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Journal articles on the topic 'Semiconductor layer deposits'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 February 2022

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1

Zuo, Jialin, Sean Tavakoli, Deepakkrishna Mathavakrishnan, et al. "Additive Manufacturing of a Flexible Carbon Monoxide Sensor Based on a SnO2-Graphene Nanoink." Chemosensors 8, no. 2 (2020): 36. http://dx.doi.org/10.3390/chemosensors8020036.

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Carbon monoxide (CO) gas is an odorless toxic combustion product that rapidly accumulates inside ordinary places, causing serious risks to human health. Hence, the quick detection of CO generation is of great interest. To meet this need, high-performance sensing units have been developed and are commercially available, with the vast majority making use of semiconductor transduction media. In this paper, we demonstrate for the first time a fabrication protocol for arrays of printed flexible CO sensors based on a printable semiconductor catalyst-decorated reduced graphene oxide sensor media. The

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2

Moon, Yeon-Keon, Dae-Yong Moon, Sang-Ho Lee, Chang-Oh Jeong, and Jong-Wan Park. "High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering." Journal of Nanoscience and Nanotechnology 8, no. 9 (2008): 4557–60. http://dx.doi.org/10.1166/jnn.2008.ic24.

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Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputter

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3

Geiler, Hans D. "Laser Annealing of Implanted Semiconductor Layers – One Bridge to Nano-Processing." Materials Science Forum 573-574 (March 2008): 237–56. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.237.

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About 25years after inventing the laser annealing effects of ion implanted semiconductors a summary of the related physical phenomena is given. The field of application for short and selectively deposited energy pulses in controlled thermally activated processing is critically reviewed with the emphasis on electrical activation of implanted layers. Starting form the energy deposition and continuing to the excited transport phenomena a set of regimes can be described, which allows the classification of the variety of laser annealing methods and their different application. Within the scope of c

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4

Kutanov, Askar, Nurbek Sydyk uluu, and Zamirgul Kazakbaeva. "RELIEF RECORDING SILVER AT DIRECT LASER EXPOSURE ON THE LAYER OF AMORPHOUS SILICON." Interexpo GEO-Siberia 8 (2019): 52–56. http://dx.doi.org/10.33764/2618-981x-2019-8-52-56.

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Results of direct laser recording on a two-component medium consisting of deposited layers of amorphous silicon and silver on a glass substrate by magnetron sputtering are presented. A single-mode semiconductor laser with λ = 405 nm for amorphous silicon film on glass substrate with a power of 120 mW is used for direct laser recording on amorphous silicon. Formation of the relief on the silver film with direct recording pulses of a semiconductor laser with λ = 405 nm at the a-Si layer is taken on the electron microscope TESCAN VEGA 3 LMH.

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5

Wang, Shuhao, Junfeng Shen, Baisong Du, Kexin Xu, Zhengshuai Zhang, and Chengyu Liu. "The Relationship between Natural Pyrite and Impurity Element Semiconductor Properties: A Case Study of Vein Pyrite from the Zaozigou Gold Deposit in China." Minerals 11, no. 6 (2021): 596. http://dx.doi.org/10.3390/min11060596.

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Pyrite is a common sulfide mineral in gold deposits, and its unique thermoelectricity has received extensive attention in the field of gold exploration. However, there is still a lack of detailed research and direct evidence about how impurity elements affect mineral semiconductor properties. In this paper, combined with first-principles calculations, laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) mapping technology and in situ Seebeck coefficient scanning probe technology were used to study the law of changing semiconductor properties in pyrite containing impurity ele

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Zhang, Chun Min, Xiao Yong Liu, Lin Qing Zhang, Hong Liang Lu, Peng Fei Wang, and David Wei Zhang. "Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing." Materials Science Forum 815 (March 2015): 8–13. http://dx.doi.org/10.4028/www.scientific.net/msf.815.8.

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A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO2 thin films were then reduced into metallic Ru thin films by H2/N2-assisted annealing.

