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Journal articles on the topic 'Semiconductor interface theory'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

NESTOKLON, M. O. "HOLE STATES LOCALIZED AT TYPE II HETEROINTERFACE." International Journal of Nanoscience 02, no. 06 (2003): 411–17. http://dx.doi.org/10.1142/s0219581x03001504.

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A theory of Tamm-like hole states at type II heterointerface has been developed for zink-blende semiconductors. The consideration has been carried out in the microscopic tight-binding model with allowance made for the spin-orbit splitting of the valence band. It has been demonstrated that the tight-binding method describes Tamm-like hole states at type II semiconductor interface. Localization energy dependence on interface tight-binding parameters has been analyzed.

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2

Rahmani, M. D., P. Masri, and L. Dobrzynski. "Interface response theory of N-layered discrete semiconductor superlattices." Journal of Physics C: Solid State Physics 21, no. 27 (1988): 4761–81. http://dx.doi.org/10.1088/0022-3719/21/27/007.

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3

Odenweller, T. "On the Theory of the Semiconductor/Electrolyte‐Interface (I)." Journal of The Electrochemical Society 137, no. 8 (1990): 2457–61. http://dx.doi.org/10.1149/1.2086960.

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4

Kovenskiy, I. M., S. V. Malysh, and V. V. Povetkin. "STRUCTURAL PECULIARITIES OF THE PROCESS OF ELECTROLYTIC CHROMIUM PLATING IN RESTORATION OF WORN PARTS." Oil and Gas Studies, no. 1 (March 1, 2018): 92–97. http://dx.doi.org/10.31660/0445-0108-2018-1-92-97.

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Processes occurring at the metal-electrolyte interface in chrome plating of parts with an inhomogeneous structure have been considered from the standpoint of the band theory of semiconductors. Similarity of processes in the systems metal - semiconductor and metal - electrolyte has been established. A technique for estimating the quality of surface preparation of worn parts for electrolytic chromium plating based on the results of measuring the spread of thermal EMF values has been validated.

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5

Nogami, Gyoichi. "Theory of Capacitance‐Voltage Characteristics of Semiconductor Electrodes with Interface States." Journal of The Electrochemical Society 133, no. 3 (1986): 525–31. http://dx.doi.org/10.1149/1.2108613.

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6

Kovalenko, Sergii, and Veniamin Soloviev. "Kinetics of the Elementary Act of Electrochemical Reactions at the Semiconductor–Electrolyte Solution Interface." Zeitschrift für Naturforschung A 69, no. 12 (2014): 654–58. http://dx.doi.org/10.5560/zna.2014-0063.

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AbstractIn the framework of the quantum-mechanical theory of elementary act of non-adiabatic electrochemical reactions, it is carried out the calculation of the discharge current of ions at the semiconductor-electrolyte solution interface using the model of isotropic spherically symmetric band. It is shown that our results generalize the well-known formulae for the current density obtained by Dogonadze, Kuznetsov, and Chizmadzhev [R. R. Dogonadze, A. M. Kuznetsov, and Yu. A. Chizmadzhev, The kinetics of some heterogeneous reactions at semiconductor-electrolyte interface, Zhur. Fiz. Khim. 38, 1

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7

Boroda, Yuri G., and Gregory A. Voth. "A theory for adiabatic electron transfer processes across the semiconductor/electrolyte interface." Journal of Chemical Physics 104, no. 16 (1996): 6168–83. http://dx.doi.org/10.1063/1.471274.

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8

Abgaryan, Karine, Ilya Mutigullin, and Dmitriy Bazhanov. "Multiscale Computational Model of Nitride Semiconductor Nanostructures." Advanced Materials Research 560-561 (August 2012): 1133–37. http://dx.doi.org/10.4028/www.scientific.net/amr.560-561.1133.

