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Books on the topic 'Semiconductor lasers Molecular beam epitaxy'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 February 2022

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1

Growth processes and surface phase equilibria in molecular beam epitaxy. Berlin: Springer, 1999.

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2

Leys, Maarten Reinier. Metal organic vapour phase epitaxy for the growth of III-V semiconductor structures =: Metaalorganische gasfase epitaxie voor de groel van III-V halfgeleiderstructuren. [S.l: s.n., 1990.

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3

Symposium A on Semiconductor Materials for Optoelectronic Devices and OEICs (1993 Strasbourg, France). Semiconductor materials for optoelectronics and LTMBE materials: Proceedings of Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs, and Photonics and Symposium B on Low Temperature Molecular Beam Epitaxial III-V Materials: Physics and Applications of the 1993 E-MRS Spring Conference, Strasbourg, France, May 4-7, 1993. Amsterdam: North-Holland, 1993.

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4

International Symposium on Silicon Molecular Beam Epitaxy (6th 1995 Strasbourg, France). Selected topics in group IV and II-VI semiconductors: Proceedings of Symposium L, 6th International Symposium on Silicon Molecular Beam Epitaxy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995. Amsterdam: Elsevier, 1996.

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5

L, Green Martin, Metallurgical Society of AIME. New Jersey Chapter., and Materials Research Society, eds. Semiconductor-based heterostructures: Interfacial structure and stability : proceedings of the Northeast Regional Meeting of the Metallurgical Society, sponsored by the New Jersey Chapter and the Materials Research Society, held at AT&T Bell Laboratories, Murray Hill, New Jersey, May 1-2, 1986. Warrendale, Pa: Metallurgical Society, 1986.

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6

Thin-film organic photonics: Molecular layer deposition and applications. Boca Raton: Taylor & Francis, 2011.

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7

Parson, Kevin J. Wide stripe, high power diode lasers. 1992.

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8

McGlynn, E., M. O. Henry, and J. P. Mosnier. ZnO wide-bandgap semiconductor nanostructures: Growth, characterization and applications. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.14.

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This article describes the growth, characterization and applications of zinc oxide (ZnO) wide-bandgap semiconductor nanostructures. It first introduces the reader to the basic physics and materials science of ZnO, with particular emphasis on the crystalline structure, electronic structure, optical properties and materials properties of ZnO wide-bandgap semiconductors. It then considers some of the commonly used growth methods for ZnO nanostructures, including vapor-phase transport, chemical vapor deposition, molecular beam epitaxy, pulsed-laser deposition, sputtering and chemical solution methods. It also presents the results of characterization of ZnO nanostructures before concluding with a discussion of some promising areas of application of ZnO nanostructures, such as field emission applications; electrical, optical/photonic applications; and applications in sensing, energy production, photochemistry, biology and engineering.
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9

Scott, Wang, Chan W. S, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Program., eds. Fabrication of photovoltaic laser energy converter by MBE. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Program, 1993.

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10

Scott, Wang, Chan W. S, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Program., eds. Fabrication of photovoltaic laser energy converter by MBE. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Program, 1993.

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11

Ledentsov, Nikolai N. Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy. Springer, 2010.

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12

Hirtz, J. P., C. Whitehouse, H. P. Meier, H. J. von Bardeleben, and M. O. Manasreh. Semiconductor Materials for Optoelectronics and Ltmbe Materials: Proceedings (European Materials Research Society Symposia Proceedings). North-Holland, 1993.

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13

W, Tu C., Kolodziejski Leslie A, McCrary Victor R, and Materials Research Society, eds. Compound semiconductor epitaxy: Symposium held April 4-7, 1994, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1994.

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14

Klaus, Ploog, Linh N. T, European Materials Research Society, and Council of Europe, eds. Semiconductor quantum well structures and superlattices: May 13th-15th 1985, Strasbourg (France). Les Ulis, France: Editions de physique, 1986.

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15

Schubert, E. F. Delta-doping of Semiconductors. Cambridge University Press, 2005.

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16

A, Madhukar, Society of Photo-optical Instrumentation Engineers., Society of Vacuum Coaters, and SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Device Applications (1990 : San Diego, Calif.), eds. Growth of semiconductor structures and high-Tc thin films on semiconductors: 20-21 March 1990, San Diego, Calfiornia. Bellingham, Wash., USA: The Society, 1990.

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17

Fred, Schubert E., ed. Delta-doping of semiconductors. Cambridge: Cambridge University Press, 1996.

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18

Yoshimura, Tetsuzo. Thin-Film Organic Photonics: Molecular Layer Deposition and Applications. Taylor & Francis Group, 2017.

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19

Vvedensky, Dimitri D. Quantum dots: Self-organized and self-limiting assembly. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.6.

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This article describes the self-organized and self-limiting assembly of quantum dots, with particular emphasis on III–V semiconductor quantum dots. It begins with a background on the second industrial revolution, highlighted by advances in information technology and which paved the way for the era of ‘quantum nanostructures’. It then considers the science and technology of quantum dots, followed by a discussion on methods of epitaxial growth and fabrication methodologies of semiconductor quantum dots and other supported nanostructures, including molecular beam epitaxy and metalorganic vapor-phase epitaxy. It also examines self-organization in Stranski–Krastanov systems, site control of quantum dots on patterned substrates, nanophotonics with quantum dots, and arrays of quantum dots.
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20

Solymar, L., D. Walsh, and R. R. A. Syms. Semiconductors. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0008.

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Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.
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