Relevant bibliographies by topics / Semiconductors : Etching : Plasma etching

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Semiconductors : Etching : Plasma etching'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 February 2022

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Journal articles on the topic "Semiconductors : Etching : Plasma etching"

1

PEARTON, S. J. "REACTIVE ION ETCHING OF III–V SEMICONDUCTORS." International Journal of Modern Physics B 08, no. 14 (1994): 1781–876. http://dx.doi.org/10.1142/s0217979294000762.

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Anisotropic dry etching by a number of different techniques is widely employed in III–V compound semiconductor technology for pattern transfer, device isolation, mesa formation, grating fabrication and via hole etching. In this paper we review the different dry etching techniques, the plasma chemistries employed for III–V materials and electrical and optical changes to the near-surface of the etched sample. We give examples of the use of dry etching in fabrication of heterojunction bipolar transistors, field effect transistors and various types of semiconductor lasers. Particular attention is
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2

Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.

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The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and pla
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3

Lee, J. W. "IC1 plasma etching of III–V semiconductors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 15, no. 3 (1997): 652. http://dx.doi.org/10.1116/1.589308.

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Shul, R. J., G. B. McClellan, R. D. Briggs, et al. "High-density plasma etching of compound semiconductors." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15, no. 3 (1997): 633–37. http://dx.doi.org/10.1116/1.580696.

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Madziwa-Nussinov, Tsitsi G., Donald Arnush, and Francis F. Chen. "Ion orbits in plasma etching of semiconductors." Physics of Plasmas 15, no. 1 (2008): 013503. http://dx.doi.org/10.1063/1.2819681.

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VOSHCHENKOV, ALEXANDER M. "FUNDAMENTALS OF PLASMA ETCHING FOR SILICON TECHNOLOGY (PART 1)." International Journal of High Speed Electronics and Systems 01, no. 03n04 (1990): 303–45. http://dx.doi.org/10.1142/s0129156490000149.

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Over the past decade, as the rapid evolution of semiconductor technology has progressed towards submicron design rules, plasma (dry) etching has supplanted simple wet etching processes for the transfer of patterns. To understand the underlying need for development of plasma etching, a brief background of integrated semiconductor technology is presented. Along with a historical perspective of the evolution of plasma etching, the relationship of plasma etching to lithography needs, its basic characteristics and advantages over wet chemical processing are discussed. Following this, relevant conce
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7

Kawasaki, Ryohei, Kenta Irikura, Hitoshi Habuka, Yoshinao Takahashi, and Tomohisa Kato. "Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer." Materials Science Forum 1004 (July 2020): 167–72. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.167.

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For improving the productivity of the semiconductor silicon carbide power devices, a very large diameter wafer process was studied, particularly for the non-plasma wafer etching using the chlorine trifluoride gas. Taking into account the motion of heavy gas, such as the chlorine trifluoride gas having the large molecular weight, the transport phenomena in the etching reactor were evaluated and designed using the computational fluid dynamics. The simple gas distributor design for a 200-mm-diameter wafer was evaluated in detail in order to uniformly spread the etchant gas over the wide wafer sur
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8

L Hitchman, Michael. "Plasma etching in semiconductor fabrication." Vacuum 36, no. 5 (1986): 293. http://dx.doi.org/10.1016/0042-207x(86)90610-x.

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Pearton, Stephen J., Erica A. Douglas, Randy J. Shul, and Fan Ren. "Plasma etching of wide bandgap and ultrawide bandgap semiconductors." Journal of Vacuum Science & Technology A 38, no. 2 (2020): 020802. http://dx.doi.org/10.1116/1.5131343.

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10

Reksten, Grace M., W. Holber, and R. M. Osgood. "Wavelength dependence of laser enhanced plasma etching of semiconductors." Applied Physics Letters 48, no. 8 (1986): 551–53. http://dx.doi.org/10.1063/1.96504.

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Dissertations / Theses on the topic "Semiconductors : Etching : Plasma etching"

1

Parks, Joseph Worthy Jr. "Microscopic numerical analysis of semiconductor devices with application to avalnache photodiodes." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/13539.

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Baker, Michael Douglas. "In-situ monitoring of reactive ion etching." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15352.

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Toogood, Matthew John. "Studies of the chemistry of plasmas used for semiconductor etching." Thesis, University of Oxford, 1991. http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39.

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Optical diagnostic techniques have been developed and then used to investigate the chemistry of reactive species formed in CF<sub>4</sub> / O<sub>2</sub> rf parallel plate discharges, similar to those employed in semiconductor material processing. Oxygen atoms were detected by two photon laser induced fluorescence (LIF), and the technique was found to have a number of experimental caveats owing mainly to the high laser intensities required. In particular, amplified spontaneous emission (ASE), was observed from laser excitation of oxygen, and was found to influence the spontaneous fluorescence
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4

Smith, Scott Alan. "INDUCTIVELY COUPLED PLASMA ETCHING OF III-N SEMICONDUCTORS." NCSU, 2002. http://www.lib.ncsu.edu/theses/available/etd-05082002-162142/.