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Theoretical multiscale model of nitride semiconductor nanostructure is proposed. The model combines various computational methods such as density functional theory, molecular dynamics and kinetic Monte Carlo. As a first step of implementation of proposed approach ab initio calculations of structural and electronic properties of two different structures InN/Si and AlN/AlGaN/GaN heterostructures were carried out. In particular, the influence of oxygen on InN/Si adhesion energy was studied. AlN, GaN, AlxGa1-xN (x=0.33) spontaneous and piezoelectric polarizations as well as sheet carrier concentra

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9

CYWIŃSKI, ŁUKASZ, HANAN DERY, PARIN DALAL, and L. J. SHAM. "ELECTRICAL EXPRESSION OF SPIN ACCUMULATION IN FERROMAGNET/SEMICONDUCTOR STRUCTURES." Modern Physics Letters B 21, no. 23 (2007): 1509–29. http://dx.doi.org/10.1142/s021798490701395x.

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We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport thr

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10

Tidriri, Moulay D. "An alternative model to boundary and interface layer correctors in semiconductor theory: derivation and existence theory." Comptes Rendus de l'Académie des Sciences - Series I - Mathematics 332, no. 3 (2001): 271–76. http://dx.doi.org/10.1016/s0764-4442(00)01823-1.

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11

Je, Minyeong, Eun Seob Sim, Jungwook Woo, Heechae Choi, and Yong-Chae Chung. "Manipulatable Interface Electric Field and Charge Transfer in a 2D/2D Heterojunction Photocatalyst via Oxygen Intercalation." Catalysts 10, no. 5 (2020): 469. http://dx.doi.org/10.3390/catal10050469.

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Charge separation is the most important factor in determining the photocatalytic activity of a 2D/2D heterostructure. Despite the exclusive advantages of 2D/2D heterostructure semiconductor systems such as large surface/volume ratios, their use in photocatalysis is limited due to the low efficiency of charge separation and high recombination rates. As a remedy for the weak interlayer binding and low carrier transport efficiency in 2D/2D heterojunctioned semiconductors, we suggested an impurity intercalation method for the 2D/2D interface. PtS2/C3N4, as a prototype heterojunction material, was

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12

Wei, Ming-Sheng, Zhou Cui, Xin Ruan, et al. "Interface Characterization of Current-Perpendicular-to-Plane Spin Valves Based on Spin Gapless Semiconductor Mn2CoAl." Applied Sciences 8, no. 8 (2018): 1348. http://dx.doi.org/10.3390/app8081348.

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Employing the first-principles calculations within density functional theory (DFT) combined with the nonequilibrium Green’s function, we investigated the interfacial electronic, magnetic, and spin transport properties of Mn2CoAl/Ag/Mn2CoAl current-perpendicular-to-plane spin valves (CPP-SV). Due to the interface rehybridization, the magnetic moment of the interface atom gets enhanced. Further analysis on electronic structures reveals that owing to the interface states, the interface spin polarization is decreased. The largest interface spin polarization (ISP) of 78% belongs to the MnCoT-termin

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13

Ivchenko, E. L., and M. O. Nestoklon. "Optical transitions on a type II semiconductor interface in the empirical tight-binding theory." Journal of Experimental and Theoretical Physics 94, no. 3 (2002): 644–53. http://dx.doi.org/10.1134/1.1469162.

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14

Tavkhelidze, Avtandil, Larissa Jangidze, Zaza Taliashvili, and Nima E. Gorji. "G-Doping-Based Metal-Semiconductor Junction." Coatings 11, no. 8 (2021): 945. http://dx.doi.org/10.3390/coatings11080945.

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Geometry-induced doping (G-doping) has been realized in semiconductors nanograting layers. G-doping-based p-p(v) junction has been fabricated and demonstrated with extremely low forward voltage and reduced reverse current. The formation mechanism of p-p(v) junction has been proposed. To obtain G-doping, the surfaces of p-type and p+-type silicon substrates were patterned with nanograting indents of depth d = 30 nm. The Ti/Ag contacts were deposited on top of G-doped layers to form metal-semiconductor junctions. The two-probe method has been used to record the I–V characteristics and the four-p

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15

Kaufmann, Ivan Rodrigo, Onur Zerey, Thorsten Meyers, Julia Reker, Fábio Vidor, and Ulrich Hilleringmann. "A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application." Nanomaterials 11, no. 5 (2021): 1188. http://dx.doi.org/10.3390/nano11051188.

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Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as

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16

Tuttle, B. R., X. Shen, and S. T. Pantelides. "Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices." Applied Physics Letters 102, no. 12 (2013): 123505. http://dx.doi.org/10.1063/1.4798536.

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17

Abrantes, L. M., R. Peat, L. M. Peter, and A. Hamnett. "Electroreflectance at the semiconductor/electrolyte interface. A comparison of theory and experiment for n-GaAs." Berichte der Bunsengesellschaft für physikalische Chemie 91, no. 4 (1987): 369–74. http://dx.doi.org/10.1002/bbpc.19870910426.

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18

Liu, Jia, Ji-Chang Ren, Tao Shen, et al. "Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials." Research 2020 (November 15, 2020): 1–8. http://dx.doi.org/10.34133/2020/6727524.

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Physical and electronic asymmetry plays a crucial role in rectifiers and other devices with a directionally variant current-voltage (I-V) ratio. Several strategies for practically creating asymmetry in nanoscale components have been demonstrated, but complex fabrication procedures, high cost, and incomplete mechanistic understanding have significantly limited large-scale applications of these components. In this work, we present density functional theory calculations which demonstrate asymmetric electronic properties in a metal-semiconductor-metal (MSM) interface composed of stacked van der Wa

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19

Takaki, Hirokazu, Nobuhiko Kobayashi, and Kenji Hirose. "Efficient Ab-Initio Electron Transport Calculations for Heterostructures by the Nonequilibrium Green’s Function Method." Journal of Nanomaterials 2014 (2014): 1–5. http://dx.doi.org/10.1155/2014/172169.

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We present an efficient computation technique for ab-initio electron transport calculations based on density functional theory and the nonequilibrium Green’s function formalism for application to heterostructures with two-dimensional (2D) interfaces. The computational load for constructing the Green’s functions, which depends not only on the energy but also on the 2D Bloch wave vector along the interfaces and is thus catastrophically heavy, is circumvented by parallel computational techniques with the message passing interface, which divides the calculations of the Green’s functions with respe

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20

Hilty, Floyd W., Andrew K. Kuhlman, Fabian Pauly, and Alexey T. Zayak. "Raman Scattering from a Molecule–Semiconductor Interface Tuned by an Electric Field: Density Functional Theory Approach." Journal of Physical Chemistry C 119, no. 40 (2015): 23113–18. http://dx.doi.org/10.1021/acs.jpcc.5b08089.

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21

Maggio, Emanuele, and Alessandro Troisi. "Theory of the Charge Recombination Reaction at the Semiconductor–Adsorbate Interface in the Presence of Defects." Journal of Physical Chemistry C 117, no. 46 (2013): 24196–205. http://dx.doi.org/10.1021/jp4080515.

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22

Pipinys, P., and V. Lapeika. "Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes." Advances in Condensed Matter Physics 2010 (2010): 1–7. http://dx.doi.org/10.1155/2010/526929.

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Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 . and for

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23

Houssa, Michel, Ruishen Meng, Valery Afanas’ev, and André Stesmans. "First-Principles Study of the Contact Resistance at 2D Metal/2D Semiconductor Heterojunctions." Applied Sciences 10, no. 8 (2020): 2731. http://dx.doi.org/10.3390/app10082731.

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The high contact resistance at metal/two-dimensional (2D) semiconductor junctions is a major issue for the integration of 2D materials in nanoelectronic devices. We review here recent theoretical results on the contact resistance at lateral heterojunctions between graphene or 1T-MoS2 with 2H-MoS2 monolayers. The transport properties at these junctions are computed using density functional theory and the non-equilibrium Green’s function method. The contact resistance is found to strongly depend on the edge contact symmetry/termination at graphene/2H-MoS2 contacts, varying between about 2 × 102

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24

Díaz-Fernández, Álvaro, Natalia del Valle, and Francisco Domínguez-Adame. "Robust midgap states in band-inverted junctions under electric and magnetic fields." Beilstein Journal of Nanotechnology 9 (May 14, 2018): 1405–13. http://dx.doi.org/10.3762/bjnano.9.133.

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Several IV–VI semiconductor compounds made of heavy atoms, such as Pb1 −x Sn x Te, may undergo band-inversion at the L point of the Brillouin zone upon variation of their chemical composition. This inversion gives rise to topologically distinct phases, characterized by a change in a topological invariant. In the framework of the k·p theory, band-inversion can be viewed as a change of sign of the fundamental gap. A two-band model within the envelope-function approximation predicts the appearance of midgap interface states with Dirac cone dispersions in band-inverted junctions, namely, when the

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25

MAITI, T. K., and C. K. MAITI. "NONEQUILIBRIUM GREEN'S FUNCTION BASED QUANTUM TRANSPORT SIMULATION FOR STRAINED-ENGINEERED NANOSCALE TRANSISTORS IN THE PRESENCE OF ELECTRON–PHONON INTERACTIONS." International Journal of Nanoscience 09, no. 04 (2010): 327–33. http://dx.doi.org/10.1142/s0219581x10006909.

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Based on ab initio formulation and using nonequilibrium Green's function (NEGF) formalism, electronic transport in the presence of electron–phonon interactions in strained-engineered nanoscale transistors is presented. Ab initio methods are applied to treat the metal/semiconductor interface properly. NEGF formalism is applied as quantum transport and phonon scattering are the dominant factors in devices under realistic operating voltages. Local self-energy functions for electron–phonon scattering have been obtained using deformation potential theory. This approach is applied to the study of el

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26

Liu, Xueqiang, Haobo Kang, and Ran Yang. "Carrier concentration increase in OFETs with interface barrier and Fermi level difference." European Physical Journal Applied Physics 90, no. 1 (2020): 10201. http://dx.doi.org/10.1051/epjap/2020200057.

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It was found that interface barrier is beneficial to form accumulation heterojunction in organic semiconductor. A new theoretical model has been established with combined effect of interface barrier and EF level difference between p-type and n-type materials. The organic pn-heterojunction has been put forward in OFETs for further research, 2 nm perylene diimide (PDI) and its derivatives (PDI-1)/(PDI-2) are used as discontinuous films to modify pentacene OFETs. The accumulative effect will be further enhanced under the joint effect of interface barrier and greater EF level difference. With the

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27

Park, Woojin, Yusin Pak, Hye Yeon Jang, et al. "Improvement of the Bias Stress Stability in 2D MoS2 and WS2 Transistors with a TiO2 Interfacial Layer." Nanomaterials 9, no. 8 (2019): 1155. http://dx.doi.org/10.3390/nano9081155.

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The fermi-level pinning phenomenon, which occurs at the metal–semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO2) interfacial layer inserted between the 2D TMDs (MoS2 or WS2) and metal electrodes. Compared to the control MoS2, the device without the TiO2 layer, the TiO2 interfacial layer deposited on 2D TMDs could lead to more

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Zhang, Sheng Fang, Jian Xiu Su, Jia Xi Du, and Ren Ke Kang. "Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior." Materials Science Forum 704-705 (December 2011): 313–17. http://dx.doi.org/10.4028/www.scientific.net/msf.704-705.313.

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Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. In this paper, the distinguish method of lubricating behavior in wafer CMP had been analyzed in theory firstly. Then, the tests of wafer CMP with silicon wafer and deposited copper wafer at different polishing pressure had been done. By the test results, the Stribeck curves obtained showed obvious smooth. But in normal wafer CMP conditions, the friction coefficient of polishing area was above 0.1. By analyzing the experimental results, it was concluded that t

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29

Mehmood, Umer, Ibnelwaleed A. Hussein, Khalil Harrabi, and Shakeel Ahmed. "Density Functional Theory Study on the Electronic Structures of Oxadiazole Based Dyes as Photosensitizer for Dye Sensitized Solar Cells." Advances in Materials Science and Engineering 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/286730.

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The molecular structures and UV-visible absorption spectra of complex photosensitizers comprising oxadiazole isomers as theπ-bridges were analyzed by density functional theory (DFT) and time-dependent DFT. The ground state and excited state oxidation potentials, HOMOs and LUMOs energy levels, and electron injection from the dyes to semiconductor TiO2have been computed in vacuum here. The results show that all of the dyes may potentially be good photosensitizers in DSSC. To justify the simulation basis, N3 dye was also simulated under the similar conditions. Simulated absorption spectrum, HOMO,

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30

RAMÍREZ-PORRAS, A., A. MANY, Y. GOLDSTEIN, and S. Z. WEISZ. "SPACE-CHARGE LAYERS AND SURFACE STATES IN p-TYPE CRYSTALLINE SILICON." Surface Review and Letters 09, no. 05n06 (2002): 1773–77. http://dx.doi.org/10.1142/s0218625x02004396.

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Pulse measurements on the silicon/electrolyte interface have been used to study space-charge layers and surface states on the (100) faces of p-type silicon. The techniques used enable both the creation and study of space-charge layers at the semiconductor surface, ranging from large-depletion to strong-accumulation conditions. They also permit a straightforward separation of the different components of the induced charge at the silicon/electrolyte interface, so as to yield the variation of both the free-electron density in the space-charge layer and the density of occupied surface states with

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31

Thierry-Jebali, Nicolas, Olivier Ménard, Christiane Dubois, et al. "Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN." Materials Science Forum 711 (January 2012): 208–12. http://dx.doi.org/10.4028/www.scientific.net/msf.711.208.

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This work reports of investigation on the origin of the ohmic behavior for Ti/Al basedcontacts on n-GaN. Indeed, last publications tend to prove that the ''nitrogen vacancy'' theory is notconfirmed by the experimental ground available. To find new answers, we first made electrical charac-terizations on some Al/Ti/n+-GaN contacts with different annealing conditions. Then, we performedSIMS depth profiles of annealed TiN/Ti/n+-GaN samples. Results developed in this paper tend todemonstrate that the ohmic behavior of Ti/Al based contact is mainly due to an increase of the dop-ing concentration. Mo

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32

Durmuş, Perihan, and Şemsettin Altindal. "Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer." International Journal of Modern Physics B 31, no. 27 (2017): 1750197. http://dx.doi.org/10.1142/s0217979217501971.

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In this study, electrical parameters of the Al/Bi4Ti3O[Formula: see text]/p-Si metal-ferroelectric-semiconductor (MFS) structure and their temperature dependence were investigated using current–voltage (I–V) data measured between 120 K and 300 K. Semi-logarithmic I–V plots of the structure revealed that fabricated structure presents two-diode behavior that leads to two sets of ideality factor, reverse saturation current and zero-bias barrier height (BH) values. Obtained results of these parameters suggest that current conduction mechanism (CCM) deviates strongly from thermionic emission theory

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33

Lee, Taekyung, Haedo Jeong, Sangjik Lee, Hanchul Cho, Doyeon Kim, and Hyoungjae Kim. "Material Removal Model for Lapping Process Based on Spiral Groove Density." Applied Sciences 11, no. 9 (2021): 3950. http://dx.doi.org/10.3390/app11093950.

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The increasing demand for single-crystal wafers combined with the increase in diameter of semiconductor wafers has warranted further improvements in thickness variation and material removal rate during lapping to ensure price competitiveness of wafers; consequently, the lapping process has gained the attention of researchers. However, there is insufficient research on the effect of platen grooves on the lapping process. In this study, the parameters to describe grooves were defined in order to understand their influence on the lapping process, and a material removal model was suggested based o

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34

Рожков, А. В. "О токовой зависимости эффективности инжекции и относительном вкладе скорости эмиссии и внутренних оптических потерь в насыщение ватт-амперной характеристики мощных импульсных лазеров (λ=1.06 мкм)". Физика и техника полупроводников 54, № 8 (2020): 721. http://dx.doi.org/10.21883/ftp.2020.08.49642.9389.

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The results of numerical simulation of the current dependence of the injection efficiency in the active area of the laser based on separate confinement heterostructures are presented. The feature of the transfer of charge carriers through isotype N-n heterotransitions on the interface boundary of waveguide and active areas is shown. Using the classic dependencies of the Drude-Lorentz theory, the cross-section of electrons and holes for the GaAs waveguide was evaluated. The resulting values of σe= 1.05∙10-18 cm2 and σp= 1.55∙10-19 cm2 and current dependencies of the injection efficiency allowed

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35

Klimeck, Gerhard, Dan Blanks, Roger Lake, et al. "Writing Research Software in a Large Group for the NEMO Project." VLSI Design 8, no. 1-4 (1998): 79–86. http://dx.doi.org/10.1155/1998/35374.

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The nanoelectronic modeling (NEMO) program is the result of a three-year development effort involving four universities and the former Corporate Research and Development Laboratory of Texas Instruments, now Applied Research Laboratory, Raytheon TI Systems, to create a comprehensive quantum device modeling tool for layered semiconductor structures. Based on the non-equilibrium Green function formalism, it includes the effects of quantum charging, bandstructure and incoherent scattering from alloy disorder, interface roughness, acoustic phonons, and polar optical phonons. NEMO addresses the dive

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36

SAVIR, E., A. MANY, Y. GOLDSTEIN, S. Z. WEISZ, and J. AVALOS. "SPACE-CHARGE LAYERS AND SURFACE STATES AT THE SILICON/ELECTROLYTE INTERFACE." Surface Review and Letters 02, no. 06 (1995): 765–72. http://dx.doi.org/10.1142/s0218625x95000698.

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Pulse measurements on the silicon/electrolyte interface have been used to study space-charge layers and surface states on the (100) and (111) faces of silicon. The techniques used enable both the creation and study of space-charge layers at the semiconductor surface, ranging from large-depletion to strong-accumulation conditions. What is more important, they permit a straightforward separation of the different components of the induced charge at the silicon/electrolyte interface, so as to yield the variation of both the free-electron density in the space-charge layer and the density of occupie

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37

Alvarez-Venicio, Violeta, Rafael O. Arcos-Ramos, José Alfonso Hernández-Rojas, et al. "Preparation and Characterization of a Novel Organic Semiconductor Indacenedithiophene Derivative and the Corresponding Langmuir-Blodgett Thin Films." Journal of Nanoscience and Nanotechnology 19, no. 11 (2019): 7244–50. http://dx.doi.org/10.1166/jnn.2019.17129.

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The synthesis of a novel indacenedithiophene derivative (IDT-DPA) is described, which exhibits semiconducting behavior. Its properties were measured by means of UV-visible and fluorescence spectroscopies using toluene as solvent. An extinction molar coefficient of 2.05×104 M−1 cm−1 and a Stokes shift of 50 nm were obtained. A theoretical study was performed using the density functional theory, from which HOMO–LUMO band gap of 1.711 eV was calculated. IDT-DPA was deposited on the water-air interface to form Langmuir monolayers. π-A curves and hysteresis were measured showing reversibility behav

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38

Lacerda, Luis Henrique da Silveira, and Sergio Ricardo de Lazaro. "Isomorphic substitution and intermediary energy levels: A new application of DFT modelling and semiconductor theory to describe p-n type junctions interface in heterostructures." physica status solidi (b) 254, no. 10 (2017): 1700119. http://dx.doi.org/10.1002/pssb.201700119.

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Ifland, Benedikt, Patrick Peretzki, Birte Kressdorf, et al. "Current–voltage characteristics of manganite–titanite perovskite junctions." Beilstein Journal of Nanotechnology 6 (July 7, 2015): 1467–84. http://dx.doi.org/10.3762/bjnano.6.152.

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After a general introduction into the Shockley theory of current voltage (J–V) characteristics of inorganic and organic semiconductor junctions of different bandwidth, we apply the Shockley theory-based, one diode model to a new type of perovskite junctions with polaronic charge carriers. In particular, we studied manganite–titanate p–n heterojunctions made of n-doped SrTi1− y Nb y O3, y = 0.002 and p-doped Pr1− x Ca x MnO3, x = 0.34 having a strongly correlated electron system. The diffusion length of the polaron carriers was analyzed by electron beam-induced current (EBIC) in a thin cross pl

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Qu, Zhan, Yali Su, Li Sun, Feng Liang, and Guohe Zhang. "Study of the Structure, Electronic and Optical Properties of BiOI/Rutile-TiO2 Heterojunction by the First-Principle Calculation." Materials 13, no. 2 (2020): 323. http://dx.doi.org/10.3390/ma13020323.

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Using the first-principle calculation that is based on the density functional theory (DFT), our group gains some insights of the structural, electronic and optical properties of two brand new types of BiOI/TiO2 heterojunctions: 1I-terminated BiOI {001} surface/TiO2 (1I-BiOI/TiO2) and BiO-terminated BiOI {001} surface/TiO2 (BiO-BiOI/TiO2). The calculation illustrates that BiOI/TiO2 heterojunction has excellent mechanical stability, and it shows that there is a great possibility for the BiOI/TiO2 heterojunction to be used in visible-light range, hence the photocatalytic ability can be enhanced d

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MAOUDJ, M., D. BOUHAFS, N. BOUROUBA, et al. "INFLUENCE OF THE ALKALI SURFACE TREATMENTS ON THE INTERFACE-STATES DENSITY AND MINORITY CARRIER LIFETIME IN Cz–SILICON WAFER." Surface Review and Letters 25, no. 07 (2018): 1950007. http://dx.doi.org/10.1142/s0218625x19500070.

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The chemical etching of the surface of silicon wafers is a critical step in the manufacturing process of all semiconductor devices. In this contribution, we investigate the effect of alkaline etching on minority carrier lifetime and interface-states density ([Formula: see text] of silicon wafers intended to be used as solar cell substrates. After alkali treatment, the surface morphology was analyzed using scanning electron microscopy (SEM) and UV-visible-NIR optical spectroscopy. Besides and as electrical characterizations, the minority charge carrier lifetime ([Formula: see text] was measured

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ERTURK, K., M. C. HACIISMAILOGLU, Y. BEKTORE, and M. AHMETOGLU. "TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES." International Journal of Modern Physics B 22, no. 14 (2008): 2309–19. http://dx.doi.org/10.1142/s0217979208039496.

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The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than

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Ren, Xue-Feng, Jun Zhang, and Guo-Jun Kang. "Theoretical Studies of Electronic Structure and Photophysical Properties of a Series of Indoline Dyes with Triphenylamine Ligand." Journal of Nanomaterials 2015 (2015): 1–9. http://dx.doi.org/10.1155/2015/605728.

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To design efficient organic sensitizer, a series of D-π-A indoline dyes with different donor parts have been investigated by density functional theory (DFT) and time-dependent DFT (TD-DFT) approach. The molecular geometries, frontier molecular orbitals, and absorption spectra of these dyes have been systematically investigated to provide comprehensive understanding of the structure-property relationships. Compared with D149, our designed dyes have proper HOMO and LUMO energy level, narrowed HOMO-LUMO energy gap, and broadened absorption band by introducing the N(CH3)2and N(phenyl)2groups at th

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Kobayashi, Atsushi, Eiichirou Muramatsu, Masaki Yoshida, and Masako Kato. "Two Excited State Collaboration of Heteroleptic Ir(III)-Coumarin Complexes for H2 Evolution Dye-Sensitized Photocatalysts." Energies 14, no. 9 (2021): 2425. http://dx.doi.org/10.3390/en14092425.

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Interfacial electron injection from a photoexcited surface-immobilized dye to a semiconductor substrate is a key reaction for dye-sensitized photocatalysts. We previously reported that the molecular orientation of heteroleptic Ir(III) photosensitizer on the TiO2 nanoparticle surface was important for efficient interfacial electron injection. In this work, to overcome the weak light absorption ability of heteroleptic Ir(III) photosensitizer and to improve the photoinduced charge-separation efficiency at the dye–semiconductor interface, we synthesized two heteroleptic Ir(III) complexes with diff

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Tkachenko, Vitaly A., Olga A. Tkachenko, Dmitry G. Baksheev, and Oleg P. Sushkov. "Effect of surface charge self-organization on gate-induced 2D electron and hole systems." Modern Electronic Materials 6, no. 3 (2020): 101–6. http://dx.doi.org/10.3897/j.moem.6.3.63361.

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A simple model has been suggested for describing self-organization of localized charges and quantum scattering in undoped GaAs/AlGaAs structures with 2D electron or hole gas created by applying respective gate bias. It has been assumed that these metal / dielectric / undoped semiconductor structures exhibit predominant carrier scattering at localized surface charges which can be located at any point of the plane imitating the GaAs / dielectric interface. The suggested model considers all these surface charges and respective image charges in metallic gate as a closed thermostated system. Electr

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Abay, Bahattin. "Laterally Inhomogeneous Barrier Height Analysis for Thermally Annealed CuNiTi/p-InP Contacts." Materials Science Forum 890 (March 2017): 127–30. http://dx.doi.org/10.4028/www.scientific.net/msf.890.127.

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The fabrication of thermally stable Schottky contacts with high barrier height (BH) to InP is one of the main challenges for InP-based device technology. CuNiTi/p-InP Schottky barrier diodes (SBDs) (25 dots) on p-InP substrate were fabricated by conventional vacuum deposition. Characteristic parameters such as BH and ideality factor (n) of as-deposited and annealed CuNiTi/p-InP diodes have been computed by thermionic emission (TE) theory from the forward-bias current-voltage (I-V) data, at room temperature and in dark. The value of BH and n varies from 0.452 to 0.631 eV and 1.172 to 2.815, res

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Tung, R. T. "Electron transport at metal-semiconductor interfaces: General theory." Physical Review B 45, no. 23 (1992): 13509–23. http://dx.doi.org/10.1103/physrevb.45.13509.

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Shah, Priyal, and Milind Bhagavat. "Optimal Lid Design Parameters for Reducing Warpage of Flip-chip Package." International Symposium on Microelectronics 2019, no. 1 (2019): 000110–14. http://dx.doi.org/10.4071/2380-4505-2019.1.000110.

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Abstract Flip-chip packages are usually integrated with a stiffener ring (SR) or lid to reduce the warpage which usually consumes considerable substrate space and hence, reduce the effective area available for placement of dies and passive components. With chip module size growing in modern semiconductor devices (e.g., to enable heterogeneous integration of different functional dies), there is a need to reduce the substrate area occupied by the lid while also reducing the package warpage to an allowable value. This requires an accurate understanding of how different parameters of the lid affec

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Brinkman, W. F. "Electron Microscopy and the Electronics Industry: Partners in Development." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (1990): 12–13. http://dx.doi.org/10.1017/s0424820100178811.

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Since the invention of the transistor and the birth of the solid-state electronics industry, electron microscopy has been an integral part of the boom in the science and technology of semiconductors. The relationship has been symbiotic: the technique of microscopy has probably gained almost as much as the electronics industry from innovations. Historically, semiconductor research has always come down to a question of the growth of perfect materials with perfect interfaces, and microscopic analysis below the optical level has been essential to improvements. When applications for the semiconduct

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Devi, V. Lakshmi, I. Jyothi, and V. Rajagopal Reddy. "Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP." Canadian Journal of Physics 90, no. 1 (2012): 73–81. http://dx.doi.org/10.1139/p11-142.

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In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE

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