Academic literature on the topic 'Semiconductors Nanostructured materials Quantum dots'

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Journal articles on the topic "Semiconductors Nanostructured materials Quantum dots"

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Thangaraj, Baskar, Pravin R. Solomon, and Srinivasan Ranganathan. "Synthesis of Carbon Quantum Dots with Special Reference to Biomass as a Source - A Review." Current Pharmaceutical Design 25, no. 13 (August 16, 2019): 1455–76. http://dx.doi.org/10.2174/1381612825666190618154518.

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Quantum dots (QDs) have received much attention due to their extraordinary optical application in medical diagnostics, optoelectronics and in energy storage devices. The most conventional QDs are based on semiconductors that comprise heavy metals whose applications are limited due to toxicity and potential environmental hazard. Of late, researchers are focusing on carbon-based quantum dots, which have recently emerged as a new family of zero-dimensional nanostructured materials. They are spherical in shape with a size below 10 nm and exhibit excitation-wavelength-dependent photoluminescence (PL). Carbon quantum dots (CQDs) have unique optical, photoluminescence and electrochemical properties. They are environment-friendly with low toxicity as compared to toxic heavy metal quantum dots. Generally, CQDs are derived from chemical precursor materials, but recently researchers have focused their attention on the production of CQDs from waste biomass materials due to the economic and environmental exigency. In this review, recent advances in the synthesis of CQDs from waste biomass materials, functionalization and modulation of CQDs and their potential application of biosensing are focused. This review also brings out some challenges and future perspectives for developing smart biosensing gadgets based on CQDs.
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Omr, Hossam A. E., Mark W. Horn, and Hyeonseok Lee. "Low-Dimensional Nanostructured Photocatalysts for Efficient CO2 Conversion into Solar Fuels." Catalysts 11, no. 4 (March 25, 2021): 418. http://dx.doi.org/10.3390/catal11040418.

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The ongoing energy crisis and global warming caused by the massive usage of fossil fuels and emission of CO2 into atmosphere continue to motivate researchers to investigate possible solutions. The conversion of CO2 into value-added solar fuels by photocatalysts has been suggested as an intriguing solution to simultaneously mitigate global warming and provide a source of energy in an environmentally friendly manner. There has been considerable effort for nearly four decades investigating the performance of CO2 conversion by photocatalysts, much of which has focused on structure or materials modification. In particular, the application of low-dimensional structures for photocatalysts is a promising pathway. Depending on the materials and fabrication methods, low-dimensional nanomaterials can be formed in zero dimensional structures such as quantum dots, one-dimensional structures such as nanowires, nanotubes, nanobelts, and nanorods, and two-dimensional structures such as nanosheets and thin films. These nanostructures increase the effective surface area and possess unique electrical and optical properties, including the quantum confinement effect in semiconductors or the localized surface plasmon resonance effect in noble metals at the nanoscale. These unique properties can play a vital role in enhancing the performance of photocatalytic CO2 conversion into solar fuels by engineering the nanostructures. In this review, we provide an overview of photocatalytic CO2 conversion and especially focus on nanostructured photocatalysts. The fundamental mechanism of photocatalytic CO2 conversion is discussed and recent progresses of low-dimensional photocatalysts for efficient conversion of CO2 into solar fuels are presented.
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Nötzel, Richard. "InN/InGaN quantum dot electrochemical devices: new solutions for energy and health." National Science Review 4, no. 2 (January 7, 2017): 184–95. http://dx.doi.org/10.1093/nsr/nww101.

