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Journal articles on the topic 'Semiconductor to metal transition'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Peter, A. John, and K. Navaneethakrishnan. "Semiconductor-Metal Transition in Many-Valley Semiconductors." physica status solidi (b) 220, no. 2 (August 2000): 897–907. http://dx.doi.org/10.1002/(sici)1521-3951(200008)220:2<897::aid-pssb897>3.0.co;2-g.

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2

Li, Yan, Sefaattin Tongay, Qu Yue, Jun Kang, Junqiao Wu, and Jingbo Li. "Metal to semiconductor transition in metallic transition metal dichalcogenides." Journal of Applied Physics 114, no. 17 (November 7, 2013): 174307. http://dx.doi.org/10.1063/1.4829464.

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3

Sklyarchuk, V., Yu Plevachuk, S. Mudry, I. Shtablavyi, and B. Sokolovskii. "Semiconductor-metal transition in semiconductor melts with 3d metal admixtures." Journal of Physics: Conference Series 98, no. 6 (February 1, 2008): 062003. http://dx.doi.org/10.1088/1742-6596/98/6/062003.

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4

FLORES, F. "ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION." Surface Review and Letters 02, no. 04 (August 1995): 513–37. http://dx.doi.org/10.1142/s0218625x95000480.

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Alkali metals deposited on weakly ionic semiconductors are neither reactive nor form large three-dimensional islands, offering an ideal system in which Schottky junctions can be analyzed. In this paper, the alkali-metal-semiconductor interface is reviewed with a special emphasis on the formation of the Schottky barrier. Two regimes are clearly differentiated for the deposition of AMs on a semiconductor: in the high-coverage limit the Schottky barrier is shown to depend, for not very defective interfaces, on the semiconductor charge neutrality level. For low coverages, different one- and two-dimensional structures appear on the semiconductor surface presenting an insulating behavior. For depositions around a metal monolayer, a Mott metal-insulator transition appears; then, the interface Fermi energy is pinned by the metallic density of states at the position determined by the semiconductor charge neutrality level. This situation defines the Schottky barrier height of a thick-metal overlayer.

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5

García, Gregorio, Pablo Sánchez-Palencia, Pablo Palacios, and Perla Wahnón. "Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials." Nanomaterials 10, no. 2 (February 7, 2020): 283. http://dx.doi.org/10.3390/nano10020283.

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This work explores the possibility of increasing the photovoltaic efficiency of InP semiconductors through a hyperdoping process with transition metals (TM = Ti, V, Cr, Mn). To this end, we investigated the crystal structure, electronic band and optical absorption features of TM-hyperdoped InP (TM@InP), with the formula TMxIn1-xP (x = 0.03), by using accurate ab initio electronic structure calculations. The analysis of the electronic structure shows that TM 3d-orbitals induce new states in the host semiconductor bandgap, leading to improved absorption features that cover the whole range of the sunlight spectrum. The best results are obtained for Cr@InP, which is an excellent candidate as an in-gap band (IGB) absorber material. As a result, the sunlight absorption of the material is considerably improved through new sub-bandgap transitions across the IGB. Our results provide a systematic and overall perspective about the effects of transition metal hyperdoping into the exploitation of new semiconductors as potential key materials for photovoltaic applications.

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6

Gilman, John J. "Insulator-metal transitions at microindentations." Journal of Materials Research 7, no. 3 (March 1992): 535–38. http://dx.doi.org/10.1557/jmr.1992.0535.

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For all tetrahedrally bonded semiconductors (five group IV plus nine III-V compounds and nine II-VI compounds), it is shown that the critical pressure needed to transform the semiconductor into the metallic state correlates with the microindentation hardness number. The same is done for five alkaline earth oxides. The critical transition pressures have been estimated from Herzfeld's theory—that is, from the compression at which the dielectric constant diverges to infinity. Experimental transition pressures also correlate with hardness numbers, and they correlate with the activation energies for dislocation motion. Since these transitions are electronic they can be influenced by photons, doping (donors enhance while acceptors inhibit them), currents, surface states, etc. Microindentation also provides a simple experimental tool for observing pressure and/or shear induced transformations.

