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Journal articles on the topic 'Semiconductors; Gallium Arsenide'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Brodsky, Marc H. "Progress in Gallium Arsenide Semiconductors." Scientific American 262, no. 2 (1990): 68–75. http://dx.doi.org/10.1038/scientificamerican0290-68.

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2

Webb, J. D., D. J. Dunlavy, T. Ciszek, et al. "Room-Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an FT-Raman Spectrophotometer." Applied Spectroscopy 47, no. 11 (1993): 1814–19. http://dx.doi.org/10.1366/0003702934066019.

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This paper demonstrates the utility of an FT-Raman accessory for an FT-IR spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-IR/PL spectroscopy included bulk silicon and films of gallium indium arsenide phosphide (GaInAsP), copper indium diselenide (CuInSe2), and gallium arsenide-germanium alloy on various substrates. The FT-IR/PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in

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3

Kushibiki, Nobuo, Masami Tsukamoto, and Tomoki Erata. "Solid-state high-resoluction NMR studies on gallium arsenide and indium gallium arsenide semiconductors." Chemical Physics Letters 129, no. 3 (1986): 303–5. http://dx.doi.org/10.1016/0009-2614(86)80216-0.

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4

Shi, Jing, James M. Kikkawa, Roger Proksch, et al. "Assembly of submicrometre ferromagnets in gallium arsenide semiconductors." Nature 377, no. 6551 (1995): 707–10. http://dx.doi.org/10.1038/377707a0.

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5

Fang, S. F., K. Adomi, S. Iyer, et al. "Gallium arsenide and other compound semiconductors on silicon." Journal of Applied Physics 68, no. 7 (1990): R31—R58. http://dx.doi.org/10.1063/1.346284.

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6

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associat

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7

Ryan, John. "Semiconductors: An optical Stark effect observed in gallium arsenide." Nature 324, no. 6095 (1986): 303. http://dx.doi.org/10.1038/324303a0.

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8

Stern, Michael, Vladimir Umansky, and Israel Bar-Joseph. "Exciton Liquid in Coupled Quantum Wells." Science 343, no. 6166 (2014): 55–57. http://dx.doi.org/10.1126/science.1243409.

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Excitons in semiconductors may form correlated phases at low temperatures. We report the observation of an exciton liquid in gallium arsenide/aluminum gallium arsenide–coupled quantum wells. Above a critical density and below a critical temperature, the photogenerated electrons and holes separate into two phases: an electron-hole plasma and an exciton liquid, with a clear sharp boundary between them. The two phases are characterized by distinct photoluminescence spectra and by different electrical conductance. The liquid phase is formed by the repulsive interaction between the dipolar excitons

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9

LI, L. "SITE-SPECIFIC SURFACE CHEMISTRY OF GaAs (001)." Surface Review and Letters 07, no. 05n06 (2000): 625–29. http://dx.doi.org/10.1142/s0218625x00000786.

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In this article, we summarize our studies of the surface chemistry of gallium arsenide as it pertains to the metal organic chemical vapor deposition of compound semiconductors. It has been found by scanning tunneling microscopy and vibrational spectroscopy that the adsorption of reactant molecules on reconstruted GaAs (001) surfaces is "site-specific." The adsorption sites on the semiconductor surface are revealed by the vibrational spectrum of adsorbed hydrogen. Studies of arsine adsorption have shown that it dissociatively adsorbs only on gallium sites and transfers hydrogen to the neighbori

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10

Hadi, Walid A., Reddiprasad Cheekoori, Michael S. Shur, and Stephen K. O’Leary. "Transient electron transport in the III–V compound semiconductors gallium arsenide and gallium nitride." Journal of Materials Science: Materials in Electronics 24, no. 2 (2012): 807–13. http://dx.doi.org/10.1007/s10854-012-0818-2.

