Journal articles: 'Semiconductors – Plasma effects'

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Rolfs, C. "Metals, the plasma of the poor man?" HNPS Advances in Nuclear Physics 12 (August 30, 2021): 16. http://dx.doi.org/10.12681/hnps.3342.

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The electron screening effect in the d(d,p)t reaction has been studied for deuterated metals, insulators, and semiconductors, i.e. 58 samples in total. As compared to measurements performed with a gaseous D2 target, a large effect has been observed in most metals, while a small (gaseous) effect is found e.g. for the insulators, semiconductors, and lanthanides. The periodic table provides the ordering of the observed small and large effects in the samples. An explanation of the large effects in metals is possibly provided by the classical plasma screening of Debye applied to the quasi-free metallic electrons. The data also provide information on the solubility of hydrogen in the samples.

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Juršėnas, Saulius, G. Kurilčik, and A. Žukauskas. "Dense Electron-Hole Plasma Effects on Energy Relaxation in Highly Excited Polar Semiconductors." Materials Science Forum 297-298 (December 1998): 99–102. http://dx.doi.org/10.4028/www.scientific.net/msf.297-298.99.

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Al-Yousef, Haifa A., Sh M. Khalil, and Alkesh Punjabi. "Degeneracy in Magneto-Active Dense Plasma." Advances in Mathematical Physics 2020 (January 23, 2020): 1–6. http://dx.doi.org/10.1155/2020/6495807.

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Degenerate dense plasmas are of great interest due to their important applications in modern technology and astrophysics. Such plasmas have generated a lot of interest in the last decade owing to their importance in many areas of physics such as semiconductors, metals, microelectronics, carbon nanotubes, quantum dots, and quantum wells. Besides, degenerate plasmas present very interesting features for fusion burning waves’ ignition and propagation. In this paper, we investigated the effects of static magnetic field on energy states and degeneracy of electrons in dense plasma. Using perturbation theory, two cases are considered, strongly and weakly magnetized electrons. Strong magnetic field will not eliminate completely the degeneracy, but it functions to reduce degeneracy. Perturbed energy eigenvalues ΔE are calculated to high accuracy. Besides, regardless of whether the perturbed state is degenerate or not, the energy ΔE is given by considering the average of orbital and spin coupling Ws=ℵrL→·S→ with respect to the eigenfunction Ψn,l,m,ms. Here L→ is the angular momentum vector, S→ is the spin vector of electrons, and ℵr is the energy of spin orbit coupling in plasma, which plays a crucial role in the study of energy states and degeneracy of plasma electrons.

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B�nyai, L., and S. W. Koch. "A simple theory for the effects of plasma screening on the optical spectra of highly excited semiconductors." Zeitschrift f�r Physik B Condensed Matter 63, no. 3 (September 1986): 283–91. http://dx.doi.org/10.1007/bf01303807.

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Rodríguez, M. A., J. L. Carrillo, and J. Reyes. "Thermalization and cooling processes in a dense photogenerated plasma in polar semiconductors: Effects of screening and phonon heating." Physical Review B 35, no. 12 (April 15, 1987): 6318–27. http://dx.doi.org/10.1103/physrevb.35.6318.

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Kao, Chyuan-Haur, Yen-Lin Su, Wei-Jen Liao, Ming-Hsien Li, Wei-Lun Chan, Shang-Che Tsai, and Hsiang Chen. "Effects of CF4 Plasma Treatment on Indium Gallium Oxide and Ti-doped Indium Gallium Oxide Sensing Membranes in Electrolyte–Insulator–Semiconductors." Crystals 10, no. 9 (September 14, 2020): 810. http://dx.doi.org/10.3390/cryst10090810.

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Electrolyte–insulator–semiconductor (EIS) sensors, used in applications such as pH sensing and sodium ion sensing, are the most basic type of ion-sensitive field-effect transistor (ISFET) membranes. Currently, some of the most popular techniques for synthesizing such sensors are chemical vapor deposition, reactive sputtering and sol-gel deposition. However, there are certain limitations on such techniques, such as reliability concerns and isolation problems. In this research, a novel design of an EIS membrane consisting of an optical material of indium gallium oxide (IGO) was demonstrated. Compared with conventional treatment such as annealing, Ti doping and CF4 plasma treatment were incorporated in the fabrication of the film. Because of the effective treatment of doping and plasma treatment, the defects were mitigated and the membrane capacitance was boosted. Therefore, the pH sensitivity can be increased up to 60.8 mV/pH. In addition, the hysteresis voltage can be improved down to 2.1 mV, and the drift voltage can be suppressed to as low as 0.23 mV/h. IGO-based membranes are promising for future high-sensitivity and -stability devices integrated with optical applications.

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Yang Liu, Yang Liu, Yue Tong Yue Tong, Suyu Li Suyu Li, Ying Wang Ying Wang, Anmin Chen Anmin Chen, and and Mingxing Jin and Mingxing Jin. "Effect of sample temperature on laser-induced semiconductor plasma spectroscopy." Chinese Optics Letters 14, no. 12 (2016): 123001–5. http://dx.doi.org/10.3788/col201614.123001.

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NOZARI, KOUROSH, and MAHYAR MADADI. "BANDGAP NARROWING IN NANO-WIRES." International Journal of Modern Physics C 17, no. 02 (February 2006): 167–85. http://dx.doi.org/10.1142/s0129183106009102.