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7

Xie, Lu, and Xiaodong Cui. "Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides." Proceedings of the National Academy of Sciences 113, no. 14 (March 21, 2016): 3746–50. http://dx.doi.org/10.1073/pnas.1523012113.

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Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The spin-polarized photocurrent is achieved through the valley-dependent optical selection rules and the spin–valley locking in monolayer WS2, and electrically detected by a lateral spin–valve structure with ferromagnetic contacts. The demonstrated long spin–valley lifetime, the unique valley-contrasted physics, and the spin–valley locking make monolayer WS2 an unprecedented candidate for semiconductor-based spintronics.

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8

Peng, S., and K. Cho. "Nano Electro Mechanics of Semiconducting Carbon Nanotube." Journal of Applied Mechanics 69, no. 4 (June 20, 2002): 451–53. http://dx.doi.org/10.1115/1.1469003.

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The effect of a flattening distortion on the electronic properties of a semiconducting carbon nanotube is investigated through first-principles calculations. As a function of the mechanical deformation, electronic bandgap is reduced leading to a semiconductor-metal transition. However, further deformation reopens the bandgap and induces a metal-semiconductor transition. The semiconductor–metal transitions take place as a result of curvature-induced hybridization effects, and this finding can be applied to develop novel nano electro mechanical systems.

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9

Ding, Jiheng, Hongran Zhao, Xinpeng Zhao, Beiyu Xu, and Haibin Yu. "How semiconductor transition metal dichalcogenides replaced graphene for enhancing anticorrosion." Journal of Materials Chemistry A 7, no. 22 (2019): 13511–21. http://dx.doi.org/10.1039/c9ta04033a.

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10

Dong, Haixia, Yang Zhang, Dangqi Fang, Baihua Gong, Erhu Zhang, and Shengli Zhang. "Metal–semiconductor–metal transition in zigzag carbon nanoscrolls." Nanoscale 8, no. 5 (2016): 2887–91. http://dx.doi.org/10.1039/c5nr07628e.

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11

Sleight, Arthur W., and Uma Chowdhry. "Superconductivity and the Metal-Semiconductor Transition." Advanced Ceramic Materials 2, no. 3B (July 1987): 713–18. http://dx.doi.org/10.1111/j.1551-2916.1987.tb00138.x.

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12

Lima, Gilson A. R., Adalberto Fazzio, and Ronaldo Mota. "Metal-semiconductor transition in cerium hydrides." International Journal of Quantum Chemistry 36, S23 (June 19, 2009): 709–16. http://dx.doi.org/10.1002/qua.560360873.

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13

Bartwal, K. S., B. Das, and O. N. Srivastava. "Metal-semiconductor transition in TiS1.7 crystals." Crystal Research and Technology 20, no. 9 (September 1985): K87—K89. http://dx.doi.org/10.1002/crat.2170200928.

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14

Ishikawa, K., W. Shibata, K. Watanabe, T. Isonaga, M. Hashimoto, and Y. Suzuki. "Metal–Semiconductor Transition of La2NiO4+δ." Journal of Solid State Chemistry 131, no. 2 (July 1997): 275–81. http://dx.doi.org/10.1006/jssc.1997.7375.

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15

Cho, Suyeon, Sera Kim, Jinbong Seok, and Heejun Yang. "Applications of metal-semiconductor phase transition in 2D layered transition metal dichalcogenides." Vacuum Magazine 3, no. 1 (March 30, 2016): 4–8. http://dx.doi.org/10.5757/vacmac.3.1.4.

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16

Chen, Qifan, Mingwei Chen, Linggang Zhu, Naihua Miao, Jian Zhou, Graeme J. Ackland, and Zhimei Sun. "Composition-Gradient-Mediated Semiconductor–Metal Transition in Ternary Transition-Metal-Dichalcogenide Bilayers." ACS Applied Materials & Interfaces 12, no. 40 (September 11, 2020): 45184–91. http://dx.doi.org/10.1021/acsami.0c13104.

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17

Hwang, Jeongwoon, Young Jun Oh, Jiyoung Kim, Myung Mo Sung, and Kyeongjae Cho. "Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition." Journal of Applied Physics 123, no. 15 (April 21, 2018): 154301. http://dx.doi.org/10.1063/1.5024200.