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11

Chebotarev, S. N., V. A. Irkha, and Adnan A. A. Mohamed. "Low-Energy Ion Technique for Semiconductor Surface Preparation." Solid State Phenomena 284 (October 2018): 198–203. http://dx.doi.org/10.4028/www.scientific.net/ssp.284.198.

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We proposed an experimental technique for determining the sputtering yields of two-component semiconductors – gallium arsenide and indium arsenide by low-energy argon ions. It was suggested to measure the volume of a crater formed by inert ions bombarding on the target surface using the method of scanning laser confocal microscopy. It was demonstrated that in the energy range from 100 to 300 eV, the energy dependence of sputtering yields for these materials is practically linear. It is established that the sputtering yields for normal bombardment by argon ions at optimum energy of 150 eV are e

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12

Murakami, Masanori. "Development of refractory ohmic contact materials for gallium arsenide compound semiconductors." Science and Technology of Advanced Materials 3, no. 1 (2002): 1–27. http://dx.doi.org/10.1016/s1468-6996(01)00150-4.

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13

Omura, Minoru, Miyuki Hirata, Akiyo Tanaka, et al. "Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters." Toxicology Letters 89, no. 2 (1996): 123–29. http://dx.doi.org/10.1016/s0378-4274(96)03796-4.

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14

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible

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15

Williams, J. S., Y. Chen, J. Wong-Leung, A. Kerr, and M. V. Swain. "Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters." Journal of Materials Research 14, no. 6 (1999): 2338–43. http://dx.doi.org/10.1557/jmr.1999.0310.

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Details of microindentation of silicon, such as the semiconductor-to-metal transformation, which takes place on loading, have been examined using spherical indenters. Various forms of silicon are studied, including heavily boron-doped wafers and silicon damaged and amorphized by ion implantation as well as material containing dislocations. Results indicate that only silicon, which contains high concentrations of point defects or is amorphous, exhibits mechanical properties that differ significantly from undoped, defect-free crystal. Amorphous silicon exhibits plastic flow under low indentation

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16

Mendes, Marco, Jeffrey Sercel, Mathew Hannon, et al. "Advanced Laser Scribing for Emerging LED Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.

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Lasers are becoming increasingly important in today's LED revolution and are essential for increasing the efficiency and reducing manufacturing cost of LEDs. Diode pumped solid state lasers excel in scribing horizontal type LEDs on sapphire, silicon, silicon carbide, III-nitrides (gallium nitride and aluminum nitride), as well as III-V semiconductors (gallium arsenide, gallium phosphide). These lasers are also used for dicing vertical type LEDs, which are becoming increasingly more important, often using high thermal conductivity metallic substrates such as copper, CuW and molybdenum. In this

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17

Жуков, Н. Д., А. И. Михайлов та Д. С. Мосияш. "О механизме и особенностях полевой эмиссии в полупроводниках". Физика и техника полупроводников 53, № 3 (2019): 340. http://dx.doi.org/10.21883/ftp.2019.03.47285.8612.

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AbstractThe field electron emission from individual grains on the surface of Si and III–V semiconductors, namely, gallium arsenide, indium arsenide, and indium antimonide is investigated by scanning tunneling microscopy. From the correspondence of the functional dependence of the I – V characteristic to the theory, the emission mechanism is determined as direct tunneling through a depleted or enriched subsurface layer at the voltages V < 1 V and the tunneling emission from the surface electronic states at the voltages V > 1 V. A field-emission threshold of (1–5) × 10^6 V/cm is obtained,

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18

Cowley, Alan H., and Richard A. Jones. "Single-Source III/V Precursors: A New Approach to Gallium Arsenide and Related Semiconductors." Angewandte Chemie International Edition in English 28, no. 9 (1989): 1208–15. http://dx.doi.org/10.1002/anie.198912081.

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19

Moulins, Anthony, Roberto Dugnani, and Ricardo J. Zednik. "Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography." Engineering Failure Analysis 123 (May 2021): 105313. http://dx.doi.org/10.1016/j.engfailanal.2021.105313.

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20

Богацкая, А. В., Н. В. Кленов, П. М. Никифорова, А. М. Попов та А. Е. Щеголев. "Резонансное болометрическое детектирование широкополосных сигналов терагерцевого диапазона частот". Письма в журнал технической физики 47, № 17 (2021): 50. http://dx.doi.org/10.21883/pjtf.2021.17.51388.18850.

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We discuss the detection of broadband radiation in the terahertz frequency range by a bolometric method using heterostructures consisting of a sequence of conducting and dielectric layers of doped and undoped semiconductors (gallium arsenide, germanium). This structure forms a photonic crystal with allowed and forbidden bands (absorption and transmission ranges). By selecting the thicknesses of the conductive and non-conductive layers and the doping levels, it is possible to form spectral intervals of effective absorption, which allows detecting pulses in the frequency range >10^12 Hz with

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21

Ivanda, M., I. Hartmann, and W. Kiefer. "Boson peak in the Raman spectra of amorphous gallium arsenide: Generalization to amorphous tetrahedral semiconductors." Physical Review B 51, no. 3 (1995): 1567–74. http://dx.doi.org/10.1103/physrevb.51.1567.

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22

Bakkar, Ashraf. "Electrochemical Synthesis of Silicon and Gallium Arsenide Photovoltaic Thin Films: A Critical Review and a Novel Approach." Materials Science Forum 1008 (August 2020): 84–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1008.84.

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This paper presents, firstly, an overview of results arisen worldwide on semiconductive thin films used in photovoltaic (PV) cells as a function of time and efficiency. Secondly, the paper demonstrates the electrodeposition of silicon and gallium arsenide films suggested for PV cells, with a focus on electrodeposition from ionic liquids. Ionic liquids, due to their wide electrochemical window, are used for the electrodeposition of elements and compounds impossible to be electrodeposited from aqueous solutions. Finally, a new approach, referred to a recent patent by the author, is illustrated t

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23

Sareen, Rob. "Semiconductor X-Ray Detectors." Microscopy Today 6, no. 6 (1998): 8–12. http://dx.doi.org/10.1017/s1551929500068152.

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Detection of characteristic x-rays is a fascinating and challenging subject. From its early beginnings with gas proportional counters it has evolved, like many branches of technology, into the use of a variety of semiconductors.The lithium compensated silicon detector [Si(Li)] has been the predominant measuring tool over the last two decades, in the last five years, increasing numbers of high purity germanium detectors (HPG) have appeared and more recently a plethora of new materials and concepts are seeing a successful introduction. Among these newer materials are compound semiconductors like

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24

Nan, Junyi, Min Li, Ling Zhang, Shuai Yuan, Boqu He, and Heping Zeng. "Terahertz and Photoelectron Emission from Nanoporous Gold Films on Semiconductors." Nanomaterials 9, no. 3 (2019): 419. http://dx.doi.org/10.3390/nano9030419.

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Efficient terahertz and photoelectron emission were observed from nano-porous gold (NPG) films deposited on an intrinsic gallium arsenide (GaAs) semiconductor substrate stimulated by femtosecond laser with pulse width of 60 fs. Time-domain THz emission and reflection spectroscopy confirmed that the free charges accelerated by irradiated femtosecond laser pulses transferred from the NPG films into the GaAs substrates. Accordingly, charges accumulation was reduced in the NPG films, resulting in a stronger emission of THz pulse than that from NPG films deposited on SiO2 substrate. Charges injecte

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25

Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.

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The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and pla

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26

Rorison, J. M., and D. C. Herbert. "Electron-electron interaction in semiconductors with application to hot-electron transistors in silicon and gallium arsenide." Journal of Physics C: Solid State Physics 19, no. 21 (1986): 3991–4010. http://dx.doi.org/10.1088/0022-3719/19/21/006.

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27

COWLEY, A. H. "ChemInform Abstract: Organometallic Chemical Vapor Deposition of Gallium Arsenide and Related Semiconductors Using Novel Organometallic Precursors." ChemInform 22, no. 52 (2010): no. http://dx.doi.org/10.1002/chin.199152326.

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28

ROBINSON, A. L. "A Silicon Solution for Gallium Arsenide IC's: Epitaxial growth of crystalline gallium arsenide layers on silicon wafers could combine the best properties of both semiconductors in future high-speed microelectronic chips." Science 232, no. 4752 (1986): 826–28. http://dx.doi.org/10.1126/science.232.4752.826.

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29

Braun, Robert, Nora Schönberger, Svenja Vinke, Franziska Lederer, Jörn Kalinowski, and Katrin Pollmann. "Application of Next Generation Sequencing (NGS) in Phage Displayed Peptide Selection to Support the Identification of Arsenic-Binding Motifs." Viruses 12, no. 12 (2020): 1360. http://dx.doi.org/10.3390/v12121360.

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Next generation sequencing (NGS) in combination with phage surface display (PSD) are powerful tools in the newly equipped molecular biology toolbox for the identification of specific target binding biomolecules. Application of PSD led to the discovery of manifold ligands in clinical and material research. However, limitations of traditional phage display hinder the identification process. Growth-based library biases and target-unrelated peptides often result in the dominance of parasitic sequences and the collapse of library diversity. This study describes the effective enrichment of specific

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30

Aktik, C., J. Beerens, S. Blain, and A. Bsiesy. "Epitaxial growth of gallium arsenide prepared by low-pressure metal-organic chemical vapour deposition at low temperatures." Canadian Journal of Physics 70, no. 10-11 (1992): 893–97. http://dx.doi.org/10.1139/p92-141.

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The low-pressure metal-organic chemical vapour deposition (LPMOCVD) technique has been investigated previously as a growth method for compound semiconductors, offering the possibility of selective epitaxy and the potential advantage of better controllability for changing the doping level and the alloy composition. Low-temperature growth is also desirable to reduce the carbon incorporation generated by the decomposition of the organic radicals. In this article we report for the first time the epitaxial growth of gallium arsenide (GaAs) by LPMOCVD at temperatures as low as 510 °C. The vertical r

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31

Yoon, Jongseung. "III-V Nanomembranes for High Performance, Cost-Competitive Photovoltaics." MRS Advances 2, no. 30 (2017): 1591–96. http://dx.doi.org/10.1557/adv.2017.139.

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ABSTRACTDue to their highly favorable materials properties such as direct bandgap, appropriate bandgap energy against solar spectrum, and ability to form multiple junctions, epitaxially grown III-V compound semiconductors such as gallium arsenide have provided unmatched performance over silicon in solar energy harvesting. However, their large-scale deployment in terrestrial photovoltaics remains as a daunting challenge mainly due to the high cost of growing device-quality epitaxial materials. In this regard, releasable multilayer epitaxial growth in conjunction with printing-based deterministi

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32

Oates, W. A., and H. Wenzl. "Temperature-chemical potential diagrams for the representation of defect and phase equilibria in compound semiconductors—application to gallium arsenide." Journal of Physics and Chemistry of Solids 49, no. 11 (1988): 1363–71. http://dx.doi.org/10.1016/0022-3697(88)90220-x.

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33

Gogotsi, Yury G., Vladislav Domnich, Sergey N. Dub, Andreas Kailer, and Klaus G. Nickel. "Cyclic Nanoindentation and Raman Microspectroscopy Study of Phase Transformations in Semiconductors." Journal of Materials Research 15, no. 4 (2000): 871–79. http://dx.doi.org/10.1557/jmr.2000.0124.

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This paper supplies new interpretation of nanoindentation data for silicon, germanium, and gallium arsenide based on Raman microanalysis of indentations. For the first time, Raman microspectroscopy analysis of semiconductors within nanoindentations is reported. The given analysis of the load-displacement curves shows that depth-sensing indentation can be used as a tool for identification of pressure-induced phase transformations. Volume change upon reverse phase transformation of metallic phases results either in a pop-out (or a kink-back) or in a slope change (elbow) of the unloading part of

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34

Poklonski, N. A., A. N. Dzeraviaha, and S. A. Vyrko. "Localization by an external magnetic field of electrons on the ions of hydrogen-like donors in non-degenerate semiconductors." Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series 56, no. 2 (2020): 239–52. http://dx.doi.org/10.29235/1561-2430-2020-56-2-239-252.

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In the quasi-classical approximation of quantum mechanics a model for the localization of conduction electrons on the ions of hydrogen-like donors in an external magnetic field was developed. The thermal ionization energy of donors in lightly doped and moderately compensated crystals of gallium arsenide and indium antimonide of n-type was calculated depending on the induction of the external magnetic field. In contrast to the known theoretical works (which use variational methods for solving the Schrödinger equation), a simple analytical expression is proposed for the ionization energy of the

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35

Rieger, M., P. Kocevar, P. Lugli, P. Bordone, L. Reggiani, and S. M. Goodnick. "Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. II. Non-Ohmic transport inn-type gallium arsenide." Physical Review B 39, no. 11 (1989): 7866–75. http://dx.doi.org/10.1103/physrevb.39.7866.

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36

Poklonski, Nikolai A., Sergey A. Vyrko, and Aliaksandr N. Dzeraviaha. "Thermal ionization energy of hydrogen-like impurities in semiconductor materials." Journal of the Belarusian State University. Physics, no. 2 (June 4, 2020): 28–41. http://dx.doi.org/10.33581/2520-2243-2020-2-28-41.

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In the work the dependence of the thermal ionization energy of hydrogen-like donors and acceptors on their concentration in n- and p-type semiconductors is analyzed analytically and numerically. The impurity concentrations and temperatures at which the semiconductors are on the insulator side of the concentration insulator – metal phase transition (Mott transition) are considered. It is assumed that impurities in the crystal are distributed randomly (according to Poisson), and their energy levels are distributed normally (according to Gauss). In the quasi-classical approximation, it is shown,

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37

Pereira, Maria Cecília Barbosa, and Clóves Gonçalves Rodrigues. "Comparativo da mobilidade eletrônica do arseneto de gálio com outros semicondutores / Comparison of the electronic mobility of gallium arsenide with other semiconductors." Brazilian Journal of Business 3, no. 2 (2021): 1853–60. http://dx.doi.org/10.34140/bjbv3n2-037.

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Neste trabalho inicialmente foi discutida a importância dos materiais semicondutores e algumas de suas características. Em seguida foi utilizada uma consagrada equação diferencial, obtida por meio de uma teoria cinética quântica não linear, para determinar a mobilidade eletrônica do semicondutor arseneto de gálio e o resultado foi comparado com a mobilidade de outros semicondutores conhecidos. Foi possível concluir que o arseneto de gálio possui uma mobilidade muito maior que os demais semicondutores, o que permite uma operação muito mais rápida em dispositivos eletrônicos.

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Mukhokosi, Emma P., Gollakota V. S. Manohar, Tadaaki Nagao, Saluru B. Krupanidhi, and Karuna K. Nanda. "Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review." Micromachines 11, no. 8 (2020): 750. http://dx.doi.org/10.3390/mi11080750.

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While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps an

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Chin, G. Y. "Views on an Electronic Materials Education." MRS Bulletin 12, no. 4 (1987): 47–48. http://dx.doi.org/10.1557/s0883769400067804.

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Electronic materials constitutes a sub-field of materials. Therefore the issues raised concerning an electronic materials education must necessarily be viewed in the broader context of a comprehensive materials education. Yet electronic materials do differ from other subfields in several ways.First, unlike the traditional metals, ceramics and polymers, which are defined primarily by chemical composition, electronic materials are defined by functions, i.e., they are used in devices that provide electronic functions. As such, electronic materials encompass metals, ceramics, and polymers as well

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40

Chen, Wei Ting, Yung Chuan Chu, Jian Ming Wei, et al. "Gallium and Arsenic Recovery from Waste Gallium Arsenide by Wet Refined Methods." Advanced Materials Research 194-196 (February 2011): 2115–18. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2115.

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This study was focused on the recovery of gallium arsenide (GaAs) from semiconductor fabrication sludge. Wet refined methods were applied to recover gallium (Ga) including acid leaching, purified isolation, electrolysis, and coagulation. The result showed that leaching Ga with nitric acid (HNO3) was more efficient than with sulfuric acid (H2SO4). GaAs could be leached with 4 N HNO3 to obtain 100% Ga+ and arsenic (As—). The pH was adjusted with sodium hydroxide (NaOH). Then, the solution was extracted by di(2-ethylhexyl) phosphoric acid (D2EHPA) and was back extracted by H2SO4. In this way, Ga

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41

Akimov, Ilya A., G. V. Astakhov, R. I. Dzhioev, et al. "Spin Relaxation in GaAs Doped with Magnetic (Mn) Atoms." Solid State Phenomena 168-169 (December 2010): 47–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.168-169.47.

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The GaAs doped with donors manifests long times of spin relaxation, while in the case of acceptors (or magnetic impurities) spin relaxation rate increases markedly, in accordance with theoretical predictions. From the practical point of view, this situation is unfavorable, since the devices based on spin degrees of freedom require long times of the spin memory. Therefore semiconductors such as p-GaAs were not considered as promising materials for spintronics. In the present work this conclusion is refuted by means of investigation of the spin dynamics of electrons in epitaxial layers of galliu

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42

Glass, J. T., B. A. Fox, D. L. Dreifus, and B. R. Stoner. "Diamond for Electronics: Future Prospects of Diamond SAW Devices." MRS Bulletin 23, no. 9 (1998): 49–55. http://dx.doi.org/10.1557/s0883769400029377.

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From a commercialization standpoint, electronic applications have been particularly elusive for diamond. Market estimates of $560 million per year by the year 2000 indicate the original enthusiasm in this area. Now such projections seem unreasonably optimistic, and even a niche commercial application in the area of electronics would be considered a success. However when taken in a broader context, this extended time frame for commercialization is not at all unusual for new technologies, and many new advances have continued to bolster the enthusiasm of diamond electronics research groups. Diamo

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Nguyen, Chi H., Chao Zeng, Scott Boitano, Jim A. Field, and Reyes Sierra-Alvarez. "Cytotoxicity Assessment of Gallium- and Indium-Based Nanoparticles Toward Human Bronchial Epithelial Cells Using an Impedance-Based Real-Time Cell Analyzer." International Journal of Toxicology 39, no. 3 (2020): 218–31. http://dx.doi.org/10.1177/1091581820914255.

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The semiconductor manufacturing sector plans to introduce III/V film structures (eg, gallium arsenide (GaAs), indium arsenide (InAs) onto silicon wafers due to their high electron mobility and low power consumption. Aqueous solutions generated during chemical and mechanical planarization of silicon wafers can contain a mixture of metal oxide nanoparticles (NPs) and soluble indium, gallium, and arsenic. In this work, the cytotoxicity induced by Ga- and In-based NPs (GaAs, InAs, Ga2O3, In2O3) and soluble III-V salts on human bronchial epithelial cells (16HBE14o-) was evaluated using a cell imped

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D. M, Okpaga. "Investigating the Impacts of Temperature on the Electronic Conductivity of Si AND GaAs." International Journal for Research in Applied Science and Engineering Technology 9, no. 8 (2021): 2807–13. http://dx.doi.org/10.22214/ijraset.2021.37861.

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Abstract: This work explains the impacts of temperature on the electronic conductivity of silicon and gallium arsenide. Illustrations of how conductivity varies at different temperatures were depicted using equations and graphs. The effective use of semiconductor materials depends on the proper fabrication of the material about its temperature dependence. Also, the analysis of the variation of electronic conductivity in both silicon and that of gallium arsenide with a small band gap is performed towards analyzing the impacts of this on silicon and gallium arsenide. Keywords: Temperature, Silic

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Chen, Wei-Sheng, Ko-Wei Tien, Li-Pang Wang, Cheng-Han Lee, and Yi-Fan Chung. "Recovery of Gallium from Simulated GaAs Waste Etching Solutions by Solvent Extraction." Sustainability 12, no. 5 (2020): 1765. http://dx.doi.org/10.3390/su12051765.

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Gallium arsenide is used in semiconductor industries worldwide. Numerous waste etching solutions are produced during the processes of GaAs wafer production. Therefore, a complete and eco-friendly technology should be established to recover gallium as a gallium chloride solution and remove arsenic ion from waste GaAs etching solution. In this study, the gallium trichloride and arsenic trisulfide powders were dissolved in ammonia solutions to prepare the simulated solutions, and the pH value was adjusted to pH 2 by nitric acid. In the extraction step, the GaAs etching solutions were extracted us

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Novosyadlyi, S. P., and V. S. Huzik. "Computer Simulation of Gallium Arsenide Super Beta Transistors Heterostructures for High-Speed BIS." Фізика і хімія твердого тіла 16, no. 3 (2015): 599–605. http://dx.doi.org/10.15330/pcss.16.3.599-605.

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Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been and remains the main material. However, today began intensively implemented circuits based on gallium arsenide. Gallium arsenide circuits of the high charge carrier mobility with a frequency range of operation of reach for chips based on silicon (Si).

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Fetisov, Leonid, Dmitri Chashin, Dmitri Saveliev, Daria Plekhanova, Ludmila Makarova, and Alexandr Stognii. "Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures." EPJ Web of Conferences 185 (2018): 07005. http://dx.doi.org/10.1051/epjconf/201818507005.

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The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≈ 23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.

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Mcghee, Laurence, Irene Nicol, Robert D. Peacock, Max I. Robertson, Paul R. Stevenson, and John M. Winfield. "Halogen etching of group 13–15 (3–5) semiconductors and its relevance to chemical–mechanical polishing. The reactions of dibromine, dichlorine and sodium hypochlorite with gallium arsenide and related materials." Journal of Materials Chemistry 7, no. 12 (1997): 2421–26. http://dx.doi.org/10.1039/a706242g.

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SPINARDI, GRAHAM. "The limits to ‘spin-off’: UK defence R & D and the development of gallium arsenide technology." British Journal for the History of Science 45, no. 1 (2011): 97–121. http://dx.doi.org/10.1017/s000708741100063x.

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AbstractUK defence R & D played a leading role in the development of gallium arsenide and other III–V semiconductor materials. Often touted as the semiconductor of the future because of its potential for high-speed computing, gallium arsenide had unique properties compared to silicon that made it attractive for military applications. Some consumer applications were also developed, and these eventually became significant with its use in mobile phone handsets in the mid-1990s. However, despite the apparent advantage of close links to the defence establishments and early access to expertise i

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Drygaś, Mariusz, Piotr Jeleń, Marta Radecka, and Jerzy F. Janik. "Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN." RSC Advances 6, no. 47 (2016): 41074–86. http://dx.doi.org/10.1039/c6ra05706c.

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Single-step N-for-As metathesis reactions of gallium arsenide GaAs with ammonia NH<sub>3</sub> at temperatures in the range 650–950 °C for 6–90 hours afforded high yields of pure nanocrystalline powders of the wide bandgap semiconductor gallium nitride GaN.

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