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Academic literature on the topic 'Semiconductors - Electrochemistry'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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Journal articles on the topic "Semiconductors - Electrochemistry"

1

Zhu, Bin, Liangdong Fan, Naveed Mushtaq, Rizwan Raza, Muhammad Sajid, Yan Wu, Wenfeng Lin, Jung-Sik Kim, Peter D. Lund, and Sining Yun. "Semiconductor Electrochemistry for Clean Energy Conversion and Storage." Electrochemical Energy Reviews 4, no. 4 (October 25, 2021): 757–92. http://dx.doi.org/10.1007/s41918-021-00112-8.

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AbstractSemiconductors and the associated methodologies applied to electrochemistry have recently grown as an emerging field in energy materials and technologies. For example, semiconductor membranes and heterostructure fuel cells are new technological trend, which differ from the traditional fuel cell electrochemistry principle employing three basic functional components: anode, electrolyte, and cathode. The electrolyte is key to the device performance by providing an ionic charge flow pathway between the anode and cathode while preventing electron passage. In contrast, semiconductors and derived heterostructures with electron (hole) conducting materials have demonstrated to be much better ionic conductors than the conventional ionic electrolytes. The energy band structure and alignment, band bending and built-in electric field are all important elements in this context to realize the necessary fuel cell functionalities. This review further extends to semiconductor-based electrochemical energy conversion and storage, describing their fundamentals and working principles, with the intention of advancing the understanding of the roles of semiconductors and energy bands in electrochemical devices for energy conversion and storage, as well as applications to meet emerging demands widely involved in energy applications, such as photocatalysis/water splitting devices, batteries and solar cells. This review provides new ideas and new solutions to problems beyond the conventional electrochemistry and presents new interdisciplinary approaches to develop clean energy conversion and storage technologies. Graphic Abstract

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Uosaki, Kohei. "(Invited) Photoelectrochemistry -Looking Back to the Past for the Future." ECS Meeting Abstracts MA2022-02, no. 48 (October 9, 2022): 1813. http://dx.doi.org/10.1149/ma2022-02481813mtgabs.

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Photoelectrochemistry, semiconductor electrochemistry, and/or photocatalysis are of active research fields and thousands of papers are published in these fields annually. Many research groups are attracted in these subjects because of their potential importance in achieving carbon neutral society based on solar energy, a renewable energy. Although semiconductor electrochemistry had been studied systematically since 1950's and many reviews and books were published by early 1970's,1-7 research on photoelectrochemistry became very active in the late 1970's after the 1st oil crisis triggered by the paper by Fujishima and Honda,8 in which they suggested that solar energy may be directly converted to a chemical energy, hydrogen, by using semiconductor/aqueous electrolyte solution/metal cells.8 Research activities were high in 1980's and the ECS has organized symposia on photoelectrochemistry/semiconductor electrochemistry in the annual meetings many times with the publications of proceeding volumes.9-14 Many important developments were made in the 1970's and 1980's. Major target of the photoelectrochemistry/photocatalysis research changed from solar energy conversion to environmental issues12, 13 and activities gradually declined due to the lack of funding, particularly in the US. There must be reasons why photoelectrochemistry lost supports as solar energy conversion process in 1990's and it is a good time to look back what had been achieved, what were the problems, and are these problems solved by now. In this talk, I will try to sum up the results achieved by 1990's and compare them with current activities. References 1. M. Green, in Modem Aspects of Electrochemistry, No. 2. Ed. by J. O'M. Bockris, Butterworths, London, 343-407 (1959). 2. J. F. Dewald. in Semiconductors. ACS Monograph, No. 140, Ed. by N. B. Hannay, Reinhold, New York, 727-752 (1959). 3. H. Gerischer. in Adv. Electrochem. Electrochem. Eng., Vol. 1, Ed. by P. Delahay, lnterscience, New York, 139-232 (1961). 4. P. J. Holmes. Ed., The Electrochemistry of Semiconductors, Academic. London, 1962. 5. V. A. Myamlin and Yu. V. Pleskov, Electrochemistry of Semiconductors. Plenum, New York. 1967. 6. H. Gerischer, in Physical Chemistry: An Advanced Treatise, Vol. IXA. Ed. by H. Eyring. Academic. New York. 1970, Chap. 5. 7. S. R. Morrison, Prog. Surf. Sci., 1(1971) 105. 8. A. Fujishima and K. Honda, Nature, 238 (1972) 37. 9. PV 77-3, "Semiconductor Liquid-Junction Solar Cells", Ed. by A. Heller. 10. PV 82-3, "Photoelectrochemistry: Fundamental Processes and Measurement Techniques. Ed. by W. L. Wallace, A. J. Nojik, and S. K. Deb. 11. PV 88-14, "Photoelectrochemistry and Electrosynthesis on Semiconducting Materials", Ed. by D.S. Ginley, A. Nojik, N. Armstrong, K. Honda, A. Fujishima, T. Sakata, and T. Kawai. 12. PV 93-18, Environmental Aspects of Electrochemistry and Photoelectrochemistry'', Ed. by M. Tomkiewicz, H. Yoneyama, R. Haynes, and Y. Hori. 13. PV 94-19, "Water Purification by Photocatalytic, Photoelectrochemical, and Electrochemical Processes", Ed. by T. L. Rose, E. Rudd, 0. Murphy, and B. E. Conway. 14. PV 97-20, "Photoelectrochemistry", Ed. by K. Rajeshwar, L. M. Peter, A. Fujishima, D. Meissner, and M. Tomkiewicz.

