Relevant bibliographies by topics / Semiconductors Semiconductor industry

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  2. Dissertations / Theses
  3. Books
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Academic literature on the topic 'Semiconductors Semiconductor industry'

Author: Grafiati
Published: 4 June 2021
Last updated: 16 February 2022

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Journal articles on the topic "Semiconductors Semiconductor industry"

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Hockett, R. S. "Txrf Semiconductor Applications." Advances in X-ray Analysis 37 (1993): 565–75. http://dx.doi.org/10.1154/s0376030800016116.

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This is a review of Total reflection X-Ray Fluorescence (TXRF) applications for semiconductors. This review is limited to surface analysis of contamination for semiconductors and does not include chemical analysis in semiconductor processing. TXRF for surface analysis is a relatively new technology. One of the first publications occurred in 1986 using synchrotron radiation. Publications using commercially available TXRF instruments for semiconductor applications began in 1988. Today there are on the order of 100 TXRF instruments worldwide in the semiconductor industry. Since 1988 there have been about 100 publications in this field, but this number does not include numerous abstracts and publications in Japan where the majority of the commercial instruments are found today. The commercial instruments were developed for the primary application of characterizing the cleaning of planar silicon wafers, however, numerous unforeseen applications were developed by users and many of those applications are reported here. In essence TXRF has much broader application today in the semiconductor industry than supporting the cleaning of silicon wafers.
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Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.
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Zhang, Yuqian. "The Application of Third Generation Semiconductor in Power Industry." E3S Web of Conferences 198 (2020): 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.

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With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the third generation semiconductors and the second as well as the first generation semiconductors is made in this paper. Through the comparison of physical characteristics, recent marketing, production and limitations, the advantages and disadvantages of each semiconductor is analyzed and the suggestion of how to avoid the disadvantage through application is proposed. At last, the future development is predicted. According to the analysis result of this paper, silicon poses more merits. Silicon is not only cheaper but also performs better making it a preference of GaAs, and GaN in the domain of IC. The second generation semiconductor, GaAs, is widely used in the circuits and photoelectric integration. Furthermore, the third semiconductor material GaN is a promising material for power switching and communication and has the great possibility to play a crucial role in market.
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ADOM-BAMFI, GIDEON, DANIEL OPOKU, and BENJAMIN KOMMEY. "WELCOMING THE SEMICONDUCTOR INDUSTRY IN GHANA: CHALLENGES AND RECOMMENDATIONS – A CASE STUDY." Journal of Engineering Studies and Research 26, no. 4 (January 8, 2021): 27–33. http://dx.doi.org/10.29081/jesr.v26i4.232.

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The Semiconductor Industry is one industry that has been driving technological innovations for decades since its birth in the USA. Semiconductors form the building blocks of a wide array of consumer, medical and industrial electronics. The growth of many economies in the world can be attributed to the growth in the semiconductor industry in such countries. The global semiconductor industry consists of companies in the USA, South Korea, Taiwan, China, and the European Union. However, the semiconductor industry has no presence in the African region, in Ghana to be specific. This work investigates some challenges associated with the establishment of the semiconductor industry in Ghana, including challenges from basic research and development to manufacturing and marketing. The paper also highlights some recommendations which are key in laying the foundation for the entry of the industry in Ghana, including the provision of tax incentives, training of personnel, etc.
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Vagliasindi, Federico G. A., and Susan R. Poulsom. "Waste Generation and Management in the Semiconductor Industry: A Case Study." Water Science and Technology 29, no. 9 (May 1, 1994): 331–41. http://dx.doi.org/10.2166/wst.1994.0501.

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The production of semiconductors is an extremely complex process involving the deposit of several layers on silicon wafers, patterning the layers through photolithography and adding dopants to alter the conductivity. The process generates gaseous, liquid and solid waste streams consisting of many diverse and toxic components including toxic organics, variable pH, fluoride and arsenic. This paper presents the results of a study which investigated the manufacturing processes of semiconductors, including: generated pollutants, applicable regulations in the USA, waste minimization practices, and waste treatment and disposal alternatives. As part of this investigation, a case study was conducted on the waste generation and management of a semiconductor facility located in the USA.
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Strandjord, Andrew, Thorsten Teutsch, Axel Scheffler, Bernd Otto, Anna Paat, Oscar Alinabon, and Jing Li. "Wafer Level Packaging of Compound Semiconductors." Journal of Microelectronics and Electronic Packaging 7, no. 3 (July 1, 2010): 152–59. http://dx.doi.org/10.4071/imaps.263.

