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Journal articles on the topic 'Semiconductor mixed crystal'

Author: Grafiati

Published: 17 May 2025

Last updated: 31 July 2025

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1

Zhang, Ziyang, Zhengran He, Kyeiwaa Asare-Yeboah, and Sheng Bi. "Organic Semiconductors with Benzoic Acid Based Additives for Solution- Processed Thin Film Transistors." Current Chinese Science 1, no. 3 (2021): 306–14. http://dx.doi.org/10.2174/2210298101666210204161237.

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Background: although solution-processed small molecular organic semiconductors have attracted great attention for organic electronic applications, the intrinsic crystal misorientation of the organic semiconductors still remains a challenging issue. Objective: two benzoic acid-based additives, i.e. 4-propylbenzoic acid (RBA) and 4-octylbenzoic acid (OBA), were employed to regulate the crystal growth and charge transport of organic semiconductors. Methods: RBA and OBA were mixed with a π-conjugated organic semiconductor 6,13- bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), respectively

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2

Nishimoto, Naoki, Katsumi Yoshino, and Junko Fujihara. "Growth of TiO2–Nb2O5 mixed thin films by metal–organic decomposition." International Journal of Modern Physics B 29, no. 30 (2015): 1550215. http://dx.doi.org/10.1142/s021797921550215x.

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The influence of mixed metal–organic decomposition (MOD) coating materials has been studied based on the crystal growth of TiO2 and TiO2–Nb2O5 mixed thin films. These thin films were grown on quartz substrates using a dip-coating method. The crystal structures of TiO2 films are well known to depend on sintering temperature, whereas the surface morphologies are not significantly affected by sintering temperature. Nb2O5 was mixed with the TiO2 source material as a possible electron donor. The Nb content of the TiO2–Nb2O5 mixed thin film depended on the Nb mole ratio in the TiO2–Nb2O5 mixed MOD c

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3

Hawrami, R., L. Matei, E. Ariesanti, et al. "Growth and Performance of Perovskite Semiconductor CsPbX3 (X = Cl, Br, I, or Mixed Halide) for Detection and Imaging Applications." Materials 17, no. 21 (2024): 5360. http://dx.doi.org/10.3390/ma17215360.

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The material family halide perovskites has been critical in recent room-temperature radiation detection semiconductor research. Cesium lead bromide (CsPbBr3) is a halide perovskite that exhibits characteristics of a semiconductor that would be suitable for applications in various fields. In this paper, we report on the correlations between material purification and crystal material properties. Crystal boules of CsPbX3 (where X = Cl, Br, I, or mixed) were grown with the Bridgman growth method. We describe in great detail the fabrication techniques used to prepare sample surfaces for contact dep

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4

Rarenko, Ilariy, Dmytro Korbutyak, Volodymyr Koshkin, et al. "Materials and Photosensor Devices with High Radiation Stability." Advanced Materials Research 1117 (July 2015): 107–13. http://dx.doi.org/10.4028/www.scientific.net/amr.1117.107.

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Semiconductor Hg3In2Te6 crystals and their analogous are solid solutions of In2Te3 and HgTe. Hg3In2Te6 crystals are congruently melted as chemical compound. Like In2Te3 the Hg3In2Te6 crystal has cubic crystal lattice with stoichiometric vacancies in their crystal structure. The electroconductivity, photoconductivity, mechanical, chemical properties of the crystals do not deteriorate after their irradiation by γ-photons with energies up to 1 MeV and doses up to 1018 cm-2 , by electrons with energies up to 300 MeV and doses up to 1019 cm-2 and by mixed reactor irradiation (filtered slow neutrons

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5

Pavlyuk, Volodymyr, Grygoriy Dmytriv, Malgorzata Szyrej, Sergii Levkovets, and Oleh Parasyuk. "A new semiconducting quaternary mixed halogenide: pentathallium dimercury pentabromide tetraiodide, Tl5Hg2Br5I4." Acta Crystallographica Section C Structural Chemistry 70, no. 6 (2014): 550–54. http://dx.doi.org/10.1107/s2053229614009966.

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A novel quaternary mixed halogenide, Tl5Hg2Br5I4, was synthesized by fusion of thallium bromide and mercury iodide in a 5:2 molar ratio. The crystal structure of Tl5Hg2Br5I4represents a new series of composite structures described by the general formulanTlBr*mTl2[HgBr2I2]; in this case,n= 4 andm= 8. Electronic structure calculations indicate that the title compound is a semiconductor.

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6

Galeeva, Alexandra V., Ivan V. Krylov, Konstantin A. Drozdov, et al. "Electron energy relaxation under terahertz excitation in (Cd1− x Zn x )3As2 Dirac semimetals." Beilstein Journal of Nanotechnology 8 (January 17, 2017): 167–71. http://dx.doi.org/10.3762/bjnano.8.17.

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We demonstrate that measurements of the photo-electromagnetic effect using terahertz laser radiation provide an argument for the existence of highly conductive surface electron states with a spin texture in Dirac semimetals (Cd1− x Zn x )3As2. We performed a study on a range of (Cd1− x Zn x )3As2 mixed crystals undergoing a transition from the Dirac semimetal phase with an inverse electron energy spectrum to trivial a semiconductor with a direct spectrum in the crystal bulk by varying the composition x. We show that for the Dirac semimetal phase, the photo-electromagnetic effect amplitude is d

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7

Kuklin, Mikhail S., and Antti J. Karttunen. "Evolutionary Algorithm-Based Crystal Structure Prediction of CuxZnyOz Ternary Oxides." Molecules 28, no. 16 (2023): 5986. http://dx.doi.org/10.3390/molecules28165986.

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Binary zinc(II) oxide (ZnO) and copper(II) oxide (CuO) are used in a number of applications, including optoelectronic and semiconductor applications. However, no crystal structures have been reported for ternary Cu-Zn-O oxides. In that context, we investigated the structural characteristics and thermodynamics of CuxZnyOz ternary oxides to map their experimental feasibility. We combined evolutionary crystal structure prediction and quantum chemical methods to investigate potential CuxZnyOz ternary oxides. The USPEX algorithm and density functional theory were used to screen over 4000 crystal st

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8

Hashimoto, Ai, Hideki Sako, Junichiro Sameshima, et al. "Structural Characterization of a Ga₂O₃Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM Analysis." Materials Science Forum 1004 (July 2020): 505–11. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.505.

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Ga2O3 is a hopeful wide-band-gap semiconductor material for a next-generation power semiconductor. We performed crystal structure analysis on Ga2O3 film on sapphire substrate using cross-sectional transmission electron microscope (TEM) and atomic resolution plan-view scanning transmission electron microscopy (STEM). The TEM analysis suggested that the main Ga2O3 film is composed of κ-Ga2O3 or mixed crystal of κ-Ga2O3 and ε-Ga2O3. But, it is difficult to distinguish these two possibilities only by cross-sectional TEM. Contrast modulation of Ga atomic columns in the atomic resolution HAADF-STEM

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9

Nishitani, Mikihiko, Masahiro Sakai, and Yukihiro Morita. "The Wide band p- type material formed by the thin film with ZnO - NiO mixed crystal system." MRS Proceedings 1538 (2013): 399–404. http://dx.doi.org/10.1557/opl.2013.551.

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ABSTRACTWe study ZnO-NiO mixed crystal thin film as a wide band p-type material for the hetero-junction with ZnO. As for the hetero-junction of the ZnO ( n-type ) and the NiO which have relatively stable p-type semiconductor characteristics, there are issues on the crystallographic mismatch and the band offset of the valence band as well as the conduction band . We made the ZnO-NiO mixed crystal thin film in all composition range with the substrate temperature of 250°C, using magnetron sputtering process and acquired the basic data for the change of electrical conductivity with conduction type

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10

Omatu, Sigeru, Hideo Araki, Toru Fujinaka, et al. "Mixed Odor Classification for QCM Sensor Data by Neural Network." ADCAIJ: Advances in Distributed Computing and Artificial Intelligence Journal 1, no. 2 (2013): 43–48. http://dx.doi.org/10.14201/adcaij2012124348.

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Compared with metal oxide semiconductor gas sensors, quarts crystal microbalance (QCM) sensors are sensitive for odors. Using an array of QCM sensors, we measure mixed odors and classify them into an original odor class beforemixing based on neural networks. For simplicity we consider the case that two kinds of odor are mixed since more than two becomes too complex to analyze the classification results. We have used eight sensors and four kinds of odor are used as the original odors. The neural network used here is a conventional layered neural network. The classification is acceptable althoug

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11

Ballester, A., J. L. Movilla, J. M. Escartín, M. Pi, and J. Planelles. "Configuration interaction approach to Fermi liquid–Wigner crystal mixed phases in semiconductor nanodumbbells." Journal of Applied Physics 112, no. 2 (2012): 024311. http://dx.doi.org/10.1063/1.4737774.

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12

Singh, Diksha, Karol Strzałkowski, Ali Abouais, and Amine Alaoui-Belghiti. "Study of the Thermal Properties and Lattice Disorder Effects in CdTe–Based Crystals: CdBeTe, CdMnTe, and CdZnTe." Crystals 12, no. 11 (2022): 1555. http://dx.doi.org/10.3390/cryst12111555.

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Mixed semiconductor ternary crystals were grown using the Bridgman–Stockbarger method. This is a high–temperature and high–pressure crystal growth method. Cd1–xBexTe crystals were grown in the range of composition 0 < x < 0.1, such as 0.00, 0.01, 0.03, 0.05, and 0.1. The main goal of this paper was to compare the thermal properties of CdBeTe with previously grown CdMnTe and CdZnTe–mixed ternary crystals. The photopyroelectric technique was applied to examine the thermal properties. The thermal diffusivity and effusivity values were obtained after testing all the samples, and the thermal

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13

GONG, JIAN, SHI LIANG BAN, and XI XIA LIANG. "RESONANT TUNNELING IN SEMICONDUCTOR MULTIBARRIER HETEROSTRUCTURES." International Journal of Modern Physics B 16, no. 30 (2002): 4607–19. http://dx.doi.org/10.1142/s0217979202014942.

