Relevant bibliographies by topics / Semiconductor mixed crystal

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Semiconductor mixed crystal'

Author: Grafiati
Published: 17 May 2025
Last updated: 31 July 2025

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Journal articles on the topic "Semiconductor mixed crystal"

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Zhang, Ziyang, Zhengran He, Kyeiwaa Asare-Yeboah, and Sheng Bi. "Organic Semiconductors with Benzoic Acid Based Additives for Solution- Processed Thin Film Transistors." Current Chinese Science 1, no. 3 (2021): 306–14. http://dx.doi.org/10.2174/2210298101666210204161237.

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Background: although solution-processed small molecular organic semiconductors have attracted great attention for organic electronic applications, the intrinsic crystal misorientation of the organic semiconductors still remains a challenging issue. Objective: two benzoic acid-based additives, i.e. 4-propylbenzoic acid (RBA) and 4-octylbenzoic acid (OBA), were employed to regulate the crystal growth and charge transport of organic semiconductors. Methods: RBA and OBA were mixed with a π-conjugated organic semiconductor 6,13- bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), respectively
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Nishimoto, Naoki, Katsumi Yoshino, and Junko Fujihara. "Growth of TiO2–Nb2O5 mixed thin films by metal–organic decomposition." International Journal of Modern Physics B 29, no. 30 (2015): 1550215. http://dx.doi.org/10.1142/s021797921550215x.

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The influence of mixed metal–organic decomposition (MOD) coating materials has been studied based on the crystal growth of TiO2 and TiO2–Nb2O5 mixed thin films. These thin films were grown on quartz substrates using a dip-coating method. The crystal structures of TiO2 films are well known to depend on sintering temperature, whereas the surface morphologies are not significantly affected by sintering temperature. Nb2O5 was mixed with the TiO2 source material as a possible electron donor. The Nb content of the TiO2–Nb2O5 mixed thin film depended on the Nb mole ratio in the TiO2–Nb2O5 mixed MOD c
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Hawrami, R., L. Matei, E. Ariesanti, et al. "Growth and Performance of Perovskite Semiconductor CsPbX3 (X = Cl, Br, I, or Mixed Halide) for Detection and Imaging Applications." Materials 17, no. 21 (2024): 5360. http://dx.doi.org/10.3390/ma17215360.

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The material family halide perovskites has been critical in recent room-temperature radiation detection semiconductor research. Cesium lead bromide (CsPbBr3) is a halide perovskite that exhibits characteristics of a semiconductor that would be suitable for applications in various fields. In this paper, we report on the correlations between material purification and crystal material properties. Crystal boules of CsPbX3 (where X = Cl, Br, I, or mixed) were grown with the Bridgman growth method. We describe in great detail the fabrication techniques used to prepare sample surfaces for contact dep
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Rarenko, Ilariy, Dmytro Korbutyak, Volodymyr Koshkin, et al. "Materials and Photosensor Devices with High Radiation Stability." Advanced Materials Research 1117 (July 2015): 107–13. http://dx.doi.org/10.4028/www.scientific.net/amr.1117.107.

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Semiconductor Hg3In2Te6 crystals and their analogous are solid solutions of In2Te3 and HgTe. Hg3In2Te6 crystals are congruently melted as chemical compound. Like In2Te3 the Hg3In2Te6 crystal has cubic crystal lattice with stoichiometric vacancies in their crystal structure. The electroconductivity, photoconductivity, mechanical, chemical properties of the crystals do not deteriorate after their irradiation by γ-photons with energies up to 1 MeV and doses up to 1018 cm-2 , by electrons with energies up to 300 MeV and doses up to 1019 cm-2 and by mixed reactor irradiation (filtered slow neutrons
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Pavlyuk, Volodymyr, Grygoriy Dmytriv, Malgorzata Szyrej, Sergii Levkovets, and Oleh Parasyuk. "A new semiconducting quaternary mixed halogenide: pentathallium dimercury pentabromide tetraiodide, Tl5Hg2Br5I4." Acta Crystallographica Section C Structural Chemistry 70, no. 6 (2014): 550–54. http://dx.doi.org/10.1107/s2053229614009966.

