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Dissertations / Theses on the topic 'Semiconductors; Gallium Arsenide'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Joyce, Timothy Bruce Frank. "The growth of gallium arsenide and gallium arsenide by chemical beam epitaxy." Thesis, University of Liverpool, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240620.

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2

Muensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.

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"1998"--T.p.<br>Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.<br>Includes bibliographical references.<br>Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.<br>The present work represents t

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3

Hendricks, Douglas Ray 1958. "REACTIVE ION ETCHING OF GALLIUM-ARSENIDE AND ALUMINUM-GALLIUM - ARSENIDE USING BORON TRICHLORIDE AND CHLORINE." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276394.

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4

Peng, Harry W. "The effects of stress on gallium arsenide device characteristics." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/28584.

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For VLSI applications, it is essential to have consistent device characteristics for devices fabricated on different fabrication runs, on different wafers, and especially across a single wafer. MESFETs fabricated on GaAs have been found to have an orientation dependence in their threshold voltage and other characteristics. For MESFETs with gate length less than 2 μm, changing the device orientation can so significantly alter the device characteristics that it must be considered during the transistor design stage. The causes for the orientation dependence in the device characteristics have been

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5

Feng, Guofu. "Optical studies of ion-bombarded gallium arsenide." Diss., Virginia Polytechnic Institute and State University, 1989. http://hdl.handle.net/10919/54357.

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The present work studies the disorder in ion-implanted and ion-etched GaAs semiconductors. The primary targets in this study consist of two types of systems:45-keV Be⁺-implanted GaAs and low-energy Ar⁺-etched GaAs. Electronic and lattice structural disorder in these systems are investigated by means of optical reflectivity measurements and Raman-scattering techniques. Visible-ultraviolet reflectivity measurements have identified finite-size effects on the interband electronic excitations in microcrystalline GaAs (μ-GaAs), which is known from previous work to exist in Be⁺-implanted disordered

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6

Jeffery, Arvi Denbigh 1960. "MEASUREMENT AND MODELING OF THE NONLINEAR ABSORPTION AND REFRACTIVE INDEX OF BULK GALLIUM-ARSENIDE AND GALLIUM-ARSENIDE/ALUMINUM-GALLIUM - ARSENIDE MULTIPLE-QUANTUM-WELLS." Thesis, The University of Arizona, 1987. http://hdl.handle.net/10150/276435.

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7

Rutherford, William C. "Gallium arsenide integrated circuit modeling, layout and fabrication." Thesis, University of British Columbia, 1987. http://hdl.handle.net/2429/26733.

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The object of the work described in this thesis was to develop GaAs integrated circuit modeling techniques based on a modified version of SPICE 2, then layout, fabricate, model and test ion implanted GaAs MESFET integrated sample and hold circuits. A large signal GaAs MESFET model was used in SPICE to evaluate the relative performance of inverted common drain logic (ICDL) digital integrated circuits compared to other circuit configurations. The integrated sample and hold subsequently referred to as an integrated sampling amplifier block(ISAB), uses a MESFET switch with either one or two guar

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8

MacPherson, Glyn. "Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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9

Goringe, Chris. "Computational modelling of reactions on gallium arsenide surfaces." Thesis, University of Oxford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296894.

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10

Bates, Richard L. "Gallium arsenide radiation detectors for the ATLAS experiment." Thesis, University of Glasgow, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360170.

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11

Siochi, Ramon Alfredo Carvalho. "Optical characterization of processed gallium arsenide." Diss., Virginia Tech, 1990. http://hdl.handle.net/10919/39851.

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12

Liu, Jia. "Optical spectroscopic study of GaAs with dilute nitrogen doping /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?PHYS%202002%20LIU.

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13

Khatwani, Rani. "Electrical characterization of epitaxial layers of gallium arsenide /." Full text open access at:, 1988. http://content.ohsu.edu/u?/etd,180.

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14

Hui, David C. W. "Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide." Thesis, University of British Columbia, 1989. http://hdl.handle.net/2429/30648.