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7

Kim, Jae Yoo. "The Stability Effect of Atomic Layer Deposition (ALD) of Al₂O₃ on CH₃NH₃PbI₃ Perovskite Solar Cell Fabricated by Vapor Deposition." Key Engineering Materials 753 (August 2017): 156–62. http://dx.doi.org/10.4028/www.scientific.net/kem.753.156.

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The perovskite solar cells (PSCs) with Al2O3 passivation layer were fabricated and characterized. The PSC have some advantages of easier and cheaper fabrication process than that of conventional Si solar cells, III-V compound semiconductor solar cells, and organic solar cells. The perovskite light harvester, CH3NH3PbI3, was deposited by vapor deposition on [compact TiO2 / F-doped tin oxide (FTO) / glass]. The advantage of vapor deposition over solution process is expected to be able to offer the thin film with smoother surface over larger area. Then, Al2O3 passivation layer was deposited by at

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8

ARIFIN, Zainal, Syamsul HADI, Suyitno SUYITNO, Aditya Rio PRABOWO, and Singgih Dwi PRASETYO. "CHARACTERIZATION OF ZnO NANOFIBER ON DOUBLE-LAYER DYE-SENSITIZED SOLAR CELLS USING DIRECT DEPOSITION METHOD." Periódico Tchê Química 17, no. 36 (2020): 263–77. http://dx.doi.org/10.52571/ptq.v17.n36.2020.278_periodico36_pgs_263_277.pdf.

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Solar cells are capable of harvesting energy by converting solar heat into electrical energy through the photovoltaic process. A type of solar cell, namely dye-sensitized solar cells (DSSCs) which based on doublelayer photoanode is attracting researchers and engineers considering its characteristics, e.g., high efficiency, low cost, and available mass-production. The TiO2-ZnO double-layer semiconductor can be obtained from a nanofiber ZnO semiconductor which is deposited with a TiO2 nanoparticle semiconductor. In this study, the direct deposition method was applied using an electrospinning mac

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9

Maeda, Akihiro, Aki Nakauchi, Yusuke Shimizu, et al. "A Windmill-Shaped Molecule with Anthryl Blades to Form Smooth Hole-Transport Layers via a Photoprecursor Approach." Materials 13, no. 10 (2020): 2316. http://dx.doi.org/10.3390/ma13102316.

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Preparation of high-performance organic semiconductor devices requires precise control over the active-layer structure. To this end, we are working on the controlled deposition of small-molecule semiconductors through a photoprecursor approach wherein a soluble precursor compound is processed into a thin-film form and then converted to a target semiconductor by light irradiation. This approach can be applied to layer-by-layer solution deposition, enabling the preparation of p–i–n-type photovoltaic active layers by wet processing. However, molecular design principles are yet to be established t

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10

Fragoudakis, Roselita, Michael A. Zimmerman, and Anil Saigal. "Application of a Ag Ductile Layer in Minimizing Si Die Stresses in LDMOS Packages." Key Engineering Materials 605 (April 2014): 372–75. http://dx.doi.org/10.4028/www.scientific.net/kem.605.372.

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Lateral Diffused Metal Oxide Semiconductors (LDMOS) normally have a Cu-W flange, whose CTE is matched to Si. Low cost Cu substrate material provides 2X high thermal conductivity, and along with a AuSi eutectic solder is recommended for optimal thermal performance. However, the CTE mismatch between Cu and Si can lead to failure of the semiconductor as a result of die fracture, due to thermal stresses developed during the soldering step of the manufacturing process. Introducing a Ag ductile layer is very important in minimizing such thermal stresses and preventing catastrophic failure of the sem

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11

Grigoropoulos, C. P., and W. E. Dutcher. "Moving Front Fixing in Thin Film Laser Annealing." Journal of Heat Transfer 114, no. 1 (1992): 271–77. http://dx.doi.org/10.1115/1.2911257.

