Relevant bibliographies by topics / Semiconductor metrology

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Semiconductor metrology'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Semiconductor metrology"

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Michel, P. "Metrology systems for semiconductor industry." Nanoindustry Russia 73, no. 3 (2017): 18–20. http://dx.doi.org/10.22184/1993-8578.2017.73.3.18.20.

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Corle, Timothy R. "Submicron metrology in the semiconductor industry." Solid-State Electronics 35, no. 3 (March 1992): 391–402. http://dx.doi.org/10.1016/0038-1101(92)90243-6.

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Liang, Wei, Vladimir S. Ilchenko, Danny Eliyahu, Elijah Dale, Anatoliy A. Savchenkov, David Seidel, Andrey B. Matsko, and Lute Maleki. "Compact stabilized semiconductor laser for frequency metrology." Applied Optics 54, no. 11 (April 8, 2015): 3353. http://dx.doi.org/10.1364/ao.54.003353.

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Bowen, Keith, and Paul Ryan. "X-Ray Metrology for the Semiconductor Industry." ECS Transactions 11, no. 3 (December 19, 2019): 257–71. http://dx.doi.org/10.1149/1.2778669.

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Kang, Pilsung, Hyoung-joo Lee, Sungzoon Cho, Dongil Kim, Jinwoo Park, Chan-Kyoo Park, and Seungyong Doh. "A virtual metrology system for semiconductor manufacturing." Expert Systems with Applications 36, no. 10 (December 2009): 12554–61. http://dx.doi.org/10.1016/j.eswa.2009.05.053.

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Radamson, Henry H., Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, et al. "State of the Art and Future Perspectives in Advanced CMOS Technology." Nanomaterials 10, no. 8 (August 7, 2020): 1555. http://dx.doi.org/10.3390/nano10081555.

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.
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Hoga, Morihisa. "Metrology using laser in lithography of semiconductor industry." Review of Laser Engineering 27, Supplement (1999): 104–5. http://dx.doi.org/10.2184/lsj.27.supplement_104.

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Sederberg, Shawn, Fanqi Kong, Felix Hufnagel, Chunmei Zhang, Ebrahim Karimi, and Paul B. Corkum. "Vectorized optoelectronic control and metrology in a semiconductor." Nature Photonics 14, no. 11 (September 14, 2020): 680–85. http://dx.doi.org/10.1038/s41566-020-0690-1.

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Barnes, B. M., R. Attota, R. Quintanilha, Y.-J. Sohn, and R. M. Silver. "Characterizing a scatterfield optical platform for semiconductor metrology." Measurement Science and Technology 22, no. 2 (December 21, 2010): 024003. http://dx.doi.org/10.1088/0957-0233/22/2/024003.

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Richter, Curt A., Hao D. Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M. Stanford, Woong-Ki Hong, Takhee Lee, Dimitris E. Ioannou, and Qiliang Li. "Metrology for the Electrical Characterization of Semiconductor Nanowires." IEEE Transactions on Electron Devices 55, no. 11 (November 2008): 3086–95. http://dx.doi.org/10.1109/ted.2008.2005394.

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Dissertations / Theses on the topic "Semiconductor metrology"

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Farner, William Robert. "On-chip probe metrology /." Online version of thesis, 2008. http://hdl.handle.net/1850/6207.

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Sendon, Perez Juan Alejandro. "Risk minimization through metrology in semiconductor manufacturing." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEM022.

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Cette thèse consiste à analyser les différentes propriétés des ateliers de métrologie, proposer de nouvelles approches pour optimiser les taux d'échantillonnage et développer de nouvelles stratégies dynamiques de réduction des risques en fabrication des semi-conducteurs.Une analyse approfondie des ateliers de métrologie sur le site de Rousset de STMicroelectronics a été réalisée. Leurs propriétés physiques ainsi que leurs caractéristiques, comme la qualification des mesures, les stratégies d'échantillonnage et d’ordonnancement des lots et les niveaux de risque, sont prises en compte. De plus, une nouvelle procédure a été développée pour aider à déterminer quelle stratégie d'échantillonnage convient le mieux aux caractéristiques de l’atelier de métrologie et aux valeurs de risque.De nouvelles approches sont ensuite proposées pour optimiser les taux d'échantillonnage des différents types de machines de métrologie en respectant la capacité de métrologie et en prenant en compte des paramètres tels que les débits des machines de production et de métrologie et les probabilités de défaillance des machines de production. Les résultats montrent que la capacité de métrologie est mieux utilisée et que les machines de production sont contrôlées de manière efficace, en fonction de leurs caractéristiques, avec une priorité plus forte sur les machines critiques.Dans la dernière partie de la thèse, des modèles de simulation de plusieurs ateliers de métrologie sont développés. Ces modèles reproduisent le comportement des ateliers pour mieux les comprendre et évaluer l'impact d’améliorations qui sont proposées
This thesis consists in analyzing the different properties of metrology workshops, proposing novel approaches to optimize sampling rates and developing new dynamic strategies for risk reduction in semiconductor manufacturing.A thorough analysis of metrology workshops in the site of Rousset of STMicroelectronics has been carried out. Their physical properties and also their characteristics, such as measure qualification, lot sampling and dispatching strategy and risk levels, are considered. Also, a new procedure is developed that helps to determine which sampling strategy fits better according to the metrology workshop characteristics and risk values.New approaches are then proposed to optimize the sampling rates for different types of metrology tools respecting the metrology capacity and taking into account parameters such as throughput rates of process machines and metrology tools, and the failure probabilities of process machines. The numerical experiments show that the metrology capacity is better used and process machines are efficiently controlled, depending on their characteristics, paying more attention the critical machines.In the final part of the thesis, simulation models of several metrology workshops are developed. These models reproduce the behaviour of the workshops to better understand them and to evaluate the impact of proposed improvements
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Cockerton, Simon. "High resolution double crystal X-ray diffractometry and topography of III-V semiconductor compounds." Thesis, Durham University, 1991. http://etheses.dur.ac.uk/6278/.

