To see the other types of publications on this topic, follow the link: Semiconductors - Electrochemistry.

Journal articles on the topic 'Semiconductors - Electrochemistry'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Semiconductors - Electrochemistry.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Zhu, Bin, Liangdong Fan, Naveed Mushtaq, Rizwan Raza, Muhammad Sajid, Yan Wu, Wenfeng Lin, Jung-Sik Kim, Peter D. Lund, and Sining Yun. "Semiconductor Electrochemistry for Clean Energy Conversion and Storage." Electrochemical Energy Reviews 4, no. 4 (October 25, 2021): 757–92. http://dx.doi.org/10.1007/s41918-021-00112-8.

Full text
Abstract:
AbstractSemiconductors and the associated methodologies applied to electrochemistry have recently grown as an emerging field in energy materials and technologies. For example, semiconductor membranes and heterostructure fuel cells are new technological trend, which differ from the traditional fuel cell electrochemistry principle employing three basic functional components: anode, electrolyte, and cathode. The electrolyte is key to the device performance by providing an ionic charge flow pathway between the anode and cathode while preventing electron passage. In contrast, semiconductors and derived heterostructures with electron (hole) conducting materials have demonstrated to be much better ionic conductors than the conventional ionic electrolytes. The energy band structure and alignment, band bending and built-in electric field are all important elements in this context to realize the necessary fuel cell functionalities. This review further extends to semiconductor-based electrochemical energy conversion and storage, describing their fundamentals and working principles, with the intention of advancing the understanding of the roles of semiconductors and energy bands in electrochemical devices for energy conversion and storage, as well as applications to meet emerging demands widely involved in energy applications, such as photocatalysis/water splitting devices, batteries and solar cells. This review provides new ideas and new solutions to problems beyond the conventional electrochemistry and presents new interdisciplinary approaches to develop clean energy conversion and storage technologies. Graphic Abstract
APA, Harvard, Vancouver, ISO, and other styles
2

Uosaki, Kohei. "(Invited) Photoelectrochemistry -Looking Back to the Past for the Future." ECS Meeting Abstracts MA2022-02, no. 48 (October 9, 2022): 1813. http://dx.doi.org/10.1149/ma2022-02481813mtgabs.

Full text
Abstract:
Photoelectrochemistry, semiconductor electrochemistry, and/or photocatalysis are of active research fields and thousands of papers are published in these fields annually. Many research groups are attracted in these subjects because of their potential importance in achieving carbon neutral society based on solar energy, a renewable energy. Although semiconductor electrochemistry had been studied systematically since 1950's and many reviews and books were published by early 1970's,1-7 research on photoelectrochemistry became very active in the late 1970's after the 1st oil crisis triggered by the paper by Fujishima and Honda,8 in which they suggested that solar energy may be directly converted to a chemical energy, hydrogen, by using semiconductor/aqueous electrolyte solution/metal cells.8 Research activities were high in 1980's and the ECS has organized symposia on photoelectrochemistry/semiconductor electrochemistry in the annual meetings many times with the publications of proceeding volumes.9-14 Many important developments were made in the 1970's and 1980's. Major target of the photoelectrochemistry/photocatalysis research changed from solar energy conversion to environmental issues12, 13 and activities gradually declined due to the lack of funding, particularly in the US. There must be reasons why photoelectrochemistry lost supports as solar energy conversion process in 1990's and it is a good time to look back what had been achieved, what were the problems, and are these problems solved by now. In this talk, I will try to sum up the results achieved by 1990's and compare them with current activities. References 1. M. Green, in Modem Aspects of Electrochemistry, No. 2. Ed. by J. O'M. Bockris, Butterworths, London, 343-407 (1959). 2. J. F. Dewald. in Semiconductors. ACS Monograph, No. 140, Ed. by N. B. Hannay, Reinhold, New York, 727-752 (1959). 3. H. Gerischer. in Adv. Electrochem. Electrochem. Eng., Vol. 1, Ed. by P. Delahay, lnterscience, New York, 139-232 (1961). 4. P. J. Holmes. Ed., The Electrochemistry of Semiconductors, Academic. London, 1962. 5. V. A. Myamlin and Yu. V. Pleskov, Electrochemistry of Semiconductors. Plenum, New York. 1967. 6. H. Gerischer, in Physical Chemistry: An Advanced Treatise, Vol. IXA. Ed. by H. Eyring. Academic. New York. 1970, Chap. 5. 7. S. R. Morrison, Prog. Surf. Sci., 1(1971) 105. 8. A. Fujishima and K. Honda, Nature, 238 (1972) 37. 9. PV 77-3, "Semiconductor Liquid-Junction Solar Cells", Ed. by A. Heller. 10. PV 82-3, "Photoelectrochemistry: Fundamental Processes and Measurement Techniques. Ed. by W. L. Wallace, A. J. Nojik, and S. K. Deb. 11. PV 88-14, "Photoelectrochemistry and Electrosynthesis on Semiconducting Materials", Ed. by D.S. Ginley, A. Nojik, N. Armstrong, K. Honda, A. Fujishima, T. Sakata, and T. Kawai. 12. PV 93-18, Environmental Aspects of Electrochemistry and Photoelectrochemistry'', Ed. by M. Tomkiewicz, H. Yoneyama, R. Haynes, and Y. Hori. 13. PV 94-19, "Water Purification by Photocatalytic, Photoelectrochemical, and Electrochemical Processes", Ed. by T. L. Rose, E. Rudd, 0. Murphy, and B. E. Conway. 14. PV 97-20, "Photoelectrochemistry", Ed. by K. Rajeshwar, L. M. Peter, A. Fujishima, D. Meissner, and M. Tomkiewicz.
APA, Harvard, Vancouver, ISO, and other styles
3

FRANKENTHAL, Robert P. "Passivation of Metals and Semiconductors." Denki Kagaku oyobi Kogyo Butsuri Kagaku 60, no. 6 (June 5, 1992): 453. http://dx.doi.org/10.5796/electrochemistry.60.453.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Melvin, Ambrose A., Eric Lebraud, Patrick Garrigue, and Alexander Kuhn. "Light and electric field induced unusual large-scale charge separation in hybrid semiconductor objects." Physical Chemistry Chemical Physics 22, no. 39 (2020): 22180–84. http://dx.doi.org/10.1039/d0cp03262j.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Kumar, Amit, SharonR Lunt, PatrickG Santangelo, BruceJ Tufts, and NathanS Lewis. "Electrochemistry of semiconductors in non-aqueous solvents." Electrochimica Acta 34, no. 12 (December 1989): 1899. http://dx.doi.org/10.1016/0013-4686(89)85080-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Kohl, Paul. "(Invited) Photoelectrochemical Processing of Semiconductor Devices." ECS Meeting Abstracts MA2022-02, no. 30 (October 9, 2022): 1105. http://dx.doi.org/10.1149/ma2022-02301105mtgabs.

Full text
Abstract:
Many of the chemical processes used to fabricate and metallize semiconductor devices are based on oxidation-reduction reaction. Electro-chemical processes using the semiconductor itself have the advantage of being able to photo-generate the reactants within the semiconductor to carryout local reactions. The development of photoelectrochemical methods to process features in semiconductor devices is a subject unique to the Electrochemical Society because it is at the intersection of electrochemistry and semiconductor device fabrication. Specific symposia at ECS meeting have explored these subjects. In particular, Noel Buckley was a motivating force behind the State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) symposium series which offered venues for presenting interdisciplinary results of this kind. In this talk, several examples of chemical and photoelectrochemical processes for semiconductor device manufacturing from past ECS SOTAPOCS symposia, organized by Noel Buckley, will be described.
APA, Harvard, Vancouver, ISO, and other styles
7

van de Ven, J., and H. J. P. Nabben. "Anisotropic Photoetching of III–V Semiconductors: I . Electrochemistry." Journal of The Electrochemical Society 137, no. 5 (May 1, 1990): 1603–10. http://dx.doi.org/10.1149/1.2086736.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Noel, M., and N. Suryanarayanan. "Electrochemistry of metals and semiconductors in fluoride media." Journal of Applied Electrochemistry 35, no. 1 (January 2005): 49–60. http://dx.doi.org/10.1007/s10800-004-2400-y.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Peter, Laurence. "Electrochemistry of semiconductors and electronics. Processes and devices." Electrochimica Acta 39, no. 1 (January 1994): 157–58. http://dx.doi.org/10.1016/0013-4686(94)85027-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Wang, Xuejiao, Erjin Zhang, Huimin Shi, Yufeng Tao, and Xudong Ren. "Semiconductor-based surface enhanced Raman scattering (SERS): from active materials to performance improvement." Analyst 147, no. 7 (2022): 1257–72. http://dx.doi.org/10.1039/d1an02165f.

Full text
Abstract:
We review the recent progress in semiconductor-based SERS. We mainly discuss the enhancement mechanism, SERS-active materials for semiconductors, and potential strategies to improve the SERS performance.
APA, Harvard, Vancouver, ISO, and other styles
11

Fregnaux, Mathieu, Muriel Bouttemy, Damien Aureau, Solene Bechu, Arnaud Etcheberry, and Anne-Marie Goncalves. "(Invited) Outstanding Contributions of Liquid Ammonia on III-V Semiconductors (Photo)-Electrochemistry." ECS Transactions 109, no. 3 (September 30, 2022): 31–36. http://dx.doi.org/10.1149/10903.0031ecst.

Full text
Abstract:
Due to its high purity (99.9995%) liquid ammonia (NH3 liq.) has found a distinguished place in electrochemical studies of III-V semiconductors (III-Vsc) at low temperature (-55°C and atmospheric preasure). NH3 liq. provides interfacial electrochemistry in an original environment strongly different from the aqueous medium. However, in both solvents, the concepts of interfacial electrochemistry are the same onto III-Vsc. The contribution of NH3 liq. is significant in the understanding of fundamental electrochemical reactions such as hydrogen evolution and oxygen photo-reduction mechanism on III-Vsc (InP and GaAs). The aim of this article is to describe why NH3 liq. is a powerful solvent to understand charge transfer mechanisms at the interface III-Vsc/electrolyte.
APA, Harvard, Vancouver, ISO, and other styles
12

Gerischer, H. "The impact of semiconductors on the concepts of electrochemistry." Electrochimica Acta 35, no. 11-12 (November 1990): 1677–99. http://dx.doi.org/10.1016/0013-4686(90)87067-c.

Full text
APA, Harvard, Vancouver, ISO, and other styles
13

Audebert, Pierre, Malgorzata Zagorska, and Mieczyslaw Lapkowski. "Editorial: Special Issue on Electrochemistry of Organic Conductors and Semiconductors." Synthetic Metals 249 (March 2019): 90. http://dx.doi.org/10.1016/j.synthmet.2019.02.012.

Full text
APA, Harvard, Vancouver, ISO, and other styles
14

Buckley, D. Noel. "(Europe Section Heinz Gerischer Award) The Long Reach of Electrochemistry: Semiconductors, Metallization and Energy Storage." ECS Meeting Abstracts MA2022-02, no. 30 (October 9, 2022): 1090. http://dx.doi.org/10.1149/ma2022-02301090mtgabs.

Full text
Abstract:
This talk will attempt to illustrate the long reach of electrochemistry by briefly reviewing our work in a number of different areas including oxygen electrochemistry of platinum metals, various aspects of compound semiconductors and their electrochemistry, electrodeposition of copper metallization and electrochemical kinetics of vanadium redox reactions. The discussion will briefly touch on early work on oxygen evolution on ruthenium and iridium and electrochromism in anodic iridium oxides.1-3 Compound semiconductors will be discussed in a number of aspects from epitaxial crystal growth to electrochemistry. Specific topics will include chemical vapor deposition technology4,5 and electrochemistry at the semiconductor-solution interface including film growth6, oscillatory reactions7 and pore formation on indium phosphide8,9 and photoelectrochemical etching of gallium nitride.10 Aspects of electrodeposited copper metallization will be discussed including in-situ stress measurements and in-situ atomic force microscopy during deposition11 and spontaneous morphology changes during room-temperature aging12. Electrochemical kinetics of vanadium redox reactions on carbon electrodes13 will be discussed as well as other aspects of vanadium flow batteries.14,15 References D. N. Buckley, L. D. Burke, “Lowering of Overvoltage for Oxygen Evolution at Noble Metal Electrodes in the Presence of Ruthenium Salts”, J. Electroanal. Chem. 52, 433 (1974). D. N. Buckley, L. D. Burke, “Oxygen Evolution and Corrosion at Iridium Anodes”, J. Chem. Soc. Faraday Trans. 1, 72, 2431 (1976). D. N. Buckley, L. D. Burke, “Enhancement of Charge Capacity of an Iridium Surface in the Anodic Region”, J. Chem. Soc. Faraday Trans. 1, 71, 1447 (1975). D. N. Buckley, J. R. C. Filipe, F. R. Lineman, K. W. Wang, K. M. Lee, A. A. Westphal, S. M. McEwan and M. A. DiGiuseppe, “Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and their Physical and Chemical Origins,” J. Electrochem. Soc., 139, 1185 (1992). D. N. Buckley C. W. Seabury, J. L. Valdes, G. Cadet, J. W. Mitchell, M. A. DiGiuseppe, R. C. Smith, J. R. C. Filipe, R. B. Bylsma, U. K. Chakrabarti and K. W. Wang, “Growth of InGaAs Structures using In Situ Electrochemically Generated Arsine”, Appl. Phys. Lett. 57, 1684 (1990). D. N. Buckley, E. Harveyand S. N. G. Chu, “Growth of Anodic Films on Compound Semiconductor Electrodes: InP in Aqueous (NH4)2S”, Monatshefte fur Chemie , 133, 785 (2002) E. Harvey, D. N. Buckley, and S. N. G. Chu, “Oscillatory Behavior during the Anodization of InP”, Electrochem. Solid State Lett, 5 , G22 (2002) C. O'Dwyer, D. Sutton, M. Serantoni, S. B. Newcomb and D. N. Buckley, "An Investigation by AFM and TEM of the Mechanism of Anodic Formation of Nanoporosity in n-InP in KOH", J. Electrochem. Soc. 154, H78-H85 (2007). Robert P. Lynch, Nathan Quill, Colm O’Dwyer, Shohei Nakahara and D. Noel Buckley, "Propagation of Nanopores during Anodic Etching of n-InP in KOH," Phys. Chem. Chem. Phys., 15, 15135-15145 (2013). C. Heffernan, R. P. Lynch and D. N. Buckley, “A Study of the Photoelectrochemical Etching of n-GaN in H3PO4 and KOH Electrolytes”, ECS Journal of Solid State Science and Technology, 9, 015003 (2020). S. Ahmed, T. T. Ahmed, M. O’Grady, S. Nakahara and D. N. Buckley, "Investigation of Stress and Morphology in Electrodeposited Copper Nanofilms by Cantilever Beam Method and In-Situ Electrochemical Atomic Force Microscopy," J. Appl. Phys. 103, 073506 (2008). S. Ahmed, D. N. Buckley, S. Nakahara, T. T. Ahmed, and Y. Kuo, "An Isothermal Annealing Study of Spontaneous Morphology Change in Electrodeposited Copper Metallization," J. Electrochem. Soc., 154, D103 (2007). A. Bourke, M. A. Miller, R. P. Lynch, X. Gao, J. Landon, J. S. Wainright, R. F. Savinell, and D. N. Buckley, “Electrode Kinetics of Vanadium Flow Batteries: Contrasting Responses of VII-VIII and VIV-VV to Electrochemical Pretreatment”, J. Electrochem. Soc., 163(1), A5097-A5105 (2016); doi:10.1149/2.0131601jes C. Petchsingh, N. Quill, J. T. Joyce, D. Ní Eidhin, D. Oboroceanu, C. Lenihan, X. Gao, R. P. Lynch, and D. N. Buckley, “Spectroscopic Measurement of State of Charge in Vanadium Flow Batteries with an Analytical Model of VIV-VV Absorbance” J. Electrochem. Soc. 163, A5068-A5083 (2016) doi:10.1149/2.0091601jes. D. N. Buckley, D. Oboroceanu, N Quill, C. Lenihan1 and R. P. Lynch, “Modelling and Accelerated Testing of Catholyte Stability in Vanadium Flow Batteries,” J. Electrochem. Soc., 168, 030530 (2021). Figure 1
APA, Harvard, Vancouver, ISO, and other styles
15

