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Journal articles on the topic 'Semiconductor X-ray and gamma-ray detectors'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Sareen, Rob. "Semiconductor X-Ray Detectors." Microscopy Today 6, no. 6 (1998): 8–12. http://dx.doi.org/10.1017/s1551929500068152.

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Detection of characteristic x-rays is a fascinating and challenging subject. From its early beginnings with gas proportional counters it has evolved, like many branches of technology, into the use of a variety of semiconductors.The lithium compensated silicon detector [Si(Li)] has been the predominant measuring tool over the last two decades, in the last five years, increasing numbers of high purity germanium detectors (HPG) have appeared and more recently a plethora of new materials and concepts are seeing a successful introduction. Among these newer materials are compound semiconductors like

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2

Hansen, P. G. "Gamma- and X-ray spectrometry with semiconductor detectors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 44, no. 2 (1989): 246–47. http://dx.doi.org/10.1016/0168-583x(89)90436-9.

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3

Lund, Mark W. "More than One Ever Wanted to Know about X-Ray Detectors Part VI: Alternate Semiconductors for Detectors." Microscopy Today 3, no. 5 (1995): 12–13. http://dx.doi.org/10.1017/s1551929500066116.

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X-ray spectrometers give the capability to determine chemical element composition in electron microscopes. The semiconductor with the most experience as an x-ray detector is silicon. Silicon is the most highly developed material on earth, and has a lot of good things going for it, but for some applications we crave something with other good properties. For example, for room temperature detectors it would be best to have a semiconductor with a wider band gap. For higher resolution it would be better to have a semiconductor with a smaller band gap. For these reasons a number of other semiconduct

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4

Abbene, L., G. Gerardi, and F. Principato. "Real time digital pulse processing for X-ray and gamma ray semiconductor detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 730 (December 2013): 124–28. http://dx.doi.org/10.1016/j.nima.2013.04.053.

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5

Luke, P. N., M. Amman, C. Tindall, and J. S. Lee. "Recent developments in semiconductor gamma-ray detectors." Journal of Radioanalytical and Nuclear Chemistry 264, no. 1 (2005): 145–53. http://dx.doi.org/10.1007/s10967-005-0687-8.

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6

Kohagura, J., T. Cho, M. Hirata, et al. "New methods for semiconductor charge-diffusion-length measurements using synchrotron radiation." Journal of Synchrotron Radiation 5, no. 3 (1998): 874–76. http://dx.doi.org/10.1107/s0909049597017524.

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The extension of a new theory on the X-ray energy response of semiconductor detectors is carried out to characterize the X-ray response of a multichannel semiconductor detector fabricated on one silicon wafer. Recently, these multichannel detectors have been widely utilized for position-sensitive observations in various research fields, including synchrotron radiation research and fusion-plasma investigations. This article represents the verification of the physics essentials of a proposed theory on the X-ray response of semiconductor detectors. The three-dimensional charge-diffusion effects o

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7

Fiorini, C., and A. Longoni. "Semiconductor drift detectors for X- and gamma-ray spectroscopy and imaging." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 266, no. 10 (2008): 2173–81. http://dx.doi.org/10.1016/j.nimb.2008.02.059.

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8

Eskin, J. D., H. H. Barrett, and H. B. Barber. "Signals induced in semiconductor gamma-ray imaging detectors." Journal of Applied Physics 85, no. 2 (1999): 647–59. http://dx.doi.org/10.1063/1.369198.

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9

Pennicard, David, Benoît Pirard, Oleg Tolbanov, and Krzysztof Iniewski. "Semiconductor materials for x-ray detectors." MRS Bulletin 42, no. 06 (2017): 445–50. http://dx.doi.org/10.1557/mrs.2017.95.

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10

Olschner, F., K. S. Shah, J. C. Lund та ін. "Thallium bromide semiconductor X-ray and γ-ray detectors". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 322, № 3 (1992): 504–8. http://dx.doi.org/10.1016/0168-9002(92)91222-u.

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11

Cho, T., M. Hirata, J. Kohagura, et al. "Characterization and interpretation of the quantum efficiencies of multilayer semiconductor detectors using a new theory." Journal of Synchrotron Radiation 5, no. 3 (1998): 877–79. http://dx.doi.org/10.1107/s0909049598000016.