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FRANKENTHAL, Robert P. "Passivation of Metals and Semiconductors." Denki Kagaku oyobi Kogyo Butsuri Kagaku 60, no. 6 (June 5, 1992): 453. http://dx.doi.org/10.5796/electrochemistry.60.453.

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Melvin, Ambrose A., Eric Lebraud, Patrick Garrigue, and Alexander Kuhn. "Light and electric field induced unusual large-scale charge separation in hybrid semiconductor objects." Physical Chemistry Chemical Physics 22, no. 39 (2020): 22180–84. http://dx.doi.org/10.1039/d0cp03262j.

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5

Kumar, Amit, SharonR Lunt, PatrickG Santangelo, BruceJ Tufts, and NathanS Lewis. "Electrochemistry of semiconductors in non-aqueous solvents." Electrochimica Acta 34, no. 12 (December 1989): 1899. http://dx.doi.org/10.1016/0013-4686(89)85080-7.

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6

Kohl, Paul. "(Invited) Photoelectrochemical Processing of Semiconductor Devices." ECS Meeting Abstracts MA2022-02, no. 30 (October 9, 2022): 1105. http://dx.doi.org/10.1149/ma2022-02301105mtgabs.

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Many of the chemical processes used to fabricate and metallize semiconductor devices are based on oxidation-reduction reaction. Electro-chemical processes using the semiconductor itself have the advantage of being able to photo-generate the reactants within the semiconductor to carryout local reactions. The development of photoelectrochemical methods to process features in semiconductor devices is a subject unique to the Electrochemical Society because it is at the intersection of electrochemistry and semiconductor device fabrication. Specific symposia at ECS meeting have explored these subjects. In particular, Noel Buckley was a motivating force behind the State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) symposium series which offered venues for presenting interdisciplinary results of this kind. In this talk, several examples of chemical and photoelectrochemical processes for semiconductor device manufacturing from past ECS SOTAPOCS symposia, organized by Noel Buckley, will be described.

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van de Ven, J., and H. J. P. Nabben. "Anisotropic Photoetching of III–V Semiconductors: I . Electrochemistry." Journal of The Electrochemical Society 137, no. 5 (May 1, 1990): 1603–10. http://dx.doi.org/10.1149/1.2086736.

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Noel, M., and N. Suryanarayanan. "Electrochemistry of metals and semiconductors in fluoride media." Journal of Applied Electrochemistry 35, no. 1 (January 2005): 49–60. http://dx.doi.org/10.1007/s10800-004-2400-y.

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Peter, Laurence. "Electrochemistry of semiconductors and electronics. Processes and devices." Electrochimica Acta 39, no. 1 (January 1994): 157–58. http://dx.doi.org/10.1016/0013-4686(94)85027-5.

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Wang, Xuejiao, Erjin Zhang, Huimin Shi, Yufeng Tao, and Xudong Ren. "Semiconductor-based surface enhanced Raman scattering (SERS): from active materials to performance improvement." Analyst 147, no. 7 (2022): 1257–72. http://dx.doi.org/10.1039/d1an02165f.

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We review the recent progress in semiconductor-based SERS. We mainly discuss the enhancement mechanism, SERS-active materials for semiconductors, and potential strategies to improve the SERS performance.

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Dissertations / Theses on the topic "Semiconductors - Electrochemistry"

1

Taylor, C. "Studies of the electrochemical dissolution of III-V semiconductors." Thesis, University of Salford, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.376880.

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Birkin, Peter Robert. "Microelectrochemical enzyme transistors." Thesis, University of Southampton, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240628.

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Bonometti, V. "ELECTROCHEMISTRY FOR THE DEVELOPMENT OF INNOVATIVE THREE-DIMENSIONAL AND CHIRAL THIOPHENE-BASED ORGANIC SEMICONDUCTORS." Doctoral thesis, Università degli Studi di Milano, 2013. http://hdl.handle.net/2434/215537.

