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Journal articles on the topic 'Semiconductor lighting devices'

Author: Grafiati

Published: 28 May 2022

Last updated: 18 July 2025

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1

MUÑOZ, ELIAS. "SEMICONDUCTOR UV SOURCES AND DETECTORS: SOME NON-CONSUMER APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 421–28. http://dx.doi.org/10.1142/s0129156402001344.

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UV emitters and photodetectors based on wide band-gap semiconductors are being investigated and may soon become commercially available. Solid state lighting and information storage are two main applications in the consumer area for these new semiconductor devices. Presently, III-nitrides seem to be the most promising materials for such near UV semiconductor devices. In this work some non-consumer applications are indicated. Biophotonics appears to be a very promising area for such devices.

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2

Perkins, Jeff. "LED & HB-LED Packaging: Technology & Marketing Trends." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (2010): 001137–76. http://dx.doi.org/10.4071/2010dpc-keynote3_leds.

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If LED lighting is to fulfill the promise it holds across all lighting segments, costs need to drop significantly and production volumes will need to double several times over in the coming years. To achieve both, cost improvements must happen at every level of manufacturing and manufacturing processes must evolve. When talking about LED device costs today, packaging holds the greatest cost saving opportunities. As with many semiconductor devices and for LED devices in particular, wafer level packaging will be a key cost saving move for the future. Much needs to be done and much is being done

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Khramtsov, Igor A., and Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors." Materials 12, no. 12 (2019): 1972. http://dx.doi.org/10.3390/ma12121972.

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Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of accept

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Aygün, Sultanova Haji gizi, and Gahramanova Khazar gizi Didem. "THIRD GENERATION SEMICONDUCTORS." Deutsche internationale Zeitschrift für zeitgenössische Wissenschaft 97 (February 7, 2025): 42–44. https://doi.org/10.5281/zenodo.14832376.

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With the increasingly serious problems of environmental pollution and global warming, the research and application of renewable energy sources have attracted unprecedented attention. Among them, semiconductor technology, as an important tool for promoting green energy transformation, is attracting more and more attention from scientific research and industry. In particular, third-generation semiconductor materials are revolutionizing the field of renewable energy due to their superior physical properties and application prospects. With the rapid development of technology, third-generation

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Roldán-Carmona, Cristina, Takeo Akatsuka, Michele Sessolo, Scott E. Watkins, and Henk J. Bolink. "Engineering Charge Injection Interfaces in Hybrid Light-Emitting Electrochemical Cells." Applied Materials & Interfaces 6, no. 22 (2014): 19520–24. https://doi.org/10.1021/am506697t.

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Light-emitting electrochemical cells (LECs) consists of a thin film of an ionic organic semiconductor sandwiched between two electrodes. Because of the large density of ions, LECs are often reported to perform independently on the electrodes work function. Here we use metal oxides as charge injection layers and demonstrate that, although electroluminescence is observed independently of the electrodes used, the device performances are strongly dependent on the choice of the interface materials. Relying on metal oxide charge injection layers, such hybrid devices are of interest for real lighting

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Berencén, Y., Josep Carreras, O. Jambois, et al. "Metal-nitride-oxide-semiconductor light-emitting devices for general lighting." Optics Express 19, S3 (2011): A234. http://dx.doi.org/10.1364/oe.19.00a234.

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Wang, Yao, Xu Han, Linze Jin, et al. "Excitation Threshold Reduction Techniques for Organic Semiconductor Lasers: A Review." Coatings 13, no. 10 (2023): 1815. http://dx.doi.org/10.3390/coatings13101815.

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Organic semiconductor lasers have shown great application potential in various fields, such as low-cost sensing, high-performance lighting and display, and lab-on-a-chip devices. Since the introduction of organic lasers in the 1960s, research on semiconductor laser devices has expanded to include various materials and structures. The organic laser has attracted much attention due to its wide range of emission spectrum and simple synthesis and processing. Researchers constantly pursue the goal of using organic semiconductors to fabricate low-threshold thin-film organic laser devices while retai

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Chen, Hsueh-Shih. "(Invited) Recent Advancements in the Development of Semiconductor Quantum Dots for Solid-State Light Emitting Diodes and Photovoltaic Devices." ECS Meeting Abstracts MA2023-02, no. 34 (2023): 1667. http://dx.doi.org/10.1149/ma2023-02341667mtgabs.

