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Journal articles on the topic 'Semiconductor storage devices'
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Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang, and Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys." Materials Science Forum 1107 (December 6, 2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.
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Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These magnetic semiconductors show different conduction types determined primarily by the compositions of the selected amorphous ferromagnetic alloy systems. These findings may pave a new way to realize magnetic semiconductor-based spintronic devices that work at room temperature.
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Zhu, Bin, Liangdong Fan, Naveed Mushtaq, Rizwan Raza, Muhammad Sajid, Yan Wu, Wenfeng Lin, Jung-Sik Kim, Peter D. Lund, and Sining Yun. "Semiconductor Electrochemistry for Clean Energy Conversion and Storage." Electrochemical Energy Reviews 4, no. 4 (October 25, 2021): 757–92. http://dx.doi.org/10.1007/s41918-021-00112-8.
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AbstractSemiconductors and the associated methodologies applied to electrochemistry have recently grown as an emerging field in energy materials and technologies. For example, semiconductor membranes and heterostructure fuel cells are new technological trend, which differ from the traditional fuel cell electrochemistry principle employing three basic functional components: anode, electrolyte, and cathode. The electrolyte is key to the device performance by providing an ionic charge flow pathway between the anode and cathode while preventing electron passage. In contrast, semiconductors and derived heterostructures with electron (hole) conducting materials have demonstrated to be much better ionic conductors than the conventional ionic electrolytes. The energy band structure and alignment, band bending and built-in electric field are all important elements in this context to realize the necessary fuel cell functionalities. This review further extends to semiconductor-based electrochemical energy conversion and storage, describing their fundamentals and working principles, with the intention of advancing the understanding of the roles of semiconductors and energy bands in electrochemical devices for energy conversion and storage, as well as applications to meet emerging demands widely involved in energy applications, such as photocatalysis/water splitting devices, batteries and solar cells. This review provides new ideas and new solutions to problems beyond the conventional electrochemistry and presents new interdisciplinary approaches to develop clean energy conversion and storage technologies. Graphic Abstract
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MUÑOZ, ELIAS. "SEMICONDUCTOR UV SOURCES AND DETECTORS: SOME NON-CONSUMER APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 421–28. http://dx.doi.org/10.1142/s0129156402001344.
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UV emitters and photodetectors based on wide band-gap semiconductors are being investigated and may soon become commercially available. Solid state lighting and information storage are two main applications in the consumer area for these new semiconductor devices. Presently, III-nitrides seem to be the most promising materials for such near UV semiconductor devices. In this work some non-consumer applications are indicated. Biophotonics appears to be a very promising area for such devices.
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Jin, Song. "(Invited) Designing Efficient Photoelectrochemical Solar Energy Conversion Devices and Their Integration with Redox Flow Battery Devices." ECS Meeting Abstracts MA2018-01, no. 31 (April 13, 2018): 1851. http://dx.doi.org/10.1149/ma2018-01/31/1851.
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Due to the intermittent nature of sunlight, practical solar energy utilization systems demand both efficient solar energy conversion and inexpensive large scale energy storage. We will first discuss the rational design and demonstration of efficient photoelectrochemical hydrogen generation systems using efficient semiconductors and earth-abundant catalyst materials. We have further developed novel hybrid solar-charged storage devices that integrate regenerative photoelectrochemical solar cells and redox flow batteries (RFBs) that share the same pair of redox couples. In these integrated solar flow batteries (SFBs), solar energy is absorbed by semiconductor electrodes and photoexcited caries are collected at the semiconductor-liquid electrolyte interface and used to convert the redox couples in the RFB to fully charge up the battery. When electricity is needed, the charged up redox couples will be discharged on carbon electrodes to generate the electricity as in a RFB. We have demonstrated that such SFB devices can be charged under solar light without external electric bias and deliver a high discharge capacity comparable with state-of-the-art RFBs over many cycles. After developing silicon solar cells and high performance solar cells, carefully matching them with various organic or inorganic redox couples, and optimizing several generations of SFB device designs, we have recently achieved integrated SFB device with an overall direct solar-to-output electricity efficiency (SOEE) of 14%. These high performance SFBs can serve as distributed and standalone solar energy conversion and storage systems in remote locations and enable practical off-gird electrification.
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White, Marvin H., Yu (Richard) Wang, Stephen J. Wrazien, and Yijie (Sandy) Zhao. "ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY." International Journal of High Speed Electronics and Systems 16, no. 02 (June 2006): 479–501. http://dx.doi.org/10.1142/s0129156406003801.
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This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effectiveness of floating gate technology – questions, which have sparked renewed interest in SONOS technology. The latter offers a single polysilicon device structure with reduced lithography steps together with compact cell layouts - compatible with 'standard' CMOS technology for cost effectiveness. In addition, SONOS technology offers performance features, such as reduced erase and write voltage levels to ease the design of peripheral memory circuits with a decrease in electric fields and localized charge storage for improved reliability and multi-bit storage, and ease of memory testing. A special feature of SONOS technology is radiation hardness, which makes this technology ideal for advanced Space and Military systems. SONOS devices use ultra-thin tunnel oxides (2nm) and operate with 'modified' Fowler-Nordheim and 'direct' tunneling in both erase and write (program) modes. A thicker tunnel oxide SONOS device (5nm), called the NROM™ device, uses 'hot electron injection for programming and 'hot hole band-to-band tunneling' for erase. The NROM™ device provides spatially isolated, two-bit storage with the possibility of multi-level charge (MLC) storage at each bit location. This paper describes the physical electronics for these device structures and their erase/write, retention and endurance characteristics. In addition, several novel SONOS device structures are discussed as potential candidates for future NVSM.
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Babu, Bobba Phaneedra, Allem Rama Krishna Reddy, Gujjula Pratap, Murra Harshavardhana Reddy, A. Hussien Abbas, Raj Kumar, and J. Praveen. "Comparison Analysis of Semiconductor Characterisation topologies using Energy Recirculation Concept." E3S Web of Conferences 391 (2023): 01189. http://dx.doi.org/10.1051/e3sconf/202339101189.
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Energy recirculation concept in semiconductor device characterization can increase power handling capacity of the source and it will reduce naturally existing high electrical stresses on device under test. The proposed energy recirculation and storage circuits (ERSC) can be employed as a device in-situ testing unit, by storing and recirculating the energy of the storage elements. ERSC enables devices to be checked at full-power pressures without being attached to a high-power load or requiring high power source. ERSC has four active states of operations achieved by the two active switches of the proposed converter. This converter can function in four different modes of operation, namely - soft start, magnetize, charge, and energy recirculation modes. Another advantage of this converter is that the two circuits can be constructed to work synchronously or asynchronously, allowing for the testing of faster or slower devices depending on the performance of the device being tested. In this paper double pulse test, single ended buck boost and cascaded boost -buck ERSC converters are simulated using MATLAB/SIMULINK and based on the results cascaded boost-buck ERSC having better performance compared to existing testing methods.
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Lypkivskyi, K. O., and A. G. Mozharovskyi. "IMPROVEMENT OF A MULTILEVEL RECTIFIER AS PART OF A BOOSTER CHANNEL OF A DC POWER SUPPLY SYSTEM BY DECOMPOSITION OF ITS ELEMENTS." Tekhnichna Elektrodynamika 2021, no. 2 (February 23, 2021): 35–41. http://dx.doi.org/10.15407/techned2021.02.035.