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The process of laser melting and recrystallization of thin silicon films, which are deposited on amorphous substrates, is capable of improving the semiconductor electrical and crystalline properties. The process is controlled by the intensity of the laser beam, the material translation speed, and the thermal and radiative properties of the semiconductor layer and the encapsulating structure. Accurate theoretical modeling of the associated phase change process is essential for optimal material processing. This paper presents a numerical model implementing a front-fixing approach and body-fitted

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Daniel, T. O., U. E. Uno, K. U. Isah та U. Ahmadu. "Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application". Revista Mexicana de Física 67, № 2 Mar-Apr (2021): 263–68. http://dx.doi.org/10.31349/revmexfis.67.263.

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This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-

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13

Dominguez, J. E., L. Fu, and X. Q. Pan. "TEM Study of the Effect of the Sapphire Substrate Surface Orientation on the Microstructure of Tin Dioxide Films." Microscopy and Microanalysis 7, S2 (2001): 1220–21. http://dx.doi.org/10.1017/s1431927600032177.

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Tin dioxide (SnO2) has been extensively studied and used as gas sensors to detect toxic gases such as CO, NOxand flammable gases like H2.[l] Recently, considerable researches have focused on thin film sensors due to their high performance as well as their integration compatibility with semiconductor technology for making microsensors and sensor arrays. [2] The performance of thin film sensors is remarkably influenced by the way they were fabricated.[3] Among various deposition techniques, pulsed laser deposition (PLD) has shown great prominence in the deposition of a wide variety of oxide thin

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14

Жуков, Н. Д., М. И. Шишкин та А. Г. Роках. "Плазменное отражение в мультизеренном слое узкозонных полупроводников". Письма в журнал технической физики 44, № 8 (2018): 102. http://dx.doi.org/10.21883/pjtf.2018.08.45973.17010.

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AbstractQualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70

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15

Rajput, Deepak, Lino Costa, Kathleen Lansford, George M. Murray, and WilliamH Hofmeister. "Laser-Assisted Deposition of Transition Metal Coatings on Graphite." REVIEWS ON ADVANCED MATERIALS SCIENCE 57, no. 2 (2018): 158–66. http://dx.doi.org/10.1515/rams-2018-0060.

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Abstract This paper reports the deposition of transition metal coatings on graphite by laser melting a pre-placed layer of powder particles using a continuous wave (CW) laser. Titanium, zirconium, and niobium coatings were successfully deposited on semiconductor grade graphite plates using the laser induced surface improvement (LISI) approach. The coatings produced were characterized using scanning electron microscope, energy dispersive spectrometry, X-ray diffraction, microhardness testing, and secondary ion mass spectrometry. Results show the formation of crack-free and dense transition meta

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Sánchez Vergara, María Elena, Lorena Ramírez Vargas, Citlalli Rios, Bertha Molina, and Roberto Salcedo. "Investigation of Structural and Optoelectronic Properties of Organic Semiconductor Film Based on 8-Hydroxyquinoline Zinc." Electronics 10, no. 2 (2021): 117. http://dx.doi.org/10.3390/electronics10020117.

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In this work, we investigated an organic semiconductor based on zinc 8-hydroxyquinoline (ZnQ2) and tetracyanoquinodimethane (TCNQ), which can be used as a photoactive layer in organic devices. The semiconductor was optimized by applying density-functional theory (DFT) methods, and four hydrogen bridges were formed between ZnQ2 and TCNQ. Later, thin films of ZnQ2-TCNQ were successfully deposited. The films were structurally and morphologically characterized, and the optical characteristics of the photoactive layer were investigated using ultraviolet–visible spectroscopy and time-dependent densi

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Sánchez Vergara, María Elena, Lorena Ramírez Vargas, Citlalli Rios, Bertha Molina, and Roberto Salcedo. "Investigation of Structural and Optoelectronic Properties of Organic Semiconductor Film Based on 8-Hydroxyquinoline Zinc." Electronics 10, no. 2 (2021): 117. http://dx.doi.org/10.3390/electronics10020117.

