Journal articles: 'Semiconductor metrology'

1

Michel, P. "Metrology systems for semiconductor industry." Nanoindustry Russia 73, no. 3 (2017): 18–20. http://dx.doi.org/10.22184/1993-8578.2017.73.3.18.20.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Corle, Timothy R. "Submicron metrology in the semiconductor industry." Solid-State Electronics 35, no. 3 (March 1992): 391–402. http://dx.doi.org/10.1016/0038-1101(92)90243-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Liang, Wei, Vladimir S. Ilchenko, Danny Eliyahu, Elijah Dale, Anatoliy A. Savchenkov, David Seidel, Andrey B. Matsko, and Lute Maleki. "Compact stabilized semiconductor laser for frequency metrology." Applied Optics 54, no. 11 (April 8, 2015): 3353. http://dx.doi.org/10.1364/ao.54.003353.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Bowen, Keith, and Paul Ryan. "X-Ray Metrology for the Semiconductor Industry." ECS Transactions 11, no. 3 (December 19, 2019): 257–71. http://dx.doi.org/10.1149/1.2778669.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Kang, Pilsung, Hyoung-joo Lee, Sungzoon Cho, Dongil Kim, Jinwoo Park, Chan-Kyoo Park, and Seungyong Doh. "A virtual metrology system for semiconductor manufacturing." Expert Systems with Applications 36, no. 10 (December 2009): 12554–61. http://dx.doi.org/10.1016/j.eswa.2009.05.053.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Radamson, Henry H., Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, et al. "State of the Art and Future Perspectives in Advanced CMOS Technology." Nanomaterials 10, no. 8 (August 7, 2020): 1555. http://dx.doi.org/10.3390/nano10081555.

Full text

Abstract:

The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

APA, Harvard, Vancouver, ISO, and other styles

7

Hoga, Morihisa. "Metrology using laser in lithography of semiconductor industry." Review of Laser Engineering 27, Supplement (1999): 104–5. http://dx.doi.org/10.2184/lsj.27.supplement_104.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Sederberg, Shawn, Fanqi Kong, Felix Hufnagel, Chunmei Zhang, Ebrahim Karimi, and Paul B. Corkum. "Vectorized optoelectronic control and metrology in a semiconductor." Nature Photonics 14, no. 11 (September 14, 2020): 680–85. http://dx.doi.org/10.1038/s41566-020-0690-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Barnes, B. M., R. Attota, R. Quintanilha, Y.-J. Sohn, and R. M. Silver. "Characterizing a scatterfield optical platform for semiconductor metrology." Measurement Science and Technology 22, no. 2 (December 21, 2010): 024003. http://dx.doi.org/10.1088/0957-0233/22/2/024003.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Richter, Curt A., Hao D. Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M. Stanford, Woong-Ki Hong, Takhee Lee, Dimitris E. Ioannou, and Qiliang Li. "Metrology for the Electrical Characterization of Semiconductor Nanowires." IEEE Transactions on Electron Devices 55, no. 11 (November 2008): 3086–95. http://dx.doi.org/10.1109/ted.2008.2005394.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Orji, N. G., M. Badaroglu, B. M. Barnes, C. Beitia, B. D. Bunday, U. Celano, R. J. Kline, M. Neisser, Y. Obeng, and A. E. Vladar. "Metrology for the next generation of semiconductor devices." Nature Electronics 1, no. 10 (October 2018): 532–47. http://dx.doi.org/10.1038/s41928-018-0150-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Postek, M. T., and A. E. Vladár. "Is Low Accelerating Voltage Always the Best for Semiconductor Inspection and Metrology?" Microscopy Today 12, no. 1 (January 2004): 46–47. http://dx.doi.org/10.1017/s1551929500051865.

Full text

Abstract:

Low accelerating voltage operation is an excellent mode of scanning electron microscopy and it is extensively used for measurements in semiconductor production. The beam penetration is small, and if properly applied, the specimen charging is kept at acceptable levels. But, is this always enough? Today, the scanning electron microscope (SEM) is being used in photomask metrology and imaging where charging is excessive. Charging is difficult to quantify and control as it varies greatly with instruments, operating conditions and sample. Therefore, it is also very difficult to model accurately. For accurate metrology charging must be overcome because the dynamic charging of the sample deflects the electron beam from its intended position and the intensity of the induced signal may vary uncontrollably. Deflection of the electron beam of even a few nanometers potentially results in a measurement error that is significant to modern semiconductor production.