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The microelectronics industry has implemented a number of different wafer level packaging (WLP) technologies for high volume manufacturing, including: UBM deposition, solder bumping, wafer thinning, and dicing. These technologies were successfully developed and implemented at a number of contract manufacturing companies, and then licensed to many of the semiconductor manufacturers and foundries. The largest production volumes for these technologies are for silicon-based semiconductors. Continuous improvements and modifications to these WLP processes have made them compatible with the changes observed over the years in silicon semiconductor technologies. These industry changes include: the move from aluminum to copper interconnect metallurgy, increases in wafer size, decreases in pad pitch, and the use of Low-K dielectrics. In contrast, the direct transfer of these WLP technologies to compound semiconductor devices, like GaAs, SiC, InP, GaN, and sapphire; has been limited due to a number of technical compatibility issues, several perceived compatibility issues, and some business concerns From a technical standpoint, many compound semiconductor devices contain fragile air bridges, gold bond pads, topographical cavities and trenches, and have a number of unique bulk material properties which are sensitive to the mechanical and chemical processes associated with the standard WLP operations used for silicon wafers. In addition, most of the newer contract manufacturing companies and foundries have implemented mostly 200 and 300 mm wafer capabilities into their facilities. This limits the number of places that one can outsource the processing of 100 and 150 mm compound semiconductor wafers. Companies that are processing large numbers of silicon based semiconductor wafers at their facilities are reluctant to process many of these compound semiconductors because there is a perceived risk of cross contamination between the different wafer materials. Companies are not willing to risk their current business of processing silicon wafers by introducing these new materials into existing process flows. From a business perspective, many companies are reluctant to take the liability risks associated with some of the very high-value compound semiconductors. In addition, the volumes for many of the compound semiconductor devices are very small compared with silicon based devices, thus making it hard to justify interruption in the silicon wafer flows to accommodate these lower volume products. In spite of these issues and perceptions, the markets for compound semiconductors are expanding. Several high profile examples include the increasing number of frequency and power management devices going into cell phones, light emitting diodes, and solar cells The strategy for the work described in this paper is to protect all structures and surfaces with either a spin-on resist or a laminated film during each step in the process flow. These layers will protect the wafer from mechanical and chemical damage, and at the same time protect the fab from contamination by the compound semiconductor.
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Mercado, Alejandro Mercado, Manuel Martínez Facio, Fernando Favila Flores, and Ana García Moya. "Historia Y Evolución De La Industria De Semiconductores Y La Integración De México En El Sector." European Scientific Journal, ESJ 12, no. 18 (June 29, 2016): 65. http://dx.doi.org/10.19044/esj.2016.v12n18p65.

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Semiconductors and their applications, represent one of the technological revolutions with greatest impact on society, generating Industrial changes, new companies, jobs, professional careers and development of new products that have given a twist in the way of life of people around the world. This has produced an industrial war between developed countries, which dispute the first place in terms of production, import and export of semiconductors. The semiconductors industry has given way to agreements and alliances between countries; allowing México to participate on the import, export and the formation of research and development in the industry. The present research, have as an objective to review theoretically the historical evolution of the semiconductor industry and the incorporation of México in the sector.
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Berlin, Leslie R. "Robert Noyce and Fairchild Semiconductor, 1957–1968." Business History Review 75, no. 1 (2001): 63–101. http://dx.doi.org/10.2307/3116557.

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Robert Noyce's career at Fairchild Semiconductor sheds light on several developments that were central to the growth of Silicon Valley and the semiconductor industry: entrepreneurship, technical leadership, and the management of growth in a high-technology company. Noyce served as Fairchild Semiconductors first head of R&D and as its general manager for the six years of the company's most dramatic growth. His technical orientation, personal interest in new technologies, and hands-off management style helped establish a culture at the firm that welcomed innovations in research, process technology, manufacturing, and marketing. As Fairchild Semiconductor grew into a multidivisional mass producer, Noyce's entrepreneurial leadership proved inadequate. Communication breakdowns between divisions, coupled with a series of poor decisions by the parent company, further contributed to the decline of Fairchild Semiconductor.
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Alani, R., R. J. Mitro, and K. Ogura. "Reactive Ion Beam Etching (RIBE) Technique and Instrumentation for SEM Specimen Preparation of Semiconductors." Microscopy and Microanalysis 5, S2 (August 1999): 912–13. http://dx.doi.org/10.1017/s1431927600017888.

