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Relevant bibliographies by topics / Semiconductor storage devices

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Academic literature on the topic 'Semiconductor storage devices'

Author: Grafiati

Published: 4 June 2021

Last updated: 30 July 2024

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Journal articles on the topic "Semiconductor storage devices"

1

Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang, and Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys." Materials Science Forum 1107 (December 6, 2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.

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Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These magnetic semiconductors show different conduction types determined primarily by the compositions of the selected amorphous ferromagnetic alloy systems. These findings may pave a new way to realize magnetic semiconductor-based spintronic devices that work at room temperature.

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Zhu, Bin, Liangdong Fan, Naveed Mushtaq, Rizwan Raza, Muhammad Sajid, Yan Wu, Wenfeng Lin, Jung-Sik Kim, Peter D. Lund, and Sining Yun. "Semiconductor Electrochemistry for Clean Energy Conversion and Storage." Electrochemical Energy Reviews 4, no. 4 (October 25, 2021): 757–92. http://dx.doi.org/10.1007/s41918-021-00112-8.

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AbstractSemiconductors and the associated methodologies applied to electrochemistry have recently grown as an emerging field in energy materials and technologies. For example, semiconductor membranes and heterostructure fuel cells are new technological trend, which differ from the traditional fuel cell electrochemistry principle employing three basic functional components: anode, electrolyte, and cathode. The electrolyte is key to the device performance by providing an ionic charge flow pathway between the anode and cathode while preventing electron passage. In contrast, semiconductors and derived heterostructures with electron (hole) conducting materials have demonstrated to be much better ionic conductors than the conventional ionic electrolytes. The energy band structure and alignment, band bending and built-in electric field are all important elements in this context to realize the necessary fuel cell functionalities. This review further extends to semiconductor-based electrochemical energy conversion and storage, describing their fundamentals and working principles, with the intention of advancing the understanding of the roles of semiconductors and energy bands in electrochemical devices for energy conversion and storage, as well as applications to meet emerging demands widely involved in energy applications, such as photocatalysis/water splitting devices, batteries and solar cells. This review provides new ideas and new solutions to problems beyond the conventional electrochemistry and presents new interdisciplinary approaches to develop clean energy conversion and storage technologies. Graphic Abstract

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MUÑOZ, ELIAS. "SEMICONDUCTOR UV SOURCES AND DETECTORS: SOME NON-CONSUMER APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 421–28. http://dx.doi.org/10.1142/s0129156402001344.

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UV emitters and photodetectors based on wide band-gap semiconductors are being investigated and may soon become commercially available. Solid state lighting and information storage are two main applications in the consumer area for these new semiconductor devices. Presently, III-nitrides seem to be the most promising materials for such near UV semiconductor devices. In this work some non-consumer applications are indicated. Biophotonics appears to be a very promising area for such devices.

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Jin, Song. "(Invited) Designing Efficient Photoelectrochemical Solar Energy Conversion Devices and Their Integration with Redox Flow Battery Devices." ECS Meeting Abstracts MA2018-01, no. 31 (April 13, 2018): 1851. http://dx.doi.org/10.1149/ma2018-01/31/1851.

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Due to the intermittent nature of sunlight, practical solar energy utilization systems demand both efficient solar energy conversion and inexpensive large scale energy storage. We will first discuss the rational design and demonstration of efficient photoelectrochemical hydrogen generation systems using efficient semiconductors and earth-abundant catalyst materials. We have further developed novel hybrid solar-charged storage devices that integrate regenerative photoelectrochemical solar cells and redox flow batteries (RFBs) that share the same pair of redox couples. In these integrated solar flow batteries (SFBs), solar energy is absorbed by semiconductor electrodes and photoexcited caries are collected at the semiconductor-liquid electrolyte interface and used to convert the redox couples in the RFB to fully charge up the battery. When electricity is needed, the charged up redox couples will be discharged on carbon electrodes to generate the electricity as in a RFB. We have demonstrated that such SFB devices can be charged under solar light without external electric bias and deliver a high discharge capacity comparable with state-of-the-art RFBs over many cycles. After developing silicon solar cells and high performance solar cells, carefully matching them with various organic or inorganic redox couples, and optimizing several generations of SFB device designs, we have recently achieved integrated SFB device with an overall direct solar-to-output electricity efficiency (SOEE) of 14%. These high performance SFBs can serve as distributed and standalone solar energy conversion and storage systems in remote locations and enable practical off-gird electrification.

