Books on the topic 'Semiconductor wafers. Silicon Silicon Electrodiffusion'

International Symposium on High Purity Silicon (9th 2006 Cancún, Mexico). High purity silicon 9. Edited by Claeys Cor L, Electrochemical Society. Electronics and Photonics Division., and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2006.

International, Symposium on High Purity Silicon (9th 2006 Cancún Mexico). High purity silicon 9. Pennington, NJ: Electrochemical Society, 2006.

L, Claeys Cor, Electrochemical Society Electronics Division, Society of Photo-optical Instrumentation Engineers., and Electrochemical Society Meeting, eds. High purity silicon VII. Pennington, NJ: Electrochemical Society, 2002.

Bullis, W. Murray. Evolution of silicon materials characterization: Lessons learned for improved manufacturing. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1993.

International Symposium on High Purity Silicon (8th 2004 Honolulu, Hawaii). High purity silicon VIII: Proceedings of the international symposium. Edited by Claeys Cor L, Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2004.

L, Claeys Cor, Electrochemical Society Electronics Division, Electrochemical Society Meeting, and Society of Photo-optical Instrumentation Engineers., eds. High purity silicon VI: Proceedings of the Sixth International Symposium. Pennington, New Jersey: Electrochemical Society, 2000.

International Symposium on High Purity Silicon (4th 1996 San Antonio, Tex.). Proceedings of the Fourth International Symposium on High Purity Silicon. Edited by Claeys Cor L and Electrochemical Society Electronics Division. Pennington, NJ: Electrochemical Society, 1996.

Symposium F on Techniques and Challenges for 300 mm Silicon (1998 Strasbourg, France). Techniques and challenges for 300 mm silicon: Processing, characterization, modelling and equipment : proceedings of Symposium F on Techniques and Challenges for 300 mm Silicon of the E-MRS 1998 Spring Conference, Strasbourg, France, 16-19 June 1998. Amsterdam: Elsevier, 1999.

IEEE SOS/SOI Technology Conference. (1988 St. Simons Island, Ga.). 1988 IEEE SOS/SOI Technology Workshop, October 3-5, 1988, Sea Palms Resort, St. Simons Island, Georgia, proceedings. [United States: s.n., 1988.

Bullis, W. Murray. Semiconductor measurement technology: Evolution of silicon materials characterization : lessons learned for improved manufacturing. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1993.

L, Claeys Cor, and Electrochemical Society Electronics Division, eds. Proceedings of the Fifth International Symposium on High Purity Silicon. Pennington, NJ: Electrochemical Society, 1998.

The invention of the silicon chip: A revolution in daily life. Chicago, Ill: Heinemann Library, 2002.

International Symposium on Ultra Clean Processing of Silicon Surfaces (3rd 1996 Antwerp, Belgium). Proceedings of the Third International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '96). Edited by Heyns Marc, Meuris Marc, and Mertens Paul. Leuven: Acco, 1996.

IEEE SOS/SOI Technology Conference. (1990 Key West, Fla.). 1990 IEEE SOS/SOI Technology Conference, October 2-4, 1990, Marriott's Casa, Marina Resort, Key West, Florida : proceedings. [New York: IEEE], 1990.

Shaughnessy, Derrick. Photocarrier radiometric characterization of semiconductor silicon wafers. 2005.

1945-, Hattori Takeshi, ed. Ultraclean surface processing of silicon wafers: Secrets of VLSI manufacturing. Berlin: Springer, 1998.

Ultraclean Surface Processing of Silicon Wafers: Secrects of VLSI Manufacturing. Springer, 1998.

Ultra Clean Processing of Silicon Surfaces (Solid State Phenomena). Scitec Pubns, 2005.

(Editor), H. Richter, P. Wagner (Editor), and G. Ritter (Editor), eds. Techniques and Challenges for 300 mm Silicon: Processing, Characterization, Modelling and Equipment (European Materials Research Society Symposia Proceedings). Elsevier Science, 1999.

Techniques and Challenges for 300 mm Silicon: Processing, Characterization, Modelling and Equipment (European Materials Research Society Symposia Proceedings). Elsevier Science, 1999.

National Institute of Standards and Technology (U.S.). Semiconductor Electronics Division., ed. Semiconductor measurement technology: Evolution of silicon materials characterization : lessons learned for improved manufacturing. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1993.

(Editor), C. L. Claeys, P. Rai-Choudhury (Editor), M. Watanabe (Editor), P. Stalhofer (Editor), and H. J. Dawson (Editor), eds. High Purity Silicon V. (Proceeding Series Volume 98-13). Electrochemical Society, 1999.

S, Iyer Subramanian, Auberton-Hervé Andre J, Institution of Electrical Engineers, and INSPEC (Information service). EMIS Group, eds. Silicon wafer bonding technology: For VLSI and MEMS applications. London: Institution of Electrical Engineers, 2002.

Chorlton, Windsor. The Invention of the Silicon Chip: A Revolution in Daily Life (Point of Impact). Heinemann, 2002.

Chorlton, Windsor. The Invention of the Silicon Chip: A Revolution in Daily Life (Point of Impact). Heinemann, 2002.

Keller, Christopher G. Microfabricated high aspect ratio silicon flexures: HEXSIL, RIE, and KOH etched design and fabrication. MEMS Precision Instruments, 1998.

(Editor), Subramanian S. Iyer, and Andre J. Auberton-Herve (Editor), eds. Silicon Wafer Bonding Technology for Vlsi and Mems Applications (Emis Processing Series, 1). INSPEC, Inc., 2002.

Innovative Fertigungsverfahren für neue Produkte auf der Basis dünner Silizium-Bauelemente: Ergebnisbericht des BMBF Verbundprojektes "InnoSi". Stuttgart: Fraunhofer IRB, 2004.

Crystal Growth and Evaluation of Silicon for VLSI and ULSI. CRC Press, 2014.

C, Gupta D., Brown George A. 1937-, and Conference on Gate Dielectric Integrity (1999 : San Jose, Calif.), eds. Gate dielectric integrity: Material, process, and tool qualification. West Conshocken, Pa: ASTM, 2000.

(Editor), Dinesh C. Gupta, and George Albert Brown (Editor), eds. Gate Dielectric Integrity: Material, Process, and Tool Qualification (Astm Special Technical Publication// Stp) (Astm Special Technical Publication// Stp). ASTM International, 2000.