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Double crystal diffractometry and topography are now routinely used in many laboratories for the inspection of epitaxially grown devices. However the trend towards thinner layers and more complex structures requires the continued development of novel approaches using these techniques. This thesis is concerned with the development of these approaches to study the structural uniformity of semiconductor materials. The uniformity of large single crystals of lithium niobate has been studied using synchrotron radiation and double crystal X-ray topography. This study has shown a variety of contrast features including low angle grain boundaries and non-uniform dislocation densities. The abruptness of an interface between a layer and the underlying substrate has been studied using glancing incidence asymmetric reflections. Comparisons to simulated structures revealed that a closer match was achieved by the inclusion of a highly mismatched interfacial layer. This study illustrates the need for careful comparison between experimental and simulated rocking curves as different structures may produce very similar rocking curves. A double crystal topographic study of a AlGaAs laser structure revealed X-ray interference fringes. These are shown to be produced from the interaction of two simultaneously diffracting layers separated by a thin layer. Possible formation mechanisms have been discussed showing that these fringes are capable of revealing changes in the active layer at the atomic level. A novel approach has also been developed using synchrotron radiation to study the non-stoichiometry of GaAs. This approach uses the quasi-forbidden reflections which are present in III-V semiconductors due to the differences in the atomic scattering factors. This study has also discussed the behaviour of strong and weak reflections in the region of absorption edges and modelled their behaviour using the anomalous dispersion corrections of Cromer and Liberman.
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Choi, Sukwon. "Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/49108.

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The development of state-of-the-art AlGaN/GaN high electron mobility transistors (HEMTs) has shown much promise for advancing future RF and microwave communication systems. These revolutionary devices demonstrate great potential and superior performance and many commercial companies have demonstrated excellent reliability results based on multiple temperature accelerated stress testing. However, a physical understanding of the various reliability limiting mechanisms is lacking and the role and relative contribution of the various intrinsic material factors, such as physical stress and strain has not been clearly explained in the literature. Part of issues that impact device reliability are the mechanical stresses induced in the devices as well as the self-heating that also limit device performance. Thus, quantification of stress and temperature in AlGaN/GaN HEMTs is of great importance. To address some of the needs for metrology to quantify stress in AlGaN/GaN HEMTs, micro-Raman spectroscopy and micro-photoluminescence (micro-PL) were utilized to quantify the residual stress in these devices. Through the use of micro-Raman and micro-PL optical characterization methods, mapping of the vertical and lateral stress distributions in the device channels was performed. Results show that stress can be influenced by the substrate material as well as patterned structures including metal electrodes and passivation layers. Previously developed and reported micro-Raman thermometry methods require an extensive calibration process for each device investigated. To improve the implementation of micro-Raman thermometry, a method was developed which offers both experimental simplicity and high accuracy in temperature results utilizing a universal calibration method that can be applied to a broad range of GaN based devices. This eliminates the need for performing calibration on different devices. By utilizing this technique, it was revealed that under identical power dissipation levels, the bias conditions (combination of Vgs and Vds) alter the heat generation profile across the conductive channel and thus influence the degree of device peak temperature. The role of stress in the degradation of AlGaN/GaN HEMTs was also explored. A combined analysis using micro-Raman spectroscopy, coupled electro-thermo-mechanical simulation, and electrical step stress tests was conducted to investigate the link between performance degradation and the evolution of total stress in devices. It was found that in addition to stresses arising from the inverse piezoelectric effect, the substrate induced residual stress and the operational themo-elastic stress in the AlGaN layer play a major role in determining the onset of mechanically driven device degradation. Overall, these experiments were the first to suggest that a critical level of stress may exist at which point device degradation will start to occur. The optical characterization methods developed in this study show the ability to reveal unprecedented relationships between temperature/stress and device performance/reliability. They can be used as effective tools for facilitating improvement of the reliability of future AlGaN/GaN HEMTs.
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Batista, Pessoa Walter. "Probing chalcogenide films by advanced X-ray metrology for the semiconductor industry." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS330/document.