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On the basis of a new theory of semiconductor X-ray detector response, a new type of multilayer semiconductor detector was designed and developed for convenient energy analyses of intense incident X-ray flux in a cumulative-current mode. Another anticipated useful property of the developed detector is a drastic improvement in high-energy X-ray response ranging over several hundred eV. The formula for the quantum efficiency of multilayer semiconductor detectors and its physical interpretations are proposed and have been successfully verified by synchrotron radiation experiments at the Photon Fa

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12

Barrett, H. H., J. D. Eskin, and H. B. Barber. "Charge Transport in Arrays of Semiconductor Gamma-Ray Detectors." Physical Review Letters 75, no. 1 (1995): 156–59. http://dx.doi.org/10.1103/physrevlett.75.156.

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13

Mitchell, Dean J., Howard M. Sanger, and Keith W. Marlow. "Gamma-ray response functions for scintillation and semiconductor detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 276, no. 3 (1989): 547–56. http://dx.doi.org/10.1016/0168-9002(89)90582-2.

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14

Krneta Nikolić, Jelena, Milica Rajačić, Dragana Todorović, et al. "Semiempirical Efficiency Calibration in Semiconductor HPGe Gamma-Ray Spectroscopy." Journal of Spectroscopy 2018 (2018): 1–8. http://dx.doi.org/10.1155/2018/5392658.

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One of the main problems in quantitative gamma-ray spectroscopy is the determination of detection efficiency, for different energies, source-detector geometries, and composition of samples or sources. There are, in principle, three approaches to this issue: experimental, numerical, and semiempirical. Semiempirical approach is based on the calculation of the efficiency for the measured sample on the basis of an experimental efficiency measured on the same detector, but with a calibration source that can be of different size, geometry, density, or composition—the so-called efficiency transfer. T

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15

Ponpon, J. P. "Semiconductor detectors for 2D X-ray imaging." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 551, no. 1 (2005): 15–26. http://dx.doi.org/10.1016/j.nima.2005.07.038.

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16

Choi, Chi Won, Ji Koon Park, Sang Sik Kang, et al. "Comparison of Semiconductor Radiation Detectors for Large Area X-Ray Imaging." Solid State Phenomena 124-126 (June 2007): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.123.

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We have developed a large area, flat panel detector for general applications to digital radiology. This paper presents the x-ray detection characteristics with various semiconductor radiation detectors (HgI2, PbI2, PbO, CdTe) derived by a novel wet coating process for large area deposition. The wet coating process could easily be made from large area films with printing paste mixed with semiconductor and binder material at room temperature. X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The HgI2 semiconductor was shown in much lower dar

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17

Chaudhuri, Sandeep K., Joshua W. Kleppinger, OmerFaruk Karadavut, Ritwik Nag, and Krishna C. Mandal. "Quaternary Semiconductor Cd1−xZnxTe1−ySey for High-Resolution, Room-Temperature Gamma-Ray Detection." Crystals 11, no. 7 (2021): 827. http://dx.doi.org/10.3390/cryst11070827.

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The application of Cd0.9Zn0.1Te (CZT) single crystals, the primary choice for high-resolution, room-temperature compact gamma-ray detectors in the field of medical imaging and homeland security for the past three decades, is limited by the high cost of production and maintenance due to low detector grade crystal growth yield. The recent advent of its quaternary successor, Cd0.9Zn0.1Te1−ySey (CZTS), has exhibited remarkable crystal growth yield above 90% compared to that of ~33% for CZT. The inclusion of Se in appropriate stoichiometry in the CZT matrix is responsible for reducing the concentra

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18

Manolopoulos, S., R. Bates, G. Bushnell-Wye, et al. "X-ray powder diffraction with hybrid semiconductor pixel detectors." Journal of Synchrotron Radiation 6, no. 2 (1999): 112–15. http://dx.doi.org/10.1107/s0909049599001107.