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In this work, we investigated an organic semiconductor based on zinc 8-hydroxyquinoline (ZnQ2) and tetracyanoquinodimethane (TCNQ), which can be used as a photoactive layer in organic devices. The semiconductor was optimized by applying density-functional theory (DFT) methods, and four hydrogen bridges were formed between ZnQ2 and TCNQ. Later, thin films of ZnQ2-TCNQ were successfully deposited. The films were structurally and morphologically characterized, and the optical characteristics of the photoactive layer were investigated using ultraviolet–visible spectroscopy and time-dependent densi

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18

Agarwal, Aanchal, Wei-Yang Tien, Yu-Sheng Huang, et al. "ZnO Nanowires on Single-Crystalline Aluminum Film Coupled with an Insulating WO3 Interlayer Manifesting Low Threshold SPP Laser Operation." Nanomaterials 10, no. 9 (2020): 1680. http://dx.doi.org/10.3390/nano10091680.

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ZnO nanowire-based surface plasmon polariton (SPP) nanolasers with metal–insulator–semiconductor hierarchical nanostructures have emerged as potential candidates for integrated photonic applications. In the present study, we demonstrated an SPP nanolaser consisting of ZnO nanowires coupled with a single-crystalline aluminum (Al) film and a WO3 dielectric interlayer. High-quality ZnO nanowires were prepared using a vapor phase transport and condensation deposition process via catalyzed growth. Subsequently, prepared ZnO nanowires were transferred onto a single-crystalline Al film grown by molec

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19

Sarnet, Tiina, Timo Hatanpää, Mikko Laitinen, et al. "Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process." Journal of Materials Chemistry C 4, no. 3 (2016): 449–54. http://dx.doi.org/10.1039/c5tc03079j.

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20

Xing, Weilong, Jie Chen, Yingying Liang, et al. "Optimization of the thermoelectric performance of layer-by-layer structured copper-phthalocyanine (CuPc) thin films doped with hexacyano-trimethylene-cyclopropane (CN6-CP)." RSC Advances 9, no. 55 (2019): 31840–45. http://dx.doi.org/10.1039/c9ra06381a.

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21

Mohammed, Suzan B., Hayder J. Abdulrahman, and Ayoub A. Bazzaz. "Tuning Hybrid Nano-semiconductor-glass Via High Intensity Laser." NeuroQuantology 19, no. 7 (2021): 35–40. http://dx.doi.org/10.14704/nq.2021.19.7.nq21081.

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Conceptually, the high intensity laser represents the simplest thin film deposition techniques that consists of both a target and a substrate holders housed in a vacuum chamber with a high powered pulsed laser as the external energy source for evaporation of target material (Semiconductor Glass). Using deposit thin laser films three ranges of frequencies were produced: (0-15,000 mJ/cm2) as a result tuning of semiconductor was satisfying condition, while the second, 0-33,000 mJ/cm2 as a result tuning of semiconductor had a stable condition and the last 0-100,000 mJ/cm2 as a result tuning of sem

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22

Hussin, Rosniza, Xiang Hui Hou, and Kwang Leong Choy. "Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition." Defect and Diffusion Forum 329 (July 2012): 159–64. http://dx.doi.org/10.4028/www.scientific.net/ddf.329.159.

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Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD

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Peacock, Anna C., Stuart J. MacFarquhar, Yohann Franz, et al. "Laser processed semiconductors for integrated photonic devices -INVITED." EPJ Web of Conferences 238 (2020): 01001. http://dx.doi.org/10.1051/epjconf/202023801001.