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Les nouveaux matériaux de type chalcogénures (à base de S, Se, Te) font l’objet d’un intérêt croissant, non seulement pour les applications mémoires avancées, photonique et photovoltaïque, mais également autour des matériaux dichalcogénures innovants à base de métaux de transition (MoS₂, WS₂, ..). Les propriétés de ces matériaux, réalisés sous forme d’alliages binaires ou ternaires, avec ou sans dopage, dépendent fortement de leur composition, du profil de composition dans ces couches très fines, ainsi que des conditions de surface et d’interface (préparation, passivation). La maîtrise des propriétés de ces couches fines, déposées par voie chimique (CVD) ou par co-pulvérisation cathodique magnétron, doit s’appuyer sur des nouveaux protocoles de caractérisation aux incertitudes optimisées et compatibles avec un contrôle de fabrication en ligne. Dans cette thèse, nous présentons les performances de protocoles de métrologie spécifiquement développés pour l’analyse de couches minces de chalcogénures. Ces protocoles, qui s’appuient essentiellement sur les techniques non destructives de spectroscopie de photoélectrons (XPS) et de fluorescence X (XRF), ont été optimisés pour la caractérisation surfacique des couches ultrafines, l’analyse quantitative de la composition des matériaux complexes à base de tellure ou de soufre, et la mesure du profil de composition dans des couches et empilements < 50 nm. Dans un premier temps, nous présentons l’étude par XPS quasi in situ des propriétés de surface des matériaux Ge, Sb, Te ainsi que de leurs composés binaires et ternaires. Nous mettons en évidence l’évolution de la surface après remise à l’air puis vieillissement, et nous comparons l’efficacité de stratégies d’encapsulation in situ de couches minces à base de Te et Se. Nous démontrons ensuite les performances de protocoles d’analyses par XRF à dispersion de longueur d’onde (WDXRF) et XPS pour la quantification précise de la composition chimique de composés Ge-Sb-Te (de 1 à 200 nm) et de couches ultrafines de dichalcogénures à base de métaux de transition (MoS₂, WS₂). L’analyse combinée WDXRF/XPS permet de mesurer l’évolution avec la composition des facteurs de sensibilité relative des composantes Ge3d, Te4d et Sb4d, et par conséquent d’améliorer la précision de mesure par XPS de la composition des matériaux à changement de phase de type GexSbyTez. Nous soulignons également l’influence des effets de matrice sur la capacité de la WDXRF à l’analyse quantitative de l’azote dans des matériaux Ge-Sb-Te. Nous évaluons la possibilité d’un étalonnage de la WDXRF fondé sur des analyses par faisceaux d’ions spécifiques, ce qui permet in fine un suivi en ligne de couches GeSbTeN dans une fenêtre procédé donnée. Enfin, nous présentons deux stratégies de caractérisation non destructive du profil de composition dans des couches minces de chalcogénures. D’une part, nous démontrons que la combinaison des techniques de XRF en géométrie d'incidence rasante (GIXRF) et de réflectométrie X (XRR) permet une mise en évidence non ambiguë de faibles variations dans les procédés de dépôts, voire de phénomènes de diffusion dans des empilements de 10 nm d'épaisseur. L'utilisation de substrats multicouches en lieu et place du silicium permet d’optimiser la distribution en profondeur du champ d'ondes stationnaires, ce qui conduit à une amélioration nette de la sensibilité des stratégies XRR / GIXRF. D’autre part, nous montrons l’adéquation de protocoles fondés sur l’analyse XPS résolue en angle pour la caractérisation du profil de composition dans des couches nanométriques de GeTe et Ge₂Sb₂Te₅, ce qui permet une étude fine des premières étapes de dépôt de ces matériaux
Chalcogenide materials are compounds based on S, Se, and Te elements from group VI of the periodic table. They are receiving an extensive interest not only for applications in resistive memories (PCRAM and CBRAM), photonics and photovoltaics but also in the development of new 2-D materials (e.g. spintronics applications). Chalcogenide materials are already present in the semiconductor roadmaps and it is already replacing flash memories (e.g. phase change material and ovonic threshold switch in new random access memory). For the next technology nodes, chalcogenide properties can be scaled by tuning the chemical composition or by reducing the film thickness. Nonetheless, it also means that their properties become more tightly influenced by the chemical composition, the surface/interface effects and the depth-profile composition. Hence, dedicated metrology protocols must be developed, first to assist the optimization of chalcogenide materials processes in cleanroom environment, then to allow non-destructive process monitoring with industry-driven uncertainties. In this PhD thesis, we developed metrology protocols based on X-ray techniques, dedicated to thin chalcogenides materials and fully compatible with inline monitoring. First, we used quasi in-situ X-ray Photoelectron Spectroscopy (XPS) to characterize the surface of Ge, Sb, Te thin materials and compounds, and to study the composition-dependent evolution of the surface after air break and ageing. The efficiency of in situ capping strategies to protect Te-based and Se-based thin layered materials from ageing was also investigated. Secondly, we demonstrated the ability of improved metrology strategies based on in-line Wavelength Dispersive X-ray Fluorescence (WDXRF) and XPS to accurately quantify the chemical composition of Ge-Sb-Te compounds (from 1 to 200 nm) and ultrathin 2D transition metal dichalcogenides (MoS₂, WS₂). Combined WDXRF/XPS analysis was used to determine refined values of composition-dependent relative sensitivity factors for Te4d, Sb4d and Ge3d that allow for XPS-based metrology of PCRAM materials with mastered accuracy. We pointed the need for in-depth study of the significant matrix effects that alter the ability of WDXRF to quantify Nitrogen in Ge-Sb-Te materials: ion beam analysis was carefully investigated as possible input for WDXRF calibration, and a WDXRF protocol was established for inline monitoring of N-doped Ge-Sb-Te films in a specific process window. Finally, we investigated two ways to non-destructively characterize the in-depth chemical distribution in thin chalcogenide films: we demonstrated that the combination of XRF in grazing incidence geometry (GIXRF) and X-ray reflectometry (XRR) was able to unambiguously reveal small process differences along with process-induced diffusion in 10 nm-thick stackings. We showed that the use of multilayered substrate instead of silicon allowed fine-tuning of the depth-dependent X-ray standing wave field, resulting in improved sensitivity of XRR/GIXRF strategies. We also developed an angle-resolved XPS protocol for the evaluation of the first deposition steps of GeTe and Ge₂Sb₂Te₅ films, revealing the process-dependent elemental distribution as a function of the film growth. Therefore, in this work we not only elaborated advanced metrology protocols for the development of new chalcogenide films but also metrological solutions for the next technology nodes (28 nm and below), since current in-line metrology tools reach their detection limits
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Yan, Jun. "Metrology and Characterization of Impurity Transport During Cleaning of Micro and Nano Structures." Diss., The University of Arizona, 2006. http://hdl.handle.net/10150/195231.