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Semiconductor quantum dots (QDs) have emerged as a promising class of nanomaterials with diverse applications in areas such as lighting, displays, photo-detectors, and image sensing. The successful commercialization of QD-based displays, exemplified by QLED TVs, demonstrates the technology's market viability. Ongoing research on QD color down-converters for mini-LED and micro-LED technologies, as well as electroluminescent QD devices, holds considerable promise for advancing future lighting and display technologies. Additionally, QDs have exhibited potential in photovoltaic applications, inclu

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Zhang, Yuqian. "The Application of Third Generation Semiconductor in Power Industry." E3S Web of Conferences 198 (2020): 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.

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With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the thi

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Jagadish, Chennupati. "(Dielectric Science &Technology Thomas D. Callinan Award) Semiconductor Nanostructures for Optoelectronics and Energy Applications." ECS Meeting Abstracts MA2023-01, no. 20 (2023): 1503. http://dx.doi.org/10.1149/ma2023-01201503mtgabs.

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Semiconductors have played an important role in the development of information and communications technology, solar cells, solid state lighting. Nanowires are considered as building blocks for the next generation electronics and optoelectronics. In this talk, I will present the results on growth of nanowires, nanomembranes and microrings and their optical properties. Then I will discuss theoretical design and experimental results on optoelectronic devices. In particular I will discuss nanowire and micro-ring lasers and integration of nanowires and microrings. I will also present the results on

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11

Bourget, C. Michael. "An Introduction to Light-emitting Diodes." HortScience 43, no. 7 (2008): 1944–46. http://dx.doi.org/10.21273/hortsci.43.7.1944.

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Light-emitting diodes (LEDs) are semiconductor devices that produce noncoherent, narrow-spectrum light when forward voltage is applied. LEDs range in wavelength from the UVC band to infrared (IR) and are available in packages ranging from milliwatts to more than 10 W. The first LED was an IR-emitting device and was patented in 1961. In 1962, the first practical visible spectrum LED was developed. The first high-power (1-W) LEDs were developed in the late 1990s. LEDs create light through a semiconductor process rather than with a superheated element, ionized gas, or an arc discharge as in tradi

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Griffiths, A. D., J. Herrnsdorf, J. J. D. McKendry, M. J. Strain, and M. D. Dawson. "Gallium nitride micro-light-emitting diode structured light sources for multi-modal optical wireless communications systems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 378, no. 2169 (2020): 20190185. http://dx.doi.org/10.1098/rsta.2019.0185.

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Gallium nitride-based light-emitting diodes (LEDs) have revolutionized the lighting industry with their efficient generation of blue and green light. While broad-area (square millimetre) devices have become the dominant LED lighting technology, fabricating LEDs into micro-scale pixels (micro-LEDs) yields further advantages for optical wireless communications (OWC), and for the development of smart-lighting applications such as tracking and imaging. The smaller active areas of micro-LEDs result in high current density operation, providing high modulation bandwidths and increased optical power d

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Giebink, Noel. "Surface Cleaning Challenges for Organic Light Emitting Diodes." Solid State Phenomena 314 (February 2021): 3–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.3.

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Organic optoelectronic devices such as light-emitting diodes and solar cells present unique challenges for surface cleaning and preparation because of their large area and the ‘soft’, thin film nature of the materials involved. This paper gives an introduction to this class of semiconductor devices and covers a recent example of how surface cleaning impacts the long-term reliability of organic light-emitting diodes being commercialized for solid-state lighting.

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Olimov, Lutfiddin Omanovich, and Abdurashid Khamidillaevich Yusupov. "The Influence Of Semiconductor Leds On The Aquatic Environment And The Problems Of Developing Lighting Devices For Fish Industry Based On Them." American Journal of Applied sciences 03, no. 02 (2021): 119–25. http://dx.doi.org/10.37547/tajas/volume03issue02-14.

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The paper presents the results of an experimental study of the influence of semiconductor LEDs on the aqueous environment. It has been shown that the use of semiconductor LEDs in fish farming is the preferred source of optical radiation in the development of microorganisms in natural or open bodies of water, in particular, in the growth of functional systems as aquatic plants, fish and their larvae, as well as moderate development of zooplankton, phytoplankton, detritus, which are the natural feed base of fish and their larvae.

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Kuang, Hai, Shi An He, and Meng Xu. "The Research of LEDs with Metal Substrates." Applied Mechanics and Materials 727-728 (January 2015): 277–79. http://dx.doi.org/10.4028/www.scientific.net/amm.727-728.277.