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In power systems with renewable energy sources, the output voltage level depends on a priori unstable meteorological environmental conditions. This requires the introduction of an energy storage device (storage battery) into such systems and the organization of an appropriate booster channel (BC). In the output stage of the BDK, various types of transformer-and-switches executive structure (TSES) are used, in particular, multilevel rectifiers (MLR), one of the quality indicators of which is the efficiency of using semiconductor devices. In order to increase this indicator, it is proposed to perform the decomposition of the MLU from two series-connected blocks, which made it possible to synthesize new circuitry solutions for the TSES of this type. The possibility of achieving the desired accuracy of maintaining the output voltage with a limited number of semiconductor devices has been confirmed on specific examples. References 14, tables 2, figures 4.
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Salaoru, Iulia, and Shashi Paul. "Memory Effect of a Different Materials as Charge Storage Elements for Memory Applications." Advances in Science and Technology 77 (September 2012): 205–8. http://dx.doi.org/10.4028/www.scientific.net/ast.77.205.
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In recent years, the interest in the application of organic materials in electronic devices (light emitting diodes, field effect transistors, solar cells), has shown a rapid increase. Polymer memory devices (PDMs) is a very recent addition to the organic electronics. The polymer memory devices can be fabricated by depositing a blend (an admixture of organic polymer, small organic molecules and metal or semiconductor nanoparticles) between two metal electrodes. We demonstrate the memory effect in the device with simple structure based on blend of polymer with different materials like ionic compound (NaCl), ferroelectrical nano-particles (BaTiO3) and small organic molecules In 2007 Paul has proposed a model to explain memory effect a switching between two distinctive conductivity states when voltage is applied based on electrical dipole formation in the polymer matrix. Here, we investigate if our memory devices based on different types of materials are fitted with the proposed model.
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Che, Yongli, Yating Zhang, Xiaolong Cao, Xiaoxian Song, Mingxuan Cao, Haitao Dai, Junbo Yang, Guizhong Zhang, and Jianquan Yao. "Low operating voltage ambipolar graphene oxide-floating-gate memory devices based on quantum dots." Journal of Materials Chemistry C 4, no. 7 (2016): 1420–24. http://dx.doi.org/10.1039/c5tc04007h.
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Lingalugari, Murali, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Multi-Bit Quantum Dot Nonvolatile Memory (QDNVM) Using Cladded Germanium and Silicon Quantum Dots." International Journal of High Speed Electronics and Systems 24, no. 03n04 (September 2015): 1550003. http://dx.doi.org/10.1142/s0129156415500032.
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In this paper, we are experimentally demonstrating the multi-bit storage of a nonvolatile memory device with cladded quantum dots as the floating gate. These quantum dot nonvolatile memory (QDNVM) devices were fabricated by using standard complementary metal-oxide-semiconductor (CMOS) process. The quantum dots in the floating gate region assembled using site-specific selfassembly (SSA) technique. Quantum mechanical simulations of this device structure are also presented. The experimental results show that the voltage separation between the bits was 0.15V and the voltage pulses required to write these bits were 11.7V and 30V. These devices demonstrated the larger write voltage separation between the bits.
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Zhou, Shuai, Kaixue Ma, Yugong Wu, Peng Liu, Xianghong Hu, Guojian Nie, Yan Ren, et al. "Survey of Reliability Research on 3D Packaged Memory." Electronics 12, no. 12 (June 17, 2023): 2709. http://dx.doi.org/10.3390/electronics12122709.
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As the core carrier of information storage, a semiconductor memory device is a basic product with a large volume that is widespread in the integrated circuit industry. With the rapid development of semiconductor manufacturing processes and materials, the internal structure of memory has gradually shifted from a 2D planar packaging structure to a 3D packaging structure to meet industry demands for high-frequency, high-speed, and large-capacity devices with low power consumption. However, advanced 3D packaging technology can pose some reliability risks, making devices prone to failure, especially when used in harsh environmental conditions, including temperature changes, high temperature and humidity levels, and mechanical stress. In this paper, the authors introduce the typical structure characteristics of 3D packaged memory; analyze the reasons for device failure caused by stress; summarize current research methods that utilize temperature, mechanical and hygrothermal theories, and failure models; and present future challenges and directions regarding the reliability research of 3D packaged memory.
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Zhou, Bin, Chang Liu, Chenrun Guo, Xianghong Hu, Xiaodong Jian, Hongyue Wang, and Xiaofeng Yang. "Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors." Micromachines 15, no. 5 (April 30, 2024): 611. http://dx.doi.org/10.3390/mi15050611.
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In this paper, high-temperature storage of hydrogen-treated AlGaN/GaN HEMTs is conducted for the first time to study the effect of high temperature on the electrical characteristics of the devices after hydrogen treatment, and it is found that high-temperature storage can effectively reduce the impact of hydrogen on the devices. After hydrogen treatment, the output current and the maximum transconductance of the device increase, and the threshold voltage drifts negatively. However, after high-temperature treatment at 200 °C for 24 h, the output current, threshold voltage, and the maximum transconductance of the device all approach their initial values before hydrogen treatment. By using low-frequency noise analysis technology, the trap density of the hydrogen-treated AlGaN/GaN HEMT is determined to be 8.9 × 1023 cm−3·eV−1, while it changes to 4.46 × 1022 cm−3·eV−1 after high-temperature storage. We believe that the change in the electrical characteristics of the device in hydrogen is due to the passivation of hydrogen on the inherent trap of the device, and the variation in the electrical properties of the device in the process of high-temperature storage involves the influence of two effects, namely the dehydrogenation effect and the improvement of the metal–semiconductor interface caused by high temperatures.
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Suchaneck, G., and G. Gerlach. "Image Capture Devices Based on Charge Storage at Semiconductor-Ferroelectric Interfaces." Integrated Ferroelectrics 54, no. 1 (April 2003): 619–29. http://dx.doi.org/10.1080/10584580390259038.
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Wang, Lulu, Jiameng Sun, Yinxing Zhang, Jiangzhen Niu, Zhen Zhao, Zhenqiang Guo, Zixuan Zhang, et al. "Ferroelectric memristor based on Li-doped BiFeO3 for information processing." Applied Physics Letters 121, no. 24 (December 12, 2022): 241901. http://dx.doi.org/10.1063/5.0131063.
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As a nanoscale semiconductor memory device, a ferroelectric memristor has promising prospects to break through the von Neumann framework in terms of artificial synaptic function, information processing, and integration. This study presents the fabrication of Li0.09Bi0.91FeO3 as the functional layer for a memristor device based on the Si substrate, enabling the integration of silicon complementary metal oxide semiconductor technology. In addition, it exhibits bipolar resistance switching characteristics in a direct current mode and can rapidly achieve stable conductance tunability at higher frequencies through the applied pulse for biosynapse simulation. More importantly, multiple devices are connected into electrical circuits to realize storage functions with information processing and programmable characteristics. This work paves the way for near-future applications of ferroelectric memristors in information processing.
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Syed Ahsan Ali Shah, Ahsanali. "Overview of Power Electronic Devices & its Application Specifically Wide Band Gap and GaN HEMTs." International Journal of Sciences and Emerging Technologies 1, no. 1 (August 5, 2022): 39–49. http://dx.doi.org/10.56536/ijset.v1i1.21.