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A major challenge in the manufacturing of micro and nano devices is the cleaning, rinsing, and drying of very small structures. Without a technology for in situ and real-time monitoring and controlling, the rinse processes that account for a significant fraction of the total processing steps use a large amount of water and energy perhaps unnecessarily. This "blind" processing approach leads to waste that can have significant economic and environmental impacts. An electrochemical residue sensor (ECRS) has been developed and is aimed at in situ and real-time measurement of residual contamination inside the micro and nano structures. Using this technology, the mechanisms and bottlenecks of cleaning, rinsing, and drying can be investigated and the processes can be monitored and controlled.An equivalent circuit model was developed to assist the design of the sensor; its validity was proved by the first prototype. The simulation results and the experimental data predicted a good sensitivity in a wide range of operational frequency. To use the sensor in a practical rinse tank setup, the sensor-on-wafer prototype was designed and fabricated. Both the fab-scale and the lab-scale tests were performed and results illustrated many successes. The sensor is the first and the only available technology that provides the in situ and real-time cleanness information in the microstructures during the rinse processes. The sensor results distinguished four different types of rinse processes and showed high sensitivity to the ionic concentration change in the microstructures. The impacts of cleaning and rinsing parameters such as flow rate, temperature, cleaning solution concentrations, and process time on the sulfuric acid rinsing efficiency were investigated by using the sensor. The investigation discovered that sulfuric acid rinsing is a two-stage process: a flow-control stage and a desorption-control stage. A comprehensive rinse model was developed to correlate the transport process and the trench impedance that is the sensor's signal. This model combined with the experimental data proved that increasing flow rate in the overflow rinse has a low efficiency for the rinse processes controlled by the surface reactions. The model, for the first time, shows the dynamics of the charging of the silicon dioxide surface and the dynamics of the potential build-up in the solution. It also discovered that the cation rinsing is a challenge if the cation adsorbs on or reacts with the surface.
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Pflüger, Mika. "Using Grazing Incidence Small-Angle X-Ray Scattering (GISAXS) for Semiconductor Nanometrology and Defect Quantification." Doctoral thesis, Humboldt-Universität zu Berlin, 2020. http://dx.doi.org/10.18452/22207.

