical references (leaves [79]-85).<br>Abstracts in English and Chinese.<br>Chapter CHAPTER 1 --- INTRODUCTION --- p.1<br>Chapter CHAPTER 2 --- NONLINEAR BEHAVIOR OF RF POWER AMPLIFIERS --- p.5<br>Chapter 2.1 --- Single Tone Excitation --- p.6<br>Chapter 2.1.1 --- AM-AM Conversion --- p.7<br>Chapter 2.1.2 --- AM-PM Conversion --- p.9<br>Chapter 2.2 --- Two-Tone Excitation --- p.11<br>Chapter 2.2.1 --- Intermodulation Distortion --- p.12<br>Chapter 2.3 --- Digitally Modulated Signal Excitation -
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45

Lin, Chic-Von, and 林志芳. "Semiconductor Device Simulation Based on Balance Equation Method." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/39635419108346964030.

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碩士<br>國立交通大學<br>電子工程系<br>88<br>The balance equation method derived from Boltzmann transport equation is presented. The relaxation rate approximation is accounted to nonparabolic band structure by using Monte Carlo method. The hydrodynamic simulation of submicron ballistic diode is described. The coupled system of the balance equations and Poisson’s equation are linearized by Newton’s iteration and solved by LU decomposition method. The transient distributions of the variables such as electrostatic potential, carrier concentration, velocity, and energy under equilibrium and during voltage ap
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46

Chen, Wanqiang. "Schrödinger equation Monte Carlo simulation of nano-scaled semiconductor devices." Thesis, 2004. http://hdl.handle.net/2152/1299.

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Chen, Wanqiang Register Leonard F. "Schrödinger equation Monte Carlo simulation of nano-scaled semiconductor devices." 2004. http://wwwlib.umi.com/cr/utexas/fullcit?p3150561.

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48

Gadau, Stephan [Verfasser]. "Finite element discretization of 3D energy transport equations for semiconductors / Stephan Gadau." 2007. http://d-nb.info/987483501/34.

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Zheng, Xin 1975. "Schrödinger equation Monte Carlo simulation of nanoscale devices." Thesis, 2007. http://hdl.handle.net/2152/3677.

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Some semiconductor devices such as lasers have long had critical dimensions on the nanoscale where quantum effects are critical. Others such as MOSFETs are now being scaled to within this regime. Quantum effects neglected in semiclassical models become increasing important at the nanoscale. Meanwhile, scattering remains important even in MOSFETs of 10 nm and below. Therefore, accurate quantum transport simulators with scattering are needed to explore the essential device physics at the nanoscale. The work of this dissertation is aimed at developing accurate quantum transport simulation tools f
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50

Su, Jing-Fang, and 蘇靜芳. "Monte Carlo Solution for the Boltzmann Transoprt Equation in Semiconductor Device Physics." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/02265712729792222625.

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碩士<br>國立交通大學<br>統計所<br>89<br>In this study, we devote ourselves to simulate the transport of particles in semiconductor devices. The Monte Carlo (MC) simulation is introduced to directly solve the Boltzmann Transport Equation (BTE) in semiconductor device physics. Two typical MC simulations, the single-particle MC simulation and the self-consistent MC (SCMC) simulation, are considered and some results are also presented.
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