Relevant bibliographies by topics / Semiconductor to metal transition

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Semiconductor to metal transition'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Semiconductor to metal transition"

1

Peter, A. John, and K. Navaneethakrishnan. "Semiconductor-Metal Transition in Many-Valley Semiconductors." physica status solidi (b) 220, no. 2 (August 2000): 897–907. http://dx.doi.org/10.1002/(sici)1521-3951(200008)220:2<897::aid-pssb897>3.0.co;2-g.

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Li, Yan, Sefaattin Tongay, Qu Yue, Jun Kang, Junqiao Wu, and Jingbo Li. "Metal to semiconductor transition in metallic transition metal dichalcogenides." Journal of Applied Physics 114, no. 17 (November 7, 2013): 174307. http://dx.doi.org/10.1063/1.4829464.

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Sklyarchuk, V., Yu Plevachuk, S. Mudry, I. Shtablavyi, and B. Sokolovskii. "Semiconductor-metal transition in semiconductor melts with 3d metal admixtures." Journal of Physics: Conference Series 98, no. 6 (February 1, 2008): 062003. http://dx.doi.org/10.1088/1742-6596/98/6/062003.

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FLORES, F. "ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION." Surface Review and Letters 02, no. 04 (August 1995): 513–37. http://dx.doi.org/10.1142/s0218625x95000480.

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Alkali metals deposited on weakly ionic semiconductors are neither reactive nor form large three-dimensional islands, offering an ideal system in which Schottky junctions can be analyzed. In this paper, the alkali-metal-semiconductor interface is reviewed with a special emphasis on the formation of the Schottky barrier. Two regimes are clearly differentiated for the deposition of AMs on a semiconductor: in the high-coverage limit the Schottky barrier is shown to depend, for not very defective interfaces, on the semiconductor charge neutrality level. For low coverages, different one- and two-dimensional structures appear on the semiconductor surface presenting an insulating behavior. For depositions around a metal monolayer, a Mott metal-insulator transition appears; then, the interface Fermi energy is pinned by the metallic density of states at the position determined by the semiconductor charge neutrality level. This situation defines the Schottky barrier height of a thick-metal overlayer.
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García, Gregorio, Pablo Sánchez-Palencia, Pablo Palacios, and Perla Wahnón. "Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials." Nanomaterials 10, no. 2 (February 7, 2020): 283. http://dx.doi.org/10.3390/nano10020283.

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This work explores the possibility of increasing the photovoltaic efficiency of InP semiconductors through a hyperdoping process with transition metals (TM = Ti, V, Cr, Mn). To this end, we investigated the crystal structure, electronic band and optical absorption features of TM-hyperdoped InP (TM@InP), with the formula TMxIn1-xP (x = 0.03), by using accurate ab initio electronic structure calculations. The analysis of the electronic structure shows that TM 3d-orbitals induce new states in the host semiconductor bandgap, leading to improved absorption features that cover the whole range of the sunlight spectrum. The best results are obtained for Cr@InP, which is an excellent candidate as an in-gap band (IGB) absorber material. As a result, the sunlight absorption of the material is considerably improved through new sub-bandgap transitions across the IGB. Our results provide a systematic and overall perspective about the effects of transition metal hyperdoping into the exploitation of new semiconductors as potential key materials for photovoltaic applications.
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Gilman, John J. "Insulator-metal transitions at microindentations." Journal of Materials Research 7, no. 3 (March 1992): 535–38. http://dx.doi.org/10.1557/jmr.1992.0535.

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For all tetrahedrally bonded semiconductors (five group IV plus nine III-V compounds and nine II-VI compounds), it is shown that the critical pressure needed to transform the semiconductor into the metallic state correlates with the microindentation hardness number. The same is done for five alkaline earth oxides. The critical transition pressures have been estimated from Herzfeld's theory—that is, from the compression at which the dielectric constant diverges to infinity. Experimental transition pressures also correlate with hardness numbers, and they correlate with the activation energies for dislocation motion. Since these transitions are electronic they can be influenced by photons, doping (donors enhance while acceptors inhibit them), currents, surface states, etc. Microindentation also provides a simple experimental tool for observing pressure and/or shear induced transformations.
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Xie, Lu, and Xiaodong Cui. "Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides." Proceedings of the National Academy of Sciences 113, no. 14 (March 21, 2016): 3746–50. http://dx.doi.org/10.1073/pnas.1523012113.