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Argon ion beam etching has established itself as an alternative technique to “wet chemical” etching for the preparation of cross sectional SEM specimens of semiconductors [1]. Complementing this technique, we are reporting the results of an iodine RIBE method for improved etching/cleaning capabilities with a measurable increase in etching rates as compared to argon ion beam etching. RIBE systems have been used for decades in the semiconductor research/industry for wafer processing, patterning and surface cleaning. This same technique has also been used for high quality TEM specimen preparation of certain semiconductor materials [2,3]. The beneficial aspects of the iodide RIBE technique for surface etching for a variety of semiconductor structures along with the related instrumentation will be discussed. The semiconductor specimens include traditional ICs and more advanced copper technology devices.The design and construction of the original system used in this work has already been reported [4].
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CHIU, Ching-Ren, Chen-Ling FANG, Seng-Su TSANG, and Yi-Fen CHEN. "PERFORMANCE EVALUATION OF THE SEMICONDUCTOR INDUSTRY BASED ON A METAFRONTIER APPROACH." Technological and Economic Development of Economy 24, no. 3 (May 11, 2018): 825–43. http://dx.doi.org/10.3846/20294913.2016.1218372.

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The semiconductor industry has been regarded as one of the most important industries by Taiwan due to the market share of Taiwan’s semiconductor industry in 2011 ranked second worldwide. However, the European debt crisis triggered a global economic recession in 2011, causing Taiwan’s output of semiconductors in 2010 and 2011 to show negative growth. This paper will mainly explore, from the performance evaluation perspective, the Malmquist productivity index of the Taiwan’s semiconductor industry based on a metafrontier approach. The empirical results show that the European debt crisis in 2011 had an impact on Integrated circuit (IC) design companies and IC manufacturing companies, but that there was no influence on IC packaging and testing companies when measuring static efficiency. From the viewpoint of dynamic productivity performance, the paper finds that the main reason for the negative growth of IC packaging and testing companies and IC design companies came from a backward movement in technical change, but the main reason for the negative growth of IC manufacturing companies derived from a decline in pure technical efficiency.
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Dissertations / Theses on the topic "Semiconductors Semiconductor industry"

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Mardikar, Yogesh Mukesh. "Energy analysis, diagnostics, and conservation in semiconductor manufacturing." Morgantown, W. Va. : [West Virginia University Libraries], 2004. https://etd.wvu.edu/etd/controller.jsp?moduleName=documentdata&jsp%5FetdId=3748.

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Thesis (M.S.)--West Virginia University, 2004.
Title from document title page. Document formatted into pages; contains viii, 152 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 106-108).
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Johnson, William A. "What constitutes national security in the semiconductor industry? a look at the competing views surrounding DoD's support of semiconductuors /." Monterey, California : Naval Postgraduate School, 1990. http://handle.dtic.mil/100.2/ADA241699.

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Thesis (M.S. in Financial Management)--Naval Postgraduate School, December 1990.
Thesis Advisor(s): Gates, William. Second Reader: Terasawa, Katsuaki. "December 1990." Description based on title screen as viewed on March 31, 2010. DTIC Identifier(s): Semiconductor Industry, Budgets, Department Of Defense, Theses. Author(s) subject terms: Semiconductors, National Security, Federal Economic Intervention. Includes bibliographical references (p. 69-71). Also available in print.
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Bode, Christopher Allen. "Run-to-run control of overlay and linewidth in semiconductor manufacturing." Digital version:, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3008281.

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Johnson, William A. "What constitutes national security in the semiconductor industry?: a look at the competing views surrounding DoD's support of semiconductors." Thesis, Monterey, California: Naval Postgraduate School, 1990. http://hdl.handle.net/10945/27608.

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Approved for public release; distribution is unlimited
This thesis examines the current views surrounding federal support of the semiconductor industry, specifically from the Department of Defense. 'National security' is often cited as a reason for federal intervention in the industry. How well founded are the arguments for this support? The current situation in the domestic semiconductor industry is examined, and the industry's explanations for recent changes in market position are identified. Prevailing economic theory is reviewed for possible alternative explanations. Industry views are then examined in light of this economic theory, and appropriate federal actions are recommended. Since these recommendations focus on the macroeconomic forces influencing the balance of trade, they will benefit the semiconductor industry and the economy as a whole.
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Beh, Kok Khim. "Strategic agility in the semiconductor industry in Malaysia and Singapore." Thesis, University of Manchester, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.617792.