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White, Marvin H., Yu (Richard) Wang, Stephen J. Wrazien, and Yijie (Sandy) Zhao. "ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY." International Journal of High Speed Electronics and Systems 16, no. 02 (June 2006): 479–501. http://dx.doi.org/10.1142/s0129156406003801.

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This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effectiveness of floating gate technology – questions, which have sparked renewed interest in SONOS technology. The latter offers a single polysilicon device structure with reduced lithography steps together with compact cell layouts - compatible with 'standard' CMOS technology for cost effectiveness. In addition, SONOS technology offers performance features, such as reduced erase and write voltage levels to ease the design of peripheral memory circuits with a decrease in electric fields and localized charge storage for improved reliability and multi-bit storage, and ease of memory testing. A special feature of SONOS technology is radiation hardness, which makes this technology ideal for advanced Space and Military systems. SONOS devices use ultra-thin tunnel oxides (2nm) and operate with 'modified' Fowler-Nordheim and 'direct' tunneling in both erase and write (program) modes. A thicker tunnel oxide SONOS device (5nm), called the NROM™ device, uses 'hot electron injection for programming and 'hot hole band-to-band tunneling' for erase. The NROM™ device provides spatially isolated, two-bit storage with the possibility of multi-level charge (MLC) storage at each bit location. This paper describes the physical electronics for these device structures and their erase/write, retention and endurance characteristics. In addition, several novel SONOS device structures are discussed as potential candidates for future NVSM.

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Babu, Bobba Phaneedra, Allem Rama Krishna Reddy, Gujjula Pratap, Murra Harshavardhana Reddy, A. Hussien Abbas, Raj Kumar, and J. Praveen. "Comparison Analysis of Semiconductor Characterisation topologies using Energy Recirculation Concept." E3S Web of Conferences 391 (2023): 01189. http://dx.doi.org/10.1051/e3sconf/202339101189.

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Energy recirculation concept in semiconductor device characterization can increase power handling capacity of the source and it will reduce naturally existing high electrical stresses on device under test. The proposed energy recirculation and storage circuits (ERSC) can be employed as a device in-situ testing unit, by storing and recirculating the energy of the storage elements. ERSC enables devices to be checked at full-power pressures without being attached to a high-power load or requiring high power source. ERSC has four active states of operations achieved by the two active switches of the proposed converter. This converter can function in four different modes of operation, namely - soft start, magnetize, charge, and energy recirculation modes. Another advantage of this converter is that the two circuits can be constructed to work synchronously or asynchronously, allowing for the testing of faster or slower devices depending on the performance of the device being tested. In this paper double pulse test, single ended buck boost and cascaded boost -buck ERSC converters are simulated using MATLAB/SIMULINK and based on the results cascaded boost-buck ERSC having better performance compared to existing testing methods.

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Lypkivskyi, K. O., and A. G. Mozharovskyi. "IMPROVEMENT OF A MULTILEVEL RECTIFIER AS PART OF A BOOSTER CHANNEL OF A DC POWER SUPPLY SYSTEM BY DECOMPOSITION OF ITS ELEMENTS." Tekhnichna Elektrodynamika 2021, no. 2 (February 23, 2021): 35–41. http://dx.doi.org/10.15407/techned2021.02.035.

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In power systems with renewable energy sources, the output voltage level depends on a priori unstable meteorological environmental conditions. This requires the introduction of an energy storage device (storage battery) into such systems and the organization of an appropriate booster channel (BC). In the output stage of the BDK, various types of transformer-and-switches executive structure (TSES) are used, in particular, multilevel rectifiers (MLR), one of the quality indicators of which is the efficiency of using semiconductor devices. In order to increase this indicator, it is proposed to perform the decomposition of the MLU from two series-connected blocks, which made it possible to synthesize new circuitry solutions for the TSES of this type. The possibility of achieving the desired accuracy of maintaining the output voltage with a limited number of semiconductor devices has been confirmed on specific examples. References 14, tables 2, figures 4.