APA, Harvard, Vancouver, ISO, and other styles

13

Pernau, Hans-Fridtjof. "Monitoring efficiency: Metrology systems for temperature dependent semiconductor characterization." Qatar Foundation Annual Research Forum Proceedings, no. 2013 (November 2013): EEP 042. http://dx.doi.org/10.5339/qfarf.2013.eep-042.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Roeth, Klaus-Dieter, Mark Wagner, and Frank Laske. "Changing Technology Requirements of Mask Metrology in Semiconductor Industry." Key Engineering Materials 613 (May 2014): 81–86. http://dx.doi.org/10.4028/www.scientific.net/kem.613.81.

Full text

Abstract:

Upcoming Semiconductor Technology Nodes will still be based on optical lithography by ArF water immersion technology because there are still too many open issues preventing extreme ultraviolet (EUV) lithography from being introduced into production. Several kinds of multi- patterning technology are in use to overcome the optical resolution limitation of 193nm high NA illumination and still to achieve <32nm half-pitch. Mask registration metrology must be adapted to provide useful and comprehensive data on the mask contribution to wafer overlay

APA, Harvard, Vancouver, ISO, and other styles

15

Schirru, Andrea, Simone Pampuri, Cristina De Luca, and Giuseppe De Nicolao. "Multilevel Kernel Methods for Virtual Metrology in Semiconductor Manufacturing." IFAC Proceedings Volumes 44, no. 1 (January 2011): 11614–21. http://dx.doi.org/10.3182/20110828-6-it-1002.01339.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Jenkins, C., D. I. Westwood, M. Elliott, J. E. Macdonald, C. Meaton, and S. Bland. "Metrology of semiconductor device structures by cross-sectional AFM." Materials Science and Engineering: B 80, no. 1-3 (March 2001): 138–41. http://dx.doi.org/10.1016/s0921-5107(00)00634-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Guo, X., J. A. Garcia, A. Mandelis, and A. Simmons. "Photo-Carrier-Radiometry (PCR) metrology for semiconductor manufacturing inspection." Journal de Physique IV (Proceedings) 125 (June 2005): 639–41. http://dx.doi.org/10.1051/jp4:2005125146.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Fleischmann, Claudia, Ramya Cuduvally, Richard Morris, Davit Melkonyan, Jonathan Op de Beeck, Igor Makhotkin, Paul van der Heide, and Wilfried Vandervorst. "Opportunities and Challenges in APT Metrology for Semiconductor Applications." Microscopy and Microanalysis 25, S2 (August 2019): 312–13. http://dx.doi.org/10.1017/s1431927619002290.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Park, Chanhee, Younghoon Kim, Youngjoon Park, and Seoung Bum Kim. "Multitask learning for virtual metrology in semiconductor manufacturing systems." Computers & Industrial Engineering 123 (September 2018): 209–19. http://dx.doi.org/10.1016/j.cie.2018.06.024.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Walecki, Wojtek J., Peter S. Walecki, Eve S. Walecki, and Abigail S. Walecki. "Polarization Resolved Grazing Angle Scatterometry for In Situ Monitoring of Roughness for Silicon and Compound Solar Cells, Light Emitting Devices and other Structured Surfaces." MRS Advances 2, no. 53 (2017): 3129–33. http://dx.doi.org/10.1557/adv.2017.464.

Full text

Abstract:

ABSTRACTNovel metrology tool for in-situ characterization of surfaces semiconductor solar cells (both silicon and compound), and Light Emitting Device diffusers is presented. The tool measures the total integrated scattering when measuring forward, or back-reflection at very large angles of incidence. The tool is insensitive to vibrations and stray light. We discuss polarization resolved data and characterize our technique using NIST traceable standards. We discuss it’s applications to semiconductor manufacturing.

APA, Harvard, Vancouver, ISO, and other styles

21

Schaeberle, Michael D., David D. Tuschel, and Patrick J. Treado. "Raman Chemical Imaging of Microcrystallinity in Silicon Semiconductor Devices." Applied Spectroscopy 55, no. 3 (March 2001): 257–66. http://dx.doi.org/10.1366/0003702011951867.