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Hintergrund: Die Entwicklung von Nanotechnologien und insbesondere integrierten Schaltkreisen beruht auf dem Verständnis von Struktur und Funktion auf der Nanoskala, wofür exakte Messungen erforderlich sind. Kleinwinkel-Röntgenstreuung unter streifendem Einfall (GISAXS) ist eine Methode zur schnellen, berührungs- und zerstörungsfreien dimensionellen Messung von nanostrukturierten Oberflächen. Ziele: Es soll die Möglichkeit untersucht werden, die zunehmend komplexeren Proben aus Wissenschaft und Industrie mit Hilfe von GISAXS präzise zu vermessen. Ein weiteres Ziel ist es, Messtargets aus der Halbleiter-Qualitätskontrolle mit einer Größe von ca. 40x40 µm² zu messen, deren Signal typischerweise nicht zugänglich ist, weil ein Bereich von ca. 1x20 mm² auf einmal beleuchtet wird. Methoden: Synchrotron-basierte GISAXS-Messungen verschiedener Proben werden mit Hilfe einer Fourier-Konstruktion, der "distorted wave Born approximation" und einem Maxwell-Gleichungs-Löser basierend auf finiten Elementen analysiert. Ergebnisse: Aus GISAXS-Messungen kann die Linienform von Gittern mit einer Periode von 32 nm rekonstruiert werden und sie weicht weniger als 2 nm von Referenzmessungen ab. Eine sorgfältige Bayes'sche Unsicherheitsanalyse zeigt jedoch, dass wichtige dimensionelle Parameter innerhalb der Unsicherheiten nicht übereinstimmen. Für die Messung von kleinen Gittertargets entwerfe ich ein neuartiges Probendesign, bei dem das Target in Bezug auf die umgebenden Strukturen gedreht wird, und stelle fest, dass dadurch parasitäre Streuung effizient unterdrückt wird. Fazit: GISAXS-Messungen von komplexen Nanostrukturen und kleinen Targets sind möglich, jedoch würde GISAXS enorm von effizienteren Simulationsmethoden profitieren, die alle relevanten Effekte wie Rauhigkeit und Randeffekte einbeziehen. Hier gibt es vielversprechende theoretische Ansätze, so dass GISAXS eine zusätzliche Methode für die Halbleiter-Qualitätskontrolle werden könnte.
Background. The development of nanotechnology such as integrated circuits relies on an understanding of structure and function at the nanoscale, for which reliable and exact measurements are needed. Grazing-incidence small angle X-ray scattering (GISAXS) is a versatile method for the fast, contactless and destruction-free measurement of sizes and shapes of nanostructures on surfaces. Aims. A goal of this work is to investigate the possibility of precisely measuring the increasingly complex samples produced in science and industry using GISAXS. A second objective is to measure targets used in semiconductor quality control with a size of approx. 40x40 µm², whose signal is typically not accessible because an area of approx. 1x20 mm² is illuminated at once. Methods. I take synchrotron-based GISAXS measurements and analyze them using reciprocal space construction, the distorted wave born approximation, and a solver for Maxwell's equations based on finite elements. Results. I find that the line shape of gratings with a period of 32 nm can be reconstructed from GISAXS measurements and the results deviate less than 2 nm from reference measurements; however, a careful Bayesian uncertainty analysis shows that key dimensional parameters do not agree within the uncertainties. For the measurement of small grating targets, I create a novel sample design where the target is rotated with respect to the surrounding structures and find that this efficiently suppresses parasitic scattering. Conclusions. I show that GISAXS measurements of complex nanostructures and small targets are possible, and I highlight that further development of GISAXS would benefit tremendously from efficient simulation methods which describe all relevant effects such as roughness and edge effects. Promising theoretical approaches exist, so that GISAXS has the potential to become an additional method in the toolkit of semiconductor quality control.
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Lakcher, Amine. "Nouvelles perspectives de métrologie dimensionnelle par imagerie de microscope électronique pour le contrôle de la variabilité des procédés de fabrication des circuits intégrés." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT052/document.

