Relevant bibliographies by topics / Semiconductor lasers Molecular beam epitaxy

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Semiconductor lasers Molecular beam epitaxy'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Semiconductor lasers Molecular beam epitaxy.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Semiconductor lasers Molecular beam epitaxy"

1

Ploog, Klaus H. "Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision." Физика и техника полупроводников 52, no. 5 (2018): 513. http://dx.doi.org/10.21883/ftp.2018.05.45857.46.

Full text
Abstract:
AbstractIn this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.
APA, Harvard, Vancouver, ISO, and other styles
2

Chobola, Zdeněk, Miroslav Luňák, Jiří Vaněk, Eduard Hulicius, and Ivo Kusák. "Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy." Journal of Electrical Engineering 66, no. 4 (July 1, 2015): 226–30. http://dx.doi.org/10.2478/jee-2015-0036.

Full text
Abstract:
Abstract The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.
APA, Harvard, Vancouver, ISO, and other styles
3

Bardashevska, S. D., I. M. Budzulyak, S. I. Budzulyak, B. I. Rachiy, and A. M. Boychuk. "Semiconductor Quantum Dots as Materials for Lasers Based on Them." Фізика і хімія твердого тіла 19, no. 2 (June 29, 2018): 113–29. http://dx.doi.org/10.15330/pcss.19.2.113-129.

Full text
Abstract:
Quantum dots (QDs) today belong to the central research objects of many scientific groups. The study of theproperties of structures of small size is important both for the further development of electronics, and for theimprovement of existing semiconductor devices. At present, there are many methods of obtaining QDsobtainingunder the laboratory conditions: the method of ultrasonic grinding, molecular beam epitaxy, pulsed laser ablation,as well as using such methods of chemical synthesis as organometall synthesis, synthesis in reverse micelles,electrothermal synthesis, sol-gel synthesis, synthesis using thiol stabilizers, synthesis in a non-aqueous medium.Nowadays, the most promising methods are based on the use of the phenomenon of self-organization. These aremolecular-beam epitaxy and colloidal chemistry methods, and the latter are used for synthesisof nanosizedcrystals.The band gap width and the energy of luminescence peak are determined by the size of the particles.
APA, Harvard, Vancouver, ISO, and other styles
4

Tsang, W. T. "Summary Abstract: Molecular beam epitaxy for semiconductor lasers operating at 0.61–20 μm." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 2 (March 1985): 513. http://dx.doi.org/10.1116/1.583307.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Kapon, E., S. Simhony, J. P. Harbison, L. T. Florez, and P. Worland. "Threshold current reduction in patterned quantum well semiconductor lasers grown by molecular beam epitaxy." Applied Physics Letters 56, no. 19 (May 7, 1990): 1825–27. http://dx.doi.org/10.1063/1.103196.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Accard, A., F. Brillouet, E. Duda, B. Fernier, G. Gelly, L. Goldstein, D. Leclerc, and D. Lesterlin. "High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy." Journal de Physique III 2, no. 9 (September 1992): 1727–38. http://dx.doi.org/10.1051/jp3:1992208.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Batstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.

Full text
Abstract:
The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).
APA, Harvard, Vancouver, ISO, and other styles
8

Hasan, Syed M. N., Weicheng You, Md Saiful Islam Sumon, and Shamsul Arafin. "Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands." Photonics 8, no. 7 (July 8, 2021): 267. http://dx.doi.org/10.3390/photonics8070267.