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AbstractA review is given of the exceptional electrochemical performance of epitaxial InN/InGaN quantum dots (QDs) as photoelectrodes for solar hydrogen generation by water splitting, as biosensor transducers and as anion-selective electrodes, and they are also evaluated as supercapacitor electrodes. The performance is benchmarked against the best performances of other reported materials and nanostructures. A model based on the unique interplay of surface and quantum properties is put forward to understand the boost of catalytic activity and anion selectivity interlinking quantum nanostructure physics with electrochemistry and catalysis. Of equal impact is the direct growth on cheap Si substrates without any buffer layers, allowing novel device designs and integration with Si technology. This makes the InN/InGaN QDs viable, opening up new application fields for III-nitride semiconductors.
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KNOLL, WOLFGANG, MING-YONG HAN, XINHENG LI, JOSE-LUIS HERNANDEZ-LOPEZ, ABHIJIT MANNA, KLAUS MÜLLEN, FUMIO NAKAMURA, et al. "NANOSCOPIC BUILDING BLOCKS FROM POLYMERS, METALS, AND SEMICONDUCTORS FOR HYBRID ARCHITECTURES." Journal of Nonlinear Optical Physics & Materials 13, no. 02 (June 2004): 229–41. http://dx.doi.org/10.1142/s0218863504001815.

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This paper describes some of our efforts in the area of nanostructured thin film architectures. The resulting interfacial hybrid assemblies are built from (1) organic/polymeric objects based on dendrimer systems, from (2) surface-functionalized Au nanoparticles, and (3) from a variety of semiconducting quantum dots. Dendrimers as polymeric building blocks with a strictly monodisperse particle size distribution in the nanometer range can be functionalized in the core, the scaffold, or at the periphery, thus offering interesting hybrid materials for a wide range of applications. The combination with Au clusters and their local surface plasmon resonances suggests new strategies for optoelectronic devices or unconventional bio-sensor platforms. The possibility of tuning the luminescent properties of semiconducting nanoparticles by size or compositional bandgap engineering complements the assembly kit with building blocks for supramolecular thin film nanocomposite materials.
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Jin, Ho, Sukyung Choi, Hyo Joong Lee, and Sungjee Kim. "Layer-by-Layer Assemblies of Semiconductor Quantum Dots for Nanostructured Photovoltaic Devices." Journal of Physical Chemistry Letters 4, no. 15 (July 15, 2013): 2461–70. http://dx.doi.org/10.1021/jz400910x.

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Vigil, Elena. "Nanostructured Solar Cells." Key Engineering Materials 444 (July 2010): 229–54. http://dx.doi.org/10.4028/www.scientific.net/kem.444.229.

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Novel types of solar cells based on nanostructured materials are intensively studied because of their prospective applications and interesting new working principle – essentially due to the nanomaterials used They have evolved from dye sensitized solar cells (DSSC) in the quest to improve their behavior and characteristics. Their nanocrystals (ca. 10-50 nm) do not generally show the confinement effect present in quantum dots of size ca. 1-10nm where electron wave functions are strongly confined originating changes in the band structure. Nonetheless, the nanocrystalline character of the semiconductor used determines a different working principle; which is explained, although it is not completely clear so far,. Different solid nanostructured solar cells are briefly reviewed together with research trends. Finally, the influence of the photoelectrode electron-extracting contact is analyzed.
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Kim, M. J., L. C. Liu, S. H. Risbud, and R. W. Carpenter. "Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 728–29. http://dx.doi.org/10.1017/s0424820100176770.

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When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.
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Chen, G., and A. Shakouri. "Heat Transfer in Nanostructures for Solid-State Energy Conversion." Journal of Heat Transfer 124, no. 2 (November 20, 2001): 242–52. http://dx.doi.org/10.1115/1.1448331.

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Solid-state energy conversion technologies such as thermoelectric and thermionic refrigeration and power generation require materials with low thermal conductivity but good electrical conductivity and Seebeck coefficient, which are difficult to realize in bulk semiconductors. Nanostructures such as superlattices, quantum wires, and quantum dots provide alternative approaches to improve the solid-state energy conversion efficiency through size and interface effects on the electron and phonon transport. In this review, we discuss recent research and progress using nanostructures for solid-state energy conversion. The emphasis is placed on fundamental issues that distinguish energy transport and conversion between nanoscale and macroscale, as well as heat transfer issues related to device development and property characterization.
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Prokes, S. M., and Kang L. Wang. "Novel Methods of Nanoscale Wire Formation." MRS Bulletin 24, no. 8 (August 1999): 13–19. http://dx.doi.org/10.1557/s0883769400052842.

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In recent years, tremendous interest has been generated in the fabrication and characterization of nanoscale structures such as quantum dots and wires. For example, there is interest in the electronic, magnetic, mechanical, and chemical properties of materials with reduced dimensions. In the case of nanoscale semiconductors, quantum effects are expected to play an increasingly prominent role in the physics of nanostructures, and a new class of electronic and optoelectronic devices may be possible. In addition to new and interesting physics, the formation and characterization of nanoscale magnetic structures could result in higher-density storage capacity in hard disks and optical-recording media. Likewise, phonon confinement leads to a drastic reduction of thermal conductivity and can be used to improve the performance of thermoelectric devices.In 1980, H. Sakaki predicted theoretically that quantum wires may have applications in high-performance transport devices, due to their sawtoothlike density of states (E1/2), where E is the electron energy. Since then, most quantum wires have been made by fabricating a gratinglike gate on top of a two-dimensional (2D) electron gas contained in a semiconductor heterojunction or in metal-oxide-semiconductor structures. By applying a negative gate voltage to the system, its structure can be changed from a 2D to a one-dimensional (1D) regime, where electron confinement is achieved by an electrostatic confining potential. It was not until recently that “physical” semiconductor quantum wires with the demonstrated 1D confinement by physical boundaries began to be fabricated.
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OSTRIKOV, KEN, and SHUYAN XU. "PLASMA-AIDED NANOFABRICATION: "PLASMA-BUILDING BLOCK" APPROACH." International Journal of Nanoscience 05, no. 04n05 (August 2006): 439–44. http://dx.doi.org/10.1142/s0219581x06004607.

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Unique features and benefits of the plasma-aided nanofabrication are considered by using the "plasma-building block" approach, which is based on plasma diagnostics and nanofilm characterization, cross-referenced by numerical simulation of generation and dynamics of building blocks in the gas phase, their interaction with nanostructured surfaces, and ab initio simulation of chemical structure of relevant nanoassemblies. The examples include carbon nanotip microemitter structures, semiconductor quantum dots and nanowires synthesized in the integrated plasma-aided nanofabrication facility.
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Dissertations / Theses on the topic "Semiconductors Nanostructured materials Quantum dots"

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Wen, Xiaoming. "Ultrafast spectroscopy of semiconductor nanostructures." Australasian Digital Thesis Program, 2007. http://adt.lib.swin.edu.au/public/adt-VSWT20070426.110438/index.html.

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Thesis (PhD) - Swinburne University of Technology, Centre for Atom Optics and Ultrafast Spectroscopy, 2007.
Thesis submitted in fulfilment of the requirements for the degree of Doctor of Philosophy, Centre for Atom Optics and Ultrafast Spectroscopy, Swinburne University of Technology, 2007. Typescript. Bibliography: p. 122-144.
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Sabathil, Matthias. "Opto-electronic and quantum transport properties of semiconductor nanostructures /." Garching : Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München, 2005. http://www.loc.gov/catdir/toc/fy1002/2008380872.html.

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Little, Reginald Bernard. "The synthesis and characterization of some II-VI semiconductor quantum dots, quantum shells and quantum wells." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/30573.

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Zedan, Abdallah. "GRAPHENE-BASED SEMICONDUCTOR AND METALLIC NANOSTRUCTURED MATERIALS." VCU Scholars Compass, 2013. http://scholarscompass.vcu.edu/etd/457.