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In this paper we consider two different geometry of quasi one-dimensional semiconductors and calculate their exchange-correlation induced bandgap renormalization (BGR) as a function of the electron-hole plasma density and quantum wire width. Based on different fabrication scheme, we define suitable external confinement potential and then leading-order GW dynamical screening approximation is used in the calculation by treating electron–electron Coulomb interaction and electron-optical phonon interaction. Using a numerical scheme, screened Coulomb potential, probability of different states, profile of charge density and the values of the renormalized gap energy are calculated and the effects of variation of confinement potential width and temperature are studied.

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Chen, Yi-Ming, Chien-Hung Wu, Kow-Ming Chang, Yu-Xin Zhang, Ni Xu, Tsung-Ying Yu, and Albert Chin. "Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4110–13. http://dx.doi.org/10.1166/jnn.2020.17556.

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Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm2/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780–1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497–1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114–5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (μFE) 19.7 cm2/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.

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Ahmed, Sabah M. "Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method." Innovaciencia Facultad de Ciencias Exactas, Físicas y Naturales 6, no. 1 (December 28, 2018): 1–9. http://dx.doi.org/10.15649/2346075x.463.

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Introduction: In recent years a metal oxide semiconductors have been paid attention due to their excellent chemical and physical properties. ZnO (Zinc oxide) is considered as one of the most attractive semiconductor materials for implementation in photo-detectors, gas sensors, photonic crystals, light emitting diodes, photodiodes, and solar cells, due to its novel electrical and optoelectronic properties. There are different uses of metal oxide semiconductors such us, UV photodetectors which are useful in space research’s, missile warning systems, high ﬂame detectors, air quality spotting, gas sensors, and precisely calculated radiation for the treatment of UV-irradiated skin. ZnO is a metal oxide semiconductors and it is used as a transparent conducting oxide thin ﬁlm because it has the best higher thermal stability, best resistance against the damage of hydrogen plasma processing and relatively cheaper if one compares it with ITO. Materials and Methods: On glass substrates, Al-doped ZnO (AZO) nanorods have been grown by a low -cost chemical bath deposition (CBD) method at low temperature. The seed layer of ZnO was coated on glass substrates. The effect of the Al-doping on the aligned, surface morphology, density, distribution, orientation and structure of ZnO nanorods are investigated. The Al-doping ratios are 0%, 0.2%, 0.8% and 2%. The Aluminum Nitrate Nonahydrate (Al (NO3)3.9H2O) was added to the growth solution, which is used as a source of the aluminum dopant element. The morphology and structure of the Al-doped ZnO nanorods are characterized by field emission scanning electron microscopy (FESEM) and high-resolution X-ray diffractometer (XRD). using the radio RF (Radio frequency) magnetron technique. Results and Discussion: The results show that the Al-doping have remarkable effects on the topography parameters such as diameter, distribution, alignment, density and nanostructure shape of the ZnO nanorods. These topography parameters have proportionally effective with increases of the Al-doping ratio. Also, X-ray diffraction results show that the Al-doping ratio has a good playing role on the nanostructure orientation of the ZnO nanorods. Conclusions: The Aluminum Nitride Nanohydrate considered as a good Aluminum source for doping ZnONR. It is clear from FESEM results that the Al-doping of ZnONR has a remarkable effect on the surface topography of nanorods for all aluminum doping ratios. From XRD patterns, it concludes that as the Al-doping ratio increases, the reorientation of the nanostructure of ZnO increases towards [100] direction. The results obtained also have shown that the average diameter of a nanorod is increased with increasing the ratio of Al-doping.

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Hilsum, Cyril. "Flat-panel electronic displays: a triumph of physics, chemistry and engineering." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 368, no. 1914 (March 13, 2010): 1027–82. http://dx.doi.org/10.1098/rsta.2009.0247.

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This paper describes the history and science behind the development of modern flat-panel displays, and assesses future trends. Electronic displays are an important feature of modern life. For many years the cathode ray tube, an engineering marvel, was universal, but its shape was cumbersome and its operating voltage too high. The need for a flat-panel display, working at a low voltage, became imperative, and much research has been applied to this need. Any versatile flat-panel display will exploit an electro-optical effect, a transparent conductor and an addressing system to deliver data locally. The first need is to convert an electrical signal into a visible change. Two methods are available, the first giving emission of light, the second modulating ambient illumination. The most useful light-emitting media are semiconductors, historically exploiting III–V or II–VI compounds, but more recently organic or polymer semiconductors. Another possible effect uses gas plasma discharges. The modulating, or subtractive, effects that have been studied include liquid crystals, electrophoresis, electrowetting and electrochromism. A transparent conductor makes it possible to apply a voltage to an extended area while observing the results. The design is a compromise, since the free electrons that carry current also absorb light. The first materials used were metals, but some semiconductors, when heavily doped, give a better balance, with high transmission for a low resistance. Delivering data unambiguously to a million or so picture elements across the display area is no easy task. The preferred solution is an amorphous silicon thin-film transistor deposited at each cross-point in an X – Y matrix. Success in these endeavours has led to many applications for flat-panel displays, including television, flexible displays, electronic paper, electronic books and advertising signs.

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Siddique, M., M. Jamil, A. Rasheed, F. Areeb, Asif Javed, and P. Sumera. "Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas." Zeitschrift für Naturforschung A 73, no. 2 (January 26, 2018): 135–41. http://dx.doi.org/10.1515/zna-2017-0275.

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AbstractWe studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

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Lucovsky, G. "The effects of subcutaneous oxidation at the interfaces between elemental and compound semiconductors and SiO2 thin films deposited by remote plasma enhanced chemical vapor deposition." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 4 (July 1989): 861. http://dx.doi.org/10.1116/1.584615.

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Kumar, Punit, and Nafees Ahmad. "Surface plasma wave in spin-polarized semiconductor quantum plasma." Laser and Particle Beams 38, no. 2 (May 27, 2020): 159–64. http://dx.doi.org/10.1017/s026303462000018x.

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AbstractThe possibilities of surface plasma wave (SPW) on a metal-vacuum interface in semiconductor quantum plasma by considering the effects of Coulomb exchange (CE) interaction and the spin-polarization has been explored. The dispersion for the SPW has been setup using the modified quantum hydrodynamic (QHD) model taking into account the Fermi pressure, the quantum Bohm force, the CE, and the electron spin. The optical gain of SPW has been evaluated. It is found that CE effects and spin-polarization increases the wave frequency and enhances the gain during the stimulated emission.

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Kriman, A. M., R. P. Joshi, M. J. Kann, and D. K. Ferry. "Exchange effects in hot plasmas in semiconductors." Semiconductor Science and Technology 7, no. 3B (March 1, 1992): B243—B247. http://dx.doi.org/10.1088/0268-1242/7/3b/058.

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Fathpour, Sasan. "Emerging heterogeneous integrated photonic platforms on silicon." Nanophotonics 4, no. 1 (May 27, 2015): 143–64. http://dx.doi.org/10.1515/nanoph-2014-0024.

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AbstractSilicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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Yi, Jianjian, Xiaojie She, Yanhua Song, Hui Xu, Peng Zhang, Zhao Mo, Liang Liu, Daolin Du, and Huaming Li. "A silver on 2D white-C3N4support photocatalyst for mechanistic insights: synergetic utilization of plasmonic effect for solar hydrogen evolution." RSC Advances 6, no. 113 (2016): 112420–28. http://dx.doi.org/10.1039/c6ra23964a.

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PHONG, TRAN CONG, VO THANH LAM, and BUI DINH HOI. "ELECTROPHONON RESONANCE IN DOPED SEMICONDUCTOR SUPERLATTICES." Modern Physics Letters B 25, no. 12n13 (May 30, 2011): 1093–100. http://dx.doi.org/10.1142/s0217984911026802.

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The electrophonon resonance (EPR) effect in doped semiconductor superlattices (DSSL) are investigated by using the quantum kinetic equation (QKE) for electrons to obtain the general analytic expression for optical absorption coefficient. We also obtain an EPR condition as a function of the photon energy and plasma energy. In particular, anomalous behaviors of the EPR effect such as the splitting of EPR peaks for incident photon energy or plasma energy are discussed. This raises a possibility of detecting electric subbands in DSSLs experimentally by utilizing EPR effects.

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Rudd, Roya, Colin Hall, Peter J. Murphy, Peter J. Reece, Eric Charrault, and Drew Evans. "Decoupling the effects of confinement and passivation on semiconductor quantum dots." Physical Chemistry Chemical Physics 18, no. 29 (2016): 19765–72. http://dx.doi.org/10.1039/c6cp03438a.

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Dec, Bartłomiej, Robert Bogdanowicz, and Krzysztof Pyrchla. "Ab-initio study of electrical and optical properties of allylamine." Photonics Letters of Poland 10, no. 3 (October 1, 2018): 94. http://dx.doi.org/10.4302/plp.v10i3.847.

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The Density functional theory is one of most promising methodology in fast and accurate calculations of electrical and optical properties from the atomic basis. In this paper, we calculate electrical and optical properties of allylamine (2-propen 1- amine) in terms of accuracy and speed of calculations obtained by selection of DFT-1/2 method with ultrasoft Vanderbilt pseudopotentials. Comparison of density of states between molecule and bulk configuration shows great agreement between them, therefore we calculated refractive index which showed even better agreement with experimental data. Full Text: PDF ReferencesW. Kohn and L. J. Sham, 'Self-Consistent Equations Including Exchange and Correlation Effects', Phys. Rev., vol. 140, no. 4A, pp. A1133–A1138, Nov. 1965. CrossRef J. P. Perdew, K. Burke, and M. Ernzerhof, 'Generalized Gradient Approximation Made Simple', Phys. Rev. Lett., vol. 77, no. 18, pp. 3865–3868, Oct. 1996. CrossRef L. G. Ferreira, M. Marques, and L. K. Teles, 'Approximation to density functional theory for the calculation of band gaps of semiconductors', Physical Review B, vol. 78, no. 12, Sep. 2008. CrossRef L. G. Ferreira, M. Marques, and L. K. Teles, 'Slater half-occupation technique revisited: the LDA-1/2 and GGA-1/2 approaches for atomic ionization energies and band gaps in semiconductors', AIP Advances, vol. 1, no. 3, p. 032119, Aug. 2011. CrossRef M. Schlipf and F. Gygi, 'Optimization algorithm for the generation of ONCV pseudopotentials', Computer Physics Communications, vol. 196, pp. 36–44, Nov. 2015. CrossRef P. Prayongpan and C. Michael Greenlief, 'Density functional study of ethylamine and allylamine on Si(100)-2×1 and Ge(100)-2×1 surfaces', Surface Science, vol. 603, no. 7, pp. 1055–1069, Apr. 2009. CrossRef M. T. van Os, B. Menges, R. Foerch, G. J. Vancso, and W. Knoll, 'Characterization of Plasma-Polymerized Allylamine Using Waveguide Mode Spectroscopy', Chemistry of Materials, vol. 11, no. 11, pp. 3252–3257, Nov. 1999. CrossRef J. Zeng, R.-Q. Zhang, and H. Treutlein, Quantum Simulations of Materials and Biological Systems. Springer Science & Business Media, 2012. CrossRef I. Del Villar, I. R. Matias, and F. J. Arregui, 'Enhancement of sensitivity in long-period fiber gratings with deposition of low-refractive-index materials', Optics Letters, vol. 30, no. 18, p. 2363, Sep. 2005. CrossRef D. Nidzworski et al., 'A rapid-response ultrasensitive biosensor for influenza virus detection using antibody modified boron-doped diamond', Sci Rep, vol. 7, Nov. 2017. CrossRef Synopsys QuantumWise, Atomistix Toolkit version 2018.06 .D. C. Liu and J. Nocedal, 'On the limited memory BFGS method for large scale optimization', Mathematical Programming, vol. 45, no. 1–3, pp. 503–528, Aug. 1989. CrossRef K. F. Garrity, J. W. Bennett, K. M. Rabe, and D. Vanderbilt, 'Pseudopotentials for high-throughput DFT calculations', Computational Materials Science, vol. 81, pp. 446–452, Jan. 2014. CrossRef Yu Cai, T. Zhang, A. B. Anderson, J. C. Angus, L. N. Kostadinov, and T. V. Albu, 'The origin of shallow n-type conductivity in boron-doped diamond with H or S co-doping: Density functional theory study', Diamond and Related Materials, vol. 15, no. 11, pp. 1868–1877, Nov. 2006. CrossRef

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Ghosh, S., Swati Dubey, and Kamal Jain. "Non-Phase Matched Stimulated Parametric Scattering in Semiconductor Plasma: Temporal Effects." Acta Physica Polonica A 135, no. 3 (March 2019): 363–67. http://dx.doi.org/10.12693/aphyspola.135.363.

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Kohagura, J., T. Cho, M. Hirata, T. Okamura, T. Tamano, K. Yatsu, S. Miyoshi, K. Hirano, and H. Maezawa. "New methods for semiconductor charge-diffusion-length measurements using synchrotron radiation." Journal of Synchrotron Radiation 5, no. 3 (May 1, 1998): 874–76. http://dx.doi.org/10.1107/s0909049597017524.

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The extension of a new theory on the X-ray energy response of semiconductor detectors is carried out to characterize the X-ray response of a multichannel semiconductor detector fabricated on one silicon wafer. Recently, these multichannel detectors have been widely utilized for position-sensitive observations in various research fields, including synchrotron radiation research and fusion-plasma investigations. This article represents the verification of the physics essentials of a proposed theory on the X-ray response of semiconductor detectors. The three-dimensional charge-diffusion effects on the adjoining detector-channel signals are experimentally demonstrated at the Photon Factory for two types of multichannel detectors. These findings are conveniently applicable for measuring diffusion lengths for industrial requirements.

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Ghosh, S., and Apurva Muley. "Acousto–electric interaction in inhomogeneous semiconductor quantum plasma." International Journal of Modern Physics B 31, no. 28 (November 9, 2017): 1750207. http://dx.doi.org/10.1142/s0217979217502071.

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In the present paper, an analytical study has been presented to examine the acousto–electric interactions in piezoelectric inhomogeneous semiconductor quantum plasma. The analysis is made by deriving the quantum-modified dispersion relation and subsequently deducing the expression of gain coefficient of acoustic wave using quantum hydrodynamic (QHD) model for inhomogeneous semiconductor plasma. The linearly and quadratically varying plasma density profiles have been chosen to investigate the effects of inhomogeneity through density gradient. We address the role of quantum parameter-H, scale length of density variation L and propagation distance z on gain profiles of acoustic wave. It has been found that the presence of these parameters can significantly modify the crossover and resonance characteristics of acoustic wave. Results reveal that the crossover point for wave amplification is found to be greater than unity in inhomogeneous quantum plasma media while the resonance condition is effectively influenced by these parameters in all the considered cases. We found that more acoustic gain would be possible if the acoustic mode propagates from low to high plasma density region in the medium. It is also found that as the medium tends to have high inhomogeneity, more pronounced modifications on resonance characteristics of acoustic wave are expected.

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Chow, Weng W., and Hans Christian Schneider. "The Application of Gain Theory to Vertical-Cavity Surface-Emitting Lasers." MRS Bulletin 27, no. 7 (July 2002): 525–30. http://dx.doi.org/10.1557/mrs2002.171.

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AbstractThe development of vertical-cavity surface-emitting lasers (VCSELs) relies on an understanding of gain-medium physics, more so than in edge-emitting lasers. An important tool in the investigation of semiconductor gain behavior is a theory that provides a systematic account of the interaction between the laser field and the electron–hole plasma, the influence of the band structure, and the many-body effects due to Coulomb interactions among carriers. This article describes a semiclassical approach that is based on the semiconductor Bloch equations, with carrier correlation effects described at the level of quantum kinetic theory. To illustrate its application, we discuss research activities involving the development of gain media for long-wavelength VCSELs.

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Sumera, P., A. Rasheed, M. Jamil, M. Siddique, and F. Areeb. "Landau quantization effects on hole-acoustic instability in semiconductor plasmas." Physics of Plasmas 24, no. 12 (December 2017): 122107. http://dx.doi.org/10.1063/1.5002675.

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Khan, Arroj A., M. Jamil, and A. Hussain. "Wake potential with exchange-correlation effects in semiconductor quantum plasmas." Physics of Plasmas 22, no. 9 (September 2015): 092103. http://dx.doi.org/10.1063/1.4929862.

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Gericke, D. O., S. Kosse, M. Schlanges, and M. Bonitz. "Strong Correlation (T-Matrix) Effects in Electron-Hole Plasmas in Semiconductors." physica status solidi (b) 206, no. 1 (March 1998): 257–63. http://dx.doi.org/10.1002/(sici)1521-3951(199803)206:1<257::aid-pssb257>3.0.co;2-l.

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Журавлева, Ирина, and Irina ZHuravlyeva. "THE MAIN FACTORS OF IONIZING RADIATION OF OUTER SPACE ACTING ON MICROCIRCUITS." Modeling of systems and processes 12, no. 3 (December 1, 2019): 11–16. http://dx.doi.org/10.12737/2219-0767-2019-12-3-11-16.

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In space, ionizing radiation is created by several sources. The most important generalized concepts about the degree of the Influence of space plasma is manifested through the electrification of dielectric protective and thermally insulating coatings inside the structure of electronic equipment. The article discusses the main effects of ionizing radiation on the semiconductor components of space communication systems.

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Xu, Qing, Yu-Xing Li, Xiao-Ning Li, Jia-Bin Wang, Fan Yang, Yi Yang, and Tian-Ling Ren. "Simulation of SiO2 etching in an inductively coupled CF4 plasma." Modern Physics Letters B 31, no. 06 (February 28, 2017): 1750042. http://dx.doi.org/10.1142/s0217984917500427.

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Plasma etching technology is an indispensable processing method in the manufacturing process of semiconductor devices. Because of the high fluorine/carbon ratio of CF4, the CF4 gas is often used for etching SiO2. A commercial software ESI-CFD is used to simulate the process of plasma etching with an inductively coupled plasma model. For the simulation part, CFD-ACE is used to simulate the chamber, and CFD-TOPO is used to simulate the surface of the sample. The effects of chamber pressure, bias voltage and ICP power on the reactant particles were investigated, and the etching profiles of SiO2 were obtained. Simulation can be used to predict the effects of reaction conditions on the density, energy and angular distributions of reactant particles, which can play a good role in guiding the etching process.

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Boudreau, Marcel, Mohamed Boumerzoug, Roman V. Kruzelecky, Peter Mascher, Paul E. Jessop, and David A. Thompson. "Optical and electrical properties of electron cyclotron resonance chemical vapour-deposited SiNx:H films." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 1104–8. http://dx.doi.org/10.1139/p92-178.

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Silicon nitride (SiNx:H) films were deposited on both InP and Si substrates at temperatures ranging from room temperature to 400 °C by electron cyclotron resonance (ECR) plasma chemical-vapour deposition. The silicon source used was ditertiary butyl silane (SiH2(C4H9)2) that was activated by ECR plasmas composed of nitrogen alone or in combination with hydrogen or argon. The effects of various deposition parameters on the film properties are reported. The film indices of refraction ranged from 1.85 to 2.0, while the buffered HF etch rates were as low as 6 Å min−1 (1 Å = 10−10 m). Si/N ratios of the films ranged from 0.70 to 2.5, while the total hydrogen content was found to be approximately 20 to 25 at.%. Incorporation of carbon from the organic silicon source was efficiently suppressed (< 1%) by the addition of a small amount of H2 to the ECR plasma gas. To study the electrical properties of the SiNx:H films, metal–insulator–semiconductor structures were fabricated. Film resistivities as high as 2 × 1015 Ω cm and insulator dielectric constants from 4 to 5 were measured.

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Singh, M., P. Aghamkar, and S. K. Bhaker. "Parametric dispersion and amplification in semiconductor plasmas: Effects of carrier heating." Optics & Laser Technology 41, no. 1 (February 2009): 64–69. http://dx.doi.org/10.1016/j.optlastec.2008.04.002.

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Park, Yoonsoo, Hyuna Lim, Namwuk Baek, Seung Hun Park, Sungwoo Lee, Jeayoung Yang, and Donggeun Jung. "Study on Effects of Carrier Gas Flow Rate on Properties of Low Dielectric Constant Film Deposited by Plasma Enhanced Chemical Vapor Deposition Using the Octamethylcyclotetrasiloxane Precursor." Journal of Nanoscience and Nanotechnology 21, no. 8 (August 1, 2021): 4470–76. http://dx.doi.org/10.1166/jnn.2021.19416.

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In semiconductor industry, low-dielectric-constant SiCOH films are widely used as inter-metal dielectric (IMD) material to reduce a resistance-capacitance delay, which could degrade performances of semiconductor chips. Plasma enhanced chemical vapor deposition (PECVD) system has been employed to fabricate the low-dielectric-constant SiCOH films. In this work, among various parameters (plasma power, deposition pressure, substrate temperature, precursor injection flow rate, etc.), helium carrier gas flow rate was used to modulate the properties of the low-dielectric-constant SiCOH films. Octamethylcyclotetrasiloxane (OMCTS) precursor and helium were injected into the process chamber of PECVD. And then SiCOH films were deposited varying helium carrier gas flow rate. As helium carrier gas flow rate increased from 1500 to 5000 sccm, refractive indices were increased from 1.389 to 1.428 with enhancement of mechanical strength, i.e., increased hardness and elastic modulus from 1.7 and 9.1 GPa to 3.3 and 19.8 GPa, respectively. However, the relative dielectric constant (k) value was slightly increased from 2.72 to 2.97. Through analysis of Fourier transform infrared (FTIR) spectroscopy, the effects of the helium carrier gas flow rate on chemical structure, were investigated. It was thought that the increase in helium carrier gas flow rate could affect the density with changes of chemical structure and composition. In conclusion, regulation of helium carrier gas flow rate can effectively modulate k values and mechanical strength, which is needed for IMD material in semiconductor fabrication possess.

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Kohagura, J., T. Cho, M. Hirata, T. Numakura, R. Minami, H. Watanabe, T. Sasuga, et al. "Effects of nuclear fusion produced neutrons on silicon semiconductor plasma X-ray detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 477, no. 1-3 (January 2002): 215–19. http://dx.doi.org/10.1016/s0168-9002(01)02020-4.

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C�te, R., L. B�nyai, and H. Haug. "Coulomb effects in an optically excited electron-hole plasma of a disordered semiconductor." Zeitschrift f�r Physik B Condensed Matter 81, no. 2 (June 1990): 199–208. http://dx.doi.org/10.1007/bf01309349.

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TSEN, K. T. "TIME-RESOLVED RAMAN STUDIES OF NON-EQUILIBRIUM EXCITATIONS IN GaAs-AlAs AND GaAs-AlxGa1−xAs MULTIPLE QUANTUM WELL STRUCTURES." Modern Physics Letters B 06, no. 12 (May 20, 1992): 703–16. http://dx.doi.org/10.1142/s0217984992000788.

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Recent experimental results obtained from time-resolved Raman studies in GaAs-AlAs and GaAs-Al x Ga 1−x As multiple quantum well structures are reviewed. Particular emphasis is made on (1) electron-phonon and phonon-phonon interactions and their association with the hot-phonon effects in the hot-carrier dynamics of multiple quantum well structures; and (2) the transport properties of photoexcited electron-hole plasma and excitons in semiconductor multiple quantum well structures.

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Alzahrani, Faris. "The Effects of Variable Thermal Conductivity in Semiconductor Materials Photogenerated by a Focused Thermal Shock." Mathematics 8, no. 8 (July 27, 2020): 1230. http://dx.doi.org/10.3390/math8081230.

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In this work, the generalized photo-thermo-elastic model with variable thermal conductivity is presented to estimates the variations of temperature, the carrier density, the stress and the displacement in a semiconductor material. The effects of variable thermal conductivity under photo-thermal transport process is investigated by using the coupled model of thermoelastic and plasma wave. The surface of medium is loaded by uniform unit step temperature. Easily, the analytical solutions in the domain of Laplace are obtained. By using Laplace transforms with the eigenvalue scheme, the fields studied are obtained analytically and presented graphically.

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Weng, Wu-Te, Yao-Jen Lee, Horng-Chih Lin, and Tiao-Yuan Huang. "Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology." International Journal of Plasma Science and Engineering 2009 (December 14, 2009): 1–10. http://dx.doi.org/10.1155/2009/308949.

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This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO2/poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

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Dec, Bartłomiej, and Robert Bogdanowicz. "DFT studies of refractive index of boron-doped diamond." Photonics Letters of Poland 10, no. 2 (June 30, 2018): 39. http://dx.doi.org/10.4302/plp.v10i2.824.

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The density functional theory is one of the optimal solutions in calculation of optical properties of materials on the quantum scale. In this paper, we have investigated refractive index of a boron-doped diamond structure with the usage of Atomistic Toolkit software from Synopsys. During this study, various methods and pseudopotentials were checked to obtain an optimal performance-accuracy method for calculation of such materials. Leading method used in calculation was used meta-GGA with Fritz-Haber Institute pseudopotential. Full Text: PDF ReferencesW. Kohn and L. J. Sham, "Self-Consistent Equations Including Exchange and Correlation Effects", Phys. Rev., vol. 140, no. 4A, pp. A1133–A1138 (1965). CrossRef J. P. Perdew, K. Burke, and M. Ernzerhof, "Generalized Gradient Approximation Made Simple", Phys. Rev. Lett., vol. 77, no. 18, pp. 3865–3868 (1996). CrossRef Y. Yan, J. Gong, and Z. Zong, "Superconductivity of p-type diamond (001) and (111) thin films: Ab initio calculations", Thin Solid Films, vol. 518, no. 17, pp. 4989–4996 (2010). CrossRef M. P. Desjarlais, "Density functional calculations of the reflectivity of shocked xenon with ionization based gap corrections", Contributions to Plasma Physics, vol. 45, no. 3–4, pp. 300–304 (2005). CrossRef L. G. Ferreira, M. Marques, and L. K. Teles, "Approximation to density functional theory for the calculation of band gaps of semiconductors", Physical Review B, vol. 78, no. 12, (2008). CrossRef J. M. Soler et al., "The SIESTA method for ab initio order- N materials simulation", Journal of Physics: Condensed Matter, vol. 14, no. 11, pp. 2745–2779 (2002). CrossRef L. Kleinman and D. M. Bylander, "Efficacious Form for Model Pseudopotentials", Phys. Rev. Lett., vol. 48, no. 20, pp. 1425–1428 (1982). CrossRef Synopsys QuantumWise, Atomistix Toolkit version 2017.12.F. Tran and P. Blaha, "Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential", Phys. Rev. Lett., vol. 102, no. 22, p. 226401 (2009). CrossRef D. R. Lide, Ed., CRC Handbook of Chemistry and Physics, 83rd Edition, Boca Raton, Fla.: CRC Press, 2002.N. Troullier and J. L. Martins, "Efficient pseudopotentials for plane-wave calculations", Phys. Rev. B, vol. 43, no. 3, pp. 1993–2006 (1991). CrossRef W. A. Harrison, Solid state theory. McGraw-Hill, 1970.M. Sobaszek et al., "Optical and electrical properties of ultrathin transparent nanocrystalline boron-doped diamond electrodes", Optical Materials, vol. 42, pp. 24–34 (2015). CrossRef M. Ficek et al., "Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates", Applied Surface Science, vol. 387, pp. 846–856 (2016). CrossRef R. Maezono, A. Ma, M. D. Towler, and R. J. Needs, "Equation of State and Raman Frequency of Diamond from Quantum Monte Carlo Simulations", Phys. Rev. Lett., vol. 98, no. 2, p. 025701 (2007). CrossRef R. Bogdanowicz et al., "Opto-Electrochemical Sensing Device Based on Long-Period Grating Coated with Boron-Doped Diamond Thin Film", J. Opt. Soc. Korea, JOSK, vol. 19, no. 6, pp. 705–710, (2015). CrossRef M. Ficek et al., "Linear antenna microwave chemical vapour deposition of diamond films on long-period fiber gratings for bio-sensing applications", Opt. Mater. Express, OME, vol. 7, no. 11, pp. 3952–3962 (2017). CrossRef M. Ficek, R. Bogdanowicz, and J. Ryl, "Nanocrystalline CVD Diamond Coatings on Fused Silica Optical Fibres: Optical Properties Study", Acta Physica Polonica A, vol. 127, no. 3, pp. 868–873 (2015). CrossRef P. J. Stephens, F. J. Devlin, C. F. Chabalowski, and M. J. Frisch, "Ab Initio Calculation of Vibrational Absorption and Circular Dichroism Spectra Using Density Functional Force Fields", J. Phys. Chem., vol. 98, no. 45, pp. 11623–11627 (1994). CrossRef P. Rivero, W. Shelton, and V. Meunier, "Surface properties of hydrogenated diamond in the presence of adsorbates: A hybrid functional DFT study", Carbon, vol. 110, pp. 469–479 (2016). CrossRef

39

Zeba, I., M. E. Yahia, P. K. Shukla, and W. M. Moslem. "Electron–hole two-stream instability in a quantum semiconductor plasma with exchange-correlation effects." Physics Letters A 376, no. 34 (July 2012): 2309–13. http://dx.doi.org/10.1016/j.physleta.2012.05.049.

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40

Ki, Dae-Han, and Young-Dae Jung. "Electron–Phonon Coupling Effects on the Karpman–Washimi Ponderomotive Magnetization in a Semiconductor Plasma." Journal of the Physical Society of Japan 79, no. 10 (October 15, 2010): 105001. http://dx.doi.org/10.1143/jpsj.79.105001.

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Ayaz, Yüksel, and Norman J. M. Horing. "Nonlocality effects of a bulk semiconductor plasma in interaction with quantum well superlattice plasmons." Physical Review B 61, no. 19 (May 15, 2000): 12636–38. http://dx.doi.org/10.1103/physrevb.61.12636.

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42

Park, Yoonsoo, Hyuna Lim, Sungyool Kwon, Younghyun Kim, Wonjin Ban, and Donggeun Jung. "Effects of He/H2 Plasma Treatment on Properties of SiCOH Films Deposited with the 1,1,1,3,5,7,7,7- Octamethyl-3,5-Bis(Trimethylsiloxy) Tetrasiloxane Precursor." Journal of Nanoscience and Nanotechnology 20, no. 11 (November 1, 2020): 6706–12. http://dx.doi.org/10.1166/jnn.2020.18785.

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Low-dielectric-constant SiCOH films fabricated using plasma enhanced chemical vapor deposition (PECVD) are widely used as inter-metallic dielectric (IMD) layers in interconnects of semiconductor chips. In this work, SiCOH films were deposited with 1,1,1,3,5,7,7,7-octamethyl-3,5-bis(trimethylsiloxy)tetrasiloxane (OMBTSTS), and plasma treatment was performed by an inductively coupled plasma (ICP) system with mixture of He and H2. The values of relative dielectric constant (k) of the as-deposited SiCOH films ranged from 2.64 to 4.19. The He/H2 plasma treatment led to a reduction of the k values of the SiCOH films from 2.64–4.19 to 2.07–3.94. To investigate the impacts of the He/H2 plasma treatment on the SiCOH films, the chemical compositions and structures of the as-deposited and treated the SiCOH films were compared by Fourier transform infrared spectroscopy. The experimental results indicate that the k value of the SiCOH films was decreased, there was a proportional increase in pore-related Si–O–Si structure, which is commonly called the cage structure with lager angle than 144°, after He/H2 plasma treatment. The He/H2 plasma treatment was considered to have reduced the k value by forming pores that could be represented by the cage structure. On the other hand, the leakage current density of the SiCOH films was slightly degraded by He/H2 plasma treatment, however, this was tolerable for IMD application. Concludingly the He/H2 plasma treated SiCOH film has the lowest relative dielectric constant (k~2.08) when the most highly hydrocarbon removal and cage structure formation increased.

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Indik, R. A., R. Binder, M. Mlejnek, J. V. Moloney, S. Hughes, A. Knorr, and S. W. Koch. "Role of plasma cooling, heating, and memory effects in subpicosecond pulse propagation in semiconductor amplifiers." Physical Review A 53, no. 5 (May 1, 1996): 3614–20. http://dx.doi.org/10.1103/physreva.53.3614.

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Choudhury, Sourav, Tushar Kanti Das, Malay Kr Ghorui, and Prasanta Chatterjee. "Propagation and interaction of two soliton in a quantum semiconductor plasma with exchange correlation effects." Physics of Plasmas 24, no. 6 (June 2017): 062103. http://dx.doi.org/10.1063/1.4984994.

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45

Bauer, Siegfried, Nadeshda Werner, Ilona Wolff, Britt Damme, Kerstin Oemus, and Peter Hoffmann. "Toxicological Investigations in the Semiconductor Industry: II. Studies on the Subacute Inhalation Toxicity and Genotoxicity of Gaseous Waste Products from the Aluminium Plasma Etching Process." Toxicology and Industrial Health 8, no. 6 (November 1992): 431–44. http://dx.doi.org/10.1177/074823379200800607.

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Male and female Wistar rats were exposed to waste gas arising from a plasma etching process in the semiconductor industries for six hr per day, five days per week, for four weeks in order to characterize subacute organ toxicity and genotoxicity. The waste gas was a complex mixture of different chlorinated hydrocarbons, inorganic by-products, and unused process gases, diluted by room air. Neither death nor behavioral changes occurred after subacute exposure. No significant exposure-related effects on body weight gain, hematology, or cardiovascular parameters were observed. Only slight effects on organ weights and clinical chemistry were seen in the exposed animals. The exposed rats of both sexes showed statistically significant increases in chromosomal aberrations and sister chromatid exchanges in bone marrow cells.

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Hussain, S., and N. Akhtar. "Nonlinear ion acoustic dissipative shock structure with exchange-correlation effects in quantum semiconductor plasmas." Physics of Plasmas 23, no. 9 (September 2016): 092110. http://dx.doi.org/10.1063/1.4962674.

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González, Luz E., and N. Porras-Montenegro. "Pressure, temperature and plasma frequency effects on the band structure of a 1D semiconductor photonic crystal." Physica E: Low-dimensional Systems and Nanostructures 44, no. 4 (January 2012): 773–77. http://dx.doi.org/10.1016/j.physe.2011.11.018.

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Hobiny, Aatef, and Ibrahim Abbas. "Analytical solution of fractional order photo-thermoelasticity in a non-homogenous semiconductor medium." Multidiscipline Modeling in Materials and Structures 14, no. 5 (December 6, 2018): 1017–30. http://dx.doi.org/10.1108/mmms-11-2017-0137.

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Purpose The purpose of this paper is to study the wave propagation in a non-homogenous semiconducting medium through the photothermal process using the fractional order photo-thermoelastic without neglecting the coupling between the plasma and thermoelastic waves that photogenerated through traction free and loaded thermally by exponentially decaying pulse boundary heat flux. Design/methodology/approach The analytical solutions in the transformed domain by the eigenvalue approach were observed through the transform techniques of Laplace. Findings Silicon-like semiconductor was used to achieve the numerical computations. Originality/value Some comparisons are shown in the figures to estimate the effects of the fractional order and non-homogeneous parameters.

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Chen, Yu, Zhihao Chen, Binyi Qin, and Xiaoyu Dai. "Thermotunable Terahertz Negative-Index Metamaterials with Dielectric Spheres Embedded in Semiconductor Host." Advances in Condensed Matter Physics 2018 (September 20, 2018): 1–6. http://dx.doi.org/10.1155/2018/2794161.

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A possibility to realize thermotunable isotropic negative-index metamaterials up to terahertz regime is theoretically investigated. The proposed composite metamaterials consist of dielectric spheres embedded randomly in a semiconductor host medium. As the variation in the intrinsic carrier density in InSb due to a variation in temperature thus changes the plasma frequency, we show theoretically the provided composite metamaterials whose index of refraction is thermally tunable and potentially less propagation loss. Furthermore, the effects of the radius of the dielectric sphere on the modulation frequency and bandwidth are discussed. Finally, we find that the design parameters for the composites can be scaled for application in the higher frequency regions.

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Joshi, R. P., K. T. Tsen, and D. K. Ferry. "Monte Carlo study of the transient expansion of photogenerated plasmas in bulk semiconductors: Nonequilibrium phonon effects." Physical Review B 41, no. 14 (May 15, 1990): 9899–906. http://dx.doi.org/10.1103/physrevb.41.9899.

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Journal articles on the topic 'Semiconductors – Plasma effects'

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