Full text
Abstract:
The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and -C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitride materials and their alloys, in particular AlGaN, are the material of choice for the development of this ultrashort-wavelength laser technology. Despite significant progress in AlGaN-based light-emitting diodes (LEDs), the technological advancement and innovation in diode lasers at these spectral bands is lagging due to several technical challenges. Here, the authors review the progress of AlGaN electrically-pumped lasers with respect to very recent achievements made by the scientific community. The devices based on both thin films and nanowires demonstrated to date will be discussed in this review. The state-of-the-art growth technologies, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates used for the laser demonstrations will be highlighted. We will also outline technical challenges associated with the laser development, which must be overcome in order to achieve a critical technological breakthrough and fully realize the potential of these lasers.
APA, Harvard, Vancouver, ISO, and other styles
9

Kapon, E., J. P. Harbison, C. P. Yun, and N. G. Stoffel. "Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy." Applied Physics Letters 52, no. 8 (February 22, 1988): 607–9. http://dx.doi.org/10.1063/1.99379.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Johnson, F. G. "Solid source molecular beam epitaxy of low threshold 1.55 μm wavelength GaInAs/GaInAsP/InP semiconductor lasers." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 4 (July 1996): 2753. http://dx.doi.org/10.1116/1.589014.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Semiconductor lasers Molecular beam epitaxy"

1

Lee, Ka Yuk. "Optical properties of GaSb/AlSb/InAs-based quasi-type I quantum structures /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202004%20LEE.

Full text
Abstract:
Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.
Includes bibliographical references (leaves 44-48). Also available in electronic version. Access restricted to campus users.
APA, Harvard, Vancouver, ISO, and other styles
2

Wang, Jun. "GSMBE growth on V-groove patterned substrates for InP-based quantum wires /." *McMaster only, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

LaPierre, Ray R. "Atomic hydrogen-assisted epitaxy for the reduction of composition modulation in InGaAsP /." *McMaster only, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Liang, Yu-Han. "Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures." Research Showcase @ CMU, 2017. http://repository.cmu.edu/dissertations/1008.

Full text
Abstract:
Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.
APA, Harvard, Vancouver, ISO, and other styles
5

Gupta, Archana. "Characterization and modeling of strained layers grown on V-grooved substrates." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ30143.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Choi, Joon Koo. "Laser Spectroscopy of Eu Centres in MBE Grown CaF₂:Eu-CdF₂ Superlattices and CaF₂:Eu Thin Films." Thesis, University of Canterbury. Physics and Astronomy, 2009. http://hdl.handle.net/10092/3025.

Full text
Abstract:
Molecular beam epitaxy (MBE) grown CaF₂-CdF₂ superlattices (SLs) and CaF₂ thin films doped with Eu ions were investigated by laser spectroscopic techniques. Eu ions were selectively doped into CaF₂ layers and were used as an optical probe to the SLs and thin films. Physical properties of the SLs and thin films were inferred from optical transitions of divalent and trivalent Eu centres. The 4ƒ⁶5d → 4ƒ⁷ transition of Eu²⁺ has shown strain dependent peak shifts of the zero phonon line. These shifts were thought to be a result of deformation in the crystal structure primarily due to the lattice mismatch with the Si substrate. Based on the amount of shifts, the strains associated with the MBE samples were calculated. Photoluminescence (PL) bleaching and its recovery of the same transition of Eu²⁺ in SLs were also explored. At low temperature the bleaching is best described as bi-exponential decay. Localisation of the liberated electrons from the 4ƒ⁶5d absorption band was considered for the bleaching effect. It was observed that at elevated temperatures the PL intensity of the 4ƒ⁶5d → 4ƒ⁷ transition was recovered. Combined excitation-emission spectroscopy (CEES) was employed to investigate trivalent Eu centres in SLs. The strong ⁷F₀ → ⁵D₁ excitation and the ⁵D₀ → ⁷F₁ emission of Eu³⁺ were studied. A novel centre, which is assigned as I, of Eu³⁺ in SL was observed and investigated in comparison with the cubic centre (O centre) of Eu³⁺. Relative to the O centre the I centre has shown a strong thickness dependent PL which can be demonstrated with a mono layer (1 ML = 3.15 Å) resolution. Possible transformation of the I centre to the O centre was also observed by additional thermal and UV excitations. The I and the O centres are proposed as the same centre except for having an electron in the vicinity of the I centre.
APA, Harvard, Vancouver, ISO, and other styles
7

Lin, Wenzhi. "Growth and Scanning Tunneling Microscopy Studies of Magnetic Films on Semiconductors and Development of Molecular Beam Epitaxy/Pulsed Laser Deposition and Cryogenic Spin-Polarized Scanning Tunneling Microscopy System." Ohio University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1304610814.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Mußler, Gregor. "Growth and characterization of Ga(As,N) and (In,Ga)(As,N)." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2005. http://dx.doi.org/10.18452/15219.