Full text

Abstract:

Silicon integrated circuits are fabricated by the creation of complex layered structures. The complexity of these structures provides many opportunities for impurities, improperly annealed dopants, and stress effects to cause device contamination and failure. Nondestructive metrology techniques that rapidly and noninvasively screen for defects and relate silicon device structure to device performance are of value. We describe the first use of a liquid crystal tunable filter (LCTF) Raman chemical imaging microscope to assess the crystallinity of silicon semiconductor integrated circuits in a rapid and nondestructive manner without the need for sample preparation. The instrument has demonstrated lateral spatial resolving power of better than 250 nm and is equipped with a tunable imaging spectrometer having a spectral bandpass of 7.6 cm−1. The instrument rapidly produces high-definition Raman images where each image pixel contains a high-quality Raman spectrum. When combined with powerful processing strategies, the Raman chemical imaging system has demonstrated spectral resolving power of 0.03 cm−1 in a test silicon semiconductor wafer fabricated by using ion implantation. In addition, we have applied Raman chemical imaging for volumetric Raman imaging by analyzing the surface distribution of polycrystalline thin film structures. The approaches described here for the first time are generally applicable to the nondestructive metrology of silicon and compound semiconductor devices.

APA, Harvard, Vancouver, ISO, and other styles

22

Richards, J. F., and R. J. Kline. "Applications of Scanned Probe Microscopy in the Integrated Circuit Fabrication Industry." Microscopy and Microanalysis 5, S2 (August 1999): 956–57. http://dx.doi.org/10.1017/s1431927600018109.

Full text

Abstract:

Scanning Probe Microscopy (SPM), in particular Atomic Force Microscopy (AFM), has become well establish member of the IC metrology tool arsenal which few IC manufacturers are without. Although Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) remain the “workhorse” metrology techniques, SPM (standard AFM, as well as Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM), Scanning Kelvin probe, Nanoindentaion and others) are being increasingly called upon to help solve IC production problems and to aid in research and development for next generation devices.Topographical metrology with standard AFM is by far the most common application of SPM in the semiconductor industry. It is typically used to gain surface roughness and grain size information about thin films that can be used as feedback to modify deposition conditions until the desired film properties are obtained.

APA, Harvard, Vancouver, ISO, and other styles

23

Schamp, C. T. "High-Resolution Metrology in the TEM." Microscopy Today 20, no. 3 (May 2012): 46–49. http://dx.doi.org/10.1017/s1551929512000363.

Full text

Abstract:

The transmission electron microscope (TEM) is well known as the technique of choice for visualization and measurement of features at near-atomic length scales, particularly for semiconductor devices. For example, a critical measurement of interest may be the thickness of the gate oxide in a transistor. The accuracy of these measurements is based on calibrated distances at each magnification. The term accuracy conveys the extent to which the measurement minimizes the difference between the measured value and the true value. The associated term precision is the closeness of agreement in a series of measurements locating the end-points of a measurement line. This article describes a method that increases the accuracy of metrology measurements applied to a high-resolution TEM image.

APA, Harvard, Vancouver, ISO, and other styles

24

Liu, Chong, Li Hong Yu, and Ying Chun Xu. "Research on Calibration of Semiconductor DC Tiny Current Source." Applied Mechanics and Materials 313-314 (March 2013): 638–42. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.638.

Full text

Abstract:

Semiconductor DC tiny current source is the equipments that can produce pA tiny current level. It is widely used in aerospace engineering, semiconductor circuit testing, new nanomaterials research, analysis science of development of life, etc with its unique advantages of high sensitivity and resolution in producing tiny current signal. It is a new challenge to calibrate these precise semiconductor DC tiny current sources in metrology. This passage did detailed studies on the domestic and foreign existing calibration methods, then developed a high resistance box, built semiconductor DC tiny current source calibration device, and developed automatic calibration software. In this paper, also the uncertainties of the calibration results had analyzed to fulfill the calibration of this tiny current source.

APA, Harvard, Vancouver, ISO, and other styles

25

Yao, Tsung-Fu, Andrew Duenner, and Michael Cullinan. "In-line metrology of nanoscale features in semiconductor manufacturing systems." Precision Engineering 47 (January 2017): 147–57. http://dx.doi.org/10.1016/j.precisioneng.2016.07.016.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Haq, A. Ul, and D. Djurdjanovic. "Virtual Metrology Concept for Predicting Defect Levels in Semiconductor Manufacturing." Procedia CIRP 57 (2016): 580–84. http://dx.doi.org/10.1016/j.procir.2016.11.100.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Sederberg, Shawn, Fanqi Kong, Felix Hufnagel, Chunmei Zhang, Ebrahim Karimi, and Paul B. Corkum. "Publisher Correction: Vectorized optoelectronic control and metrology in a semiconductor." Nature Photonics 14, no. 12 (October 12, 2020): 767. http://dx.doi.org/10.1038/s41566-020-00713-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Jarašiunas, K., and J. Vaitkus. "Transient Gratings in Metrology of Semiconductor Parameters and Optoelectronic Devices." physica status solidi (b) 150, no. 2 (December 1, 1988): 879–84. http://dx.doi.org/10.1002/pssb.2221500282.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Orji, N. G., M. Badaroglu, B. M. Barnes, C. Beitia, B. D. Bunday, U. Celano, R. J. Kline, M. Neisser, Y. Obeng, and A. E. Vladar. "Publisher Correction: Metrology for the next generation of semiconductor devices." Nature Electronics 1, no. 12 (November 9, 2018): 662. http://dx.doi.org/10.1038/s41928-018-0167-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Kurz, Daniel, Cristina De Luca, and Jurgen Pilz. "A Sampling Decision System for Virtual Metrology in Semiconductor Manufacturing." IEEE Transactions on Automation Science and Engineering 12, no. 1 (January 2015): 75–83. http://dx.doi.org/10.1109/tase.2014.2360214.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Kang, Pilsung, Dongil Kim, Hyoung-joo Lee, Seungyong Doh, and Sungzoon Cho. "Virtual metrology for run-to-run control in semiconductor manufacturing." Expert Systems with Applications 38, no. 3 (March 2011): 2508–22. http://dx.doi.org/10.1016/j.eswa.2010.08.040.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Halder, Sandip, Rita Vos, Masayuki Wada, Martine Claes, Karine Kenis, Paul W. Mertens, Prasanna Dighe, Sanda Radovanovic, Gavin Simpson, and Roger Sonnemans. "Using the Background Signal of a Light Scattering Tool for I/I Photo Resist Strip Optimization and Monitoring." Solid State Phenomena 187 (April 2012): 113–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.113.

Full text

Abstract:

With the continuous decrease of feature size of semiconductor devices new process related challenges must be overcome continuously. One of the key issues for technology development is to have the proper metrology in place to evaluate the myriad process steps fast and accurately. Sometimes the mere existence of a particular metrology is not enough because of cost and throughput issues. The goal of this paper is to show that simply by monitoring the background signal of a light scattering tool, certain process optimizations and monitoring can be done much faster while bringing down the cost significantly. We focus particularly on post I/I strip optimization in this paper.

APA, Harvard, Vancouver, ISO, and other styles

33

Fan, Shu Kai S., and Yuan Jung Chang. "Advanced Process Control Using Partial Least Squares." Advanced Materials Research 542-543 (June 2012): 124–27. http://dx.doi.org/10.4028/www.scientific.net/amr.542-543.124.

Full text

Abstract:

This paper applies the partial least squares (PLS) technique to the multiple-input multiple-output (MIMO) semiconductor processes under the paradigm of the Advanced Process Control (APC). First, we present a controller called the PLS-MIMO double exponentially weighted moving average (PLS-MIMO DEWMA) controller. It uses the PLS method as the model building/estimation technique to help the EWMA controller to produce more consistent and robust control outputs than purely using the conventional EWMA controller. To cope with metrology delays, the proposed controller uses the pre-process metrology data to build up a Virtual Metrology (VM) system that can provide the estimated process outputs for the PLS-MIMO DEWMA controller. Finally, a Fault Detection (FD) system is added based upon the principal components of PLS, which supplies the process state for VM and the PLS-MIMO DEWMA controller to respond to the system errors.

APA, Harvard, Vancouver, ISO, and other styles

34

He, Ming Xuan, Xin Lu, Xin Chen, Xing Ling, Yuan Li, Hong Wang, and Gui Fu Ding. "Design and Fabrication of a Micro-Capacitor for Nano Probing System." Applied Mechanics and Materials 105-107 (September 2011): 2255–58. http://dx.doi.org/10.4028/www.scientific.net/amm.105-107.2255.