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There are good thermal conductivity, high luminous efficiency in the LEDs with metal substrates, which can effectively solve the problems such as poor heat dissipation、poor reliability of LEDs. The copper substrate LEDs have successfully developed with good performance by SemiLEDs, which indicates the direction of the high-power semiconductor devices for lighting.

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Wook Park, Jin, Yeo Seo hyun, Ho Yun Soen, Seong Mi Park, Sung Jun Park, and Gwang Heon Kim. "Standalone solar streetlamp sharing an interactive buck-boost converter." International Journal of Engineering & Technology 7, no. 2.12 (2018): 296. http://dx.doi.org/10.14419/ijet.v7i2.12.11309.

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Background/Objectives: Typically, the stand-alone solar streetlight system is used independently of DC/DC converter for battery charging and for LED lighting control. Such an independent power conversion system uses a DC/DC converter with only a voltage raising or reducing function for cost reduction (power semiconductor, inductor, capacitor, etc.). However, these DC/DC converters have limitations on efficiency increase in all voltage ranges when controlling MPPT. In addition, DC/DC converters for LED lighting have limitations in the design of the lighting voltage because the LED lighting oper

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Erdem, Talha, and Hilmi Volkan Demir. "Color-Enrichment Semiconductor Nanocrystals for Biorhythm-Friendly Backlighting." Zeitschrift für Physikalische Chemie 232, no. 9-11 (2018): 1457–68. http://dx.doi.org/10.1515/zpch-2018-1134.

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Abstract Nanocrystals (NCs) offer great opportunities for developing novel light-emitting devices possessing superior properties such as high quality indoor lighting, efficient outdoor lighting, and display backlighting with increased color definition. The narrow-band emission spectra of these materials also offer opportunities to protect the human daily biological rhythm against the adverse effects of display backlighting. For this purpose, here we address this problem using color converting NCs and analyzed the effect of the NC integrated color converting light-emitting diode (NC LED) backli

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Bimberg, Dieter. "Semiconductor nanostructures for flying q-bits and green photonics." Nanophotonics 7, no. 7 (2018): 1245–57. http://dx.doi.org/10.1515/nanoph-2018-0021.

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AbstractBreakthroughs in nanomaterials and nanoscience enable the development of novel photonic devices and systems ranging from the automotive sector, quantum cryptography to metropolitan area and access networks. Geometrical architecture presents a design parameter of device properties. Self-organization at surfaces in strained heterostructures drives the formation of quantum dots (QDs). Embedding QDs in photonic and electronic devices enables novel functionalities, advanced energy efficient communication, cyber security, or lighting systems. The recombination of excitons shows twofold degen

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19

Hernandez Duran, Tania, Neel Ravela, Sandra Sanchez Rivero, Teresita De Jesus Castro Sandoval, Jos Hoogmartens, and Murali Pendela. "Evaluation of Different Light Conditions in the Working Environment for Handling Photosensitive and Thermolabile Compounds." Journal of AOAC INTERNATIONAL 98, no. 6 (2015): 1491–95. http://dx.doi.org/10.5740/jaoacint.15-035.

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Abstract Lighting in the working environment plays a significant role on the degree of degradation of photosensitive, thermolabile compounds and on working efficiency. Light emitting diodes (LEDs) are semiconductor light emitting devices that are promising artificial light sources with easy modulation of light wave signals and are also known for low heat generation. Therefore, the effect of polychromatic LED light was tested in the working environment using the drug compounds montelukast, nifedipine, and clavulanic acid, which are known to be photosensitive or thermolabile. As a control, other

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20

Karlicek, Robert F. "The Evolution of LED Packaging: New Approaches for Solid State Lighting." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (2012): 000738–55. http://dx.doi.org/10.4071/2012dpc-ta44.

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The rapid evolution of solid state lighting is driving rapid and innovative approaches to LED packaging. While the bulk of LEDs are still packaged using decades old technology, the cost and performance needs of solid state lighting are forcing the development of new light emitter packaging technology, some of it being imported from more conventional electronic packaging. Concepts like wafer level packaging, chip on flex technology and SIP technology are infiltrating the LED packaging landscape, but with innovations developing from the need to simultaneously manage input power, thermal dissipat

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21

Saddow, Stephen E., Christopher L. Frewin, Fabiola Araujo Cespedes, Marioa Gazziro, Evans Bernadin, and Sylvia Thomas. "SiC for Biomedical Applications." Materials Science Forum 858 (May 2016): 1010–14. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1010.