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Exciting periods of scientific research are often associated with discoveries of novel materials. Such period was brought about by the successful preparation of graphene which is a 2D allotrope of carbon with remarkable electronic, optical and mechanical properties. Functional graphene-based nanocomposites have great promise for applications in various fields such as energy conversion, opteoelectronics, solar cells, sensing, catalysis and biomedicine. Herein, microwave and laser-assisted synthetic approaches were developed for decorating graphene with various semiconductor, metallic or magnetic nanostructures of controlled size and shape. We developed a scalable microwave irradiation method for the synthesis of graphene decorated with CdSe nanocrystals of controlled size, shape and crystalline structure. The efficient quenching of photoluminescence from the CdSe nanocrystals by graphene has been explored. The results provide a new approach for exploring the size-tunable optical properties of CdSe nanocrystals supported on graphene which could have important implications for energy conversion applications. We also extended this approach to the synthesis of Au-ceria-graphene nanocomposites. The synthesis is facilely conducted at mild conditions using ethylenediamine as a solvent. Results reveal significant CO conversion percentages between 60-70% at ambient temperatures. Au nanostructures have received significant attention because of the feasibility to tune their optical properties by changing size or shape. The coupling of the photothermal effects of these Au nanostructures of controlled size and shape with GO nanosheets dispersed in water is demonstrated. Our results indicate that the enhanced photothermal energy conversion of the Au-GO suspensions could to lead to a remarkable increase in the heating efficiency of the laser-induced melting and size reduction of Au nanostructures. The Au-graphene nanocomposites are potential materials for photothermolysis, thermochemical and thermomechanical applications. We developed a facile method for decorating graphene with magnetite nanocrystals of various shapes (namely, spheres, cubes and prisms) by the microwave-assisted-reduction of iron acetylacetonate in benzyl ether. The shape control was achieved by tuning the mole ratio between the oleic acid and the oleyamine. The structural, morphological and physical properties of graphene-based nanocomposites described herein were studied using standard characterization tools such as TEM, SEM, UV-Vis and PL spectroscopy, powder X-ray diffraction, XPS and Raman spectroscopy.
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Cheng, Cheng. "Semiconductor colloidal quantum dots for photovoltaic applications." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:07baccd0-2098-4306-8a9a-49160ec6a15a.

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This thesis studies lead suphide (PbS) colloidal quantum dots and their photovoltaic applications. Different sizes of PbS QDs were synthesised and characterised using absorption spectroscopy and transmission electron microscopes. PbS QD Schottky junction devices were fabricated with AM1.5 power conversion efficiency up to 1.8 %. The Schottky junction geometry limits the device performance. A semiconductor heterojunction using ZnO as an electron acceptor was built and the device efficiency increased to 3%. By studying the light absorption and charge extraction profile of the bilayer device, the absorber layer has a charge extraction dead zone which is beyond the reach of the built-in electric field. Therefore, strategies to create a QD bulk heterojunction were considered to address this issue by distributing the junction interface throughout the absorber layer. However, the charge separation mechanism of the QD heterojunction is not clearly understood: whether it operates as an excitonic or a depleted p-n junction, as the junction operating mechanism determines the scale of phase separation in the bulk morphology. This study shows a transitional behaviour of the PbS/ZnO heterojunction from excitonic to depletion by increasing the doping density of ZnO. To utilise the excitonic mechanism, a PbS/ZnO nanocrystal bulk heterojunction was created by blending the two nanocrystals in solution such that a large interface between the two materials could facilitate fast exciton dissociation. However, the devices show poor performance due to a coarse morphology and formation of germinate pairs. To create a bulk heterojunction where a built-in electric field could assist the charge separation, a TiO2 porous structure with the pore size matching with the depletion width was fabricated and successfully in-filled by PbS QDs. The porous device produces 5.7% power conversion efficiency, among one of the highest in literature. The enhancement comes from increased light absorption and suppression of charge recombination.
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Zhu, Ronghua (Richard). "Atomistic Simulation of Nanostructured Materials." University of Akron / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=akron1164059775.

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Fu, Kai. "Growth Dynamics of Semiconductor Nanostructures by MOCVD." Doctoral thesis, KTH, Teoretisk kemi (stängd 20110512), 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-11447.