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This study aims to explore the agility development from strategic perspectives in the Malaysian and Singaporean semiconductor industries. Firstly, it assesses the needs of agility in the region semiconductor industry. Secondly, it explores informal practices that are associated with agility could bring alternative competitive success; and finally, it argues that the systematic development of agility through formulation, implementation and evaluation could bring competitive advantage to Malaysian and Singaporean semiconductor industries. Using mixed-method research method, this study provided a grounded and exploratory approach, where 101 questionnaires and 4 case companies were used as empirical data which collected in Malaysia and Singapore between Jan 2004 to March 2004. SPSS was used to analyse descriptive and inferential quantitative data from survey questionnaires, while cross-case analysis was carried out to analyse qualitative data in four case companies. Using data integration, this study revealed ten major findings. It concludes that agility is a multi-dimensional approach that encompasses a wide variety of best practices and agility should be built on the foundation of world class manufacturing methods, coupled with an organisation that is technologically and managerially established for rapid and unpredictable change. This study also concludes that informal practices associated with agility need to be embodied in an organisation that attempts to develop agility. Finally, the development of agility does not happen overnight, as it requires a change agent or company-wide transformation to take place in order to develop agility properly. This study identifies the major needs for developing agility strategy in the Malaysian and Singaporean semiconductor industries. A conceptual and systematic framework for developing agility was proposed through strategic formulation, implementation and evaluation that provided valuable evidence to create new strands of agility theory development in other industry within the region, especially those newly industrialised counties. These contributions enable academic researchers to expand the topic into longitude empirical studies and discuss the topic insightfully.
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Vas̆eková, Eva. "Spectroscopic studies of etching gases and microwave diagnostics of plasmas related to the semiconductor industry." n.p, 2006. http://physics.open.ac.uk/~ev295/!MASTER_THESIS.pdf.

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Nazzal, Dima. "Analytical Approach to Estimating AMHS Performance in 300mm Fabs." Diss., Georgia Institute of Technology, 2006. http://hdl.handle.net/1853/11557.

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This thesis proposes a computationally effective analytical approach to automated material handling system (AMHS) performance modeling for a simple closed loop AMHS, such as is typical in supporting a 300mm wafer fab bay. Discrete-event simulation can produce accurate assessments of the production performance, including the contribution by the AMHS. However, the corresponding simulation models are both expensive and time-consuming to construct, and require long execution times to produce statistically valid estimates. These attributes render simulation ineffective as a decision support tool in the early phase of system design, where requirements and configurations are likely to change often. We propose an alternative model that estimates the AMHS performance considering the possibility of vehicle-blocking. A probabilistic model is developed, based on a detailed description of AMHS operations, and the system is analyzed as an extended Markov chain. The model tracks the operations of all the vehicles on the closed-loop considering the possibility of vehicle-blocking. The resulting large-scale model provided reasonably accurate performance estimates; however, it presented some computational challenges. These computational challenges motivated the development of a second model that also analyzes the system as an extended Markov chain but with a much reduced state space because the model tracks the movement of a single vehicle in the system with additional assumptions on vehicle-blocking. Neither model is a conventional Markov Chain because they combine the conventional Markov Chain analysis of the AMHS operations with additional constraints on AMHS stability and vehicle-blocking that are necessary to provide a unique solution to the steady-state behavior of the AMHS. Based on the throughput capacity model, an approach is developed to approximate the expected response time of the AMHS to move requests. The expected response times are important to measure the performance of the AMHS and for estimating the required queue capacity at each pick-up station. The derivation is not straightforward and especially complicated for multi-vehicle systems. The approximation relies on the assumption that the response time is a function of the distribution of the vehicles along the tracks and the expected length of the path from every possible location to the move request location.
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Pang, Tak-yuen Philip. "Topic : an analysis of contemporary semiconductor manufacturing and the role of Asia Pacific Region within /." Hong Kong : University of Hong Kong, 1997. http://sunzi.lib.hku.hk/hkuto/record.jsp?B18835880.

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Barthen, Michael L. "Analysis of Shipley Microposit Remover 1165 and AZ P4620 Photoresist waste disposal for Company XYZ." Online version, 2001. http://www.uwstout.edu/lib/thesis/2001/2001barthenm.pdf.

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Van, Dyke Stephanie A. "An analysis of chlorine trifluoride as an effective substitute for nitrogen triflouride in the chemical vapor deposition reactor cleaning process." Online version, 1998. http://www.uwstout.edu/lib/thesis/1998/1998vandykes.pdf.

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Books on the topic "Semiconductors Semiconductor industry"

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Engineers, Institution of Electrical, ed. A history of the world semiconductor industry. London, U.K: P. Peregrinus on behalf of the Institution of Electrical Engineers, 1990.