Full text

Abstract:

Quantitative dimensional metrologies of Nano/microstructures are increasingly demanded following the rapid developments in, for instance, semiconductor and precision engineering industry, microsystem technology and materials science. In the recent years, coordinate measuring machines (CMMs) have become versatile and widespread metrology tools. Probing system is an important component of a CMM. A probing system based on a high accurate positioning transducer is crucial for micro and nano metrology. This paper presents a probing system based on a variable micro-capacitive transducer which has advantages of simple structure, low cost, high sensitivity, overload ability, excellent dynamic response characteristics, etc. The structure of variable capacitor was designed and optimized by means of finite element method (FEM), and fabricated by surface micromachining technology.

APA, Harvard, Vancouver, ISO, and other styles

35

McAfee, George H. "Approaching an absolute with SEM metrology." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 780–81. http://dx.doi.org/10.1017/s0424820100149738.

Full text

Abstract:

The Scanning Electron Microscope remains one of the most universal tools in the semiconductor industry. While it gained prominence in the areas of inspection and analysis, it is also a very capable metrology tool. There is a wide selection of S.E.M.′s available that are dedicated to line width measuring; however, this article discusses film thickness measuring during cross-sectional S.E.M. analysis.As with any metrology system, a process should begin with a certified and traceable measurement standard. N.I.S.T. SRM 484f was the standard employed for this experiment. A gauge and capability study was first performed on a Nanometrics CWIKSCAN II FE S.E.M.. Long range repeatability was calculated at 1.57% Figures 1 and 2 show the micrograph and video signal data respectively from the N.I.S.T. standard. Note the cursor position and measurement value on figure 2. The 1.072μm value agrees very well with the certified value of 1.067μm.• It is important to note that the aspect ratio on most CRT screens is not 1:1. Therefore, if any electronic manipulation of the image is required for cursor alignment, the system calibration must be performed at the same orientation where the measurements will be taken.

APA, Harvard, Vancouver, ISO, and other styles

36

Huang, Hsien-Cheng, Yu-Chuan Lin, Min-Hsiung Hung, Chia-Chun Tu, and Fan-Tien Cheng. "Development of cloud-based automatic virtual metrology system for semiconductor industry." Robotics and Computer-Integrated Manufacturing 34 (August 2015): 30–43. http://dx.doi.org/10.1016/j.rcim.2015.01.005.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Pan, Jason Chao-Hsien, and Damon HE Tai. "Implementing virtual metrology for in-line quality control in semiconductor manufacturing." International Journal of Systems Science 40, no. 5 (May 2009): 461–70. http://dx.doi.org/10.1080/00207720802645204.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Kang, Seokho, and Pilsung Kang. "An intelligent virtual metrology system with adaptive update for semiconductor manufacturing." Journal of Process Control 52 (April 2017): 66–74. http://dx.doi.org/10.1016/j.jprocont.2017.02.002.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Di Russo, E., F. Moyon, N. Gogneau, L. Largeau, E. Giraud, J. F. Carlin, N. Grandjean, et al. "Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography." Journal of Physical Chemistry C 122, no. 29 (June 22, 2018): 16704–14. http://dx.doi.org/10.1021/acs.jpcc.8b03223.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Jula, P., C. J. Spanos, and R. C. Leachman. "Comparing the economic impact of alternative metrology methods in semiconductor manufacturing." IEEE Transactions on Semiconductor Manufacturing 15, no. 4 (November 2002): 454–63. http://dx.doi.org/10.1109/tsm.2002.804909.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Suthar, Kerul, Devarshi Shah, Jin Wang, and Q. Peter He. "Next-generation virtual metrology for semiconductor manufacturing: A feature-based framework." Computers & Chemical Engineering 127 (August 2019): 140–49. http://dx.doi.org/10.1016/j.compchemeng.2019.05.016.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

McCartney, M. R., and Jing Li. "Electron Holography of Semiconductor Junctions." Microscopy and Microanalysis 4, S2 (July 1998): 642–43. http://dx.doi.org/10.1017/s1431927600023333.

