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Journal articles on the topic 'Semiconductor equations'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Buot, F. A. "Generalized Semiconductor Bloch Equations." Journal of Computational and Theoretical Nanoscience 1, no. 2 (2004): 144–68. http://dx.doi.org/10.1166/jctn.2004.012.

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2

Pospíšek, Miroslav. "Nonlinear boundary value problems with application to semiconductor device equations." Applications of Mathematics 39, no. 4 (1994): 241–58. http://dx.doi.org/10.21136/am.1994.134255.

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3

TALANINA, I. B. "EXCITONIC SELF-INDUCED TRANSPARENCY IN SEMICONDUCTORS." Journal of Nonlinear Optical Physics & Materials 05, no. 01 (1996): 51–57. http://dx.doi.org/10.1142/s0218863596000064.

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The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical

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4

Dorey, A. P. "Rate Equations in Semiconductor Electronics." Electronics and Power 32, no. 9 (1986): 680. http://dx.doi.org/10.1049/ep.1986.0400.

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5

Sever, Michael, and Peter A. Markowich. "The Stationary Semiconductor Device Equations." Mathematics of Computation 49, no. 179 (1987): 306. http://dx.doi.org/10.2307/2008270.

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6

Markowich, P. A. "The stationary semiconductor device equations." Microelectronics Journal 26, no. 2-3 (1995): xxv—xxvi. http://dx.doi.org/10.1016/0026-2692(95)90018-7.

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7

Pospíšek, Miroslav. "Convergent algorithms suitable for the solution of the semiconductor device equations." Applications of Mathematics 40, no. 2 (1995): 107–30. http://dx.doi.org/10.21136/am.1995.134283.

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8

Nikonov, D. E., and G. I. Bourianoff. "Spin Gain Transistor in Ferromagnetic Semiconductors—The Semiconductor Bloch-Equations Approach." IEEE Transactions On Nanotechnology 4, no. 2 (2005): 206–14. http://dx.doi.org/10.1109/tnano.2004.837847.

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9

Combescot, M., O. Betbeder-Matibet, and M. N. Leuenberger. "Analytical approach to semiconductor Bloch equations." EPL (Europhysics Letters) 88, no. 5 (2009): 57007. http://dx.doi.org/10.1209/0295-5075/88/57007.

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10

Frehse, J., and J. Naumann. "Stationary Semiconductor Equations Modeling Avalanche Generation." Journal of Mathematical Analysis and Applications 198, no. 3 (1996): 685–702. http://dx.doi.org/10.1006/jmaa.1996.0108.

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11

Burger, M., H. W. Engl, A. Leitao, and P. A. Markowich. "On Inverse Problems for Semiconductor Equations." Milan Journal of Mathematics 72, no. 1 (2004): 273–313. http://dx.doi.org/10.1007/s00032-004-0025-6.

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12

Ma, Xi Ying. "Study of the Electrical Properties of Monolayer MoS₂ Semiconductor." Advanced Materials Research 651 (January 2013): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.

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We present the study of the electrical properties of monolayer MoS2 in terms of semiconductor theory. The free electron and hole concentrations formulas in two-dimensional (2D) semiconductors have been developed based on three-dimensional (3D) semiconductors theory, and derived the intrinsic carrier concentration equation of 2D system. Using these equations, we simulated the intrinsic carrier concentration in monolayer MoS2 with temperature. The intrinsic carrier density in monolayer MoS2 increases exponentially with temperature, but it lows a few orders of magnitude than that of 3D semiconduc

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13

Tonkoshkur, A. S., A. B. Glot, and A. V. Ivanchenko. "Basic models in dielectric spectroscopy of heterogeneous materials with semiconductor inclusions." Multidiscipline Modeling in Materials and Structures 13, no. 1 (2017): 36–57. http://dx.doi.org/10.1108/mmms-08-2016-0037.

