Academic literature on the topic 'Semiconductors II-VI'

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Journal articles on the topic "Semiconductors II-VI"

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Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible
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Dietl, Tomasz, and Hideo Ohno. "Ferromagnetic III–V and II–VI Semiconductors." MRS Bulletin 28, no. 10 (2003): 714–19. http://dx.doi.org/10.1557/mrs2003.211.

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AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds
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Miles, R. H., J. O. McCaldin, and T. C. McGill. "Superlattices of II–VI semiconductors." Journal of Crystal Growth 85, no. 1-2 (1987): 188–93. http://dx.doi.org/10.1016/0022-0248(87)90221-1.

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Akimoto, K., H. Okuyama, M. Ikeda, and Y. Mori. "Isoelectronic oxygen in II‐VI semiconductors." Applied Physics Letters 60, no. 1 (1992): 91–93. http://dx.doi.org/10.1063/1.107385.

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Gunshor, Robert L., Masakazu Kobayashi, and Arto V. Nurmikko. "II – VI semiconductors come of age." Physics World 5, no. 3 (1992): 46–49. http://dx.doi.org/10.1088/2058-7058/5/3/31.

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Razbirin, B. S., D. K. Nel'son, J. Erland, K. H. Pantke, V. G. Lyssenko, and J. M. Hvan. "Bound biexcitons in II–VI semiconductors." Solid State Communications 93, no. 1 (1995): 65–70. http://dx.doi.org/10.1016/0038-1098(94)00543-5.

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Twardowski, A. "Cr-Based II-VI Semimagnetic Semiconductors." Acta Physica Polonica A 87, no. 1 (1995): 85–93. http://dx.doi.org/10.12693/aphyspola.87.85.

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Kalt, H., S. Wachter, D. Lüerssen, and J. Hoffmann. "Ultrafast Phenomena in II-VI Semiconductors." Acta Physica Polonica A 94, no. 2 (1998): 139–46. http://dx.doi.org/10.12693/aphyspola.94.139.

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Sohn, S. H., D. G. Hyun, M. Noma, S. Hosomi, and Y. Hamakawa. "Effective charges in II–VI semiconductors." Journal of Crystal Growth 117, no. 1-4 (1992): 907–12. http://dx.doi.org/10.1016/0022-0248(92)90882-j.

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Watkins, G. D. "Intrinsic defects in II–VI semiconductors." Journal of Crystal Growth 159, no. 1-4 (1996): 338–44. http://dx.doi.org/10.1016/0022-0248(95)00680-x.

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Dissertations / Theses on the topic "Semiconductors II-VI"

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Claybourn, M. "Transient spectroscopy of II-VI semiconductors." Thesis, Durham University, 1985. http://etheses.dur.ac.uk/9298/.

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DLTS, ODLTS and DLOS have been used to characterise the main deep level trapping centres in some II-VI semiconductors; these were single crystal CdS, (ZnCd)S, CdSe, CdTe and ZnS, and polycrystalline CdS films. Undoped, single crystal CdS contained four electron traps as detected by DLTS, at 0.29eV, 0.41eV, 0.61eV and 0.74eV below the conduction band (CB). The first two were observed in all samples and were due to native defects. The two states of highest energy were found only in material that had been annealed in S or Cd vapours. The 0.61ev level could be photoinduced by illumination at photo
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Boyce, Paul John. "Raman spectroscopy of II-VI semiconductors." Thesis, University of East Anglia, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357210.

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Wasenczuk, Adam. "Defects in epitaxial II-VI semiconductors." Thesis, University of Southampton, 1998. https://eprints.soton.ac.uk/426603/.

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Cozzarini, Luca. "Nanomaterials based on II-VI Semiconductors." Doctoral thesis, Università degli studi di Trieste, 2012. http://hdl.handle.net/10077/7359.

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2010/2011<br>This thesis describes: (i) synthesis and characterization of colloidal nanocrystals of II-VI semiconductor compounds; (II) development of two novel materials using such nanocrystals as “building blocks”: (IIa) a nanocrystals/polymer composite, to be used as phosphor in LED-based lighting devices; (IIb) an inorganic, nano-structured multiphase material, showing a promising geometry as an electronic intermediate band material. Different typologies of nanocrystals (single-phase, alloyed or core-shells) were successfully synthesized using air-stable, safe reagents. Their optical pr
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Milnes, James. "The piezoelectric effect in II-VI semiconductors." Thesis, Heriot-Watt University, 1999. http://hdl.handle.net/10399/617.

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Luo, Ming. "Transition-metal ions in II-VI semiconductors ZnSe and ZnTe /." Morgantown, W. Va. : [West Virginia University Libraries], 2006. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=4630.

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Thesis (Ph. D.)--West Virginia University, 2006.<br>Title from document title page. Document formatted into pages; contains xiv, 141 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 135-141).
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Meredith, Wyn. "II-VI blue emitting lasers and VCSELs." Thesis, Heriot-Watt University, 1997. http://hdl.handle.net/10399/695.

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Cairns, John William. "The interfaces of II-VI/III-V semiconductors." Thesis, Cardiff University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296381.

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Gabriel, Tim. "The electrodeposition of mesoporous type II-VI semiconductors." Thesis, University of Southampton, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438733.

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Stevens, Christopher John. "Time-resolved spectroscopy of excitons in II-VI heterostructures." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308909.

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Books on the topic "Semiconductors II-VI"

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Boyce, Paul John. Raman spectroscopy of II-VI semiconductors. University of East Anglia, 1992.

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1921-, Bhargava Rameshwar Nath, ed. Properties of wide bandgap II-VI semiconductors. INSPEC, Institute of Electrical Engineers, 1997.

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Bhargava, Rameshwar. Properties of wide bandgap II-VI semiconductors. IEE, INSPEC, 2006.

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L, Gunshor Robert, and Nurmikko Arto V, eds. II-VI blue/green light emitters: Device physics and epitaxial growth. Academic Press, 1997.

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Adachi, Sadao. Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Wiley, 2009.

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International Conference on II-VI Compounds (4th 1989 Berlin). II-VI compounds 1989: Proceedings of the Fourth International Conference on II-VI Compounds, Berlin (West), 17-22 September 1989. North-Holland, 1990.

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International Conference on II-VI Compounds (4th 1989 Berlin). II-VI compounds 1989: Proceedings of the Fourth International Conference on II-VI Compounds, Berlin (West), 17-22 September 1989. North-Holland, 1990.

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International, Conference on II-VI Compounds (5th 1991 Okayama Japan). II-VI compounds 1991: Proceedings of the Fifth International Conference on II-VI Compounds, Tamano, Okayama, Japan, 8-13 September 1991. North-Holland, 1992.

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International Conference on II-VI Compounds (5th 1991 Okayama, Japan). II-VI compounds 1991: Proceedings of the Fifth International Conference on II-VI Compounds, Tamano, Okayama, Japan, 8-13 September 1991. North-Holland, 1992.

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International Conference on II-VI Compounds (9th 1999 Kyoto, Japan). II-VI compounds 1999: Proceedings of the Ninth International Conference on II-VI Compounds, Kyoto, Japan, 1-5 November 1999. Elsevier, 2000.

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Book chapters on the topic "Semiconductors II-VI"

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Krishnan, Bindu, Sadasivan Shaji, M. C. Acosta-Enríquez, et al. "Group II–VI Semiconductors." In Semiconductors. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-02171-9_7.

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Feng, Zhe Chuan. "II-VI Semiconductors." In Raman Scattering on Emerging Semiconductors and Oxides. CRC Press, 2024. http://dx.doi.org/10.1201/9781032644912-6.

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Madelung, Otfried. "II-VI compounds." In Semiconductors: Data Handbook. Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18865-7_4.

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Benoit à la Guillaume, C. "II-Fe-VI Semimagnetic Semiconductors." In Semimagnetic Semiconductors and Diluted Magnetic Semiconductors. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3776-2_8.

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Baranowski, J. M. "Chromium in II-VI Compounds." In Deep Centers in Semiconductors. CRC Press, 2024. https://doi.org/10.1201/9781003580409-13.

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Kulkarni, S. K., Manisha Kundu, and Pramod Borse. "Nanoparticles of II — VI Semiconductors." In Frontiers in Materials Modelling and Design. Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-80478-6_24.

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Kurban, Mustafa, Yusuf Şimşek, and Şakir Erkoç. "II-VI Semiconductors Bandgap Engineering." In Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-19531-0_5.

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de Melo, Osvaldo. "Introduction in II-VI Semiconductors." In Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-19531-0_1.

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Capper, Peter. "Narrow Bandgap II-VI Semiconductors: Growth." In Springer Handbook of Electronic and Photonic Materials. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_15.

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Baker, Ian M. "II-VI Narrow Bandgap Semiconductors: Optoelectronics." In Springer Handbook of Electronic and Photonic Materials. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_34.

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Conference papers on the topic "Semiconductors II-VI"

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Schaake, Herbert F. "TEM Characterization of II-VI Compound Semiconductors." In 1988 Semiconductor Symposium, edited by Orest J. Glembocki, Fred H. Pollak, and Fernando A. Ponce. SPIE, 1988. http://dx.doi.org/10.1117/12.947430.

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Mullin, John B., D. J. Cole-Hamilton, A. E. D. McQueen, and J. E. Hails. "Developments in precursors for II-VI semiconductors." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24354.

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Tomashik, V. N., V. I. Grytsiv, Z. F. Tomashik, and O. V. Seritsan. "Interaction of II-VI, III-VI and IV-VI group semiconductors with metals." In Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov and Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280466.

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Zogg, Hans, A. N. Tiwari, Stefan Blunier, Clau Maissen, and Jiri Masek. "Heteroepitaxy of II-VI and IV-VI semiconductors on Si substrates." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24409.

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Glass, A. M., R. D. Feldman, D. W. Kisker, P. M. Bridenbaugh, and P. M. Mankiewich. "Low Temperature Epitaxial Growth of II-VI Semiconductors." In 1986 International Symposium/Innsbruck, edited by Jean Besson. SPIE, 1986. http://dx.doi.org/10.1117/12.938551.

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Perrier, Gerard. "Close-spaced vapor transport of II-VI semiconductors." In San Diego, '91, San Diego, CA, edited by Carl M. Lampert and Claes G. Granqvist. SPIE, 1991. http://dx.doi.org/10.1117/12.49228.

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de León, J. Mustre. "Photoinduced local lattice distortions in II-VI semiconductors." In Physics in local lattice distortions. AIP, 2001. http://dx.doi.org/10.1063/1.1363094.

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Kar, Ajoy K., and A. Tookey. "Ultrafast coherent spectroscopy in II-VI widegap semiconductors." In Selected Papers from the International Conference on Optics and Optoelectronics, edited by Kehar Singh, Om P. Nijhawan, Arun K. Gupta, and A. K. Musla. SPIE, 1999. http://dx.doi.org/10.1117/12.346781.

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Hvam, Jorn M., Claus Doernfeld, and Colin R. Paton. "Coherent nonlinear optical resonances in II-VI semiconductors." In OE/LASE '90, 14-19 Jan., Los Angeles, CA, edited by Nasser Peyghambarian. SPIE, 1990. http://dx.doi.org/10.1117/12.18121.

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Nurmikko, Arto V., and Robert L. Gunshor. "Quantum-confined structures and lasers in II-VI semiconductors in the blue-green." In Semiconductors '92, edited by Gottfried H. Doehler and Emil S. Koteles. SPIE, 1992. http://dx.doi.org/10.1117/12.137611.

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Reports on the topic "Semiconductors II-VI"

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Bhat, Ishwara B. Epitaxial Lateral Overgrowth of II-VI Semiconductors. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada389229.

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Zhang, Yong-Hang. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ada622826.

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Kelley, David F. Charge separation sensitized by advanced II-VI semiconductor nanostructures. Office of Scientific and Technical Information (OSTI), 2017. http://dx.doi.org/10.2172/1350954.

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Girndt, A., F. Jahnke, A. Knorr, S. W. Koch, and W. W. Chow. Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/486170.

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Semendy, Fred, Neal Bambha, Marie C. Tamargo, A. Cavus, and L. Zeng. Etch Pit Studies of II-VI-Wide Bandgap Semiconductor Materials ZnSe, ZnCdSe, and ZnCdMgSe Grown on InP. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada372188.

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Metzger, Wyatt K. Photovoltaic Cells Employing Group II-VI Compound Semiconductor Active Layers: Cooperative Research and Development Final Report, CRADA Number CRD-09-325. Office of Scientific and Technical Information (OSTI), 2018. http://dx.doi.org/10.2172/1475129.

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