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1

Franco, Malerba. The semiconductor business: The economics of rapid growth and decline. Madison, Wis: University of Wisconsin Press, 1985.

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2

López, Enrique G. León. Principios fundamentales de los dispositivos de semiconductores. Mexico: Limusa, 1996.

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3

J, Bauer Anton, ed. Silicon carbide and related materials 2009: Selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. Stafa-Zurich, Switzerland: Trans Tech Publications, 2010.

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4

Velasco, Jaime González. Fotolectroquímica de semiconductores: Su aplicación a la conversión y almacenamiento de energía solar. Barcelona: Reverté, 2010.

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5

Vavilov, V. S., and N. A. Ukhin. Radiation Effects in Semiconductors and Semiconductor Devices. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4684-9069-5.

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6

Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03770-6.

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7

Shah, Jagdeep. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03299-2.

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8

Juha, Kostamovaara, and Vainshtein Sergey, eds. Breakdown phenomena in semiconductors and semiconductor devices. Singapore: World Scientific, 2005.

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9

Vavilov, V. S. Radiation Effects in Semiconductors and Semiconductor Devices. Boston, MA: Springer US, 1995.

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10

Shah, J. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. Berlin: Springer, 1996.

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11

(Firm), Lucent Technologies, ed. Ultrafast spectroscopy of semiconductors and semiconductor nanostructures. 2nd ed. Berlin: Springer Verlag, 1999.

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12

Argentina. Secretaría de Ciencia y Técnica. Subsecretaría de Informática y Desarrollo. La industria de semiconductores y los circuitos custom y semicustom: tendencias tecnologicas y economicas y perspectivas para Argentina. Buenos Aires: Secretaria de Ciencia y Tecnica, 1986.

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13

J, Glembocki O., Pollak Fred H, Song Jin-Joo, Society of Photo-optical Instrumentation Engineers., and Metallurgical Society (U.S.), eds. Modern optical characterization techniques for semiconductors and semiconductor devices. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1987.

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14

C, Shen S., ed. Narrow gap semiconductors: Proceedings of the Eighth International Conference on Narrow Gap Semiconductors, Shanghai, China, 21-24 April 1997. Singapore: World Scientific, 1998.

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15

Böer, K. W. Survey of semiconductor physics: Electronsand other particles in bulk semiconductors. New York: Van Nostrand Reinhold, 1990.

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16

L, Gunshor Robert, and Nurmikko Arto V, eds. II-VI blue/green light emitters: Device physics and epitaxial growth. San Diego: Academic Press, 1997.

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17

Kamichik, Stephen. Semiconductor essentials: For hobbyists, technicians & engineers. Indianapolis, IN: Prompt Publications, 1995.

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18

1936-, Sze S. M., ed. High-speed semiconductor devices. New York: Wiley, 1990.

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19

United States. National Advisory Committee on Semiconductors., ed. Capital investment in semiconductors: The lifeblood of the U.S. semiconductor industry. Arlington, Va: National Advisory Committee on Semiconductors, 1990.

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20

National Measurement Laboratory (U.S.). Office of Standard Reference Materials. Semiconductor. Gaithersburg, MD: U.S. Department of Commerce, National Institute of Standards and Technology, Standard Reference Materials, 1990.

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21

1950-, Coleman James J., ed. Selected papers on semiconductor diode lasers. Bellingham, Wash., USA: SPIE Optical Engineering Press, 1992.

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22

Sharma, Ashok K. Advanced semiconductor memories: Architectures, designs, and applications. Piscataway, NJ: IEEE Press, 2003.

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23

E, Levinshteĭn M., and Shur Michael, eds. Semiconductor technology: Processing and novel fabrication techniques. New York: Wiley, 1997.

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24

Symposium F on Techniques and Challenges for 300 mm Silicon (1998 Strasbourg, France). Techniques and challenges for 300 mm silicon: Processing, characterization, modelling and equipment : proceedings of Symposium F on Techniques and Challenges for 300 mm Silicon of the E-MRS 1998 Spring Conference, Strasbourg, France, 16-19 June 1998. Amsterdam: Elsevier, 1999.

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25

H, Francombe Maurice, ed. Non-crystalline films for device structures. San Diego: Acadmic Press, 2002.

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26

Singh, Jasprit. Dispositivos Semiconductores. MC Graw Hill, 2000.

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27

Chatelain, Jean Daniel. Dispositivos De Semiconductores. Editorial Limusa S.A. De C.V., 2002.

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28

Carroll, J. E. Rate Equations in Semiconductor Electronics. Cambridge University Press, 1990.

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29

Carroll, J. E. Rate Equations in Semiconductor Electronics. Cambridge University Press, 2011.

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30

Carroll, J. E. Rate Equations in Semiconductor Electronics. Cambridge University Press, 2009.

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31

Arrayás, Manuel. Electromagnetismo, circuitos y semiconductores. Dykinson, 2007.

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32

Foglia, Pasquale. Semiconductores y Circuitos Electronicos. American Technical Publishers, Incorporated, 2002.

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33

Arrayás, Manuel. Electromagnetismo, circuitos y semiconductores. Dykinson, 2007.

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34

Ven, J. C. J. Van de. Seleccion de Semiconductores de Potencia. Paraninfo, 1991.

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35

Rodríguez Martínez, Jairo Alejandro. Fundamentos de física para semiconductores. Universidad Santo Tomas, 2018. http://dx.doi.org/10.15332/li.lib.2018.00161.

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36

Muiderkring. Semiconductores Hand Book - Parte 2. Paraninfo, 1991.

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37

Pareja, J. Practicas de Electronica 2 - Semiconductores. McGraw-Hill Interamericana, 1992.

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38

Muiderkring. Semiconductores Hand Book - Parte 1. Paraninfo, 1991.

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39

García, José Gabriel Díaz. Propiedades optoelectrónicas de nanocristales Semiconductores. Lulu Press, Inc., 2008.

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40

Foglia, Pasquale. Experimentos Semiconductores y Circuitos Electronicos. American Technical Publishers, Incorporated, 2002.

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41

Pedro, Julián. Dispositivos semiconductores: Principios y modelos. Marcombo, 2015.

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42

Merino, Elías Muñoz. Nuevos semiconductores, nuevas dimensiones, nuevas luces. Real Academia de Ingeniería, 2009.

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43

Pernía, Alberto Martín, Miguel Ángel José Prieto, Juan Díaz González, Pedro José Villegas Sáiz, and Juan Antonio Martín Ramos. Inversores PWM y protección eléctrica de semiconductores. Servicio de Publicaciones de la Universidad de Oviedo, 2018.

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44

Rodriguez, Pedro Claudio. Semiconductores, Teoria Constructiva, Montaje y Circuitos Tipicos. Alsina, 2000.

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45

Sánchez, Óscar Corvo. Cuando la arena sirve para algo más: Semiconductores. Lekla Ediciones, 2020.

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46

Gutiérrez, Pablo Alonso. Estudio mediante espectroscopia Raman de la serie de semiconductores. Prensas de la Universidad de Zaragoza, 2009.

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47

Alonso Gutiérrez, Pablo. Estudio mediante espectroscopia Raman de la serie de semiconductores tetraédricos Zn1-xMnxGa2Se4. Prensas Universitarias de Zaragoza, 2009. http://dx.doi.org/10.26754/uz.978-84-92774-15-9.

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48

The semiconductor business: The economics of rapid growth and decline. London: F. Pinter, 1985.

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49

Garcia, Antonio Abellan, Jose Manuel Benavent Garcia, and Emilio Figueres Amoros. Electronica de Potencia - Teoria y Aplicaciones. Alfaomega Grupo Editor, 2000.

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50

Nitta, J. Spin generation and manipulation based on spin-orbit interaction in semiconductors. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0013.

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This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.
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