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Purpose The purpose of this paper is to develop the models of the dielectric permittivity dispersion of heterogeneous systems based on semiconductors to a level that would allow to apply effectively the method of broadband dielectric spectroscopy for the study of electronic processes in ceramic and composite materials. Design/methodology/approach The new approach for determining the complex dielectric permittivity of heterogeneous systems with semiconductor particles is used. It includes finding the analytical expression of the effective dielectric permittivity of the separate semiconductor pa

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14

Rossani, A. "Semiconductor spintronics: The full matrix approach." Modern Physics Letters B 29, no. 35n36 (2015): 1550243. http://dx.doi.org/10.1142/s0217984915502437.

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A new model, based on an asymptotic procedure for solving the spinor kinetic equations of electrons and phonons is proposed, which gives naturally the displaced Fermi–Dirac distribution function at the leading order. The balance equations for the electron number, energy density and momentum, plus the Poisson’s equation, constitute now a system of six equations. Moreover, two equations for the evolution of the spin densities are added, which account for a general dispersion relation.

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15

An, Dao Khac. "Important Features of Anomalous Single-Dopant Diffusion and Simultaneous Diffusion of Multi-Dopants and Point Defects in Semiconductors." Defect and Diffusion Forum 268 (November 2007): 15–36. http://dx.doi.org/10.4028/www.scientific.net/ddf.268.15.

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This paper summarizes some of the main results obtained concerning aspects of anomalous single-dopant diffusion and the simultaneous diffusion of multi-diffusion species in semiconductors. Some important explanations of theoretical/practical aspects have been investigated, such as anomalous phenomena, general diffusivity expressions, general non-linear diffusion equations, modified Arrhenius equations and lowered activation energy have been offered in the case of the anomalous fast diffusion for single-dopant diffusion process. Indeed, a single diffusion process is always a complex system invo

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16

Sieber, J., M. Radžiūnas, and K. R. Schneider. "DYNAMICS OF MULTISECTION SEMICONDUCTOR LASERS." Mathematical Modelling and Analysis 9, no. 1 (2005): 51–66. http://dx.doi.org/10.3846/13926292.2004.9637241.

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We investigate the longitudinal dynamics of multisection semiconductor lasers based on a model, where a hyperbolic system of partial differential equations is nonlinearly coupled with a system of ordinary differential equations. We present analytic results for that system: global existence and uniqueness of the initial‐boundary value problem, and existence of attracting invariant manifolds of low dimension. The flow on these manifolds is approximately described by the so‐called mode approximations which are systems of ordinary differential equations. Finally, we present a detailed numerical bi

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17

Hojatkashani, Leila. "Theoretical Investigation of Application of Combining Pristine C60 and doped C60 with Silicon and Germanium atoms for Solar cells ; A DFT Study." Oriental Journal of Chemistry 35, no. 1 (2019): 255–63. http://dx.doi.org/10.13005/ojc/350130.

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Solar energy and its conversion to electricity is an important research in the last decade. Solar cells are consist of a p-type semiconductor as donor and an n-type semiconductor as acceptor. Organic polymers as organic semiconductors are used in an organic solar cell. This research is a theoretical investigation of fullerene C60 as donor and C60 doped derivatives with Silicon and Germanium atoms as acceptors for basic structure of a solar cell. This research is done not only with using related equations but also with investigating theoretical UV-VIS spectrum of the chosen donors-acceptors and

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18

Wu, Xiaoqin, and Xiangsheng Xu. "Degenerate semiconductor device equations with temperature effect." Nonlinear Analysis: Theory, Methods & Applications 65, no. 2 (2006): 321–37. http://dx.doi.org/10.1016/j.na.2005.06.006.

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19

Meza, Juan C., and Ray S. Tuminaro. "A Multigrid Preconditioner for the Semiconductor Equations." SIAM Journal on Scientific Computing 17, no. 1 (1996): 118–32. http://dx.doi.org/10.1137/0917010.