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Dans les noeuds technologiques avancés ainsi que les technologies dérivées, des règles de dessin de plus en plus aggressives sont nécessaires. Cela conduit à une complexification des structures dans les circuits intégrés actuels. De telles structures posent un défi important aux procédés de fabrication, notamment les étapes dites de patterning que sont la lithographie et la gravure. Afin d'améliorer et d'optimiser ces structures, les designers se basent sur les règles et connaissances qu’ont les ingénieurs de leurs procédés. Ces règles ont besoin d'être alimentées par des informations dimensionnelles et structurelles de plus en plus complexes : configurations de type bord arrondi, distance entre deux bouts de lignes, rétrecissement de ligne, etc. La métrologie doit évoluer afin que les ingénieurs soient capables de mesurer et quantifier les dimensions des structures les plus complexes dans le but d'estimer la variabilité de leur procédé. Actuellement la variabilité est principalement estimée à partir de données issues du suivi en ligne de structures simples car elles sont les seules à garantir une mesure robuste et reproductible. Mais, elles peuvent difficilement être considérées comme représentatives du procédé ou du circuit. Utiliser la métrologie par CD-SEM pour mesurer des structures complexes de manière robuste est un défi technique. La création de recettes de mesures est complexe, nécessite un temps non négligeable et ne garantit pas une mesure stable. Cependant, une quantité importante d'informations est contenue dans l'image SEM. Les outils d'analyses fournis par les équipementiers permettent aujourd'hui d'extraire les contours SEM d'une structure présente dans l’image. Ainsi, le CD-SEM prend des images et la partie métrologie est réalisée hors ligne afin d'estimer la variabilité. Cette thèse vise à proposer aux ingénieurs de nouvelles possibilités de métrologie dimensionnelle afin de l’appliquer pour le contrôle des structures les plus complexes. Les contours SEM sont utilisés comme source d’information et exploités pour générer de nouvelles métriques
In advanced technological nodes as well as derived technologies, aggressive design rules are needed. This leads to a complexity of structures in the current integrated circuits. Such structures pose a significant challenge to chip manufacturing processes, in particular patterning steps of lithography and etching. In order to improve and optimize these structures, designers need to rely on the rules and knowledge that engineers have about their processes. These rules need to be fed by complex dimensional and structural information: corner rounding, tip to tip distances, line end shortening, etc. Metrology must evolve so that engineers are able to measure and quantify the dimensions of the most complex structures in order to assess the process variability. Currently the variability is mainly quantified using data from the inline monitoring of simple structures as they are the only ones to guarantee a robust and reproducible measurement. But, they can hardly be considered as representative of the process or the circuit. Using CD-SEM metrology to measure complex structures in a robust way is a technical challenge. The creation of measurement recipes is complex, time consuming and does not guarantee a stable measurement. However, a significant amount of information is contained in the SEM image. The analysis tools provided by the equipment manufacturers allow to extract the SEM contours of a structure present in the image. Thus, the CD-SEM takes images and the metrology part is performed offline to estimate the variability.This thesis offers engineers new possibilities of dimensional metrology in order to apply it for process control of complex structures. SEM contours are used as a source of information and used to generate new metrics
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Atiquzzaman, Fnu. "Chemical Mechanical Planarization of Electronic Materials." Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4280.

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In the modern semiconductor manufacturing processes, chemical mechanical planarization (CMP) has attained important processing step because of its ability to provide global planarization. CMP is the planarization technique which is used for the removal of excess material, as left over from the previous processing steps. In addition, CMP offers a uniform surface that is essential for subsequent processing steps, especially for the high resolution photolithography processes. In simpler notation, CMP is a process where a chemical reaction enhances in obtaining a planar surface through removal of the mechanical materials from a wafer. In this study, CMP performance of three electronic materials was investigated. Chemical vapor deposited (CVD) diamond films, as a first materials, was fabricated using hot-filament chemical vapor deposition technique (HFCVD). The synthesized microcrystalline diamond (MCD) films were characterized using Raman Spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray Diffraction (XRD). The CMP performance of the MCD and nanocrystalline diamond (NCD) synthesized in Nano Materials Research Laboratory (NMRL) were investigated by using commercial slurry procured by Logitech Inc. U.K. The post-CMP characterizations of diamond films were performed by AFM in order to investigate surface roughness. The result showed the significant reduction the surface roughness of MCD films (37 nm to 15 nm) and NCD films (18 nm to 12 nm). In addition, the CMP performance of the silicon dioxide was investigated in this research work. The novel nanodiamond-polymer based slurry was also developed by co-polymerization of N-isopropylacrylamide (NIPAM) and N,N'-methylenebisacrylamide, 3-(trimethoxysilyl) propyl methacrylate (MPS). The synthesized slurry was characterized by Transmission Electron Microscopy (TEM) for observing the dispersion of diamond particles in the polymer matrix. The investigation of silicon dioxide was carried out using conventional ceria based slurry and novel nanodiamond-polymer based slurry. The results showed excellent surface finish at the minor expense of material removal rate with nanodiamond-polymer based slurry. Also, the coefficient of friction of friction was significantly reduced by using novel nanodiamond polymer based slurry. Lastly, CMP behavior of copper wafer was examined under different polishing conditions. The polishing was carried out using the commercial slurry procured from Cabot Microelectronics Inc., U.S. The copper wafers were characterized by AFM in order to analyze surface roughness. The results showed the reduction in average surface roughness occurred from 4.7 nm to 1.7 nm. This range of average surface roughness meets the demands of modern semiconductor industries.
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10

Davila-Rodriguez, Josue. "External cavity mode-locked semiconductor lasers for the generation of ultra-low noise multi-gigahertz frequency combs and applications in multi-heterodyne detection of arbitrary optical waveforms." Doctoral diss., University of Central Florida, 2013. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5621.