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Organic conducting polymers are efficient materials for a wide range of applications, ranging from energetics and electronics (bulk-heterojunction solar cells, dye-sensitized solar cells, organic light-emitting diodes, organic field effect transistors) to sensoristics, offering the advantage of being light-weight, flexible, low-cost compounds, thus providing a valid and interesting alternative to traditional inorganic semiconductors. Electrochemistry plays an important role in the study of these smart materials, being a powerful tool to determine the mechanisms of the electron-transfer processes occurring during the reduction/oxidation cycles of these molecules when, deposited as films on electrodic surfaces. Cyclic voltammetry is an essential tool for the experimental evaluation of the HOMO and LUMO levels and of the HOMO-LUMO gap, to be compared with spectroscopical and theoretical values, in order to better understand the relationships between structure and electronic properties and to evaluate the most suitable application for the new molecules. In addition, the combination of cyclic voltammetry with electrochemical quartz crystal microbalance EQCM technique and electrochemical impedance spectroscopy (EIS) affords further information about the mechanisms of the electrochemical coupling of polymerogenic units and,the resitance of the polymer films to mass and charge transfers. In the present PhD thesis, innovative thiophene-based organic semiconductors have been designed and characterized by cyclic voltammetry, in combination with many other electrochemical and spectroscopic techniques (EQCM, EIS, in situ UV-Vis-NIR, ESR and circular dichroism spectroscopy, AFM and SEM imaging) in order to obtain a complete insight into the new materials, to better understand their intrinsic properties for a more efficient target-oriented design. Particular attention was devoted to three-dimensional molecules (i.e., the so called “genetically-modified” spider-like oligothiophenes, derived from a previous work on branched all-thiophene molecules)[1,2] that fulfil the requirements of branching (which provides the polymers with a remarkable solubility in common organic apolar solvents, ensuring an easy processability), of a significative effective conjugation and of the possibility of fine tuning the HOMO and LUMO levels, by suitable structural modifications in the light of possible applications in organic photovoltaics. Another class of three-dimensional multithiophene compounds is that of the inherently chiral molecules. It would be a highly innovative result to find a material which would combine the potentialities of chirality (i.e., the ordered spontaneous chain assembling induced by chirality, the noncentrosymmetry associated to chiral materials, which is a prerequisite for second order nonlinear optical applications, the ability of chiral molecules to discriminate between antipodes, as required in sensors designed for the detection of chiral analytes, the possibility for a chiral semiconductor to be employed in asymmetric electrosynthesis) with the advantages typical of the conducting polymers (i.e., electrical conductivity, redox and pH switching capability, electrochromism, low cost, easy processability, light weight). According to the literature, the most common strategy to obtain chiral conducting polymers is to attach chiral pendants (i.e. natural sugar and aminoacids, or manmade designed for specific applications) to the conjugated electroactive backbone. The presence of carbon stereocenters invariably characterizes the chiral substituents. Only in few cases, however, significant chirality manifestations have been found in polymers designed according to this strategy, also because the experimental conditions (i.e., solvent, pH, temperature) strongly affect the chirality manifestation of the polymers. In the present case, instead, chirality is due to a tailored torsion internally produced along the conjugated backbone, that does not completely interrupt the conjugated sequence, thus ensuring the conductivity of the material in the doped state. The stereogenic element is an atropisomeric bithiophene or bipyrrole scaffold, introduced into the conjugated backbone of the monomer. The polymerization sites of the monomers are homotopic, thus granting the constitutional regularity of the polymers. This requirement is satisfied only by molecules belonging to the C2 point group which guarantees that all the products of the polymerization, from olygomers to polymers, are C2 symmetric as well. Finally, the monomers are properly and easily functionalized in different positions in order to tailor their properties to specific applications. In the present work, a complete characterization of the monomers (and of the oligomers derived from them by electroxidation) has been performed: particularly interesting is the circular dichroism behaviour of the enantiopure films electrodeposited on ITO electrodes, detected in situ during cyclic voltammetry scans. Upon polarization (p-doping), the maximum intensity in the CD signal decreases (while another band increases at higher wavelength, corresponding to the formation of the polaronic state) possibly because of a partial flattening of the atropisomeric structure (coherent with the enhanced conductivity in the doped state). This phenomenon is completely reversible, and chirality is fully recovered switching the potential back to the neutral state. In conclusion, this work on different families of molecules has given evidence of how electrochemistry is an essential tool in modern materials science, being a fast and reliable method to determine the crucial parameters for applications in the most advanced technological fields, affording a deeper understanding of the relationships between molecular structure and electronic properties and effectively assisting the target-oriented molecular design. In addition, the class of the inherently chiral monomers opens up a new path to the applications of chiral organic semiconductors in many different fields, both as racemates (active layers in bulk-heterojunction solar cells, on the basis of the preliminary knowledge of the HOMO and LUMO gaps and levels in these molecules; the cavities present in the polymers could be tailored to comfortably host bulky fullerene units for the preparation of donor-acceptor blends, for the construction of traditional or Molecularly Imprinted Polymers sensors) and as enantiopure materials (preparation of sensors for the recognition of biorelevant chiral analytes, preparation of chiral electrodes for performing electrochemical enantioselective oxo-reduction processes, exploitation of the inherent chirality and of the highly ordered solid-state structure in photoelectrochemical applications). [1] T. Benincori, M. Capaccio, F. De Angelis,L. Falciola, M. Muccini, P. Mussini, A. Ponti, S. Toffanin, P. Traldi, F. Sannicolò, Chem. Eur. J., 2008, 14, 459 – 471; [2] T. Benincori, V. Bonometti, F. De Angelis, L. Falciola, M. Muccini, P. R. Mussini, T. Pilati, G. Rampinini, S. Rizzo, S. Toffanin, F. Sannicolò, Chem. Eur. J., 2010, 16, 9086 – 9098

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Boxall, Colin. "The photoelectrochemistry of colloidal semiconductors." Thesis, Imperial College London, 1987. http://hdl.handle.net/10044/1/38239.

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Ritenour, Andrew. "Close-Spaced Vapor Transport and Photoelectrochemistry of Gallium Arsenide for Photovoltaic Applications." Thesis, University of Oregon, 2015. http://hdl.handle.net/1794/19202.

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The high balance-of-system costs of photovoltaic installations indicate that reductions in absorber cost alone are likely insufficient for photovoltaic electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which both yield high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III-V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the limited scalability of traditional syntheses, which rely on expensive reactors and employ toxic and pyrophoric gas-phase precursors such as arsine and trimethyl gallium. This work describes GaAs films made by close-spaced vapor transport, a potentially scalable technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient to deposit crystalline films with similar electronic properties to GaAs prepared using traditional syntheses. Although close-spaced vapor transport of GaAs was first developed in 1963, there were few examples of GaAs photovoltaic devices made using this method in the literature at the onset of this project. Furthermore, it was unclear whether close-spaced vapor transport could produce GaAs films appropriate for use in photovoltaics. The goal of this project was to create and study GaAs devices made using close-spaced vapor transport and determine whether the technique could be used for production of grid-connected GaAs photovoltaics. In Chapter I the design of the vapor transport reactor, the chemistry of crystal growth, and optoelectronic characterization techniques are discussed. Chapter II focuses on compositional measurements, doping, and improved electronic quality in CSVT GaAs. Chapter III describes several aspects of the interplay between structure and electronic properties of photoelectrochemical devices. Chapter IV addresses heteroepitaxial growth of GaAs on "virtual" Ge-on-Si substrates. This is a topic of importance for the broader III-V community as well as the photovoltaic community, as Si is the substrate of choice in many areas of industry. This dissertation includes unpublished and previously published co-authored material.

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Benaissa, Manel. "ÉLABORATION D'OXYDES DOPÉS DE TYPE DMS (semi-conducteurs magnétiques dilués) PAR ÉLECTRODÉPOSITION SOUS CHAMP MAGNÉTIQUE." Thesis, Reims, 2016. http://www.theses.fr/2016REIMS011/document.

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Nos travaux concernent la synthèse et la caractérisation d'oxydes dopés par la méthode d'électrodéposition sous champ magnétique.L'enjeu d'une telle recherche est double puisqu'il associe une étude de synthèses électrochimiques et l'obtention de matériaux associant des propriétés semi-conductrices et magnétiques.Les oxydes étudiés sont l'oxyde de cuivre (I) dopé par le manganèse ou par le cobalt, et l'oxyde de zinc dopé par le cuivre.Notre objectif est l'élaboration sous champ magnétique d'oxydes de type DMS (semi-conducteurs magnétiques dilués), et leurs caractérisations physiques et chimiques.En effet, l'addition du dopage et celui du champ magnétique appliqué pendant l'électrodéposition génèrent des effets sur les matériaux électrodéposés.Nous avons ainsi mis en évidence des modifications au niveau de la morphologie, de la texture, de la composition, et des propriétés optiques ou magnétiques des matériaux obtenus
Our work focuses on the synthesis and characterization of doped oxides by electrodeposition method under magnetic field superimposition.The goal of this research presents two challenges, because it combines a study of electrochemical synthesis and obtaining materials with optical and magnetic properties. The materials which have been studied are manganese or cobalt doped copper (I) oxide on the one hand, and the copper doped zinc oxide in the other hand.Our goal is the elaboration of diluted magnetic oxides, and the study of their physical and chemical characterizations.Indeed, the effects of doping and of the magnetic field applied during the electrodeposition can provide interesting changes in morphology, texture, composition and optical and magnetic properties of the obtained materials

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Lane, R. L. "Semiconductor electrochemistry." Thesis, University of Oxford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.370280.

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Shpilevaya, Inga. "Surface characterisation and functional properties of modified diamond electrodes." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:55c8243f-3779-4bcc-878a-999a067cc9c4.

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In this work, the use of modified diamond as an electrode material with superlative physical and electrochemical properties was investigated in a number of electrochemical applications. The surface chemistry of three differing forms of diamond, namely boron-doped microcrystalline diamond, boron-doped diamond powder and detonation nanodiamond powder was modified utilising such strategies as hydrogen plasma treatment, reactive ion plasma etching along with various chemical treatments. The surface and functional properties of the modified diamond electrodes were studied using a wide spectrum of techniques. The electrochemical activity of these materials was concomitantly investigated in order to expand the knowledge of diamond electrochemistry and to establish an understanding of how the surface chemistry of these materials impacts their electrochemical performance. In the first study, the nanostructuring strategies of boron-doped diamond surface with platinum nanoparticles were developed. In particular, two types of diamond nanostructures were produced: one consisting of platinum particles located on the top of diamond nanorods, the other with platinum particles located in the bottom of diamond nanopits. For the first time, the experimental evidence proving the mechanism of the diamond nanostructuring process was reported. The electrochemical activity of these nanostructured diamond electrodes with regard to the electrochemical oxidation of glucose and methanol was investigated. In the second study, the relationship between the surface chemistry of three differing forms of diamond, including microcrystalline boron-doped diamond, boron-doped diamond powder as well as detonation nanodiamond powder, and the electrode fouling in the result of the adsorption processes in methyl viologen and anthraquinonedisulfonate solutions was investigated. The influence of two dissimilar surface terminations: hydrophobic H-terminated and hydrophilic O-terminated on the electrode performance was studied in detail. This work provides a useful insight on the likely reasons for the undesirable adsorption occurrence which may be experienced in many electroanalytical applications that utilise solid and powdered forms of diamond. The third project extends the discussion on the study of the diamond electrodes, modified with detonation nanodiamond and boron-doped diamond powders and investigates the electrochemical behaviour of these materials. In this work, charge transport within the diamond powder films, partition coefficients of different redox mediators along with heterogeneous electron transfer constants were identified. The chemical modification of these electrodes with platinum nanoparticles along with the mechanism of nucleation and growth of the latter were studied. The enhanced electrode performance with regard to methanol electrooxidation reaction was demonstrated. The fourth study investigates the preparation of nickel modified boron-doped diamond electrodes and ascertains the relationship between the surface chemistry of the modified diamond and the associated electrocatalytic performance of nickel nanoparticles in hydrogen peroxide and glucose electrooxidation. The fifth study reports on the development of a novel surface functionalization strategy, based on porphyrin and amide coupling chemistry, which allows the creation of hybrid biomimetic diamond interface that was used as the artificial β-alanine receptor.

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Said, Elias. "Electrolyte : Semiconductor Combinations for Organic Electronic Devices." Doctoral thesis, Linköpings universitet, Institutionen för teknik och naturvetenskap, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-15775.

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The discovery of semi-conducting organic materials has opened new possibilities for electronic devices and systems because of their solution processibility, lightweight and flexibility compared to inorganic semiconductors. The combination of semiconductors with electrolytes, and more especially organic semiconductors and solid electrolytes has attracted the attention of researchers because of the multiple phenomena originating from the simultaneous motion of electrons and ions. This thesis deals with organic-based devices whose working mechanism involves electrolytes. By measuring electrochromism induced by the field in isolated segments of conjugated polymer films, which is in contact with an electrolyte, the direction and the magnitude of the electric field along an electrolyte is quantified (paper I). In addition, using a polyanionic proton conductor in organic field-effect transistor (OFET) as gate dielectric results in low operation voltage and fast response thanks to the high capacitance of the electric double layer (EDLC) that is formed at organic semiconductor/ polyelectrolyte interface (paper III). Because an electrolyte is used as a gate insulator, the effect of the ionic currents on the performance of an EDLC-OFET has been investigated by varying the relative humidity of the device ambience (paper IV). Since the EDLC-OFET and the electrochromic display cell both are operated at low voltages, the transistor has been monolithically integrated with an electrochromic pixel, i.e. combining a solid state device and an electrochemical device (paper V). Further, a theoretical study of the electrostatic potential within a so called pen-heterojunction made up of two semi-infinite, doped semiconductor media separated by an electrolyte region is reported (paper II).

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Wang, Chen. "The Revival of Electrochemistry: Electrochemical Deposition of Metals in Semiconductor Related Research." Thesis, University of North Texas, 2005. https://digital.library.unt.edu/ark:/67531/metadc5574/.

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Adherent Cu films were electrodeposited onto polycrystalline W foils from purged solutions of 0.05 M CuSO4 in H2SO4 supporting electrolyte and 0.025 M CuCO3∙Cu(OH)2 in 0.32 M H3BO3 and corresponding HBF4 supporting electrolyte, both at pH = 1. Films were deposited under constant potential conditions at voltages between -0.6 V and -0.2 V versus Ag/AgCl. All films produced by pulses of 10 s duration were visible to the eye, copper colored, and survived a crude test called "the Scotch tape test", which involves sticking the scotch tape on the sample, then peeling off the tape and observing if the copper film peels off or not. Characterization by scanning electron microscopy (SEM)/energy dispersive X-ray (EDX) and X-ray photon spectroscopy (XPS) confirmed the presence of metallic Cu, with apparent dendritic growth. No sulfur impurity was observable by XPS or EDX. Kinetics measurements indicated that the Cu nucleation process in the sulfuric bath is slower than in the borate bath. In both baths, nucleation kinetics does not correspond to either instantaneous or progressive nucleation. Films deposited from 0.05 M CuSO4/H2SO4 solution at pH > 1 at -0.2 V exhibited poor adhesion and decreased Cu reduction current. In both borate and sulfate baths, small Cu nuclei are observable by SEM upon deposition at higher negative overpotentials, while only large nuclei (~ 1 micron or larger) are observed upon deposition at less negative potentials. Osmium metal has been successfully electrodeposited directly onto p-Si (100) from both Os3+ and Os4+ in both sulfuric and perchloric baths. This electrochemical deposition of osmium metal can provide sufficient amount of osmium which overcome ion beam implantation limitations. The deposited metal can undergo further processing to form osmium silicides, such as Os2Si3, which can be used as optical active materials. The higher osmium concentration results in large deposition currents and more negative peak potential due to larger transfer coefficient. No matter which supporting electrolyte is used, no stripping peak exists in this study. The oxidation ability of anion plays an important role in osmium electrodeposition because it will change the silicon substrate conductivity. In our case, perchloric acid oxidized silicon surface severely. Os4+ seems more favorable for reduction but has a stronger oxidization ability to lower the conductivity. The microscopic images verified osmium is deposited on silicon and forms cluster sizes of < 1 µm to > 10 µm. The Rutherford backscattering spectroscopy (RBS) data indicate osmium can diffuse into the silicon as far as 500 nm and the Si crystal structure is unchanged by the process. This means that the Si does not disassociate and migrate into deposited Os. Osmium is distributed randomly throughout the lattice interstitially. It appears field assisted diffusion can significantly drive the Os into Si (100). This finding is very valuable but needs further study.