Chung, Yonghwa, and Chi-Woo Lee. "Electrochemically Fabricated Alloys and Semiconductors Containing Indium." Journal of Electrochemical Science and Technology 3, no. 3 (September 30, 2012): 95–115. http://dx.doi.org/10.33961/jecst.2012.3.3.95.

Full text
APA, Harvard, Vancouver, ISO, and other styles
16

Albery, W. J., P. N. Bartlett, and C. P. Wilde. "Modulated Light Studies of the Electrochemistry of Semiconductors: Theory and Experiment." Journal of The Electrochemical Society 134, no. 10 (October 1, 1987): 2486–91. http://dx.doi.org/10.1149/1.2100227.

Full text
APA, Harvard, Vancouver, ISO, and other styles
17

Shi, Jianjian, Xunhua Zhao, Zhiguo Wang, and Yuanyue Liu. "Eliminating Trap‐States and Functionalizing Vacancies in 2D Semiconductors by Electrochemistry." Small 15, no. 47 (October 22, 2019): 1901899. http://dx.doi.org/10.1002/smll.201901899.

Full text
APA, Harvard, Vancouver, ISO, and other styles
18

Morozova, M. V., E. S. Buyanova, S. A. Petrova, V. V. Khisametdinova, Yu V. Emel’yanova, A. N. Shatokhina, and V. M. Zhukovskii. "Structural and thermal stability of BIMEVOX oxygen semiconductors." Russian Journal of Electrochemistry 47, no. 4 (April 2011): 448–52. http://dx.doi.org/10.1134/s1023193511040100.

Full text
APA, Harvard, Vancouver, ISO, and other styles
19

Fregnaux, Mathieu, Muriel Bouttemy, Damien Aureau, Solene Bechu, Arnaud Etcheberry, and Anne-Marie Goncalves. "(Invited, Digital Presentation) Outstanding Contributions of Liquid Ammonia on III-V Semiconductors (Photo)-Electrochemistry." ECS Meeting Abstracts MA2022-02, no. 30 (October 9, 2022): 1091. http://dx.doi.org/10.1149/ma2022-02301091mtgabs.

Full text
Abstract:
The control of the surface or interface chemistry is a key step for new industrial products with high added value. This is critical in the case of III-Vs for which it is still difficult to reach the exceptional performances that are predicted by the III-V’s physic. The III-V MOS have been singled out to be a future technology after silicon CMOS. However, the major difficulty lies in the surface or interface chemistry that is hardly controlled and often uncertain. So far, the surface engineering of III-Vs has not met the quality needed for high performances[1]. Thus for III-Vs like InP and related compounds, dry or wet treatments have been and still are explored. This research takes advantage of the remarkable properties of phosphazene (flexibility of the inorganic backbone, chemical stability...) to passivate III-V semiconductor surfaces. The strength and novelty are based on our capability to develop a polyphosphazene network controlled at the nanometric scale with good anchoring to the III-V lattice[2]. This research concerns a fine-tuning of the surface at the nanometric scale allowing their potential use in III-V micro (opto)electronic. The tuning is based on a completely novel III-V surface chemistry inspired by the polyphosphazenes structures[3]. The innovation lies in a totally different (photo-electro)chemical engineering than the ones commonly used on III-Vs. Innovation also concerns the use of liquid ammonia (NH3 Liq.) as a solvent, it allows specific chemical processes on III-Vs, sheltered from water interaction, opening original routes for III-V surface treatment and advanced device fabrication processes. The use of NH3 Liq. is singular for the electronic industry but it is a classical industrial solvent and we claim that introduction of this novelty in the (opto)electronic industry would not be a limiting factor. Indeed NH3 Liq. as an efficient non-aqueous solvent provides ideal conditions for the treatment of semiconductor surface: the high purity (electronic grade quality) and the exclusion of residual active water molecules from the surface. This point is crucial since the formation of unsuitable oxide on the surface during the passivation process at the interface SC/liquid is therefore efficiently excluded. Often the uncontrolled development of superficial oxide seriously hampers the integration of III-Vs in the MOS sectors. In the case of InP semiconductors (for both types), our preliminary results have shown by XPS the electrochemical successful formation of a stable passivating “polyphosphazene like” ultra-thin film obtained by (photo)-electrochemistry in NH3 Liq. (Fig. 1 and 2). Using the phosphorus outers atoms of the InP lattice. As a consequence, the development of well-ordered polyphosphazene of surfaces is unique and very challenging. This research can offer appropriate surface structure design on passivated III-Vs. With this goal in mind, our preliminary results are promising. Indeed, ILV’s expertise in III-V treatments NH3 Liq. provides the formation of stable polyphosphazene on InP and GaP (Fig.3)[4]. Acknowledgements Continuation of this work will be supported by the French National Research Agency (ANR). [1] S.R. Morrisson, Electrochemistry at Semiconductor and Oxidized Metal Electrodes, Plenum Press, New York (1980). [2] A-M. Gonçalves, N. Mézailles, C. Mathieu, P. Le Floch, A. Etcheberry, Chem. Mat,. 22, (2010) 3114-3120. [3] H. R. Allcock, in Chemistry and Application of polyphosphazenes, (Eds: A. Willey and Sons), Willey-Interscience, USA (2003). [4] A-M Gonçalves, C. Njel, D. Aureau, A. Etcheberry. Appl Surf Sci 391 (2016) 44-48. Figure 1
APA, Harvard, Vancouver, ISO, and other styles
20

Estreicher, Stefan K. "Theory of Defects in Semiconductors: Recent Developments and Challenges." Electrochemical Society Interface 14, no. 1 (March 1, 2005): 28–31. http://dx.doi.org/10.1149/2.f06051if.

Full text
APA, Harvard, Vancouver, ISO, and other styles
21

Föll, Helmut, Jürgen Carstensen, and Eugen Foca. "Self-induced oscillations in Si and other semiconductors." International Journal of Materials Research 97, no. 7 (July 1, 2006): 1016–25. http://dx.doi.org/10.1515/ijmr-2006-0160.

Full text
Abstract:
Abstract Some metals share an elusive property with silicon (and other semiconductors): they may exhibit strong self-induced current oscillations during anodic dissolution in electrochemical experiments. While this feature, as well as related features concerning self-organization at reactive solid-liquid interfaces, is still not well understood, the so-called “current-burst model” of the authors succeeded in reproducing many effects quantitatively that have been observed at the Si electrode. The current-burst model assumes that current flow through the electrode on a nm scale is inhomogeneous in both time and space; a single current-burst is a stochastic event. Current oscillations in time and space result from interactions in space or time of single current-bursts. The paper outlines the basics of the model and gives results of Monte Carlo simulations concerning stable and damped oscillations for the current and, as a new feature, for the voltage. With the current-burst model a kind of “nano”-electrochemistry is introduced; its strengths, weaknesses, and possible implications for other electrochemical phenomena and for other materials are briefly discussed.
APA, Harvard, Vancouver, ISO, and other styles
22

Allongue, P., and E. Souteyrand. "Metal electrodeposition on semiconductors." Journal of Electroanalytical Chemistry 362, no. 1-2 (December 1993): 79–87. http://dx.doi.org/10.1016/0022-0728(93)80008-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
23

Seitz, O., C. Mathieu, A. M. Gon;çalves, M. Herlem, and A. Etcheberry. "Anodic Behavior of III-V Semiconductors in Liquid Ammonia (223 K)." Portugaliae Electrochimica Acta 20, no. 4 (2002): 191–97. http://dx.doi.org/10.4152/pea.200204191.

Full text
APA, Harvard, Vancouver, ISO, and other styles
24

Buckley, D. Noel. "(Europe Section Heinz Gerischer Award) The Long Reach of Electrochemistry: Semiconductors, Metallization and Energy Storage." ECS Transactions 109, no. 3 (September 30, 2022): 3–29. http://dx.doi.org/10.1149/10903.0003ecst.

Full text
Abstract:
Research in several different areas over the past half-century is briefly reviewed with some discussion on the evolution of equipment and techniques. Examples from our work on oxygen evolution on ruthenium and iridium and electrochromism in anodic iridium oxides in the 1970s and on lithium batteries in the 1980s are discussed. Topics in the science and technology of compound semiconductors range from epitaxial crystal growth to electrochemistry and nanopore formation. Some results are presented on electrodeposition of copper metallization including in-situ stress measurements and atomic force microscopy during deposition, and spontaneous morphology changes during room-temperature aging. Electrochemical kinetics of vanadium redox reactions on carbon electrodes is discussed as well as state-of-charge monitoring and thermal stability of the positive electrode in vanadium flow batteries.
APA, Harvard, Vancouver, ISO, and other styles
25

Hamnett, A., J. Gilman, and R. A. Batchelor. "Theory of electroreflectance and photoreflectance of semiconductors." Electrochimica Acta 37, no. 5 (April 1992): 949–56. http://dx.doi.org/10.1016/0013-4686(92)85046-n.

Full text
APA, Harvard, Vancouver, ISO, and other styles
26

Bizzarri, Bruno Mattia, Angelica Fanelli, Lorenzo Botta, Claudio Zippilli, Silvia Cesarini, and Raffaele Saladino. "Dendrimeric Structures in the Synthesis of Fine Chemicals." Materials 14, no. 18 (September 15, 2021): 5318. http://dx.doi.org/10.3390/ma14185318.

Full text
Abstract:
Dendrimers are highly branched structures with a defined shape, dimension, and molecular weight. They consist of three major components: the central core, branches, and terminal groups. In recent years, dendrimers have received great attention in medicinal chemistry, diagnostic field, science of materials, electrochemistry, and catalysis. In addition, they are largely applied for the functionalization of biocompatible semiconductors, in gene transfection processes, as well as in the preparation of nano-devices, including heterogeneous catalysts. Here, we describe recent advances in the design and application of dendrimers in catalytic organic and inorganic processes, sustainable and low environmental impact, photosensitive materials, nano-delivery systems, and antiviral agents’ dendrimers.
APA, Harvard, Vancouver, ISO, and other styles
27

Schiavello, Mario. "Some working principles of heterogeneous photocatalysis by semiconductors." Electrochimica Acta 38, no. 1 (January 1993): 11–14. http://dx.doi.org/10.1016/0013-4686(93)80004-j.

Full text
APA, Harvard, Vancouver, ISO, and other styles
28

Yen, Yin-Cheng, Chia-Chi Lin, Ping-Yu Chen, Wen-Yin Ko, Tzu-Rung Tien, and Kuan-Jiuh Lin. "Green synthesis of carbon quantum dots embedded onto titanium dioxide nanowires for enhancing photocurrent." Royal Society Open Science 4, no. 5 (May 2017): 161051. http://dx.doi.org/10.1098/rsos.161051.

Full text
Abstract:
The green synthesis of nanowired photocatalyst composed of carbon quantum dots-titanium hybrid-semiconductors, CQDs/TiO 2 , are reported. Where graphite-based CQDs with a size less than 5 nm are directly synthesized in pure water electrolyte by a one-step electrochemistry approach and subsequently electrodeposited onto as-prepared TiO 2 nanowires through a voltage-driven reduction process. Electron paramagnetic resonance studies show that the CQDs can generate singlet oxygen and/or oxygen radicals to decompose the kinetic H 2 O 2 intermediate species upon UV light illumination. With the effect of peroxidase-like CQDs, photocurrent density of CQDs/TiO 2 is remarkably enhanced by a 6.4 factor when compared with that of as-prepared TiO 2 .
APA, Harvard, Vancouver, ISO, and other styles
29

Charlier, J., E. Clolus, C. Bureau, and S. Palacin. "Localized organic grafting on photosensitive semiconductors substrates." Journal of Electroanalytical Chemistry 622, no. 2 (October 2008): 238–41. http://dx.doi.org/10.1016/j.jelechem.2008.06.007.

Full text
APA, Harvard, Vancouver, ISO, and other styles
30

Fukuma, Takeshi. "INVITED PAPER: Instrumentation and Biological Applications of High-Resolution Frequency Modulation Atomic Force Microscopy in Liquid." Journal of Nano Research 4 (January 2009): 1–10. http://dx.doi.org/10.4028/www.scientific.net/jnanor.4.1.

Full text
Abstract:
Frequency modulation atomic force microscopy (FM-AFM) has been a powerful tool for imaging atomic-scale structures and properties of various materials including metals, semiconductors, metal oxides, alkali halides and organic systems. Whilst the method has been used mainly in ultrahigh vacuum environments, recent progress in FM-AFM instrumentation made it possible to apply this technique also to investigations in liquid. This technological innovation opened up a variety of applications of FM-AFM in biology and electrochemistry. To date, the improved FM-AFM instrument and technique have been applied to investigations of several biological materials, providing novel information that has not been accessible with other imaging techniques. In this review, I will summarize the recent progress in FM-AFM instrumentation and biological applications in liquid.
APA, Harvard, Vancouver, ISO, and other styles
31

Davydov, A. D., and V. M. Volgin. "Electrochemical Local Maskless Micro/Nanoscale Deposition, Dissolution, and Oxidation of Metals and Semiconductors (A Review)." Russian Journal of Electrochemistry 56, no. 1 (January 2020): 52–81. http://dx.doi.org/10.1134/s1023193520010036.

Full text
APA, Harvard, Vancouver, ISO, and other styles
32

Obeng, Y., and P. Srinivasan. "Graphene: Is It the Future for Semiconductors? An Overview of the Material, Devices, and Applications." Interface magazine 20, no. 1 (January 1, 2011): 47–52. http://dx.doi.org/10.1149/2.f05111if.

Full text
APA, Harvard, Vancouver, ISO, and other styles
33

Dimitrova, Rozalina, Lionel Catalan, Dimiter Alexandrov, and Aicheng Chen. "Evaluation of GaN and In0.2Ga0.8N Semiconductors as Potentiometric Anion Selective Electrodes." Electroanalysis 19, no. 17 (September 2007): 1799–806. http://dx.doi.org/10.1002/elan.200703936.

Full text
APA, Harvard, Vancouver, ISO, and other styles
34

Nötzel, Richard. "InN/InGaN quantum dot electrochemical devices: new solutions for energy and health." National Science Review 4, no. 2 (January 7, 2017): 184–95. http://dx.doi.org/10.1093/nsr/nww101.

Full text
Abstract:
AbstractA review is given of the exceptional electrochemical performance of epitaxial InN/InGaN quantum dots (QDs) as photoelectrodes for solar hydrogen generation by water splitting, as biosensor transducers and as anion-selective electrodes, and they are also evaluated as supercapacitor electrodes. The performance is benchmarked against the best performances of other reported materials and nanostructures. A model based on the unique interplay of surface and quantum properties is put forward to understand the boost of catalytic activity and anion selectivity interlinking quantum nanostructure physics with electrochemistry and catalysis. Of equal impact is the direct growth on cheap Si substrates without any buffer layers, allowing novel device designs and integration with Si technology. This makes the InN/InGaN QDs viable, opening up new application fields for III-nitride semiconductors.
APA, Harvard, Vancouver, ISO, and other styles
35

Mann, Olivier, Ge-Bo Pan, and Werner Freyland. "Nanoscale electrodeposition of metals and compound semiconductors from ionic liquids." Electrochimica Acta 54, no. 9 (March 2009): 2487–90. http://dx.doi.org/10.1016/j.electacta.2008.02.090.

Full text
APA, Harvard, Vancouver, ISO, and other styles
36

Bystrenova, Eva, Marta Jelitai, Ilaria Tonazzini, Adina N. Lazar, Martin Huth, Pablo Stoliar, Chiara Dionigi, et al. "Neural Networks Grown on Organic Semiconductors." Advanced Functional Materials 18, no. 12 (June 12, 2008): 1751–56. http://dx.doi.org/10.1002/adfm.200701350.

Full text
APA, Harvard, Vancouver, ISO, and other styles
37

Janata, Jiri, and Mira Josowicz. "Organic semiconductors in potentiometric gas sensors." Journal of Solid State Electrochemistry 13, no. 1 (June 24, 2008): 41–49. http://dx.doi.org/10.1007/s10008-008-0597-0.

Full text
APA, Harvard, Vancouver, ISO, and other styles
38

Wu, Pei-Tzu, Felix S. Kim, Richard D. Champion, and Samson A. Jenekhe. "Conjugated Donor−Acceptor Copolymer Semiconductors. Synthesis, Optical Properties, Electrochemistry, and Field-Effect Carrier Mobility of Pyridopyrazine-Based Copolymers." Macromolecules 41, no. 19 (October 14, 2008): 7021–28. http://dx.doi.org/10.1021/ma801348b.

Full text
APA, Harvard, Vancouver, ISO, and other styles
39

Her, Jim-Long, Chao-Wen Lin, Kung-Yuan Chang, and Tung-Ming Pan. "Label-Free Detection of Creatinine Using a Disposable Poly-N-Isopropylacrylamide as an Encapsulating Creatinine Deiminase Based Eu2Ti2O7 Electrolyte-Insulator-Semiconductors." International Journal of Electrochemical Science 7, no. 1 (January 2012): 387–404. http://dx.doi.org/10.1016/s1452-3981(23)13347-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
40

Tsu, R. "Inverse Nottingham Effect Cooling in Semiconductors." Electrochemical and Solid-State Letters 2, no. 12 (1999): 645. http://dx.doi.org/10.1149/1.1390935.

Full text
APA, Harvard, Vancouver, ISO, and other styles
41

Yang, Tung-Han, Kuan-Chang Chiu, Yeu-Wei Harn, Han-Yi Chen, Ren-Fong Cai, Jing-Jong Shyue, Shen-Chuan Lo, Jenn-Ming Wu, and Yi-Hsien Lee. "Electron Field Emission of Geometrically Modulated Monolayer Semiconductors." Advanced Functional Materials 28, no. 7 (December 18, 2017): 1706113. http://dx.doi.org/10.1002/adfm.201706113.

Full text
APA, Harvard, Vancouver, ISO, and other styles
42

Spitler, Mark T. "One dimensional onsager model for dye sensitized charge injection into semiconductors." Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 228, no. 1-2 (August 1987): 69–76. http://dx.doi.org/10.1016/0022-0728(87)80097-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
43

del Barrio, Melisa, Moumita Rana, Juan José Vilatela, Encarnación Lorenzo, Antonio L. De Lacey, and Marcos Pita. "Photoelectrocatalytic detection of NADH on n-type silicon semiconductors facilitated by carbon nanotube fibers." Electrochimica Acta 377 (May 2021): 138071. http://dx.doi.org/10.1016/j.electacta.2021.138071.

Full text
APA, Harvard, Vancouver, ISO, and other styles
44

Gandhi, Navdeep Singh, Rajdeep Dhar, Fiheon Imroze, Mithun Chennamkulam Ajith, Prashanth Kumar Manda, and Soumya Dutta. "Investigation of the Intrinsic Nature of Organic Semiconductors Using a Metal Contact-Induced Capacitance Study in Organic Metal–Insulator–Semiconductor Capacitors." ACS Applied Electronic Materials 3, no. 12 (November 18, 2021): 5219–25. http://dx.doi.org/10.1021/acsaelm.1c00671.

Full text
APA, Harvard, Vancouver, ISO, and other styles
45

Maryam, A., M. N. Rasheed, M. Asghar, K. Fatima, M. Afzal, F. Iqbal, S. A. Rouf, M. Syväjärvi, and B. Zhu. "Preparation and application of LiSiC-oxide for low temperature solid oxide fuel cells." Digest Journal of Nanomaterials and Biostructures 16, no. 2 (2021): 501–8. http://dx.doi.org/10.15251/djnb.2021.162.501.

Full text
Abstract:
Semiconductors are well known as excellent materials in the field of exploring novel avenues which combine various fields in electronics, electrochemistry, etc for new functional device concepts. Lithium silicon carbide (LiSiC) is a well-known electrode material for Lithium ion batteries but relatively new for solid oxide fuel cells (SOFCs) and electrolyte-layer free fuel cells (EFFCs). In the present work, we have explored three categories of fuel cells based on mixed LiSiC-SDC (samarium doped ceria) in SOFC and LiSiC as a single component material with type (I) and without coating of a layer of 3CSiC as EFFC type (II). All of three cells are sandwiched between Ni foams coated with NCAL (Ni0.8Co0.15Al0.05Li-oxide). The electrochemical performances of as prepared fuel cells are tested at 550°C, which is substantially lower than in conventional fuel cell materials. The LiSiC based EFFC type (II) demonstrates better performance because of less ohmic resistance as compared to type (I) have more layers. This indicates that the LiSiC-SDC system has potential for fuel cell development in accordance with energy band structure and alignment.
APA, Harvard, Vancouver, ISO, and other styles
46

Frei, Heinz, Donald J. Fitzmaurice, and Michael Graetzel. "Surface chelation of semiconductors and interfacial electron transfer." Langmuir 6, no. 1 (January 1990): 198–206. http://dx.doi.org/10.1021/la00091a032.

Full text
APA, Harvard, Vancouver, ISO, and other styles
47

Fahrner, W. R., St Löffler, E. Klausmann, and H. C. Neitzert. "Determination of Generation Lifetime in Trap‐Rich and Layered Semiconductors by Metal‐Oxide‐ Semiconductor Measurements." Journal of The Electrochemical Society 141, no. 8 (August 1, 1994): 2151–56. http://dx.doi.org/10.1149/1.2055077.

Full text
APA, Harvard, Vancouver, ISO, and other styles
48

Jadwiszczak, Jakub, Daniel J. Kelly, Junqing Guo, Yangbo Zhou, and Hongzhou Zhang. "Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications." ACS Applied Electronic Materials 3, no. 4 (April 7, 2021): 1505–29. http://dx.doi.org/10.1021/acsaelm.0c00901.

Full text
APA, Harvard, Vancouver, ISO, and other styles
49

Black, Alexander W., Wenjian Zhang, Yasir J. Noori, Gillian Reid, and Philip N. Bartlett. "Temperature effects on the electrodeposition of semiconductors from a weakly coordinating solvent." Journal of Electroanalytical Chemistry 944 (September 2023): 117638. http://dx.doi.org/10.1016/j.jelechem.2023.117638.

Full text
APA, Harvard, Vancouver, ISO, and other styles
50

Kwak, Donghoon, Jung Ah Lim, Boseok Kang, Wi Hyoung Lee, and Kilwon Cho. "Organic Semiconductors: Self-Organization of Inkjet-Printed Organic Semiconductor Films Prepared in Inkjet-Etched Microwells (Adv. Funct. Mater. 42/2013)." Advanced Functional Materials 23, no. 42 (November 13, 2013): 5217. http://dx.doi.org/10.1002/adfm.201370214.

Full text
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography