Relevant bibliographies by topics / Semiconductor lighting devices

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Semiconductor lighting devices'

Author: Grafiati
Published: 28 May 2022
Last updated: 30 July 2025

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Journal articles on the topic "Semiconductor lighting devices"

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MUÑOZ, ELIAS. "SEMICONDUCTOR UV SOURCES AND DETECTORS: SOME NON-CONSUMER APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 421–28. http://dx.doi.org/10.1142/s0129156402001344.

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UV emitters and photodetectors based on wide band-gap semiconductors are being investigated and may soon become commercially available. Solid state lighting and information storage are two main applications in the consumer area for these new semiconductor devices. Presently, III-nitrides seem to be the most promising materials for such near UV semiconductor devices. In this work some non-consumer applications are indicated. Biophotonics appears to be a very promising area for such devices.
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Perkins, Jeff. "LED & HB-LED Packaging: Technology & Marketing Trends." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (2010): 001137–76. http://dx.doi.org/10.4071/2010dpc-keynote3_leds.

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If LED lighting is to fulfill the promise it holds across all lighting segments, costs need to drop significantly and production volumes will need to double several times over in the coming years. To achieve both, cost improvements must happen at every level of manufacturing and manufacturing processes must evolve. When talking about LED device costs today, packaging holds the greatest cost saving opportunities. As with many semiconductor devices and for LED devices in particular, wafer level packaging will be a key cost saving move for the future. Much needs to be done and much is being done
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Khramtsov, Igor A., and Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors." Materials 12, no. 12 (2019): 1972. http://dx.doi.org/10.3390/ma12121972.

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Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of accept
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Aygün, Sultanova Haji gizi, and Gahramanova Khazar gizi Didem. "THIRD GENERATION SEMICONDUCTORS." Deutsche internationale Zeitschrift für zeitgenössische Wissenschaft 97 (February 7, 2025): 42–44. https://doi.org/10.5281/zenodo.14832376.

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With the increasingly serious problems of environmental pollution and global warming, the research and application of renewable energy sources have attracted unprecedented attention. Among them, semiconductor technology, as an important tool for promoting green energy transformation, is attracting more and more attention from scientific research and industry. In particular, third-generation semiconductor materials are revolutionizing the field of renewable energy due to their superior physical properties and application prospects. With the rapid development of technology, third-generation
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Roldán-Carmona, Cristina, Takeo Akatsuka, Michele Sessolo, Scott E. Watkins, and Henk J. Bolink. "Engineering Charge Injection Interfaces in Hybrid Light-Emitting Electrochemical Cells." Applied Materials & Interfaces 6, no. 22 (2014): 19520–24. https://doi.org/10.1021/am506697t.

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Light-emitting electrochemical cells (LECs) consists of a thin film of an ionic organic semiconductor sandwiched between two electrodes. Because of the large density of ions, LECs are often reported to perform independently on the electrodes work function. Here we use metal oxides as charge injection layers and demonstrate that, although electroluminescence is observed independently of the electrodes used, the device performances are strongly dependent on the choice of the interface materials. Relying on metal oxide charge injection layers, such hybrid devices are of interest for real lighting
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Berencén, Y., Josep Carreras, O. Jambois, et al. "Metal-nitride-oxide-semiconductor light-emitting devices for general lighting." Optics Express 19, S3 (2011): A234. http://dx.doi.org/10.1364/oe.19.00a234.

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Wang, Yao, Xu Han, Linze Jin, et al. "Excitation Threshold Reduction Techniques for Organic Semiconductor Lasers: A Review." Coatings 13, no. 10 (2023): 1815. http://dx.doi.org/10.3390/coatings13101815.

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Organic semiconductor lasers have shown great application potential in various fields, such as low-cost sensing, high-performance lighting and display, and lab-on-a-chip devices. Since the introduction of organic lasers in the 1960s, research on semiconductor laser devices has expanded to include various materials and structures. The organic laser has attracted much attention due to its wide range of emission spectrum and simple synthesis and processing. Researchers constantly pursue the goal of using organic semiconductors to fabricate low-threshold thin-film organic laser devices while retai
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Chen, Hsueh-Shih. "(Invited) Recent Advancements in the Development of Semiconductor Quantum Dots for Solid-State Light Emitting Diodes and Photovoltaic Devices." ECS Meeting Abstracts MA2023-02, no. 34 (2023): 1667. http://dx.doi.org/10.1149/ma2023-02341667mtgabs.

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Semiconductor quantum dots (QDs) have emerged as a promising class of nanomaterials with diverse applications in areas such as lighting, displays, photo-detectors, and image sensing. The successful commercialization of QD-based displays, exemplified by QLED TVs, demonstrates the technology's market viability. Ongoing research on QD color down-converters for mini-LED and micro-LED technologies, as well as electroluminescent QD devices, holds considerable promise for advancing future lighting and display technologies. Additionally, QDs have exhibited potential in photovoltaic applications, inclu
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Zhang, Yuqian. "The Application of Third Generation Semiconductor in Power Industry." E3S Web of Conferences 198 (2020): 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.

