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Relevant bibliographies by topics / Semiconductors; Gallium Arsenide

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Academic literature on the topic 'Semiconductors; Gallium Arsenide'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Semiconductors; Gallium Arsenide"

1

Brodsky, Marc H. "Progress in Gallium Arsenide Semiconductors." Scientific American 262, no. 2 (1990): 68–75. http://dx.doi.org/10.1038/scientificamerican0290-68.

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Webb, J. D., D. J. Dunlavy, T. Ciszek, et al. "Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer." Applied Spectroscopy 47, no. 11 (1993): 1814–19. http://dx.doi.org/10.1366/0003702934066019.

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This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GaInAsP), copper indium diselenide (CuInSe2), and gallium arsenide-germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in

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3

Kushibiki, Nobuo, Masami Tsukamoto, and Tomoki Erata. "Solid-state high-resoluction NMR studies on gallium arsenide and indium gallium arsenide semiconductors." Chemical Physics Letters 129, no. 3 (1986): 303–5. http://dx.doi.org/10.1016/0009-2614(86)80216-0.

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Shi, Jing, James M. Kikkawa, Roger Proksch, et al. "Assembly of submicrometre ferromagnets in gallium arsenide semiconductors." Nature 377, no. 6551 (1995): 707–10. http://dx.doi.org/10.1038/377707a0.

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Fang, S. F., K. Adomi, S. Iyer, et al. "Gallium arsenide and other compound semiconductors on silicon." Journal of Applied Physics 68, no. 7 (1990): R31—R58. http://dx.doi.org/10.1063/1.346284.

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6

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat

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7

Ryan, John. "Semiconductors: An optical Stark effect observed in gallium arsenide." Nature 324, no. 6095 (1986): 303. http://dx.doi.org/10.1038/324303a0.

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Stern, Michael, Vladimir Umansky, and Israel Bar-Joseph. "Exciton Liquid in Coupled Quantum Wells." Science 343, no. 6166 (2014): 55–57. http://dx.doi.org/10.1126/science.1243409.

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Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in gallium arsenide/aluminum gallium arsenide–coupled quantum wells. Above a critical density and below a critical temperature, the photogenerated electrons and holes separate into two phases: an electron-hole plasma and an exciton liquid, with a clear sharp boundary between them. The two phases are characterized by distinct photoluminescence spectra and by different electrical conductance. The liquid phase is formed by the repulsive interaction between the dipolar excitons

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9

LI, L. "SITE-SPECIFIC SURFACE CHEMISTRY OF GaAs (001)." Surface Review and Letters 07, no. 05n06 (2000): 625–29. http://dx.doi.org/10.1142/s0218625x00000786.

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In this article, we summarize our studies of the surface chemistry of gallium arsenide as it pertains to the metal organic chemical vapor deposition of compound semiconductors. It has been found by scanning tunneling microscopy and vibrational spectroscopy that the adsorption of reactant molecules on reconstruted GaAs (001) surfaces is "site-specific." The adsorption sites on the semiconductor surface are revealed by the vibrational spectrum of adsorbed hydrogen. Studies of arsine adsorption have shown that it dissociatively adsorbs only on gallium sites and transfers hydrogen to the neighbori

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Hadi, Walid A., Reddiprasad Cheekoori, Michael S. Shur, and Stephen K. O’Leary. "Transient electron transport in the III–V compound semiconductors gallium arsenide and gallium nitride." Journal of Materials Science: Materials in Electronics 24, no. 2 (2012): 807–13. http://dx.doi.org/10.1007/s10854-012-0818-2.

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Dissertations / Theses on the topic "Semiconductors; Gallium Arsenide"

1

Joyce, Timothy Bruce Frank. "The growth of gallium arsenide and gallium arsenide by chemical beam epitaxy." Thesis, University of Liverpool, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240620.

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Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t

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Hendricks, Douglas Ray 1958. "REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276394.

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Peng, Harry W. "The effects of stress on gallium arsenide device characteristics." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/28584.

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For VLSI applications, it is essential to have consistent device characteristics for devices fabricated on different fabrication runs, on different wafers, and especially across a single wafer. MESFETs fabricated on GaAs have been found to have an orientation dependence in their threshold voltage and other characteristics. For MESFETs with gate length less than 2 μm, changing the device orientation can so significantly alter the device characteristics that it must be considered during the transistor design stage. The causes for the orientation dependence in the device characteristics have been

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Feng, Guofu. "Optical studies of ion-bombarded gallium arsenide." Diss., Virginia Polytechnic Institute and State University, 1989. http://hdl.handle.net/10919/54357.

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The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered

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Jeffery, Arvi Denbigh 1960. "MEASUREMENT AND MODELING OF THE NONLINEAR ABSORPTION AND REFRACTIVE INDEX OF BULK GALLIUM-ARSENIDE AND GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE MULTIPLE-QUANTUM-WELLS." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276435.

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Rutherford, William C. "Gallium arsenide integrated circuit modeling, layout and fabrication." Thesis, University of British Columbia, 1987. http://hdl.handle.net/2429/26733.

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The object of the work described in this thesis was to develop GaAs integrated circuit modeling techniques based on a modified version of SPICE 2, then layout, fabricate, model and test ion implanted GaAs MESFET integrated sample and hold circuits. A large signal GaAs MESFET model was used in SPICE to evaluate the relative performance of inverted common drain logic (ICDL) digital integrated circuits compared to other circuit configurations. The integrated sample and hold subsequently referred to as an integrated sampling amplifier block(ISAB), uses a MESFET switch with either one or two guar

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MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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Goringe, Chris. "Computational modelling of reactions on gallium arsenide surfaces." Thesis, University of Oxford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296894.

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Bates, Richard L. "Gallium arsenide radiation detectors for the ATLAS experiment." Thesis, University of Glasgow, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360170.

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Books on the topic "Semiconductors; Gallium Arsenide"

1

Properties of aluminum gallium arsenide. The Institution of Engineering and Technology, 2006.

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2

Dave, Prochnow, ed. Experiments in gallium arsenide technology. Tab Books, 1988.

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Gallium arsenide digital circuits. Kluwer Academic Publishers, 1990.

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4

International Symposium on Gallium Arsenide and Related Compounds (18th 1991 Seattle, Wash.). Gallium arsenide and related compounds 1991: Proceedings of the eighteenth International Symposium on Gallium Arsenide and Related Compounds, Seattle, Washington, USA, 9-12 September 1991. Institute of Physics, 1992.

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5

E, Butner Steven, ed. Gallium arsenide digital integrated circuit design. McGraw-Hill, 1990.

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6

Long, Stephen I. Gallium arsenide digital integrated circuit design. McGraw-Hill, 1990.

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7

Williams, Ralph. Modern GaAs processing methods. 2nd ed. Artech House, 1990.

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8

GaAs devices and circuits. Plenum Press, 1987.

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9

International Symposium on Gallium Arsenide and Related Compounds (12th 1985 Karuizawa-machi, Japan). Gallium arsenide and related compounds 1985: Proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23-26 September, 1985. Published on behalf of the Institute of Physics by Hilger, 1986.

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10

Kostylev, Sergeĭ Aleksandrovich. I͡A︡vlenii͡a︡ tokoperenosa v tonkoplenochnykh arsenidgallievykh strukturakh. Nauk. dumka, 1990.

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Book chapters on the topic "Semiconductors; Gallium Arsenide"

1

Adachi, Sadao. "Gallium Arsenide (GaAs)." In Optical Constants of Crystalline and Amorphous Semiconductors. Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_22.

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Adachi, Sadao. "a-Gallium Arsenide (a-GaAs)." In Optical Constants of Crystalline and Amorphous Semiconductors. Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_67.

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Wilshaw, P. R., T. S. Fell, and G. R. Booker. "Recombination at Dislocations in Silicon and Gallium Arsenide." In Point and Extended Defects in Semiconductors. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5709-4_18.

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4

Pepper, M., C. J. B. Ford, C. G. Smith, et al. "Aspects of One Dimensional Transport Effects in Gallium Arsenide Heterojunction Structures." In Resonant Tunneling in Semiconductors. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3846-2_42.

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5

Bronevoi, I. L., A. N. Krivonosov, and V. I. Perel’. "Phonon Oscillations in a Spectrum of Reversible Bleaching of Gallium Arsenide under Interband Absorption of a High-Power Picosecond Light Pulse." In Hot Carriers in Semiconductors. Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_21.

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Liu, Dachun, Guozheng Zha, Liang Hu, and Wenlong Jiang. "Recovery of Gallium and Arsenic from Gallium Arsenide Semiconductor Scraps." In Energy Technology 2018. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-72362-4_28.

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Ghione, G., F. Bonani, M. Pirola, and C. U. Naldi. "Noise Modelling in Semiconductor Devices." In Gallium Arsenide Technology in Europe. Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-78934-2_17.

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Shur, Michael. "Gallium Arsenide versus Silicon — Applications and Modelling." In Semiconductor Device Modelling. Springer London, 1989. http://dx.doi.org/10.1007/978-1-4471-1033-0_5.

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Yamauchi, H., K. Chiba, and K. Yoshida. "Biological monitoring of arsenic exposure in inorganic arsenic and gallium arsenide-exposed semiconductor workers." In Arsenic. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5864-0_25.

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Carter, Dean E., and William T. Bellamy. "Toxicology of the Group III–V Intermetallic Semiconductor, Gallium Arsenide." In Biological Monitoring of Toxic Metals. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-0961-1_21.

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Conference papers on the topic "Semiconductors; Gallium Arsenide"

1

Магомадов, Р. М., and Р. Р. Юшаев. "INFLUENCE OF THE SEMICONDUCTOR CONDUCTIVITY ON THE VALUE OF THE SCHOTTKY BARRIER." In «АКТУАЛЬНЫЕ ВОПРОСЫ СОВРЕМЕННОЙ НАУКИ: ТЕОРИЯ, ТЕХНОЛОГИЯ, МЕТОДОЛОГИЯ И ПРАКТИКА». Международная научно-практическая онлайн-конференция, приуроченная к 60-ти летию член-корреспондента Академии наук ЧР, доктора технических наук, профессора Сайд-Альви Юсуповича Муртазаева. Crossref, 2021. http://dx.doi.org/10.34708/gstou.conf..2021.20.82.001.

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В данной работе исследовано влияние проводимости полупроводника на Барьер Шотки в контакте металл полупроводник. В качестве объектов исследования выбраны контакты с алюминием следующих полупроводников: арсенида индия(InAs), арсенида галлия (GaAs)антимонида индия(InSb) и сульфида кадмия(CdS). Выбор этих кристаллов связан с тем, что ширина запрещенной зоны этих полупроводников возрастает от Еg = 0,18 эВ у арсенида индия до Еg = 2,53 эВ у сульфида кадмия, что соответствует поставленной задаче в данной работе. In this paper, the influence of the conductivity of a semiconductor on the Schottky Barr

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2

Pugnet, Michel, Jacques H. Collet, and Laurent Nardo. "Photocurrent response to picosecond pulses in semiconductors: application to EL2 in gallium arsenide." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24390.

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Consigo, Harold Jeffrey M., Ricardo S. Calanog, and Melissa O. Caseria. "Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0496.

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Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with stat

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Morris, M. L., B. Cook, and J. DiSilvestro. "Application of Laser Scanning Microscope to Analyze Forward Voltage Snapback of Compound Semiconductors." In ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0185.

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Abstract A forward voltage (Vf) snapback phenomenon was observed during the analysis of silicon doped gallium-arsenide (GaAs) light emitting diodes (LEOs). In this paper emphasis is placed on both the techniques used during the analysis and the information obtained. Apart from the standard curve tracer characterizations, and utilization of two microsection techniques, significance is placed on the use of a laser scanning microscope (LSM). The LSM has four main analys is features: photoemission (FE) microscopy, optical beam induced current (OBIC), confocal microscopy and infrared laser scanning

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Haidar, R., Philippe Kupecek, Emmanuel Rosencher, Robert Triboulet, and Ph Lemasson. "New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching." In SPIE Proceedings, edited by Jaroslaw Rutkowski and Antoni Rogalski. SPIE, 2003. http://dx.doi.org/10.1117/12.519751.

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Kolner, Brian H. "Electro-Optic Sampling In Gallium Arsenide." In Semiconductor Conferences, edited by Ravinder K. Jain. SPIE, 1988. http://dx.doi.org/10.1117/12.940952.

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Norton, D. P., and P. K. Ajmera. "Photochemical Vapor Deposition Of Gallium Arsenide." In 1988 Semiconductor Symposium, edited by Harold G. Craighead and Jagdish Narayan. SPIE, 1988. http://dx.doi.org/10.1117/12.947391.

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Nagle, J., and David V. Morgan. "Silicon Nitride For Gallium Arsenide Integrated Circuits." In Semiconductor Conferences, edited by Sayan D. Mukherjee. SPIE, 1987. http://dx.doi.org/10.1117/12.941035.

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9

Saiz, Fernan, and Cristina H. Amon. "The Prediction of the Thermal Conductivity of Gallium Arsenide: A Molecular Dynamics Study." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48114.

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Gallium arsenide is the second most used semiconductor material with applications in light-emitting diodes, field-effect transistors, and integrated circuits. Thus, understanding and controlling the thermal conductivity of gallium arsenide is crucial to design devices for such applications. The goal of this study is to predict the thermal conductivity of gallium arsenide as a function of temperature and vacancy concentration. Thermal conductivities are predicted using an equilibrium molecular dynamics method based on the Green-Kubo formalism with temperatures between 300 K and 900 K and vacanc

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Chao, Paul C. P., Jian-Ruei Chen, Che-Hung Tsai, and Wei-Dar Chen. "Design and Realization of High Resolution (640×480) SWIR Image Acquisition System." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2917.

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Imaging technology has been in revolutionary progresses in decades with well-developed semiconductor and memory industries. Silicon sensors are used in most of camera and DV, since silicon is the best material for visible light imaging (wavelength from 400nm∼700nm). Short wave infrared (SWIR) requires indium gallium arsenide (InGaAs), composed of chemical compounds including indium arsenide (InAs) and gallium arsenide (GaAs), to cover SWIR spectrum. Wavelength of typical SWIR is defined between 0.7um and 2.5um; SWIR cameras focus on wavelength between 0.9um∼1.7um (In0.53Ga0.47As). Unlike Mid-W

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Reports on the topic "Semiconductors; Gallium Arsenide"

1

Penn, John. Gallium Arsenide (GaAs) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication (ARL Tile #2). Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada529992.

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Knoll, G. F. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/125360.

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Knoll, G. F. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/111840.

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Knoll, G. F. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/188626.

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In-depth survey report: control technology for gallium arsenide processing at Morgan Semiconductor, Garland, Texas. U.S. Department of Health and Human Services, Public Health Service, Centers for Disease Control and Prevention, National Institute for Occupational Safety and Health, 1994. http://dx.doi.org/10.26616/nioshectb16315b.

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