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Semiconductor hybrid pixel detectors, originally developed for particle physics experiments, have been used for an X-ray diffraction experiment on a synchrotron radiation source. The spatial resolution of the intensity peaks in the diffraction patterns of silicon and potassium niobate powder samples was found to be better than that of a scintillator-based system, typically used at present. The two-dimensional position information of the pixel detector enabled multi-peak diffraction patterns to be acquired and clearly resolved without the need for an angle scan with a diffractometer. This trial

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19

Cernik, R. J., K. H. Khor, and C. Hansson. "X-ray colour imaging." Journal of The Royal Society Interface 5, no. 21 (2007): 477–81. http://dx.doi.org/10.1098/rsif.2007.1249.

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A prototype X-ray colour imaging system has been assembled using the principle of tomographic energy-dispersive diffraction imaging (TEDDI). The new system has been tested using samples of nylon-6, aluminium powder and deer antler bone. Non-destructive three-dimensional images of the test objects have been reconstructed on a 300 μm scale with an associated diffraction pattern at each voxel. In addition, the lattice parameters of the polycrystalline material present in the sampled voxels have been determined using full pattern refinement methods. The use of multiple diffracted parallel colour X

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20

Zaletin, V. M., and V. P. Varvaritsa. "Wide-bandgap compound semiconductors for X- or gamma-ray detectors." Russian Microelectronics 40, no. 8 (2011): 543–52. http://dx.doi.org/10.1134/s1063739711080208.

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21

Chatani, Hiroshi. "Measurement of gamma-ray intensities of 231Th using semiconductor detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 425, no. 1-2 (1999): 277–90. http://dx.doi.org/10.1016/s0168-9002(98)01410-7.

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22

Barber, H. B., B. A. Apotovsky, F. L. Augustine, et al. "Semiconductor pixel detectors for gamma-ray imaging in nuclear medicine." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 395, no. 3 (1997): 421–28. http://dx.doi.org/10.1016/s0168-9002(97)00615-3.

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23

Olschner, F., J. C. Lund, and I. Stern. "Monte Carlo simulation of gamma ray spectra from semiconductor detectors." IEEE Transactions on Nuclear Science 36, no. 1 (1989): 1176–79. http://dx.doi.org/10.1109/23.34627.

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24

Bertuccio, Giuseppe, S. Caccia, Filippo Nava, et al. "Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors." Materials Science Forum 615-617 (March 2009): 845–48. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.845.

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The design and the experimental results of some prototypes of SiC X-ray detectors are presented. The devices have been manufactured on a 2’’ 4H-SiC wafer with 115 m thick undoped high purity epitaxial layer, which constitutes the detection’s active volume. Pad and pixel detectors based on Ni-Schottky junctions have been tested. The residual doping of the epi-layer was found to be extremely low, 3.7 x 1013 cm-3, allowing to achieve the highest detection efficiency and the lower specific capacitance of the detectors. At +22°C and in operating bias condition, the reverse current densities of the

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25

Kim, Jinwoo, Jesse Tanguay, Ian A. Cunningham, and Ho Kyung Kim. "X-ray interaction characteristic functions in semiconductor detectors." Journal of Instrumentation 15, no. 03 (2020): C03029. http://dx.doi.org/10.1088/1748-0221/15/03/c03029.

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26

Szeles, Csaba, Stephen A. Soldner, Steve Vydrin, Jesse Graves, and Derek S. Bale. "CdZnTe Semiconductor Detectors for Spectroscopic X-ray Imaging." IEEE Transactions on Nuclear Science 55, no. 1 (2008): 572–82. http://dx.doi.org/10.1109/tns.2007.914034.

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27

Freitas, M. B., F. H. M. Medeiros, and Elisabeth M. Yoshimura. "Detection Properties of CdZnTe Semiconductor for Diagnostic X-Ray Spectroscopic Applications." Materials Science Forum 480-481 (March 2005): 53–58. http://dx.doi.org/10.4028/www.scientific.net/msf.480-481.53.

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Currently, many semiconductor compounds, particularly Cd1-xZnxTe, have attracted attention for applications in detection of radiation, due to the very good resolution without cryogenic cooling (a 1.3 keV-FWHM at the 122 keV line from 57Co is reported for some detectors). In this study the properties of a zinc doped cadmium telluride detector mounted on a thermoelectric cooler (Amptek Inc., model XR-100T-CZT) were studied. The detection system is based on a Cd0.9Zn0.1Te crystal of 3x3x2 mm, which operates at approximately -21°C and uses a rise time discrimination (RTD) circuit to improve the en

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28

Höhne, Jens, Matthias Bühler, Theo Hertrich, and Uwe Hess. "Cryodetectors for High Resolution X-Ray Spectroscopy." Microscopy and Microanalysis 6, S2 (2000): 740–41. http://dx.doi.org/10.1017/s1431927600036199.

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Based on excellent energy resolution and single quantum detection sensitivity, cryodetectors are offering a variety of new, analytical solutions for the analysis of elementary surface compositions, especially for the analysis of light elements and very small sized structures. Cryodetectors operate typically at temperatures between 30 and 200mK and require vibration free and fully automated cooling systems in order to qualify for industrial applications. Cryodetectors are low temperature superconductors where the two most prominent types are based on microcalorimeter and tunnel diode principles

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29

Frank, M., C. A. Mears, S. E. Labov, et al. "Cryogenic high-resolution X-ray spectrometers for SR-XRF and microanalysis." Journal of Synchrotron Radiation 5, no. 3 (1998): 515–17. http://dx.doi.org/10.1107/s0909049597014465.

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Experimental results are presented obtained with a cryogenically cooled high-resolution X-ray spectrometer based on a 141 × 141 µm Nb-Al-Al2O3-Al-Nb superconducting tunnel junction (STJ) detector in an SR-XRF demonstration experiment. STJ detectors can operate at count rates approaching those of semiconductor detectors while still providing a significantly better energy resolution for soft X-rays. By measuring fluorescence X-rays from samples containing transition metals and low-Z elements, an FWHM energy resolution of 6–15 eV for X-rays in the energy range 180–1100 eV has been obtained. The r

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30

Korun, M., and R. Martinčič. "Determination of efficiencies of semiconductor gamma-ray detectors for inhomogeneous samples." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 335, no. 1-2 (1993): 148–55. http://dx.doi.org/10.1016/0168-9002(93)90267-l.

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31

Konstantinov, A. A., N. V. Kurenkov, A. B. Malinin, T. E. Sazonova, and S. V. Sepman. "Use of166mHo for calibration of gamma-ray spectrometers with semiconductor detectors." Soviet Atomic Energy 67, no. 3 (1989): 696–98. http://dx.doi.org/10.1007/bf01123213.

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32

Lutz, Gerhard. "Novel semiconductor detectors for X-ray astronomy and spectroscopy." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 501, no. 1 (2003): 288–97. http://dx.doi.org/10.1016/s0168-9002(02)02048-x.

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33

Bavdaz, M., A. Peacock, and A. Owens. "Future space applications of compound semiconductor X-ray detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 458, no. 1-2 (2001): 123–31. http://dx.doi.org/10.1016/s0168-9002(00)01033-0.

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34

Lépy, M. C., J. L. Campbell, J. M. Laborie, J. Plagnard, P. Stemmler, and W. J. Teesdale. "Experimental characterization of low-energy X-ray semiconductor detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 422, no. 1-3 (1999): 428–32. http://dx.doi.org/10.1016/s0168-9002(98)01111-5.

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35

Sokolov, A., A. Loupilov, and V. Gostilo. "Semiconductor Peltier-cooled detectors for x-ray fluorescence analysis." X-Ray Spectrometry 33, no. 6 (2004): 462–65. http://dx.doi.org/10.1002/xrs.744.

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36

Krumrey, M., E. Tegeler, R. Thornagel, and G. Ulm. "Calibration of semiconductor photodiodes as soft x‐ray detectors." Review of Scientific Instruments 60, no. 7 (1989): 2291–94. http://dx.doi.org/10.1063/1.1140796.

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37

Castoldi, A., and M. Sampietro. "Semiconductor drift detectors for high resolution X-ray spectroscopy." Sensors and Actuators A: Physical 31, no. 1-3 (1992): 245–49. http://dx.doi.org/10.1016/0924-4247(92)80112-g.

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38

Garratt-Reed, Anthony J. "EDXS in the electron microscope: The hardware." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 374–75. http://dx.doi.org/10.1017/s0424820100169602.

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The hardware employed for microanalysis by energy-dispersive x-ray analysis in the electron microscope consists, logically enough, of two principal parts, i.e. the electron microscope and the x-ray detector/analyzer combination. There are a number of excellent sources which discuss in depth how these work and interact to allow an analysis to be performed, and how to obtain the best possible results.The basic principle of operation of an energy-dispersive x-ray detector is as follows: a small piece of single-crystal intrinsic semiconductor (typically silicon doped with lithium for compensation,

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39

Wang, S. G., P. J. Sellin, Q. Zhang, Fan Xiu Lu, Wei Zhong Tang, and A. Lohstroh. "The Fabrication and Performance of CVD Diamond-Based X-Ray Detectors." Materials Science Forum 475-479 (January 2005): 3605–10. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3605.

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In this study, X-ray detectors with coplanar metal-semiconductor-metal structure, were fabricated employing high quality chemical vapour deposited (CVD) diamond film grown by a direct current arc jet plasma system. In which the electrical contacts with dimension of 25 µm in width with a 25 µm inter-electrode spacing, were patterned on the growth side of the diamond film using lift-off technology. The performance of the fabricated detectors was evaluated by steady-state X-ray illumination. The photoconductivity of the diamond detectors was found to linearly increase with increase in the X-ray p

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40

Egarievwe, Stephen U., Utpal N. Roy, Carmella A. Goree, Benicia A. Harrison, Jeanette Jones, and Ralph B. James. "Ammonium Fluoride Passivation of CdZnTeSe Sensors for Applications in Nuclear Detection and Medical Imaging." Sensors 19, no. 15 (2019): 3271. http://dx.doi.org/10.3390/s19153271.

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Cadmium zinc telluride selenide (Cd1−xZnxTe1−ySey or CZTS) is one of the emerging CdTe-based semiconductor materials for detecting X- and gamma-ray radiation at or near room temperature (i.e., without cryogenic cooling). Potential applications of CZTS sensors include medical imaging, X-ray detection, and gamma-ray spectroscopy. Chemical passivation of CZTS is needed to reduce the conductivity of Te-rich surfaces, which reduces the noise and improves the device performance. In this study, we focus on the effect of surface passivation of CZTS using a 10% aqueous solution of ammonium fluoride. Th

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41

Cantor, Robin, and Hideo Naito. "Practical X-ray Spectrometry with Second-Generation Microcalorimeter Detectors." Microscopy Today 20, no. 4 (2012): 38–42. http://dx.doi.org/10.1017/s1551929512000429.

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X-ray spectroscopy is a widely used and extremely sensitive analytical technique for qualitative as well as quantitative elemental analysis. Typically, high-energy-resolution X-ray spectrometers are integrated with a high-spatial-resolution scanning electron microscope (SEM) or transmission electron microscope (TEM) for X-ray microanalysis applications. The focused electron beam of the SEM or TEM excites characteristic X rays that are emitted by the sample. The integrated X-ray spectrometer can then be used to identify and quantify the elemental composition of the sample on a sub-micron length

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42

Shen, Min, and Zhi Ling Tang. "Experiments and Evaluation Based Pixellated CZT Semiconductor Detector." Applied Mechanics and Materials 341-342 (July 2013): 1109–12. http://dx.doi.org/10.4028/www.scientific.net/amm.341-342.1109.

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Cadmium zinc telluride (CZT) material is one of the preferred materials for the fabrication of X-ray and gamma-ray detector. In this paper, it is presented an experimental detector system based on pixellated CZT semiconductor detector. At the same time, some research and design on the surface signal-readout method and the preamplifier circuitry is made. The signal coming from the CdZnTe material exposed to the radiation through the experiment is successfully required. The collection-efficiency between the electron and the hole in the anode is test when the different bias is applied in the pixe

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Komarskiy, Alexander Alexandrovich, Sergey Romanovich Korzhenevskiy, Andrey Viktorovich Ponomarev, and Nikita Alexandrovich Komarov. "Pulsed X-ray source with the pulse duration of 50 ns and the peak power of 70 MW for capturing moving objects." Journal of X-Ray Science and Technology 29, no. 4 (2021): 567–76. http://dx.doi.org/10.3233/xst-210873.

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BACKGROUND: Traditionally, X-ray systems for capturing moving objects consist of a continuous X-ray source and a detector that operates at a predetermined frame rate. OBJECTIVE: This study investigates the possibility of using pulsed X-ray source with an inductive energy storage device and a semiconductor opening switch for shooting moving objects. METHODS: The study uses a high-voltage pulse generator that has the following parameters namely, the pulse voltage amplitude up to 320 kV, the pulse current up to 240 A, the current pulse duration of about 50 ns, and the pulse repetition rate up to

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44

FITRIO, DAVID, SUHARDI TJOA, ANAND MOHAN, RONNY VELJANOVSKI, ANDREW BERRY, and GORAN PANJKOVIC. "A CMOS ANALOG INTEGRATED CIRCUIT FOR PIXEL X-RAY DETECTOR." Journal of Circuits, Systems and Computers 20, no. 01 (2011): 71–87. http://dx.doi.org/10.1142/s0218126611007086.

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A front-end read-out application specific integrated circuit (ASIC) for a multichannel pixel X-Ray detector system has been fabricated and tested. The chip provides signal amplification for pixelated compound semiconductors such as Cadmium Telluride ( CdTe ) and Cadmium Zinc Telluride ( CZT ) with either 1 mm or 200 μm pitch. Both the detector (compound semiconductor) and ASIC are combined to target future research applicable to spectroscopic imaging in high intensity X-Ray biomedical detector systems. The ASIC was fabricated in a 0.35 μm process by Austria Microsystems and consists of 32 chan

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45

Sarzi Amadè, Nicola, Manuele Bettelli, Nicola Zambelli, Silvia Zanettini, Giacomo Benassi, and Andrea Zappettini. "Gamma-Ray Spectral Unfolding of CdZnTe-Based Detectors Using a Genetic Algorithm." Sensors 20, no. 24 (2020): 7316. http://dx.doi.org/10.3390/s20247316.

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The analysis of γ-ray spectra can be an arduous task, especially in the case of room temperature semiconductor detectors, where several distortions and instrumental artifacts conceal the true spectral shape. We developed a genetic algorithm to perform the unfolding of γ-spectra in order to restore the true energy distribution of the incoming radiation. We successfully validated our approach on experimental spectra of four radionuclides (241Am, 57Co, 137Cs and 133Ba) acquired with two CdZnTe-based detectors with different contact geometries (single pixel and drift strip). The unfolded spectra c

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46

Sedlačková, Katarína, Bohumír Zaťko, Márius Pavlovič, Andrea Šagátová, and Vladimír Nečas. "Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors." International Journal of Modern Physics: Conference Series 50 (January 2020): 2060017. http://dx.doi.org/10.1142/s2010194520600174.

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High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy

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47

Samedov, Victor V. "Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry." EPJ Web of Conferences 170 (2018): 01014. http://dx.doi.org/10.1051/epjconf/201817001014.

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Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. Th

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Shams, H., H. Abou Gabal, M. Soliman, S. Ebrahim, and S. Agamy. "Development of CdS/CdTe Diode for X-Ray Sensor." WSEAS TRANSACTIONS ON CIRCUITS AND SYSTEMS 19 (January 14, 2021): 268–78. http://dx.doi.org/10.37394/23201.2020.19.29.

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Abstract:

Many methods are used to detect x-ray are incapable of accounting for the high x-ray flux generated by modern x-ray Instruments. The major technology for measurement of x-ray dose rate in real time is the ionizing chambers detectors, but it has some disadvantages like complexity. Also it has large size due to the importance of gas volume and pressure, high voltages, signal cables, and other specialized parts needed for its operation. Advances in the technology of CdTe semiconductor in solar cells industries allow the development of an inexpensive and compact solid-state X-ray sensor. As X-ray

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Amman, M., P. N. Luke, and S. E. Boggs. "Amorphous-semiconductor-contact germanium-based detectors for gamma-ray imaging and spectroscopy." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 579, no. 2 (2007): 886–90. http://dx.doi.org/10.1016/j.nima.2007.05.307.

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Chatani, Hiroshi. "Systematization of efficiency correction for gamma-ray disk sources with semiconductor detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 425, no. 1-2 (1999): 291–301. http://dx.doi.org/10.1016/s0168-9002(98)01413-2.

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