Full text
Abstract:
Das Thema dieser Dissertation ist das MBE-Wachstum und die Charakterisierung von Ga(As,N) und (In,Ga)(As,N). Die Arbeit beginnt mit der Optimierung des Wachstums von Ga(As,N). Aufgrund der hohen Mischbarkeitslücke von GaN in GaAs verursacht der Einbau von Stickstoff in GaAs eine strukturelle Degradation, die von der Substrattemperatur, der Stickstoffkonzentration und der Quantentopfdicke abhängt. Ein weiteres Problem bezüglich des Wachstums von Ga(As,N) sind Punktdefekte, die einen schädlichen Einfluß auf optische Eigenschaften haben. Eine thermische Behandlung verringert die Konzentration dieser Punktdefekte. Dies geht mit einer Steigerung der Photolumineszenz-Intensität einher. Punktdefekte sind zum Beispiel Stickstoff-Dimere, die sich in Gallium- oder Arsen-Vakanzen einbauen. Eine thermische Behandlung bei hohen Temperaturen bewirkt jedoch eine strukturelle Degradation im Ga(As,N)-Materialsystem, die sich in einer Abnahme der Photolumineszenz-Intensität manifestiert. Es wird gezeigt, daß die Temperatur der thermischen Behandlung, die die höchste Photolumineszenz-Ausbeute erzielt, von der Stickstoffkonzentration abhängt. Bezüglich des Wachstums von (In,Ga)(As,N) verursacht die Mischbarkeitslücke von (In,Ga)N in (In,Ga)As ebenfalls eine strukturelle Degradation. Auch im quaternären Materialsystem ist eine thermische Behandlung essentiell für die Verbesserung optischer Eigenschaften. Es wird außerdem gezeigt, daß die thermische Behandlung von (In,Ga)As eine Indiumdiffusion verursacht, die durch den Einbau von Stickstoff gestoppt wird. Die Charakterisierung von (In,Ga)(As,N) kantenemittierenden Lasern zeigt Emissionen bei Wellenlängen bis zu 1366 nm. Mit dem Einbau von Stickstoff ist ein Anstieg der Schwellstromdichte und ein Abfall der Emissionsleistung verbunden.
This dissertation deals with the MBE growth and characterization of Ga(As,N) and (In,Ga)(As,N). The work commences with the optimization of the Ga(As,N) growth. Owing to a large miscibility gap of GaN in GaAs, the incorporation of nitrogen into GaAs causes a structural degradation that is dependent on the substrate temperature, the nitrogen concentration, and the quantum well thickness. Another problem related to the growth of Ga(As,N) are point defects that have a detrimental influence on optical properties. A thermal treatment of Ga(As,N) reduces the concentration of these point defects. This leads to a substantial improvement of optical properties. We will show that nitrogen split interstitials that incorporate into gallium and arsenic vacancies may be attributed to these point defects. A thermal treatment of Ga(As,N) at high temperatures, on the contrary, results in a creation of extended defects which are detrimental to optical properties. We will show that the temperature of the thermal treatment that yields the highest photoluminescence intensity is nitrogen concentration-dependent. The growth of (In,Ga)(As,N) is similar with respect to Ga(As,N). Again, one has to face a high miscibility gap of (In,Ga)N in (In,Ga)As that results in a structural degradation. A thermal treatment of (In,Ga)(As,N) is also beneficial for improving optical properties. We will show that a thermal treatment of (In,Ga)As results in an indium diffusion that is suppressed by the incorporation of nitrogen. The characterization of (In,Ga)(As,N) edge emitting lasers shows emission at wavelengths up to 1366 nm. With higher nitrogen concentrations, there is a strong increase of the threshold current density and a decrease of the output power.
APA, Harvard, Vancouver, ISO, and other styles
9

Isakov, I. "Semiconductor nanowires grown by molecular beam epitaxy for electronics applications." Thesis, University College London (University of London), 2015. http://discovery.ucl.ac.uk/1463378/.

Full text
Abstract:
One-dimensional nanostructures such as semiconductor nanowires are very attractive for application in next generation electronics. This work presents an experimental study of InAs-based and ZnO-based nanowires grown by molecular beam epitaxy for electronics applications. InAs, InAsP and InAsSb nanowires were grown self-catalytically on silicon. Phosphorus incorporation was studied by means of HRTEM, XRD, EDX and PL. The phosphorus incorporation rate was shown to be 10 times smaller than that of arsenic. InAs and InAsP nanowires exhibit the wurtzite structure with a high density of stacking faults and phase boundaries. Conversely, InAsSb nanowires exhibit the zincblende structure with the density of stacking faults decreasing as the antimony content increases. Antimony incorporation and reduction of the stacking fault density improves the nanowire mobility. ZnO and ZnMgO nanowires and ZnO/ZnMgO core-shell nanowire heterostructures were grown by plasma-assisted molecular beam epitaxy on various substrates with gold particles as a growth catalyst. Nanowire growth was shown to occur only at temperatures between 700 and 850 C and Zn pressures between 1 and 3 10 7 Torr. A two-step growth procedure on silicon was implemented to increase the yield of nanowire growth. Mg incorporation was shown to be 4 times smaller than that of Zn. At Mg content higher than 20 %, MgZnO rocksalt phase segregation is observed in the as-grown samples. Core-shell nanowires were fabricated by growing the shell at a lower temperature of 500 C. ZnO nanowire field effect transistors were fabricated and optimised. High- and low-temperature transport measurements allowed determination of the bulk nanowire and contact properties. Nanowires grown on sapphire and silicon were compared. Nanowires grown on sapphire exhibit an extra donor that determines their low temperature conductivity and give a wider photoluminescence band-edge emission peak. A novel technique to measure the spectrum of deep traps in nanowire field effect transistors was implemented to study ZnO nanowires.
APA, Harvard, Vancouver, ISO, and other styles
10

Bae, Hopil. "Growth of 1.5-1.55 [micron] GaInNAsSb lasers by molecular beam epitaxy /." May be available electronically:, 2009. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Semiconductor lasers Molecular beam epitaxy"

1

Growth processes and surface phase equilibria in molecular beam epitaxy. Berlin: Springer, 1999.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Leys, Maarten Reinier. Metal organic vapour phase epitaxy for the growth of III-V semiconductor structures =: Metaalorganische gasfase epitaxie voor de groel van III-V halfgeleiderstructuren. [S.l: s.n., 1990.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Symposium A on Semiconductor Materials for Optoelectronic Devices and OEICs (1993 Strasbourg, France). Semiconductor materials for optoelectronics and LTMBE materials: Proceedings of Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs, and Photonics and Symposium B on Low Temperature Molecular Beam Epitaxial III-V Materials: Physics and Applications of the 1993 E-MRS Spring Conference, Strasbourg, France, May 4-7, 1993. Amsterdam: North-Holland, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

International Symposium on Silicon Molecular Beam Epitaxy (6th 1995 Strasbourg, France). Selected topics in group IV and II-VI semiconductors: Proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995. Amsterdam: Elsevier, 1996.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

L, Green Martin, Metallurgical Society of AIME. New Jersey Chapter., and Materials Research Society, eds. Semiconductor-based heterostructures: Interfacial structure and stability : proceedings of the Northeast Regional Meeting of the Metallurgical Society, sponsored by the New Jersey Chapter and the Materials Research Society, held at AT&T Bell Laboratories, Murray Hill, New Jersey, May 1-2, 1986. Warrendale, Pa: Metallurgical Society, 1986.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Thin-film organic photonics: Molecular layer deposition and applications. Boca Raton: Taylor & Francis, 2011.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Parson, Kevin J. Wide stripe, high power diode lasers. 1992.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

McGlynn, E., M. O. Henry, and J. P. Mosnier. ZnO wide-bandgap semiconductor nanostructures: Growth, characterization and applications. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.14.