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A novel quaternary mixed halogenide, Tl5Hg2Br5I4, was synthesized by fusion of thallium bromide and mercury iodide in a 5:2 molar ratio. The crystal structure of Tl5Hg2Br5I4represents a new series of composite structures described by the general formulanTlBr*mTl2[HgBr2I2]; in this case,n= 4 andm= 8. Electronic structure calculations indicate that the title compound is a semiconductor.
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Galeeva, Alexandra V., Ivan V. Krylov, Konstantin A. Drozdov, et al. "Electron energy relaxation under terahertz excitation in (Cd1− x Zn x )3As2 Dirac semimetals." Beilstein Journal of Nanotechnology 8 (January 17, 2017): 167–71. http://dx.doi.org/10.3762/bjnano.8.17.

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We demonstrate that measurements of the photo-electromagnetic effect using terahertz laser radiation provide an argument for the existence of highly conductive surface electron states with a spin texture in Dirac semimetals (Cd1− x Zn x )3As2. We performed a study on a range of (Cd1− x Zn x )3As2 mixed crystals undergoing a transition from the Dirac semimetal phase with an inverse electron energy spectrum to trivial a semiconductor with a direct spectrum in the crystal bulk by varying the composition x. We show that for the Dirac semimetal phase, the photo-electromagnetic effect amplitude is d
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Kuklin, Mikhail S., and Antti J. Karttunen. "Evolutionary Algorithm-Based Crystal Structure Prediction of CuxZnyOz Ternary Oxides." Molecules 28, no. 16 (2023): 5986. http://dx.doi.org/10.3390/molecules28165986.

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Binary zinc(II) oxide (ZnO) and copper(II) oxide (CuO) are used in a number of applications, including optoelectronic and semiconductor applications. However, no crystal structures have been reported for ternary Cu-Zn-O oxides. In that context, we investigated the structural characteristics and thermodynamics of CuxZnyOz ternary oxides to map their experimental feasibility. We combined evolutionary crystal structure prediction and quantum chemical methods to investigate potential CuxZnyOz ternary oxides. The USPEX algorithm and density functional theory were used to screen over 4000 crystal st
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Hashimoto, Ai, Hideki Sako, Junichiro Sameshima, et al. "Structural Characterization of a Ga2O3 Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM Analysis." Materials Science Forum 1004 (July 2020): 505–11. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.505.

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Ga2O3 is a hopeful wide-band-gap semiconductor material for a next-generation power semiconductor. We performed crystal structure analysis on Ga2O3 film on sapphire substrate using cross-sectional transmission electron microscope (TEM) and atomic resolution plan-view scanning transmission electron microscopy (STEM). The TEM analysis suggested that the main Ga2O3 film is composed of κ-Ga2O3 or mixed crystal of κ-Ga2O3 and ε-Ga2O3. But, it is difficult to distinguish these two possibilities only by cross-sectional TEM. Contrast modulation of Ga atomic columns in the atomic resolution HAADF-STEM
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Nishitani, Mikihiko, Masahiro Sakai, and Yukihiro Morita. "The Wide band p- type material formed by the thin film with ZnO - NiO mixed crystal system." MRS Proceedings 1538 (2013): 399–404. http://dx.doi.org/10.1557/opl.2013.551.

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ABSTRACTWe study ZnO-NiO mixed crystal thin film as a wide band p-type material for the hetero-junction with ZnO. As for the hetero-junction of the ZnO ( n-type ) and the NiO which have relatively stable p-type semiconductor characteristics, there are issues on the crystallographic mismatch and the band offset of the valence band as well as the conduction band . We made the ZnO-NiO mixed crystal thin film in all composition range with the substrate temperature of 250°C, using magnetron sputtering process and acquired the basic data for the change of electrical conductivity with conduction type
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Omatu, Sigeru, Hideo Araki, Toru Fujinaka, et al. "Mixed Odor Classification for QCM Sensor Data by Neural Network." ADCAIJ: Advances in Distributed Computing and Artificial Intelligence Journal 1, no. 2 (2013): 43–48. http://dx.doi.org/10.14201/adcaij2012124348.

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Compared with metal oxide semiconductor gas sensors, quarts crystal microbalance (QCM) sensors are sensitive for odors. Using an array of QCM sensors, we measure mixed odors and classify them into an original odor class beforemixing based on neural networks. For simplicity we consider the case that two kinds of odor are mixed since more than two becomes too complex to analyze the classification results. We have used eight sensors and four kinds of odor are used as the original odors. The neural network used here is a conventional layered neural network. The classification is acceptable althoug
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Dissertations / Theses on the topic "Semiconductor mixed crystal"

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Guergouri, Kamel. "Etude des defauts cristallins et des proprietes physiques associees dans cdte et ses alliages avec znte, mnte." Paris 6, 1987. http://www.theses.fr/1987PA066412.

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Etude de l'amelioration de cdte dans le cadre de la recherche de semiconducteurs de bonne qualite cristalline. Le premier parametre necessaire a cette amelioration et celui de la substitution de cd par zn (impurete isoelectronique et permet la reduction de la densite de dislocations d'un facteur 10. Proposition d'un modele de durcissement d'alliage pour expliquer ce phenomene. Le 2eme parametre concerne la recherche des conditions de croissance optimales
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Lemoine, Pascale. "Combinaisons ternaires soufrées formées par l'europium et un second métal : exemples de dérivés de l'europium à valence mixte; synthèse, structures et propriétés physiques." Paris 6, 1986. http://www.theses.fr/1986PA066416.

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L'études des combinaisons ternaires soufrées formées par l'europium et un second métal conduit dans de nombreux cas a des composes qui ne contiennent que de l'europium divalent, tels que Eu3Sb4S9, EuLn2S4 (Ln: Dy—Lu, Y) et Eu1,1Bi2S4. . Dans ces trois composes Eu (ii) présente un environnement 8-prismatique et le second métal, un environnement octaédrique. Dans Eu3Sb4S9, le doublet 5s2 non-engagé de Sb (iii) crée de larges tunnels au sein de la structure. Les composés EuLn2S4 ont une structure de type CaFe2O4. Le réseau du composé Eu1, 1Bi2S4 contient de larges canaux partiellement occupés par
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Elmahjoubi, Abdelmajid. "Phonons/phonon-polaritons des cristaux mixtes GaAs₁₋ₓPₓ, Cd₁₋ₓBeₓTe & Zn₁₋ₓMgₓS : Diffusion inélastique de neutrons/lumière (Raman) & calculs ab initio - le modèle de percolation au banc d’essai". Electronic Thesis or Diss., Université de Lorraine, 2024. http://www.theses.fr/2024LORR0187.

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Les cristaux mixtes semi-conducteurs A₁₋ₓBₓC de structure cubique (zinc-blende) ou hexagonale (wurtzite) sont intéressants pour l'optoélectronique, en cela qu'ils offrent la possibilité d'ajuster finement en fonction de la composition x la bande interdite et les paramètres du réseau. Plus fondamentalement, ces alliages sont les systèmes désordonnés les plus simples que l'on puisse imaginer. À ce titre, ce sont des systèmes idéaux pour étudier les effets du désordre sur les propriétés physiques, notamment la dynamique de réseau. C'est dans ce contexte que le modèle de percolation a été développ
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Lassalle, Francis. "Conception et mise en oeuvre d'un reacteur d'epitaxie gainas/inp par la methode aux hydrures, analyse des conditions de croissance." Clermont-Ferrand 2, 1987. http://www.theses.fr/1987CLF2D193.

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Reacteur permettant la croissance de couches epitaxiques dans le systeme (ga,in,as,p) par transport en phase vapeur et par la methode aux hydrures (ph::(3),ash::(3),h::(2),hcl,in,ga). Sa conception autorise la realisation d'heterostructures a interfaces abruptes en conservant une geometrie de reacteur monochambre. Analyse des conditions de croissance du ternaire gainas sur support inp (100). Mise en evidence de l'effet du non equilibre entre les especes as::(2) et as::(4) sur la presence d'un depot parasite en amont de l'echantillon et sur les caracteristiques du depot. Proposition d'un modele
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Garandet, Jean-Paul. "Etude des phénomènes de transport et des défauts cristallins dans des alliages Ga-Sb et Ga-In-Sb élaborés par la méthode Bridgman." Grenoble INPG, 1989. http://www.theses.fr/1989INPG0058.

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BENDRAOUI, ABDELLATIF. "Traitements chimiques et thermiques de composes semi-conducteurs iii-v a base de in, ga, as, p en vue d'une reprise d'epitaxie." Clermont-Ferrand 2, 1989. http://www.theses.fr/1989CLF21151.

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L'etat de surface des semiconducteurs iii-v avant la reprise d'epitaxie conditionne les proprietes electroniques et la stabilite des composants realises. Mise en evidence de l'aspect dynamique de stabilisation des composes iii-v a base de in, ga, p et as sous hydrures. Developpement d'une methode originale de stabilisation statique de ces composes a base de chlorures d'in. Analyse des resultats experimentaux et interpretation en utilisant des modeles theoriques bases sur la thermodynamique statistique
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Dal'Bo, Frédéric. "Spectroscopie optique d'heterostructures a base de tellurure de cadmium epitaxiees par jets moleculaires." Grenoble 1, 1988. http://www.theses.fr/1988GRE10123.

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La relaxation des contraintes est mise en evidence par une etude spectroscopique des transitions des excitons libres et varie en fonction de l'epaisseur de la couche et de l'orientation du support. Les differences entre les spectres de photoluminescence des materiaux massifs et ceux des couches epitaxiees sont dues aux effets des contraintes, aux defauts cristallins et aux impuretes introduites pendant la croissance. La structure de bande du puits quantique contraint est etudiee par spectroscopie optique. Elle est etudiee en fonction de l'epaisseur du puits
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Bassani, Franck. "Dopage indium d'hétérostructures CdTe/CdZnTe en épitaxie par jets moléculaires." Grenoble 1, 1993. http://www.theses.fr/1993GRE10043.

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Ce travail concerne le dopage indium des couches minces de cdte et des heterostructures cdte/cdznte elaborees par la technique d'epitaxie par jets moleculaires selon les orientations (001), (111) et (211). Nous avons mis en evidence l'importance des conditions stchiometriques de surface durant la croissance: un flux excedentaire de cd controle ainsi qu'une temperature d'elaboration basse (220c) sont necessaires. Pour une gamme de concentration d'indium comprise entre 10#1#6 et 10#1#8 cm##3, l'analyse des proprietes electrique et optique des couches minces de cdte(001) uniformement dopees montr
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Shen, Jianyun. "Thermodynamique des systèmes III-V, As-Ga-In et Al-As et analyse de leur épitaxie par jets moléculaires." Grenoble INPG, 1989. http://www.theses.fr/1989INPG0087.

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Diagramme de phase et donnees thermodynamiques du systeme ternaire as-ga-in sont optimises a partir des valeurs experimentales disponsibles. Etude de l'influence de l'energie elastique sur le diagramme de phase. Analyse thermodynamique de l'epitaxie par jets moleculaires des multicouches in#1##yga#yas
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Valloggia, Sylvie. "SPECTROSCOPIE DE PHOTOLUMINESCENCE LOCALE DANS LES SEMICONDUCTEURS MASSIFS (Si, InP) ET LES PUITS QUANTIQUES (GaAs/GaAlAs)." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37619041b.

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Books on the topic "Semiconductor mixed crystal"

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1928-, Elliott R. J., and Ipatova I. P. 1929-, eds. Optical properties of mixed crystals. North-Holland, 1988.

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Rössler, U., ed. New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5.

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Kavokin, Alexey V., Jeremy J. Baumberg, Guillaume Malpuech, and Fabrice P. Laussy. Semiclassical description of light–matter coupling. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198782995.003.0004.

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In this chapter we consider light coupling to elementary semiconductor crystal excitations—excitons—and discuss the optical properties of mixed light–matter quasiparticles named exciton-polaritons, which play a decisive role in optical spectra of microcavities. Our considerations are based on the classical Maxwell equations coupled to the material relation accounting for the quantum properties of excitons.
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Rössler, Ulrich, Junhao Chu, Dieter Strauch, Tomasz Dietl, and Euzi da Silva. New Data and Updates for III-V and Ii-Vi Compounds, and Their Mixed Crystals: Condensed Matter, Semiconductors. Springer, 2013.

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Book chapters on the topic "Semiconductor mixed crystal"

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Strauch, D. "InN: crystal structure." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_269.

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Shen, S. C., J. H. Chu, and H. J. Ye. "Phonon Spectra of Mixed Crystal CdX Hg1-X, Te and Cd1-XMnXTe." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_269.

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Matsukura, F. "Ga1-xCrxSb: crystal structure." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_198.

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Jusserand, B., D. Paquet, and K. Kunc. "Cpa Lattice Dynamics of III-V Mixed Crystals: Theory and Experiment." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_263.

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Strauch, D. "C: crystal structure, lattice parameters." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_156.

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Strauch, D. "SiC: crystal structures, phase transitions." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_162.

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Meyer, B. K. "ZnO: crystal-field splitting energy." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_324.

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Strauch, D. "BAs: crystal structures, phase transitions." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_84.

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Hönerlage, B. "Al1-xMnxAs: crystal structure, lattice parameters." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_53.

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Matsukura, F. "Ga1-xCrxAs: crystal structure, lattice parameter." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_91.

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Conference papers on the topic "Semiconductor mixed crystal"

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Dobrowolski, W., B. Brodowska, M. Arciszewska, et al. "Magnetic Properties of Ge1−x−yMnxEuyTe Mixed Crystals." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730344.

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Moses, A. F., T. B. Hoang, L. Ahtapodov, et al. "Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666502.

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Ostrovskaya, E. A., N. N. Akhmediev, G. I. Stegeman, J. U. Kang, and J. S. Aitchison. "Mixed-Mode Spatial Solitons in Semiconductor Waveguides with Cubic Anisotropy." In Nonlinear Guided Waves and Their Applications. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/nlgw.1996.fd.16.

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In birefringent optical fibers, linearly-polarized solitons associated with the fast mode become unstable at a certain power level [1,2]. A similar instability exists in planar waveguides made from isotropic materials [3]. It has been shown for the first time in [4,5], that the physical reason for this instability in isotropic materials is the appearance of new elliptically-polarized solitons above a certain critical power. In this work we prove that new solitons also exist in media with cubic anisotropy. Moreover, we have found that in planar waveguides made from cubic crystals, the symmetry
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Chase, L. L., Stephen A. Payne, and Robert Adair. "Measurement of nonlinear refractive indices of optical crystals and glasses by three-wave mixing at 1.06 µm." In International Laser Science Conference. Optica Publishing Group, 1986. http://dx.doi.org/10.1364/ils.1986.thh1.

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We have developed a three-wave mixing apparatus for rapid and accurate measurements of the third-order nonlinear susceptibility of transparent optical materials by comparison with standard samples. The 1.06-µm fundamental of a Nd:YAG laser is mixed with a tunable beam generated from a 560-nm dye laser which is shifted to the 1.06-µm region by second order Stokes Raman scattering from hydrogen. A small frequency difference (70 cm−1) between the two beams allows the determination of the joint contributions of the electronic hyperpolarizability and the atomic displacements to the nonlinear suscep
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Kozlovsky, W. J., and W. Lanth. "Stable 428 nm Second-Harmonic Output Using Frequency Locking of a GaAlAs Diode laser to a KNbO3 Nonlinear Resonator." In OSA Annual Meeting. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.pd24.

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Frequency doubling of a GaAlAs diode laser using a build-up cavity with a KNbO3 crystal is an attractive approach for developing an efficient, compact blue light source.1-3 If the laser and resonator frequencies are precisely matched the 856-nm fundamental radiation builds up to a high intensity which results in efficient second-harmonic generation of 428-nm light. Small changes of the diode-laser wavelength due to current (~5 GHz/mA) or temperature (~40 GHz/°C) variations and shifts of the cavity resonance induced by self-heating phenomena2 result in substantial fluctuations of the infrared p
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Macodiyo, Dan O., Hitoshi Soyama, and Kazuo Hayashi. "Characterization of Defects for Effective Gettering in Silicon Wafer and Polysilicon Thin Films." In ASME 8th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2006. http://dx.doi.org/10.1115/esda2006-95340.

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The scaling down of commercial products has fueled the rapid development of micro- and nano-electromechanical systems (MEMS/NEMS). The enabling technologies of surface micromachining for silicon has made it compatible with industry strategies towards integrated circuits used in actuation and controls of systems. During the silicon processing, microdefects do occur. If properly controlled, they act as gettering sites for metallic species and hence remove unwanted impurities in the active device regions of semiconductor devices. On the other hand, microdefects can be responsible for plastic defo
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