Full text

Abstract:

TEM has not traditionally contributed to characterization of semiconductor junctions, except for some intriguing results by Perovic, Hull and Alvis where highly doped layers gave contrast under very specific sample preparation and imaging conditions. Since electron holography is sensitive to the phase of the electron wavefront that has passed through the sample, it has the potential to provide voltage contrast. In principle, given its inherent two-dimensional and quantitative character, electron holography is a strong candidate for analysis of semiconductor device junctions.The sample for the work reported here was one of a group of test specimens fabricated at IBM for a dopant metrology round-robin comparison to evaluate various profiling methods. The substrate was <100> p-type silicon, boron-doped at 11-25 Ω-cm-1. The test structure was fabricated using low- temperature epitaxial growth and consisted of an abrupt p-n junction, formed by abutting 1020cm-3 doped regions of boron and phosphorus

APA, Harvard, Vancouver, ISO, and other styles

43

Bischoff, J., R. Mastylo, G. Granet, and E. Manske. "Optical metrology beyond Abbe and Rayleigh." Suplemento de la Revista Mexicana de Física 1, no. 3 (August 22, 2020): 9–16. http://dx.doi.org/10.31349/suplrevmexfis.1.3.9.

Full text

Abstract:

For many years, it was believed that optical microscopy and metrology was limited in resolution related to the light wavelength as suggested by Ernst Abbe and Lord Rayleigh. In recent past, several approaches have been developed to overcome these limitations such as Nobel price honored STED or optical CD as widely used in semiconductor metrology. Unfortunately, both techniques need special samples. While STED relies on fluorescence, OCD requires grating samples. In our contribution, we present two model based (mb) approaches to overcome some of these restrictions. One is mb Laser Focus Scanning (mLFS). Here, we show how to improve the accuracy of edge detection from several hundred nm to about 10 - 20 nm by exploiting rigorous modeling. The second one is Scanning Coherent Fourier Scatterometry (SCFS) where the diffracted Fourier spectrum is detected and the attempt is undertaken to retireve the sample profile. It is shown that this technique is very sensitive, particularly when the phase is recorded by means of a wave-front sensor. Measurements and simulations for periodic as well as for aperiodic sub-resolution features are show already good agreement. Moreover, we strongly believe that the observed high sensitivity of the Fourier spectra opens the path to quantitatively measurements below the resolution limits of light.

APA, Harvard, Vancouver, ISO, and other styles

44

Wang, Mu Chun, and Hsin Chia Yang. "A Non-Destructive and Effective Metrology to Automatically Monitor Kink Effect of MOSFETs." Advanced Materials Research 291-294 (July 2011): 2910–13. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.2910.

Full text

Abstract:

The kink effect is a harassed issue existing in metal-oxide-semiconductor field-effect transistors (MOSFETs) and usually degrades the whole chip performance, especially in analog circuit operation. No matter what the device isolation is with local oxidation of silicon (LOCOS) process or shallow trench isolation (STI) process, this effect more or less depicts. How to sense this effect in integrated-circuit (IC) mass-production is a crucial event. Through a second derivative method on Ids versus Vgs curves in MOSFET device, the unhealthy devices can be effectively screened out with the application of programmable auto testers. Using this derivative metrology implemented into the measurement testers, the distribution of kink devices on wafer is easily plotted. This information is very precious to the semiconductor process engineers in process improvement, too.

APA, Harvard, Vancouver, ISO, and other styles

45

Taylor, S., J. Mardinly, M. A. O'Keefe, and R. Gronsky. "HRTEM Image Simulations for Gate Oxide Metrology." Microscopy and Microanalysis 6, S2 (August 2000): 1080–81. http://dx.doi.org/10.1017/s1431927600037892.

Full text

Abstract:

High resolution transmission electron microscopy (HRTEM) has found extensive use in the semiconductor industry for performing device metrology and characterization. However, shrinking device dimensions (gate oxides are rapidly approaching 10Å) present challenges to the use of HRTEM for many applications, including gate oxide metrology. In this study, we performed HRTEM image simulations of a MOSFET device to examine the accuracy of HRTEM in measuring gate oxide thickness. Length measurements extracted from simulated images were compared to actual dimensions in the model structure to assess TEM accuracy. The effects of specimen tilt, specimen thickness, objective lens defocus and coefficient of spherical aberration (CS) on measurement accuracy were explored for nominal 10Å and 16Å gate oxide thicknesses.The gate oxide was modeled as an amorphous silicon oxide situated between a gate electrode and substrate, both modeled as single crystal Si(100). Image simulations of the sandwich structure were performed in cross-section (with Si[110] parallel to beam direction) using the multislice approximation for a 200 kV microscope with Cs=0.5mm.