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The construction and characterization of ultra-low noise semiconductor-based mode-locked lasers as frequency comb sources with multi-gigahertz combline-to-combline spacing is studied in this dissertation. Several different systems were built and characterized. The first of these systems includes a novel mode-locking mechanism based on phase modulation and periodic spectral filtering. This mode-locked laser design uses the same intra-cavity elements for both mode-locking and frequency stabilization to an intra-cavity, 1,000 Finesse, Fabry-P&"233;rot Etalon (FPE). On a separate effort, a mode-locked laser based on a Slab-Coupled Optical Waveguide Amplifier (SCOWA) was built. This system generates a pulse-train with residual timing jitter of <2 fs and pulses compressible to <1 ps. Amplification of these pulse-trains with an external SCOWA lead to 390 mW of average optical power without evident degradation in phase noise and pulses that are compressible to the sub-picosecond regime. Finally, a new laser is built using a 10,000 Finesse Fabry-P&"233;rot Etalon held in a vacuum chamber. The fluctuations in the optical frequency of the individual comb-lines over time periods longer than 12 minutes are shown to be significantly reduced to <100 kHz in a measurement that is limited by the linewidth of the reference source. The use of these comb sources as local oscillators in multi-heterodyne detection of arbitrary optical waveforms is explored in three different cases. 1) Sampling of mode-locked pulses, 2) sampling of phase modulated continuous wave light and 3) periodically filtered white light. The last experiment achieves spectral interferometry with unprecedented resolution.
Ph.D.
Doctorate
Optics and Photonics
Optics and Photonics
Optics
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Books on the topic "Semiconductor metrology"

1

Diebold, A. C. Handbook of silicon semiconductor metrology. New York: Marcel Dekker, 2001.

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Gupta, DC, ed. Semiconductor Fabrication: Technology and Metrology. 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959: ASTM International, 1989. http://dx.doi.org/10.1520/stp990-eb.

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K, Tanner B., ed. X-ray metrology in semiconductor manufacturing. Boca Raton, FL: Taylor & Francis, 2006.

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Bowen, D. Keith. X-ray metrology in semiconductor manufacturing. Boca Raton, FL: Taylor & Francis/CRC Press, 2006.

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institut, Moskovskiĭ ėnergeticheskiĭ. Shumovye i degradat︠s︡ionnye prot︠s︡essy v poluprovodnikovykh priborakh: Metrologii︠a︡, diagnostika, tekhnologii︠a︡, uchebnyĭ prot︠s︡ess : materialy dokladov Mezhdunarodnogo nauchno-metodicheskogo seminara, Moskva, 1-5 dekabri︠a︡ 2003 g. = Noise and degradation processes in semiconductor devices : metrology, diagnostic, technology, cirriculum [i.e., curriculum]. Moskva: Moskovskiĭ ėnerg. in-t (tekhn. universitet), 2004.

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International Workshop on Statistical Metrology (4th 1999 Kyoto, Japan). 1999 4th International Workshop on Statistical Metrology. Piscataway, NJ, USA: Purchased from: IEEE Service Center Single Publication Sales Unit, 1999.

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International Workshop on Statistical Metrology (2nd 1997 Kyoto, Japan). 1997 2nd International Workshop on Statistical Metrology, June 8, 1997, Kyoto. [New York]: Institute of Electrical and Electronics Engineers, 1997.

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International, Workshop on Statistical Metrology (2nd 1997 Kyoto Japan). 1997 2nd International Workshop on Statistical Metrology: IWSM, June 8, 1997, Kyoto. Piscataway, NJ: IEEE, 1997.

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International Workshop on Statistical Metrology (5th 2000 Honolulu, Hawaii). 2000 5th International Workshop on Statistical Metrology: IWSM : June 11, 2000/Hawaii. Piscataway, N.J: IEEE, 2000.

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Europe, SPIE, European Optical Society, Wissenschaftliche Gesellschaft Lasertechnik, and SPIE (Society), eds. Modeling aspects in optical metrology II: 15-16 June 2009, Munich, Germany. Bellingham, Wash: SPIE, 2009.

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Book chapters on the topic "Semiconductor metrology"

1

Hollberg, L. "Optical Stabilization of Semiconductor Lasers." In Frequency Standards and Metrology, 231–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74501-0_41.

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Ohtsu, M., K. Kuboki, C. H. Shin, and M. Murata. "Frequency Control of Semiconductor Lasers." In Frequency Standards and Metrology, 242–46. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74501-0_43.

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de Labachelerie, M., K. Diomande, and P. Cérez. "Some Applications of Extended-Cavity Semiconductor Lasers." In Frequency Standards and Metrology, 439–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74501-0_88.

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Sunday, Daniel, and R. Kline. "X-Ray Metrology for Semiconductor Fabrication." In Metrology and Diagnostic Techniques for Nanoelectronics, 31–64. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315185385-4.

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Ohtsubo, Junji. "Metrology Based on Chaotic Semiconductor Lasers." In Springer Series in Optical Sciences, 419–57. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56138-7_11.

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Ohtsubo, Junji. "Metrology Based on Chaotic Semiconductor Lasers." In Springer Series in Optical Sciences, 385–413. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-30147-6_11.

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Kelly, Thomas, and Karen Henry. "Atom Probe Tomography of Semiconductor Nanostructures." In Metrology and Diagnostic Techniques for Nanoelectronics, 711–56. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315185385-16.

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Diebold, Alain. "Silicon Semiconductor Metrology." In Handbook of Silicon Semiconductor Metrology. CRC Press, 2001. http://dx.doi.org/10.1201/9780203904541.ch1.