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Pan tao tʻi ti ku shih. Tʻai-pei hsien Hsi-chih shih: Hsin hsin wen wen hua shih yeh ku fen yu hsien kung ssu, 1999.

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Semiconductor manufacturing technology. Hackensack, N.J: World Scientific, 2008.

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Yoo, Chue San. Semiconductor manufacturing technology. Hackensack, N.J: World Scientific, 2008.

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Introduction to semiconductor technology. 2nd ed. Bellingham, Wash: SPIE, 2012.

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International, Conference on Semiconductor Electronics (4th 2000 Guoman Port Dickson Resort Malaysia). ICSE2000 : 2000 IEEE International Conference on Semiconductor Electronics: Proceedings : November 13-15, 2000, Guoman Port Dickson Resort, Malaysia. Piscataway, New Jersey: IEEE, 2000.

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IEEE International Conference on Semiconductor Electronics (6th 2004 Kuala Lumpur, Malaysia). ICSE 2004: 2004 IEEE International Conference on Semiconductor Electronics : proceedings : December 7-9, 2004, Kuala Lumbur, Malaysia. Piscataway, NJ: IEEE, 2004.

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Marc, Favreau. Surging markets for silicon alternative materials: IV-IV,sapphire, and SOI materials and devices. Norwalk, CT: Business Communications Co., 1997.

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Sahbudin, Shaari, Majlis Burhanuddin Yeop, IEEE Malaysia Section. Electron Devices Chapter., IEEE Electron Devices Society, Mems Technology, and Universiti Kebangsaan Malaysia, eds. ICSE 2002 : 2002 IEEE International Conference on Semiconductor Electronics: Proceedings : December 19-21, 2002, Gurney Resort Hotel & Residences, Malaysia. Piscataway, New Jersey: IEEE, 2002.

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Malaysia) IEEE International Conference on Semiconductor Electronics (11th 2014 Kuala Lumpur. 2014 IEEE International Conference on Semiconductor Electronics (ICSE 2014): Kuala Lumpur, Malaysia, 27-29 August 2014. Piscataway, NJ: IEEE, 2014.

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Book chapters on the topic "Semiconductors Semiconductor industry"

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Arnold, Erik. "The Semiconductor Industry." In Competition and Technological Change in the Television Industry, 84–90. London: Palgrave Macmillan UK, 1985. http://dx.doi.org/10.1007/978-1-349-07492-1_7.

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Edwards, Phillip R. "Semiconductor device manufacture." In Manufacturing Technology in the Electronics Industry, 91–129. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3130-8_4.

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Li, Simon, and Yue Fu. "Semiconductor Industry and TCAD." In 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics, 1–17. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0481-1_1.

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Oh, Ingyu, Hun-Joon Park, Shigemi Yoneyama, and Hyuk-Rae Kim. "The Semiconductor Industry in Taiwan." In Mad Technology, 103–21. London: Palgrave Macmillan UK, 2005. http://dx.doi.org/10.1057/9780230554924_6.

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Peters, Stuart. "Semiconductors: A Truly Global Industry." In National Systems of Innovation, 68–107. London: Palgrave Macmillan UK, 2006. http://dx.doi.org/10.1057/9780230512603_4.

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Alvaro, M., L. L. Bonilla, and M. Carretero. "Modulated Bloch Waves in Semiconductor Superlattices." In Mathematics in Industry, 749–55. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-23413-7_103.

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Bharamaiah Jeevendra Kumar, Vijay Jain, and Magnus Bergkvist. "CVD Polymers for the Semiconductor Industry." In CVD Polymers, 391–414. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2015. http://dx.doi.org/10.1002/9783527690275.ch18.

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Teker, Kasif. "Micro-Fabrication Processes in Semiconductor Industry." In Micro-Manufacturing, 25–41. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118010570.ch2.

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Brown, Clair, and Greg Linden. "The Evolution of Japan’s Semiconductor Industry." In Have Japanese Firms Changed?, 14–40. London: Palgrave Macmillan UK, 2010. http://dx.doi.org/10.1057/9780230294905_2.

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Quadt, Daniel. "An Application in the Semiconductor Industry." In Lecture Notes in Economics and Mathematical Systems, 195–201. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-17101-7_8.

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Conference papers on the topic "Semiconductors Semiconductor industry"

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Lyeo, Ho-Ki, C. K. Ken Shih, Uttam Ghoshal, and Li Shi. "Thermoelectric Mapping of Nanostructures." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32766.