APA, Harvard, Vancouver, ISO, and other styles

46

Rideout, David. "Infrared Laser Confocal Microscopy: Fast, Flexible, Cost-Effective Inspection and Metrology Tool for Microelectronic Manufacturing." Microscopy Today 15, no. 1 (January 2007): 36–37. http://dx.doi.org/10.1017/s155192950005118x.

Full text

Abstract:

Microelectronics and semiconductor wafer manufacturing are among the fastest evolving technology industries today. Wafer sizes typically are 200 mm to 300 mm while critical dimensions are shrinking to 0.09 μm and smaller. As the size of discrete devices continues to be reduced while device density increases, the need for fast, accurate, flexible metrology and inspection tools in the microelectronics industry grows.Back in the early 1980's, semiconductor inspection was performed primarily by brightfield optical microscopes and with automated detection tools. The adaptation of automated detection tools led to the systematic control of increasingly smaller defects. The smallest detectable defect using these automated tools fell to below the 0.30-micron mark during the 1990's.

APA, Harvard, Vancouver, ISO, and other styles

47

Takaya, Yasuhiro. "Special Issue on Measurement and Quality Control." International Journal of Automation Technology 5, no. 2 (March 5, 2011): 85. http://dx.doi.org/10.20965/ijat.2011.p0085.

Full text

Abstract:

It has now been recognized that prompt scientific and technological measures should be taken against the rapidly expanding globalization of common issues such as ecology, economy, energy, food, and safety. Measurements are the key to progress in the natural sciences and the major requirement for technological innovation. This special issue reviews manufacturing metrology and quality management evolution, where applications now range from macro- to micro- and nanoengineering. The articles presented point out their implications for science, engineering, and industry and highlight the latest in research, development, and potential applications of promising measurement and quality control techniques. These include specific applications in aerospace, automotive and transport, semiconductor devices, photonics, and manufacturing. Measurement and quality control are essential to industrial technology, as shown in cases of quality control of optical devices, the measurement of metal parts in the automotive industry, silicon wafer inspection in the semiconductor industry, and the study of biomedical chips. The developments in such main fields of interests as dimensional metrology in production engineering, laser metrology for precision measurement, and quality management methodology are enabling us to extend applications in emerging basic technologies. In most industrial applications, measurement of dimensional, geometrical, and mechanical quantities in the manufacturing process have changed significantly and globally due to an increasing demand for precision arising from the introduction of new manufacturing technologies and requirements for parts functionality. The requirements of precision engineering made it inevitable to establish traceable metrology supporting the international exchange of goods and the development of precise manufacturing processes. I am certain that this special issue will further strengthen the ongoing effort for attaining excellence inmeasurement science and technology and quality control. I sincerely hope this special issue will give many beginning and established researchers a chance to share 21st Century technology. Lastly, I thank the authors, reviewers, and editors for their invaluable advice, strong backup, and continuing cooperation that have helped ensure the success of this issue.

APA, Harvard, Vancouver, ISO, and other styles

48

Postek, M. T., and A. E. Vladár. "Is Low Accelerating Voltage Always the Best for Semiconductor Inspection and Metrology?" Microscopy and Microanalysis 9, S02 (July 24, 2003): 978–79. http://dx.doi.org/10.1017/s1431927603444899.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Frase, C. G., D. Gnieser, and H. Bosse. "Model-based SEM for dimensional metrology tasks in semiconductor and mask industry." Journal of Physics D: Applied Physics 42, no. 18 (September 2, 2009): 183001. http://dx.doi.org/10.1088/0022-3727/42/18/183001.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Talanov, Vladimir V., André Scherz, and Andrew R. Schwartz. "Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers." Applied Physics Letters 88, no. 26 (June 26, 2006): 262901. http://dx.doi.org/10.1063/1.2216898.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Journal articles on the topic 'Semiconductor metrology'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles