Relevant bibliographies by topics / Semiconductor Filing

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Semiconductor Filing'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Semiconductor Filing"

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Higgins, Jason. "The Process of Inventing a Patentable Item." EDFA Technical Articles 18, no. 2 (May 1, 2016): 54–55. http://dx.doi.org/10.31399/asm.edfa.2016-2.p054.

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Abstract This column discusses the effect of changes in the U.S. patent process and explains how they benefit failure analysts. He also relates one of his own experiences with filing for a patent based on an observation he and a colleague made in a semiconductor FA lab.
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Xue, Xiaohuan, Jianjun Song, and Rongxi Xuan. "Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process." Advances in Condensed Matter Physics 2019 (September 16, 2019): 1–9. http://dx.doi.org/10.1155/2019/2096854.

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As an indirect band gap semiconductor, germanium (Ge) can be transformed into a direct band gap semiconductor through some specific modified methods, stress, and alloying effect. Direct band gap-modified Ge semiconductors with a high carrier mobility and radiation recombination efficiency can be applied to optoelectronic devices, which can improve the luminous efficiency dramatically, and they also have the potential application advantages in realizing monolithic optoelectronic integration (MOEI) and become a research hotspot in material fields. Among the various implementations of Ge band gap-type conversion, the related methods that are compatible with the Si process are most promising. It is such a method to etch around the Ge epitaxial layer on the Si substrate and introduce the biaxial tensile stress by SiGe selective filling. However, the influence of the width of the epitaxial layer, Ge composition, and Ge mesa region width on strain distribution and intensity is not clear yet. Accordingly, a finite element stress model of the selective epitaxy-induced direct band gap Ge scheme is established to obtain the material physical and geometric parameters of the Si1−xGex growth region. The result of finite element simulation indicates when the Si1−xGex epitaxial layer is 150–250 nm wide and the Ge composition is 0.3∼0.5, Ge mesa with 20–40 nm in width can be transformed into direct band gap semiconductors in the depth of 0–6 nm. The theoretical results can provide an important theoretical basis for the realization of subsequent related processes.
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Jin, Xilian, Xiao-Jia Chen, Tian Cui, Ho-kwang Mao, Huadi Zhang, Quan Zhuang, Kuo Bao, et al. "Crossover from metal to insulator in dense lithium-rich compound CLi4." Proceedings of the National Academy of Sciences 113, no. 9 (February 16, 2016): 2366–69. http://dx.doi.org/10.1073/pnas.1525412113.

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At room environment, all materials can be classified as insulators or metals or in-between semiconductors, by judging whether they are capable of conducting the flow of electrons. One can expect an insulator to convert into a metal and to remain in this state upon further compression, i.e., pressure-induced metallization. Some exceptions were reported recently in elementary metals such as all of the alkali metals and heavy alkaline earth metals (Ca, Sr, and Ba). Here we show that a compound of CLi4 becomes progressively less conductive and eventually insulating upon compression based on ab initio density-functional theory calculations. An unusual path with pressure is found for the phase transition from metal to semimetal, to semiconductor, and eventually to insulator. The Fermi surface filling parameter is used to describe such an antimetallization process.
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Krylov, V. P., and A. M. Bogachev. "Deep Trapping Centers Relaxation in Transistors and Integrated Circuits." Proceedings of Universities. ELECTRONICS 25, no. 6 (December 2020): 568–72. http://dx.doi.org/10.24151/1561-5405-2020-25-6-568-572.

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For ensuring the efficiency of the semiconductor electronic component base for apparatus, responsible for application, an optimal combination of statistical (group) and physical-technological (individual) reliability assessments is required. In the paper a thermodynamic approach, based on the deep-level transient spectroscopy in semiconductors promising means of individual rejection of potentially unreliable electronic component base has been proposed. For transistors and integrated circuits, the dependences of the amplitude of capacitance transient, caused by the bulk and surface defects of various nature on the repetition rate of electric filling pulses of deep levels, have been obtained. For multi-pin CMOS IC, the two-pole connection schemes to the spectrometer have been proposed. The obtained dependences show individual differences of studied specimens of various manufacturers as well as individual specimens from the same production batch. The performed studies have shown the promises of using the methods of the relaxation spectroscopy of deep level as the means of additional quality control of semiconductor devices and CMOS microcircuits both in the production process and in rejection of the items with potential defects, not specified by the project of engineering defect formation.
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NÁDAŽDY, V., and I. THURZO. "DLTS AS A LOCAL PROBE OF CONCENTRATION AND DEPTH OF TRAP LEVELS." International Journal of Modern Physics B 08, no. 13 (June 15, 1994): 1765–79. http://dx.doi.org/10.1142/s0217979294000750.

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Complementarity of the capacitance and charge deep level transient spectroscopy (DLTS) is the idea which led us to an advanced method for profiling trap levels in semiconductors. This unifying approach to the space-charge spectroscopy, on grounds of applying the small-amplitude-filling pulse mode and evaluating the trapped charge balance, allows one to implement it in practice while using currently available instrumentation. A simple formalism is sufficient to obtain the demanded trap level depth. The usefulness of this method is demonstrated on bulk traps found in two different metal-insulator-semiconductor (MIS) capacitors. We propose also a new experimental technique providing the option of a direct determination of the trap depth from a single temperature scan. In addition, we found an expression for the relative detection sensitivity of the capacitance DLTS and justified quantitatively the earlier reported improved relative sensitivity of the charge transient spectroscopy.
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Sparks, Justin R., Jennifer L. Esbenshade, Rongrui He, Noel Healy, Todd D. Day, Derek W. Keefer, Pier J. A. Sazio, Anna C. Peacock, and John V. Badding. "Selective Semiconductor Filling of Microstructured Optical Fibers." Journal of Lightwave Technology 29, no. 13 (July 2011): 2005–8. http://dx.doi.org/10.1109/jlt.2011.2156384.

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Han, Sejin, and K. K. Wang. "Integrated Flow Analysis During Filling and Post-Filling Stage of Semiconductor Encapsulation." Journal of Electronic Packaging 122, no. 1 (August 17, 1999): 20–27. http://dx.doi.org/10.1115/1.483127.

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In this paper, flow during the filling and post-filling stages in semiconductor chip encapsulation has been analyzed. A finite-element method based on the Hele-Shaw approximation is used for the flow analysis in the chip cavity. The compressibility of the epoxy-molding compound has been considered to analyze the post-filling stage. The model has been verified by comparing resulting predictions with experimental results. Specifically, pressure has been measured in a rectangular cavity and compared with simulation results. The calculated and experimental results show good agreement. [S1043-7398(00)00101-8]
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Eliseeva, Svetlana V., Irina V. Fedorova, and Dmitry I. Sementsov. "Photon Spectra of a Bragg Microresonator with Bigyrotropic Filling." Photonics 9, no. 6 (May 31, 2022): 391. http://dx.doi.org/10.3390/photonics9060391.

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In this article, we have obtained the transmission spectra of a microresonator structure with Bragg mirrors, the working cavity of which is filled with a magnetically active finely layered ferrite-semiconductor structure with material parameters controlled by an external magnetic field. It is shown that a change in the external field and the size of the cavity (filling layer thickness) provokes a controlled rearrangement of the transmission spectrum of TM and TE waves. The polarization characteristics of the microcavity, their dependence on the external field, and the ratio of the thicknesses of the layers that make up the period of the ferrite-semiconductor structure are investigated.
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Averkov, Y., Y. Prokopenko, and V. Yakovenko. "Eigenwave spectra of a solid-state plasma cylinder in a strong longitudinal magnetic field." RADIOFIZIKA I ELEKTRONIKA 26, no. 2 (2021): 37–45. http://dx.doi.org/10.15407/rej2021.02.037.

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Subject and Purpose. Eigenwave studies of various bounded structures make a prolific line of investigation in both modern radiophysics and solid-state and functional electronics. Conducting solids demonstrating plasma (semiconductor) properties attract particular attention. Owing to the high conductivity of semiconductors (as it is inversely proportional to the charge carrier effective mass that is smaller than the free electron mass), interest exists in propagation features of slow elliptical-polarization electromagnetic waves – helicons – in magnetized semiconductor waveguides. The present work aims to determine eigenwave spectra of a solid-state plasma cylinder in a strong constant concentric magnetic field. Methods and Methodology. The eigenwave theoretical study of a magnetoplasma cylinder in the free space is conducted in terms of Maxwell's equations. The motion equation of conduction electrons of a solid-state plasma is adopted with quasi-stationarity electromagnetic field conditions satisfied. The collision frequency of majority charge carriers is assumed substantially less than their cyclotron frequency. Results. The dispersion equation of a cylindrical solid-state plasma (semiconductor) waveguide has been obtained. It has been shown that a collisionless magnetoplasma waveguide supports propagation of bulk and surface helicons. The propagation is accompanied by the surface current flowing lengthways cylinder components. Charged particle collisions destroy the surface current and initiate additional (to helicons) H-type hybrid waves such that their phase velocities coincide with phase velocities of the helicons. It has been found that the nonreciprocity effect holds for the waveguide eigenwaves having identical field distribution structures but different azimuthal propagation directions, and it also does as soon as the external magnetic field changes its sense. Conclusion. The research results have deepened our understanding of physical properties of bounded structures with plasma-like filling media. More systematization has been added to the knowledge of eigenwave behavior of these structures in a quasi-stationarity electromagnetic field.
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Pei, Ke, Albert Ho Yuen Lau, and Paddy Kwok Leung Chan. "Understanding molecular surface doping of large bandgap organic semiconductors and overcoming the contact/access resistance in organic field-effect transistors." Physical Chemistry Chemical Physics 22, no. 13 (2020): 7100–7109. http://dx.doi.org/10.1039/d0cp00487a.

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Dissertations / Theses on the topic "Semiconductor Filing"

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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. https://etd.iisc.ac.in/handle/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and complicated valence band structure involved. Germanium is known to have the largest hole mobility of all the known semiconductors and is considered most suitable to fabricate high speed p-type devices. Moreover, it is also possible to integrate germanium and its alloy (Si1_zGex ) into the existing silicon technology. With the use of sophisticated growth techniques it has been possible to grow epitaxial layers of silicon and germanium on Si1_zGex alloy layers grown on silicon substrates. In tills thesis we investigate in detail the electrical properties of p-type germanium and n-type silicon thin films grown by these techniques. It is important to do a comparative study of transport in these two systems not only to understand the physics involved but also to study their compatibility in complementary field effect devices (cMODFET). The studies reported in this thesis lay emphasis both on the low and high field transport properties of these systems. We report experimental data for the maximum room temperature mobility of holes achieved m germanium thin films grown on Si1_zGex layers that is comparable to the mobility of electrons in silicon films. We also report experiments performed to study the high field degradation of carrier mobility due to "carrier heating" in these systems. We also report studies on the effect of lattice heating on mobility of carriers as a function of applied electric field. To understand the physics behind the observed phenomenon, we model our data based on the existing theories for low and high field transport. We report complete numerical calculations based on these theories to explain the observed qualitative difference in the transport properties of p-type germanium and ii-type silicon systems. The consistency between the experimental data and theoretical modeling reported in this work is very satisfactory.
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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and complicated valence band structure involved. Germanium is known to have the largest hole mobility of all the known semiconductors and is considered most suitable to fabricate high speed p-type devices. Moreover, it is also possible to integrate germanium and its alloy (Si1_zGex ) into the existing silicon technology. With the use of sophisticated growth techniques it has been possible to grow epitaxial layers of silicon and germanium on Si1_zGex alloy layers grown on silicon substrates. In tills thesis we investigate in detail the electrical properties of p-type germanium and n-type silicon thin films grown by these techniques. It is important to do a comparative study of transport in these two systems not only to understand the physics involved but also to study their compatibility in complementary field effect devices (cMODFET). The studies reported in this thesis lay emphasis both on the low and high field transport properties of these systems. We report experimental data for the maximum room temperature mobility of holes achieved m germanium thin films grown on Si1_zGex layers that is comparable to the mobility of electrons in silicon films. We also report experiments performed to study the high field degradation of carrier mobility due to "carrier heating" in these systems. We also report studies on the effect of lattice heating on mobility of carriers as a function of applied electric field. To understand the physics behind the observed phenomenon, we model our data based on the existing theories for low and high field transport. We report complete numerical calculations based on these theories to explain the observed qualitative difference in the transport properties of p-type germanium and ii-type silicon systems. The consistency between the experimental data and theoretical modeling reported in this work is very satisfactory.
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Hey, Andrew Stuart. "Series interconnects and charge extraction interfaces for hybrid solar cells." Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:f19e44a8-e394-4859-9649-734116bc22b8.

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This thesis investigates novel hole extraction interfaces and series interconnects for applications in organic photovoltaics, specifically in single junction solid-state dye-sensitized solar cells (DSSCs) and tandem DSSC/polymer bulk heterojunction solar cells. Improvements in hole extraction and device performance by using materials compatible with scalable deposition methods are presented, including tungsten- and molybdenum-disulphide (WS2 and MoS2), and p-type doped spiro-OMeTAD (2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)9,9'-spirobifluorene) nanoparticle dispersions. WS2 and MoS2 hole extraction layers increase averaged short circuit currents by 20% and 16% respectively, and power conversion efficiencies by 19% and 14% respectively when compared with control devices. Similarly, doped spiro-OMeTAD nano-particle layers improved short circuit current densities by 32% and efficiencies by 9%. Tandem device interconnects using these novel hole extraction formats have been fabricated, but although devices did exhibit rectification, overall performance was poor. Possible reasons for their limited success have been analysed. Dye-sensitized solar mini-modules are also reported. In order to assure the scalability of DSSC technology, these larger area devices were constructed using doctor blade coating to deposit the hole transporter material. As well as achieving a respectable maximum power conversion efficiency of 2.6%, it has also been shown that the extent to which hole transporter infiltrates the mesoporous photoanode of these devices may be tuned by altering substrate temperature during deposition. It was found that an optimal coating temperature of 70 degrees C produced the best efficiency, with a corresponding pore-filling fraction of 41%.
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Books on the topic "Semiconductor Filing"

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Wolf, E. L. Solar Cell Physics and Technologies. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198769804.003.0010.

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Solar cells are based on semiconductor pn junctions. Absorption of sunlight is optimal at bandgap energies near one electron volt, and greatly increases the reverse current density. The efficiency of the cell is described by the “filling factor”, and is limited, for single junction cells, by the Quiesser–Shockley limit, near 30 percent. Tandem cells, series combinations of cells, absorb a larger portion of the solar spectrum with higher efficiency but with greater complexity and cost. Such cells are used with focusing optics that inherently raises the efficiency, but also the complexity and cost. This is a textbook for physics, chemistry and engineering students interested in the future of energy as impacted by depletion of fossil fuels, and in the effects of fossil fuel burning on climate.
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Book chapters on the topic "Semiconductor Filing"

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Halperin, B. I. "Electrons in a Landau Level Near Half-Filling." In Optical Phenomena in Semiconductor Structures of Reduced Dimensions, 1. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1912-2_1.

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Willett, R. L., H. L. Stormer, D. C. Tsui, L. N. Pfeiffer, and K. W. West. "Temperature Dependence of Transport Coefficients of 2D Electron Systems at Very Small Filling Factors." In High Magnetic Fields in Semiconductor Physics II, 153–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_25.

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Fukami, Kazuhiro. "Filling of Porous Silicon with Metals by Electrochemical Reactions." In Nanostructured Semiconductors, 279–98. Pan Stanford Publishing, 2014. http://dx.doi.org/10.1201/b15634-8.

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Tiwari, Sandip. "Waves and particles in the crystal." In Semiconductor Physics, 78–136. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.003.0003.

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This chapter provides the groundwork necessary to mathematically describe the crystalline solid that is to be the semiconductor used to explore the variety of interactions and cause and chance behaviors that physics builds insights into. The crystalline environment can be portrayed as a space-filling periodic arrangement consisting of a lattice with an atomic basis. The periodic arrangement leads to real space and reciprocal space descriptions with unit cells—the Wigner-Seitz cell and the Brillouin and Jones zones—where a variety of characteristics can be represented. Bloch’s theorem with its modulation function of the plane wave of a quantized wavevector, momentum versus crystal momentum, together with the consequences of symmetries and periodic perturbation in the appearance of bandgaps, is discussed for electron states. Phonons as particles for periodic oscillations of atoms, their modes and various branches, and consequences of ionicity leading to frequency-dependent permittivity are discussed.
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Bykov, A. A., and S. A. Vitkalov. "Nonlinear Two-Dimensional Electron Conductivity at High Filling Factors." In Advances in Semiconductor Nanostructures, 49–58. Elsevier, 2017. http://dx.doi.org/10.1016/b978-0-12-810512-2.00003-2.

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A. Löthman, Per. "Graphene Nanopores." In Nanopores. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98737.

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Graphene is a two-dimensional, atomic thin, usually impermeable nanomaterial with astonishing electrical, magnetic and mechanical properties and can therefore at its own right be found in applications as sensors, energy storage or reinforcement in composite materials. By introducing nanoscale pores graphene alter and extend its properties beyond permeability. Graphene then resembles a nanoporous sensor, a nanoporous, atomic thin membrane which opens up for such varied applications such as water purification, industrial waste water treatment, mineral recovery, analytical chemistry separation, molecular size exclusion and supramolecular separations. Due to its nanoscopic size it can serve as nanofilters for ion separation even at ultralow nano- or picomolar concentrations. It is an obvious choice for DNA translocation, reading of the sequence of nucleotides in a DNA molecule, and other single molecular analyses as well for biomedical nanoscopic devices since dimensions of conventional membranes does not suffice in those applications. Even though graphene nanopores are known to be unstable against filling by carbon adatoms they can be stabilized by dangling bond bridging via impurity or foreign atoms resulting in a robust nanoporous material. Finally, graphene’s already exceptional electronic properties, its charge carriers exhibit an unusual high mobility and ballistic transport even at 300 K, can be made even more favorable by the presence of nanopores; the semimetallic graphene turns into a semiconductor. In the pores, semiconductor bands with an energy gap of one electron volt coexist with localized states. This may enable applications such as nanoscopic transistors.
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van Santen, Rutger, Djan Khoe, and Bram Vermeer. "Reaching Everyone." In 2030. Oxford University Press, 2010. http://dx.doi.org/10.1093/oso/9780195377170.003.0021.

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The majority of Earth’s inhabitants don’t have a telephone or e-mail, and many places still lie beyond the reach of established communication networks. That severely precludes development, meaning that new insights percolate through slowly and that essential services such as water provision are based on imprecise information. Lack of information exchange is also an obstacle to improving agriculture, education, and many other fields. Even in well-connected areas, networks are less dense than required to improve our safety and well-being. You need a fine-meshed network if you want to keep on top of the genesis of earthquakes, floods, climate change, and many other unstable systems. Sparsity in networks means a lack of control. Making network coverage more complete could help develop and stabilize our world. However, any attempt to extend networks raises significant problems, which we explore in this chapter using the example of radio networks. We should keep in mind, though, that similar phenomena are evident in other networks as well, including the power grid and social networks geared to education. At first sight, radio is an excellent technology for filling the gaps left by other communication technologies. Its capacity is restricted, however, because wireless communication is limited by basic laws of physics, obliging broadcasting and communication companies, for instance, to battle it out for their slice of the ether. The number of radio and TV stations, mobile phones, and satellite connections increases inexorably, filling up every patch of the electromagnetic spectrum that can be used for radio. The historical pattern has been to develop new techniques and then to lay claim to unused spectrum. The old medium-wave bands were the first to be used for radio programs. Broadcasters later adopted FM, exploiting higher frequencies at the price of reduced range. New semiconductor electronics then became faster and brought access to even higher frequencies. Once the first global standard for mobile communication (GSM) slots had been filled, new space was opened up at double the frequency. The latest third-generation (3G) mobile phone technologies—like the universal mobile telecommunication system (UMTS)—work with higher frequencies still.
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Conference papers on the topic "Semiconductor Filing"

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Meister, M., and C. McGinley. "Development of Patent Filing Figures in the Field of Microelectromechanical Devices." In 2006 International Semiconductor Conference. IEEE, 2006. http://dx.doi.org/10.1109/smicnd.2006.284017.

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Hatke, A. T., H. S. Chiang, M. A. Zudov, L. N. Pfeiffer, K. W. West, Jisoon Ihm, and Hyeonsik Cheong. "Zero differential resistance state at large filling factors." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666535.

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Liu, Chunling, J. K. Shen, Xingjie Wang, and Zhihui Ji. "A technique for improving contact filling with aluminum." In 2018 China Semiconductor Technology International Conference (CSTIC). IEEE, 2018. http://dx.doi.org/10.1109/cstic.2018.8369255.

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Hashimoto, Yuto, Shigetaka Otagiri, Hiroto Ogata, Satoshi Kamibayashi, Takafumi Endo, Yuki Endo, and Takahiro Kishioka. "Novel Gap Filling BARC with High Chemical Resistance." In 2019 China Semiconductor Technology International Conference (CSTIC). IEEE, 2019. http://dx.doi.org/10.1109/cstic.2019.8755648.

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Budantsev, M. V., A. G. Pogosov, D. A. Pokhabov, E. Yu Zhdanov, A. K. Bakarov, A. I. Toropov, J. C. Portal, Jisoon Ihm, and Hyeonsik Cheong. "Inverted hysteresis of magnetoresistance of a 2DEG at integer filling factors." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666521.

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Jiebin Gu, Bingjie Liu, Heng Yang, and Xinxin Li. "A fast and low-cost TSV/TGV filling method." In 2017 China Semiconductor Technology International Conference (CSTIC). IEEE, 2017. http://dx.doi.org/10.1109/cstic.2017.7919862.

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Wang, Xiaofang, Jiazhang Xu, Zhiqi Yuan, Yingbo Cheng, Zhaoqin Zeng, Yu Bao, Haifeng Zhou, Jingxun Fang, and Yu Zhang. "Investigation of 14 NM Contact Tungsten Gap-Filling Performance." In 2022 China Semiconductor Technology International Conference (CSTIC). IEEE, 2022. http://dx.doi.org/10.1109/cstic55103.2022.9856771.

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Jianhua Xu, Xuezhen Jing, Xiaoniu Fu, Xiaona Wang, Jingjing Tan, Ziying Zhang, and Beichao Zhang. "An optimized W process for metal gate electrode gap filling application." In 2015 China Semiconductor Technology International Conference (CSTIC). IEEE, 2015. http://dx.doi.org/10.1109/cstic.2015.7153396.

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Wang, Kai, Zhigang Zhang, Ping Wang, Lingzhi Xu, Shenzhou Lu, Andy Tan, Zhenjie Qiao, et al. "Study of Influence of STI Profile on Harp Gap-Filling Performance." In 2020 China Semiconductor Technology International Conference (CSTIC). IEEE, 2020. http://dx.doi.org/10.1109/cstic49141.2020.9282412.

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Umemura, E., H. Fukunaga, Y. Koga, and H. Nakayashiki. "A novel void detection technique for via filling process." In ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005. IEEE, 2005. http://dx.doi.org/10.1109/issm.2005.1513342.

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