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We report results of laser processing of amorphous silicon and silicon-germanium semiconductor materials for the production of integrated photonic platforms. As the materials are deposited and processed at low temperatures, they are flexible, low cost, and suitable for multi-layer integration with other photonic or electronic layers. We demonstrate the formation of waveguides via crystallization of pre-patterned silicon components and functional microstructures through crystallization and compositional tuning of silicon-germanium alloy films. These results open a route for the fabrication of h

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24

Banerjee, Sneha, Rajendra Dahal, and Ishwara Bhat. "Low Temperature Metalorganic Chemical Vapor Deposition of Semiconductor Thin Films for Surface Passivation of Photovoltaic Devices." MRS Advances 1, no. 50 (2016): 3379–90. http://dx.doi.org/10.1557/adv.2016.386.

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ABSTRACT Three II-VI wide bandgap compound semiconductors have been investigated for surface passivation of various photovoltaic devices. First part of this work focuses on the surface passivation of HgCdTe IR detectors using CdTe. A new metalorganic chemical vapor deposition (MOCVD) process has been developed that involves depositing CdTe films at much lower temperature (&lt; 175°C) than the conventional processes used till now. Deposition rate as high as 420nm/h was obtained using this novel experimental setup. Favorable conformal coverage on high aspect ratio HgCdTe devices along with a

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25

Sheng, Jiazhen, Dong-won Choi, Seung-Hwan Lee, Jozeph Park, and Jin-Seong Park. "Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states." Journal of Materials Chemistry C 4, no. 32 (2016): 7571–76. http://dx.doi.org/10.1039/c6tc01199c.

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Gao, Xian, Ji Long Tang, Dan Fang, et al. "The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes." Advanced Materials Research 1118 (July 2015): 270–75. http://dx.doi.org/10.4028/www.scientific.net/amr.1118.270.

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Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semicon

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27

Yang, B., and E. Pan. "Elastic Fields of Quantum Dots in Multilayered Semiconductors: A Novel Green’s Function Approach." Journal of Applied Mechanics 70, no. 2 (2003): 161–68. http://dx.doi.org/10.1115/1.1544540.

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We present an efficient and accurate continuum-mechanics approach to predict the elastic fields in multilayered semiconductors due to buried quantum dots (QDs). Our approach is based on a novel Green’s function solution in anisotropic and linearly elastic multilayers, derived within the framework of generalized Stroh formalism and Fourier transforms, in conjunction with the Betti’s reciprocal theorem. By using this approach, the induced elastic fields due to QDs with general misfit strains are expressed as a volume integral over the QDs domains. For QDs with uniform misfit strains, the volume

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28

Hultman, L., C. H. Choi, R. Kaspi, R. Ai, and S. A. Barnett. "Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 686–87. http://dx.doi.org/10.1017/s0424820100176563.

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III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of

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29

Litz-Montanaro, Lisa. "The Art of Tungsten Etching in Semiconductor Chips." Microscopy Today 7, no. 2 (1999): 24–25. http://dx.doi.org/10.1017/s1551929500063902.

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In the course of both physical and failure analysis of semiconductor chips (i.e., verifying what you actually deposited as a layer, vs, what caused the circuit to fail), it is essential to have appropriate deprocessing tools at your disposal in order to evaluate complex semiconductor structures, Deprocessing techniques are developed for each product manufactured and involve multi-step procedures that reveal the layer-by-layer secrets of the chip, These techniques require constant tweaking in duration and procedure as the manufacturing process imposes changes and as the architecture of the semi

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Jeong, Suk Hoon, Heon Deok Seo, Boum Young Park, et al. "Electro-Chemical Mechanical Deposition for Planarization of Cu Interconnect." Key Engineering Materials 326-328 (December 2006): 389–92. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.389.

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As copper technology moves from pilot to volume manufacturing, semiconductor fabrication is focused on methods to improve device yield. In especially semiconductor manufacturing, electrochemically deposited copper is the material of choice for advanced interconnect applications. Electrochemical deposition (ECD) employs copper plating electrolytes with organic additives to achieve bottom-up filling of small vias and trench with high aspect-ratios. However, for features with small aspect-ratios, the ECD process yields conformal layers because the additives and the bottom-up fill mechanism are no

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Vizza, Martina, Andrea Giaccherini, Walter Giurlani, et al. "Successes and Issues in the Growth of Moad and MoSe2 on Ag(111) by the E-ALD Method." Metals 9, no. 2 (2019): 122. http://dx.doi.org/10.3390/met9020122.

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This paper explores the conditions for the electrodeposition of Moad (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe2 are also presented, performing the deposition of Sead on the deposited Moad. The deposition of Moad on Sead/Ag(111) was also explored. MoSe2 is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques.

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Kikuchi, Kenji, Shigeyuki Imura, Kazunori Miyakawa, Hiroshi Ohtake, Misao Kubota, and Eiji Ohta. "Improved Electrical Properties of Ga2O3:Sn/CIGS Hetero-Junction Photoconductor." MRS Proceedings 1635 (2014): 83–88. http://dx.doi.org/10.1557/opl.2014.104.

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ABSTRACTWe examined the potential application of CuIn1-xGaxSe1-ySy (CIGS) film for visible light image sensors. CIGS chalcopyrite semiconductors, which are representative of high efficiency thin film solar cells, have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. The dark current of this hetero-junction was 10-9 A/cm2 at less than 7 V. Moreover, an avalanche multiplication phenomenon was observed at

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Peng, W., O. Seitz, R. A. Chapman, E. M. Vogel, and Y. J. Chabal. "Probing the intrinsic electrical properties of thin organic layers/semiconductor interfaces using an atomic-layer-deposited Al2O3 protective layer." Applied Physics Letters 101, no. 5 (2012): 051605. http://dx.doi.org/10.1063/1.4742168.

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Bian, Ji Ming, Xiao Min Li, Xiang Dong Gao, and Wei Dong Yu. "Growth and Characterization of High Quality MgO Thin Films by Ultrasonic Spray Pyrolysis." Key Engineering Materials 280-283 (February 2007): 1171–74. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.1171.

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Ultrasonic spray pyrolysis has been applied to deposit MgO thin films on Si(100) and quartz glass substrate. The microstructures and properties of the as-grown MgO thin films were examined by X-ray diffraction, scanning electron microscopy, spectrophotometer and semiconductor resistivity meter. The results indicates that the MgO thin films deposited under optimal conditions shows smooth and dense surface without visible pores or defects over the substrate, and as well as good thickness uniformity. Almost completely (100)-oriented MgO films with the transmission higher than 90% in UV/VIS region

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Huang, Jie, Hengji Zhang, Antonio Lucero, et al. "Organic–inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)." Journal of Materials Chemistry C 4, no. 12 (2016): 2382–89. http://dx.doi.org/10.1039/c5tc03714j.

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Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic–inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature.

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Leyva Esqueda, Mariel, María Sánchez Vergara, José Álvarez Bada, and Roberto Salcedo. "CuPc: Effects of its Doping and a Study of Its Organic-Semiconducting Properties for Application in Flexible Devices." Materials 12, no. 3 (2019): 434. http://dx.doi.org/10.3390/ma12030434.

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This study refers to the doping of organic semiconductors by a simple reaction between copper phthalocyanine and tetrathiafulvalene or tetracyanoquinodimethane. The semiconductor films of copper phthalocyanine, doped with tetrathiafulvalene donor (CuPc-TTF) and tetracyanoquinodimethane acceptor (CuPc-TCNQ) on different substrates, were prepared by vacuum evaporation. The structure and morphology of the semiconductor films were studied with infrared (IR) spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The absorption spectra for CuPc-TTF, recorded in the 200–900 nm

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Ismail, Lyly Nyl, Saifullah Ali Harun, Habibah Zulkefle, Sukreen Hana Herman, and Mohamad Rusop Mahmood. "Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer." Advanced Materials Research 832 (November 2013): 270–75. http://dx.doi.org/10.4028/www.scientific.net/amr.832.270.