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Semiconductors and related low-dimensional nanostructures are extremely important in the modern world. They have been extensively studied and applied in industry/military areas such as ultraviolet optoelectronics, light emitting diodes, quantum-dot photodetectors and lasers. The knowledge of growth dynamics of semiconductor nanostructures by metalorganic chemical vapour deposition (MOCVD) is very important then. MOCVD, which is widely applied in industry, is a kind of chemical vapour deposition method of epitaxial growth for compound semiconductors. In this method, one or several of the precursors are metalorganics which contain the required elements for the deposit materials. Theoretical studies of growth mechanism by MOCVD from a realistic reactor dimension down to atomic dimensions can give fundamental guidelines to the experiment, optimize the growth conditions and improve the quality of the semiconductor-nanostructure-based devices. Two main types of study methods are applied in the present thesis in order to understand the growth dynamics of semiconductor nanostructures at the atomic level: (1) Kinetic Monte Carlo method which was adopted to simulate film growths such as diamond, Si, GaAs and InP using the chemical vapor deposition method; (2) Computational fluid dynamics method to study the distribution of species and temperature in the reactor dimension. The strain energy is introduced by short-range valence-force-field method in order to study the growth process of the hetero epitaxy. The Monte Carlo studies show that the GaN film grows on GaN substrate in a two-dimensional step mode because there is no strain over the surface during homoepitaxial growth. However, the growth of self-assembled GaSb quantum dots (QDs) on GaAs substrate follows strain-induced Stranski-Krastanov mode. The formation of GaSb nanostructures such as nanostrips and nanorings could be determined by the geometries of the initial seeds on the surface. Furthermore, the growth rate and aspect ratio of the GaSb QD are largely determined by the strain field distribution on the growth surface.
QC 20100713
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Yao, Lan. "Fabrication, characterization and application of the novel bionanomaterials /." View online ; access limited to URI, 2008. http://0-digitalcommons.uri.edu.helin.uri.edu/dissertations/AAI3328736.

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Bhagyaraj, Sneha. "Green synthesis, characterization and applications of cdse based core-shell quantum dots and silver nanocomposites." Thesis, Cape Peninsula University of Technology, 2015. http://hdl.handle.net/20.500.11838/2318.

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Thesis (DTech (Chemistry))--Cape Peninsula University of Technology, 2015.
Researchers around the world are now focusing on inculcating green chemistry principles in all level of research especially in nanotechnology to make these processes environmental friendly. Nanoparticles synthesized using green chemistry principles has several advantages such as simplicity, cost effectiveness, compatibility for biomedical and pharmaceutical applications and large scale production for commercial purpose. Based on this background, this thesis present the design, synthesis, characterization and applications of various CdSe based core-shell and core-multi shell quantum dots (QDs), quantum dots-polymer nanocomposites, silver nanoparticles (Ag-NPs) and silver nanocomposites via completely green methods. Various QDs like CdSe/CdS/ZnS and CdSe/ZnS, and there polymer nanocomposites were successfully synthesized and characterized. The high quality of the as-synthesized nanoparticles was confirmed using absorption and photoluminescence (PL) spectroscopy, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, transmission electron microscopy (TEM) and high resolution TEM (HRTEM). Detailed optical and morphological characterization showed that the CdSe/CdS/ZnS core-multi shell QDs were small, monodispersed with high fluorescent intensity and narrow emission width. The CdSe/CdS/ZnS core multi-shell QDs were dispersed in epoxy polymer matrix to obtain fluorescent epoxy nanocomposite. The brillouin spectroscopy analysis revealed that the presence of QDs inside polymer composite reduces the acoustic frequency of the polymer. Highly fluorescent CdSe/ZnS core-shell QDs was also synthesized and dispersed in PMMA polymer matrix to prepare bright yellow emitting nanocomposite film. The as-synthesized QDs also undergone surface exchange to convert the organically soluble nanomaterial to water soluble. After the ligand exchange, the morphology and above all the fluorescence property of the quantum dots remained intact. In another approach, HDA-capped CdSe nanoparticles were synthesized in the absence of an inert gas followed by dispersion in polymer polycaprolactone to produce orange light emitting electrospun polymer nanocomposite nanofibre.
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Angell, Joshua James. "SYNTHESIS AND CHARACTERIZATION OF CdSe-ZnS CORE-SHELL QUANTUM DOTS FOR INCREASED QUANTUM YIELD." DigitalCommons@CalPoly, 2011. https://digitalcommons.calpoly.edu/theses/594.