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With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the thi
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Jagadish, Chennupati. "(Dielectric Science &Technology Thomas D. Callinan Award) Semiconductor Nanostructures for Optoelectronics and Energy Applications." ECS Meeting Abstracts MA2023-01, no. 20 (2023): 1503. http://dx.doi.org/10.1149/ma2023-01201503mtgabs.

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Semiconductors have played an important role in the development of information and communications technology, solar cells, solid state lighting. Nanowires are considered as building blocks for the next generation electronics and optoelectronics. In this talk, I will present the results on growth of nanowires, nanomembranes and microrings and their optical properties. Then I will discuss theoretical design and experimental results on optoelectronic devices. In particular I will discuss nanowire and micro-ring lasers and integration of nanowires and microrings. I will also present the results on
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Dissertations / Theses on the topic "Semiconductor lighting devices"

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Wang, Dongxue Michael. "Optoelectronic device simulation optical modeling for semiconductor optical amplifiers and solid state lighting /." Diss., Available online, Georgia Institute of Technology, 2006, 2006. http://etd.gatech.edu/theses/available/etd-03292006-132611/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2006.<br>Buck, John, Committee Co-Chair ; Ferguson, Ian, Committee Chair ; Krishnamurthy,Vikram, Committee Member ; Chang, Gee-Kung, Committee Member ; Callen, W. Russell Jr., Committee Member ; Summers, Christopher, Committee Member.
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Пархуць, Андрій Романович, та Andriі Parkhuts. "Перехідні процеси в електричних колах із світлодіодами". Master's thesis, Тернопільський національний технічний університет імені Івана Пулюя, кафедра електричної інженерії,Тернопіль, Україна, 2020. http://elartu.tntu.edu.ua/handle/lib/33479.

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В даний час спектр застосування світлодіодних джерел світла дуже широкий. Успіхи в розробці ефективних світлодіодів дозволили використовувати їх для цілей освітлення. Для підключення світлодіодів до стандартної електричної мережі 220/380 В необхідні пристрої стабілізації струму. Найбільш економічні стабілізатори струму для світлодіодів засновані на методі шпротному-імпульсної модуляції, при цьому всебічні дослідження імпульсного режиму живлення світлодіодів не проводилися. Результати наукових досліджень можуть бути використані при створенні пристроїв стабілізації струму світлодіодів. Використа
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Cozzarini, Luca. "Nanomaterials based on II-VI Semiconductors." Doctoral thesis, Università degli studi di Trieste, 2012. http://hdl.handle.net/10077/7359.

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2010/2011<br>This thesis describes: (i) synthesis and characterization of colloidal nanocrystals of II-VI semiconductor compounds; (II) development of two novel materials using such nanocrystals as “building blocks”: (IIa) a nanocrystals/polymer composite, to be used as phosphor in LED-based lighting devices; (IIb) an inorganic, nano-structured multiphase material, showing a promising geometry as an electronic intermediate band material. Different typologies of nanocrystals (single-phase, alloyed or core-shells) were successfully synthesized using air-stable, safe reagents. Their optical pr
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Books on the topic "Semiconductor lighting devices"

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Streubel, Klaus P. Light-emitting diodes: Materials, devices, and applications for solid state lighting XIV : 26-28 January 2010, San Francisco, California, United States. Edited by SPIE (Society). SPIE, 2010.

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Streubel, Klaus P., Heonsu Jeon, and Li-Wei Tu. Light-emitting diodes: Materials, devices, and applications for solids state lighting XIII : 27-29 January 2009, San Jose, California, United States. Edited by SPIE (Society), AIXTRON Inc, and OSRAM Opto-Semiconductors Inc. SPIE, 2009.

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3

F, Shahedipour-Sandvik, ed. Solid-state lighting materials and devices: Symposium held April 18-19, 2006, San Francisco, California, U.S.A. Materials Research Society, 2006.

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Streubel, Klaus P. Light-emitting diodes: Materials, devices, and applications for solids state lighting XV : 25-27 January 2011, San Francisco, California, United States. Edited by SPIE (Society) and OSRAM GmbH (München). SPIE, 2011.

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5

Streubel, Klaus P., Heonsu Jeon, Li-Wei Tu, and Norbert Linder. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI. SPIE, 2012.

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Jeon, Heonsu, Li-Wei Tu, and Klaus Streubel. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII. SPIE, 2013.

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Streubel, Klaus P., Heonsu Jeon, and Li-Wei Tu. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII. SPIE, 2014.

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8

O'Connor, Leo. Blue Lasers: Lighting Up New Markets in Displays, Optical Storage, Medical Devices, and More : A Report (Technical Insights, R-278). John Wiley & Sons Inc, 2000.

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Book chapters on the topic "Semiconductor lighting devices"

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Chi, Yu-Chieh, Dan-Hua Hsieh, Hao-chung (Henry) Kuo, Sujie Nakamura, Steve Denbaars, and Gong-Ru Lin. "Lighting Communications." In Handbook of GaN Semiconductor Materials and Devices. CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-21.

