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Relevant bibliographies by topics / Semiconductor wafers. Silicon Silicon Electrodiffusion / Dissertations / Theses

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Dissertations / Theses on the topic 'Semiconductor wafers. Silicon Silicon Electrodiffusion'

Author: Grafiati

Published: 4 June 2021

Last updated: 10 February 2022

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1

Gibbons, Brian J. "Electromigration induced step instabilities on silicon surfaces." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1143235175.

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2

Wang, Hongyun. "Advanced processing methods for microelectronics industry silicon wafer handling components /." Full text (PDF) from UMI/Dissertation Abstracts International, 1999. http://wwwlib.umi.com/cr/utexas/fullcit?p3004411.

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3

Garcia, Victoria. "Effect of dislocation density on residual stress in polycrystalline silicon wafers." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22621.

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4

Brun, Xavier F. "Analysis of handling stresses and breakage of thin crystalline silicon wafers." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26538.

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Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Melkote, Shreyes; Committee Member: Danyluk, Steven; Committee Member: Griffin, Paul; Committee Member: Johnson, Steven; Committee Member: Kalejs, Juris; Committee Member: Sitaraman, Suresh. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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5

Lopez, Parra Marcelo. "The design, manufacture and testing of a low-cost cleanroom robot for handling silicon wafers." Thesis, Cranfield University, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260098.

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6

Vedantham, Vikram. "In-situ temperature and thickness characterization for silicon wafers undergoing thermal annealing." Thesis, Texas A&M University, 2003. http://hdl.handle.net/1969.1/1181.

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Nano scale processing of IC chips has become the prime production technique as the microelectronic industry aims towards scaling down product dimensions while increasing accuracy and performance. Accurate control of temperature and a good monitoring mechanism for thickness of the deposition layers during epitaxial growth are critical parameters influencing a good yield. The two-fold objective of this thesis is to establish the feasibility of an alternative to the current pyrometric and ellipsometric techniques to simultaneously measure temperature and thickness during wafer processing. TAP-NDE is a non-contact, non-invasive, laser-based ultrasound technique that is employed in this study to contemporarily profile the thermal and spatial characteristics of the wafer. The Gabor wavelet transform allows the wave dispersion to be unraveled and the group velocity of individual frequency components to be extracted from the experimentally acquired time waveform. The thesis illustrates the formulation of a theoretical model that is used to identify the frequencies sensitive to temperature and thickness changes. The group velocity of the corresponding frequency components is determined and their corresponding changes with respect to temperature for different thickness are analytically modeled. TAP-NDE is then used to perform an experimental analysis on Silicon wafers of different thickness to determine the maximum possible resolution of TAP-NDE towards temperature sensitivity, and to demonstrate the ability to differentiate between wafers of different deposition layer thickness at temperatures up to 600?C. Temperature resolution is demonstrated for ?10?C resolution and for ?5?C resolution; while thickness differentiation is carried out with wafers carrying 4000? and 8000? of aluminum deposition layer. The experimental group velocities of a set of selected frequency components extracted using the Gabor Wavelet time-frequency analysis as compared to their corresponding theoretical group velocities show satisfactory agreement. As a result of this work, it is seen that TAP-NDE is a suitable tool to identify and characterize thickness and temperature changes simultaneously during thermal annealing that can replace the current need for separate characterization of these two important parameters in semiconductor manufacturing.

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7

Syed, Ahmed Rashid. "Non-invasive thermal profiling of silicon wafer surface during RTP using acoustic and signal processing techniques /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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8

Chien, Hsu-Yueh. "Investigation of Copper Out-Plating Mechanism on Silicon Wafer Surface." Thesis, University of North Texas, 1995. https://digital.library.unt.edu/ark:/67531/metadc278367/.

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As the miniaturization keeps decreasing in semiconductor device fabrication, metal contamination on silicon surfaces becomes critical. An investigation of the fundamental mechanism of metal contamination process on silicon surface is therefore important. Kinetics and thermodynamics of the copper out-plating process on silicon surfaces in diluted HF solutions are both evaluated by several analytical methods.

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9

Dukic, Megan Marie. "Vibrating Kelvin Probe Measurements of a Silicon Surface with the Underside Exposed to Light." Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/19862.