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There is intense interest to develop nanowires [1] and superlattices [2] that may offer superior thermoelectric figure of merit for efficient energy conversion. Meanwhile, the advance of semiconductor processing techniques has yielded impurity-doped semiconductor nanostructures with a doped region as small as a few nanometers. These include shallow junction Si field-effect transistors, strained Si/SiGe/Ge heterostructures and quantum dots, III-V heterostructures, and doped nanowires and nanotubes. Due to various size confinement effects, these doped semiconductor nanostructures often have unique electrical, optoelectronic, or thermoelectric properties that may lead to a wide range of applications. In contrast to the progress made in synthesizing thermoelectric nanostructures and in fabricating doped semiconductor nanostructures, the ability to quantify thermoelectric property and carrier concentration in comparable length scale has been lagging behind. For example, the 1997 U.S. Roadmap of Semiconductors from the Semiconductor Industry Association (SIA) defines the need for nanometer-scale measurements of carrier concentration profiles [3]. Though progress has been made, currently no technique can satisfy the requirements posted by the SIA roadmap due to the lack of either spatial resolution or accuracy.
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Tennant, Donald. "The evolution of the Cornell NanoScale Facility and synergies with the semiconductor Industry." In Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2019, edited by Eric M. Panning and Martha I. Sanchez. SPIE, 2019. http://dx.doi.org/10.1117/12.2517091.

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Tricard, Marc, Paul R. Dumas, Don Golini, and James T. Mooney. "Prime Silicon and Silicon-on-Insulator (SOI) Wafer Polishing With Magnetorheological Finishing (MRF)." In ASME 2003 International Mechanical Engineering Congress and Exposition. ASMEDC, 2003. http://dx.doi.org/10.1115/imece2003-42149.

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The December 2001 [1, 2] edition of the International Technology Roadmap for Semiconductors [3] (ITRS-2001) identifies several challenges for the manufacturing of silicon and silicon-on-insulator (SOI) wafers. For silicon, edge exclusion, site flatness and nanotopography1 requirements will become extremely challenging. For SOI, requirements for the control of the top silicon layer and its associated uniformity are pushing the limits of metrology. Keeping ± 5% tolerances on thicknesses, gradually decreasing from more than 100nm to less than 20nm for partially depleted devices (let alone from 30 to 3nm for fully depleted devices) is exceeding the capabilities of traditional chemo-mechanical-polishing (CMP) processes [5]. This paper will briefly describe magnetorheological finishing (MRF) and its suitability for prime silicon and SOI wafer polishing. Particular emphasis will be placed on MRF’s ability to improve the global flatness and the total thickness variation (TTV) on prime silicon wafers, and to reduce the nominal thickness of the top silicon layer, while improving thickness uniformity on SOI wafers. The paper will also touch upon the process qualification issues associated with the tight requirements of the semiconductor industry.
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Thompson, Matthew A., Amir Mohajeri, and Amin Mirkouei. "Environmental and Economic Impacts of Nitrogen Trifluoride at an Idaho Semiconductor Facility." In ASME 2020 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/detc2020-22603.

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Abstract Nitrogen Trifluoride (NF3) is an inorganic compound widely used in the electronics industry for manufacturing various products, such as semiconductors, solar panels, and touch screens. However, NF3 emissions that accumulate in the atmosphere have 17,200 times the global warming potentials of CO2 over a 100-year time horizon. The abatement efficiency for NF3 is high, although some amount of NOx is generated. This study aims to provide economic and environmental impact assessments on the use of NF3. Life cycle assessment method is applied for evaluating environmental aspects. Additionally, a real case study for the Idaho semiconductor facility is used to assess the method and demonstrate the application of this study. The results show that slight reductions in abatement efficiency have dramatic impacts on mitigating greenhouse gas (GHG) emissions. Even small unplanned releases of NF3, either through mechanical failure or human error, have significant environmental impacts, and every reasonable effort should be taken to avoid such incidents. The results also indicate that the cost of abatement is the primary driver of economic impact. It is found that the considerable distance from the chemical plant in Arizona to the point of use in Idaho contributed a minor portion of GHGs associated with the use of NF3. It is also found that contaminants (e.g., SF6 and CF4) within the cylinder potentially have more substantial GHG impacts than the actual NF3, owing in part to the relative ease with which NF3 is destroyed through abatement.
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Alani, R., R. J. Mitro, and W. Hauffe. "Recent Advances in Broad Ion Beam Based Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors." In ISTFA 1999. ASM International, 1999. http://dx.doi.org/10.31399/asm.cp.istfa1999p0439.