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Chi, Yu-Chieh, Dan-Hua Hsieh, Hao-chung Kuo, Sujie Nakamura, Steve Denbaars, and Gong-Ru Lin. "Lighting Communications." In Handbook of GaN Semiconductor Materials and Devices. CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-27.

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"Light-Emitting Diodes and Lighting." In Nitride Semiconductor Devices. Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527649006.ch7.

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Han, Jing-Tan, Lida Tan, Hui Su, and Chao-Jun Li. "Chemical transformations using GaN-based catalysts." In Catalysis. Royal Society of Chemistry, 2024. http://dx.doi.org/10.1039/bk9781837672035-00106.

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Gallium nitride (GaN), a wide bandgap III–V semiconductor, has been extensively applied in lighting, electronics, and radiofrequency devices over the last few decades. With the distinct properties of fast charge mobility, high stability, tunable wide bandgap, and ionicity structure, GaN-based catalysts have drawn considerable attention in chemical synthesis recently. In this chapter, the recent progress and critical breakthrough of GaN-based catalysis in synthesis are reviewed, with a focus on mechanistic understanding. The reactions are categorized as water splitting, direct methane activatio
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Martin, Mickael, Thierry Baron, Yann Bogumulowicz, et al. "GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications." In Post-Transition Metals [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94609.

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III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. Integration of III-V devices onto a Si CMOS platform is already in production using III-V devices transfer. A promising way consists in using hetero-epitaxy processes to grow the III-V materials directly on Si and at the right place. To reach this objective, some challenges still needed to be overcome. In this contribution, we will show how to overcome the different challenges associated to the heteroepitaxy and integration of III-As onto a silicon platform. We present solu
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Martin, Mickael, Thierry Baron, Yann Bogumulowicz, et al. "GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications." In Post-Transition Metals. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.94609.

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III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. Integration of III-V devices onto a Si CMOS platform is already in production using III-V devices transfer. A promising way consists in using hetero-epitaxy processes to grow the III-V materials directly on Si and at the right place. To reach this objective, some challenges still needed to be overcome. In this contribution, we will show how to overcome the different challenges associated to the heteroepitaxy and integration of III-As onto a silicon platform. We present solu
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Singh, Jyoti, Niteen P. Borane, and Rajamouli Boddula. "Milestone Developments and New Perspectives of Nano/Nanocrystal Light Emitting Diodes." In Light-Emitting Diodes - New Perspectives [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.108907.

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Light emitting diode (LED) is a one type of p/n junction semiconductor device which is used in less energy consumption for numerous lighting functions. Because of their high performance and long existence, their eye-catching application is getting increasing numbers in recent times. LEDs are nowadays defined as using the “ultimate light bulb”. In a previous couple of years, its efficiency has been multiplied through converting it to nano size. This new light-emitting has a nano-pixel structure and it affords high-resolution performance and the geometry of the pixel is cylindrical or conical fo
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Conference papers on the topic "Semiconductor lighting devices"

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Su, Hang, Li Zheng, Lingyan Shen, et al. "Curvature-Adaption Termination with for Wide-Bandgap Semiconductors Vertical Power Devices." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835262.

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Tan, Xiaolong, Guodong Wang, Yiyun Zhang, Xiaoyan Yi, Junxi Wang, and Jinmin Li. "Microchannel Flow Cooling for Gallium Oxide Devices." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835322.

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Chen, Zhiqiao, Qing Guo, Yiding Wu, et al. "Characterization Of Short-Circuit Failure Mode of Si/SiC Hybrid Devices." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835369.

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Gong, Shoulai, Fanpeng Zeng, Yingxin Cui, and Jisheng Han. "Effect of Dicing Mode on the Characteristics of Silicon Carbide Devices." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835274.

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Du, Wen-Zhang, Han-Zhao He, Wen-Qi Fan, et al. "6-Inch GaN/Si CMOS 1P2M Monolithic Heterogeneous Process and Platformed Devices." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835261.

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Zhang, Junran, Hanwen Jian, Qingchun J. Zhang, Guangyin Lei, and Pan Liu. "Optimizing Al Ion Implantation in Silicon Carbide Superjunction Devices: A Molecular Dynamics Approach." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835309.

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Zhu, Jijun, Hanlin Yang, Haoyu Wang, et al. "A Novel Monolithic Integration of Light-Emitting HEMT with InGaN Quantum Well Insertion Performing as Optoelectronic Devices." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835297.

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Que, Qianqian, Ce Wang, Yifan Wang, Mingquan Zeng, Hengyu Wang, and Kuang Sheng. "A Fast and Effective Design Method for Multi-Layer Floating Field Ring Optimization in SiC Floating Island Devices." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835303.

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Xu, Senyuan, Ying Wang, Yichao Wang, et al. "Analysis of the nFOM Value for GaN Power HEMT Device for Multi-Level Topology Applications." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835299.

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Zerong, Zhou, Lin Weiming, Yu Ling, Huang Daoyi, and Wu Yaping. "Research on an Active Soft-Switching Dual Boost PFC Circuit Using Silicon Carbide Power Device." In 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS). IEEE, 2024. https://doi.org/10.1109/sslchinaifws64644.2024.10835289.

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