Full text
Abstract:
This article describes the growth, characterization and applications of zinc oxide (ZnO) wide-bandgap semiconductor nanostructures. It first introduces the reader to the basic physics and materials science of ZnO, with particular emphasis on the crystalline structure, electronic structure, optical properties and materials properties of ZnO wide-bandgap semiconductors. It then considers some of the commonly used growth methods for ZnO nanostructures, including vapor-phase transport, chemical vapor deposition, molecular beam epitaxy, pulsed-laser deposition, sputtering and chemical solution methods. It also presents the results of characterization of ZnO nanostructures before concluding with a discussion of some promising areas of application of ZnO nanostructures, such as field emission applications; electrical, optical/photonic applications; and applications in sensing, energy production, photochemistry, biology and engineering.
APA, Harvard, Vancouver, ISO, and other styles
9

Scott, Wang, Chan W. S, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Program., eds. Fabrication of photovoltaic laser energy converter by MBE. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Program, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Scott, Wang, Chan W. S, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Program., eds. Fabrication of photovoltaic laser energy converter by MBE. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Program, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Semiconductor lasers Molecular beam epitaxy"

1

Kawamura, Yuichi. "Applications of III-V Semiconductors for Mid-infrared Lasers." In Molecular Beam Epitaxy, 169–74. Chichester, UK: John Wiley & Sons Ltd, 2019. http://dx.doi.org/10.1002/9781119354987.ch10.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Tsang, W. T. "Semiconductor Lasers and Photodetectors by Molecular Beam Epitaxy." In Molecular Beam Epitaxy and Heterostructures, 575–623. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5073-3_16.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Tsang, W. T. "Semiconductor Lasers and Photodetectors." In The Technology and Physics of Molecular Beam Epitaxy, 467–553. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_15.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Kushvaha, Sunil S., M. Senthil Kumar, Bipin K. Gupta, and K. K. Maurya. "Laser Molecular Beam Epitaxy Growth of GaN Layer on Sapphire (0001) Under Various Process Conditions." In Physics of Semiconductor Devices, 873–76. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_224.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Senthil Kumar, M., S. S. Kushvaha, and K. K. Maurya. "Low Temperature Growth of GaN Epitaxial Layer on Sapphire (0001) Substrate by Laser Molecular Beam Epitaxy Technique." In Physics of Semiconductor Devices, 807–9. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_207.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Zhang, Yong-Hang. "Heterovalent Semiconductor Structures and their Device Applications." In Molecular Beam Epitaxy, 463–81. Chichester, UK: John Wiley & Sons Ltd, 2019. http://dx.doi.org/10.1002/9781119354987.ch28.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Beere, Harvey E., and David A. Ritchie. "Molecular Beam Epitaxial Growth of Terahertz Quantum Cascade Lasers." In Molecular Beam Epitaxy, 175–90. Chichester, UK: John Wiley & Sons Ltd, 2019. http://dx.doi.org/10.1002/9781119354987.ch11.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Tanaka, Masaaki. "Ferromagnet/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy." In Molecular Beam Epitaxy, 229–347. Chichester, UK: John Wiley & Sons Ltd, 2019. http://dx.doi.org/10.1002/9781119354987.ch20.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Akahane, Kouichi, and Yoshiaki Nakata. "Applications of III-V Semiconductor Quantum Dots in Optoelectronic Devices." In Molecular Beam Epitaxy, 150–67. Chichester, UK: John Wiley & Sons Ltd, 2019. http://dx.doi.org/10.1002/9781119354987.ch9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Kasper, E. "Silicon Molecular Beam Epitaxy (Si-MBE)." In Semiconductor Silicon, 36–60. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Semiconductor lasers Molecular beam epitaxy"