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Salaoru, Iulia, and Shashi Paul. "Memory Effect of a Different Materials as Charge Storage Elements for Memory Applications." Advances in Science and Technology 77 (September 2012): 205–8. http://dx.doi.org/10.4028/www.scientific.net/ast.77.205.

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In recent years, the interest in the application of organic materials in electronic devices (light emitting diodes, field effect transistors, solar cells), has shown a rapid increase. Polymer memory devices (PDMs) is a very recent addition to the organic electronics. The polymer memory devices can be fabricated by depositing a blend (an admixture of organic polymer, small organic molecules and metal or semiconductor nanoparticles) between two metal electrodes. We demonstrate the memory effect in the device with simple structure based on blend of polymer with different materials like ionic compound (NaCl), ferroelectrical nano-particles (BaTiO3) and small organic molecules In 2007 Paul has proposed a model to explain memory effect a switching between two distinctive conductivity states when voltage is applied based on electrical dipole formation in the polymer matrix. Here, we investigate if our memory devices based on different types of materials are fitted with the proposed model.

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Che, Yongli, Yating Zhang, Xiaolong Cao, Xiaoxian Song, Mingxuan Cao, Haitao Dai, Junbo Yang, Guizhong Zhang, and Jianquan Yao. "Low operating voltage ambipolar graphene oxide-floating-gate memory devices based on quantum dots." Journal of Materials Chemistry C 4, no. 7 (2016): 1420–24. http://dx.doi.org/10.1039/c5tc04007h.

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Lingalugari, Murali, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Multi-Bit Quantum Dot Nonvolatile Memory (QDNVM) Using Cladded Germanium and Silicon Quantum Dots." International Journal of High Speed Electronics and Systems 24, no. 03n04 (September 2015): 1550003. http://dx.doi.org/10.1142/s0129156415500032.

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In this paper, we are experimentally demonstrating the multi-bit storage of a nonvolatile memory device with cladded quantum dots as the floating gate. These quantum dot nonvolatile memory (QDNVM) devices were fabricated by using standard complementary metal-oxide-semiconductor (CMOS) process. The quantum dots in the floating gate region assembled using site-specific selfassembly (SSA) technique. Quantum mechanical simulations of this device structure are also presented. The experimental results show that the voltage separation between the bits was 0.15V and the voltage pulses required to write these bits were 11.7V and 30V. These devices demonstrated the larger write voltage separation between the bits.

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Dissertations / Theses on the topic "Semiconductor storage devices"

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Sudirgo, Stephen. "Quantum and spin-based tunneling devices for memory systems /." Link to online version, 2006. https://ritdml.rit.edu/dspace/handle/1850/2066.

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Chan, Wan Tim. "CMOS-compatible zero-mask one time programmable (OTP) memory design /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20CHANW.

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Barclay, Martin Jared. "Electrical switching properties of ternary and layered chalcogenide phase-change memory devices." [Boise, Idaho] : Boise State University, 2009. http://scholarworks.boisestate.edu/td/67/.

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Garud, Niharika Triplett Gregory Edward. "Shallow trench isolation process in microfabrication for flash (NAND) memory." Diss., Columbia, Mo. : University of Missouri-Columbia, 2008. http://hdl.handle.net/10355/5622.

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Thesis (M.S.)--University of Missouri-Columbia, 2008.
The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on September 2, 2008) Includes bibliographical references.

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Ketrick, Robert Paul. "Design, fabrication and implementation of a hash table processor /." Online version of thesis, 1987. http://hdl.handle.net/1850/10497.

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Fullem, Travis Z. "Radiation detection using single event upsets in memory chips." Diss., Online access via UMI:, 2006.

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Fang, Jun. "Design of an ATM switch and implementation of output scheduler /." Title page, contents and abstract only, 1999. http://web4.library.adelaide.edu.au/theses/09ENS/09ensf211.pdf.

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Lee, Yung-Huei. "Dual-carrier charge transport and damage formation of LPCVD nitride for nonvolatile memory devices /." The Ohio State University, 1986. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487322984316841.

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Barsatan, Randy. "CMOS-compatible nonvolatile memories for radio frequency identification (RFID) applications /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ECED%202006%20BARSAT.

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Xiang, Jing. "Electrofunctional ferrocene-containing metallopolymers for organic lithium-ion battery and organic resistive memory applications." HKBU Institutional Repository, 2016. https://repository.hkbu.edu.hk/etd_oa/286.

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This thesis is dedicated to developing three different types of ferrocene-containing polymers for organic lithium-ion battery and resistive memory applications. Chapter 1 gives an overview of organic cathode-active materials, polymeric resistive memories and ferrocene-containing polymers. Furthermore, the previously reported applications of ferrocene-containing polymeric systems in electrochemical energy storage and electronical memory devices were also comprehensively summarized. In chapter 2, conjugated ferrocene-containing side-chain metallopolymers PFcFE1, PFcFE2, PFcFE3 and PFcFE4 were designed and synthesized via Sonogashira cross-coupling polycondensation. The charging-discharging processes of triphenyamine-based PFcFE1 and thiophene-modified PFcFE4 have been successfully studied as cathode materials. PFcFE1 composite electrode showed a capacity of 90 mAh g-1 and the cathode composed of PFcFE4 retained over 90% of the initial capacity after 100 charging-discharging cycles at 10 C. These results demonstrate the great potentials of these ferrocene-containing side-chain polymers as active cathode materials for organic lithium-ion battery applicaitons. Besides, all prepared ferrocene-containing metallopolymers PFcFE1, PFcFE2, PFcFE3 and PFcFE4 also exhibited nonvolatile resistive switching behaviors with the flash memory effect of PFcFE1, PFcFE2 and PFcFE3 as well as the WORM memory feature of PFcFE4, indicating the easily tuned memory properties by changing the chemical structures of the active polymeric backbones. It is also worth noting that the ITO/PFcFE1/Al memory device showed a high ON/OFF current ratio of 103 to 104, a low switch-on voltage of -1.0 V, a long retention time of 1000 s and a large read cycle number up to 105, which is superior to other reported ferrocene-containing memory examples. Chapter 3 focuses on the development of non-conjugated ferrocene-containing copolymers PVFVM1, PVFVM1-1, PVFVM2, PVFVM3, PVFVM4, PVFVM5 and PVFVM6 based on different heteroaromatic moieties which were prepared by AIBN initiated chain addition polymerization. The as-prepared copolymers PVFVM1 and PVFVM1-1 exhibited electrochemical characteristics of both ferrocene and triphenylamine pendants with reversible multiple redox waves at the half potentials of E1/2 = --0.06, 0.30, and 0.42 V (vs. Fc/Fc+). Notably, the composite electrode based on PVFVM1 afforded a discharge capacity of 102 mAh g--1 at 10 C, corresponding to 98% of its theoretical capacity. The cycle endurances of the active polymer electrodes composed of PVFVM1 or PVFVM1-1 were both evaluated for over 50 numbers and no significant capacity reduction over cycles were observed. On the other hand, initial I-V results of memory devices based on PVFVM1, PVFVM1-1, PVFVM2, PVFVM3, PVFVM4 and PVFVM6 also revealed their huge potentials in electronic information storage. The stability and reproducibility of the corresponding memory devices based on these materials will be futher evaluated in the near future. We used 1,1'-ferrocenediboronic acid bis(pinacol) ester to develop conjugated ferrocene-containing main-chain metallopolymers in chapter 4. All these rational designed metallopolymers FcMMP1, FcMMP2, FcMMP3 and FcMMP4 with one or two ferrocene moieties were produced via Suzuki cross-coupling polycondensation. Their structural information, molecular masses, photophysical features and thermal properties have been well studied. Electrochemical performances of the formed polymers were also examined to clarify their potential as cathode-active materials. Other charge-storage characteristics and switching behaviors of these prepared ferrocene-containing main-chain metallopolymers for organic battery and memory applications are under further investigation.

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Books on the topic "Semiconductor storage devices"

1

Sharma, Ashok K. Semiconductor memories: Technology, testing, and reliability. Piscataway, N.J: IEEE Press, 1997.

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Sharma, Ashok K. Advanced semiconductor memories: Architectures, designs, and applications. Piscataway, NJ: IEEE Press, 2003.

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Prince, Betty. Semiconductor memories: A handbook of design manufacture and application. 2nd ed. Chichester: Wiley, 1995.

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Prince, Betty. Semiconductor memories: A handbook of design, manufacture, and application. 2nd ed. Chichester: Wiley, 1991.

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Corporation, Dallas Semiconductor, ed. Book of DS199x touch memory standards. Dallas, Tex: Dallas Semiconductor, 1992.

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A, Kosarev I͡U. Ėlektricheski izmeni͡aemye PZU. Leningrad: Ėbergoatomizdat, Leningradskoe otd-nie, 1985.

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Adams, R. Dean. High performance memory testing: Design principles, fault modeling, and self-test. Boston: Kluwer Academic, 2003.

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Konopelʹko, V. K. Nadezhnoe khranenie informat͡s︡ii v poluprovodnikovykh zapominai͡u︡shchikh ustroĭstvakh. Moskva: "Radio i svi͡a︡zʹ, 1986.

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Calif.) IEEE International Memory Workshop (5th 2013 Monterey. 2013 5th IEEE International Memory Workshop (IMW): Monterey, California, 26-29 May 2013. Piscataway, NJ: IEEE, 2013.

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Sharma, Ashok K. Semiconductor memories: Technology, testing, and reliability. New York: IEEE, the Institute of Electrical and Electronics Engineers, 1997.

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Book chapters on the topic "Semiconductor storage devices"

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Mondal, Monojit, Avik Sett, Dipak Kumar Goswami, and Tarun Kanti Bhattacharyya. "Synthesis of Graphene Nanocomposites Toward the Enhancement of Energy Storage Performance for Supercapacitors." In Sub-Micron Semiconductor Devices, 211–34. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003126393-14.

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Bardés, D., and R. Alcubilla. "Analysis of Charge Storage in Polysilicon Contacts." In Simulation of Semiconductor Devices and Processes, 293–96. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_72.

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Soosaimanickam, Ananthakumar, Saravanan Krishna Sundaram, and Moorthy Babu Sridharan. "Chemical Aspects of Ligand Exchange in Semiconductor Nanocrystals and Its Impact on the Performance of Future Generation Solar Cells." In Energy Harvesting and Storage Devices, 108–31. New York: CRC Press, 2023. http://dx.doi.org/10.1201/9781003340539-5.

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Diez, S., H. J. Ehrke, U. Feiste, R. Ludwig, E. Patzak, C. Schmidt, and H. G. Weber. "All-Optical Semiconductor Switching Devices for Applications in Optical Communication Systems." In Unconventional Optical Elements for Information Storage, Processing and Communications, 173–82. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4096-6_19.

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Pushparaj, Victor L., Subbalakshmi Sreekala, Omkaram Nalamasu, and Pulickel M. Ajayan. "Flexible Energy Storage Devices Using Nanomaterials." In Semiconductor Nanomaterials for Flexible Technologies, 227–45. Elsevier, 2010. http://dx.doi.org/10.1016/b978-1-4377-7823-6.00008-8.

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TADA, K., and J. L. R. LARAYA. "Reduction of the Storage Time of a Transistor Using a Schottky-Barrier Diode." In Semiconductor Devices: Pioneering Papers, 447–48. WORLD SCIENTIFIC, 1991. http://dx.doi.org/10.1142/9789814503464_0055.

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Jahed, Farzin Michael. "Semiconductor Storage Devices in Computing and Consumer Applications." In Digital Design and Fabrication, 6–1. CRC Press, 2017. http://dx.doi.org/10.1201/9780849386046-6.

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Jena, Debdeep. "And off We Go!" In Quantum Physics of Semiconductor Materials and Devices, 3–10. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198856849.003.0001.

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Abstract This chapter provides a broad overview of the importance of semiconductors in the creation, storage, and movement of information or data, and in applications ranging from clean energy, medicine to space exploration. It outlines the science and applications of semiconductors, and discusses the organization of the book, and how best to use it.

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"Composite graphene/semiconductor nanostructures for energy storage." In Nanostructured Semiconductor Oxides for the Next Generation of Electronics and Functional Devices, 213–66. Elsevier, 2014. http://dx.doi.org/10.1533/9781782422242.213.

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Paul, Raj, Shahnaz Kossar, and Majahid ul Islam. "BISMUTH FERRITE BASED APPLICATIONS." In Futuristic Trends in Physical Sciences Volume 3 Book 4, 115–38. Iterative International Publishers, Selfypage Developers Pvt Ltd, 2024. http://dx.doi.org/10.58532/v3bkps4p4ch1.

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With the increase in the need for higher data storage density, the recent focus in semiconductor research includes the fabrication of efficient non-volatile memory (NVM) devices. NVM are the storage devices that can retrieve the information even when external power is halted. Resistive random-access memory (ReRAM), which is category of NVM has promising futuristic applications due to its significant characteristics such as low power consumption and fast read/write processing and simplicity in device structure. Bismuth ferrite (BFO) was the most studied material which were deposited using sol gel method, spray pyrolysis technique and Hydrothermal/Solvothermal Synthesis at 576K. The structural analysis of the prepared BFO thin films shows rhombohedral perovskite structure with R3c space group.Bismuth Ferrite stands as an intriguing multiferroic material with exciting potential in various technological applications. Its combination of ferroelectricity and antiferromagnetism offers unique possibilities for developing multifunctional devices with electric and magnetic control. As researchers continue to explore its properties and overcome challenges, Bismuth Ferrite is poised to play a significant role in advancing modern electronics, energy harvesting systems, and information storage technologies.

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Conference papers on the topic "Semiconductor storage devices"

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Lenth, Wilfried, W. J. Kozlovsky, and W. P. Risk. "Blue Laser Devices for Optical Data Storage." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/ods.1991.wa1.

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Presently, optical data storage systems are based on the use of near infrared GaAIAs diode lasers operating at wavelengths of 780 - 830 nm. Substantial advances of the areal storage density are possible by using lasers in the blue - green wavelength range. Such blue - green laser sources can be developed by making use of nonlinear optical processes for frequency upconversion of existing state-of-the-art III-V semiconductor lasers. These approaches circumvent the severe fundamental material fabrication problems associated with the potential development of blue semiconductor injection lasers.

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"Advanced Semiconductor Devices for Battery Energy Storage." In 2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES). IEEE, 2020. http://dx.doi.org/10.1109/ieses45645.2020.9210630.

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Lavenier, Dominique. "DNA Storage: Synthesis and Sequencing Semiconductor Technologies." In 2022 IEEE International Electron Devices Meeting (IEDM). IEEE, 2022. http://dx.doi.org/10.1109/iedm45625.2022.10019424.

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Bartolini, Robert A. "High-Power Diode Laser Arrays." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/ods.1989.wa1.

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Semiconductor diode lasers have been the preferred recording source for virtually every optical data storage system since their first reported use nearly a decade ago.1,2,3 Highly reliable, low-power devices are in wide use in consumer CD players while higher-power versions are used in write-once-read-many-times systems. With the emergence of Magneto-Optic media, higher demands are being placed on the power requirements for these devices due to the addition of the media erase cycle. In addition, there has always been a desire and, in many systems, a pressing need to improve the performance of the semiconductor diode laser in such areas as wavelength; mode stability and coherence (both spatial and temporal); beam divergence; power efficiency; and multiple sources on a single monolithic chip.4 The techniques and structures used to achieve diode laser performance improvements in these areas will be reviewed and discussed. In particular, a new class of grating surface emitter lasers5 allows one- and two-dimensional array geometries,6 with inherent stable, single-frequency operation imparted by the grating. These devices offer the advantages of narrow beam divergence, as well as the possibility of electronic steering of the beam. These properties may lead to new classes of high-performance, compact recording systems.

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Guedes, Andre F. S., and Simone Tartari. "New organic semiconductor materials applied in transparent flexible organic photovoltaic solar cells." In Energy Harvesting and Storage: Materials, Devices, and Applications XI, edited by Achyut K. Dutta, Palani Balaya, and Sheng Xu. SPIE, 2021. http://dx.doi.org/10.1117/12.2585244.

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Bloomer, Iris, Dale A. Harrison, Shiva Prakash, Kai Zhang, and Sean Lian. "Cross-linking thin film characterization technique for data storage, semiconductor, and flat panel display devices." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by John C. Stover. SPIE, 1999. http://dx.doi.org/10.1117/12.343702.

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Risk, W. P. "Compact blue laser devices." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.fd2.

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There has recently been much interest in compact sources of blue and green radiation for a wide variety of uses, including optical data storage, color displays, and undersea optical communications. The advent of powerful semiconductor diode lasers has stimulated the development of miniature blue laser devices based on nonlinear frequency upconversion of the laser diode radiation. Efficient generation of blue/green light requires finding compatible combinations of lasers (e.g., semiconductor diode lasers or diode pumped solid state lasers) and nonlinear materials which can be combined in practical device configurations to produce visible light by processes such as second harmonic generation and sum frequency mixing.

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Lin, Ching-Fuh. "Selected Multi-Wavelength Oscillation of a Semiconductor Laser in an External Cavity." In Semiconductor Lasers: Advanced Devices and Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/slada.1995.tue.8.

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A multi-wavelength laser source is important for applications in areas such as wavelength-division multiplexing (WDM), interferometry, lidar and optical data storage. Simultaneous oscillation of multipe wavelengths have been demonstrated in several methods including spatially chirped Bragg reflector vertical cavity surface emitting laser (VCSEL) arrays,1 multichannel grating cavity (MGC) laser,2 multistripe array grating integrated (MAGIC) laser,3 and multi-wavelength DFB laser array by control selective area MOVPE.4 In those devices, arrays are required for the generation of multi-wavelength oscillation. Each array element is responsible for its individual wavelength oscillation. In this work, it is demonstrated that a single-stripe Fabry-Perot laser diode is able to oscillate at selected multiple wavelengths with a wavelength separation ≥1.3 nm, several times larger than the Fabry-Perot longitudinal mode spacing.

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Ondrejka, P., M. Kemeny, V. Rehacek, M. Dubina, I. Hotovy, and M. Mikolasek. "MoS2 Supercapacitors for Energy Storage Applications: Evaluation Of Morphological Factor." In 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE, 2020. http://dx.doi.org/10.1109/asdam50306.2020.9393838.

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Morgan, Adam, Leila Choobineh, David Fresne, and Douglas C. Hopkins. "Numerical and Experimental Determination of Temperature Distribution in 3D Stacked Power Devices." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74222.

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During the last few decades, the microelectronics packaging industry has moved into the 2.5D to 3D space for increased density, functionality, and speed. Similar concepts and ideas for developing 2.5D to 3D power electronics packaging are desired to achieve even greater efficiency and power density over conventional power electronics packaging methods. Wide-band gap (WBG) semiconductors, such as SiC and GaN, have accelerated the ability to shrink the volumetric size and weight of these power conversion systems, and thus improve overall power density metrics, due to their inherent high frequency, high temperature, and high voltage capabilities. WBG power semiconductor devices, with these attributes, thus make themselves excellent candidates for more aggressive packaging, compared to Si-derived packaging, in order to not only take full advantage of the WBG device ratings, but also to achieve high power densities of the overall power conversion systems. Already different/multiple power semiconductor devices are being combined by processing them together on the same die to boost electrical performance and increase power density. It can be assumed that further levels of integration will be sought after for the next levels of packaging to enable similar gains, especially with the advent of double side solderable die. The 3D stacking of die, components, and substrates creates the question of how well will each of these perform in close proximity to each other. This work focuses on the numerical simulation and experimental measurements to predict the temperature distribution of power converters built in a stacked fashion. Thermal models of a stacked power electronic switching unit — a silicon controlled rectifier and anti-parallel diode — are modeled under the assumption of equally sized die. Temperature field maps are generated for 20W to 250W of power dissipations across the power semiconductor die. Thermal models are then compared with matching experimental setups to observe the effect of switching unit placement attached to a given substrate on the die junction temperatures for various scenarios of thermal crosstalk. Results from this work are expected to aid in the development 2.5D to 3D power electronic packaging by predicting thermal performance of stacked, ultra-dense, WBG device -based packages.

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