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20

Nizette, Michel, Thomas Erneux, Athanasios Gavrielides, and Vassilios Kovanis. "Averaged equations for injection locked semiconductor lasers." Physica D: Nonlinear Phenomena 161, no. 3-4 (2002): 220–36. http://dx.doi.org/10.1016/s0167-2789(01)00375-x.

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21

Hosseini, Seyed Ebrahim, and Rahim Faez. "Novel Quantum Hydrodynamic Equations for Semiconductor Devices." Japanese Journal of Applied Physics 41, Part 1, No. 3A (2002): 1300–1304. http://dx.doi.org/10.1143/jjap.41.1300.

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22

Xia, G., Z. Wu, J. Chen, and Y. Lu. "Studying semiconductor lasers with multimode rate equations." Applied Optics 34, no. 9 (1995): 1523. http://dx.doi.org/10.1364/ao.34.001523.

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23

Parrott, J. E. "Book review: Rate Equations in Semiconductor Electronics." IEE Proceedings I Solid State and Electron Devices 134, no. 6 (1987): 176. http://dx.doi.org/10.1049/ip-i-1.1987.0037.

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24

SZMOLYAN, Peter. "ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 8, no. 2 (1989): 113–22. http://dx.doi.org/10.1108/eb010053.

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25

Northrop, D. C. "Book Review: Rate Equations in Semiconductor Electronics." International Journal of Electrical Engineering & Education 23, no. 4 (1986): 365. http://dx.doi.org/10.1177/002072098602300413.

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26

White, C. E. "Book Review: Rate Equations in Semiconductor Electronics." International Journal of Electrical Engineering Education 28, no. 1 (1991): 94–95. http://dx.doi.org/10.1177/002072099102800122.

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27

Pfleiderer, Hans. "Stepwise continuous solution of the semiconductor equations." Solid-State Electronics 38, no. 5 (1995): 1089–95. http://dx.doi.org/10.1016/0038-1101(95)98679-w.

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28

Maldon, B., and N. Thamwattana. "A Fractional Diffusion Model for Dye-Sensitized Solar Cells." Molecules 25, no. 13 (2020): 2966. http://dx.doi.org/10.3390/molecules25132966.

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Dye-sensitized solar cells have continued to receive much attention since their introduction by O’Regan and Grätzel in 1991. Modelling charge transfer during the sensitization process is one of several active research areas for the development of dye-sensitized solar cells in order to control and improve their performance and efficiency. Mathematical models for transport of electron density inside nanoporous semiconductors based on diffusion equations have been shown to give good agreement with results observed experimentally. However, the process of charge transfer in dye-sensitized solar cel

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29

Chaw, Chaw Su Nandar Hlaing, and Thiri Nwe. "Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor." Journal La Multiapp 1, no. 2 (2020): 14–21. http://dx.doi.org/10.37899/journallamultiapp.v1i2.108.

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This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of

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30

Abd-alla, Abo-el-nour N., N. F. Hasbullah, and Hala M. Hossen. "The Frequency Equations for Shear Horizontal Waves in Semiconductor/Piezoelectric Structures Under the Influence of Initial Stress." Journal of Computational and Theoretical Nanoscience 13, no. 10 (2016): 6475–81. http://dx.doi.org/10.1166/jctn.2016.5589.

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In this paper, we investigated analytically the frequency equations for shear horizontal wave propagation in a piezoelectric half space covered by a semiconductor film with initial stress effect. The semiconducting layer is influenced by initial stress and the interface between the piezoelectric substrate and the semiconductor layer. The governing equations of the mechanical displacement and electrical potential function under the effect of initial stress are obtained by solving the coupled electromechanical field equations of the piezoelectric half-space and the semiconductor film. Next, the

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31

SHAN, YUEH. "GENERALIZED SPHEROIDAL WAVE EQUATIONS FOR IMPURITY STATES IN A HETEROSTRUCTURE." Modern Physics Letters B 04, no. 17 (1990): 1099–102. http://dx.doi.org/10.1142/s0217984990001380.