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Silicon carbide is a well-known wide-band gap semiconductor traditionally used in power electronics and solid-state lighting due to its extremely low intrinsic carrier concentration and high thermal conductivity. What is only recently being discovered is that it possesses excellent compatibility within the biological world. Since publication of the first edition of Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications five years ago [1], significant progress has been made on numerous research and development fronts. In this paper three ve

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22

Piwowarski, Karol, Witold Kaczmarek, Marek Suproniuk, Bogdan Perka, and Piotr Paziewski. "Modeling of Changes in the Resistivity of Semi Insulating Gallium Phosphide under the Influence of Lighting." Energies 16, no. 4 (2023): 1725. http://dx.doi.org/10.3390/en16041725.

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The article presents the results of a simulation of changes in gallium phosphide (GaP) resistivity under the influence of lighting. The adopted model of the defect structure is presented along with the defect parameters. Initial conditions created on the basis of a tested material sample, labeled GaP-1, made of monocrystals of semi-insulating gallium phosphide (SI GaP), are presented. The simulation methodology and the created model of the kinetics equations are described. As a result of the simulation, the values of the photocurrent and the electron-hole pair generation coefficient G were ass

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Umar, Muhammad Wasif, Norzaihar Yahaya, and Zuhairi Baharuddin. "PWM Dimming for High Brightness LED Based Automotive Lighting Applications." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 5 (2017): 2434. http://dx.doi.org/10.11591/ijece.v7i5.pp2434-2440.

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In recent years, the use of high brightness LEDs has become increasingly accepted as light sources in mainstream vehicles. However, they are semiconductor devices and their electrical characteristics are completely different to the traditional lamps. The output luminous flux of an LED is determined by the forward current running through it. Hence they cannot be powered directly from the automotive battery using the conventional driving techniques. They require specialised driving circuits which can respond to the changing needs of the LEDs as their electrical properties change, while maintaini

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Muhammad, Wasif Umar, B. Yahaya Norzaihar, and B. Baharuddin Zuhairi. "PWM Dimming Control for High Brightness LED Based Automotive Lighting Applications." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 5 (2017): 2434–40. https://doi.org/10.11591/ijece.v7i5.pp2434-2440.

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In recent years, the use of high brightness LEDs has become increasingly accepted as light sources in mainstream vehicles. However, LEDs are semiconductor devices having electrical characteristics completely different to the traditional lamps. The output luminous flux of an LED is determined by the forward current running through it. Therefore they cannot be powered directly from the automotive battery using the conventional driving techniques. They require specialized driving systems which can ensure the optimal flow of current through LEDs, while maintaining the required level of output lumi

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Lisovenko, V., D. Lisovenko, and O. Bazyk. "LED MODULE WITH ELECTRONIC ILLUMINATION CONTROL." Collection of scientific works of Odesa Military Academy 1, no. 12 (2019): 146–54. http://dx.doi.org/10.37129/2313-7509.2019.12.1.146-154.

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Many energy saving tasks can be solved thanks to the current advances in LED technology in the production of semiconductor light sources. Modern production of solid-state LEDs guarantees high-precision compliance with the calculated design parameters of illumination devices. This opens up wide opportunities for high-precision control of the lighting parameters of a multicomponent module: light power, a directional pattern and a distribution of illumination. Today, the methodical issues of the preliminary modeling of LED illumination devices with the given parameters are fundamentally solved. T

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Liu, Xingchen, Junhui Hu, Qijun Bian, et al. "Recent Advances in Optical Injection Locking for Visible Light Communication Applications." Photonics 10, no. 3 (2023): 291. http://dx.doi.org/10.3390/photonics10030291.

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The introduction of visible light communication (VLC) technology could increase the capacity of existing wireless communication systems towards 6G networks. In practice, VLC can make good use of lighting system infrastructures to transmit data using light fidelity (Li-Fi). The use of semiconductor light sources, including light-emitting diodes (LEDs) and laser diodes (LDs) are essential to VLC technology because these devices are energy-efficient and have long lifespans. To achieve high-speed VLC links, various technologies have been utilized, including injection locking. Optical injection loc

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Stolyarevskaya, Raisa I. "Review Of The Features Of Using Mini-spectroradiometers with Ccd-arrays In Applied Photometry." Light & Engineering, no. 01-2021 (February 2021): 21–29. http://dx.doi.org/10.33383/2020-049.