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We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

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Ye, Jian Min. "Application of Wide Band Oxide Semiconductor in Bulk Heterojunction Solar Cells." Applied Mechanics and Materials 198-199 (September 2012): 64–67. http://dx.doi.org/10.4028/www.scientific.net/amm.198-199.64.

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To minimize interfacial power losses, thin layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/Al solar cells. The interfacial NiO layer is deposited by radio frequency (RF) magnetron sputtering deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 2.5% and enhances the

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Danilov, Y. A., Alexei V. Kudrin, O. V. Vikhrova, and B. N. Zvonkov. "Ferromagnetic Semiconductors and Half-Metal Compounds Obtained by Laser Deposition." Solid State Phenomena 168-169 (December 2010): 245–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.168-169.245.

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Laser deposition method was used for growing ferromagnetic semiconductor and half-metal compound layers. GaMnAs and InMnAs layers were grown by alternating laser ablation of solid targets (semiconductor and Mn) in hydrogen and arsine flow. The layers exhibited ferromagnetic properties (detected by Hall effect measurements) from 10 K to room temperature (for InMnAs). Half-metal compound layers were deposited by the techniques of reactive laser deposition (MnAs, MnP) and alternating laser deposition (MnSb). The half-metal layers exhibit ferromagnetism at temperatures up to 300 K.

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de Oliveira Machado, Diego Henrique, Emerson Aparecido Floriano, Luis Vicente de Andrade Scalvi, and Margarida Juri Saeki. "Investigation of Photoinduced Electrical Properties in the Heterojunction TiO₂/SnO₂." Advanced Materials Research 975 (July 2014): 201–6. http://dx.doi.org/10.4028/www.scientific.net/amr.975.201.

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TiO2/SnO2 thin films heterostructures are grown by the sol-gel-dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550°C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100°C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. Electrical properties of TiO2/

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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV, and REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.

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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV

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Егоркин, В. И., С. В. Оболенский, В. Е. Земляков, А. А. Зайцев та В. И. Гармаш. "Исследование ионной имплантации азота через слой нитрида кремния для межприборной изоляции силовых GaN/Si-транзисторов". Письма в журнал технической физики 47, № 18 (2021): 15. http://dx.doi.org/10.21883/pjtf.2021.18.51465.18805.

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This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN on Si heterojunction structure. Employment of Si3N4 layer simplify HEMT fabrication process and helps to obtain high resistivity isolation due to the shift of implanted ions distribution towards the surface of semiconductor. This isolation process in combination with C-doped heterostructure buffer layer results in increased up to 650 V breakdown voltage.

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Grigoropoulos, C. P., W. E. Dutcher, and K. E. Barclay. "Radiative Phenomena in CW Laser Annealing." Journal of Heat Transfer 113, no. 3 (1991): 657–62. http://dx.doi.org/10.1115/1.2910615.

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Recrystallization of thin semiconductor films can yield improved electrical and crystalline properties. Recrystallization is often effected by using a laser source to melt the semiconductor film, which has been deposited on an amorphous insulating substrate. Although temperature measurement data would be valuable for the processing of materials on a microscopic scale, very few such measurements have been presented. It is the intent of this paper to demonstrate work toward the development of completely noninvasive experimental methods for in situ quantitative analysis of the laser annealing pro

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Pavlov, Michael, Mitchell Coffin, Danni Lin, and Eugene Shalyt. "Voltammetric Detection of Low Copper Concentrations in Nickel Plating Baths." International Symposium on Microelectronics 2016, no. 1 (2016): 000050–53. http://dx.doi.org/10.4071/isom-2016-tp24.

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Abstract Nickel electroplating is widely used in semiconductor manufacturing, primarily during the packaging stage. It is not used as a final coating, but instead as a barrier layer to prevent formation of copper–tin intermetallic compounds that affect the reliability of solder joints. The nickel is deposited from baths containing nickel salt (in relatively high concentrations), boric acid, and other ions. The quality of the deposited nickel is highly dependent on the composition of the plating bath. Metallic contaminants are acceptable when their concentrations are below approximately 30 ppm.

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Cheng, Fei, Emanuele Verrelli, Fahad A. Alharthi, et al. "Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors." RSC Advances 10, no. 43 (2020): 25540–46. http://dx.doi.org/10.1039/d0ra04445h.

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A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO<sub>2</sub> nanorods and zinc oxide as the semiconductor, also deposited from solution.

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Yu, H. P., H. Luo, T. T. Liu, and G. Y. Jing. "Deposit heterogeneity and the dynamics of the organic semiconductors P3HT and PCBM solution under evaporation." Modern Physics Letters B 29, no. 09 (2015): 1550028. http://dx.doi.org/10.1142/s0217984915500281.

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The formation of organic semiconductor layer is the key procedure in the manufacture of organic photovoltaic solar cell, in which the natural evaporation of the solvent from the polymer solution plays the essential role for the conversion efficiency. Here, poly(3-hexylthiophene) ( P3HT ) and fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester ( PCBM ), as two types of semiconductor polymers, were selected as the active layer to form the deposit by drying the blend solution drops on the substrate. We explored the influences of droplet size and solute concentration on the homogeneity

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Elmasly, Saadeldin E. T., Luca Guerrini, Joseph Cameron, et al. "Synergistic electrodeposition of bilayer films and analysis by Raman spectroscopy." Beilstein Journal of Organic Chemistry 14 (August 21, 2018): 2186–89. http://dx.doi.org/10.3762/bjoc.14.191.

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A novel methodology towards fabrication of multilayer organic devices, employing electrochemical polymer growth to form PEDOT and PEDTT layers, is successfully demonstrated. Moreover, careful control of the electrochemical conditions allows the degree of doping to be effectively altered for one of the polymer layers. Raman spectroscopy confirmed the formation and doped states of the PEDOT/PEDTT bilayer. The electrochemical deposition of a bilayer containing a de-doped PEDTT layer on top of doped PEDOT is analogous to a solution-processed organic semiconductor layer deposited on top of a PEDOT:

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Moon, Jeong Hyun, Kuan Yew Cheong, Da Il Eom, et al. "Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)." Materials Science Forum 556-557 (September 2007): 643–46. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.643.

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We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to sample having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper.

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Dhingra, Mansi, Sadhna Shrivastava, P. Senthil Kumar, and S. Annapoorni. "Electrical Coupling of Organic/Inorganic Semiconductor Interfaces: A Comparative Study." Advanced Materials Research 974 (June 2014): 210–14. http://dx.doi.org/10.4028/www.scientific.net/amr.974.210.

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The present work attempts to investigate the interfacial phenomenon occurring between two dissimilar materials and in particular organic and inorganic hybrid materials. Layer by layer hybrid heterostructures are fabricated by electro-deposition technique. Here, ZnO thin films are deposited using potentiostatic mode using regulated DC voltage supply fixed at-1.0 V (with respect to the reference electrode) with platinum sheet (99.99% purity) used as the counter electrode and ITO-coated glass used as a working electrode. The as obtained ZnO films are then used as substrates for deposition of orga

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SONG, WOOJIN, KYUBONG JUNG, DOO-MAN CHUN, SUNG-HOON AHN, and CAROLINE SUNYONG LEE. "DEPOSITION OF Al2O3 POWDERS USING NANO-PARTICLE DEPOSITION SYSTEM." Surface Review and Letters 17, no. 02 (2010): 189–93. http://dx.doi.org/10.1142/s0218625x10013710.

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In this paper, alumina film was deposited using supersonic micronozzle in nano-particle deposition System (NPDS). Powder deposition at room temperature is important in the field of film deposition since high processing temperature can be a serious limitation for the deposition on flexible substrate. Previously, many studies have been reported on particle deposition, such as aerosol deposition method (ADM) or cold spray method. However, these deposition methods cannot be applied to various types of powders. Recently, NPDS using aluminum nozzle was designed to resolve these problems but it canno

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