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Within the framework of effective mass theory, a set of generalized spheroidal wave equations for the exact treatment of a shallow donor impurity in a semiconductor-semiconductor heterostructure is obtained from the relevant Schrödinger equation by the method of separation of variables in prolate spheroidal coordinates. The way of calculating the eigensolutions of these wave equations is briefly discussed.

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32

Erofeev, Vladimir I., Anna V. Leonteva, Alexey O. Malkhanov, and Ashot V. Shekoyan. "Localized nonlinear waves in a semiconductor with charged dislocations." EPJ Web of Conferences 250 (2021): 03012. http://dx.doi.org/10.1051/epjconf/202125003012.

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To describe a nonlinear ultrasonic wave in a semiconductor with charged dislocations, an evolution equation is obtained that generalizes the well-known equations of wave dynamics: Burgers and Korteweg de Vries. By the method of truncated decompositions, an exact analytical solution of the evolution equation with a kink profile has been found. The kind of kink (increasing, decreasing) and its polarity depend on the values of the parameters and their signs. An ultrasonic wave in a semiconductor containing numerous charged dislocations is considered. It is assumed that there is a constant electri

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33

Wilkey, Andrew, Joseph Suelzer, Yogesh Joglekar, and Gautam Vemuri. "Parity–Time Symmetry in Bidirectionally Coupled Semiconductor Lasers." Photonics 6, no. 4 (2019): 122. http://dx.doi.org/10.3390/photonics6040122.

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We report on the numerical analysis of intensity dynamics of a pair of mutually coupled, single-mode semiconductor lasers that are operated in a configuration that leads to features reminiscent of parity–time symmetry. Starting from the rate equations for the intracavity electric fields of the two lasers and the rate equations for carrier inversions, we show how these equations reduce to a simple 2 × 2 effective Hamiltonian that is identical to that of a typical parity–time (PT)-symmetric dimer. After establishing that a pair of coupled semiconductor lasers could be PT-symmetric, we solve the

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34

Zhou, Jing-Rong, and David K. Ferry. "2-D Simulation of Quantum Effects in Small Semiconductor Devices Using Quantum Hydrodynamic Equations." VLSI Design 3, no. 2 (1995): 159–77. http://dx.doi.org/10.1155/1995/93452.

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We discuss the basis of a set of quantum hydrodynamic equations and the use of this set of equations in the two-dimensional simulation of quantum effects in deep submicron semiconductor devices. The equations are obtained from the Wigner function equation-of-motion. Explicit quantum correction is built into these equations by using the quantum mechanical expression of the moments of the Wigner function, and its physical implication is clearly explained. These equations are then applied to numerical simulation of various small semiconductor devices, which demonstrate expected quantum effects, s

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35

BRUNK, MARKUS, and ANSGAR JÜNGEL. "SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS." Mathematical Models and Methods in Applied Sciences 18, no. 12 (2008): 2125–50. http://dx.doi.org/10.1142/s0218202508003315.

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A coupled model with optoelectronic semiconductor devices in electric circuits is proposed. The circuit is modeled by differential-algebraic equations derived from modified nodal analysis. The transport of charge carriers in the semiconductor devices (laser diode and photo diode) is described by the energy-transport equations for the electron density and temperature, the drift-diffusion equations for the hole density, and the Poisson equation for the electric potential. The generation of photons in the laser diode is modeled by spontaneous and stimulated recombination terms appearing in the tr

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36

Levermore, C. David. "Moment Closure Hierarchies for the Boltzmann-Poisson Equation." VLSI Design 6, no. 1-4 (1998): 97–101. http://dx.doi.org/10.1155/1998/39370.

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We outline a systematic nonperturbative derivation of a hierarchy of closed systems of moment equations that can be applied to any kinetic description of electrons in a semiconductor. This entropy based closure procedure extends one that was introduced in the context of gas dynamics. In the context of semiconductors, this procedure yields generalizations of socalled hydrodynamic models. It is illustrated on the semiclassical Boltzmann-Poisson equation for a single conduction band in the parabolic band approximation.

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37

Zhao, Peiji, and H. L. Cui. "Quantum transport equations for two-band semiconductor systems." Physics Letters A 252, no. 5 (1999): 243–47. http://dx.doi.org/10.1016/s0375-9601(98)00954-2.

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38

Guo, Xiulan, and Kaitai Li. "ASYMPTOTIC BEHAVIOR OF THE DRIFT-DIFFUSION SEMICONDUCTOR EQUATIONS." Acta Mathematica Scientia 24, no. 3 (2004): 385–94. http://dx.doi.org/10.1016/s0252-9602(17)30162-5.

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39

Glutsch, S., and D. S. Chemla. "Semiconductor Bloch equations in a homogeneous magnetic field." Physical Review B 52, no. 11 (1995): 8317–22. http://dx.doi.org/10.1103/physrevb.52.8317.

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40

Royo, P., R. Koda, and L. A. Coldren. "Rate equations of vertical-cavity semiconductor optical amplifiers." Applied Physics Letters 80, no. 17 (2002): 3057–59. http://dx.doi.org/10.1063/1.1476056.

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41

Bonitz, M., J. W. Dufty, and Cheng Sub Kim. "BBGKY Approach to Non-Markovian Semiconductor Bloch Equations." physica status solidi (b) 206, no. 1 (1998): 181–87. http://dx.doi.org/10.1002/(sici)1521-3951(199803)206:1<181::aid-pssb181>3.0.co;2-0.

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42

Shen, Wen-Zhong, and Zhen-Ya Li. "General dispersion equations for diluted magnetic semiconductor superlattices." physica status solidi (b) 174, no. 1 (1992): 241–45. http://dx.doi.org/10.1002/pssb.2221740124.

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43

Markowich, P. A., and Ch A. Ringhofer. "Stability of the Linearized Transient Semiconductor Device Equations." ZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik 67, no. 7 (1987): 319–32. http://dx.doi.org/10.1002/zamm.19870670710.

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44

Fang, W. F., and K. Ito. "Asymptotic Behavior of the Drift-Diffusion Semiconductor Equations." Journal of Differential Equations 123, no. 2 (1995): 567–87. http://dx.doi.org/10.1006/jdeq.1995.1173.

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45

Pimbley, Joseph M. "The Stationary Semiconductor Device Equations. (Peter A. Markowich)." SIAM Review 29, no. 4 (1987): 671–73. http://dx.doi.org/10.1137/1029145.

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46

Kerkhoven, Thomas. "On the One-Dimensional Current Driven Semiconductor Equations." SIAM Journal on Applied Mathematics 51, no. 3 (1991): 748–74. http://dx.doi.org/10.1137/0151038.

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47

Vänskä, O., J. Nieminen, M. Kira, S. W. Koch, and I. Tittonen. "Structure-independent semiconductor luminescence equations for quantum rings." Physica Scripta T160 (April 1, 2014): 014044. http://dx.doi.org/10.1088/0031-8949/2014/t160/014044.

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48

Efrat, Ilan, and Moshe Israeli. "A HYBRID SOLUTION OF THE SEMICONDUCTOR DEVICE EQUATIONS." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 10, no. 4 (1991): 215–29. http://dx.doi.org/10.1108/eb051700.

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49

Bjork, G., and Y. Yamamoto. "Analysis of semiconductor microcavity lasers using rate equations." IEEE Journal of Quantum Electronics 27, no. 11 (1991): 2386–96. http://dx.doi.org/10.1109/3.100877.

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50

Hui Rong-Qing and Tao Shang-Ping. "Improved rate equations for external cavity semiconductor lasers." IEEE Journal of Quantum Electronics 25, no. 6 (1989): 1580–84. http://dx.doi.org/10.1109/3.29296.

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