1

Corvini, P. J., P. A. Bournes, F. Fang, M. Finander, M. Jansen, R. F. Nabiev, M. Widman, et al. "Performance and reliability of high-power 670-690 nm CW laser diode bars grown by solid source molecular beam epitaxy." In Advanced Semiconductor Lasers and Their Applications. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/asla.1999.10.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Chen, Xuanhu, Jiandong Ye, Shulin Gu, Rong Zhang, and Youdou Zheng. "Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga2O3 Films on $(\overline{2}01)\ \beta$-Ga2O3 by Laser Molecular Beam Epitaxy." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819285.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Hwang, W. Y., J. N. Baillargeon, S. N. G. Chu, P. F. Sciortino, and A. Y. Cho. "1.3 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy." In Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors. IEEE, 1997. http://dx.doi.org/10.1109/iscs.1998.711574.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Baillargeon, J. N., W. Y. Hwang, S. N. G. Chu, and A. Y. Cho. "Solid source molecular beam epitaxy of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ materials for 1.3 /spl mu/m lasers." In Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors. IEEE, 1997. http://dx.doi.org/10.1109/iscs.1998.711572.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

PANISH, MORTON B., and HENRYK TEMKIN. "Gas source molecular beam epitaxy." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 1985. http://dx.doi.org/10.1364/cleo.1985.tho1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Balanyuk, V. V., A. S. Chernikov, V. F. Krasnov, S. L. Musher, V. E. Ryabchenko, A. M. Prokhorov, I. A. Dubovoi, V. K. Ushakov, and M. Y. Schelev. "Synthesis Of The Multialkali Photocathodes By Molecular Beam Epitaxy." In 1988 Semiconductor Symposium, edited by Harold G. Craighead and Jagdish Narayan. SPIE, 1988. http://dx.doi.org/10.1117/12.947393.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Mawby, P. A., A. Perez-Tomas, M. R. Jennings, M. Davis, J. A. Covington, V. Shah, and T. Grasby. "Molecular beam epitaxy Si/4H-SiC heterojunction diodes." In 2007 International Workshop on Physics of Semiconductor Devices. IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472633.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Averbeck, Robert, A. Graber, H. Tews, D. Bernklau, Ulrich Barnhoefer, and Henning Riechert. "GaN-based LEDs grown by molecular beam epitaxy." In Optoelectronics and High-Power Lasers & Applications, edited by E. F. Schubert. SPIE, 1998. http://dx.doi.org/10.1117/12.304427.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Beye, A. C., G. Neu, J. P. Contour, J. C. Garcia, and B. Gil. "Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy." In 1988 Semiconductor Symposium, edited by Orest J. Glembocki, Fred H. Pollak, and Fernando A. Ponce. SPIE, 1988. http://dx.doi.org/10.1117/12.947427.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Aleksandrov, S. E., Gennadii A. Gavrilov, A. A. Kapralov, Galina Y. Sotnikova, Dmitri F. Chernykh, Andrey N. Alexeev, and A. P. Shkurko. "Radiation thermometer configured for GaAs molecular beam epitaxy." In Lasers for Measurements and Information Transfer 2002, edited by Vadim E. Privalov. SPIE, 2003. http://dx.doi.org/10.1117/12.501551.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Semiconductor lasers Molecular beam epitaxy"

1

Pijaili, S. Thermally robust optical semiconductor devices using molecular beam epitaxy grown AlGaInAs. Office of Scientific and Technical Information (OSTI), December 1997. http://dx.doi.org/10.2172/9794.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Samarth, Nitin. Acquisition of Molecular Beam Epitaxy System for Fabrication of Hybrid Magnetic/Semiconductor Heterostructures. Fort Belvoir, VA: Defense Technical Information Center, November 2000. http://dx.doi.org/10.21236/ada384761.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Semiconductor lasers Molecular beam epitaxy' for particular source types:
Journal articles Dissertations / Theses Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography