Dissertations / Theses on the topic 'Semiconductor storage devices'
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Sudirgo, Stephen. "Quantum and spin-based tunneling devices for memory systems /." Link to online version, 2006. https://ritdml.rit.edu/dspace/handle/1850/2066.
Full textChan, Wan Tim. "CMOS-compatible zero-mask one time programmable (OTP) memory design /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20CHANW.
Full textBarclay, Martin Jared. "Electrical switching properties of ternary and layered chalcogenide phase-change memory devices." [Boise, Idaho] : Boise State University, 2009. http://scholarworks.boisestate.edu/td/67/.
Full textGarud, Niharika Triplett Gregory Edward. "Shallow trench isolation process in microfabrication for flash (NAND) memory." Diss., Columbia, Mo. : University of Missouri-Columbia, 2008. http://hdl.handle.net/10355/5622.
Full textThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on September 2, 2008) Includes bibliographical references.
Ketrick, Robert Paul. "Design, fabrication and implementation of a hash table processor /." Online version of thesis, 1987. http://hdl.handle.net/1850/10497.
Full textFullem, Travis Z. "Radiation detection using single event upsets in memory chips." Diss., Online access via UMI:, 2006.
Find full textFang, Jun. "Design of an ATM switch and implementation of output scheduler /." Title page, contents and abstract only, 1999. http://web4.library.adelaide.edu.au/theses/09ENS/09ensf211.pdf.
Full textLee, Yung-Huei. "Dual-carrier charge transport and damage formation of LPCVD nitride for nonvolatile memory devices /." The Ohio State University, 1986. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487322984316841.
Full textBarsatan, Randy. "CMOS-compatible nonvolatile memories for radio frequency identification (RFID) applications /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ECED%202006%20BARSAT.
Full textXiang, Jing. "Electrofunctional ferrocene-containing metallopolymers for organic lithium-ion battery and organic resistive memory applications." HKBU Institutional Repository, 2016. https://repository.hkbu.edu.hk/etd_oa/286.
Full textYuen, Kam Hung. "A nano-scale double-gate flash memory /." View abstract or full-text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20YUEN.
Full textBalasubramanian, Mahesh. "Phase change memory : array development and sensing circuits using delta-sigma modulation /." [Boise, Idaho] : Boise State University, 2009. http://scholarworks.boisestate.edu/td/44/.
Full textMcGeever, Michael K. "Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch /." Title page, contents and abstact only, 1995. http://web4.library.adelaide.edu.au/theses/09PH/09phm1449.pdf.
Full textAkeyo, Oluwaseun M. "ANALYSIS AND SIMULATION OF PHOTOVOLTAIC SYSTEMS INCORPORATING BATTERY ENERGY STORAGE." UKnowledge, 2017. http://uknowledge.uky.edu/ece_etds/107.
Full textLashway, Christopher R. "Resilient and Real-time Control for the Optimum Management of Hybrid Energy Storage Systems with Distributed Dynamic Demands." FIU Digital Commons, 2017. https://digitalcommons.fiu.edu/etd/3515.
Full textWu, Weimin. "Materials for organic memory devices." HKBU Institutional Repository, 2009. http://repository.hkbu.edu.hk/etd_ra/1084.
Full textChen, Danti. "Local electron transport of organic semiconducting monolayers /." Connect to online version, 2009. http://ada.mtholyoke.edu/setr/websrc/pdfs/www/2009/363.pdf.
Full textJun, Zhang, Zhang Qishan, Zhang Zhihui, and Huang Jian. "A New Approach to Telemetry Data Decomposition and Analysis Based on Large-Capacity Semiconductor RAM." International Foundation for Telemetering, 1993. http://hdl.handle.net/10150/611858.
Full textWith the development of microelectronics and computer technology, telemetry computer systems are demanded to provide larger storage capacity and higher storage data rate than ever before. This paper fully considers various factors of a high-speed PCM fiber-optic telemetry system such as data format, data rate, data storage, the width of data storage, storage data rate. All these considerations lead to a new scheme with a semiconductor RAM and a dedicated program as its basic idea. This scheme chooses 1Mbits or 4Mbits static-RAM chips to implement the telemetry data storage device with a total capacity of 4Mbytes, 16Mbytes, or 64Mbytes. The software running on COMPAQ 386/25M or its compatibles is written in Turbo C 2. 0 to fetch, decompose, display and process data stored in the large-capacity RAM. The main task of the system processing software is to identify the flag words of frame sync-code -pattern and then demultiplex the data into separate channel data to be stored in the disk. Besides the ability to recognize specific data format, the software can also rectify data confusion to some extent. The scheme has already been proved to be efficient to receive large capacity of data with features of high data rate, high data storage in a short time.
Gray, Jordan D. "Application of Floating-Gate Transistors in Field Programmable Analog Arrays." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7540.
Full textHorikawa, Tsuyoshi. "A study of advanced integrated semiconductor device and process technologies for data storage and transmission." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215222.
Full textKovaltchouk, Thibaut. "Contributions à la co-optimisation contrôle-dimensionnement sur cycle de vie sous contrainte réseau des houlogénérateurs directs." Thesis, Cachan, Ecole normale supérieure, 2015. http://www.theses.fr/2015DENS0033/document.
Full textThe work of this PhD thesis deals with the minimization of the per-kWh cost of direct-drive wave energy converter, crucial to the economic feasibility of this technology. Despite the simplicity of such a chain (that should provide a better reliability compared to indirect chain), the conversion principle uses an oscillating system (a heaving buoy for example) that induces significant power fluctuations on the production. Without precautions, such fluctuations can lead to: a low global efficiency, an accelerated aging of the fragile electrical components and a failure to respect power quality constraints. To solve these issues, we firstly study the optimization of the direct drive wave energy converter control in order to increase the global energy efficiency (from wave to grid), considering conversion losses and the limit s from the sizing of an electrical chain (maximum force and power). The results point out the effect of the prediction horizon or the mechanical energy into the objective function. Production profiles allow the study of the flicker constraint (due to grid voltage fluctuations) linked notably to the grid characteristics at the connection point. Other models have also been developed to quantify the aging of the most fragile and highly stressed components, namely the energy storage system used for power smoothing (with super capacitors or electrochemical batteries Li-ion) and power semiconductors.Finally, these aging models are used to optimize key design parameters using life-cycle analysis. Moreover, the sizing of the storage system is co-optimized with the smoothing management
Yang, Yang. "The retention reliability of scaled SONOS devices /." Diss., 1999. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:9935187.
Full textWang, Yu. "Uniform and localized charge-trapping in SONOS nonvolatile memory devices /." Diss., 2005. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3167086.
Full textWrazien, Stephen J. "Characterization of SONOS nonvolatile semiconductor memory (NVSM) devices for space and military applications /." Diss., 2005. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3167087.
Full textBu, Jiankang. "Polysilicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memory devices design, fabrication and characterization /." Diss., 2001. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3010398.
Full textLee, Jong Jin Kwong Dim-Lee. "A study on the nanocrystal floating-gate nonvolatile memory." 2005. http://repositories.lib.utexas.edu/bitstream/handle/2152/1975/leej77040.pdf.
Full textLee, Jong Jin. "A study on the nanocrystal floating-gate nonvolatile memory." Thesis, 2005. http://hdl.handle.net/2152/1975.
Full textLiu, Yueran 1975. "Novel flash memory with nanocrystal floating gate." Thesis, 2006. http://hdl.handle.net/2152/2819.
Full textHan, Jeong Hee. "Electrical characterization of doped strontium titanate thin films for semiconductor memories." Thesis, 2002. http://wwwlib.umi.com/cr/utexas/fullcit?p3099459.
Full textKhan, Faraz I. "Endurance characterization and improvement of floating gate semiconductor memory devices." 2009. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051734.
Full textSarkar, Joy 1977. "Non-volatile memory devices beyond process-scaled planar Flash technology." Thesis, 2007. http://hdl.handle.net/2152/3666.
Full textTang, Shan 1975. "Protein-mediated nanocrystal assembly for floating gate flash memory fabrication." 2008. http://hdl.handle.net/2152/18156.
Full texttext
McGeever, Michael K. "Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch / Michael K. McGeever." Thesis, 1995. http://hdl.handle.net/2440/19075.
Full textxvi, 174 leaves : ill. ; 30 cm.
This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical.
Thesis (M.Eng.Sc.)--University of Adelaide, Dept. of Electrical & Electronic Engineering, 1996?
Heng, C. L., Wee Kiong Choi, Wai Kin Chim, L. W. Teo, Vincent Ho, W. W. Tjiu, and Dimitri A. Antoniadis. "Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals." 2002. http://hdl.handle.net/1721.1/3969.
Full textSingapore-MIT Alliance (SMA)
Teo, L. W., Van Tai Ho, M. S. Tay, Y. Lei, Wee Kiong Choi, Wai Kin Chim, Dimitri A. Antoniadis, and Eugene A. Fitzgerald. "Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device." 2003. http://hdl.handle.net/1721.1/3712.
Full textSingapore-MIT Alliance (SMA)