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Abstract The semiconductor industry routinely prepares crosssectional SEM specimens using several traditional techniques. Included in these are cleaving, mechanical polishing, wet chemical etching and focused ion beam (FIB) milling. This presentation deals with a new alternate method for preparation of SEM semiconductor specimens based upon a dedicated broad ion beam instrument. Offered initially as an alternative to wet chemical etching, the instrument was designed to etch and coat SEM and metallographic specimens in one vacuum chamber using inert gas (Ar) ion beams. The system has recently undergone further enhancement by introducing iodine Reactive Ion Beam Etching (RIBE) producing much improved etching/cleaning capabilities compared with inert gas ion beam etching. Further results indicate Ar broad ion beam etching can offer a rapid, simple, more affordable alternative (to FIB machines) for precision cross sections and for “slope cutting,” a technique producing large cross-sections within a short time frame. The overall effectiveness of this system for iodine RIBE etching, for precision cross sectioning and “slope cutting” will be shown for a number of traditional and advanced semiconductor devices.
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Erturk, Hakan, and John R. Howell. "Complete Modeling of a Light-Pipe Radiation Thermometer in a Rapid Thermal Processing System." In ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-67341.

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Light-pipe radiation thermometers are predominantly used to monitor wafer temperature during rapid thermal processing (RTP) of semiconductors. The processes used in fabrication of semiconductor devices during rapid thermal processing are extremely temperature sensitive and the errors associated with light-pipe measurements are great concerns across the industry. Modeling of the light-pipes has helped in understanding the signal transport process and errors associated with the light pipe measurements. However, due to the smaller size of the light-pipe sensor area with respect to the total system area, full scale modeling of such a system including the light pipe thermometer has not been possible due to the computational demand. In this paper, the reverse Monte Carlo method is used to model the signal transport through a light-pipe thermometer used in a RTP system. The Monte Carlo model considers the spectral and angular dependent optical properties of the chamber and quartz materials. The reverse Monte Carlo model is applied to the full scale instrumented system with characteristics of a RTP system with a quartz light pipe probe and the results are compared against previously published measurements from the same system.
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Morgan, Adam, Leila Choobineh, David Fresne, and Douglas C. Hopkins. "Numerical and Experimental Determination of Temperature Distribution in 3D Stacked Power Devices." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74222.

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During the last few decades, the microelectronics packaging industry has moved into the 2.5D to 3D space for increased density, functionality, and speed. Similar concepts and ideas for developing 2.5D to 3D power electronics packaging are desired to achieve even greater efficiency and power density over conventional power electronics packaging methods. Wide-band gap (WBG) semiconductors, such as SiC and GaN, have accelerated the ability to shrink the volumetric size and weight of these power conversion systems, and thus improve overall power density metrics, due to their inherent high frequency, high temperature, and high voltage capabilities. WBG power semiconductor devices, with these attributes, thus make themselves excellent candidates for more aggressive packaging, compared to Si-derived packaging, in order to not only take full advantage of the WBG device ratings, but also to achieve high power densities of the overall power conversion systems. Already different/multiple power semiconductor devices are being combined by processing them together on the same die to boost electrical performance and increase power density. It can be assumed that further levels of integration will be sought after for the next levels of packaging to enable similar gains, especially with the advent of double side solderable die. The 3D stacking of die, components, and substrates creates the question of how well will each of these perform in close proximity to each other. This work focuses on the numerical simulation and experimental measurements to predict the temperature distribution of power converters built in a stacked fashion. Thermal models of a stacked power electronic switching unit — a silicon controlled rectifier and anti-parallel diode — are modeled under the assumption of equally sized die. Temperature field maps are generated for 20W to 250W of power dissipations across the power semiconductor die. Thermal models are then compared with matching experimental setups to observe the effect of switching unit placement attached to a given substrate on the die junction temperatures for various scenarios of thermal crosstalk. Results from this work are expected to aid in the development 2.5D to 3D power electronic packaging by predicting thermal performance of stacked, ultra-dense, WBG device -based packages.
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Kacker, Karan, George Lo, and Suresh K. Sitaraman. "Wafer-Level, Compliant, Off-Chip Interconnects for Next-Generation Low-K Dielectric/Cu IC’s." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-16014.

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Demand for off-chip bandwidth has continued to increase. It is projected by the Semiconductor Industry Association in their International Technology Roadmap for Semiconductors (ITRS) that by the year 2015, the chip-to-substrate area-array input-output interconnects will require a pitch of 70 μm. Compliant off-chip interconnects show great potential to address these needs. G-Helix is a lithography-based electroplated compliant interconnect that can be fabricated at the wafer level. G-Helix interconnects exhibit excellent compliance in all three orthogonal directions, and can accommodate the CTE mismatch between the silicon die and the organic substrate without requiring an underfill. Also, these compliant interconnect are less likely to crack or delaminate the low-K dielectric material in current and future ICs. The interconnects are also potentially cost effective as they can be fabricated using conventional wafer fabrication infrastructure. In this paper we present an integrative approach which uses interconnects with varying compliance and thus varying electrical preformance from the center to the edge of the die. Using such a varying geometry from the center to the edge of the die, the system performance can be tailored by balancing electrical requirements against thermo-mechanical reliability concerns. We also discuss the reliability assessment results of helix interconnects assembled on an organic substrate. Results from mechanical characterization experiments are also presented.
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Budri, Thanas, and Jeffrey Klatt. "Characterization of Doped Oxide Films PSG/BPSG/FSG via DSIMS in Order to Eliminate Nonzero Kilometer Failures from Semiconductors Used in Automotive Industry : Topic/category: Yield Enhancment/Advanced Metrology." In 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2020. http://dx.doi.org/10.1109/asmc49169.2020.9185391.

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Meadows, Chris J. "Manufacturing compound semiconductors." In SPIE Photonex Industry Talks, edited by John R. Lincoln. SPIE, 2020. http://dx.doi.org/10.1117/12.2584836.

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Reports on the topic "Semiconductors Semiconductor industry"

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Khan, Saif M. U.S. Semiconductor Exports to China: Current Policies and Trends. Center for Security and Emerging Technology, October 2020. http://dx.doi.org/10.51593/20200039.

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The United States has long used export controls to prevent the proliferation of advanced semiconductors and the inputs necessary to produce them. With Beijing building up its own chipmaking industry, the United States has begun tightening restrictions on exports of semiconductor manufacturing equipment to China. This brief provides an overview of U.S. semiconductor export control policies and analyzes the impacts of those policies on U.S.-China trade.
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Li, Ya-Shian, and Barbara Goldstein. Semiconductor industry IT needs:. Gaithersburg, MD: National Institute of Standards and Technology, 2003. http://dx.doi.org/10.6028/nist.ir.7003.

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Hunt, Will, and Remco Zwetsloot. The Chipmakers: U.S. Strengths and Priorities for the High-End Semiconductor Workforce. Center for Security and Emerging Technology, September 2020. http://dx.doi.org/10.51593/20190035.

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Technical leadership in the semiconductor industry has been a cornerstone of U.S. military and economic power for decades, but continued competitiveness is not guaranteed. This issue brief exploring the composition of the workforce bolstering U.S. leadership in the semiconductor industry concludes that immigration restrictions are directly at odds with U.S. efforts to secure its supply chains.
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Scace, Robert I. Metrology for the semiconductor industry. Gaithersburg, MD: National Institute of Standards and Technology, 1991. http://dx.doi.org/10.6028/nist.ir.4653.

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Irwin, Douglas. Trade Politics and the Semiconductor Industry. Cambridge, MA: National Bureau of Economic Research, May 1994. http://dx.doi.org/10.3386/w4745.

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Bechtold, Ronald. Baseline Assessment of the Semiconductor Industry. Fort Belvoir, VA: Defense Technical Information Center, April 1992. http://dx.doi.org/10.21236/ada262144.

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Bergin, William, Leroy Bryant, Emil Crticec, Gary Galloway, and William Grandrath. Electronics Industry Study Report: Semiconductors as Proxy. Fort Belvoir, VA: Defense Technical Information Center, January 2002. http://dx.doi.org/10.21236/ada425459.

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Bonheim, Michael, Gregory Burns, George Hoffer, Diana Keys, Valentyn Kovalenko, Alan Maitland, William Marks, Andrew Marotta, Neal McMahon, and Stanley Specht. Electronics Industry Study Report: Semiconductors and Defense Electronics. Fort Belvoir, VA: Defense Technical Information Center, January 2003. http://dx.doi.org/10.21236/ada524792.

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Bulko, J. B. Production of High Value Fluorine Gases for the Semiconductor Industry. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/824744.

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Berg, Robert F., David S. Green, and George E. Mattingly. Workshop on mass flow measurement and control for the semiconductor industry. Gaithersburg, MD: National Institute of Standards and Technology, 2001. http://dx.doi.org/10.6028/nist.sp.400-101.

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