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This thesis consists of a study of several qualification techniques for SI LEC GaAs and the application of these techniques to various ingots. For use on the starting material before any doping procedures, the technique of studying the semi-insulating properties by monitoring the activation energy of dark resistivity with temperature was investigated. Experiments were performed on both ring dot as well as cloverleaf samples. Different activation energies for the dark resistivity were observed for temperatures above and below 290 K. Also, ingots with different background impurity concentration

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15

Yun, Henry K. "Growth and characterization of GaAsN compound semiconductors /." Thesis, Connect to this title online; UW restricted, 2001. http://hdl.handle.net/1773/10614.

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16

Westwater, Simon Phillip. "Heavily carbon doped gallium arsenide grown by chemical beam epitaxy." Thesis, University of Liverpool, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263763.

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17

Janse, van Vuuren Arno. "Radiation damage in GaAs and SiC." Thesis, Nelson Mandela Metropolitan University, 2011. http://hdl.handle.net/10948/1477.

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In this dissertation the microstructure and hardness of phosphorous implanted SiC and neutron irradiated SiC and GaAs have been investigated. SiC is important due to its application as a barrier coating layer in coated particle fuel used in high temperature gas cooled reactors. The characterisation of neutron irradiated GaAs has been included in this study in order to compare the radiation damage produced by protons and neutrons since proton bombardment of SiC could in principle be used for out-of-reactor simulations of the neutron irradiation damage created in SiC during reactor operation. Th

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18

Kelkar, Kapil S. "Semiconductor modeling for multi-layer, high field photo switch using sub-bandgap photons /." free to MU campus, to others for purchase, 2004. http://wwwlib.umi.com/cr/mo/fullcit?p1421147.

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19

Modi, Nihar Triplett Gregory Edward. "Thermal management in GaAs/AlGaAs laser diode structures." Diss., Columbia, Mo. : University of Missouri--Columbia, 2007. http://hdl.handle.net/10355/6262.

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Title from PDF of title page (University of Missouri--Columbia, viewed on Feb. 16, 2010). The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file. Thesis supervisor: Dr. Gregory Triplett. Includes bibliographical references.

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20

Baba-Ali, N. "Diffusion of sulphur and silicon in aluminium gallium arsenide." Thesis, University of Nottingham, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334989.

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21

Rosner, Mitchell Harris. "ARSENIC METABOLITE ANALYSIS AFTER GALLIUM-ARSENIDE AND ARSENIC OXIDE ADMINISTRATION (DISTRIBUTION, EXCRETION, SOLUBILITY, HAMSTER)." Thesis, The University of Arizona, 1985. http://hdl.handle.net/10150/275409.

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22

Schucan, Gian-Mattia. "Generation of squeezed light in semiconductors." Thesis, University of Oxford, 1999. http://ora.ox.ac.uk/objects/uuid:417b1d31-8d25-42db-b707-32bd460b4183.

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We present experimental studies based on all three methods by which the generation of squeezed light in semiconductors has thus far been demonstrated experimentally: Fourwave mixing, multi-photon absorption and direct generation at the source. Four-wave mixing was used to generate femtosecond-pulsed quadrature squeezed light by cross-phase modulation in single-crystal hexagonal CdSe at wavelengths between 1.42 and 1.55 μm. We measured 0.4 dB squeezing (1.1 dB is inferred at the crystal) using 100 fs pulses. The wavelength and the intensity dependence, as well as variations in the local oscilla

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23

Huang, Ying. "Electronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells." Thesis, Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31479820.

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24

Rosner, Mitchell Harris. "Elucidation of the mechanism of gallium-arsenide induced pulmonary toxicity." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184627.

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Gallium arsenide (GaAs) elicited a pulmonary inflammatory response in a dose dependent manner following a single exposure. A significant influx of leukocytes (polymorphonuclear cells) was observed 24 hours after intratracheal instillation of rats and hamsters. This led to an increase in the lung/body weight ratios. An increase in pulmonary DNA and total protein accompanied these observations. Histology confirmed the presence of increased numbers of pulmonary alveolar macrophages (PAM) even 1 week after exposure to GaAs. The instillation of GaAs also appeared to produce an oxidative stress in t

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25

Galloway, Simon A. "The electrical properties of dislocations in GaAs." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386991.

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26

Dai, Junfeng, and 戴俊峰. "Spin photocurrent induced by interband transition." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hdl.handle.net/10722/210326.

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27

Bousbahi, K. "Investigations of some defects in GaAs and some transport properties of GaAs/(AlGa)As heterojunctions." Thesis, University of Nottingham, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356075.

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28

Tayrani, R. "GaAs monolithic control devices and circuits." Thesis, University of Kent, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.376796.

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29

Murape, Davison Munyaradzi. "On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb." Thesis, Nelson Mandela Metropolitan University, 2014. http://hdl.handle.net/10948/d1020763.

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Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It is difficult to picture a world without the modern day cutting edge technology. Imagine performing every day functions without “trivial” devices such as computers, cell phones or microwave ovens. The ability to tailor the band gaps of various binary, ternary and quaternary semiconductor systems has opened up a whole new spectrum of potential purpose designed devices [27]. This thesis focuses on the electronic properties of gallium (III) an

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30

Woodworth, Sean C. Cassidy Daniel Thomas. "Design, theory, and applications of broad gain profile indium gallium arsenide phosphide diode lasers /." *McMaster only, 2005.

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31

Og̃uzman, İsmail Hakki. "Monte Carlo study of hole transport in bulk silicon, gallium arsenide, gallium nitride and relate device structures." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/16712.

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32

Puttock, Mark Stephen. "The study of surface damage of gallium arsenide induced by reactive ion etching." Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.309647.

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33

Ma, Shun-kit Martin. "The two gallium vacancy-related defects in undoped gallium antimonide." Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31319658.

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34

Rinzan, Mohamed Buhary. "Threshold extension of gallium arsenide/aluminum gallium arsenide terahetrz detectors and switching in heterostructures." unrestricted, 2006. http://etd.gsu.edu/theses/available/etd-10102006-204618/.

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Thesis (Ph. D.)--Georgia State University, 2006.<br>Title from title screen. Unil Perera, committee chair; Donald Edwards, Gennady Cymbaluyk, Mark Stockman, Nikolaus Dietz, Paul Wiita, committee members. Electronic text (348, 24-32 p. : ill.) : digital, PDF file. Description based on contents viewed June 8, 2007. Includes bibliographical references (p. 24-30, second sequence).

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35

Wilkinson, Lucinda Clare. "Indium gallium arsenide multiple quantum well devices for optically interconnected smart pixels." Thesis, Heriot-Watt University, 1998. http://hdl.handle.net/10399/640.

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36

Hanson, Craig Demorest 1956. "Demonstration of capabilities of gallium arsenide etalons for practical optical logic." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277204.

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All-optical logic gates made from GaAs etalons were studied to see if they may be useful for optical computing. We have demonstrated that GaAs etalons may produce a change in output optical signal four times larger than the change in the input signal, and that the contrast of the output signal may be as high as 10 to 1. We have cascaded two GaAs etalons, i.e. the output change in the first causes the second one to switch. We have combined two signal beams and a biasing beam onto a GaAs etalon using polarized beams for a fan-in investigation, and have demonstrated that this setup may be used as

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37

Filleul, Maria Louise. "An examination of the damage caused by the reactive ion etching of gallium arsenide." Thesis, University College London (University of London), 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296102.

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38

Ma, Shun-kit Martin, and 馬信傑. "The two gallium vacancy-related defects in undoped gallium antimonide." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B31319658.

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39

Wang, Yong. "Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD /." View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20WANGY.

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40

Michels, Joseph Gerard. "Optically detected cyclotron resonance of GaAs-based semiconductors." Thesis, University of Oxford, 1994. http://ora.ox.ac.uk/objects/uuid:20ffc752-d7e7-4631-803a-bfeb9b12dfc6.

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Cyclotron resonance has been measured in GaAs and related compounds through the use of a new experimental technique developed for the study of very pure semiconductors called optically detected cyclotron resonance (ODCR). ODCR differs from other forms of magnetospectroscopy in that the intensity of luminescence excited by a visible laser is monitored rather than the direct absorption of far-infrared radiation. The ODCR technique is initially used on an exceptionally pure sample of GaAs and resolves impurity transitions and central cell effects. An accurate measure of the electron effective mas

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41

Breevoort, Cornelius Marius. "A 9-bit, pipelined GaAs analog-digital converter." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/15036.

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42

凌志聰 and Chi-chung Francis Ling. "Positron beam studies of the metal-GaAs (110) interface." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1994. http://hub.hku.hk/bib/B31211689.

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43

雷美琪 and Mei-ki Pattie Lui. "Positron lifetime study of Zn-doped GaSb." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31226437.

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44

Lui, Mei-ki Pattie. "Positron lifetime study of Zn-doped GaSb /." Hong Kong : University of Hong Kong, 2001. http://sunzi.lib.hku.hk/hkuto/record.jsp?B24534328.

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45

Ling, Chi-chung Francis. "Positron beam studies of the metal-GaAs (110) interface /." [Hong Kong : University of Hong Kong], 1994. http://sunzi.lib.hku.hk/hkuto/record.jsp?B13781443.

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46

Booth, Ian. "Optical detection of paramagnetic and cyclotron resonance in semiconductors." Thesis, University of British Columbia, 1985. http://hdl.handle.net/2429/25566.

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Optical Detection of Magnetic Resonance (ODMR) has been used to observe both paramagnetic and diamagnetic resonance of photo-excited electrons and holes in GaP, ZnTe and AgBr. Paramagnetic resonance of conduction electrons in GaP has been studied and the microwave frequency and power dependence of the effect analysed. The maximum signal strength was observed to produce approximately 1% change in luminescence at 1.6 K. The g value deduced from the resonance was 2.000 ± 0.005. The resonance was homogeneously broadened giving the electron lifetime as approximately 4 nanoseconds. Paramagnetic res

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47

LEE, YONG HEE. "ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GALLIUM-ARSENIDE AND FAST OPTICAL LOGIC GATES." Diss., The University of Arizona, 1986. http://hdl.handle.net/10150/183920.

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This dissertation studies the physics of room-temperature optical nonlinearities in GaAs and their application to the optical logic gates. The microscopic origins of the room-temperature optical nonlinearities in GaAs are investigated experimentally and theoretically. The data of nonlinear absorption measurement are analyzed in the framework of a semiconductor plasma theory in combination with excitation-dependent line broadening. The importance of the plasma screening of the continuum-state Coulomb enhancement and band filling are emphasized for GaAs at room temperature. Optical bistability a

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48

Warren, Mial Evans. "Fabrication, experimental investigation and computer modeling of gallium-arsenide nonlinear optical devices." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184330.

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Nonlinear-optical switching and logic devices based on GaAs nonlinear Fabry-Perot etalons have been investigated theoretically and experimentally. The theoretical modeling has been performed with the first realistic and easily computed theory of GaAs nonlinear optical properties near the band edge. Both steady-state and dynamic calculations have been performed for optical bistability with GaAs etalons. High-transmission operation is predicted for certain etalon detunings from the excitation wavelength. Various logic-gate functions have simulated with the model. An investigation of differential

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49

Goss, Jonathan Paul. "A first principles study of defects in semiconductors." Thesis, University of Exeter, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361336.

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50

McGeever, Michael K. "Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch /." Title page, contents and abstact only, 1995. http://web4.library.adelaide.edu.au/theses/09PH/09phm1449.pdf.

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