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The effect of coupling between the electronic transverse motion and longitudinal motion is considered in the theoretical investigation of the resonant tunneling in a semiconductor multi-barriers heterostructure. A numerical calculation is carried out for rectangular and parabolic-well heterostructures consisting of ZnSe/Zn 1-x Cd x Se . The result indicates that the coupling effect results in not only a movement of the resonant peaks but also a reduction of the peak-to-valley ratio in the transmission spectrum. The effect of the electronic transverse motion on the higher-lying resonant states

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14

Bagheri, Samira, and Nurhidayatullaili Muhd Julkapli. "Mixed-phase TiO2 photocatalysis: correlation between phase composition and photodecomposition of water pollutants." Reviews in Inorganic Chemistry 37, no. 1 (2017): 11–28. http://dx.doi.org/10.1515/revic-2016-0001.

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AbstractIn most cases, the combination of both anatase (up to 80%) and rutile (up to 20%) structures in a mixed-phase TiO2 semiconductor results in a better photocatalytic performance compared to the pure phase. The improvement from anatase to rutile is brought about by the enhanced transportation of photogenerated electrons. This consequently results in improved efficiency of the photoelectric and photocurrent conversion. This review highlights the effects of the morphology, particle size, and crystal structure of mixed-phase TiO2 toward the photodegradation of water pollutants. It was demons

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15

Maksimov, S. E., K. O. Yanushkevich, D. I. Tishkevich, and V. E. Borisenko. "Structure and photocatalytic activity of composites of semiconducting nanoparticles in polymethylmethacrylate." Žurnal neorganičeskoj himii 69, no. 6 (2024): 928–34. https://doi.org/10.31857/s0044457x24060153.

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We fabricated and studied composites made of titania (TiO2), zinc oxide (ZnO) or graphitic carbon nitride (g-C3N4) nanoparticles (20–100 nm) in polymethylmethacrylate (PMMA). Nanodispersed powders of these semiconductors were mixed with mechanically grinded PMMA at a weight ratio ranging from 1 : 5 to 1 : 20. The mixture was dissolved in acetone and deposited on to the surface of water. Upon solidification and drying in air porous discs as thick as 50–200 μm were formed. They were found to have a mechanical durability at the semiconductor to PMMA ratio above 1 : 20. Scanning electron microscop

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16

DAS, P. S., P. K. CHAKRABORTY, BANARJI BEHERA, and R. N. P. CHOUDHARY. "CHARACTERIZATION OF LiPb2V5O15 CERAMICS USING IMPEDANCE SPECTROSCOPY." Modern Physics Letters B 23, no. 05 (2009): 755–64. http://dx.doi.org/10.1142/s0217984909018989.

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The polycrystalline sample of LiPb 2 V 5 O 15 was prepared by a mixed oxide method at low temperature (i.e. 550°C). Preliminary structural analysis confirmed the formation of the compound of an orthorhombic crystal system. The impedance parameters of the material were studied using complex impedance spectroscopy (CIS) in a wide temperature (i.e. 30–450°C) and frequency (i.e. 102–106 Hz) range. From the complex impedance plots, grain/grain boundary effects and relaxation phenomenon were observed above 30°C. Study of electrical conductivity suggests that the compound exhibits the negative temper

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17

Niewa, Barbara Schüpp, Larisa Shlyk, Sergej Kryukov, Lance E. De Long, and Rainer Niewa. "Bafe3.39(5)Ru2.61(5)O11 And BaCo1.85(6)Ru4.15(6)O11. Preparation, Crystal Structures, And Magnetic And Transport Properties Of Quaternary Transition Metal Oxoruthenates." Zeitschrift für Naturforschung B 62, no. 6 (2007): 753–58. http://dx.doi.org/10.1515/znb-2007-0601.

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Black plate-like single crystals of BaFe3.39(5)Ru2.61(5)O11 and BaCo1.85(6)Ru4.15(6)O11 were grown from a BaCl2 flux [hexagonal, space group P63/mmc (No. 194), Fe: a = 5.856(1), c = 13.587(1) Å , R1 = 0.029, wR2 = 0.084; Co: a = 5.842(1), c = 13.573(3) Å, R1 = 0.033, wR2 = 0.075]. The crystal structures contain two crystallographic sites with mixed Ru and Fe/Co occupation of different level in octahedral coordination and one site purely occupied by the respective 3d metal. The latter position is in trigonal bipyramidal coordination, with some indication for a displacement of the metal atom tow

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18

Zunger, Alex. "Spontaneous Atomic Ordering in Semiconductor Alloys: Causes, Carriers, and Consequences." MRS Bulletin 22, no. 7 (1997): 20–26. http://dx.doi.org/10.1557/s0883769400033364.

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For many years, it was believed that when two isovalent semiconductors are mixed, they will phase-separate (like oil and water) at low temperature, they will form a solid solution (like gin and tonic) at high temperatures, but they will never produce ordered atomic arrangements. This view was based on the analysis of the solid-liquid equilibria at high temperatures and on empirical observation of phase separation at low temperatures. These observations were further rationalized and legitimized by applying the classic (Hildebrand) solution models, which predicted just this type of behavior. The

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19

DONG, C., J. K. LIANG, C. G. CUI, et al. "STUDY ON THE SUPERCONDUCTIVITY OF Ba2(Y1−xLax)Cu3O7−y." Modern Physics Letters B 02, no. 03n04 (1988): 621–28. http://dx.doi.org/10.1142/s0217984988000254.

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A series of samples with the nominal composition Ba 2( Ba 1−x La x) Cu 3 O 7−y, (0≤x≤1), was synthesized by solid state reaction. An X-ray diffraction study showed that a continuous solid solution exists between Ba 2 YCu 3 O 7−y and Ba 2 LaCu 3 O 7−y and there is a composition induced order-disorder transition from an orthorhombic to a tetragonal structure when x value is near 0.9. All the samples with orthorhombic crystal structure are superconductors with Tc onset above 90K. The transition midpoint temperature decreases smoothly when La content increases. The samples with x≥0.9 have a tetrag

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20

Nandi, Santosh S., Vinayak Adimule, and Basappa C. Yallur. "Synthesis, Structural and Optical Properties of Co Doped Sm<sub>2</sub>O<sub>3</sub> Nanostructures." Advanced Materials Research 1173 (August 25, 2022): 59–69. http://dx.doi.org/10.4028/p-h1j61s.

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In the present investigation Co doped Sm2O3 nanostructures (NS) with different concentrations (1%, 3% and 8%) synthesized by thermal decomposition and surface reduction methods using sodium hydroxide as precipitating agent. Flake-like shaped semiconductor crystal features, morphology, optical absorptivity, chemical composition determined by XRD (X-ray diffraction), SEM (scanning electron microscopy) and UV-Visible. Flake-like morphology of the NS observed in SEM analysis having grain size varies in between 80 and 96 nm. XRD pattern depicted mixed phase of cubic crystal structure with crystalli

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21

Åsbrink, S., and M. Malinowski. "A high-pressure single-crystal X-ray diffraction study of V3O5 including the phase transition at 6.2 GPa." Journal of Applied Crystallography 20, no. 3 (1987): 195–99. http://dx.doi.org/10.1107/s0021889887086837.

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The unit-cell parameters of the mixed-valence oxide V3O5 have been studied as functions of pressure from 0.3 up to 7.5 GPa in a single-crystal experiment involving measurements at 21 different pressure values. A diamond-anvil high-pressure (h.p.) cell of new construction [Malinowski (1987). Submitted to J. Appl. Cryst.] mounted on a four-circle X-ray diffractometer was used. At Pt = 6.25(9) GPa a phase transition was observed at room temperature. This is analogous to the semiconductor-metal transition observed at Tt = 428 K and normal pressure, which implies a change in the ordering of the met

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22

Kubenova, Marzhan M., Kairat A. Kuterbekov, Malik K. Balapanov, Rais K. Ishembetov, Asset M. Kabyshev, and Kenzhebatyr Z. Bekmyrza. "Some Thermoelectric Phenomena in Copper Chalcogenides Replaced by Lithium and Sodium Alkaline Metals." Nanomaterials 11, no. 9 (2021): 2238. http://dx.doi.org/10.3390/nano11092238.

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This review presents thermoelectric phenomena in copper chalcogenides substituted with sodium and lithium alkali metals. The results for other modern thermoelectric materials are presented for comparison. The results of the study of the crystal structure and phase transitions in the ternary systems Na-Cu-S and Li-Cu-S are presented. The main synthesis methods of nanocrystalline copper chalcogenides and its alloys are presented, as well as electrical, thermodynamic, thermal, and thermoelectric properties and practical application. The features of mixed electron–ionic conductors are discussed. I

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23

Sugiura, Takashi, Ryuuichi Tenpaku, Hideki Minoura, and Yasusada Ueno. "Microscopic observation of the grain structure of photoetched CdSexS1 − x solid solution and CdSeCdS mixed crystal semiconductor electrodes." Electrochimica Acta 38, no. 4 (1993): 593–96. http://dx.doi.org/10.1016/0013-4686(93)85018-t.

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Zou, Jian-Ping, Yan Li, Zhang, et al. "Synthesis, Crystal and Band Structures, and Properties of a New Mixed Three-Dimensional Framework Metal Pnictidehalide Semiconductor, (Hg6Sb4)(CdI6)." Inorganic Chemistry 46, no. 18 (2007): 7321–25. http://dx.doi.org/10.1021/ic0624165.

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25

Chun, Sung-Yong. "Changes of Crystal Structure and Microstructure of MoN Coatings in Accordance with Inductively Coupled Plasma Power." Coatings 11, no. 11 (2021): 1351. http://dx.doi.org/10.3390/coatings11111351.

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Nano-crystalline MoN coatings were prepared by inductively coupled plasma magnetron sputtering (ICPMS) according to changing the plasma power from 0 to 200 W. The properties of the coatings were analyzed by X-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, a nano-indentation tester, and a semiconductor characterization system. As the ICP power increased, the crystal structure of the MoN coatings was changed from a mixed phase of γ-Mo2N and α-Mo to a single phase of γ-Mo2N. The residual stress of the MoN coatings was also converted from tensile stress to c

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26

Zhu, Lei, Yang Fan Xiao, and Xun Wang. "Study on the Photocatalytic Oxidation of Reactive Brilliant Blue X-BR with Lanthanum-Modified ZnO-TiO₂." Advanced Materials Research 884-885 (January 2014): 237–41. http://dx.doi.org/10.4028/www.scientific.net/amr.884-885.237.

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The sol-gel method is adopted in this study to prepare the TiO2-composite semiconductor materials doped with ZnO, whose crystal structures are characterized by way of X-ray diffraction and Transmission Electron Microscopy (TEM). It is concluded that the optimal doping amounts of Zn and lanthanum and the calcination temperature are respectively 3%, 0.3% and 500°C. Mixed with water, the photocatalytic oxidation effects of reactive brilliant blue X-BR, taken as the degradation target, was investigated in this study. When the doping amount of lanthanum is 0.3%, the chroma removal rate of the react

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27

Azuma, Yuki, Ziye Zheng, Junichi Motohisa, and Katsuhiro Tomioka. "Selective-Area Growth of Crystal Phase Transition Wurtzite InP Film." ECS Meeting Abstracts MA2024-02, no. 51 (2024): 3586. https://doi.org/10.1149/ma2024-02513586mtgabs.

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Nano light-emitting diodes (LEDs) for next generation display devices are required for high brightness, high luminous efficiency, and high color rendering property in visible color region. Especially, yellow color wavelength still lacks moderate-candidate materials. In case of conventional AlGaInP, the bandgap becomes indirect with increasing Al composition, results in low luminous efficiency. While in case of nitride semiconductors, crystal growth of narrow gap nitride is difficult and also decrease luminous efficiency. With this regards, wurtzite (WZ) phosphide (P)-related semiconductors by

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28

Lu, Jitao, Qingguo Meng, Liangliang Zhang, Yitong Liu, Wenjie Liu, and Xiaomei Zhang. "Single crystal structure, self-assembled nano-structure and semiconductor properties of a sandwich-type mixed (phthalocyaninato)(porphyrinato) europium triple-decker complex." Dyes and Pigments 115 (April 2015): 1–6. http://dx.doi.org/10.1016/j.dyepig.2014.12.005.

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Syahdarani, E., A. H. Ramelan, S. Wahyuningsih, A. Subagio, I. Kartini, and K. R. Kawuri. "ZnO/NiO synthesis and its characterization using solvothermal method." Journal of Physics: Conference Series 2190, no. 1 (2022): 012015. http://dx.doi.org/10.1088/1742-6596/2190/1/012015.

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Abstract This research aims to understand the influence of ZnO and NiO molarity towards its optical and morphological properties. ZnO/NiO was synthesized using solvothermal method with ZnO and (Ni(NO)3)2.6H2O as its main ingredients and dissolved in ethanol. The synthesis of ZnO/NiO using solvothermal method was carried out by modifying the variation of ZnO concentration with the ratio of ZnO and NiO were 1:1, 2:1, and 3:1. ZnO/NiO was used as a semiconductor material which will be analysed for optical properties that occur, one of which was band gap energy. The result was then characterized b

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Polak, M. P., M. J. Winiarski, K. Wittek, and P. Scharoch. "Elastic Properties and the Band Gap ofAlNxP1-xSemiconductor Alloy: A Comparative Study of VariousAb InitioApproaches." Advances in Materials Science and Engineering 2016 (2016): 1–7. http://dx.doi.org/10.1155/2016/1429023.

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Structural and elastic properties ofAlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. Performances of thefinite difference(FD) method and thedensity functional perturbation theory(DFPT) are tested and compared. Both of these methods are applied to two different approaches of alloy simulation, a supercell of 16 and 32 atoms (for zinc-blende and wurtzite structures, resp.) and thealchemical mixing(AM) method, where the pseudopotentials are mixed in an appropriate way to form an alloy. All elastic properties, including the el

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Long, Nguyen Ngoc, Ngo Xuan Dai, and Nguyen Thi Thuc Hien. "SYNTHESIS AND PHOTOLUMINESCENCE STUDIES ON ZINC OXIDE NANOWIRES." ASEAN Journal on Science and Technology for Development 24, no. 1&2 (2017): 205–12. http://dx.doi.org/10.29037/ajstd.208.

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Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method based on thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. The x-ray diffraction (XRD) analysis shows that the ZnO nanowires are highly crystallized and have a typical wurtzite hexagonal structure with lattice constants a = 0.3246 nm and c = 0.5203 nm. The scanning electron microscopy (SEM) images of nanowires indicate that diameters of the ZnO nanowires normally range from 100 to 300 nm and their lengths are several

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Shen, Qiang, Zhijie Lin, Junjie Deng та ін. "Effects of β-Si3N4 Seeds on Microstructure and Performance of Si3N4 Ceramics in Semiconductor Package". Materials 16, № 12 (2023): 4461. http://dx.doi.org/10.3390/ma16124461.

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Among the various ceramic substrate materials, Si3N4 ceramics have demonstrated high thermal conductivity, good thermal shock resistance, and excellent corrosion resistance. As a result, they are well-suited for semiconductor substrates in high-power and harsh conditions encountered in automobiles, high-speed rail, aerospace, and wind power. In this work, Si3N4 ceramics with various ratios of α-Si3N4 and β-Si3N4 in raw powder form were prepared by spark plasma sintering (SPS) at 1650 °C for 30 min under 30 MPa. When the content of β-Si3N4 was lower than 20%, with the increase in β-Si3N4 conten

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Kawawaki, Tokuhisa, Sota Oguchi, and Yuichi Negishi. "Improvement of Photocatalytic Water Splitting Activity by Facet-Selective Loading of Ultrafine Rhodium–Chromium Mixed-Oxide Cocatalyst." ECS Meeting Abstracts MA2024-02, no. 59 (2024): 3987. https://doi.org/10.1149/ma2024-02593987mtgabs.

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<Background> Water-splitting photocatalysts capable of producing hydrogen from light and water have attracted much attention toward the realization of a carbon neutrality. In such semiconductor photocatalysts, there are crystal planes where excited electrons and holes can easily reach.1) Therefore, further enhancement of water splitting activity can be expected if the appropriate co-catalyst can be selectively loaded onto the appropriate crystal face. Although the conventional method of supporting cocatalysts by photoelectrodeposition can selectively support cocatalysts on crystalline su

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Zhang, Guang Lei, Guo Qiang Qin, and Jin Hui Yang. "Preparation and Properties of Heat Durable N:TiO₂ Antibacterial Nano-Ceramics." Key Engineering Materials 477 (April 2011): 453–57. http://dx.doi.org/10.4028/www.scientific.net/kem.477.453.

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As a new type of environmental pollutant reduction technology, semiconductor nano-TiO2 photocatalytic technology has attracted widely attention in recent years. In order to overcome the disadvantage of pure TiO2 photocatalyst in lower utilization of solar energy and heat durability, the sol-gel method followed by co-precipitation method was employed to synthesize ZnO packed N:TiO2 nano-powders, and EDS, XRD, SEM, UV-VIS analysis as well as detection of degradation rate of methyl orange were used to characterize the composition, phase, micro-morphology and the photocatalytic properties of the n

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Li, Ying. "Photoelectric Properties of Titanium Dioxide/Graphene Quantum Dots Semiconductor Material and its Computer Simulation." Journal of Nanoelectronics and Optoelectronics 17, no. 3 (2022): 552–59. http://dx.doi.org/10.1166/jno.2022.3213.

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As an excellent inorganic semi-conductor material, titanium dioxide (TiO2) is widely applied in some photo-induced hardware designs. The energy gap with 3.0 eV to 3.2 eV enables TiO2 to respond only to the incident light of ultraviolet band, while TiO2 can’t effectively utilize visible light. Therefore, TiO2 needs to be modified to reduce the overall energy gap. Graphene quantum dots (GQDs) is adopted to modify TiO2 and further made into photoelectrode hardware devices. In this case, the energy gap of GQDs is measured by cyclic voltammetry, and it reaches only 1.18 eV. GQDs can directly absorb

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Manthiram, Arumugam. "(Invited) Chemical Intricacies of Mixed Ionic-Electronic Conducting Perovskite Oxides." ECS Meeting Abstracts MA2023-02, no. 46 (2023): 2224. http://dx.doi.org/10.1149/ma2023-02462224mtgabs.

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Mixed ionic-electronic conductors (MIEC) play a critical role in electrochemical devices, such as batteries and fuel cells. Ideally, both the electrodes (anode and cathode) should support a fast transport of electrons and the working ions to realize acceptable reaction kinetics and current density/rates. Crystal chemistry and the resulting chemical bonding control the MIEC properties and the device performances ensuing from them. This presentation will illustrate the richness and complexities displayed by perovskite-based MIECs, which are employed as electrodes in solid oxide fuel cells, oxyge

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Liu, Baoyu, Xiaoping Zou, Jin Cheng, et al. "Effect of Low-Concentration Rb+ Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method." Coatings 10, no. 7 (2020): 627. http://dx.doi.org/10.3390/coatings10070627.

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In recent years, perovskite materials have been the subject of great progress in optoelectronic devices. The perovskite layer is the light absorption layer of perovskite solar cells (PSCs), and the majority charge carriers type play a crucial role in the formation of a P–N junction. In this paper, the light absorption layer of PSCs was Rb-mixed at a low concentrations by using a two-step spin-coating method, which could adjust the majority charge carriers type in perovskite films from N-type to P-type, and it has little influence on the crystal structure and light absorption capacity of perovs

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Thuau, Damien. "(Invited) Organic Thin Films Transistors: From Mechanical to Biochemical Sensors." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1287. http://dx.doi.org/10.1149/ma2022-02351287mtgabs.

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Interest in organic electronic materials, and in particular their potential for low-cost fabrication over large areas, led to the development of organic field-effect transistors (OFETs). The potential of OFETs has been demonstrated in a variety of applications, including pixel drivers for displays, bionic skin, wearable electronics and sensitive chemical sensors that can operate in aqueous environments. OFETs use conjugated, semiconducting small molecules and polymers and offer an alternative to inorganic devices for applications in which facile processing on different substrates and tunable e

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Gómez Toledo, Marianela, Sara Lopez Paz, Susana Garcia Martin та Elena Arroyo-de Dompablo. "Computational Investigation of the Potential SOFC Air Electrode YSr₂Cu₂FeO_8-Δ". ECS Meeting Abstracts MA2023-01, № 54 (2023): 78. http://dx.doi.org/10.1149/ma2023-015478mtgabs.

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YBaCuO-type oxides of the YSr2Cu2MO8-δ (M = Co, Fe) systems were previously studied as air electrodes for SOFCs1 and more recently have attracted great attention due to the electrocatalitic properties reported on YSr2Cu2FeO8-δ 2 and La1.5Ba1.5Cu3O7± δ.3 The compound YSr2Cu2FeO7.56 is a p-type semiconductor, mixed valence Fe3+/Fe4+ and Cu2+/Cu3+ oxide, which exhibits an interesting electrochemical behavior associated to catalytic activity in the oxygen reduction reaction (ORR), being a potential air-electrode for solid oxide fuel cells (SOFCs) 2. In this contribution we present a computational

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Yao, Kuo Shan, Jen Jung Hsu, and Chen Yu Chang. "Study on the Photocatalytic Degradation of Wastewater under the Optimal Preparation of the Activated Carbon Supported TiO₂ Thin Film." Advanced Materials Research 356-360 (October 2011): 313–17. http://dx.doi.org/10.4028/www.scientific.net/amr.356-360.313.

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Textile industries usually discharge colored effluents containing various dyes. These dyes usually contain more than one aromatic structure and they are not only difficult to be degraded biologically but also toxic. UV/semiconductor procedure, with advantages including photostability, non-toxicity, affordable price, and insolubility in water, has been studied and used. This aim of this study is to develop photocatalytic reactor with higher removal efficiency. The TiO2 thin film was prepared by Sol-Gel method and coated on the surface of activated carbon to enhance the reaction opportunity and

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Porter, Lisa M., Kunyao Jiang, Jingyu Tang, et al. "(Invited) Epitaxial Growth and Characterization of Ga₂O₃ Polymorphs." ECS Meeting Abstracts MA2023-01, no. 32 (2023): 1829. http://dx.doi.org/10.1149/ma2023-01321829mtgabs.

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Gallium oxide (Ga2O3) is an ultra-wide band gap semiconductor with extraordinary potential for high-power, high-frequency, and high-temperature electronics and UV optoelectronics. The existence of stable and metastable phases, or polymorphs, of Ga2O3 presents challenges and opportunities for future device development. β-Ga2O3 is the thermodynamically stable phase and occurs in melt-grown, single-crystal substrates. The metastable phases, which have been demonstrated in pure- or mixed-phase form in epitaxial films, also possess ultra-wide bandgaps. Intriguing properties, such as ferromagnetism

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Elbadawi, Abdelrahman A., Elsammani A. Shokralla, Mohamed A. Siddig, Obaidallah A. Algethami, Abdullah Ahmed Alghamdi, and Hassan H. E. Idris. "Structural and Dielectric Impedance Studies of Mixed Ionic–Electronic Conduction in SrLaFe1−xMnxTiO6 (x = 0, 0.33, 0.67, and 1.0) Double Perovskites." Ceramics 8, no. 3 (2025): 87. https://doi.org/10.3390/ceramics8030087.

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The structural and electrical properties of double perovskite compounds SrLaFe1−xMnxTiO6−δ (x = 0, 0.33, 0.67, and 1.0) were studied using X-ray diffraction (XRD) and dielectric impedance measurements. The reparation of perovskite compounds was successfully achieved through the precursor solid-state reaction in air at 1250 °C. The purity phase and crystal structures of perovskite compounds were determined by means of the standard Rietveld refinement method using the FullProf suite. The best fitting results showed that SrLaFeTiO6−δ was orthorhombic with space group Pnma, and both SrLaFe0.67Mn0.

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Torregrosa, Adrián J., Emir Karamehmedović, Haroldo Maestre, María Luisa Rico, and Juan Capmany. "Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras." Sensors 20, no. 12 (2020): 3610. http://dx.doi.org/10.3390/s20123610.

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Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-

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Masut, Remo A., Marco A. Sacilotti, Alain P. Roth, and Digby F. Williams. "InP (and GaAs) substrate stabilization by the presence of GaAs (and InP) in a metal-organic vapour-phase epitaxy system." Canadian Journal of Physics 65, no. 8 (1987): 1047–52. http://dx.doi.org/10.1139/p87-172.

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Metal-organic vapour-phase epitaxy (MOVPE) is a well-established technique for semiconductor growth. Like molecular-beam epitaxy, liquid-phase epitaxy, and vapour-phase epitaxy, it requires a stabilized substrate surface prior to growth to obtain a high-quality crystal. Studies of the stabilization of GaAs and InP substrates placed side by side with their interactions under V-hydride flows can provide valuable information. Here we show the effect of exposing GaAs and InP substrates to AsH3 and (or) PH3 in the temperature range from 550 °C to 750 °C, in an MOVPE reactor. The presence of a GaAs

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G., C. De, M. Roy A., Saha S., and Aditya Sukumar. "Semiconductor nanoparticles (CdS, ZnS and ZnxCdS1_x) in reverse micellar media." Journal of Indian Chemical Society Vol. 80, May 2003 (2003): 551–57. https://doi.org/10.5281/zenodo.5839580.

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Department of Chemistry, Alipurduar College, Alipurduar-736 122, India Deparatment of Chemistry, P. K. College, Contai-721 401, India Deparatment of Chemistry, Taki Government College, Taki, India Deparatment of Chemical Technology, University of Calcutta, 92, A. P. C. Road, Kolkata-700 009, India <em>Manuscript received 31 December 2002</em> Nanoparticles CdS, ZnS and mined crystals of Zn<sub>x </sub>Cd<sub>1-x</sub> S can be generated in situ in AOT-heptane-water and CTAB chloroform-water microemulsions using an ultrasonic processor. The nanoparticles exhibit the "quantum size

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Trubaieva, O. G., and M. A. Chaika. "Investigation of band gap width in mixed ZnSxSe1–x crystals." Технология и конструирование в электронной аппаратуре, no. 5-6 (2018): 44–49. http://dx.doi.org/10.15222/tkea2018.5-6.44.

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Scintillators based on ZnSxSe1–x are promising materials for X-ray and γ-ray detection. For optoelectronic devices, it is better to use semiconductor compounds with a direct-zone energy structure with its spectral range lying in the fundamental absorption region. The band gap in such semiconductors is an important parameter that affects the energy resolution, ionization energy, dark current and other scintillation characteristics. The effect of sulfur content on the optical width of the band gap in mixed crystals ZnSxSe1–x is investigated in this paper. The test samples for this study were gro

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Shiojima, Kenji. "(Invited) Characterization of Metal/GaN Schottky Contacts - Review from the Early Days." ECS Meeting Abstracts MA2023-02, no. 30 (2023): 1526. http://dx.doi.org/10.1149/ma2023-02301526mtgabs.

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GaN-based materials have been intensively developed for blue light-emitting-diodes, blue laser diodes, power amplifiers in wireless base-stations, and high-power switching devices. Schottky contacts are one of the most important components in electron device fabrication. The electrical characteristics of GaN Schottky barrier contacts have been continuously studied for more than twenty years as improvement of GaN crystal quality and understanding physics of metal/semiconductor interfaces. In the early days, for the achievement of the high-power and high-temperature operation, thermally stable c

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Lee, Dongho, Hyunho Seok, Sihoon Son, Seokchan Lee, Dayoung Yu, and Taesung Kim. "Regulated and Gradual Polymorph Transition By Thermal and Plasma Treatment on Transition Metal Dichalcogenides." ECS Meeting Abstracts MA2023-02, no. 16 (2023): 1159. http://dx.doi.org/10.1149/ma2023-02161159mtgabs.

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Transition metal dichalcogenides (TMDs) have two different phase structure which exhibit different properties. Generally, it can be classified into 1T (metallic) and 2H (semiconductor) phase structures according to the relative atomic direction of the TMDs. Currently, the utilization of two-dimensional (2D) materials is limited due to the lack of an appropriate phase control method of TMDs. There are several phase control methods reported so far (post-treatment chemical process, lattice deformation of physical crystals due to ion collision, phase control of materials through strain, etc.), but

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Kang, Yu-Bin, Ji-Long Tang, Ke-Xue Li, et al. "Studies of Be, Si doping regulated GaAs nanowires for phase transition and optical properties." Acta Physica Sinica 70, no. 20 (2021): 207804. http://dx.doi.org/10.7498/aps.70.20210782.

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GaAs-based semiconductor doping technology, in which impurity energy levels are introduced into the band gap, can give rise to a decisive effect on its electrical and optical properties. When GaAs material is reduced to one-dimensional nanoscale, due to the increase of specific surface area, wurtzite- zinc blende coexisting structure is prone to appearing. GaAs nanowire doping can not only adjust its electro-optical properties, but also have a significant regulatory effect on its structural phase transition. The effects of beryllium (Be) and silicon (Si) doping on crystal structure and optical

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Voigt, Cooper Augustus, Brent K. Wagner, and Eric M. Vogel. "Molecular Beam Epitaxy of in₂Se₃ Thin Films." ECS Meeting Abstracts MA2022-02, no. 15 (2022): 816. http://dx.doi.org/10.1149/ma2022-0215816mtgabs.

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In2Se3 is a polymorphous metal-chalcogenide system1 where each phase exhibits dramatically different functional properties. α-In2Se3 is a two-dimensional, ferroelectric semiconductor2,3 and has shown promise in low-power, neuromorphic electronic devices4,5. β-In2Se3 is a two-dimensional, centrosymmetric semiconductor and has shown promise in photodetectors6. γ-In2Se3 is a three-dimensional, defect- wurtzite wide bandgap semiconductor that has shown promise as a precursor layer for CuInSe2 solar cells7. Considered together, the bandgaps of these materials range from 1.3eV to 2.5eV8. Understandi

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