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The article is devoted to the peculiarities of solving problems of applied photometry based on the spectroradiometric approach using modern matrix spectrometers. The spectral distribution of the characteristics of the radiation source is an objective physical basis for determining its light and colour parameters. In this case, the photometric characteristics of lighting devices and lighting systems are calculated on the basis of tabulated spectral light efficiencies and ordinates of CIE colour-matching functions. The main reason for the shift in emphasis towards spectral measurements is due to

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Joshi, P. S. "Comparison of finite volume and one dimensional network methodologies for thermal management of lighting applications." Journal of Physics: Conference Series 2116, no. 1 (2021): 012022. http://dx.doi.org/10.1088/1742-6596/2116/1/012022.

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Abstract Signify is focused on building a state-of-the-art, innovative and sustainable solutions for industries, homes, buildings, and communities. In the last decade or so there has been a considerable shift from using traditional incandescent luminaires to highly efficient, cheaper, and robust LED (Light Emitting Diode) based lighting fixtures. LEDs are semiconductor devices and thus their life depends largely on operating temperatures. Thermal management of the lighting fixture, therefore, becomes crucial for the overall performance. Heat sinks are designed for given operating conditions fo

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Tournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel, and Dominique Planson. "Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications." Advanced Materials Research 324 (August 2011): 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.

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Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already comm

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Pekur, D. V., V. I. Kornaga, R. М. Korkishko, I. V. Pekur, and V. M. Sorokin. "Application of active diodes to enhance the efficiency and reliability of switching power supplies." Semiconductor Physics, Quantum Electronics and Optoelectronics 28, no. 01 (2025): 077–82. https://doi.org/10.15407/spqeo28.01.077.

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The paper deals with use of active (‘ideal’) diodes to improve the efficiency and reliability of switching power supplies. Traditional semiconductor diodes have significant energy losses due to forward voltage drop and reverse currents, which negatively affects the overall efficiency of systems, especially in low-voltage high-efficiency devices. Active diodes that use transistors and control circuitry enable achieving a low forward bias voltage drop and minimize reverse currents. Theoretical analysis and graphical dependences show significant reduction in power losses in rectifier elements usi

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Tsizh, B., and I. Margolych. "Aging and degradation of transparent copper iodide thin film electrodes for functional electronic devices." Scientific Messenger of LNU of Veterinary Medicine and Biotechnologies 26, no. 101 (2024): 91–96. http://dx.doi.org/10.32718/nvlvet-f10114.

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Transparent CuJ copper iodide thin-film electrodes are widely used in various optoelectronic devices, such as solar cells, electroluminescent displays, touch screens, multifunctional photoconverters, etc. Their advantages are high transparency, because CuJ absorbs light in a limited range of wavelengths, which allows them to transmit visible light, making them ideal for transparent devices, low cost, because copper iodide is an inexpensive material, making it economically viable for mass production, simplicity fabrication, as CuJ can be easily deposited on various substrates using simple film

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Górecki, Krzysztof, Przemysław Ptak, and Michał Gensikowski. "An Influence of Parameters of the Control Signal of Power LEDs on Their Junction Temperature and Emitted Light." Energies 16, no. 14 (2023): 5544. http://dx.doi.org/10.3390/en16145544.

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This article presents the method of implementation and the results of experimental investigations illustrating an influence of parameters of the signal controlling the current flowing through power LEDs on their junction temperature and on parameters characterizing the light emitted by them. The measurement system used and the tested power LEDs are described. The results of measurements of the junction temperature of the tested devices, the values of the average value of the power dissipated in the tested devices and the photometric and radiometric parameters of these devices obtained for diff

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Sánchez Vergara, María Elena, José Miguel Rocha Flores, Luis Alberto Cantera-Cantera, Ricardo Ballinas-Indilí, Alejandro Flores Huerta, and Cecilio Álvarez-Toledano. "Development of Composite Semiconductor Films Based on Organotin Complexes Doped with Cobalt Porphine for Applications in Organic Diodes." Materials 18, no. 1 (2024): 45. https://doi.org/10.3390/ma18010045.

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In this work, we present the green synthesis of complex A–E derived from β-hidroxymethylidene indanones by ultrasound, which allowed for the obtaining of compounds in a shorter time and with good yields. These organotin complexes were then doped with cobalt porphine and incorporated into a poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) matrix to manufacture composite semiconductor films. The semiconductor films were characterized through atomic force microscopy, examining their topography, Knoop hardness (around 17 HK), and tensile strength, which varied from 5 × 10−4 to 7 × 10−2 Pa

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Sireesha, Uppala, and Nikhil Deep Gupta. "Design and analysis of a group-III nitride superlattice structure based semiconductor laser diode for blue region emission." Laser Physics 33, no. 12 (2023): 125002. http://dx.doi.org/10.1088/1555-6611/ad06a3.

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Abstract The demand for high-power blue laser diodes (LDs) in the range above 2 W has been steadily increasing due to their applications in solid-state lighting, projection displays, high-density optical data storage and underwater communication. However, current designs face limitations in terms of achieving both high power output and efficiency. This work focuses on the design, development and numerical analysis of a blue LD utilizing group-III nitride superlattice structures. The present study aims to overcome design challenges by investigating the fundamental factors affecting the performa

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Brugnolotto, Enrico, Claudia Mezzalira, Fosca Conti, Danilo Pedron, and Raffaella Signorini. "Micro-Raman for Local Strain Evaluation of GaN LEDs and Si Chips Assembled on Cu Substrates." Micromachines 15, no. 1 (2023): 25. http://dx.doi.org/10.3390/mi15010025.

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Integrated circuits are created by interfacing different materials, semiconductors, and metals, which are appropriately deposited or grown on substrates and layers soldered together. Therefore, the characteristics of starting materials and process temperatures are of great importance, as they can induce residual strains in the final assembly. Identifying and quantifying strain becomes strategically important in optimizing processes to enhance the performance, duration, and reliability of final devices. This work analyzes the thermomechanical local strain of semiconductor materials used to real

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Jain, Aakash Kumar, Sushma Yadav, Meenal Mehra, Sameer Sapra, and Madhusudan Singh. "Solution-Processed Cubic GaN for Potential Lighting Applications." MRS Advances 4, no. 09 (2019): 567–74. http://dx.doi.org/10.1557/adv.2019.105.

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ABSTRACT:Cubic gallium nitride (GaN) is a wide bandgap semiconductor that exhibits a high crystallographic symmetry resulting in a lower inbuilt polarization which is useful for more efficient phosphor-free green light-emitting diodes. It has been grown using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), which produce highly ordered thin films on compatible substrates. In this work, we report the chemical synthesis of GaN using chemical metathesis reaction in diethyl ether with lithium nitride and anhydrous gallium chloride as precursors, inside a nitrogen g

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Winters, Jeffrey. "Efficiency is its Own Reward." Mechanical Engineering 128, no. 03 (2006): 33–35. http://dx.doi.org/10.1115/1.2006-mar-3.

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This article illustrates features of a state-of-the-art semiconductor factory called RFAB that Texas Instrument (TI) is building. When fully operational, the $3 billion fabrication plant will make TI's most advanced digital signal processors, destined for cell phones, disk drives, and anti-lock brakes. The white roof of the RFAB under construction in Richardson, Texas, reflects away some 85 percent of incoming sunlight, reducing cooling loads. Daylight reflected-off of window shelves in the administrative wing reduces the need for artificial lighting, while the Ergolights hanging from the ceil

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Mohammed, Ahmed F., Wasan R. Saleh, and Omar A. Ibrahim. "OLED Hybrid Light Emitting Devices with ZnS QDs, TPBi and Alq3 Electron Transport Layers." Nano Hybrids and Composites 21 (June 2018): 21–30. http://dx.doi.org/10.4028/www.scientific.net/nhc.21.21.

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Semiconductor quantum dots (QDs) have attracted tremendous attentions for their unique characteristics for solid-state lighting and thin-film display applications. A simple chemical method was used to synthesis quantum dots (QDs) of zinc sulfide (ZnS) with low cost. The XRD) shows cubic phase of the prepared ZnS with an average particles size of (3-29) nm. In UV-Vis. spectra observed a large blue shift over 38 nm. The band gaps energy (Eg) was 3.8 eV and 3.37eV from the absorption and photoluminescence (PL) respectively which larger than the Eg for bulk. QDs-LED hybrid devices were fabricated

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Pekur, D. V. "STATE OF THE ART AND PROSPECTS FOR THE EVOLUTION OF WHITE LEDS WITH NEAR NATURAL LIGHT EMISSION." Optoelektronìka ta napìvprovìdnikova tehnìka 58 (December 21, 2023): 16–20. http://dx.doi.org/10.15407/iopt.2023.58.016.

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Innovative technologies for the production of modern LEDs have allowed leading manufacturers (Seoul Semiconductor, Samsung, Cree) to develop their own ways of producing highly efficient white LEDs characterised by radiation parameters close to natural light. Modern LED light source development technologies have led to a sharp decrease in the use of white light guides with a colour rendering index in the range of 70-75, while the new most efficient LEDs have a colour rendering index of at least 80, and LEDs with a colour rendering index of more than 90 are becoming more widely used. LEDs with a

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Sánchez Vergara, María Elena, Emiliano Toledo Dircio, Luis Alberto Cantera Cantera, Lourdes Bazán-Diaz, and Roberto Salcedo. "Using Recycled Tetrapak and Doped Titanyl/Vanadyl Phthalocyanine to Make Solid-State Devices." Materials 17, no. 2 (2024): 309. http://dx.doi.org/10.3390/ma17020309.

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In this work we studied the semiconductor behavior of titanyl phthalocyanine (TiOPc) and vanadyl phthalocyanine (VOPc), doped with anthraflavic acid and deposited on Tetrapak/graphite as flexible electrodes. The molecular structure was approached using the density functional theory and astonishingly, it was found that the structure and electronic behavior can change depending on the metal in the phthalocyanine. Experimentally, the Root Mean Square was found to be 124 and 151 nm for the VOPc-Anthraflavine and TiOPc-Anthraflavine films, respectively, and the maximum stress was 8.58 MPa for the f

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Kovalenko, O. Yu, S. A. Mikaeva, and Yu A. Zhuravleva. "Research and development of pulse electronic control devices with UV lamps." Russian Technological Journal 10, no. 3 (2022): 103–10. http://dx.doi.org/10.32362/2500-316x-2022-10-3-103-110.

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Objectives. When used in lighting installations with tubular low-pressure ultraviolet (UV) lamps, electronic ballasts should meet the following basic requirements: low cost, reliable ignition at low temperatures, as well as combining high energy efficiency with reliable lamp operation. As compared with electromagnetic ballasts, electronic ballasts allow the luminous efficiency and power factor of discharge lamps to be increased, reducing the consumption of scarce materials along with the weight of devices. In order to improve their energy efficiency, complete UV lamps are based on low-pressure

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Forrest, Stephen R. "Waiting for Act 2: what lies beyond organic light-emitting diode (OLED) displays for organic electronics?" Nanophotonics 10, no. 1 (2020): 31–40. http://dx.doi.org/10.1515/nanoph-2020-0322.

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AbstractOrganic light-emitting diode (OLED) displays are now poised to be the dominant mobile display technology and are at the heart of the most attractive televisions and electronic tablets on the market today. But this begs the question: what is the next big opportunity that will be addressed by organic electronics? We attempt to answer this question based on the unique attributes of organic electronic devices: their efficient optical absorption and emission properties, their ability to be deposited on ultrathin foldable, moldable and bendable substrates, the diversity of function due to th

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Armakavicius, Nerijus, Philipp Kühne, Alexis Papamichail, et al. "Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect." Materials 17, no. 13 (2024): 3343. http://dx.doi.org/10.3390/ma17133343.

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Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, s

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LAI, JIAN HUANG, and PONG C. YUEN. "FACE AND EYE DETECTION FROM HEAD AND SHOULDER IMAGE ON MOBILE DEVICES." International Journal of Pattern Recognition and Artificial Intelligence 20, no. 07 (2006): 1053–75. http://dx.doi.org/10.1142/s0218001406005150.

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With the advance of semiconductor technology, the current mobile devices support multimodal input and multimedia output. In turn, human computer communication applications can be developed in mobile devices such as mobile phone and PDA. This paper addresses the research issues of face and eye detection on mobile devices. The major obstacles that we need to overcome are the relatively low processor speed, low storage memory and low image (CMOS senor) quality. To solve these problems, this paper proposes a novel and efficient method for face and eye detection. The proposed method is based on col

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Muthusamy, P., and J. Arivudainambi. "Evaluation of Solar Photovoltaic Cells using the DEMATEL Method." Renewable and Nonrenewable Energy 1, no. 2 (2022): 94–101. http://dx.doi.org/10.46632//rne/1/2/5.

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Solar Photovoltaic Cells. In PV cells, various semiconductor materials are employed. When a semiconductor is exposed to light, the light's energy is absorbed and transformed into electrons, which are negatively charged particles. The additional energy enables a current of electrons to go through the substance. A semiconductor used in photovoltaic cells absorbs photons released by the sun and converts them into an electron flow. Solar radiation is carried by elementary particles called photons at speeds of up to 300,000 km/s. A specialized electrical system called a photovoltaic system harnesse

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Strelnikov, V. P., and P. V. Strelnikov. "Defining the nomenclature of the spare parts sets and calculating the number of single sets of spare parts." Mathematical machines and systems 2 (2022): 83–90. http://dx.doi.org/10.34121/1028-9763-2022-2-83-90.

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To ensure a high degree of operational reliability of electronic equipment, as well as mainte-nance, repair, and extending the service life of the equipment, there is proposed a support sys-tem that includes diagnostic and repair tools, sets of spare parts, and considered spare parts de-sign taking into account the criteria of system reliability, i.e. composition and the number of spare parts which must ensure the functioning of systems with the necessary reliability indica-tors. The paper offers to use methods of calculating spare parts on the basis of more adequate models of reliability, whi

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Pekur, D. V., V. M. Sorokin, and Yu E. Nikolaenko. "Experimental study of a compact cooling system with heat pipes for powerful LED matrices." Технология и конструирование в электронной аппаратуре, no. 3-4 (2020): 35–41. http://dx.doi.org/10.15222/tkea2020.3-4.35.

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LED light sources, and powerful multichip light sources in particular, are currently widely used for lighting household and industrial premises. With an increase in power, the amount of heat increases as well, which leads to an increase in the temperature of semiconductor crystals and, accordingly, to a decrease in the reliability of LEDs and a change in their photometric characteristics. Therefore, when developing the design of LED lighting devices, special attention is paid to thermal management. Since the early 2000s, heat pipes have been widely used to efficiently remove heat from powerful

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Cheng, Chun-An, Ching-Min Lee, En-Chih Chang, Sheng-Hong Hou, Long-Fu Lan, and Cheng-Kuan Lin. "A Novel Integrated Electronic Lighting Driver Circuit for Supplying an LED Projection Lamp with High Power Factor and Soft Switching Characteristics." Electronics 12, no. 22 (2023): 4642. http://dx.doi.org/10.3390/electronics12224642.

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The traditional light source of projection lamps adopts a halogen lamp, which has the advantages of high brightness, but its luminous efficiency is not good and consumes energy. A light-emitting diode (LED) has the characteristics of high luminous efficiency and energy savings and can be used as a new light source for projection lamps. The conventional two-stage electronic lighting driver circuit for supplying an LED projection lamp is composed of an AC-DC converter with power factor correction (PFC) as the first stage and a DC-DC converter for providing rated lamp voltage and current as the s

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Su, Jian Xiu, Xue Ming Zhang, Su Fang Fu, Song Zhan Fan, and Zhen Ling Liu. "Study on Fixed-Abrasive Lapping SiC Crystal Substrate Based on Diamond Particle." Advanced Materials Research 1017 (September 2014): 520–25. http://dx.doi.org/10.4028/www.scientific.net/amr.1017.520.

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Silicon carbide substrate has been widely used in semiconductor lighting (LED), integrated circuit and microelectronic, optoelectronic devices. According to the former study, a series of the fixed abrasive lapping platen has been developed. The material removal rate (MRR), surface roughness and surface flatness of lapping SiC single crystal substrate (0001) C surface are studied using fixed abrasive lapping. Compared with the results of the free abrasive lapping, the surface flatness of SiC single crystal substrate (0001) C surface after lapping with the fixed abrasive lapping is better than t

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Barmada, Sami, Alessandro Formisano, Jesus C. Hernandez, Francisco José J. Sánchez Sutil, and Carlo Petrarca. "Impact of nearby lightning on photovoltaic modules converters." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 41, no. 2 (2021): 628–43. http://dx.doi.org/10.1108/compel-06-2021-0209.

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Purpose The lightning phenomenon is one of the main threats in photovoltaic (PV) applications. Suitable protection systems avoid major damages from direct strikes but also nearby strikes may induce overvoltage transients in the module itself and in the power conditioning circuitry, which can permanently damage the system. The effects on the PV system sensibly depend on the converter topology and on the adopted power switch. In the present study, a comparative analysis of the transient response due to a nearby lightning strike (LS) is carried out for three PV systems, each equipped with a diffe

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