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18

Leong, Wei Sun, Qingqing Ji, Nannan Mao, Yimo Han, Haozhe Wang, Aaron J. Goodman, Antoine Vignon, et al. "Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides." Journal of the American Chemical Society 140, no. 39 (September 20, 2018): 12354–58. http://dx.doi.org/10.1021/jacs.8b07806.

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19

Endo, Hirohisa, Kozaburo Tamura, and Makoto Yao. "Liquid metals and semiconductors under pressure." Canadian Journal of Physics 65, no. 3 (March 1, 1987): 266–85. http://dx.doi.org/10.1139/p87-036.

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Studies on the electronic and thermodynamic properties of liquid metals and semiconductors at high temperatures and high pressures are reviewed. A substantial decrease of volume for liquid alkali metals is brought about by the application of pressure. The interference function of liquid alkali metals with high pressure can be described by the hard-sphere model with a fixed packing fraction when one proceeds along the melting curve. For liquid Cs, the s–d resonance scattering plays an important role in the electron-transport properties at high pressures. In expanded liquid Hg, a metal–nonmetal transition occurs at a density near 9 g∙cm−3, and anomalous behaviour is found in the thermodynamic properties such as equation-of-state and density fluctuations. At low densities, substantial volume contraction and a large increase in conductivity are brought about by the addition of a small amount of Bi. At high temperatures and high pressures, liquid Se is transformed from a semiconducting state to a metallic state, accompanied by modification of chain structure. The measurements of sound velocity and optical properties reveal that the temperature and pressure at which the semiconductor–metal transition occurs are lowered by the addition of Te. It is suggested that the semiconductor–metal transition observed in liquid Se is induced by increasing fluctuations in the interchain distance and increasing interchain coupling. The electronic properties of liquid Se are substantially changed by the addition of impurity elements such as alkalis and halogens. Modification of chain structure is associated with the charge transfer between Se chains and impurity elements. To understand how the interchain coupling affects the electronic properties of liquid Se, the properties of the isolated Se chains confined in the pores of mordenite are studied. The pressure effects on the two-phase separation of liquid binary mixtures, such as metal–metal, metal–semiconductor, and metal – ionic salt mixtures, are also discussed.

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20

Arslanov, R. K., T. R. Arslanov, I. V. Fedorchenko, and A. L. Zheludkevich. "Semiconductor–Metal Transition in Magnetic Semiconductor Compounds at High Pressure." Journal of Experimental and Theoretical Physics 130, no. 1 (January 2020): 94–100. http://dx.doi.org/10.1134/s106377611912001x.

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21

Rabinal, M. K., S. Asokan, M. O. Godazaev, N. T. Mamedov, and E. S. R. Gopal. "Pressure Induced Semiconductor-Metal Transition in Tl-Se Layered Semiconductor." physica status solidi (b) 167, no. 2 (October 1, 1991): K97—K100. http://dx.doi.org/10.1002/pssb.2221670242.

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22

Mandal, Swapan K., and Lutful Kabir. "Semiconductor–metal–semiconductor transition in Bi and Bi–Ag nanowires." Journal of Physics D: Applied Physics 47, no. 32 (July 18, 2014): 325302. http://dx.doi.org/10.1088/0022-3727/47/32/325302.

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23

Lin, Jia, Hong Chen, Yang Gao, Yao Cai, Jianbo Jin, Ahmed S. Etman, Joohoon Kang, et al. "Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite." Proceedings of the National Academy of Sciences 116, no. 47 (November 4, 2019): 23404–9. http://dx.doi.org/10.1073/pnas.1907576116.

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Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In+/In3+) inorganic halide perovskite with the composition of Cs2In(I)In(III)Cl6 in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Å, c = 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.

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24

Horigane, Kazumasa, and Jun Akimitsu. "Metal–semiconductor transition in novel layered oxychalcogenides." Science and Technology of Advanced Materials 7, no. 1 (January 2006): 6–8. http://dx.doi.org/10.1016/j.stam.2005.11.013.

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25

Nithiananthi, P., and K. Jayakumar. "Semiconductor–Metal transition in a quantum well." Physica B: Condensed Matter 391, no. 1 (March 2007): 113–17. http://dx.doi.org/10.1016/j.physb.2006.09.005.

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26

Hörmann, Nicolas G., Axel Gross, and Payam Kaghazchi. "Semiconductor–metal transition induced by nanoscale stabilization." Physical Chemistry Chemical Physics 17, no. 8 (2015): 5569–73. http://dx.doi.org/10.1039/c4cp05619a.

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27

Phillips, J. C. "Metal-semiconductor transition in partially compensated Ge:Sb." Physical Review B 43, no. 10 (April 1, 1991): 8679–81. http://dx.doi.org/10.1103/physrevb.43.8679.

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28

John Peter, A., and K. Navaneethakrishnan. "Semiconductor–metal transition in quantum well systems." Solid State Communications 122, no. 12 (June 2002): 655–59. http://dx.doi.org/10.1016/s0038-1098(02)00230-2.

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29

Yan, Weiwei, Ming Fang, Mao Liu, Shenghong Kang, Ruining Wang, Lide Zhang, and Ling Liu. "Semiconductor-metal transition of titanium sesquioxide nanopowder." Journal of Applied Physics 111, no. 12 (June 15, 2012): 123509. http://dx.doi.org/10.1063/1.4729801.

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30

Katulevskii, Yu A., A. G. Daminov, A. A. Muminov, and A. R. Faiziev. "Semiconductor-to-metal transition in pyrolyzed polyvinylchloride." Physica Status Solidi (a) 141, no. 1 (January 16, 1994): K33—K35. http://dx.doi.org/10.1002/pssa.2211410132.

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31

Kanazawa, I. "Metal–Insulator Transition in Diluted Magnetic Semiconductor." Journal of the Physical Society of Japan 72, Suppl.A (January 3, 2003): 211–12. http://dx.doi.org/10.1143/jpsjs.72sa.211.

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32

Wang, Yang, Rui Cheng, Jianjin Dong, Yuan Liu, Hailong Zhou, Woo Jong Yu, Ichiro Terasaki, Yu Huang, and Xiangfeng Duan. "Metal–semiconductor transition in atomically thin Bi2Sr2Co2O8nanosheets." APL Materials 2, no. 9 (September 2014): 092507. http://dx.doi.org/10.1063/1.4892975.

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33

Kellerman, D. G., V. R. Galakhov, A. S. Semenova, Ya N. Blinovskov, and O. N. Leonidova. "Semiconductor-metal transition in defect lithium cobaltite." Physics of the Solid State 48, no. 3 (March 2006): 548–56. http://dx.doi.org/10.1134/s106378340603022x.

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34

Boppart, H. "The semiconductor-metal transition in Tm-compounds." Journal of Magnetism and Magnetic Materials 47-48 (February 1985): 436–42. http://dx.doi.org/10.1016/0304-8853(85)90459-7.

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35

Shi, Fanian, Jian Meng, and Yufang Ren. "Semiconductor to metal transition in Ln2Mo3O9 compounds." Materials Research Bulletin 30, no. 10 (October 1995): 1285–91. http://dx.doi.org/10.1016/0025-5408(95)00127-1.

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36

Iguchi, Kazumoto. "Tight-Binding Model for DNA Double Chains: Metal–Insulator Transition Due to the Formation of a Double Strand of DNA." International Journal of Modern Physics B 11, no. 20 (August 10, 1997): 2405–23. http://dx.doi.org/10.1142/s0217979297001222.

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A tight-binding model is formulated for the calculation of the electronic structure of a double strand of deoxyribonucleic acid (DNA). The theory is applied to DNA with a particular structure such as the ladder and decorated ladder structures. It is found that there is a novel type of metal–insulator transitions due to the hopping anisotropy of the system. A metal-semimetal-semiconductor transition is found in the former and an effective semiconductor-metal transition at finite temperature in the latter, as the effect of base paring between two strands of DNA is increased. The latter mechanism may be responsible for explaining the Meade and Kayyem's recent observation.

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37

Guo, Yan-Dong, Hong-Bo Zhang, Hong-Li Zeng, Hai-Xia Da, Xiao-Hong Yan, Wen-Yue Liu, and Xin-Yi Mou. "A progressive metal–semiconductor transition in two-faced Janus monolayer transition-metal chalcogenides." Physical Chemistry Chemical Physics 20, no. 32 (2018): 21113–18. http://dx.doi.org/10.1039/c8cp02929f.

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38

VAJDA, P., and J. N. DAOU. "METAL-SEMICONDUCTOR TRANSITIONS IN THE SUPERSTOICHIOMETRIC DIHYDRIDES YH2+x." Modern Physics Letters B 06, no. 05 (February 28, 1992): 251–56. http://dx.doi.org/10.1142/s0217984992000338.

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After a brief review of the structural and electronic properties of the non-stoichiometric rare-earth hydrides, RH 2+x, we discuss metal-semiconductor transitions observed in several β-phase RH 2+x-systems in the temperature range 200 to 300 K for x-values close to the phase boundary to the trihydride γ-phase. The special case of YH 2+x is treated in detail, showing the evolution from a purely metallic case with x=0.085 to a clear M-S transition for x=0.10 (at the β-phase limit), passing through a fluctuating situation for x=0.095. The essential role played by an order — disorder transformation occurring in the octahedral (x) hydrogen sublattice as the driving mechanism for the M-S transition is emphasized. A second M-S transition observed at low temperatures (≲ 80 K ) is attributed to weak carrier localisation due to x-hydrogen disorder.

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39

Jin, Xilian, Xiao-Jia Chen, Tian Cui, Ho-kwang Mao, Huadi Zhang, Quan Zhuang, Kuo Bao, et al. "Crossover from metal to insulator in dense lithium-rich compound CLi4." Proceedings of the National Academy of Sciences 113, no. 9 (February 16, 2016): 2366–69. http://dx.doi.org/10.1073/pnas.1525412113.

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At room environment, all materials can be classified as insulators or metals or in-between semiconductors, by judging whether they are capable of conducting the flow of electrons. One can expect an insulator to convert into a metal and to remain in this state upon further compression, i.e., pressure-induced metallization. Some exceptions were reported recently in elementary metals such as all of the alkali metals and heavy alkaline earth metals (Ca, Sr, and Ba). Here we show that a compound of CLi4 becomes progressively less conductive and eventually insulating upon compression based on ab initio density-functional theory calculations. An unusual path with pressure is found for the phase transition from metal to semimetal, to semiconductor, and eventually to insulator. The Fermi surface filling parameter is used to describe such an antimetallization process.

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40

Krishnamoorthy, Aravind, Lindsay Bassman, Rajiv K. Kalia, Aiichiro Nakano, Fuyuki Shimojo, and Priya Vashishta. "Kinetics and Atomic Mechanisms of Structural Phase Transformations in Photoexcited Monolayer TMDCs." MRS Advances 3, no. 6-7 (2018): 345–50. http://dx.doi.org/10.1557/adv.2018.122.

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ABSTRACTRapid transitions between semiconducting and metallic phases of transition-metal dichalcogenides are of interest for 2D electronics applications. Theoretical investigations have been limited to using thermal energy, lattice strain and charge doping to induce the phase transition, but have not identified mechanisms for rapid phase transition. Here, we use density functional theory to show how optical excitation leads to the formation of a low-energy intermediate crystal structure along the semiconductor-metal phase transition pathway. This metastable crystal structure results in significantly reduced barriers for the semiconducting-metal phase transition pathway leading to rapid transition in optically excited crystals.

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41

Sklyarchuk, V., Yu Plevachuk, S. Mudry, and I. Shtablavyi. "Metal–nonmetal transition in semiconductor melts with 3d metal admixtures." Journal of Physical Studies 11, no. 2 (2007): 190–94. http://dx.doi.org/10.30970/jps.11.190.

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42

Chuang, Tzu-Hung, Kun-Ta Lu, Chun-I. Lu, Yao-Jane Hsu, and Der-Hsin Wei. "Hybridization regulated metal penetration at transition metal-organic semiconductor contacts." Applied Physics Letters 112, no. 8 (February 19, 2018): 081601. http://dx.doi.org/10.1063/1.5004760.

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43

Dobrowolski, W., M. Arciszewska, B. Brodowska, V. Domukhovski, V. K. Dugaev, A. Grzęda, I. Kuryliszyn-Kudelska, M. Wójcik, and E. I. Slynko. "IV-VI ferromagnetic semiconductors recent studies." Science of Sintering 38, no. 2 (2006): 109–16. http://dx.doi.org/10.2298/sos0602109d.

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In some IV-VI semimagnetic semiconductors, the RKKY interaction can dominate over the standard d-d superexchange and become the driving mechanism for ion-ion coupling. In effect, for low hole concentrations the Mn ion system is in a paramagnetic phase, whereas for higher ones it reveals typical ferromagnetic behavior. In this paper, recent work on IV-VI ferromagnetic (SnMnTe, PbSnMnTe and GeMnTe) systems will be presented. In particular, the influence of the presence of two types of magnetic ions (transition metal: Mn and rare earth metal: Eu or Er) incorporated into a semiconductor matrix on magnetic properties of resultant semimagnetic semiconductor will be described.

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44

Bickers, N. E., D. J. Scalapino, and R. T. Scalettar. "CDW AND SDW MEDIATED PAIRING INTERACTIONS." International Journal of Modern Physics B 01, no. 03n04 (August 1987): 687–95. http://dx.doi.org/10.1142/s0217979287001079.

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Pairing near CDW and SDW metal-semiconductor transitions is analyzed for a 2-D lattice within an RPA approximation. We find that s-wave pairing can occur near the CDW transition provided the on-site U is not too large, while d-wave pairing occurs near an SDW transition.

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45

Ren, Wanbin, Yonghao Han, Cailong Liu, Ningning Su, Yan Li, Boheng Ma, Yanzhang Ma, and Chunxiao Gao. "Pressure-induced semiconductor–metal phase transition in Mg2Si." Solid State Communications 152, no. 5 (March 2012): 440–42. http://dx.doi.org/10.1016/j.ssc.2011.11.043.

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46

Berezina, O. Ya, A. A. Velichko, L. A. Lugovskaya, A. L. Pergament, and G. B. Stefanovich. "Metal-semiconductor transition in nonstoichiometric vanadium dioxide films." Inorganic Materials 43, no. 5 (May 2007): 505–11. http://dx.doi.org/10.1134/s0020168507050123.

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47

Greenberg, Benjamin L., Zachary L. Robinson, Yilikal Ayino, Jacob T. Held, Timothy A. Peterson, K. Andre Mkhoyan, Vlad S. Pribiag, Eray S. Aydil, and Uwe R. Kortshagen. "Metal-insulator transition in a semiconductor nanocrystal network." Science Advances 5, no. 8 (August 2019): eaaw1462. http://dx.doi.org/10.1126/sciadv.aaw1462.

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Many envisioned applications of semiconductor nanocrystals (NCs), such as thermoelectric generators and transparent conductors, require metallic (nonactivated) charge transport across an NC network. Although encouraging signs of metallic or near-metallic transport have been reported, a thorough demonstration of nonzero conductivity, σ, in the 0 K limit has been elusive. Here, we examine the temperature dependence of σ of ZnO NC networks. Attaining both higher σ and lower temperature than in previous studies of ZnO NCs (T as low as 50 mK), we observe a clear transition from the variable-range hopping regime to the metallic regime. The critical point of the transition is distinctly marked by an unusual power law close to σ ∝ T1/5. We analyze the critical conductivity data within a quantum critical scaling framework and estimate the metal-insulator transition (MIT) criterion in terms of the free electron density, n, and interparticle contact radius, ρ.

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48

Gilev, S. D. "Semiconductor-metal transition in selenium under shock compression." Technical Physics 51, no. 7 (July 2006): 860–66. http://dx.doi.org/10.1134/s1063784206070073.

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49

Nistor, M., F. Gherendi, N. B. Mandache, C. Hebert, J. Perrière, and W. Seiler. "Metal-semiconductor transition in epitaxial ZnO thin films." Journal of Applied Physics 106, no. 10 (November 15, 2009): 103710. http://dx.doi.org/10.1063/1.3259412.

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50

Miyazaki, Takehide, and Toshihiko Kanayama. "Ultrathin Layered Semiconductor: Si-Rich Transition Metal Silicide." Japanese Journal of Applied Physics 46, No. 2 (January 9, 2007): L28—L30. http://dx.doi.org/10.1143/jjap.46.l28.

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