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Relevant bibliographies by topics / Semiconductor interface theory

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Academic literature on the topic 'Semiconductor interface theory'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Semiconductor interface theory"

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NESTOKLON, M. O. "HOLE STATES LOCALIZED AT TYPE II HETEROINTERFACE." International Journal of Nanoscience 02, no. 06 (2003): 411–17. http://dx.doi.org/10.1142/s0219581x03001504.

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A theory of Tamm-like hole states at type II heterointerface has been developed for zink-blende semiconductors. The consideration has been carried out in the microscopic tight-binding model with allowance made for the spin-orbit splitting of the valence band. It has been demonstrated that the tight-binding method describes Tamm-like hole states at type II semiconductor interface. Localization energy dependence on interface tight-binding parameters has been analyzed.

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Rahmani, M. D., P. Masri, and L. Dobrzynski. "Interface response theory of N-layered discrete semiconductor superlattices." Journal of Physics C: Solid State Physics 21, no. 27 (1988): 4761–81. http://dx.doi.org/10.1088/0022-3719/21/27/007.

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Odenweller, T. "On the Theory of the Semiconductor/Electrolyte‐Interface (I)." Journal of The Electrochemical Society 137, no. 8 (1990): 2457–61. http://dx.doi.org/10.1149/1.2086960.

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Kovenskiy, I. M., S. V. Malysh, and V. V. Povetkin. "STRUCTURAL PECULIARITIES OF THE PROCESS OF ELECTROLYTIC CHROMIUM PLATING IN RESTORATION OF WORN PARTS." Oil and Gas Studies, no. 1 (March 1, 2018): 92–97. http://dx.doi.org/10.31660/0445-0108-2018-1-92-97.

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Processes occurring at the metal-electrolyte interface in chrome plating of parts with an inhomogeneous structure have been considered from the standpoint of the band theory of semiconductors. Similarity of processes in the systems metal - semiconductor and metal - electrolyte has been established. A technique for estimating the quality of surface preparation of worn parts for electrolytic chromium plating based on the results of measuring the spread of thermal EMF values has been validated.

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Nogami, Gyoichi. "Theory of Capacitance‐Voltage Characteristics of Semiconductor Electrodes with Interface States." Journal of The Electrochemical Society 133, no. 3 (1986): 525–31. http://dx.doi.org/10.1149/1.2108613.

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Kovalenko, Sergii, and Veniamin Soloviev. "Kinetics of the Elementary Act of Electrochemical Reactions at the Semiconductor–Electrolyte Solution Interface." Zeitschrift für Naturforschung A 69, no. 12 (2014): 654–58. http://dx.doi.org/10.5560/zna.2014-0063.

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AbstractIn the framework of the quantum-mechanical theory of elementary act of non-adiabatic electrochemical reactions, it is carried out the calculation of the discharge current of ions at the semiconductor-electrolyte solution interface using the model of isotropic spherically symmetric band. It is shown that our results generalize the well-known formulae for the current density obtained by Dogonadze, Kuznetsov, and Chizmadzhev [R. R. Dogonadze, A. M. Kuznetsov, and Yu. A. Chizmadzhev, The kinetics of some heterogeneous reactions at semiconductor-electrolyte interface, Zhur. Fiz. Khim. 38, 1

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Boroda, Yuri G., and Gregory A. Voth. "A theory for adiabatic electron transfer processes across the semiconductor/electrolyte interface." Journal of Chemical Physics 104, no. 16 (1996): 6168–83. http://dx.doi.org/10.1063/1.471274.

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Abgaryan, Karine, Ilya Mutigullin, and Dmitriy Bazhanov. "Multiscale Computational Model of Nitride Semiconductor Nanostructures." Advanced Materials Research 560-561 (August 2012): 1133–37. http://dx.doi.org/10.4028/www.scientific.net/amr.560-561.1133.

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Theoretical multiscale model of nitride semiconductor nanostructure is proposed. The model combines various computational methods such as density functional theory, molecular dynamics and kinetic Monte Carlo. As a first step of implementation of proposed approach ab initio calculations of structural and electronic properties of two different structures InN/Si and AlN/AlGaN/GaN heterostructures were carried out. In particular, the influence of oxygen on InN/Si adhesion energy was studied. AlN, GaN, AlxGa1-xN (x=0.33) spontaneous and piezoelectric polarizations as well as sheet carrier concentra

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CYWIŃSKI, ŁUKASZ, HANAN DERY, PARIN DALAL, and L. J. SHAM. "ELECTRICAL EXPRESSION OF SPIN ACCUMULATION IN FERROMAGNET/SEMICONDUCTOR STRUCTURES." Modern Physics Letters B 21, no. 23 (2007): 1509–29. http://dx.doi.org/10.1142/s021798490701395x.

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We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport thr

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Tidriri, Moulay D. "An alternative model to boundary and interface layer correctors in semiconductor theory: derivation and existence theory." Comptes Rendus de l'Académie des Sciences - Series I - Mathematics 332, no. 3 (2001): 271–76. http://dx.doi.org/10.1016/s0764-4442(00)01823-1.

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Dissertations / Theses on the topic "Semiconductor interface theory"

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Maani, Colette. "A study of some metal-semiconductor interfaces." Thesis, University of Ulster, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329499.

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Hilty, Floyd W. III. "Raman Spectroscopy View on the Electric-Field-Tuned Molecule-Semiconductor Interface Coupling." Bowling Green State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1429109628.

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Kechrakos, Dimitris. "Theory of atomic vibrations near crystal interfaces." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329924.

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Pezzotti, Simone. "DFT-MD simulations and theoretical SFG spectroscopy to characterize H-Bonded networks at aqueous interfaces : from hydrophobic to hydrophilic environments Structural definition of the BIL and DL: a new universal methodology to rationalize non-linear χ(2)(ω) SFG signals at charged interfaces, including χ(3)(ω) contributions What the Diffuse Layer (DL) Reveals in Non-Linear SFG Spectroscopy 2D H-Bond Network as the Topmost Skin to the Air-Water Interface Combining ab-initio and classical molecular dynamics simulations to unravel the structure of the 2D-HB-network at the air-water interface 2D-HB-Network at the air-water interface: A structural and dynamical characterization by means of ab initio and classical molecular dynamics simulations Spectroscopic BIL-SFG Invariance Hides the Chaotropic Effect of Protons at the Air-Water Interface Molecular hydrophobicity at a macroscopically hydrophilic surface Graph theory for automatic structural recognition in molecular dynamics simulations DFT-MD of the (110)-Co3O4 cobalt oxide semiconductor in contact with liquid water, preliminary chemical and physical insights into the electrochemical environment". Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLE008.

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Améliorer notre connaissance de la structure de l'eau dans l'environnement spécial offert par une interface est essentiel pour la compréhension de nombreux phénomènes naturels et applications technologiques. Pour révéler cette structure interfaciale de l'eau, des techniques capables de fournir des informations microscopiques, de manière sélective, pour cette couche interfaciale (BIL) sont nécessaires. Dans le présent travail de thèse, nous avons donc étudié les interfaces aqueuses au niveau moléculaire, en couplant la modélisation théorique à partir de simulations DFT-MD avec les spectroscopie

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Books on the topic "Semiconductor interface theory"

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Schmickler, Wolfgang. Interfacial Electrochemistry. Oxford University Press, 1996. http://dx.doi.org/10.1093/oso/9780195089325.001.0001.

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Electrochemistry is the study of a special class of interfaces--those between an ionic and an electronic conductor--that can conduct current. This makes it especially important to research and for industrial applications such as semiconductors. This book examines different topics within interfacial electrochemistry, including the theory of structures and processes at metal- solution and semiconductor-solution interfaces, the principles of classical and modern experimental methods, and some of the applications of electrochemistry. Students and nonspecialists in materials science, surface scienc

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Tiwari, Sandip. Semiconductor Physics. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.001.0001.

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A graduate-level text, Semiconductor physics: Principles, theory and nanoscale covers the central topics of the field, together with advanced topics related to the nanoscale and to quantum confinement, and integrates the understanding of important attributes that go beyond the conventional solid-state and statistical expositions. Topics include the behavior of electrons, phonons and photons; the energy and entropic foundations; bandstructures and their calculation; the behavior at surfaces and interfaces, including those of heterostructures and their heterojunctions; deep and shallow point per

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Tiwari, Sandip. Nanoscale Device Physics. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198759874.001.0001.

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Nanoscale devices are distinguishable from the larger microscale devices in their specific dependence on physical phenomena and effects that are central to their operation. The size change manifests itself through changes in importance of the phenomena and effects that become dominant and the changes in scale of underlying energetics and response. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising

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Book chapters on the topic "Semiconductor interface theory"

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Harrison, W. A., and J. Tersoff. "Tight-binding theory of heterojunction band lineups and interface dipoles." In Electronic Structure of Semiconductor Heterojunctions. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3073-5_24.

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Calandra, C., and F. Manghi. "Band Structure Theory of Semiconductor Surfaces and Interfaces." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72967-6_15.

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Vvedensky, Dimitri D. "Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status." In Semiconductor Interfaces at the Sub-Nanometer Scale. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-2034-0_5.

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Calandra, C. "Theory of the Electronic Structure of Semiconductor Surfaces and Interfaces." In The Physics of Submicron Semiconductor Devices. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-2382-0_6.

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Tiwari, Sandip. "Semiconductor interfaces and junctions." In Semiconductor Physics. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.003.0006.

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This chapter discusses understanding interfaces, how bulk state reasoning needs to evolve under the constraints of the surface and how these changes relate to interfaces. Interfaces and junctions connect semiconductors to the world and introduce perturbations of their own. Starting with a discussion of the SiO2-Si interface—an amorphous-crystalline interface—with its local evolution, more general conditions—of metals, insulators and semiconductors—with defect states, induced gap states and Fermi pinning are discussed. Next, neutrality level as a defining idea for the establishment of the electronic behavior of metal-semiconductor and semiconductor-semiconductor interfaces is examined. Crystalline continuity leading to heterostructures with conduction band and valence band discontinuities are developed and related to bulk bandstructure. This allows one to analytically describe and show the junction band diagrams of abrupt and graded junctions. Nitride systems often have a polarized junction, that is, have large polarization—spontaneous and often piezoelectric—whose origin is explored.

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Igor, Vurgaftman. "Basics of Envelope-Function Theory." In Bands and Photons in III-V Semiconductor Quantum Structures. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198767275.003.0008.

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The chapter shows how the bulk theory described in Part I can be generalized within the envelope-function framework to model the band structure of layered materials with quantum confinement of carriers such as quantum wells or superlattices. In practice, the approach amounts to substituting derivatives for wavevector components in suitably chosen Hamiltonians as well as augmenting them with interface terms. It also discusses the spin splitting of the states of the quantum structures that arises from structural and intrinsic asymmetries.

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Schmickler, Wolfgang. "The semiconductor-electrolyte interface." In Interfacial Electrochemistry. Oxford University Press, 1996. http://dx.doi.org/10.1093/oso/9780195089325.003.0012.

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Many naturally occurring substances, in particular the oxide films that form spontaneously on some metals, are semiconductors. Also, electrochemical reactions are used in the production of semiconductor chips, and recently semiconductors have been used in the construction of electrochemical photocells. So there are good technological reasons to study the interface between a semiconductor and an electrolyte. Our main interest, however, lies in more fundamental questions: How does the electronic structure of the electrode influence the properties of the electrochemical interface, and how does it affect electrochemical reactions? What new processes can occur at semiconductors that are not known from metals? We begin by recapitulating a few facts about semiconductors. Electronic states in a perfect semiconductor are delocalized just as in metals, and there are bands of allowed electronic energies. According to a well-known theorem, bands that are either completely filled or completely empty do not contribute to the conductivity. In semiconductors the current-carrying bands do not overlap as they do in metals; they are separated by the band gap, and the Fermi level lies right in this gap. The band below the Fermi level, which at T = 0 is completely filled, is known as the valence band; the band above, which is empty at T = 0, is the conduction band. In a pure or intrinsic semiconductor, the Fermi level is close to the center of the band gap. At room temperature a few electrons are excited from the valence into the conduction band, leaving behind electron vacancies or holes (denoted by h+). The electric current is carried by electrons in the conduction band and holes in the valence band. The concentrations nc of the conduction electrons and pv of the holes are determined from Fermi statistics.

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Tselev, A., A. V. Ievlev, R. Vasudevan, S. V. Kalinin, P. Maksymovych, and A. Morozovska. "Landau–Ginzburg–Devonshire Theory for Domain Wall Conduction and Observation of Microwave Conduction of Domain Walls." In Domain Walls. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198862499.003.0012.

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This chapter concerns DW electrical conduction. It first addresses the phenomenology of charged domain walls in the context of a Landau-Ginzburg-Devonshire (LGD) model for the ferroelectric semiconductor with analysis of the DW conductivity associated with accumulation of charge carriers near domain walls. It is revealed that there exists an interplay between the wall type — head-to-head or tail-to-tail — and conduction type of the semiconductor ferroelectric with a strong dependence of the domain wall conductivity on the wall orientation. The chapter then reviews observations of high-frequency — in the gigahertz frequency range — ac conductivity along the nominally uncharged 180-degree domain walls in a uniaxial Pb(Zr0.2Ti0.8)O3 epitaxial film. Measurements of the conduction at high frequencies are insensitive to presence of a Schottky barrier and the electrode-ferroelectric interface.

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Herwanto, Riko, and Nurfiana. "Design and Optimization of Networks-on-Chip." In Network-on-Chip [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97341.

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The modules on the IC unit now and then semiconductor science centers schematizing fluctuated elements of the PC framework and unit intended to be ordinary among the feeling of organization science. Another issue in NoC environmental factors is that the directing recipe. Regarding conveying system, for example alteration strategy, their unit contrasting sorts of adjustment strategies like circuit change, bundle alteration, and empty adjustment. The configurable interconnection parts give a data profitable, significantly progressed association from the processor and information perilous in place based knowledge official structures. What’s extra, the configurable Interconnect supports a multi-layer topography that guarantees the fundamental plan of assessment and low torpidity for each related Ip and it gives related advancements, as for voltage and repeat scaling. The Open Core Protocol can be a fitting and play interface for a middle having every master and slave interfaces. Organization interfacing: The achievement of the NoC style worldview relies significantly upon the normalization of the interfaces between science centers and furthermore the interconnection material. As demonstrated inside the figure beneath, for a center having each expert and slave interfaces, the OCP agreeable signs of the deliberate science block square measure packetized by a subsequent interface.

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Dominguez, Miguel, Pedro Rosales, Alfonso Torres, Jose A. Luna-Lopez, Francisco Flores, and Mario Moreno. "Metal-Semiconductor Interfaces in Thin-Film Transistors." In Different Types of Field-Effect Transistors - Theory and Applications. InTech, 2017. http://dx.doi.org/10.5772/intechopen.68327.

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Conference papers on the topic "Semiconductor interface theory"

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Kostylyova, Olga V., Oksana V. Shramkova, and Aleksey A. Bulgakov. "Surface waves on the interface of the periodic ferrite-dielectric structure bounded with the semiconductor media." In 2009 International Seminar/Workshop on Direct and Inverse Problems of Electromagnetic and Acoustic Wave Theory (DIPED). IEEE, 2009. http://dx.doi.org/10.1109/diped.2009.5307257.

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Choi, Woon Ih, Kwiseon Kim, and Sreekant Narumanchi. "Molecular Dynamics Modeling of Thermal Conductance at Atomically Clean and Disordered Silicon/Aluminum Interfaces." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65409.

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Thermal resistance between layers impedes effective heat dissipation in electronics packaging applications. Thermal conductance for clean and disordered interfaces between silicon (Si) and aluminum (Al) was computed using realistic Si/Al interfaces and classical molecular dynamics with the modified embedded atom method potential. These realistic interfaces, which include atomically clean as well as disordered interfaces, were obtained using density functional theory. At 300 K, the magnitude of interfacial conductance due to phonon-phonon scattering obtained from the classical molecular dynamic

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Akiyama, T. "Microscopic Theory of Oxygen Reaction Mechanisms at SiO2/Si(100) Interface." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994151.

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Sridharan, Aravindan, Nakita K. Noel, Barry P. Rand, and Stephane Kena-Cohen. "Diffusion and photon recycling in halide perovskite thin films: insights from experiment and theory." In Physical Chemistry of Semiconductor Materials and Interfaces IX, edited by Daniel Congreve, Christian Nielsen, and Andrew J. Musser. SPIE, 2020. http://dx.doi.org/10.1117/12.2567375.

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Bo Feng, F. Faruque, Peng Bao, An-Ting Chien, S. Kumar, and G. P. Peterson. "Double-sided tin nanowire arrays for advanced thermal interface materials." In 2013 IEEE/CPMT 29th Semiconductor Thermal Measurement & Management Symposium (SemiTherm 2013). IEEE, 2013. http://dx.doi.org/10.1109/semi-therm.2013.6526813.

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Schulz, Martin, Scott T. Allen, and Wilelm Pohl. "The crucial influence of thermal interface material in power electronic design." In 2013 IEEE/CPMT 29th Semiconductor Thermal Measurement & Management Symposium (SemiTherm 2013). IEEE, 2013. http://dx.doi.org/10.1109/semi-therm.2013.6526839.

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Jeong, Kwang Seob. "Self-doped Mid-IR Colloidal Quantum Dots and their Applications." In Physical Chemistry of Semiconductor Materials and Interfaces XX, edited by Daniel Congreve, Christian Nielsen, Andrew J. Musser, and Derya Baran. SPIE, 2021. http://dx.doi.org/10.1117/12.2593652.

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Goicochea, Javier V., Bruno Michel, and Cristina Amon. "Molecular dynamics simulations of oblique phonon scattering at semiconductor interfaces." In 2010 3rd International Conference on Thermal Issues in Emerging Technologies Theory and Applications (ThETA). IEEE, 2010. http://dx.doi.org/10.1109/theta.2010.5766386.

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Koch, Norbert. "Electronic properties of electronic material interfaces: their fundamentals and manipulation (Conference Presentation)." In Physical Chemistry of Semiconductor Materials and Interfaces XVII, edited by Hugo A. Bronstein and Felix Deschler. SPIE, 2018. http://dx.doi.org/10.1117/12.2321315.

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Specht, Judith, Eike Verdenhalven, Sverre Theuerholz, Andreas Knorr, and Marten Richter. "Theory of coupled hybrid inorganic/organic systems: Excitation transfer at semiconductor/molecule interfaces." In SPIE OPTO, edited by Markus Betz and Abdulhakem Y. Elezzabi. SPIE, 2016. http://dx.doi.org/10.1117/12.2207638.

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