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The principal focus of this research was the employment of an in-house designed and constructed inductively coupled plasma (ICP) system for integrated studies pertaining to the etching rates and etching selectivity among AlN, GaN, and Al(x)Ga(1-x)N. An (ICP) system was chosen because of its high plasma density and low cost relative to other high-density plasma etching systems. The etch rates were studied as a function of ICP power, pressure, DC bias, and gas composition. The use of a mixture of 2 sccm BCl3 and 18 sccm Cl2 resulted in a maximum etch rate of 2.2 microns/min for GaN as well as ne
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Steiner, Pinckney Alston IV. "Anisotropic low-energy electron-enhanced etching of semiconductors in DC plasma." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/27060.

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Krautschik, Christof Gabriel 1957. "Impedance determination of a RF plasma discharge by external measurements." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277141.

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The equivalent impedance of a RF plasma was experimentally determined by monitoring the voltage and current waveform for different input powers in real time. Average ion energies and fluxes were determined by a computer model which takes ion collisions in the sheath regions into account. In addition two models were proposed which explain how RF energy is converted to DC potential energy in the sheath. Etch rates of Si in a CF₄ discharge were also evaluated and related to the measurements.
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Vas̆eková, Eva. "Spectroscopic studies of etching gases and microwave diagnostics of plasmas related to the semiconductor industry." n.p, 2006. http://physics.open.ac.uk/~ev295/!MASTER_THESIS.pdf.

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Fagan, James G. "Reactive ion etching of polymide films using a radio frequency discharge /." Online version of thesis, 1987. http://hdl.handle.net/1850/10284.

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Zhu, Hongbin. "Control of Plasma Etching of Semiconductor Surfaces." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1354%5F1%5Fm.pdf&type=application/pdf.

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Carter, A. J. "The plasma etching of III-V semiconductor materials." Thesis, Cardiff University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305164.

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Books on the topic "Semiconductors : Etching : Plasma etching"

1

Morgan, Russ A. Plasma etching in semiconductor fabrication. Elsevier, 1985.

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2

Plasma etching in semiconductor fabrication. Elsevier, 1985.

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3

Sugawara, M. Plasma etching: Fundamentals and applications. Oxford University Press, 1998.

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4

NATO Advanced Study Institute on Plasma Processing of Semiconductors (1996 Bonas, France). Plasma processing of semiconductors. Kluwer Academic Publishers, 1997.

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Plasma processes for semiconductor fabrication. Cambridge University Press, 1999.

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6

Symposium on Plasma Processing (13th 2000 Toronto, Ont.). Plasma processing XIII: Proceedings of the International Symposium. Edited by Mathad G. S, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Electrochemical Society., 2000.

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Symposium, on Plasma Processing (5th 1984 New Orleans La ). Proceedings of the Fifth Symposium on Plasma Processing. Dielectrics and Insulation and Electronics Divisions, Electrochemical Society, 1985.

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International Symposium on Plasma Processing (14th 2002 Philadelphia, Pa.). Plasma processing XIV: Proceedings of the International Symposium. Edited by Mathad G. S, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Electrochemical Society, 2002.

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9

Symposium on Highly Selective Dry Etching and Damage Control (1993 Honolulu, Hawaii). Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control. Electrochemical Society, 1993.

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10

Roosmalen, A. J. van. Dry etching for VLSI. Plenum Press, 1991.

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Book chapters on the topic "Semiconductors : Etching : Plasma etching"

1

Mantei, T. D. "Introduction to Plasma Etching." In Plasma Processing of Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_1.

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2

d’Agostino, Riccardo, and Francesco Fracassi. "Plasma Etching Processes." In Crucial Issues in Semiconductor Materials and Processing Technologies. Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_27.

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3

Donnelly, V. M., N. Layadi, J. T. C. Lee, I. P. Herman, K. V. Guinn, and C. C. Cheng. "Cl2 Plasma — Si Surface Interactions in Plasma Etching: X-ray Photoelectron Spectroscopy After Etching, and Optical and Mass Spectrometry Methods During Etching." In Plasma Processing of Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_14.

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Mantei, T. D. "High Density Sources for Plasma Etching." In Plasma Processing of Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_8.

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Vawter, G. A. "Ion Beam Etching of Compound Semiconductors." In Handbook of Advanced Plasma Processing Techniques. Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-642-56989-0_12.

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Oehrlein, G. S. "SiO2 Etching in High-Density Plasmas: Differences with Low-Density Plasmas." In Plasma Processing of Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_4.

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Coburn, J. W. "Surface Science Aspects of Etching and Wall Reactions in High Density Plasmas." In Plasma Processing of Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_12.

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Coburn, J. W. "The Role of Ions in Reactive Ion Etching with Low Density Plasmas." In Plasma Processing of Semiconductors. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5884-8_3.

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Seethalakshmi, I., Rashmi Joshi, Nandita Das Gupta, and Bijoy Krishna Das. "Inductively Coupled Plasma Etching of GaAs with High Anisotropy for Photonics Applications." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_175.

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Bauer, S., I. Wolff, N. Werner, et al. "Toxicological Investigations of Waste Products from the Plasma Etching Process in the Semiconductor Industry." In Archives of Toxicology. Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-74936-0_65.

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Conference papers on the topic "Semiconductors : Etching : Plasma etching"

1

Abraham-Shrauner, B., and C. D. Wang. "Neutral etching and shadowing in trench etching of semiconductors." In International Conference on Plasma Science (papers in summary form only received). IEEE, 1995. http://dx.doi.org/10.1109/plasma.1995.531627.

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Shah, A. P., M. R. Laskar, A. A. Rahman, M. R. Gokhale, and A. Bhattacharya. "Inductively coupled plasma reactive ion etching of III-nitride semiconductors." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791127.

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Shin-ichi Imai. "Virtual metrology for plasma particle in plasma etching equipment." In 2007 International Symposium on Semiconductor Manufacturing. IEEE, 2007. http://dx.doi.org/10.1109/issm.2007.4446835.

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Hu, Evelyn L., and Larry A. Coldren. "Invited Paper Recent Developments In Reactive Plasma Etching Of III-V Compound Semiconductors." In Semiconductor Conferences, edited by Sayan D. Mukherjee. SPIE, 1987. http://dx.doi.org/10.1117/12.941031.

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Zhu, Shenghua, Xingjian Chen, Tom Ni, and Xiaoming He. "Impacts of inorganic fluoride on plasma etching process." In 2016 China Semiconductor Technology International Conference (CSTIC). IEEE, 2016. http://dx.doi.org/10.1109/cstic.2016.7464000.

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Chen, Xingjian, Xiao-Ming He, and Bryan Pu. "Metal contamination control and reduction in plasma etching." In 2016 China Semiconductor Technology International Conference (CSTIC). IEEE, 2016. http://dx.doi.org/10.1109/cstic.2016.7464006.

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Lisovsky, V. A., V. D. Yegorenkov, and V. I. Farenik. "Etching semiconductor materials in low-pressure RF discharge." In International Conference on Plasma Science (papers in summary form only received). IEEE, 1995. http://dx.doi.org/10.1109/plasma.1995.531622.

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Smith, S. A., C. A. Wolden, M. D. Bremser, A. D. Hanser, R. F. Davis, and W. V. Lampert. "Selective and non-selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma." In Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors. IEEE, 1997. http://dx.doi.org/10.1109/iscs.1998.711652.

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Gluck, B., L. Truong, J. Charbonnier, et al. "Plasma etching of ALX 2010 polymer for WLP applications." In 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD). IEEE, 2012. http://dx.doi.org/10.1109/iscdg.2012.6360015.

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Kuboi, Shuichi, Masashi Yamage, and Satoshi Ishikawa. "Investigation of plasma-induced damage in silicon trench etching." In 2016 International Symposium on Semiconductor Manufacturing (ISSM). IEEE, 2016. http://dx.doi.org/10.1109/issm.2016.7934531.

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Reports on the topic "Semiconductors : Etching : Plasma etching"

1

Constantine, C., D. Johnson, and C. Barratt. Parametric study of compound semiconductor etching utilizing inductively coupled plasma source. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/266733.

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Shul, R. J., R. D. Briggs, S. J. Pearton, et al. Chlorine-based plasma etching of GaN. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/432987.

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Gillis, H. P. Kinetics and Mechanisms on the Molecular Beam Etching of Semiconductors. Defense Technical Information Center, 1986. http://dx.doi.org/10.21236/ada171360.

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Greenberg, K. E., P. A. Miller, R. Patteson, and B. K. Smith. Plasma-etching science meets technology in the MDL. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10147051.

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Kolodziejski, Leslie A., and Erich P. Ippen. Advanced Plasma Etching of Complex Combinations of III-V Heterostructures. Defense Technical Information Center, 2008. http://dx.doi.org/10.21236/ada495071.

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Pearton, S. J., C. B. Vartuli, J. W. Lee, et al. Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN. Office of Scientific and Technical Information (OSTI), 1996. http://dx.doi.org/10.2172/212561.

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Economou, Demetre J., and Vincent M. Donnelly. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching. Office of Scientific and Technical Information (OSTI), 2014. http://dx.doi.org/10.2172/1130983.

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Shul, R. J., K. D. Choquette, A. J. Howard, et al. Ultra-smooth dry etching of GaAs using a hydrogen plasma pretreatment. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10115207.

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ASHBY, CAROL I., GREGORY A. VAWTER, WILLIAM G. BREILAND, LARRY A. BRUSKAS, JOSEPH R. WOODWORTH, and GREGORY A. HEBNER. Agile dry etching of compound semiconductors for science-based manufacturing using in-situ process control. Office of Scientific and Technical Information (OSTI), 2000. http://dx.doi.org/10.2172/751581.

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Hareland, W. A., and R. J. Buss. Optical diagnostic instrument for monitoring etch uniformity during plasma etching of polysilicon in a chlorine-helium plasma. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10182286.

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