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Quantum dots are semiconductor nanocrystals that have tunable emission through changes in their size. Producing bright, efficient quantum dots with stable fluorescence is important for using them in applications in lighting, photovoltaics, and biological imaging. This study aimed to optimize the process for coating CdSe quantum dots (which are colloidally suspended in octadecene) with a ZnS shell through the pyrolysis of organometallic precursors to increase their fluorescence and stability. This process was optimized by determining the ZnS shell thickness between 0.53 and 5.47 monolayers and the Zn:S ratio in the precursor solution between 0.23:1 and 1.6:1 that maximized the relative photoluminescence quantum yield (PLQY) while maintaining a small size dispersion and minimizing the shift in the center wavelength (CWL) of the fluorescence curve. The process that was developed introduced a greater amount of control in the coating procedure than previously available at Cal Poly. Quantum yield was observed to increase with increasing shell thickness until 3 monolayers, after which quantum yield decreased and the likelihood of flocculation of the colloid increased. The quantum yield also increased with increasing Zn:S ratio, possibly indicating that zinc atoms may substitute for missing cadmium atoms at the CdSe surface. The full-width at half-maximum (FWHM) of the fluorescence spectrum did not change more than ±5 nm due to the coating process, indicating that a small size dispersion was maintained. The center wavelength (CWL) of the fluorescence spectrum red shifted less than 35 nm on average, with CWL shifts tending to decrease with increasing Zn:S ratio and larger CdSe particle size. The highest quantum yield was achieved by using a Zn:S ratio of 1.37:1 in the precursor solution and a ZnS shell thickness of approximately 3 monolayers, which had a red shift of less than 30 nm and a change in FWHM of ±3 nm. Photostability increased with ZnS coating as well. Intense UV irradiation over 12 hours caused dissolution of CdSe samples, while ZnS coated samples flocculated but remained fluorescent. Atomic absorption spectroscopy was investigated as a method for determining the thickness of the ZnS shell, and it was concluded that improved sample preparation techniques, such as further purification and complete removal of unreacted precursors, could make this testing method viable for obtaining quantitative results in conjunction with other methods. However, the ZnS coating process is subject to variations due to factors that were not controlled, such as slight variations in temperature, injection speed, and rate and degree of precursor decomposition, resulting in standard deviations in quantum yield of up to half of the mean and flocculation of some samples, indicating a need for as much process control as possible.
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Books on the topic "Semiconductors Nanostructured materials Quantum dots"

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Sabathil, Matthias. Opto-electronic and quantum transport properties of semiconductor nanostructures. Garching: Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München, 2005.

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European Materials Research Society. Meeting. Thin films epitaxial growth and nanostructures: Proceedings of the EMRS Spring Conference, Strasbourg, France, June 16-19, 1998. Amsterdam: Elsevier, 1998.

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International Conference on Modulated Semiconductor Structures (11th 2003 Nara, Japan). Proceedings of the 11th International Conference on Modulated Semiconductor Structures: MSS11 : held in Nara, Japan, 14-18, July 2003. Edited by Arakawa Yasuhiko. Amsterdam, The Netherlands: Elsevier, 2004.

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Eyink, Kurt G., Frank Szmulowicz, and Diana Lynne Huffaker. Quantum dots and nanostructures: Synthesis, characterization, and modeling VII : 24-25 and 27 January 2010, San Francisco, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2010.

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1969-, Gehrig Edeltraud, ed. Photonics of quantum-dot nanomaterials and devices: Theory and modelling. London: Imperial College Press, 2010.

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Takafumi, Yao, Woo Jong-Chun, Kikai Shinkō Kyōkai, and Hanʼguk Kwahak Chaedan, eds. Physics and applications of semiconductor quantum structures: Proceedings of the International Workshop on Physics and Applications of Semiconductor Quantum Structures (Asian Science Seminar), Cheju Island, Korea, October 18-23, 1998. Bristol, U.K: Institute of Physics Pub., 2001.

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International, Workshop on Physics and Applications of Semiconductor Quantum Structures (1998 Cheju Island Korea). Physics and applications of semiconductor quantum structures: Proceedings of the International Workshop on Physics and Applications of Semiconductor Quantum Structures (Asian Science Seminar), Cheju Island, Korea, October 18-23, 1998. Bristol, U.K: Institute of Physics Pub., 2001.

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Eyink, Kurt G. Quantum dots, particles, and nanoclusters VI: 25-28 January 2009, San Jose, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2009.

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Eyink, Kurt G. Quantum dots, particles, and nanoclusters VI: 25-28 January 2009, San Jose, California, United States. Bellingham, Wash: SPIE, 2009.

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Eyink, Kurt G. Quantum dots, particles, and nanoclusters V: 21 January, 2008, San Jose, California, USA. Edited by Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2008.

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Book chapters on the topic "Semiconductors Nanostructured materials Quantum dots"

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Král, K., Z. Khás, P. Zdeněk, M. Čerňanský, and C. Y. Lin. "Relaxation of Electron Energy in Polar Semiconductor Double Quantum Dots." In Molecular Low Dimensional and Nanostructured Materials for Advanced Applications, 267–71. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0349-0_29.

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Goicoechea, Javier, Francisco J. Arregui, and Ignacio R. Matias. "Quantum Dots for Sensing." In Sensors Based on Nanostructured Materials, 1–51. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-77753-5_6.

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Kipp, Tobias, Christian Schüller, and Detlef Heitmann. "Electronic Raman Spectroscopy of Quantum Dots." In Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals, 139–63. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10553-1_6.

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Schramm, Andreas, Christiane Konetzni, and Wolfgang Hansen. "Capacitance Spectroscopy on Self-Assembled Quantum Dots." In Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals, 51–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10553-1_3.

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Maruccio, Giuseppe, and Roland Wiesendanger. "Scanning Tunneling Spectroscopy of Semiconductor Quantum Dots and Nanocrystals." In Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals, 183–216. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10553-1_8.

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Ghatak, Kamakhya Prasad, and Sitangshu Bhattacharya. "Thermoelectric Power in Quantum Dots Under Large Magnetic Field." In Thermoelectric Power in Nanostructured Materials, 3–94. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10571-5_1.

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Heyn, Christian, Andrea Stemmann, and Wolfgang Hansen. "Self-Assembly of Quantum Dots and Rings on Semiconductor Surfaces." In Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals, 1–24. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10553-1_1.

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Marković, Z. M., and B. M. Todorović Marković. "Treating of Aquatic Pollution by Carbon Quantum Dots." In Nanostructured Materials for Treating Aquatic Pollution, 121–45. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-33745-2_5.

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Yükselici, M. H., A. Aşıkoğlu Bozkurt, Ç. Allahverdi, Z. Nassar, D. Bulut, B. Can Ömür, M. K. Torun, and A. T. İnce. "Optical and Structural Properties of Quantum Dots." In Low-Dimensional and Nanostructured Materials and Devices, 327–50. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-25340-4_14.

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Hatipoglu, Manolya Kukut, Seda Kelestemur, and Mustafa Culha. "Synthesis and Biological Applications of Quantum Dots." In Low-Dimensional and Nanostructured Materials and Devices, 505–34. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-25340-4_20.

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Conference papers on the topic "Semiconductors Nanostructured materials Quantum dots"

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Chekhovich, Evgeny A. "Non-invasive structural analysis of InP quantum dots and other nanostructures using nuclear magnetic resonance." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528545.

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Takagahara, Toshihide. "Theory of Spatially Separated Carrier Multiplication in Semiconductor Quantum Dots." In Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/pv.2014.ptu4b.4.

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Anchala, S. P. Purohit, K. C. Mathur, Dinesh K. Aswal, and Anil K. Debnath. "Photoabsorption In Si Semiconductor Quantum Dot Nanostructure." In INTERNATIONAL CONFERENCE ON PHYSICS OF EMERGING FUNCTIONAL MATERIALS (PEFM-2010). AIP, 2010. http://dx.doi.org/10.1063/1.3530500.

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Urbanczyk, A., F. W. M. van Otten, and R. Nötzel. "Epitaxial metal nanocrystal-semiconductor quantum dot plasmonic nanostructures." In 2011 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2011. http://dx.doi.org/10.7567/ssdm.2011.km-5-1.

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Lam, K. T. "Fractal Dimension and Multifractal Spectra of INGAN/GAN Self-Assembled Quantum Dots Films." In ASME 2008 International Manufacturing Science and Engineering Conference collocated with the 3rd JSME/ASME International Conference on Materials and Processing. ASMEDC, 2008. http://dx.doi.org/10.1115/msec_icmp2008-72012.

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The surface shape and microstructure of semiconductor thin films, especially nanometer thin films, greatly influence such physical characteristics as the electricity, magnetic and optics nature to the thin films, etc. In this work, we use the fractal dimension and multifractal spectra to study the surface morphology of annealed InGaN/GaN self-assembled quantum dot (SAQD) films. Samples used in this study were grown on (0001)-oriented sapphire (Al2O3) substrates in a vertical low-pressure metalorganic chemical vapor deposition (MOCVD) reactor with a high-speed rotation disk. The fractal dimension and multifractal spectra can be used to describe the influence of different annealing conditions on surface characterization. Fractal analysis reveals that both the average surface roughness and root-mean-square roughness of nanostructure surfaces decreased after thermal annealing. It can be seen that a smoother surface was obtained after an annealing temperature of 800°C, and it implies that the surface roughness of this case is minimum in all tests. The results of this paper also include a mathematical model to describe the observation of fractal and multifractal characteristics in semiconductor nanostructure films.
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Mellor, A., N. P. Hylton, F. Shirley, T. Thomas, K. H. Lee, Y. Al-Saleh, A. Braun, et al. "Nanostructured Solar Cells: Surface Textures and Quantum Dots." In Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/pv.2015.ptu2b.2.

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Nozik, A. J., and M. C. Beard. "Semiconductor Quantum Dots for Applications to Advanced Concepts for Solar Photon Conversion to Electricity and Solar Fuels." In Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/pv.2017.pm2a.1.

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Kanai, Yasushi, Takashi Ikuta, Takao Ono, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, and Kazuhiko Matsumoto. "Detection Kondo effect in graphene quantum dots." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528502.

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Mozdbar, Afsaneh, Amideddin Nouralishahi, Shohreh Fatemi, and Ghazaleh Mirakhori. "The effect of precursor on the optical properties of carbon quantum dots synthesized by hydrothermal/solvothermal method." In 6TH INTERNATIONAL BIENNIAL CONFERENCE ON ULTRAFINE GRAINED AND NANOSTRUCTURED MATERIALS: (UFGNSM2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5018961.

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Ozkan, Cengiz S. "Assembly at the Nanoscale: Towards Functional Nanostructured Materials (Invited)." In ASME 2006 Multifunctional Nanocomposites International Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/mn2006-17078.

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This paper reports the self assembly of functional nanostructured materials including multi-walled Carbon Nanotube-Quantum Dot (CNT-QD) heterojunctions using the Ethylene Carbodiimide Coupling procedure (EDC). Thiol stabilized ZnS capped CdSe quantum dots containing amine terminal groups (QD-NH2) were conjugated with acid treated Multi-Walled Carbon Nanotubes (MWCNT) ranging from 400 nm to 4μm in length. SEM, TEM, EDS and FTIR were used to characterize the conjugation process.
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