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This thesis addresses the use of a vibrating Kelvin probe to monitor the change in the front surface potential of a silicon wafer while the rear surface is illuminated with monochromatic, visible light. Two tests were run to verify the change in surface potential. One test increased the intensity of the light and the other increased the wavelength while recording the front surface potential. The change in the surface potential for a range of intensities of incident light was recorded and analyzed. The results show that the change in surface potential increased with increasing intensity. For each wafer, the smallest change in surface potential occurred at the lowest intensity, 3.77 mW. In the same respect, the largest change in surface potential occurred at the highest intensity, 17.8 mW. For all wafers, the change in surface potential ranged from approximately 8 mV at 3.77 mW to approximately 80 mV at 17.8 mW. The change in the surface potential for a range of wavelengths of incident light was also recorded and analyzed. The results showed that the change in surface potential formed a skewed bell curve with increasing wavelength of incident light. For each wafer, the largest change in surface potential occurred at mid-range wavelengths, between 600 nm and 700 nm. The smallest change in surface potential occurred at 450 nm, the shortest wavelength, and 800 nm, the longest wavelength. For all wafers, the change in surface potential ranged from approximately 8 mV at 800 nm to approximately 165 mV at 700 nm. A model based on excess electron diffusion within the silicon wafer was used to predict material properties. After curve fitting the model with experimental results, an excess electron lifetime of ôN = 17 µs and surface recombination rates of sFRONT = sREAR = 18,000cm/s were predicted. These values suggest poor silicon wafer quality relative to commercial silicon devices. Regardless of the quality, the results show that the front surface potential of a silicon wafer is affected by incident light on the rear surface. The quantitative effect of the light is dependent on the properties of the light and the material properties of the silicon wafer.

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10

Yoder, Karl J. "Influence of design and coatings on the mechanical reliability of semiconductor wafers." Thesis, University of North Texas, 2002. https://digital.library.unt.edu/ark:/67531/metadc3190/.

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We investigate some of the mechanical design factors of wafers and the effect on strength. Thin, solid, pre-stressed films are proposed as a means to improve the bulk mechanical properties of a wafer. Three-point bending was used to evaluate the laser scribe density and chemical processing effect on wafer strength. Drop and strike tests were employed to investigate the edge bevel profile effect on the mechanical properties of the wafer. To characterize the effect of thin films on strength, one-micron ceramic films were deposited on wafers using PECVD. Coated samples were prepared by cleaving and were tested using four-point bending. Film adhesion was characterized by notched four-point bending. RBS and FTIR were used to obtain film chemistry, and nanoindentation was used to investigate thin film mechanical properties. A stress measurement gauge characterized residual film stress. Mechanical properties of the wafers correlated to the residual stress in the film.

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11

Hall, Lindsey H. (Lindsey Harrison). "A Materials Approach to Silicon Wafer Level Contamination Issues from the Wet Clean Process." Thesis, University of North Texas, 1996. https://digital.library.unt.edu/ark:/67531/metadc278380/.

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Semiconductor devices are built using hyperpure silicon and very controlled levels of doping to create desired electrical properties. Contamination can alter these precisely controlled electrical properties that can render the device non-functional or unreliable. It is desirable to determine what impurities impact the device and control them. This study consists of four parts: a) determination of acceptable SCI (Standard Clean 1) bath contamination levels using VPD-DSE-GFAAS (Vapor Phase Decomposition Droplet Surface Etching Graphite Furnace Atomic Absorption Spectroscopy), b) copper deposition from various aqueous HF solutions, c) anion contamination from fluoropolymers used in chemical handling and d) metallic contamination from fluoropolymers and polyethylene used in chemical handling. A technique was developed for the determination of metals on a silicon wafer source at low levels. These levels were then correlated to contamination levels in a SCI bath. This correlation permits the determination of maximum permissible solution contaminant levels. Copper contamination is a concern for depositing on the wafer surface from hydrofluoric acid solutions. The relationship between copper concentration on the wafer surface and hydrofluoric acid concentration was determined. An inverse relationship exists and was explained by differences in diffusion rates between the differing copper species existing in aqueous hydrofluoric acid solutions. Finally, sources of contamination from materials used in chemical handling was studied. The predominant anion contamination from fluoropolymers was found to be fluorides. Metallic contamination from fluoropolymers and polyethylene was also studied. The primary metal contamination comes from the actual fabrication of the polymer and not from the polymer resin.

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12

Vandersand, James Dennis. "Growth of 6H-SiC homoepitaxy on substrates off-cut between the [01-10] planes." Master's thesis, Mississippi State : Mississippi State University, 2002. http://library.msstate.edu/etd/show.asp?etd=etd-11072002-095154.

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13

Ředina, Dalibor. "Sestavení a testování zařízení pro výrobu ozonované vody a její aplikace na čištění křemíkových desek." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2017. http://www.nusl.cz/ntk/nusl-319932.

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Deionised-ozonated water, so-called DIO3 appears to be an ideal alternative for usage in semiconductor industry. The utilisation of DIO3 for removal of photoresist from silicon wafers is faster, cheaper, and more environmental-friendly compared to classical technology based on mixture of sulphuric acid with hydrogen peroxide, so-called SPM. The diploma thesis deals firstly with research into ozone and ozonated water and their possible applications. Next sections describe two prototypes of generators for DIO3, that were assembled in CSVG a.s. Testing of parameters for generators on dissolved-ozone concentration is also a part of this thesis. Moreover, thesis involves tests, that were carrier out in ON Semiconductor in Rožnov pod Radhoštěm. These tests compare efficiency of cleaning by classical technology based on SPM and DIO3 approach.

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14

Shaughnessy, Derrick. "Photocarrier radiometric characterization of semiconductor silicon wafers." 2005. http://link.library.utoronto.ca/eir/EIRdetail.cfm?Resources__ID=371003&T=F.

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15

Watts, Paul E. "Electrochemical etch characteristics of (100) silicon in tetramethyl ammonium hydroxide." Thesis, 2002. http://hdl.handle.net/1957/30888.

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A study of potentiostatic and galvanostatic electrochemical etching of silicon in tetramethylammonium hydroxide (TMAH) has been carried out. In TMAH baths,, we find that biased (100) silicon etch rates increase 21% over OCP etch rates. For TMAH baths seasoned with silicon, biased silicon etch rates increase to 63% over those at OCP. Electrochemical etching eliminates the growth of hillocks on etching surfaces regardless of etchant pH, [TMAH] or silicon loading, resulting in highly smooth etching surfaces. Potentiostatic and galvanic etching yield similar etch rates and surface consistency.
Graduation date: 2003

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16

Pun, Arthur Fong-Yuen Zheng Jim P. "A novel in-situ method for inhibiting surface roughening during the thermal oxide desorption etching of silicon and gallium arsenide." Diss., 2005. http://etd.lib.fsu.edu/theses/available/etd-03252005-171546.

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Thesis (Ph. D.)--Florida State University, 2005.
Advisor: Dr. Jim P. Zheng, Florida State University, College of Engineering, Dept. of Electrical and Computer Engineering. Title and description from dissertation home page (viewed Sept. 15, 2005). Document formatted into pages; contains xii, 96 pages. Includes bibliographical references.

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17

George, Mark A. "A process for the removal of Cu and Fe from the surface of silicon substrates based on heterogeneous gas-solid chelation chemistry /." Diss., 1996. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:9704986.

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18

Yang, Po-Fei, and 楊博斐. "An Analysis of Synergy Generated from Merger and Acquisition of Semiconductor Silicon Wafer Industry: The Case of Global Wafers Co., Ltd." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6wy296.

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碩士
國立交通大學
管理學院高階主管管理碩士學程
105
Mergers and acquisitions (M & A) is a quite efficient way for enterprises to quickly acquire new technologies or to expand capacity and turnover, and evenly enter a brand new industries. Even if the successe rate in M & A, based on general literatures, is only about 30% , In addition to transformation, accessing new technologies and increasing market share or revenue, enterprises will continue to use M & A to achieve its strategic objectives because it is a shortcut for the growth of coperate. M&A become more and more prosperous in Taiwan in recent years, for example, Foxconn Technology Group, MediaTek Inc., WPG Holdings, Fair Friend Group, Epistar, Sino-American Silicon Products Inc. and GlobalWafers, they all are veterans of M&A. After the completion of M & A, enterprises usually make use of the evaluation of M&A synergy to examine how much corporate value will be increased after M&A. Literatures referred to the M & A synergy can be divided into three parts, operation synergy, market synergy and financial synergy. In recent years, literatures began to discuss the technical synergy. This study focused on how GlobalWafers in semiconductor silicon wafer industry assess its M & A synergies through a series of M &A. We hope the study can be used as a reference for other company who like evaluate the synergy of M & A.

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19

Qu, Yan. "Silicon wafer surface temperature measurement using light-pipe radiation thermometers in rapid thermal processing systems." Thesis, 2006. http://hdl.handle.net/2152/2794.

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