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Books on the topic "Semiconductors - Electrochemistry"

1

Memming, Rüdiger. Semiconductor electrochemistry. Weinheim: Wiley-VCH, 2001.

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Sato, Norio. Electrochemistry at metal and semiconductor electrodes. Amsterdam: Elsevier, 1998.

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Frank, Ludwig, ed. Electrochemistry of semiconductors and electronics: Processes and devices. Park Ridge, N.J., U.S.A: Noyes Publications, 1992.

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Notten, P. H. L. Etching of III-V semiconductors: An electrochemical approach. Oxford, UK: Elsevier Advanced Technology, 1991.

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Enright, Daniel Brendan. Spectroscopic and electrochemical studies of nanoporous-nanocrystalline metaloxide semiconductor electrodes. Dublin: University College Dublin, 1996.

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Sharon, Maheshwar. An Introduction to the Physics and Electrochemistry of Semiconductors. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119274360.

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Magdalena, Nuñez, ed. Trends in electrochemistry research. New York: Nova Science Publishers, 2005.

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Magdalena, Nuñez, ed. Progress in electrochemistry research. Hauppauge, N.Y: Nova Science Publishers, 2005.

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Aruchamy, A. Photoelectrochemistry and Photovoltaics of Layered Semiconductors. Dordrecht: Springer Netherlands, 1992.

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Electrochemistry of silicon and its oxide. New York: Kluwer Academic/Plenum Publishers, 2001.

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Book chapters on the topic "Semiconductors - Electrochemistry"

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Memming, Rüdiger. "Electrochemical Decomposition of Semiconductors." In Semiconductor Electrochemistry, 267–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527688685.ch8.

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Filler, Michael A. "Semiconductors, Principles." In Encyclopedia of Applied Electrochemistry, 1953–58. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4419-6996-5_39.

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Kelly, John J., and A. F. van Driel. "The Electrochemistry of Porous Semiconductors." In Electrochemistry at the Nanoscale, 249–78. New York, NY: Springer New York, 2009. http://dx.doi.org/10.1007/978-0-387-73582-5_6.

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Batchelor, R. A., and A. Hamnett. "Surface States on Semiconductors." In Modern Aspects of Electrochemistry, 265–415. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3376-4_3.

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Rauh, David. "Compound Semiconductors, Electrochemical Decomposition." In Encyclopedia of Applied Electrochemistry, 238–45. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4419-6996-5_32.

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Kohl, Paul A. "Semiconductors Group IV, Electrochemical Decomposition." In Encyclopedia of Applied Electrochemistry, 1924–27. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4419-6996-5_35.

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Borisenko, Natalia. "Electrodeposition of Semiconductors in Ionic Liquids." In Electrochemistry in Ionic Liquids, 359–82. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-15132-8_12.

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Stickney, John. "Semiconductors, Electrochemical Atomic Layer Deposition (E-ALD)." In Encyclopedia of Applied Electrochemistry, 1947–53. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4419-6996-5_31.

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Willig, Frank, and Lars Gundlach. "Redox Processes at Semiconductors-Gerischer Model and Beyond." In Encyclopedia of Applied Electrochemistry, 1786–98. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4419-6996-5_41.

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Sun, I.-Wen, and Po-Yu Chen. "Semiconductors Groups II-IV and III-V, Electrochemical Deposition." In Encyclopedia of Applied Electrochemistry, 1927–47. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4419-6996-5_30.

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Conference papers on the topic "Semiconductors - Electrochemistry"

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Yajima, Takeaki, Tomonori Nishimura, and Akira Toriumi. "Local, isotropic, and damageless doping to oxide semiconductors by using electrochemistry." In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2017. http://dx.doi.org/10.1109/edtm.2017.7947526.

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Campion, Alan. "Raman Spectroscopy of Molecules Adsorbed on Solid Surfaces." In Laser Applications to Chemical Analysis. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/laca.1990.ma1.

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Raman spectroscopy is an exceptionally powerful probe of the structures and reactions of molecules on surfaces with applications in catalysis, corrosion, electrochemistry and electronic materials. Recent advances in technology have resulted in submonolayer sensitivity for a wide variety of molecules adsorbed on low surface area single crystal substrates which may be metals, semiconductors or dielectrics. This sensitivity, which does not require any source of either surface or resonance enhancement, has been achieved through an understanding of the underlying physics and careful implementation of the experimental design. The physics of surface Raman scattering will be discussed as it determines both the experimental geometries and surface selection rules. As an example of the chemical utility of the technique, the adsorption and reaction of pyromellitic dianhydride and oxydianiline to form polyimide will be discussed. Finally, special considerations relevant to electrochemistry will be described and a few comments will be made on the chemical mechanism of surface-enhanced Raman scattering.

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Tiginyanu, Ion, Eduard Monaico, and Veaceslav Popa. "Electrochemistry-based maskless nanofabrication." In 2012 International Semiconductor Conference (CAS 2012). IEEE, 2012. http://dx.doi.org/10.1109/smicnd.2012.6400703.

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Mamun, Mohammad Al, Yasmin Abdul Wahab, M. A. Motalib Hossain, Abu Hashem, Kamrul Alam Khan, Mohd Rafie Johan, Hanim Hussin, and Nurul Ezaila Alias. "Electrochemistry of Green Ag Nanoparticles Modified Electrode Surface." In 2022 IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2022. http://dx.doi.org/10.1109/icse56004.2022.9863176.

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Zortea, G. L. B., J. Friedrich, T. P. de Almeida, M. P. Cantão, and R. C. P. Rizzo-Domingues. "Catalysts evaluation CuO/n-type semiconductor oxide/Al2O3 in ethanol steam reforming reaction for obtaining hydrogen to fuel cell." In 2nd International Seminar on Industrial Innovation in Electrochemistry. São Paulo: Editora Blucher, 2016. http://dx.doi.org/10.5151/chempro-s3ie2016-10.

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Miller, C. C., S. Diol, C. A. Schmuttenmaer, J. Cao, D. A. Mantell, Y. Gao, and R. J. D. Miller. "Hot Electron Reaction Dynamics at GaAs(100) Surface Quantum Wells." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.thc.3.

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Surface mediated electron transfer is the most ubiquitous of all surface reaction types and forms the basis of electrochemistry and many imaging technologies (photography, xerography). This process also holds great promise as a simple system for efficient solar energy conversion. Providing interfacial charge transfer processes can be made to occur competitively with thermalization dynamics, it should be possible to store energy as chemical potential at hybrid semiconductor/molecular junctions and avoid heat losses in conventional solid state solar cells (and thereby double theoretical efficiency limits). This specific mechanism is referred to as the hot electron model for semiconductor photochemistry [1] (Fig.1) and requires that the electron transfer occur in the strong coupling or adiabatic regime. The degree of electronic coupling between a discrete molecular state adsorbed to the surface and the highly delocalized band states of the single crystal is the key fundamental issue. In addition, the dynamics of interfacial charge transfer have to be quantified relative to the electron thermalization dynamics of field accelerated electrons (≤ 1 eV above the CBM) which are the dominant source of photoinduced hot electrons at semiconductor liquid junctions.

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Zhang, Shenghan, Yu Tan, and Kexin Liang. "Electrochemistry Studies of Semiconductor Properties of Structure Materials in the Nuclear Power Plants by Zinc Injection Technique." In 2011 Asia-Pacific Power and Energy Engineering Conference (APPEEC). IEEE, 2011. http://dx.doi.org/10.1109/appeec.2011.5748627.

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Singh, P., V. Cozzolino, G. Galyon, R. Logan, K. Troccia, J. L. Hurd, and P. Tsai. "Dendritic Growth Failure of a Mesa Diode." In ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0179.

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Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

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Chen, Kok Hao, and Jong Hyun Choi. "DNA Oligonucleotide-Templated Nanocrystals: Synthesis and Novel Label-Free Protein Detection." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-11958.

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Semiconductor and magnetic nanoparticles hold unique optical and magnetic properties, and great promise for bio-imaging and therapeutic applications. As part of their stable synthesis, the nanocrystal surfaces are usually capped by long chain organic moieties such as trioctylphosphine oxide. This capping serves two purposes: it saturates dangling bonds at the exposed crystalline lattice, and it prevents irreversible aggregation by stabilizing the colloid through entropic repulsion. These nanocrystals can be rendered water-soluble by either ligand exchange or overcoating, which hampers their widespread use in biological imaging and biomedical therapeutics. Here, we report a novel scheme of synthesizing fluorescent PbS and magnetic Fe3O4 nanoparticles using DNA oligonucleotides. Our method of PbS synthesis includes addition of Na2S to the mixture solution of DNA sequence and Pb acetate (at a fixed molar ratio of DNA/S2−/Pb2+ of 1:2:4) in a standard TAE buffer at room temperature in the open air. In the case of Fe3O4 particle synthesis, ferric and ferrous chloride were mixed with DNA in DI water at a molar ratio of DNA/Fe2+/Fe3+ = 1:4:8 and the particles were formed via reductive precipitation, induced by increasing pH to ∼11 with addition of ammonium hydroxide. These nanocrystals are highly stable and water-soluble immediately after the synthesis, due to DNA termination. We examined the surface chemistry between oligonucleotides and nanocrystals using FTIR spectroscopy, and found that the different chemical moieties of nucleobases passivate the particle surface. Strong coordination of primary amine and carbonyl groups provides the chemical and colloidal stabilities, leading to high particle yields (Figure 1). The resulting PbS nanocrystals have a distribution of 3–6 nm in diameter, while a broader size distribution is observed with Fe3O4 nanoparticles as shown in Figure 1b and c, respectively. A similar observation was reported with the pH change-induced Fe3O4 particles of a bimodal size distribution where superparamagnetic and ferrimagnetic magnetites co-exist. In spite of the differences, FTIR measurements suggest that the chemical nature of the oligonucleotide stabilization in this case is identical to the PbS system. As a particular application, we demonstrate that aptamer-capped PbS QD can detect a target protein based on selective charge transfer, since the oligonucleotide-templated synthesis can also serve the additional purpose of providing selective binding to a molecular target. Here, we use thrombin and a thrombin-binding aptamer as a model system. These QD have diameters of 3∼6 nm and fluoresce around 1050 nm. We find that a DNA aptamer can passivate near IR fluorescent PbS nanocrystals, rendering them water-soluble and stable against aggregation, and retain the secondary conformation needed to selectively bind to its target, thrombin, as shown in Figure 2. Importantly, we find that when the aptamer-functionalized nanoparticles binds to its target (only the target), there is a highly systematic and selective quenching of the PL, even in high concentrations of interfering proteins as shown in Figure 3a and b. Thrombin is detected within one minute with a detection limit of ∼1 nM. This PL quenching is attributed to charge transfer from functional groups on the protein to the nanocrystals. A charge transfer can suppress optical transition mechanisms as we observe a significant decrease in QD absorption with target addition (Figure 3c). Here, we rule out other possibilities including Forster resonance energy transfer (FRET) and particle aggregation, because thrombin absorb only in the UV, and we did not observe any significant change in the diffusion coefficient of the particles with the target analyte, respectively. The charge transfer-induced photobleaching of QD and carbon nanotubes was observed with amine groups, Ru-based complexes, and azobenzene compounds. This selective detection of an unlabeled protein is distinct from previously reported schemes utilizing electrochemistry, absorption, and FRET. In this scheme, the target detection by a unique, direct PL transduction is observed even in the presence of high background concentrations of interfering negatively or positively charged proteins. This mechanism is the first to selectively modulate the QD PL directly, enabling new types of label free assays and detection schemes. This direct optical transduction is possible due to oligonucleotidetemplated surface passivation and molecular recognition. This chemistry may lead to more nanoparticle-based optical and magnetic probes that can be activated in a highly chemoselective manner.

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Reports on the topic "Semiconductors - Electrochemistry"

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Osseo-Asare, K. Semiconductor electrochemistry of coal pyrite. Office of Scientific and Technical Information (OSTI), May 1992. http://dx.doi.org/10.2172/7205370.

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Osseo-Asare, K., and D. Wei. Semiconductor electrochemistry of coal pyrite. Office of Scientific and Technical Information (OSTI), February 1993. http://dx.doi.org/10.2172/6939018.

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Osseo-Asare, K., and D. Wei. Semiconductor electrochemistry of coal pyrite. Office of Scientific and Technical Information (OSTI), January 1992. http://dx.doi.org/10.2172/6815957.

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Osseo-Asare, K., and D. Wei. Semiconductor electrochemistry of coal pyrite. Office of Scientific and Technical Information (OSTI), January 1992. http://dx.doi.org/10.2172/6857273.

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Osseo-Asare, K., and D. Wei. Semiconductor electrochemistry of coal pyrite. Technical progress report, April--June 1992. Office of Scientific and Technical Information (OSTI), December 1992. http://dx.doi.org/10.2172/10102815.

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Osseo-Asare, K., and D. Wei. Semiconductor electrochemistry of coal pyrite. Technical progress report, October--December 1992. Office of Scientific and Technical Information (OSTI), February 1993. http://dx.doi.org/10.2172/10143649.

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Osseo-Asare, K., and D. Wei. Semiconductor electrochemistry of coal pyrite. Technical progress report, October--December 1993. Office of Scientific and Technical Information (OSTI), March 1994. http://dx.doi.org/10.2172/10157565.

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Osseo-Asare, K., and D. Wei. Semiconductor electrochemistry coal pyrite. Quarterly technical progress report, October--December 1994. Office of Scientific and Technical Information (OSTI), January 1995. http://dx.doi.org/10.2172/211417.

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Osseo-Asare, K., and Dawei Wei. Semiconductor electrochemistry of coal pyrite. Technical progress report, January--March 1994. Office of Scientific and Technical Information (OSTI), May 1994. http://dx.doi.org/10.2172/10162634.

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Osseo-Asare, K. Semiconductor electrochemistry of coal pyrite. Technical progress report, January--March 1992. Office of Scientific and Technical Information (OSTI), May 1992. http://dx.doi.org/10.2172/10163507.

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