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1

Berg, A. M. Transition metal dislocation interactions in semiconductor silicon. Manchester: UMIST, 1993.

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2

M, Omelʹi͡anovskiĭ Ė. Transition metal impurities in semiconductors. Bristol: A. Hilger, 1986.

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3

Omelʹi͡anovsʹkyĭ, M. E. Transition metal impurities in semiconductors. Bristol: Hilger, 1986.

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4

Kikoin, K. A. Transition metal impurities in semiconductors: Electronic structure and physical properties. Singapore: World Scientific, 1994.

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5

Symposium on III-V Nitride Materials and Processes (3rd 1998 Boston, Mass.). Proceedings of the Third Symposium on III-V Nitride Materials and Processes. Edited by Moustakas T. D, Mohney S. E, Pearton S. J, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society. High Temperature Materials Division. Pennington, N.J: Electrochemical Society, Inc., 1999.

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6

Symposium, on III-V. Nitride Materials and Processes (2nd 1997 Paris France). Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1998.

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7

Symposium, on III-V. Nitride Materials and Processes (1st 1996 Los Angeles Calif ). Proceedings of the First Symposium on III-V Nitride Materials and Processes. Pennington, NJ: Electrochemical Society, 1996.

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8

Dreyhsig, Jörg. The multiplet problem of 3d transition metal impurities in semiconductors: General aspects and the specific properties of semiconductors doped with cobalt. Berlin: W & T Verlag, 1994.

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9

1919-, Finlayson D. M., ed. Localisation and interaction in disordered metals and doped semiconductors: Proceedings of the Thirty-First Scottish Universities' Summer School in Physics, St. Andrews, August 1986 : a NATO Advanced Study Institute. Edinburgh: The School, 1986.

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10

H, Williams R., ed. Metal-semiconductor contacts. 2nd ed. Oxford [England]: Clarendon Press, 1988.

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11

International Conference on Heavy Doping and the Metal-Insulator Transition in Semiconductors (1984 Santa Cruz). Heavy doping and the metal-insulator transition in semiconductors: International conference, University of California at Santa Cruz, California, U.S.A., 30 July-3 August 1984. Edited by Landsberg P. T. 1922-. New York: Pergamon Press, 1985.

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12

Lu, Jian. Temporal response of metal-semiconductor-metal photodetector. Ottawa: National Library of Canada, 1993.

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13

Rao, C. N. R. Transition metal oxides. New York: VCH, 1995.

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14

1940-, Raveau B., ed. Transition metal oxides. New York: VCH, 1995.

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15

Weber, Thomas, Roel Prins, and Rutger A. Santen, eds. Transition Metal Sulphides. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-017-3577-3.

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16

Munich), NATO Advanced Research Workshop on Metallization and Metal-Semiconductor Interfaces (1988 Technical University of. Metallization and metal-semiconductor interfaces. New York: Plenum Press, 1989.

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17

Sh, Gildenblat Gennady, ed. Metal-semiconductor contacts and devices. Orlando: Academic Press, 1986.

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18

Batra, Inder P. Metallization and Metal-Semiconductor Interfaces. Boston, MA: Springer US, 1989.

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19

Batra, Inder P., ed. Metallization and Metal-Semiconductor Interfaces. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2.

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20

Glazov, V. M., and L. M. Pavlova. Semiconductor and Metal Binary Systems. Edited by E. A. D. White. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-1680-0.

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21

Chen, Tupei, and Yang Liu, eds. Semiconductor Nanocrystals and Metal Nanoparticles. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor &: CRC Press, 2016. http://dx.doi.org/10.1201/9781315374628.

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22

Yam, Vivian W. W., ed. Photofunctional Transition Metal Complexes. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-36810-6.

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23

Mathey, Francois. Transition Metal Organometallic Chemistry. Singapore: Springer Singapore, 2013. http://dx.doi.org/10.1007/978-981-4451-09-3.

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24

Stiefel, Edward I., and Kazuko Matsumoto, eds. Transition Metal Sulfur Chemistry. Washington, DC: American Chemical Society, 1996. http://dx.doi.org/10.1021/bk-1996-0653.

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25

Kreißl, F. R., ed. Transition Metal Carbyne Complexes. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1666-4.

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26

Nishibayashi, Yoshiaki, ed. Transition Metal-Dinitrogen Complexes. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2019. http://dx.doi.org/10.1002/9783527344260.

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27

R, Kreissl F., and North Atlantic Treaty Organization. Scientific Affairs Division., eds. Transition metal carbyne complexes. Dordrecht: Kluwer Academic, 1993.

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28

Monch, Winfried. Electronic Structure of Metal-Semiconductor Contacts. Dordrecht: Springer Netherlands, 1990.

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29

Mönch, Winfried, ed. Electronic Structure of Metal-Semiconductor Contacts. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0657-0.

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30

Sato, Norio. Electrochemistry at metal and semiconductor electrodes. Amsterdam: Elsevier, 1998.

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31

Bentarzi, Hamid. Transport in Metal-Oxide-Semiconductor Structures. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-16304-3.

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32

Lee, E. T. C. The superconductor-semiconductor transition inBaBi1-xPbx03. Manchester: UMIST, 1994.

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33

Davies, Geoffrey. Studies in transition metal chemistry. Birmingham: University of Birmingham, 1986.

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34

Concepts in transition metal chemistry. United Kingdom: Royal Society of Chemistry in association with the Open University, 2010.

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35

Maekawa, Sadamichi. Physics of Transition Metal Oxides. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004.

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36

Scott, McIndoe J., ed. Transition metal carbonyl cluster chemistry. Amsterdam, The Netherlands: Gordon and Breach Science Publishers, 2000.

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37

Arul, Narayanasamy Sabari, and Vellalapalayam Devaraj Nithya, eds. Two Dimensional Transition Metal Dichalcogenides. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-9045-6.

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38

Gebhard, Florian. The Mott Metal-Insulator Transition. Berlin, Heidelberg: Springer Berlin Heidelberg, 1997. http://dx.doi.org/10.1007/3-540-14858-2.

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39

Qiu, Zaozao. Late Transition Metal-Carboryne Complexes. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24361-5.

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40

Kolobov, Alexander V., and Junji Tominaga. Two-Dimensional Transition-Metal Dichalcogenides. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-31450-1.

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41

Kotschy, András, and Géza Timári. Heterocycles from Transition Metal Catalysis. Dordrecht: Springer Netherlands, 2005. http://dx.doi.org/10.1007/1-4020-3692-2.

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42

Maekawa, Sadamichi, Takami Tohyama, Stewart E. Barnes, Sumio Ishihara, Wataru Koshibae, and Giniyat Khaliullin. Physics of Transition Metal Oxides. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09298-9.

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43

name, No. Late transition metal polymerization catalysis. Weinheim: Wiley-VCH, 2003.

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44

Rare Earth and Transition Metal Doping of Semiconductor Materials. Elsevier, 2016. http://dx.doi.org/10.1016/c2014-0-00833-7.

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45

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. Elsevier Science & Technology, 2016.

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46

Kasper, Erich, Matty Caymax, Ken Rim, Shigeaki Zaima, and Paulo F. P. Fichtner. High-Mobility Group-IV Materials and Devices: Volume 809. University of Cambridge ESOL Examinations, 2014.

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47

Matty, Caymax, Materials Research Society Meeting, and Symposium on High-Mobility Group-IV Materials and Devices (2004 : Francisco, Calif.), eds. High-mobility group-IV materials and devices: Symposium held April 13-15, 2004, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 2004.

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48

Vurgaftman, Igor, Matthew P. Lumb, and Jerry R. Meyer. Bands and Photons in III-V Semiconductor Quantum Structures. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198767275.001.0001.

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Abstract:
Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader does not need to consult other references to fully understand the material, although a few handpicked sources are listed for those who would like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensional arguments whenever they can help the reader’s understanding. A substantial fraction of the material in this book has not appeared in print anywhere else, including journal publications.
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49

Moustakas, T. D. Iii-V Nitride Materials & Processes III (Electrochemical Society Proceedings). Electrochemical Society, 1998.

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50

A, Hiraki, ed. Metal-semiconductor interfaces. Tokyo, Japan: Ohmsha, 1995.

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