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"Silicon Semiconductor Metrology." In Handbook of Silicon Semiconductor Metrology, 16–27. CRC Press, 2001. http://dx.doi.org/10.1201/9780203904541-8.

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"Thickness Metrology." In X-Ray Metrology in Semiconductor Manufacturing, 31–46. CRC Press, 2006. http://dx.doi.org/10.1201/9781420005653.ch2.

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Conference papers on the topic "Semiconductor metrology"

1

Marchman, Herschel M. "Dimensional metrology." In Single Frequency Semiconductor Lasers, edited by Jens Buus. SPIE, 2017. http://dx.doi.org/10.1117/12.2284083.

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Fielden, John. "Semiconductor inspection and metrology challenges." In 2018 31st International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2018. http://dx.doi.org/10.1109/ivnc.2018.8520121.

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Attota, Ravikiran, Ronald G. Dixson, John A. Kramar, James E. Potzick, András E. Vladár, Benjamin Bunday, Erik Novak, and Andrew Rudack. "TSOM method for semiconductor metrology." In SPIE Advanced Lithography, edited by Christopher J. Raymond. SPIE, 2011. http://dx.doi.org/10.1117/12.881620.

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Dai, Johnny, Priya Mukundhan, Johnny Mu, Frank Zheng, and Cheolkyu Kim. "Full Metrology Solutions for Advanced RF with Picosecond Ultrasonic Metrology." In 2020 China Semiconductor Technology International Conference (CSTIC). IEEE, 2020. http://dx.doi.org/10.1109/cstic49141.2020.9282571.

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Vartanian, Victor, Paul McClure, Vladimir Mancevski, Joseph J. Kopanski, Philp D. Rack, Ilona Sitnitsky, Matthew D. Bresin, Vince LaBella, and Kathleen Dunn. "Conductive carbon nanotubes for semiconductor metrology." In SPIE NanoScience + Engineering, edited by Michael T. Postek. SPIE, 2010. http://dx.doi.org/10.1117/12.861315.

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Yaw-Jen Chang, Yuan Kang, Chih-Liang Hsu, Chi-Tim Chang, and Tat Yan Chan. "Virtual Metrology Technique for Semiconductor Manufacturing." In The 2006 IEEE International Joint Conference on Neural Network Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/ijcnn.2006.247284.

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Barnes, Bryan M., Lowell P. Howard, and Richard M. Silver. "Illumination optimization for optical semiconductor metrology." In SPIE Optics + Photonics, edited by José M. Sasian and Mary G. Turner. SPIE, 2006. http://dx.doi.org/10.1117/12.681064.

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Borden, Peter. "Opportunities and Risks in Semiconductor Metrology." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005. AIP, 2005. http://dx.doi.org/10.1063/1.2062939.

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Fiore, A., F. Galeotti, T. Liu, M. Petruzzella, I. Seršić Vollenbroek, G. G. Lindgren, F. Pagliano, et al. "Integrated optomechanical sensing for semiconductor metrology." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_at.2021.jtu1i.4.

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Bunday, Ben, John Allgair, Mark Caldwell, Chas Archie, Eric Solecky, Bryan Rice, Bhanwar Singh, and Iraj Emami. "The ROI of Metrology." In 2006 International Symposium on Semiconductor Manufacturing (ISSM). IEEE, 2006. http://dx.doi.org/10.1109/issm.2006.4493115.

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Reports on the topic "Semiconductor metrology"

1

Knight, Stephen, and Alice D. Settle-Raskin. National Semiconductor Metrology Program:. Gaithersburg, MD: National Institute of Standards and Technology, 1997. http://dx.doi.org/10.6028/nist.ir.5851r1997.

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Knight, Stephen, and Alice D. Settle-Raskin. National Semiconductor Metrology Program:. Gaithersburg, MD: National Institute of Standards and Technology, 1998. http://dx.doi.org/10.6028/nist.ir.5851r1998.

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Knight, Stephen, and Alice D. Settle-Raskin. National Semiconductor Metrology Program:. Gaithersburg, MD: National Institute of Standards and Technology, 1999. http://dx.doi.org/10.6028/nist.ir.5851r1999.

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Yaney, David S., and Alice D. Settle-Raskin. National Semiconductor Metrology Program:. Gaithersburg, MD: National Institute of Standards and Technology, 1996. http://dx.doi.org/10.6028/nist.ir.5851.

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Scace, Robert I. Metrology for the semiconductor industry. Gaithersburg, MD: National Institute of Standards and Technology, 1991. http://dx.doi.org/10.6028/nist.ir.4653.

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McNeil, J. R. Instrumentation to Enhance Optical Scatterometry for Semiconductor Metrology Development. Fort Belvoir, VA: Defense Technical Information Center, January 1998. http://dx.doi.org/10.21236/ada354189.

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Settens, Charles M. An Assessment of Critical Dimension Small Angle X-ray Scattering Metrology for Advanced Semiconductor Manufacturing. Office of Scientific and Technical Information (OSTI), January 2015. http://dx.doi.org/10.2172/1338476.

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