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Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The spin-polarized photocurrent is achieved through the valley-dependent optical selection rules and the spin–valley locking in monolayer WS2, and electrically detected by a lateral spin–valve structure with ferromagnetic contacts. The demonstrated long spin–valley lifetime, the unique valley-contrasted physics, and the spin–valley locking make monolayer WS2 an unprecedented candidate for semiconductor-based spintronics.
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Peng, S., and K. Cho. "Nano Electro Mechanics of Semiconducting Carbon Nanotube." Journal of Applied Mechanics 69, no. 4 (June 20, 2002): 451–53. http://dx.doi.org/10.1115/1.1469003.

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The effect of a flattening distortion on the electronic properties of a semiconducting carbon nanotube is investigated through first-principles calculations. As a function of the mechanical deformation, electronic bandgap is reduced leading to a semiconductor-metal transition. However, further deformation reopens the bandgap and induces a metal-semiconductor transition. The semiconductor–metal transitions take place as a result of curvature-induced hybridization effects, and this finding can be applied to develop novel nano electro mechanical systems.
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Ding, Jiheng, Hongran Zhao, Xinpeng Zhao, Beiyu Xu, and Haibin Yu. "How semiconductor transition metal dichalcogenides replaced graphene for enhancing anticorrosion." Journal of Materials Chemistry A 7, no. 22 (2019): 13511–21. http://dx.doi.org/10.1039/c9ta04033a.

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Dong, Haixia, Yang Zhang, Dangqi Fang, Baihua Gong, Erhu Zhang, and Shengli Zhang. "Metal–semiconductor–metal transition in zigzag carbon nanoscrolls." Nanoscale 8, no. 5 (2016): 2887–91. http://dx.doi.org/10.1039/c5nr07628e.

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Dissertations / Theses on the topic "Semiconductor to metal transition"

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Luo, Ming. "Transition-metal ions in II-VI semiconductors ZnSe and ZnTe /." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4630.

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Thesis (Ph. D.)--West Virginia University, 2006.
Title from document title page. Document formatted into pages; contains xiv, 141 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 135-141).
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Kashefi-Naini, A. "A study of some transition metal-silicon Schottky barrier diodes." Thesis, University of Kent, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375200.

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Kajikawa, Hiroaki. "Slow dynamics in the semiconductor-metal transition region of liquid chalcogens." 京都大学 (Kyoto University), 2007. http://hdl.handle.net/2433/136830.

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Peleckis, Germanas. "Studies on diluted oxide magnetic semiconductors for spin electronic applications." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20070821.145447/index.html.

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Proskuryakov, Yuri. "Interactions, localisation and the metal to insulator transition in two-dimensional semiconductor systems." Thesis, University of Exeter, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288367.

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Hall, Ralph Stephen. "Photocapacitance studies of transition metal related deep levels in III-V and II-VI semiconducters." Thesis, University of St Andrews, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329476.

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Stollenwerk, Tobias [Verfasser]. "Ferromagnetic Semiconductor-Metal Transition in Heterostructures of Electron Doped Europium Monoxide / Tobias Stollenwerk." Bonn : Universitäts- und Landesbibliothek Bonn, 2013. http://d-nb.info/1045276324/34.

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Ramanathan, Sivakumar. "Optical and electrical properties of compound and transition metal doped compound semiconductor nanowires." VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/1667.

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Nanotechnology is the science and engineering of creating functional materials by precise control of matter at nanometer (nm) length scale and exploring novel properties at that scale. It is vital to understand the quantum mechanical phenomena manifested at nanometer scale dimensions since that will enable us to precisely engineer quantum mechanical properties to realize novel device functionalities. This dissertation investigates optical and electronic properties of compound and transition metal doped compound semiconductor nanowires with a view to exploiting them for a wide range of applications in semiconductor electronic and optical devices. In this dissertation work, basic concepts of optical and electronic properties at low dimensional structures will be discussed in chapter 1. Chapter 2 discusses the nanofabrication technique employed to fabricate highly ordered nanowires. Using this method, which is based on electrochemical self-assembly techniques, we can fabricate highly ordered and size controlled nanowires and quantum dots of different materials. In Chapter 3, we report size dependent fluorescence spectroscopy of ZnSe and Mn doped ZnSe nanowires fabricated by the above method. The nanowires exhibit blue shift in the emission spectrum due to quantum confinement effect, which increases the effective bandgap of the semiconductor. We found that the fluorescence spectrum of Mn doped ZnSe nanowires shows high luminescence efficiency, which seems to increase with increasing Mn concentration. These results are highly encouraging for applications in multi spectral displays. Chapter 4 investigates field emission results of highly ordered 50 nm tapered ZnO nanowires that were also fabricated by electrochemical self-assembly. Subsequent to fabrication, the nanowires tips are exposed by chemical etching which renders the tips conical in shape. This tapered shape concentrates the electric field lines at the tip of the wires, and that, in turn, increases the emission current density while lowering the threshold field for the onset of field emission. Measurement of the Fowler-Nordheim tunneling current carried out in partial vacuum indicates that the threshold electric field for field emission in 50-nm diameter ZnO nanowires is 15 V/µm. In this study we identified the key constraint that can increase the threshold field and reduce emission current density. In Chapter 5 we report optical and magnetic measurement of Mn-doped ZnO nanowires. Hysterisis measurements carried out at various temperatures show a ferromagnetic behavior with a Curie temperature of ~ 200 K. We also studied Mn-doping of the ZnO nanowires. The room temperature fluorescence spectroscopy of Mn-doped ZnO nanowires shows a red-shift in the spectra compared to the undoped ZnO nanowires possibly due to strain introduced by the dopants in the nanowires. Finally, in Chapter 6, we report our study of the ensemble averaged transverse spin relaxation time (T2*) in InSb thin films and nanowires using electron spin resonance (ESR) measurement. Unfortunately, the nanowires contained too few spins to produce a detectable signal in our apparatus, but the thin films contained enough spins (> 109/cm2) to produce a measurable ESR signal. We found that the T2* decreases rapidly with increasing temperature between 3.5 K and 20 K, which indicates that spin-dephasing is primarily caused by spin-phonon interactions.
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Wright, Trevor. "A comparison of the metal-insulator transitions amporphous metal-semiconductor alloys." Thesis, University of Cambridge, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264356.

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Hart, Lewis. "Novel transition metal dichalcogenide semiconductors and heterostructures." Thesis, University of Bath, 2018. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.760986.

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Rhenium diselenide and rhenium disulphide are layered semiconductors that belong to the transition metal dichalcogenide (TMD) family. Like graphene and other TMDs, these materials can be exfoliated down to a few atomic layers. However, unlike other TMDs, the rhenium dichalcogenides are only stable in a triclinic structure that exhibits in-plane anisotropy. This anisotropy manifests itself in the vibrational, optical and electronic transport properties ofthese crystals. Ab initio calculations and experimental results are presented to describe the Raman spectra of the rhenium dichalcogenides. From Raman spectroscopy the anisotropy of these crystals can be observed. Flipping a flake (a C2 rotation about an axis in the layer plane) is not a symmetry of the system. Therefore, there are two non-equivalent vertical orientations. Raman spectroscopy can be used to identify whether a flake is facing "up" or "down". The latticedynamics of these crystals are described using a simple ball and spring model. It is shown that low mass impurities, such as sulphur, in ReSe2 can occupy four non-equivalent positions of the unit cell; there are four local vibrational modes corresponding to these four positions and Raman spectroscopy can be used to find them. An unusual experimental geometry (edge-on excitation) helps enhance these signals. The electronic band structures of bulk ReSe2 and ReS2 are explored using angle-resolved photoemission spectroscopy (ARPES). From the measurements and complementary DFT calculations it is shown that: (i) there is anisotropy in the electronic dispersions; (ii) the valence band maxima are not located along any of the high symmetry directions; and (iii) both of these crystals have indirect band gaps. The rhenium dichalcogenides were thought to act as electronically decoupled monolayers; it is demonstrated that this is not the case and that thereis signicant electronic coupling between the layers. Finally, ARPES results of a monolayer of ReSe2 are presented; again, anisotropy in the electronic band structure is observed.
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Books on the topic "Semiconductor to metal transition"

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Berg, A. M. Transition metal dislocation interactions in semiconductor silicon. Manchester: UMIST, 1993.

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M, Omelʹi͡anovskiĭ Ė. Transition metal impurities in semiconductors. Bristol: A. Hilger, 1986.

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Omelʹi͡anovsʹkyĭ, M. E. Transition metal impurities in semiconductors. Bristol: Hilger, 1986.

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Kikoin, K. A. Transition metal impurities in semiconductors: Electronic structure and physical properties. Singapore: World Scientific, 1994.

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Symposium on III-V Nitride Materials and Processes (3rd 1998 Boston, Mass.). Proceedings of the Third Symposium on III-V Nitride Materials and Processes. Edited by Moustakas T. D, Mohney S. E, Pearton S. J, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society. High Temperature Materials Division. Pennington, N.J: Electrochemical Society, Inc., 1999.

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Symposium, on III-V. Nitride Materials and Processes (2nd 1997 Paris France). Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1998.

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Symposium, on III-V. Nitride Materials and Processes (1st 1996 Los Angeles Calif ). Proceedings of the First Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1996.

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Dreyhsig, Jörg. The multiplet problem of 3d transition metal impurities in semiconductors: General aspects and the specific properties of semiconductors doped with cobalt. Berlin: W & T Verlag, 1994.

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1919-, Finlayson D. M., ed. Localisation and interaction in disordered metals and doped semiconductors: Proceedings of the Thirty-First Scottish Universities' Summer School in Physics, St. Andrews, August 1986 : a NATO Advanced Study Institute. Edinburgh: The School, 1986.

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H, Williams R., ed. Metal-semiconductor contacts. 2nd ed. Oxford [England]: Clarendon Press, 1988.

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Book chapters on the topic "Semiconductor to metal transition"

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Calandra, C. "Properties of Transition Metal Silicides." In Semiconductor Silicon, 252–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_19.

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Bugayev, A. A., F. A. Chudnovskii, and B. P. Zakharchenya. "A Study of the Metal — Semiconductor Transition in Vanadium Oxides." In Semiconductor Physics, 265–92. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4615-7840-6_13.

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Allgaier, R. S. "Metal-Semiconductor Transitions in Doped IV-VI Semiconductors." In Localization and Metal-Insulator Transitions, 25–37. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8_3.

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Gaspard, J. P., C. Bichara, A. Pellegatti, R. Céolin, and R. Bellissent. "Melting of Elemental and Compound Semiconductors: A Semiconductor-Metal Transition?" In Metallic Alloys: Experimental and Theoretical Perspectives, 129–38. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1092-1_15.

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Veal, T. D., P. D. C. King, and C. F. McConville. "Electronic Properties of Post-transition Metal Oxide Semiconductor Surfaces." In Functional Metal Oxide Nanostructures, 127–45. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_6.

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Carmo, M. C. "Transition Metals in Silicon." In Phonons in Semiconductor Nanostructures, 403–12. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1683-1_39.

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Katsumoto, S. "Photo-Induced Metal-Insulator Transition in a Semiconductor." In Localization and Confinement of Electrons in Semiconductors, 117–26. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84272-6_13.

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Proshchenko, Vitaly, and Yuri Dahnovsky. "Transition Metal-Doped Semiconductor Quantum Dots: Tunable Emission." In Photoinduced Processes at Surfaces and in Nanomaterials, 117–35. Washington, DC: American Chemical Society, 2015. http://dx.doi.org/10.1021/bk-2015-1196.ch005.

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Baeriswyl, D., and E. Jeckelmann. "On the Semiconductor-Metal Transition in Conducting Polymers." In Electronic Properties of Polymers, 16–20. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84705-9_3.

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Cutler, M., and H. Rasolondramanitra. "The Semiconductor-To-Metal Transition in Liquid SE-TE Alloys." In Localization and Metal-Insulator Transitions, 119–36. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4613-2517-8_11.

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Conference papers on the topic "Semiconductor to metal transition"

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Breuer, Steffen, Robert B. Kohlhaas, Simon Nellen, Lars Liebermeister, Bjorn Globisch, Martin Schell, Mykhaylo P. Semtsiv, and W. Ted Masselink. "Transition Metal Doped InGaAs Photoconductors for THz Detectors." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819317.

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Mirov, S., I. Moskalev, V. Fedorov, D. Martyshkin, M. Mirov, and N. Myoung. "Mid-Infrared transition metal doped II-VI semiconductor lasers." In Laser Science. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/ls.2011.ltha3.

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Forcherio, Gregory T., Luigi Bonacina, Jérémy Riporto, Yannick Mugnier, Ronan Le Dantec, Jeremy R. Dunklin, Mourad Benamara, and Donald K. Roper. "Integrating plasmonic metals and 2D transition metal dichalcogenides for enhanced nonlinear frequency conversion." In Physical Chemistry of Semiconductor Materials and Interfaces XVII, edited by Hugo A. Bronstein and Felix Deschler. SPIE, 2018. http://dx.doi.org/10.1117/12.2321047.

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Aldrigo, Martino, Mircea Dragoman, and Diego Masotti. "Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices." In 2018 International Semiconductor Conference (CAS). IEEE, 2018. http://dx.doi.org/10.1109/smicnd.2018.8539834.

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Katzer, D. Scott, Neeraj Nepal, Matthew T. Hardy, Brian P. Downey, David F. Storm, Eric N. Jin, David J. Meyer, et al. "Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819351.

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Yu, Shifeng, Shuyu Wang, Ming Lu, and Lei Zuo. "Semiconductor to Metal Transition Study of Oxidized Vanadium Thin Film." In ASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/detc2017-67926.

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Since vanadium atom has a half-filled d-shell, there exist a set of valence states to form a number of oxide phases. In this paper, the deposited vanadium thin film is oxidized under different conditions. The electrical characterization shows some oxides of vanadium undergo a transition from semiconductor state to a metal phase at a critical temperature. Such vanadium oxides have potential use, particularly in thin film form, for a wide variety of applications involving thermally activated electronic switching devices. The surface morphology is studied under SEM. The temperature coefficient of resistivity of other vanadium oxide states is studied as well.
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Matsui, Takashi, Haruki Matsuno, Hisashi Kotegawa, Hideki Tou, Koichiro Suekuni, Takumi Hasegawa, Hiromi I. Tanaka, and Toshiro Takabatake. "Zn-Substitution Effect on Metal-Semiconductor Transition in Tetrahedrite Cu12Sb4S13." In Proceedings of J-Physics 2019: International Conference on Multipole Physics and Related Phenomena. Journal of the Physical Society of Japan, 2020. http://dx.doi.org/10.7566/jpscp.29.013008.

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Aliev, Vladimir Sh, and Sergey G. Bortnikov. "Bolometer at semiconductor-metal phase transition in VO2 thin films." In 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011). IEEE, 2011. http://dx.doi.org/10.1109/edm.2011.6006913.

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Gilev, S. D., and A. M. Trubachev. "A study of semiconductor-metal transition in shocked monocrystal silicon." In The tenth American Physical Society topical conference on shock compression of condensed matter. AIP, 1998. http://dx.doi.org/10.1063/1.55591.

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Masud, Md G., Arijit Ghosh, Jhuma Sannigrahi, and B. K. Chaudhuri. "Metal-semiconductor transition and ferroelectricity in charge ordered La0.5Ba0.5FeO3 perovskite." In SOLID STATE PHYSICS: Proceedings of the 56th DAE Solid State Physics Symposium 2011. AIP, 2012. http://dx.doi.org/10.1063/1.4710324.

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Reports on the topic "Semiconductor to metal transition"

1

Author, Not Given. (Non-empirical interatomic potentials for transition metals, alloys, and semiconductors). Office of Scientific and Technical Information (OSTI), January 1990. http://dx.doi.org/10.2172/6521472.

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Murthy, C. S., B. M. Rice, and M. J. Redmon. Growth Studies of Metal-Metal/Semiconductor Structures. Fort Belvoir, VA: Defense Technical Information Center, March 1989. http://dx.doi.org/10.21236/ada206988.

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Carlsson, A. E. Multi-body forces and the energetics of transition metals, alloys, and semiconductors. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5097743.

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Carlsson, A. E. Multi-body forces and the energetics of transition metals, alloys, and semiconductors. Office of Scientific and Technical Information (OSTI), January 1992. http://dx.doi.org/10.2172/7039733.

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Armentrout, Peter B. Transition Metal Cluster Chemistry. Fort Belvoir, VA: Defense Technical Information Center, October 1987. http://dx.doi.org/10.21236/ada188731.

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White, Carter James. Selenophene transition metal complexes. Office of Scientific and Technical Information (OSTI), July 1994. http://dx.doi.org/10.2172/10190649.

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Semendy, Fred, Greg Meissner, and Priyalal Wijewarnasuriya. Sulfur Implanted Black Silicon for Metal Semiconductor Metal (MSM) Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, December 2012. http://dx.doi.org/10.21236/ada571896.

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Gallaway, J. Clusters of Transition Metal Atoms. Fort Belvoir, VA: Defense Technical Information Center, January 1988. http://dx.doi.org/10.21236/ada191265.

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Callaway, J. Clusters of Transition Metal Atoms. Fort Belvoir, VA: Defense Technical Information Center, January 1985. http://dx.doi.org/10.21236/ada153126.

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Brown, Steven. Studies in transition metal chemistry. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.2611.

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