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The review paper presents a prologue of power electronics devices and its industrial applications including wide band gap semiconductor devices in range of 600V to 1700V and latest evaluation of Gallium Nitride High Electron Mobility Transistor technology (GaN HEMT) in range of 30V to 650V with applications. The study emphasizes advance power electronic applications in renewable energy system, smart grid power system, power saving, electric vehicles and energy storage system. Similarly, comparison of latest WBG semiconductors as SiC, SiC JFETs, SJ MOSFETs and GaN-HEMTs discussed in terms of different parameters e.g static losses, dynamic losses and temperature impact, thus further signify latest GaN technology evolution and its related challenges with detailed static as well as dynamic characterization. This paper demonstrates all types of electronics devices in power sector and its practical usage mentioned in detail, it includes tradeoff between different WBG devices and also explain GaN functions and applications in various circuits of high efficiency and density.
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Манько, Aleksey Manko, Ярыгин, and Anatoliy Yarygin. "Estimates of minimal doses of semiconductor devices in the study of their resistance in the process of monitoring the state of forests." Forestry Engineering Journal 5, no. 1 (May 1, 2015): 65–74. http://dx.doi.org/10.12737/11264.
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The problem of modern ecological and resource-saving technologies in forest harvesting and agriculture is associated with the device for status monitoring of such complex systems as a system of forestry and agriculture. Such monitoring is convenient to carry out with semiconductor sensors, because the information in them is stored in a computer accessible form. However, in vivo sensors are exposed to the environment and therefore it is relevant to define criteria for determining the re-sistance of semiconductor devices, reflecting the quality of the functioning of the last ones. Measure of the resistance of test subjects, such as a semiconductor element base is the quality of functioning: a – normal functioning; in temporary impairment or loss of function or performance with automatic reset; c – temporary impairment or loss of function or performance which requires operator inter-vention or system restart; d – the deterioration or loss of function that can not be repaired because of damage to the equipment (components) or software, or loss of data. Methodology of the most of the published data on the levels of criteria corresponds to substantially inflated levels of exposure to the test object. In addition, based on the statistical processing of the results of experimental studies of the resistance of semiconductor devices to ultrashor pulsed field action the empirical relation is got between the dose of impact energy of pulses with pulse duration, repetition rate and the irradiation time. We justify the need to complement of existing standards for resistance semiconductor element base to nanosecond pulse interferences with wider range of test signals, taking into account dose and effects of energy storage of pulse sequence in semiconductor devices.
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Kuldashov, O. Kh, G. O. Kuldashov, and Z. Yu Mamasodikova. "Optoelectronic Double-Wave Method for Remote Control of Vegetable Fiber Moisture." Herald of the Bauman Moscow State Technical University. Series Instrument Engineering, no. 4 (127) (August 2019): 84–96. http://dx.doi.org/10.18698/0236-3933-2019-4-84-96.
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The paper introduces an optoelectronic two-wave method for remote control of raw cotton moisture. To improve the quality of materials obtained from the fiber, it is necessary to proper organize its storage and comply with the optimal modes of processing technology at all stages of production. Proper storage and selection of technological processing depend on the quality indicators of the fiber, namely its moisture. The study shows that currently used methods and devices for the fiber moisture control do not meet the requirements of rapidity and the required measurement accuracy. We found it relevant to develop highly sensitive, accurate and reliable control devices for raw cotton moisture using new high-performance semiconductor radiation sources in the near infrared region. The paper presents a block diagram of an optoelectronic device for remote control of raw cotton moisture. The device uses LED19-PR with a typical maximum emission wavelength of 1.95 µm as radiation sources. The results of remote control of raw cotton moisture are given.
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Wang, Li-Wen, Chih-Wei Huang, Ke-Jing Lee, Sheng-Yuan Chu, and Yeong-Her Wang. "Multi-Level Resistive Al/Ga2O3/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing." Nanomaterials 13, no. 12 (June 13, 2023): 1851. http://dx.doi.org/10.3390/nano13121851.
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Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high density requirement in the era of big data. Many research groups have demonstrated that RRAM possesses the potential for multi-level cells, which would overcome demands related to mass storage. Among numerous semiconductor materials, gallium oxide (a fourth-generation semiconductor material) is applied in the fields of optoelectronics, high-power resistive switching devices, and so on, due to its excellent transparent material properties and wide bandgap. In this study, we successfully demonstrate that Al/graphene oxide (GO)/Ga2O3/ITO RRAM has the potential to achieve two-bit storage. Compared to its single-layer counterpart, the bilayer structure has excellent electrical properties and stable reliability. The endurance characteristics could be enhanced above 100 switching cycles with an ON/OFF ratio of over 103. Moreover, the filament models are also described in this thesis to clarify the transport mechanisms.
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Yata, Shizukuni, Shiro Mori, Hisashi Satake, and Hajime Kinoshita. "Study on High Power Electric Energy Storage Devices Using Polyacenic Semiconductor Material." Journal of The Electrochemical Society 154, no. 3 (2007): A221. http://dx.doi.org/10.1149/1.2430677.
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Kingon, A. I., S. K. Streiffer, C. Basceri, and S. R. Summerfelt. "High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories." MRS Bulletin 21, no. 7 (July 1996): 46–52. http://dx.doi.org/10.1557/s0883769400035910.
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An important application of ferroelectric films is their incorporation into dynamic random-access memories (DRAMs) as the storage node capacitor dielectric. Dynamic random-access memories represent a large market that is experiencing strong growth, but they are particularly significant as the technology leader for semiconductor devices. As products move to higher and higher integration density, new developments are first introduced in DRAMs. The steady trend toward higher density has placed severe demands on the device designs, particularly with respect to “squeezing” the capacitor into the available space.
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Das, Nipom Sekhar, Koustav Kashyap Gogoi, and Avijit Chowdhury. "Review on graphene oxide-based nanocomposites for resistive switching applications." International Journal of Innovative Research in Physics 2, no. 4 (July 5, 2021): 1–7. http://dx.doi.org/10.15864/ijiip.2401.
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Graphene and graphene oxide (GO) have attracted growing attention in the field of resistive switching memory due to their extraordinary structural, physical and electronic characteristics. Moreover, properties such as excellent charge carrier mobility, high mechanical strength, and outstanding thermal properties make the graphene-based materials suitable for a broad range of other exploitations and many technological applications such as in sensors, energy storage devices, batteries, photocatalysis, electronic devices, supercapacitors etc. The limiting factors such as low storage density and scaling capabilities in silicon-based memories have led the researchers to explore other alternatives for developing the next generation cost effective data storage devices. The article summarises the recent advances in the field of resistive switching memory and tries to focus mainly on the use of graphene-based semiconductor heterostructure devices. The article further includes a brief comparison of the memory performances of graphene/GO nanocomposites with various insulating polymers and semiconducting materials.
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Huang, Y. Q., V. Polojärvi, S. Hiura, P. Höjer, A. Aho, R. Isoaho, T. Hakkarainen, et al. "(Invited) Quest for Fully Spin and Optically Polarized Semiconductor Nanostructures for Room-Temperature Opto-Spintronics." ECS Meeting Abstracts MA2023-02, no. 34 (December 22, 2023): 1666. http://dx.doi.org/10.1149/ma2023-02341666mtgabs.
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Spintronics represents a new paradigm for future electronics, photonics and information technology, which explores the spin degree of freedom of the electron for information storage, processing and transfer. Since 1990s, we have witnessed great success of metal-based spintronics that has revolutionized the mass data storage industry. There has also been an enormous push for semiconductor spintronics during the past three decades, with the aim to capitalize the past and current success of charge-based semiconductor technology and to make its spin counterpart the backbone of future spintronics just like semiconductors have done in today’s electronics/photonics. An exclusive advantage of semiconductor spintronics is its potential for opto-spintronics that will allow integration of spin-based information processing and storage with photon-based information transfer and communications. Unfortunately, progresses of semiconductor spintronics have so far been severely hampered by the failure to generate nearly fully spin-polarized charge carriers in semiconductors at and above room temperature (RT) at which today’s devices operate. In this work, we succeed to achieve conduction electron spin polarization exceeding 90% at RT in a semiconductor nanostructure, which remains steadily high even up to 110°C [1]. This represents the highest RT electron spin polarization ever reported in any semiconductor by any approach! This breakthrough is accomplished by a conceptually new approach of defect-engineered remote spin filtering and amplification of InAs quantum-dot (QD) electrons via an adjacent tunneling-coupled GaNAs quantum well acting as a spin filter. The extraordinary spin filtering effect in GaNAs is enabled by spin-dependent recombination via spin-polarized defects, i.e. grown-in Ga self-interstitials, which selectively deplete conduction electrons with an opposite spin orientation to that of the defect electron. In sharp contrast to the general trend of deteriorating spin polarization with increasing temperature seen in all other approaches of spin generation, our approach is gifted with an opposite temperature dependence up to RT thanks to a thermally accelerated remote spin-filtering effect as a result of thermally activated recombination via the defects [2]. We further show that the QD electron spin can be remotely manipulated by spin control in the adjacent spin filter, paving the way for remote spin encoding and writing of quantum memory as well as for remote spin control of spin-photon interfaces. This work demonstrates the feasibility to implement opto-spintronic functionality under practical device operation conditions in a semiconductor nanostructure system based on the mature III-V semiconductor technology commonly used for today’s optoelectronics and photonics. It could also pave the way for a range of potential spintronic and opto-spintronic applications exploiting the state-of-the-art GaAs technology platform, such as spin-LEDs, spin lasers, spin-polarized single-photon sources, quantum spin-photon interfaces, spin qubits, etc. References [1] Y.Q. Huang, V. Polojärvi, S. Hiura, P. Höjer, A. Aho, R. Isoaho, T. Hakkarainen, M. Guina, S. Sato, J. Takayama, A. Murayama, I.A. Buyanova and W.M. Chen, Nature Photonics 15, 475 (2021). [2] Y.Q. Huang, Y. Puttisong, P. Höjer, A. Aho, R. Isoaho, T. Hakkarainen, M. Guina, I.A. Buyanova and W.M. Chen, unpublished
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Moatlhodi, Ogomoditse O., Nonofo M. J. Ditshego, and Ravi Samikannu. "Vertical Cavity Surface Emitting Lasers as Sources for Optical Communication Systems: A Review." Journal of Nano Research 65 (December 2020): 51–96. http://dx.doi.org/10.4028/www.scientific.net/jnanor.65.51.
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Next generation integrated photonic circuits will be dominated by small footprint devices with lower power consumption, low threshold currentsand high efficiencies. Vertical Cavity Surface Emitting Lasers (VCSELs) having those attractive qualities has shown results to meet the next generation demands for optical communication sources. VCSELs applications are sensors, data com, optical communication, spectroscopy, printers, optical storage, laser displays, atomic optical clocks, laser radar, optical signal processing to name a few. This review centres around on the basic operation of semiconductor lasers, structure analysis of the devices and parameter optimisation for optical communication systems. This paper will provide comparisons on growth techniques and material selection and intends to give the best material realisation for nano optical sources that are up to date as used in optical communication systems. It also provides summarised improvements by other research groups in realisation of VCSELs looking at speeds, efficiency, temperature dependence and the device physical dimensions. Different semiconductor device growth methods, light emitting materials and VCSELs state of art are reviewed. Discussions and a comparisons on different methods used for realising VCSELs are also looked into in this paper.
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Dong, Yiwang, Muhammad Yousaf, Muhammad Ali Kamran Yousaf Shah, Muhammad Akbar, Yuzheng Lu, Lei Zhang, Qadeer Akbar Sial, Peng Cao, and Changhong Deng. "Developing CeO2-CoAl2O4 Semiconductor Ionic Based Heterostructure Composite Electrolyte for Low-Temperature Solid Oxide Fuel Cells (SOFCs)." Crystals 13, no. 6 (June 19, 2023): 975. http://dx.doi.org/10.3390/cryst13060975.
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Semiconductor ionic electrolytes, especially heterostructure composites, have a significant role in enhancing oxide ion conductivity and peak power density (PPD) because of their interfacial contact. In this work, the fluorite structure CeO2 and spinel-based CoAl2O4 samples, as a heterostructure composite electrolyte, are successfully fabricated. The p-type CoAl2O4 and n-type CeO2 heterostructure (CeO2-CoAl2O4) used as an electrolyte exhibits a cell performance of 840 mW/cm2 under fuel cell H2/air conditions at 550 °C, which is quite higher than the pure CoAl2O4 and CeO2 fuel cell devices. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HR-TEM) verified the heterostructure formation including the morphological analysis of the prepared heterostructure composite. The heterostructure-based CeO2-CoAl2O4 composite achieved a higher ionic conductivity of 0.13 S/cm at 550 °C temperature, which means that the constructed device successfully works as an electrolyte by suppressing electronic conductivity. Meanwhile, the obtained results demonstrate the semiconductor ionic heterostructure effect by adjusting the appropriate composition to build heterostructure of the n-type (CeO2) and p-type (CoAl2O4) components and built-in electric field. So, this work exhibits that the constructed device can be effective for energy conversion and storage devices.
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Prokes, S. M., and Kang L. Wang. "Novel Methods of Nanoscale Wire Formation." MRS Bulletin 24, no. 8 (August 1999): 13–19. http://dx.doi.org/10.1557/s0883769400052842.
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In recent years, tremendous interest has been generated in the fabrication and characterization of nanoscale structures such as quantum dots and wires. For example, there is interest in the electronic, magnetic, mechanical, and chemical properties of materials with reduced dimensions. In the case of nanoscale semiconductors, quantum effects are expected to play an increasingly prominent role in the physics of nanostructures, and a new class of electronic and optoelectronic devices may be possible. In addition to new and interesting physics, the formation and characterization of nanoscale magnetic structures could result in higher-density storage capacity in hard disks and optical-recording media. Likewise, phonon confinement leads to a drastic reduction of thermal conductivity and can be used to improve the performance of thermoelectric devices.In 1980, H. Sakaki predicted theoretically that quantum wires may have applications in high-performance transport devices, due to their sawtoothlike density of states (E1/2), where E is the electron energy. Since then, most quantum wires have been made by fabricating a gratinglike gate on top of a two-dimensional (2D) electron gas contained in a semiconductor heterojunction or in metal-oxide-semiconductor structures. By applying a negative gate voltage to the system, its structure can be changed from a 2D to a one-dimensional (1D) regime, where electron confinement is achieved by an electrostatic confining potential. It was not until recently that “physical” semiconductor quantum wires with the demonstrated 1D confinement by physical boundaries began to be fabricated.
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Kychak, Vasyl, Ivan Slobodian, and Victor Vovk. "INCREASING RADIATION RESISTANCE OF MEMORY DEVICES BASED ON AMORPHOUS SEMICONDUCTORS." Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska 10, no. 3 (September 30, 2020): 78–81. http://dx.doi.org/10.35784/iapgos.2081.
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A memory cell structure is proposed that uses a Schottky barrier thin film transistor based on an amorphous semiconductor as a junction element, and a chalcogenide glassy semiconductor film as a switching element. A physical storage cell model has been developed. The dependence of the transistor and memory cell parameters on the dose of neutron flux and γ - quanta was investigated. It is shown that when the dose of neutron irradiation is changed, the steepness of the drain-gate characteristic (DGC) decreases by 10% at a dose of the order of 1015 n/s, at the same time, the transfer coefficient of the bipolar n-p-n transistor decreases by 20% already at doses of 1013 n/s, indicating a significant increase in the radiation resistance of the proposed memory cell. In the case of irradiation with γ - quanta in the range up to 2.6 MRad, the steepness of the DGC of the proposed structure changes by only 10%. When used as an isolation element, a field-effect transistor with an insulated gate, the slope of the DGC is reduced by 50%. It is shown that the current of recording information of the proposed structure when changing the dose of γ - quantum flux to 2.6 MRad changes by about 10%, at the same time, in the case of using a field-effect transistor with an isolated cover, the information recording current changes by 50%. The study of the dependence of the gate current on the dose of γ – quanta is showed. When the radiation dose changes from 0 to 2.6 MRad, the gate current changes only by 10%, which indicates the high resistance of the proposed structure to the action of permeable radiation. Also, studies of the dependence of the conductivity of single-crystal semiconductors on the radiation dose ɣ by quanta and neutron flux show that a significant increase in the specific resistivity of AS occurs at doses 2-3 orders of magnitude larger than in the case of single-crystal n-type conductivity semiconductors.
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Alahmadi, Abdulhadi, and Tae Sun Chung. "RSLSP: An Effective Recovery Scheme for Flash Memory Leveraging Shadow Paging." Electronics 11, no. 24 (December 10, 2022): 4126. http://dx.doi.org/10.3390/electronics11244126.
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The flash storage is a non-volatile semiconductor device that is constantly powered and has several advantages such as small size, lower power consumption, fast access, convenient portability, heat dissipation, shock resistance, data retention next to a power off, and random access. Flash memory is presently being incorporated with distinct embedded system devices such as with digital cameras, smart phones, personal digital assistants (PDA), and sensor devices. Nevertheless, a flash memory entails special features such as “erase-before-write” and “wear-leveling”, an FTL (flash translation layer) upon the software layer should be included. Although, the power off recovery plays a significant role in portable devices, most FTL algorithms did not consider the power off recovery scheme. In this paper, we proposed an effective scheme for the recovery of flash memory leveraging the shadow paging concept for storage devices using flash memory. To combat the sudden power off problem, the suggested RSLSP approach saves and keeps the map block data as a combination of two tables, i.e., first is the original block and the second block is a replica for the original one. Our proposed strategy not only improves the capacity of a flash memory device as compared to the state-of-the-art schemes suggested in the literature, but is also compatible with the existing FTL-based schemes.
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Saranti, Konstantina, and Shashi Paul. "Two-Terminal Non-Volatile Memory Devices Using Silicon Nanowires as the Storage Medium." Advances in Science and Technology 95 (October 2014): 78–83. http://dx.doi.org/10.4028/www.scientific.net/ast.95.78.
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In the recent years a notable progress in the miniaturisation of electronic devices has been achieved in which the main component that has shown great interest is electronic memory. However, miniaturisation is reaching its limit. Alternative materials, manufacturing equipment and architectures for the storage devices are considered. In this work, an investigation on the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices is presented. Silicon nanostructures have attracted attention due to their small size, interesting properties and their potential integration into electronic devices. The two-terminal memory devices presented in this work, have a simple structure of silicon nanowires sandwiched between dielectric layers (silicon nitride) on glass substrate with thermally evaporated aluminium bottom and top contacts. The silicon nanostructures and the dielectric layer were deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique. The electrical behaviour of the memory cell was examined by Current-Voltage (I-V), data retention time (Current-time) and write-read-erase-read measurements. Metal-Insulator-Semiconductor (MIS) structures were also prepared for further analysis. The same silicon nanowires were embedded into the MIS capacitors and Capacitance-Voltage (C-V) analysis was conducted. Strong I-V and C-V hysteresis as well as an electrical bistability were detected. The memory effect is observed by this electrical bistability of the device that was able to switch between high and low conductivity states.
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Zhuravleva, I., and Elena Popova. "Semiconductor technologies for the implementation of radiation-resistant VLSI." Modeling of systems and processes 15, no. 1 (April 8, 2022): 44–52. http://dx.doi.org/10.12737/2219-0767-2022-15-1-44-52.
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High values of photocurrents associated with instantaneous radiation can cause a transient voltage drop on the power buses, and some circuits are sensitive to currents generated in the element. This can lead to malfunctions ranging from temporary loss of functioning to data loss by memory and even to final damage to the product. The library elements are accessed at several levels of radiation, as for the design of elements, options for special simulation modeling and methods for creating topology. The article discusses the technologies of radiation-resistant ICS, their effectiveness on silicon-on-insulator structures, compared with a similar scheme on bulk silicon with the same design standards. Radiation-resistant semiconductor specialized devices with increased radiation resistance are also considered. Special attention is paid to the technology of implementation of radiation-resistant semiconductor storage devices. In relation to radiation-resistant logic devices, two directions are considered: the use of specialized logic circuits and user-programmable gate arrays.
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Zhuiykov, Serge, and Zhen Yin Hai. "Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions." Key Engineering Materials 765 (March 2018): 8–11. http://dx.doi.org/10.4028/www.scientific.net/kem.765.8.
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Large-scale fabrication of two-dimensional (2D) nanomaterials by vapor phase depostion enabled the establishment of vertically aligned semiconductor herterojunctions. However, the property modulation of 2D semiconductor heterojunctions remains chanlleging within such thin layers. Herein, we proposed a general strategy towards the surface functionlization of 2D semiconductor heterojunctions simply by two-step atomic layer deposition (ALD) process with following post-annealing. TiO2-WO3 heterojunction was taken as a typical case in this work and its electrochemical properties were significantly improved via the proposed strategy. This strategy may open a new pathway for facile functionalization of 2D nanomaterials for the energy conversion and storage devices.
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Li, Yilong. "Application of Two-Dimensional Semiconductor In Transistor." Highlights in Science, Engineering and Technology 87 (March 26, 2024): 219–25. http://dx.doi.org/10.54097/6z2fst14.
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Two-dimensional semiconductor materials are a class of thin film materials with atomic thickness and unique electronic structure. They have important application prospects in semiconductor technology, especially in field effect transistors (FETs). This paper reviews the properties, applications, and challenges of two-dimensional semiconductor materials and their potential in different types of FETs. This paper introduces the representative members of two-dimensional semiconductor materials, including graphene, transition metal chalcogenides (TMDs) and black phosphorus, as well as their synthesis methods and bandgap regulation strategies. The paper then analyzes the applications and advantages of 2D semiconductor materials in digital, optoelectronic, pressure-sensitive, and brain-like FETs and their broad uses in electronic, optoelectronic, sensing, and energy storage devices. Finally, the main challenges facing 2D semiconductor materials in FETs are discussed, including material quality, contact resistance, process compatibility and environmental stability, and future research directions and prospects.
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HUANG HE, TANG DING-YUAN, TONG FEI-MING, and ZHENG GUO-ZHEN. "DYNAMIC STORAGE TIME MEASUREMENTS OF N-TYPE Hg1-xCdxTe METAL-INSULATOR-SEMICONDUCTOR DEVICES." Acta Physica Sinica 43, no. 11 (1994): 1883. http://dx.doi.org/10.7498/aps.43.1883.
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Kim, Cheolho, Jiwon Sul, and Jun Hyuk Moon. "Semiconductor process fabrication of multiscale porous carbon thin films for energy storage devices." Energy Storage Materials 57 (March 2023): 308–15. http://dx.doi.org/10.1016/j.ensm.2023.02.026.
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Kübel, Christian, Andreas Voigt, Remco Schoenmakers, Max Otten, David Su, Tan-Chen Lee, Anna Carlsson, and John Bradley. "Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and Semiconductor Applications." Microscopy and Microanalysis 11, no. 5 (September 26, 2005): 378–400. http://dx.doi.org/10.1017/s1431927605050361.
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Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimensional (3D) structural information in physical sciences. In this article, we evaluate the capabilities and limitations of transmission electron microscopy (TEM) and high-angle-annular-dark-field scanning transmission electron microscopy (HAADF-STEM) tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1–2 nm can be resolved in three dimensions by electron tomography. For partially crystalline materials with small single crystalline domains, bright-field TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.
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Dobson, David A. B., and Savvas G. Chamberlain. "Transient analysis of signal charge transfer in long diffused regions of spectroscopic image sensors." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1086–91. http://dx.doi.org/10.1139/p92-175.
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This paper presents the results of a study of charge transfer time in long doped semiconductor regions. These regions are used to collect and store charge in high performance image sensors. The effect of dopant concentration on charge transfer time was studied using a novel two-dimensional device simulation tool. It was found that the delay associated with the long storage region only becomes significant for doping concentrations that are not degenerate. The effect of storage diffusion length on charge transfer time was also studied for degenerately doped structures. For these structures, it was found that the delay is much less than the conventional belief that the delay is proportional to the square of the diffusion dimension the electrons traverse. It was also found that the diffusion dimension affects the charge transfer time indirectly through the back biasing of the transfer metal oxide semiconductor field effect transistor (MOSFET). Shorter diffusions initially cause a larger back biasing of the transfer MOSFET, decreasing the maximum current flow through the device. On the experimental side, novel image sensor devices were designed that incorporate some of the results discussed above. Experimental image sensor structures were analyzed to study charge transfer time and relate the results to the computer simulations.
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Kim, Kyung Hoon, Min Jung Lee, Chul Kyu Kim, Eun Taek Woo, Mi Hee Kim, Youn Sang Kim, and Kyu Soon Shin. "Nano-Imprinted Ultrahigh-Density Nanopore Arrays." Solid State Phenomena 124-126 (June 2007): 1269–72. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1269.
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Nano-structured polymer stamps were prepared from porous anodic alumina templates. Prepolymers were poured onto the highly ordered porous anodic alumina templates, and they were cured by UV-irradiation. Simple separation of the elastic stamp from the nanoporous aluminum oxide leads to well replicated nano-stamps. The nanopatterns on the stamp were transferred as ultrahigh-density nanopore arrays on various substrates which are potentially applicable to the fabrication of ultrahigh-density metallic or semiconductor nanodot arrays for magnetic storage devices or display devices.
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Gale, Glenn W. "Industry Context for Semiconductor Wet Etch and Surface Preparation." Solid State Phenomena 282 (August 2018): 3–9. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.3.
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The semiconductor industry is undergoing a transition driven by end use markets. In recent years, mobile devices have been the leading generator of growth. Now the connection of various products and machines to the internet is generating new and extensive demands for memory (storage of the data), logic (intelligent processing of the data including machine learning), and sensing (e.g., image sensors generating visual data). Thus the versatile planar MOS transistor based semiconductor technology has diverged into various specialized and complex branches, with each technology type using unique approaches to address scaling challenges. These lead to specific requirements for semiconductor wafer surface preparation. This paper will review the high level industry trends and how they affect surface preparation specifically.
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Alahmadi, Abdulhadi, and Tae Sun Chung. "Crash Recovery Techniques for Flash Storage Devices Leveraging Flash Translation Layer: A Review." Electronics 12, no. 6 (March 16, 2023): 1422. http://dx.doi.org/10.3390/electronics12061422.
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The flash storage is a type of nonvolatile semiconductor device that is operated continuously and has been substituting the hard disk or secondary memory in several storage markets, such as PC/laptop computers, mobile devices, and is also used as an enterprise server. Moreover, it offers a number of benefits, including compact size, low power consumption, quick access, easy mobility, heat dissipation, shock tolerance, data preservation during a power outage, and random access. Different embedded system products, including digital cameras, smartphones, personal digital assistants (PDA), along with sensor devices, are currently integrating flash memory. However, as flash memory requires unique capabilities such as “erase before write” as well as “wear-leveling”, a FTL (flash translation layer) is added to the software layer. The FTL software module overcomes the problem of performance that arises from the erase before write operation and wear-leveling, i.e., flash memory does not allow for an in-place update, and therefore a block must be erased prior to overwriting upon the present data. In the meantime, flash storage devices face challenges of failure and thus they must be able to recover metadata (as well as address mapping information), including data after a crash. The FTL layer is responsible for and intended for use in crash recovery. Although the power-off recovery technique is essential for portable devices, most FTL algorithms do not take this into account. In this paper, we review various schemes of crash recovery leveraging FTL for flash storage devices. We illustrate the classification of the FTL algorithms. Moreover, we also discuss the various metrics and parameters evaluated for comparison with other approaches by each scheme, along with the flash type. In addition, we made an analysis of the FTL schemes. We also describe meaningful considerations which play a critical role in the design development for power-off recovery employing FTL.
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Kuhr, Werner G., Antonio R. Gallo, Robert W. Manning, and Craig W. Rhodine. "Molecular Memories Based on a CMOS Platform." MRS Bulletin 29, no. 11 (November 2004): 838–42. http://dx.doi.org/10.1557/mrs2004.238.
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AbstractHybrid complementary metal oxide semiconductor (CMOS)/molecular memory devices are based on a dynamic random-access memory (DRAM) architecture, are fast, have high density, and exhibit low power consumption. These devices use a well-characterized charge storage mechanism to store information based on the intrinsic properties of molecules attached to a CMOS platform. The molecules are designed in a rational way to have known electrical properties and can be incorporated into CMOS devices with only minor modification of existing fabrication methods. Each memory element contains a monolayer of molecules (typically 100,000–1,000,000) to store charge; this process yields a structure that has many times the charge density of a typical DRAM capacitor, obviating the necessity for a trench or stacked capacitor geometry. The magnitude of voltage required to remove each electron is quantized (typically a few hundred millivolts per state), making it much easier to put molecules in a known state and to detect that state with low-power operation. Existing devices have charge retention times that are >1000 times that of semiconductors, and nonvolatile strategies based on simple modifications of existing systems are possible. All of these devices are ultimately scalable to molecular dimensions and will enable the production of memory products as small as state-of-the-art lithography will allow.
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Karbalaei Akbari, Mohammad, Nasrin Siraj Lopa, and Serge Zhuiykov. "Exploring Heterointerface Characteristics and Charge-Storage Dynamics in ALD-Developed Ultra-Thin TiO2-In2O3/Au Heterojunctions." Coatings 14, no. 7 (July 14, 2024): 880. http://dx.doi.org/10.3390/coatings14070880.
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Directional ionic migration in ultra-thin metal-oxide semiconductors under applied electric fields is a key mechanism for developing various electronic nanodevices. However, understanding charge transfer dynamics is challenging due to rapid ionic migration and uncontrolled charge transfer, which can reduce the functionality of microelectronic devices. This research investigates the supercapacitive-coupled memristive characteristics of ultra-thin heterostructured metal-oxide semiconductor films at TiO2-In2O3/Au Schottky junctions. Using atomic layer deposition (ALD), we nano-engineered In2O3/Au-based metal/semiconductor heterointerfaces. TEM studies followed by XPS elemental analysis revealed the chemical and structural characteristics of the heterointerfaces. Subsequent AFM studies of the hybrid heterointerfaces demonstrated supercapacitor-like behavior in nanometer-thick TiO2-In2O3/Au junctions, resembling ultra-thin supercapacitors, pseudocapacitors, and nanobatteries. The highest specific capacitance of 2.6 × 104 F.g−1 was measured in the TiO2-In2O3/Au junctions with an amorphous In2O3 electron gate. Additionally, we examined the impact of crystallization, finding that thermal annealing led to the formation of crystalline In2O3 films with higher oxygen vacancy content at TiO2-In2O3 heterointerfaces. This crystallization process resulted in the evolution of non-zero I-V hysteresis loops into zero I-V hysteresis loops with supercapacitive-coupled memristive characteristics. This research provides a platform for understanding and designing adjustable ultra-thin Schottky junctions with versatile electronic properties.
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Steckl, A. J., and J. M. Zavada. "Optoelectronic Properties and Applications of Rare-Earth-Doped GaN." MRS Bulletin 24, no. 9 (September 1999): 33–38. http://dx.doi.org/10.1557/s0883769400053045.
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As discussed in the accompanying articles in this issue of MRS Bulletin, the optical properties of rare-earth (RE) elements have led to many important photonic applications, including solid-state lasers, components for telecommunications (optical-fiber amplifiers, fiber lasers), optical storage devices, and displays. In most of these applications, the host materials for the RE elements are various forms of oxide and nonoxide glasses. The emission can occur at visible or infrared (IR) wavelengths, depending on the electronic transitions of the selected RE element and the excitation mechanism. Until recently, the study of semiconductors doped with RE elements such as Pr and Er has concentrated primarily on the lowest excited state as an optically active transition. The presence of transitions at IR wavelengths (1.3 and 1.54 μm) that are coincident with minima in the optical dispersion and the loss of silica-based glass fibers utilized in telecommunications, combined with the prospect of integration with semiconductor device technology, has sparked considerable interest.The status and prospects of obtaining stimulated emission in Si:Er are reviewed by Gregorkiewicz and Langer in this issue and by Coffa et al. in a previous MRS Bulletin issue. While great progress is being made in enhancing the emission intensity of Er-doped Si, it still experiences significant loss in luminescence efficiency at room temperature, as compared with low temperatures. This thermal quenching was shown by Favennec et al. to de crease with the bandgap energy of the semiconductor. Hence wide-bandgap semiconductors (WBGSs) are attractive candidates for investigation as hosts for RE doping.
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Shkoda, Dmytro, Mykhailo Kirichenko, Roman Zaitsev, Kseniia Minakova, and Serhii Bilyk. "Development of energy storage for high voltage electromagnetic pulse generator." Bulletin of the National Technical University "KhPI". Series: Energy: Reliability and Energy Efficiency, no. 2 (3) (December 30, 2021): 144–51. http://dx.doi.org/10.20998/2224-0349.2021.02.02.
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Recently, much attention has been paid to electromagnetic stability in the development of energy storage devices, which makes it possible to maintain operating parameters during exposure to electromagnetic pulses and the consequences of their interaction. The issue of ensuring the electromagnetic stability of electronic equipment, due to the fact that under the influence of electromagnetic pulses in electronic and electrical circuits are overvoltage pulses, depending on the origin of electromagnetic pulses, distance from electromagnetic pulses source to hardware components amplitude, rise time and pulse duration can change. That is why the task of creating high-energy electromagnetic pulse generators remains extremely important for modern research. The main use of such generators is to study the interaction of thin-film layers of semiconductor materials with high-energy electromagnetic pulses and the development of elements to protect electronic equipment from the effects of electromagnetic pulses. A set of electromagnetic pulses generators has been created, the use of which will allow studying the properties of the protection elements of electronic equipment in a wide range of electromagnetic pulses capacities. In combination with the previously developed design of the electromagnetic pulses generator, this will affect the studied samples of electronic equipment and protection elements through the integrated operation of the electromagnetic pulses, which will have both high time and high energy. To ensure comfortable and safe research work, the device has a visual indication of operating modes, including modes of high DC voltage generation. The developed control device and power supply for the high-energy electromagnetic pulse generator meets the requirements established during its development and can be used to study the interaction of semiconductor thin-film layers with high-energy electromagnetic pulses.
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Gong, Xiao. "(Invited) BEOL-Compatible Oxide Semiconductor Logic and Memory Devices." ECS Meeting Abstracts MA2023-02, no. 30 (December 22, 2023): 1524. http://dx.doi.org/10.1149/ma2023-02301524mtgabs.
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3D monolithic integration of logic and memory devices has emerged as one of the key enablers for next-generation electronic devices to address the ever-increasing demand for higher integration density, better performance and energy efficiency. BEOL-compatible oxide semiconductors show great potential to revolutionize the field thanks to their unique properties [1]. We present our recent advancement related to BEOL-compatible oxide semiconductors for logic and memory applications. The digital-etch-enabled nanowire transistors and α-IGZO-based eDRAM will first be discussed, followed by the ferroelectric (FE) memories with high performance and novel structures utilizing α-IGZO or ALD-deposited ZnO as the channel. Ultra-scaled amorphous IGZO (α-IGZO) nanowire field-effect transistors (NW-FETs) hold great potential for applications demanding high performance and integration density. To realize the fabrication of high-quality and aggressively-scaled nanowire structures, a novel digital etching method for amorphous α-IGZO materials has been proposed and demonstrated [2]. Confirmed by the SEM images of an α-IGZO nanowire before and after digital etching, a notable nanowire width W NW reduction can be observed. We have the thinnest α-IGZO nanowire achieved by the digital etching with a W NW of approximately 20 nm. By further developing the transistor upon the nanowire, the α-IGZO NW-FET attains a good subthreshold swing (SS) of 80 mV/decade and a high peak extrinsic transconductance (G m, ext) of 612 μS/μm at V DS of 2 V (456 μS/μm at V DS = 1 V). Compared to the previous studies, our IGZO NW-FET achieves one of the highest peak G m values among all IGZO-based FETs. Besides the BEOL compatibility and high on-current, ultra-low subthreshold leakage makes α-IGZO FETs extremely promising for eDRAM. We further investigated the potential of α-IGZO eDRAM by developing the charge-domain compute-in-memory (CiM) [3]. Experiments have demonstrated small SS, large on-state current, and long-time charge retention with our dedicated 4T1C memory cell. With differential cell structure, an even higher tolerance for charge loss can be attained. With experiment-calibrated benchmarking in the VGG-8 network for CIFAR-10 image classification tasks, 2092 TOPS/W power efficiency for the CiM core can be expected, outperforming the prior TFT and CMOS-based CiM approaches, exhibiting significant advantages for ultra-low-power applications. The integration of doped-HfO2 FE material and oxide semiconductor, both BEOL-compatible with large-scale and cost-effective deposition, presents a promising avenue for advancing data storage in the future. We have developed the high-performance α-IGZO Fe-FET with a metal-ferroelectric-metal-oxide-semiconductor (MFMIS) structure as well as the Fe TCAM [4]. The α-IGZO Fe-FET achieves a large memory window of ~3 V with high reliability, while the Fe TCAM reduces the transistor number from 16 to 2 compared to the traditional SRAM-based one. Besides α-IGZO, we believe that ALD-based oxide semiconductors featuring high controllability of film thickness and conformal coverage of the 3D structures can create new opportunities for novel device structure and integration. The fin-gate ZnO Fe-FET stands for a great example while not only outstanding device performance but also suppressed device-to-device variation due to the unique structure have been demonstrated, holding tremendous promise for high-density 3D integration [5]. Acknowledgments: This work is supported by Singapore Ministry of Education (Tier 2: MOE2018-T2-2-154, Tier 1: R-263-000-D65-114). References: [1] S. Dutta et al., IEDM, p. 36.4., 2020. [2] K. Han et al., VLSI, 2021, p. T10-1. [3] J. Liu et al., IEDM, 2021, p. 46.2. [4] C. Sun et al., VLSI, 2021, p. T7-4. [5] Q. Kong et al., IEDM, 2022, p. 12.3.
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Polozhentseva J.A., Alekseeva E.V., and Karushev M.P. "Semiconductor Properties of Polymer Films Based on Nickel Complexwith Salen-type Ligand." Physics of the Solid State 64, no. 1 (2022): 62. http://dx.doi.org/10.21883/pss.2022.01.52489.166.
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Metal complexes of Schiff bases are considered as promising materialsfor energy storage and photovoltaic devices. In this work, thesemiconducting properties of a polymer film of a nickel salen-type complex(poly-Ni(CH3O-Salen)) were studied by spectrophotometric and electrochemicalimpedance spectroscopy methods. The Mott-Schottky analysis showed that the polymerfilm is a semiconducting material with a fairly narrow band gap, high chargecarrier density and p-type conductivity. Using the method of electrochemicalimpedance spectroscopy, the limiting stage of the oxygenphotoelectroreduction reaction, the process of charge transfer from the filmto molecular oxygen, has been established. Keywords: Schiff bases, Mott-Schottky analysis, photovoltaic devices, semiconductor properties.\
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Jin, Song. "(Invited) Solar Flow Batteries: Integrated Photoelectrochemical Solar Energy Conversion and Redox Flow Battery Systems." ECS Meeting Abstracts MA2023-01, no. 37 (August 28, 2023): 2143. http://dx.doi.org/10.1149/ma2023-01372143mtgabs.
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Due to the intermittent nature of sunlight, practical solar energy utilization systems demand both efficient solar energy conversion and inexpensive large scale energy storage. We have developed hybrid solar-charged storage devices called solar flow batteries (SFBs) that integrate photoelectrochemical solar cells with redox flow batteries (RFBs). In these devices, photoexcited carriers collected at the semiconductor-liquid electrolyte interface convert the redox couples to charge up the RFB without external electric bias; which can be discharged to generate the electricity when needed. By matching various silicon solar cells and tandem III-V solar cells (Chem 2018, 4, 2644) with various organic redox couples and optimizing the SFB device design, we improved their round trip solar-to-output electricity efficiency (SOEE) and eventually achieved a record SOEE of 20% with a 500-hour lifetime using high performance tandem perovskite/silicon solar cells (Nature Mater. 2020, 19, 1326). The design principles and the quantitative analysis model for voltage matching solar cells with RFBs (Acc. Chem. Res. 2020, 53, 2611) light up the pathways for achieving even better performance and stability yet maintaining a low cost, which would make these SFBs practical for standalone solar energy conversion and storage systems in remote off-grid locations.
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Chiu, C. J., S. P. Chang, W. Y. Weng, and S. J. Chang. "Amorphous IGZO Nonvolatile Memory Thin Film Transistors Using Ta2O5 Gate Dielectric." Advanced Materials Research 486 (March 2012): 233–38. http://dx.doi.org/10.4028/www.scientific.net/amr.486.233.
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A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta2O5 gate insulator is proposed. The high-dielectric-constant material Ta2O5 was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (ΔVth = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta2O5 can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.
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Sim, Kyoseung, Zhoulyu Rao, Zhanan Zou, Faheem Ershad, Jianming Lei, Anish Thukral, Jie Chen, Qing-An Huang, Jianliang Xiao, and Cunjiang Yu. "Metal oxide semiconductor nanomembrane–based soft unnoticeable multifunctional electronics for wearable human-machine interfaces." Science Advances 5, no. 8 (August 2019): eaav9653. http://dx.doi.org/10.1126/sciadv.aav9653.
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Wearable human-machine interfaces (HMIs) are an important class of devices that enable human and machine interaction and teaming. Recent advances in electronics, materials, and mechanical designs have offered avenues toward wearable HMI devices. However, existing wearable HMI devices are uncomfortable to use and restrict the human body’s motion, show slow response times, or are challenging to realize with multiple functions. Here, we report sol-gel-on-polymer–processed indium zinc oxide semiconductor nanomembrane–based ultrathin stretchable electronics with advantages of multifunctionality, simple manufacturing, imperceptible wearing, and robust interfacing. Multifunctional wearable HMI devices range from resistive random-access memory for data storage to field-effect transistors for interfacing and switching circuits, to various sensors for health and body motion sensing, and to microheaters for temperature delivery. The HMI devices can be not only seamlessly worn by humans but also implemented as prosthetic skin for robotics, which offer intelligent feedback, resulting in a closed-loop HMI system.
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Du, Xiaoshan, Shu Wang, Qiaoxuan Zhang, Shengyao Chen, Fengyou Yang, Zhenzhou Liu, Zhengwei Fan, et al. "Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials." Journal of Semiconductors 45, no. 7 (July 1, 2024): 072701. http://dx.doi.org/10.1088/1674-4926/24010036.
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Abstract Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage, in-memory computing, synaptic applications, etc. In recent years, two-dimensional (2D) materials with moderate defects have been discovered to exist memristive feature. However, it is very difficult to obtain moderate defect degree in 2D materials, and studied on modulation means and mechanism becomes urgent and essential. In this work, we realized memristive feature with a bipolar switching and a configurable on/off ratio in a two-terminal MoS2 device (on/off ratio ~100), for the first time, from absent to present using laser-modulation to few-layer defect-free MoS2 (about 10 layers), and its retention time in both high resistance state and low resistance state can reach 2 × 104 s. The mechanism of the laser-induced memristive feature has been cleared by dynamic Monte Carlo simulations and first-principles calculations. Furthermore, we verified the universality of the laser-modulation by investigating other 2D materials of TMDs. Our work will open a route to modulate and optimize the performance of 2D semiconductor memristive devices.
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Yamada, Hidenori, and Toshishige Yamada. "A semiconductor physics based model for thermal characteristics in electronic electrolytic energy storage devices." Journal of Applied Physics 129, no. 17 (May 7, 2021): 174501. http://dx.doi.org/10.1063/5.0036639.
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Rai, Nitin, and Shailesh R. Chansarkar. "Cyberspace Security : An Overview for Beginners." Defence Science Journal 67, no. 4 (July 3, 2017): 483. http://dx.doi.org/10.14429/dsj.67.11542.
Full textAbstract:
Internet is perhaps the only technology invented by mankind which has singly led to what is appearing to be the third revolution after the renaissance and the industrial revolution. The Internet, as of today, proposes to connect everything driven by the semiconductor, naming it off late, as the Internet-of-Things (IoT). It has over the years, connected the semiconductor driven systems and their human users, evolving the connected whole including the human user represented in that common whole, being called the cyberspace. This cyberspace consists of all the computing, processing, storage, printing, communicating, networking, etc. devices together with the large mass of human population using it.